CN1157783C - 壳式热沉及带壳式热沉的存储器模块 - Google Patents

壳式热沉及带壳式热沉的存储器模块 Download PDF

Info

Publication number
CN1157783C
CN1157783C CNB991090365A CN99109036A CN1157783C CN 1157783 C CN1157783 C CN 1157783C CN B991090365 A CNB991090365 A CN B991090365A CN 99109036 A CN99109036 A CN 99109036A CN 1157783 C CN1157783 C CN 1157783C
Authority
CN
China
Prior art keywords
heat sink
type
shell
memory module
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB991090365A
Other languages
English (en)
Other versions
CN1239327A (zh
Inventor
ʷ
河村政史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ps4 Russport Co ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1239327A publication Critical patent/CN1239327A/zh
Application granted granted Critical
Publication of CN1157783C publication Critical patent/CN1157783C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/107Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094Thermal management, e.g. cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

具有U形剖面的“壳式热沉”5以下面的方式装配到存储器模块10上:存储器模块10插在“壳式热沉”5的U形深槽内,安装在印刷电路板1的每个表面上的所有的封装存储器IC3和其它的部件由“壳式热沉”5覆盖,硅滑脂6填充到“壳式热沉”5和封装的存储器之间。每个封装的存储器中产生的热通过硅滑脂6传导到“壳式热沉”5,热从“壳式热沉”5的表面散发出。此外,安装在印刷电路板1上的所有的部件都由“壳式热沉”5覆盖。

Description

壳式热沉及带壳式热沉的存储器模块
技术领域
本发明涉及构形为装配到存储器模块的壳式热沉,和装配有壳式热沉的存储器模块,具体地涉及构形为装配到由主要安装到印刷电路板上的多个DRAM组成的存储器模块的壳式热沉,和装配有壳式热沉的存储器模块。
背景技术
近来,如DRAM(动态随机存储存储器)等的半导体存储器中工作速度和存储容量正快速地增加。随着半导体存储器集成密度的增加,半导体存储器IC(集成电路)产生的热量也相应地增加。此外,需要容纳包括半导体存储器的微电子部件的模块减小尺寸。另一方面,有时存储器模块包括IC等,用来补偿分立的DRAM增加工作速度造成的信号延时。由此,除了半导体存储器IC以外,许多IC和芯片型电路部件安装在印刷电路板上,由此安装在存储器模块中的部件数量趋于增加。
现在,参考图1A和1B介绍现有技术的存储器模块,图1A和1B为现有技术的存储器模块的一个典型例子的平面图和侧视图。如图1A和1B所示,存储器模块一般由参考数字10表示,包括许多封装的存储器IC 3和多个片状电容器2安装在印刷电路板1的每一面上。印刷电路板1有沿印刷电路板1每一面的长边边缘设置的接触焊盘4的阵列,用于与适当匹配的插槽电连接。
从图1A和1B可以看出,半导体存储器IC 3和片状电容器2以无外壳的形式安装在印刷电路板1的每一面上,存储器模块10以所述无外壳的形式插入到如个人计算机的系统插槽内。因此,存储器IC 3内产生的热量仅由存储器IC 3的表面散发出。
在如上所述的现有技术的存储器模块中,由于存储器IC表面的散热是存储器IC内产生热量的唯一散热方式,因此不能得到满意的散热效率。此外,由于散热效率自身受DRAM封装形状的影响,遇到由于集成度增加引起的DRAM热量增加导致存储器性能下降的新问题。
此外,由于现有技术的存储器模块以安装在模块上的所有元件以无外壳形式的条件下装配,由于运输过程中机械冲击,位于存储器模块的印刷电路板边缘区域处如电容器和电阻器等的芯片型元件断裂或丢失的可能性很大。此外,随着安装在存储器模块的印刷电路板上IC性能的增加,封装的IC的管脚间距变得很窄,由此发生了如由外部原因造成的IC管脚之间短路的另一新问题。
此外,通常通过将部件放置在印制在印刷电路板上的焊膏上,并将印刷电路板放入到回流炉内,以便部件焊接在印刷电路板上,由此将包括存储器IC的部件常规地安装在印刷电路板上。在所述工艺中,印刷电路板经常翘曲,如果部件安装在翘曲的印刷电路板上,当存储器模块插入到如个人计算机的系统插槽内时,应力作用在印刷电路板上,导致部件从印刷电路板上剥离。
日本专利申请审查前公开No.JP-A-07-202120(可以看到JP-A-07-202120的英文摘要,将英文摘要的内容引入到本申请中作为参考)提出通过将封装的存储器IC粘接到散热基片的表面,并用树脂覆盖封装的存储器IC和散热基片的一个表面构造成一种能有效地散发存储器IC产生的热的高散热存储器。
所述现有技术意在提高分立存储器IC的散热效率,由此由安装在印刷电路板上具有高散热效率的多个存储器IC组成的存储器模块,总体上具有高散热效率。然而,分立存储器IC的结构复杂并且昂贵,因此,存储器模块相应地变得昂贵。此外,所述措施不能解决印刷电路板翘曲的问题。
发明内容
因此,本发明的一个目的是提供一种能够克服以上提到的现有技术问题的构形为装配到存储器模块的壳式热沉,和装配有壳式热沉的存储器模块。
本发明的另一个目的是提供一种构形装配到存储器模块的壳式热沉,能有效地散发安装在印刷电路板上如DRAM等的封装半导体存储器产生的热量,并能保护安装在存储器模块的印刷电路板上的部件不受机械冲击,也能鉴别具有封装的半导体存储器和其它部件安装其上的印刷电路板的翘曲程度。
本发明的另一目的是提供一种装配有以上提到的壳式热沉的存储器模块。
根据本发明通过以下方式可以实现本发明的以上和其它目的:提供了一种壳式热沉,用于装配到由安装在印刷电路板上的多个封装的存储器集成电路组成的存储器模块上,所述壳式热沉具有U形剖面的U形槽以及形成于所述U型槽内表面上的导热材料。
在一个实施例中,导热材料是高导热构件,壳式热沉由具有夹紧功能的弹性材料形成,以便存储器模块由壳式热沉通过高导热构件机械地固定。优选壳式热沉在它的外表面上具有多个凸起,以增加外表面面积。
根据本发明的另一方面,提供一种带壳式热沉的存储器模块,它包括:壳式热沉,其具有U形剖面的U形槽以及形成于所述U型槽内表面上的导热材料;存储器模块,由安装在印刷电路板上的多个封装的存储器集成电路组成,所述封装的存储器集成电路插在所述壳式热沉的U形槽的导热材料之间并与所述导热材料接触;接触焊盘,暴露在所述U型壳式热沉的外面。
在一个实施例中,导热材料是高导热构件,壳式热沉由具有夹紧功能的弹性材料形成,以便存储器模块由壳式热沉通过高导热构件机械地固定。导热材料优选为具有电绝缘性质的高导热橡胶,壳式热沉在它的外表面上具有多个凸起,以增加外表面面积。
壳式热沉可以从存储器模块上拆卸下。在另一实施例中,导热材料是硅滑脂。
更优选地,壳式热沉的长度和U形槽的深度足以覆盖安装在印刷电路板上的所有封装的存储器集成电路。
从下面参考附图对本发明优选实施例的介绍中,本发明的以上和其它目的、特点和优点将变得很显然。
附图说明
图1A和1B分别为现有技术的存储器模块的一个典型例子的平面图和侧视图;
图2A和2B分别为根据本发明装配有壳式热沉的存储器模块的第一实施例的平面图和侧视图;
图2C为沿图2B中的线A-A截取的局部剖面图;
图3A和3B分别为根据本发明装配有壳式热沉的存储器模块的第二实施例的平面图和侧视图;以及
图3C为沿图3B中的线B-B截取的局部剖面图。
具体实施方式
参考图2A和2B,其分别显示出根据本发明装配有壳式热沉的存储器模块的第一实施例的平面图和侧视图。图2C为沿图2B中的线B-B截取的局部剖面图。在图2A、2B和2C中,和图1A和1B所示类似的元件用相同的参考标号表示,为简明省略了介绍。
从图1A和1B与图2A和2B之间的对比可以看出,第一实施例的特征在于根据本发明常规的存储器模块10(由安装在印刷电路板1上的多个存储器IC 3和多个片状电容器2组成,多个接触焊盘4沿印刷电路板1的一侧边缘设置)装配有“壳式热沉”5。
所述“壳式热沉”5有图2B所示的U形剖面。即,“壳式热沉”5有一个顶板5A和从顶板5A的相对纵向侧垂直并向下延伸的一对侧板5B和5C,由此限定出U形深凹槽。侧板5B和5C的相对内表面之间的间距S大于存储器模块10的厚度T。从侧板5B和5C的上端到下端,所述间距S固定不变。“壳式热沉”5的长度L和U形深凹槽的深度D(从顶板5A的内表面到一对侧板5B和5C的空(free)边之间的距离)足以覆盖安装在印刷电路板1上的所有封装存储器IC和其它的部件,但将接触焊盘4固定在暴露的状态。在显示的实施例中,“壳式热沉”5的长度L大于从最左边封装的存储器IC的左边到最右边封装的存储器IC的右边的距离,如图2A所示,但短于印刷电路板1的长度,深度D稍长于从如图2A所示印刷电路板1上端到封装的存储器IC下端的距离。
此外,如图2A和2B所示,至少“壳式热沉”5的一对侧板5B和5C具有多个形成在它的外表面上的凸起或小突块5D,以便增加表面面积,由此提高散热效率。但是,不仅一对侧板5B和5C,而且顶板5A在它的外表面上也有多个凸起或小突块5D。
由此,“壳式热沉”5以下面的方式固定到存储器模块10上:存储器模块10插在一对侧板5B和5C之间的U形深槽内,安装在印刷电路板1的每个表面上的所有的封装存储器IC 3和其它的部件由侧板5B和5C覆盖,但接触焊盘4没有被侧板5B和5C覆盖。在这种情况下,如图2C所示,具有良好导热性和电绝缘性的硅滑脂6填充到每个侧板5B和5C的内表面和每个封装的存储器IC 3之间的空间内,由此每个封装的存储器IC 3中产生的热通过硅滑脂6传导到对应的侧板5B和5C。由于硅滑脂6存在于“壳式热沉”5的侧板5B和5C和每个封装的存储器IC 3之间,所以“壳式热沉”5可以从存储器模块10上拆卸下。
如上所述,在第一实施例中,“壳式热沉”5装配在常规的存储器模块10上,硅滑脂6填充在“壳式热沉”5和封装的存储器IC 3之间。采用这种布局,每个封装的存储器IC 3中产生的热通过硅滑脂6传导到“壳式热沉”5,热从“壳式热沉”5的表面散发出。由于“壳式热沉”5的外表面面积显著大于安装在印刷电路板1上的所有封装的存储器IC3的各个外表面面积的总合,因此存储器IC 3中产生的热可以更有效地从“壳式热沉”5上散发,比图1A和1B所示的常规存储器模块10散热更有效。这里,即使“壳式热沉”5的外表面没有凸起5D,如果“壳式热沉”5的外表面面积显著大于安装在印刷电路板1上的所有封装存储器IC 3的各个外表面面积的总合,那么没有必要在“壳式热沉”5的外表面上设置凸起5D。然而,最好是在“壳式热沉”5的外表面上设置凸起5D,这是因为可以进一步地增加“壳式热沉”5的外表面面积。
此外,由于安装在印刷电路板1上的所有的封装存储器IC 3和其它的部件都由“壳式热沉”5覆盖,位于印刷电路板1周边区域如电容器和电阻等的芯片型部件可以免受机械冲击,因此,不存在位于存储器模块的印刷电路板周边区域的芯片型部件在运输过程中断裂或丢失的可能性。
此外,如上所述,当包括存储器IC的部件通过融化印制在印刷电路板上的焊膏安装在印刷电路板上时,印刷电路板经常翘曲。如果印刷电路板的翘曲超过某个限度时,“壳式热沉”5不能装配在存储器模块10上。因此,可以根据“壳式热沉”5是否能装配在存储器模块10上来鉴别印刷电路板的翘曲程度。因此,可以防止将翘曲超过限度的印刷电路板插入到如计算机的系统插槽内引起部件从印刷电路板上脱离。
在所述第一实施例中,如果“壳式热沉”5有良好的导热性和足以保护安装在印刷电路板1上的部件2和3的机械强度免受机械冲击就足够了。因此,“壳式热沉”5可以由金属或陶瓷形成。此外,硅滑脂6可以用粘性系数与硅滑脂相当,并且具有热稳定性、电绝缘性和良好导热性的任何材料代替。此外,如果将“壳式热沉”5装配到存储器模块10上之后,不必将“壳式热沉”5从存储器模块10上拆卸下,那么硅滑脂6可以用具有热稳定性、电绝缘性和良好导热性的紧密接触的粘合剂代替。
参考图3A和3B,分别显示出根据本发明装配有壳式热沉的存储器模块的第二实施例的平面图和侧视图。图3C为沿图3B中的线B-B截取的局部剖面图。在图3A、3B和3C中,和图2A、2B和2C所示类似的元件用相同的参考标号表示,为简化省略了介绍。
从图3A、3B和3C与图2A、2B和2C之间的对比可以看出,第二实施例与第一实施例的不同之处在于第一实施例的“壳式热沉”5和硅滑脂6用分别具有电绝缘性的夹型“壳式热沉”7和高导热橡胶8代替。
夹型“壳式热沉”7由例如具有弹性的金属或陶瓷等弹性材料形成,并具有变形的U形剖面,如图3B所示。具体地,夹型“壳式热沉”7有一个顶板7A和从顶板7A相对的纵向侧向下延伸的一对侧板7B和7C,首先稍微向内延伸距顶板7A一段短距离,然后垂直地延伸,由此限定出之间变形的U形深凹槽,在一对侧板7B和7C之间具有夹紧功能。
此外,类似于第一实施例,至少“壳式热沉”7的一对侧板7B和7C具有多个形成在它的外表面上的凸起或小突块7D,以便增加表面面积,由此提高散热效率。但是,不仅是一对侧板7B和7C,而且顶板7A在它的外表面上也有多个凸起或小突块7D。
类似于第一实施例,侧板7B和7C的相对内表面之间的间距S大于存储器模块10的厚度T。“壳式热沉”7的长度L和U形深凹槽的深度D(从顶板7A的内表面到一对侧板7B和7C的空边之间的距离)足以盖住安装在印刷电路板1上的所有封装的存储器IC和其它的部件,但将接触焊盘4固定在暴露的状态。此外,每个侧板7B和7C的垂直部分的尺寸足以覆盖安装在印刷电路板1上的所有封装的存储器IC和其它的部件,如图3B所示。
由此,夹型“壳式热沉”7以下面的方式固定到存储器模块10上:存储器模块10插在一对侧板7B和7C之间的U形深槽内,安装在印刷电路板1的每个表面上的所有的封装存储器IC 3和其它的部件2由侧板7B和7C覆盖,并由插在每个侧板7B和7C的内表面和每个封装的存储器IC 3之间的高导热橡胶8固定在侧板7B和7C之间。但接触焊盘4没有被侧板7B和7C覆盖。
在第二实施例中,由于“壳式热沉”5由插在侧板7B和7C和封装的存储器IC 3之间高导热橡胶8的弹性材料形成的夹型“壳式热沉”7代替,与第一实施例相比,“壳式热沉”7和封装的存储器IC 3之间的结合可以增强。因此,在每个封装的存储器IC 3中产生的热可以更有效地通过高导热橡胶8传导到“壳式热沉”7,从而热量由“壳式热沉”7的表面散发出。
类似于第一实施例,由于“壳式热沉”7的外表面面积显著大于安装在印刷电路板1上的所有封装存储器IC 3的各个外表面面积的总合,因此存储器IC 3中产生的热可以更有效地从“壳式热沉”7上散发,比图1A和1B所示的常规存储器模块10散热更有效。此外,由于与第一实施例相比,“壳式热沉”7和封装的存储器IC 3之间的结合可以增强,在封装的存储器IC 3中产生的热可以比第一实施例的“壳式热沉”5更有效地散发出。
此外,由于夹型“壳式热沉”7用夹型“壳式热沉”7的弹性施加的适当的外力固定存储器模块10,与使用硅滑脂6的第一实施例相比,“壳式热沉”从存储器模块10上脱落的可能性非常小。
此外,类似于第一实施例,由于安装在印刷电路板1的每个表面上的所有的封装存储器IC 3和其它的部件2都由夹型“壳式热沉”7覆盖,位于印刷电路板1周边区域如电容器和电阻等的芯片型部件可以免受机械冲击,因此,不存在位于存储器模块的印刷电路板周边区域的芯片型部件在运输过程中断裂或丢失的可能性。
此外,如上所述,当包括存储器IC的部件通过融化印制在印刷电路板上的焊膏安装在印刷电路板上,印刷电路板经常翘曲。如果印刷电路板的翘曲超过某个限度时,夹型“壳式热沉”7不能安装在存储器模块10上。因此,与第一实施例类似,可以根据“壳式热沉”7是否能安装在存储器模块10上来鉴别印刷电路板的翘曲程度。因此,可以防止将翘曲超过限度的印刷电路板插入到如个人计算机的系统插槽内引起的部件从印刷电路板上剥离。
从以上可以看出,根据本发明装配有壳式热沉的存储器模块具有以下优点:
第一个优点是安装在存储器模块中的封装存储器IC,优选其它的部件中产生的热可以有效地散发。原因是由于如封装的存储器IC等的热产生体通过硅滑脂或高导热橡胶以良好的导热关系连接到“壳式热沉”,热产生体中产生的热可以有效地传导到“壳式热沉”,进一步有效地从具有大表面积的“壳式热沉”表面上散发出。
第二个优点是保护安装在印刷电路板上的部件免受机械冲击,由于安装在印刷电路板上的所有部件都由机械强度足以保护安装在印刷电路板上的部件免受机械冲击的“壳式热沉”覆盖,由此从外部施加的力并没有施加到安装在印刷电路板上的部件上。
第三个优点是可以鉴别印刷电路板的翘曲程度是否超出了允许的限度。由于如果印刷电路板的翘曲(当包括存储器IC的部件安装在印刷电路板上时由于热和其它原因造成)超过某个限度时,“壳式热沉”不能装配到存储器模块上。此外,即使“壳式热沉”装配到轻微翘曲的存储模块上,通过对装配有“壳式热沉”的存储器模块进行电测试,可以知道安装到印刷电路板上的部件是否从印刷电路板上剥离。因此,可以防止有缺陷的存储器模块供应到市场。
由此参考具体的实施例显示和介绍了本发明。然而,应该注意本发明并不局限于示出结构的细节,变型和修改都在附带的权利要求书的范围内。

Claims (10)

1.一种壳式热沉,装配到由安装在印刷电路板上的多个封装的存储器集成电路组成的存储器模块上,所述壳式热沉具有U形剖面的U形槽以及形成于所述U型槽内表面上的导热材料。
2.根据权利要求1的壳式热沉,其中所述导热材料是高导热构件,壳式热沉由具有夹紧功能的弹性材料形成,以便存储器模块由壳式热沉通过高导热构件机械地固定。
3.根据权利要求1或2的壳式热沉,其中所述壳式热沉在它的外表面上具有多个凸起,以增加外表面面积。
4.一种带壳式热沉的存储器模块,包括:
壳式热沉,其具有U形剖面的U形槽以及形成于所述U型槽内表面上的导热材料;
存储器模块,由安装在印刷电路板上的多个封装的存储器集成电路组成,所述封装的存储器集成电路插在所述壳式热沉的U形槽的导热材料之间并与所述导热材料接触;
接触焊盘,暴露在所述U型壳式热沉的外面。
5.根据权利要求4的存储器模块,其中所述导热材料是高导热构件,壳式热沉由具有夹紧功能的弹性材料形成,以便存储器模块由壳式热沉通过所述高导热构件机械地固定。
6.根据权利要求4的存储器模块,其中所述导热材料为硅滑脂。
7.根据权利要求4,5或6的存储器模块,其中所述壳式热沉在它的外表面上具有多个凸起,以增加外表面面积。
8.根据权利要求4,5或6的存储器模块,其中所述壳式热沉可以从存储器模块上拆卸下。
9.根据权利要求4或5的存储器模块,其中所述导热材料优选为具有电绝缘性质的高导热橡胶。
10.根据权利要求4的存储器模块,其中所述壳式热沉的长度和所述U形凹槽的深度足以覆盖安装在印刷电路板上的所有所述封装的存储器集成电路。
CNB991090365A 1998-06-12 1999-06-14 壳式热沉及带壳式热沉的存储器模块 Expired - Fee Related CN1157783C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP164720/1998 1998-06-12
JP10164720A JP3109479B2 (ja) 1998-06-12 1998-06-12 放熱体及び放熱体を装着したメモリモジュール

Publications (2)

Publication Number Publication Date
CN1239327A CN1239327A (zh) 1999-12-22
CN1157783C true CN1157783C (zh) 2004-07-14

Family

ID=15798620

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB991090365A Expired - Fee Related CN1157783C (zh) 1998-06-12 1999-06-14 壳式热沉及带壳式热沉的存储器模块

Country Status (6)

Country Link
US (1) US6424532B2 (zh)
JP (1) JP3109479B2 (zh)
KR (1) KR100297226B1 (zh)
CN (1) CN1157783C (zh)
DE (1) DE19928075B4 (zh)
TW (1) TW405248B (zh)

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3831159B2 (ja) * 1999-10-18 2006-10-11 日本圧着端子製造株式会社 コネクタ付電子モジュール
US7301776B1 (en) * 2004-11-16 2007-11-27 Super Talent Electronics, Inc. Light-weight flash hard drive with plastic frame
KR100370270B1 (ko) * 2000-01-19 2003-01-30 원지금속 주식회사 컴퓨터 램용 히터싱크와 그 제조방법
DE10038161A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Kühlvorrichtung für elektronische Bauteile und Verfahren zur Herstellung der Kühlvorrichtung
KR100389920B1 (ko) * 2000-12-12 2003-07-04 삼성전자주식회사 열팽창에 의한 신뢰성 저하를 개선할 수 있는 반도체 모듈
DE10134983A1 (de) * 2001-07-18 2002-09-19 Infineon Technologies Ag Anordnung zur Kühlung integrierter Halbleiterbausteine
DE10343525B4 (de) 2002-09-27 2011-06-16 Qimonda Ag Verfahren zum Betreiben von Halbleiterbausteinen, Steuervorrichtung für Halbleiterbausteine und Anordnung zum Betreiben von Speicherbausteinen
US6711021B1 (en) * 2003-01-15 2004-03-23 Hewlett-Packard Development Company, L.P. Systems and methods that use at least one component to remove the heat generated by at least one other component
US6967843B2 (en) * 2003-02-11 2005-11-22 Hewlett-Packard Development Company, L.P. System and method for dissipating heat from an electronic board
WO2004100262A1 (ja) * 2003-05-07 2004-11-18 Fujitsu Limited 冷却部品、基板及び電子機器
US20050014308A1 (en) * 2003-07-17 2005-01-20 Yuan-Ping Tseng Manufacturing process of memory module with direct die-attachment
JP3845408B2 (ja) * 2003-10-06 2006-11-15 エルピーダメモリ株式会社 メモリモジュール放熱装置
JP2005150454A (ja) * 2003-11-17 2005-06-09 Yaskawa Electric Corp 電力変換装置の冷却構造
US7023700B2 (en) * 2003-12-24 2006-04-04 Super Talent Electronics, Inc. Heat sink riveted to memory module with upper slots and open bottom edge for air flow
DE102004009055B4 (de) * 2004-02-23 2006-01-26 Infineon Technologies Ag Kühlanordnung für Geräte mit Leistungshalbleitern und Verfahren zum Kühlen derartiger Geräte
KR100558065B1 (ko) * 2004-03-15 2006-03-10 삼성전자주식회사 방열체가 구비된 반도체 모듈
KR100564620B1 (ko) 2004-03-31 2006-03-29 삼성전자주식회사 열방출 특성을 개선한 메모리 모듈, 메모리 모듈용 소켓및 이를 이용한 메모리 모듈용 소켓 사용방법
US7254036B2 (en) * 2004-04-09 2007-08-07 Netlist, Inc. High density memory module using stacked printed circuit boards
US7079396B2 (en) 2004-06-14 2006-07-18 Sun Microsystems, Inc. Memory module cooling
EP1626410B1 (en) * 2004-08-13 2007-05-09 Wan-Chien Chang Heat radiating and protective device for a memory module
KR20060018453A (ko) * 2004-08-24 2006-03-02 삼성전자주식회사 히트 싱크를 갖는 반도체 소자
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
US7443023B2 (en) * 2004-09-03 2008-10-28 Entorian Technologies, Lp High capacity thin module system
US7768785B2 (en) * 2004-09-29 2010-08-03 Super Talent Electronics, Inc. Memory module assembly including heat-sink plates with heat-exchange fins attached to integrated circuits by adhesive
US7609523B1 (en) 2004-09-29 2009-10-27 Super Talent Electronics, Inc. Memory module assembly including heat sink attached to integrated circuits by adhesive and clips
US7215551B2 (en) * 2004-09-29 2007-05-08 Super Talent Electronics, Inc. Memory module assembly including heat sink attached to integrated circuits by adhesive
JP2006140192A (ja) * 2004-11-10 2006-06-01 Matsushita Electric Ind Co Ltd 電子回路装置
US7521788B2 (en) * 2004-11-15 2009-04-21 Samsung Electronics Co., Ltd. Semiconductor module with conductive element between chip packages
JP2006148105A (ja) * 2004-11-15 2006-06-08 Samsung Electronics Co Ltd 半導体モジュール及びその製造方法
KR100659071B1 (ko) * 2004-11-19 2006-12-21 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
US7310036B2 (en) * 2005-01-10 2007-12-18 International Business Machines Corporation Heat sink for integrated circuit devices
DE102006005955B4 (de) * 2005-02-02 2007-01-25 Samsung Electronics Co., Ltd., Suwon Inline-Speichermodul
KR100702016B1 (ko) 2005-02-02 2007-03-30 삼성전자주식회사 양면 실장 메모리 모듈의 인쇄 회로 기판 및 이를이용하는 양면 실장 메모리 모듈
US7248351B2 (en) * 2005-02-25 2007-07-24 Infineon Technologies Ag Optimizing light path uniformity in inspection systems
US7289331B2 (en) * 2005-03-30 2007-10-30 International Business Machines Corporation Interposable heat sink for adjacent memory modules
JP2006287080A (ja) * 2005-04-04 2006-10-19 Hitachi Ltd メモリモジュール
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
GB2441726B (en) 2005-06-24 2010-08-11 Metaram Inc An integrated memory core and memory interface circuit
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US7609567B2 (en) * 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
KR100693920B1 (ko) 2005-07-07 2007-03-12 삼성전자주식회사 히트 스프레더, 이를 갖는 반도체 패키지 모듈 및 메모리모듈
US7442050B1 (en) 2005-08-29 2008-10-28 Netlist, Inc. Circuit card with flexible connection for memory module with heat spreader
JP5242397B2 (ja) 2005-09-02 2013-07-24 メタラム インコーポレイテッド Dramをスタックする方法及び装置
US20070070607A1 (en) * 2005-09-23 2007-03-29 Staktek Group, L.P. Applied heat spreader with cooling fin
US7295433B2 (en) * 2005-10-28 2007-11-13 Delphi Technologies, Inc. Electronics assembly having multiple side cooling and method
US20070121286A1 (en) * 2005-11-29 2007-05-31 International Business Machines Corporation Memory module airflow redirector
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
KR100849614B1 (ko) * 2006-12-27 2008-07-31 주식회사 이노바텍 회로기판의 방열장치
US7619893B1 (en) 2006-02-17 2009-11-17 Netlist, Inc. Heat spreader for electronic modules
DE102006012446B3 (de) * 2006-03-17 2007-12-20 Infineon Technologies Ag Speichermodul mit einem Mittel zur Kühlung, Verfahren zur Herstellung des Speichermoduls mit einem Mittel zur Kühlung sowie Datenverarbeitungsgerät umfassend ein Speichermodul mit einem Mittel zur Kühlung
US20070274059A1 (en) * 2006-05-25 2007-11-29 Chennupati Raghuram Siva Apparatus and method for shielding of electromagnetic interference of a memory module
TWM304705U (en) * 2006-07-04 2007-01-11 Cooler Master Co Ltd Display card heat sink
US7400506B2 (en) * 2006-07-11 2008-07-15 Dell Products L.P. Method and apparatus for cooling a memory device
JP5069876B2 (ja) 2006-07-13 2012-11-07 新光電気工業株式会社 半導体モジュールおよび放熱板
KR100778022B1 (ko) * 2006-07-14 2007-11-21 주식회사 일창프리시젼 메모리모듈용 히트싱크 제조방법
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
CN101118458A (zh) * 2006-07-31 2008-02-06 华硕电脑股份有限公司 配置均温板的电子装置
US7474529B2 (en) * 2006-11-29 2009-01-06 International Business Machines Corporation Folded-sheet-metal heatsinks for closely packaged heat-producing devices
KR100885027B1 (ko) * 2006-12-21 2009-04-02 티티엠주식회사 메모리 모듈의 방열 장치
WO2008082042A1 (en) * 2006-12-29 2008-07-10 Top Thermal Management Co, . Ltd. Cooling system for memory module
KR100885421B1 (ko) * 2007-02-06 2009-02-24 삼성전자주식회사 인쇄 회로 기판 및 이를 사용하는 반도체 메모리 모듈
US7957134B2 (en) * 2007-04-10 2011-06-07 Hewlett-Packard Development Company, L.P. System and method having evaporative cooling for memory
US7679913B2 (en) * 2007-05-11 2010-03-16 Ming-Yang Hsieh Memory module assembly and heat sink thereof
KR100885976B1 (ko) * 2007-06-25 2009-03-03 삼성전자주식회사 인쇄회로기판, 이를 구비한 메모리 모듈 및 이의 제조방법
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
KR100848837B1 (ko) * 2007-08-06 2008-07-28 주식회사 휘닉스아이씨피 메모리모듈 방열장치 및 그 제조방법
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
KR101403901B1 (ko) 2007-11-05 2014-06-27 삼성전자주식회사 열방사를 위한 방열체
US20090129012A1 (en) * 2007-11-21 2009-05-21 Anton Legen Method and apparatus for heat transfer
KR100955936B1 (ko) 2008-01-02 2010-05-03 주식회사 하이닉스반도체 반도체 패키지 모듈용 방열 장치 및 이를 갖는 반도체패키지 모듈
JP2009230505A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 基板ユニットおよび電子機器
KR100965269B1 (ko) 2008-04-16 2010-06-22 이상철 전자부품 방열장치 및 이를 채용한 메모리모듈
US8018723B1 (en) 2008-04-30 2011-09-13 Netlist, Inc. Heat dissipation for electronic modules
TWM346844U (en) * 2008-05-12 2008-12-11 Comptake Technology Inc Improved heat-dissipating structure for memory device
US7684196B2 (en) * 2008-05-13 2010-03-23 International Business Machines Corporation Enhancing the cooling of dual in-line memory modules
TWM346847U (en) * 2008-05-30 2008-12-11 Comptake Technology Inc Improved heat dissipation module of memory
US7715197B2 (en) * 2008-06-05 2010-05-11 International Business Machines Corporation Coined-sheet-metal heatsinks for closely packaged heat-producing devices such as dual in-line memory modules (DIMMs)
JP5557441B2 (ja) * 2008-10-31 2014-07-23 日立オートモティブシステムズ株式会社 電力変換装置および電動車両
US20100134982A1 (en) * 2008-12-01 2010-06-03 Meyer Iv George Anthony Memory heat dissipating structure and memory device having the same
WO2010144624A1 (en) 2009-06-09 2010-12-16 Google Inc. Programming of dimm termination resistance values
CN101998808A (zh) * 2009-08-25 2011-03-30 富准精密工业(深圳)有限公司 散热装置
DE102009044368B4 (de) * 2009-10-30 2014-07-03 Lear Corporation Gmbh Kühlanordnung
US8767403B2 (en) * 2009-10-30 2014-07-01 Hewlett-Packard Development Company, L.P. Frame having frame blades that participate in cooling memory modules
GB2488738B (en) 2010-03-08 2014-02-12 Ibm Liquid dimm cooling device
US8139355B2 (en) 2010-05-24 2012-03-20 International Business Machines Corporation Memory module connector having memory module cooling structures
TWI391087B (zh) * 2010-06-07 2013-03-21 Hon Hai Prec Ind Co Ltd 擴充卡裝置及其散熱器
CN201725266U (zh) * 2010-06-17 2011-01-26 深圳富泰宏精密工业有限公司 内存条散热组件
CN102541218A (zh) * 2010-12-25 2012-07-04 鸿富锦精密工业(深圳)有限公司 用于内存模块的散热装置
US9076753B2 (en) 2012-05-18 2015-07-07 International Business Machines Corporation Apparatus for the compact cooling of modules
US9437518B2 (en) 2012-10-29 2016-09-06 Samsung Electronics Co., Ltd. Semiconductor module
KR102127335B1 (ko) * 2012-10-29 2020-06-30 삼성전자주식회사 반도체 모듈
HK1210376A2 (zh) 2015-08-17 2016-04-15 馮文標 號 大功率半導體和散熱器的組裝結構
USD819746S1 (en) * 2018-01-08 2018-06-05 David Theodore Bernstein Chess board
US11011452B2 (en) * 2018-11-29 2021-05-18 Micron Technology, Inc. Heat spreaders for semiconductor devices, and associated systems and methods
US11079820B2 (en) 2019-01-15 2021-08-03 Microsoft Technology Licensing, Llc Method and apparatus for improving removable storage performance
US11520311B2 (en) 2019-07-25 2022-12-06 Microsoft Technology Licensing, Llc High performance removable storage devices
TWI777280B (zh) * 2020-10-27 2022-09-11 技嘉科技股份有限公司 擴充卡外殼、擴充卡模組及伺服器
CN114428539B (zh) * 2020-10-29 2024-05-14 技钢科技股份有限公司 扩充卡外壳、扩充卡模块及服务器
US11612084B1 (en) * 2020-12-18 2023-03-21 Zoox, Inc. Modular heatsink for vehicle computer cooling architecture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
JPH07202120A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 高放熱型メモリおよび高放熱型メモリモジュール
DE9415755U1 (de) * 1994-09-29 1994-11-24 Siemens Nixdorf Informationssysteme AG, 33106 Paderborn Anordnung von hochintegrierten Schaltkreisen auf einer Mehrlagenkeramik
US5587608A (en) * 1995-10-27 1996-12-24 Meng; Ching-Ming Structure heat sink for power semiconductors
US5815371A (en) * 1996-09-26 1998-09-29 Dell U.S.A., L.P. Multi-function heat dissipator
US5959839A (en) * 1997-01-02 1999-09-28 At&T Corp Apparatus for heat removal using a flexible backplane
US5867367A (en) * 1997-12-04 1999-02-02 Intel Corporation Quad flat pack integrated circuit package

Also Published As

Publication number Publication date
DE19928075A1 (de) 2000-01-27
JPH11354701A (ja) 1999-12-24
TW405248B (en) 2000-09-11
KR20000006134A (ko) 2000-01-25
US20020001180A1 (en) 2002-01-03
KR100297226B1 (ko) 2001-11-01
CN1239327A (zh) 1999-12-22
JP3109479B2 (ja) 2000-11-13
US6424532B2 (en) 2002-07-23
DE19928075B4 (de) 2010-04-08

Similar Documents

Publication Publication Date Title
CN1157783C (zh) 壳式热沉及带壳式热沉的存储器模块
CN1250971C (zh) 传感器封装盒
US5834848A (en) Electronic device and semiconductor package
KR101194429B1 (ko) 반도체장치 및 그 제조방법
EP0338249B1 (en) Electronic package
EP0674346B1 (en) Connecting terminals for semiconductor package
US20020162678A1 (en) Electronic apparatus
KR20010031110A (ko) 마이크로전자 패키지를 열적으로 향상시키는 방법 및 구조체
KR100620879B1 (ko) 플립 칩 반도체 장치
KR19990007268A (ko) 반도체 장치
US11581230B2 (en) Power semiconductor module and a method for producing a power semiconductor module
CA2334524C (en) Electronic apparatus provided with an electronic circuit substrate having high heat dissipation
CN1577839A (zh) 混合集成电路
KR100271836B1 (ko) 금속성 전자 부품 패키지 장치
JP2005353867A (ja) 半導体装置
KR100532863B1 (ko) 탄성 중합체를 사용하는 반도체 패키지
JPH0773110B2 (ja) 半導体集積回路装置
CN117438390B (zh) 一种金属陶瓷全密封封装的过压过流保护开关和系统
US20230268290A1 (en) Semiconductor Devices Having Supportive Plating Structures
US20230124688A1 (en) Power semiconductor module arrangement and method for producing a power semiconductor module arrangement
KR0156513B1 (ko) 반도체패키지
CN117203757A (zh) 电子控制装置
CN112530888A (zh) 一种功率模块及其制造方法
CN116134604A (zh) 包括盖结构的基底、包括基底的封装基底以及半导体装置
JP4596698B2 (ja) 放熱部材および半導体素子収納用パッケージ

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: NEC ELECTRONICS TAIWAN LTD.

Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.

Effective date: 20030509

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20030509

Address after: Kanagawa, Japan

Applicant after: NEC Corp.

Address before: Tokyo, Japan

Applicant before: NEC Corp.

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: NEC ELECTRONICS TAIWAN LTD.

Effective date: 20050520

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20050520

Address after: Tokyo, Japan

Applicant after: NEC Corp.

Co-applicant after: NEC Corp.

Address before: Tokyo, Japan

Applicant before: NEC Corp.

C56 Change in the name or address of the patentee

Free format text: FORMER NAME OR ADDRESS: NEC ELECTRONICS TAIWAN LTD.

Owner name: ELPIDA MEMORY INC.

Free format text: FORMER NAME OR ADDRESS: NIPPON ELECTRIC CO., LTD.

CP03 Change of name, title or address

Address after: Tokyo, Japan

Patentee after: Nihitatsu Memory Co., Ltd.

Address before: Tokyo, Japan

Co-patentee before: NEC Corp.

Patentee before: NEC Corp.

ASS Succession or assignment of patent right

Owner name: PS4 LASCO CO., LTD.

Free format text: FORMER OWNER: NIHITATSU MEMORY CO., LTD.

Effective date: 20130905

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130905

Address after: Luxemburg Luxemburg

Patentee after: PS4 Russport Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Nihitatsu Memory Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040714

Termination date: 20140614

EXPY Termination of patent right or utility model