TW405248B - Heat sink and memory module with heat sink - Google Patents

Heat sink and memory module with heat sink Download PDF

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TW405248B
TW405248B TW088109945A TW88109945A TW405248B TW 405248 B TW405248 B TW 405248B TW 088109945 A TW088109945 A TW 088109945A TW 88109945 A TW88109945 A TW 88109945A TW 405248 B TW405248 B TW 405248B
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heat sink
memory module
memory
printed circuit
patent application
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TW088109945A
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Masashi Kawamura
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Nippon Electric Co
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
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    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • HELECTRICITY
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    • H01L2225/107Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
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    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
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Description

----——έΛ5248---- 5·、發明說明(1) . 【發明之背景】 1.發明之領域 本發明係關於可裝著於一記憶體模組的一散熱體’以 及安裝有散熱體之一記憶體模組;尤有關於在一印刷電路 板上主要安裝有複數之⑽龍的記憶體模組中所安裝的散熱 體’以及安裝有散熱體之此一記憶體模組。 2 ·相關技術之描述 近來’半導體記憶體,如動態隨機存取記憶體 (DRAM ’dynamic random access memory)的運算速度和儲 存容量都快速地進步。由於半導體記憶體集積密度的增 加’半導體記憶體積體電路產生的熱量也相對增加。另 外’容納包括半導體記憶體丨c的微電子元件模組有縮小體 積的需求。另一方面,某些記憶體模組使用包括一 IC之類 的元件來補償因個別DRAM運算速度的提升而導致的信號時 間延遲。因此,除半導體記憶體丨C之外,許多IC和晶片型 ::兀:會安裝在印刷電路板上’因此安裝在記憶體模組 中的7L件數目有增多的趨勢。 u m 的筏術將以參照圖1 Α *1β的方 式加以次明,其中圖1 Α和1Β為典型習4 概略平面圖和概略側視圖。如‘:技術§己憶體椟、,且的 複數個安裝於印刷電路板丨各括面數上個/日|記憶體旧,以及 刷電路板1具有-接觸㈣列4的:片型電容152。該印 买·延著印刷電路板1各面
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五、發明說明(2) 的長邊排列,以和正確的對應插座進行電連接。 如圖1A和1B所示,半導體記憶體IC3和晶片型 以裸露的狀態安裝於印刷電路板丨的各面上,且記 組1 〇以此裸露狀態插入如個人電腦的系統插槽中。’“因此, 記憶體IC3產生的熱只能由記憶體! C3的表面幅射。 在上述的習知技術記憶體模組中,由於記憶體κ 面熱幅射是記憶體i C產生熱散發的唯一方式,ς 到-滿意的散熱效率…由於熱幅射效率本身斤會::達 裝形^影響’所以在增加集積度時會導致匪的 …、a加,而遭遇到記憶體性能下降的新問題。 另外,由於在習知技術記憶體模組中,所有元件都以 稞路的狀態安裝在模組上,因此如電容器和電阻器等位於 記憶體模組的印刷電路板周邊區域的元件,很搬 ==性震動而損壞或遺失。又,隨著記憶體模組之 :!電上安裝IC效能的提升’封裝1c的引針間距變得 =乍,導致另一個新問題產生,即外在因素導致引針的短 路0 另夕b卜丄通常包括記憶體IC之元件安裝於印刷電路板的 方式,疋先將7G件置於印刷在印刷電路板的焊錫 ,再 將印刷電路板放人回流爐中’以將元件焊在印刷電路板 上。在此程序中,印刷電路板常會彎曲,而若元件安裝於 f曲的印刷電路板上’ #記憶體模組插入到—如個人電腦 系統的插槽中時,有應力作用於印刷電路板上,該元 件從印刷電路板上剝離。
五、發明說明(3) 曰本專 (JP-A-07-併入本案中 率地散發I C —散熱基板 熱基板的表 此習知 個高散熱效 路板上時能 雜而昂貴, 方法不能解 英文摘 記憶體 憶體1C 憶體I C 效率, 安裝於 體結構 貴。此 要全文 以有效 連接在 和該散 以使數 印刷電 變得複 外,該 【發明的概述】 因此,本發明的 成配合一記憶體模組 組,以克服上述習知 本發明的另一目 一記憶體模組,且可 封裝半導體記憶體, 記憶體模組印刷電路 判別印刷電路板贊曲 半導體記憶體和其它 本發明的另—目 述之散熱體。 405248 利公開公報第JP-A07-2 02 1 20號 202120的英文摘要可取得,且該 作為參考資料)提出一種高散熱 產生的熱量’其係藉由將封裝記 表面上,且以樹脂覆蓋該封裝記 面。 技術欲提升個別記憶體I c的散熱 率記憶體IC組成的記憶體模組在 有高散熱效率。然而,個別記情 因此’對應的記憶體模組變得昂 決印刷電路板彎曲的問題。 目的之一,為提出一種散熱體,其構 ,以及一種配合該散熱體的記憶體模 技術中的問題。 的’為提出—種散熱體,其構成配合 以有效地散發安裝在記憶體模組上之 ,RAM所A生的#,可以保護安裝在 板上的元件不受機械性震動,也可以 的程度,該印;gll Φ _ “丨刷電路板上安裝有封裝 兀件。 的’為提出-種記憶體模組以配合上
第8頁 404-2 4 & 五、發明說明(4) 本發明上述和其它的目的,係藉由本發明之一種散熱 體達成’該散熱體安裝於由裝設在印刷電路板之數個封裝 S己憶積體電路構成的一記憶體模組中,該散熱體的載面呈 ϋ形’記憶體模組可以插入散熱體的U形凹槽,其間並有一 熱傳導物質和散熱體及記憶積體電路接觸。 在一實施例中,該熱傳導物質具有高熱傳導率,且該 散熱體由彈性物質形成’具有夾持功&,所以記憶體模: :散熱體經由該高熱傳導率物質夾持。該散熱體最好在外 表面具有數個凸面,以增加外表面區域。 其由月之另一實施樣態,提出-種記憶體模組, 於印1電路板之封裝記憶積體電路構成,且 和具有υ形載面之散熱體配合,其 組插入散熱體的U形凹槽中,方法為將記憶體模 物質和散熱體及封裝記:積體電間 在一實施例中,該熱傳導物質 散熱體由彈性物質形成,具有央y有-熱傳導率’且該 以散熱體經由該高熱傳導率物能,所以記憶體模組 為一具有絕緣性之高導熱性橡膠、。該熱傳導物質最好 數個凸面,以增加外表面區::,且散熱體在外表面具有 散熱體可從記憶體模組上移 熱傳導物質為一種矽潤滑脂。;。在另一實施例中,該 該散熱體的長度和其υ形凹楢 有安裝在印刷電路板上的封的深度最好足以覆蓋所 上述本發明之目的、特徵=積體電路。 ' 優點將對照相關圖示於以 五、發明說明(5) 下的較佳實施例中加以說明。 【圖示之簡單說明】 圖1 A和1 B分別為習知技術記憶體模組典型實施例之俯 視圖和概略側視圖; 圖2A和2B分別為本發明第一實施例中,配合散熱體的 記憶體模組之概略俯視圖和概略側視圖; 圖2C為沿圖2B中A-A線之概略部份截面圖; 圖3 A和3B分別為本發明第二實施例中,配合散熱體的 記憶體模組之概略俯視圖和概略側視圖;及 圖3C為沿圖3B中B-B線之概略部份截面圖。 【符號之說明】 1〜印刷電路板 2〜晶片型電容器
3〜記憶體IC 4〜接觸墊 5〜覆蓋及散熱體 5A〜頂板 5B-側板 50側板 5D〜凸面 6 ~碎潤滑脂 7〜夾型覆蓋及散熱體
第10頁 405248 五、發明說明(6) ' - — 〜頂板 〜側板 7 C ~側板 7D〜凸面 8〜高導熱性橡膠 1 〇〜記憶體模組 【較佳實施例之詳細說明】 參考圖2Α和28,顯示一本發明第一實施例中,配合散 ”,、體的記憶體模組之概略俯視圖和概略側視圖。圖2 c為 _中^線之概略部份截面圖。在圖2八、2心2(:中^/ 圖1A和1B中相同的元件將使用相同的對照號碼,並省略且 說明以求簡化。 八 如比較圖ΙΑ、1B和圖2A、2B所示,第一實施例的特 徵,為習知記憶體模組1〇(包括複數個記憶體IC3,複數個 安裝於印刷電路板1上的晶片型電容器2,及數個位於印刷 電路板1 一邊緣上的接觸墊4)和一根據本發明之「覆蓋及 散熱體」5配合。此「覆蓋及散熱體」5具有一如圖2B所示 的u形截面《即,「覆蓋及散熱體」5具有一頂板5A,和一 對側板5 B及5 C從頂板兩側縱向垂直向下延伸,以在其間形 成一U形深凹槽。側板5B和5C相對内平面間的距離s比記憶 體模組1 0的厚度T大。此距離S從側板5B和5C的上緣到下緣 是安裝的。「覆蓋及散熱體」5的長度L和U形深凹槽的深 度D(從頂板5A的内部平面到該對側板5B及5C自由邊的距
III
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五、發明說明(7) T)上以覆蓋安裝在印刷電路板1上所有的封裝 :70件,:維持接觸墊4為曝露的狀態。在顯示%的 J ,「覆蓋及散熱體」5的長度匕比從最左邊封裝呓憶: 之左側到最右邊封裝記憶體Ic之右側的距離長,、在圖、 ,但比印刷電路板1的長度短,且其深度D稍微比從印刷 =狀之:端到封裝記憶體Κ之底端的距離長,如嶋 另外,如圖2A和2B所示,至少「覆蓋及散熱 該對側板5B和5C在外平面最好有數個凸面或小凸起^。、 因此、,該「覆蓋及散熱體」5配合於記憶體模組1〇上 =方式,為將記憶體模組丨〇插入該對侧板5B和5(:間的u形 罙凹槽且所有女裝在印刷電路板1各面的記憶體IC3和其 它=2都以側板5W5C覆蓋,但接觸墊4並未被侧板冗和 覆盍。在此狀態下,如圖2C所示,以具有良好導熱性及 絕緣性的矽潤滑脂6填入各側板5B和5(:和各封裝記 之間的空間,使各封裝記憶體IC3產生的熱經由矽^滑脂6 ,導至對應的側板5B或5C。由於該矽潤滑脂6存在於「覆 ,及,熱體」5的側板5B和5C與各封裝記憶體IC3之間, 「覆蓋及散熱體」5可和記憶體模組丨〇分開。 如上所述,在第一實施例中,該「覆蓋及散熱體」5 ,合於習知記憶體模組1 〇上,矽潤滑脂6填充於「覆蓋及 散熱體」5與封裝記憶體IC3之間。在此安排下,由各封裝 記憶體IC3產生的熱經由矽潤滑脂6傳導至「覆蓋及散熱 體」5,且熱經由「覆蓋及散熱體」5幅射。由於「覆蓋及 第12頁 五、發明說明(8) 散熱體」5的外类, h 表面區域比女裝在印刷電路板1 的埶可瘦A「费表面區域顯者為大,封裝記憶體iC3產生 ▲散熱體」5散發出去,其散熱比圖1A 矛所不之1知記憶體模組1〇更有效率。此處,即使「覆 蓋及散熱體」5的外表面沒^ S5D,若 y吏覆 I」5/:卜/面比安裝在印刷電路板1上之封裝記上 ^目對外表面區域顯著為大,則「覆蓋及散熱體」5的外 表面就不必要具有凸面51)。然而,由於可以更增加「覆蓋 及散熱體」5的外表面,所以最好在「覆蓋及散熱體」5的 外表面上具備有凸面5D。 又,由於所有安裝在印刷電路板】上的封裝記憶體K3 和其它元件2都被「覆蓋及散熱體」5覆蓋,位於印刷電路 板1周邊區域的晶片型元件,如電容器和電阻器都受到保 護不受機械性震動,所以位於記憶體模組印刷電路板周邊 區域的晶片型元件不會因為運輸而損壞或遺失。 另外’如上所述,當包括記憶體丨C的元件以融化印刷 電路板上焊錫膏的方式安裝在印刷電路板上時,印刷電路 板常會彎曲。如果印刷電路板的彎曲程度超過一定的界限 時’ 「覆蓋及散熱體」5不能和記憶體模組1 〇配合。因 此’可以基於「覆蓋及散熱體」5是否可以和記憶體模組 1 0配合,來判別印刷電路板彎曲的程度。如此,可以防止 印刷電路板上的元件因為彎曲超過了限度,而在插入如個 人電腦的插槽時,產生元件從印刷電路板剝離的情形。 在此第一實施例中’ 「覆蓋及散熱體」5必須有好的
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_405248 五、發明說明(9) 導熱性和機械強度,1 〜 元件2和3不受到機械^ ^女裝在P刷電路板1上的 5可由金屬或陶磁製成。另:所以,該覆蓋及散熱體」 與其相同的黏滞度Λ/定V石夕二f脂6可以用任何具有 料取代。又,若「涛ΐ 絕緣性和良好導熱性的材 合後不f Μ # 0覆盍及散熱體」5在與記憶體模組10配 2:而要拆卸’則矽濁滑脂 性和良好導熱性的緊密接觸型黏接劑取代 絕緣 *,二其分別顯示根據本發明的第二實施例 & = 5散熱體的概略平面圖和概略截面圖。 圖3C為:圖3B中"’線的概略部份截面圖 碼,並省略其說明以求2同的-件使用相同的對照號 如=圖3A、3B及離、2,及2(:所示,第二實施例 :第-“例之不同處’在於第一實施例的「覆蓋及散熱 」5和矽潤滑脂6,在第二實施例中分別以夾型「覆蓋及 散熱體」7和-種具有絕緣特性的高導熱性橡膠8取代。 該夾型「覆蓋及散熱體」7由彈性材料形成,例如且 有彈性的金屬或陶磁,以及,的截面,如圖3B所示:、 更明確地,該夾型「覆蓋及散熱體」7具有一頂板7a和一 對侧板7B及7C,其先從頂板7A的縱向兩邊稍微向内延伸— 短距離,再向下垂直延伸’以在其間形成一U形深凹槽, 且在側板7 B及7 C間具有夾持功能。 另外’和第一實施例相同,至少在該對夾型「覆蓋及 散熱體」7的側板7B和7C外表面上最好具有數個凸面或小
第14頁 五'發明說明(10) --- 凸起7D,增加表面區域以提升熱幅射效率。但,不只該對 側板7B與7C,頂板7A的外表面也可具有凸面或小凸起7D。 和第一貫施例相同,側板7B和7C相對内平面間的距離 S比記憶體模組10的厚度TA。「覆蓋及散熱體」7的長度L 和ϋ形深凹槽的深度D(從頂板7A的内部平面到該對側板几 及7C自由邊的距離)足以覆蓋安裝在印刷電路板i上所有的 封裝記憶體IC和其它元件,只維持接觸墊4為曝露的狀 態。另外,各側板7B和7C垂直部份的大小,足以覆蓋所有 安裝在印刷電路板1上的封裝記憶體丨c和其它元件,如圖 3B所示。 因此,该夾型「覆蓋及散熱體」7配合於記憶體模組 1 0上的方式,為將記憶體模組丨〇插入該對侧板7B和7(:間的 U形深凹槽,且所有安裝在印刷電路板丨各面的記憶體IC3 和其它元件2都以侧板几和几覆蓋,且以高導熱性橡膠8安 裝於側板7B和7C間,該高導熱性橡膠8插入於各側板7β和 7C之内表面及各封裝記憶體〗C3之間。 ,此第二實施例中,由於「覆蓋及散熱體」5以夾型 「覆蓋及散熱體」7取代,其係以具有高導熱性之彈性橡 膠8插入於側板7B及7C和封裝記憶體IC3間,所以和第一實 施例相比丄夾型「覆蓋及散熱體」7和封裝記憶體IC3間的 密接性提高。因此,各封裝記憶體丨C3產生的熱可以更有 效率地經由南導熱性橡膠8傳導至夾型「覆蓋及散熱體」 7,以將熱自夾型「覆蓋及散熱體」7表面幅射出去。 和第一實施例相同,由於夾型「覆蓋及散熱體」7的
第15頁 五、發明說明(11) 2表面區域比安裝在印刷電路板1上之封裝記憶體丨C3的相 外表面區域顯著為大,封裝記憶體IC3產生的熱可經由 ^型2覆蓋及散熱體」7散發出去’其散熱比圖1A和1B所 不之白知s己憶體模組1 〇更有效率。另外,和第一實施例相 =由於夾型「覆蓋及散熱體」7和封裝記憶體IC3間沒有 #接,封裝§己憶體IC 3產生的熱可比第一實施例中的「覆 盖及散熱體」5更有效率地散發。 「 由於失型「覆蓋及散熱體」7具有彈性,當夾型 覆蓋及散熱體」7夾持記憶體模組1 〇時,會施加一適當 f上,所以和第一實施例中使用矽潤滑脂6比較, 覆蓋及散熱體」從記憶體模組1 〇上脫落的可能性較小。 ’和第一實施例相同,由於安褒在印刷電路板1上 =】:fIC3和其它元件2由爽型「覆蓋及散熱體」7 G阻;;:刷電路板1周邊區域的晶片型元件如電容器 ,益等都觉到保護不受機餘震動, 體柄組印刷電路板周邊區域的晶片型 才貝壞或遺失。 會因為運輸而 另外,如上所述,當包括記憶體丨c 電路板上焊錫膏的方式忠姑—f ,杂 疋件以融化印刷 妬赍$ _:式文裝在印刷電路板上時,印刷雷政 Ξ Π ί果印刷電路板的·f曲程度超過-Γ的:: 因Λ 1覆盍及散熱體」7不能和記憶體模〇配入| ( 因此,和筮一杳# A丨h η 叫柄組1 U配合。 矛第實加例相同’可以基於夾型 體」7是否可以和記憶體模組i 覆盍及散熱 ^ ^ ^ . . , ep ,(J , 双上的7L件因為彎 >5248 五、發明說明G2) 曲超過了限度’而在插入如個 從印刷電路板剝離的情形。電細的插槽時’產生元件 如上所述’根據本發明,知批# μ 有以下的優點·· 散.、·、體配合之記憶體模組 優點為’安裝在記憶 “件所產生的熱可以有效率 :裝:己隐體1 C和其 4 i f L 丨寺的發熱體經由具有高導埶性之矽f # 脂或尚導熱性之橡膠連接$ 「w从ΛΓ= ,、 矽潤滑 體所產决沾舶士 覆蓋及散熱體J ,所以發孰 遐所屋生的熱有效率地傳導至「 … :。有大表面區域的「覆蓋及散熱體」表面散發出 受機由;路板上的元件受到保護不 機械強度可:保d 散熱體」具有足夠的 需動,所u r °隻裝於印刷電路板上的元件不受機械性 元件上。。卩施加的力不會施加到安裝於印刷電路板的 第二優點為,可以判別印刷電路板的彎曲程度是否超 触允許的界限。因$ ’若印刷電路板的彎曲(當包括 心 的元件女裳在印刷電路板上時,由於熱或其它原 因而發生)超過-界限,「覆蓋及散熱體」就不能配合於 記憶體模組上。另夕卜,即使「覆蓋及散熱體」可以配合於 有輕微彎曲的記憶體模組上,也可以經由對配合有「覆蓋 及散熱體」的記憶體模組進行一電子測試,以檢查安裝在 405248 五、發明說明(13) 印刷電路板上的元件是否有從印刷電路板剝離。因此,可 以避免有缺陷的記憶體模組供應到市場去。 本發明已根據特定實施例加以描述和說明。然而,應 注意本發明可在不離開後附申請專利範圍之範疇内進行變 化及修改,故不能被舉例性的詳細結構所限制。
第18頁

Claims (1)

  1. 六、申請專利範圍 數個1封裝電安裝在-印刷電路板上的複 的截面呈U形,兮4 斤汲成之一記憶體模組,該散熱體 其間並有—熱傳導?體模組可以插入散熱體的U形凹槽’ 板上的該封裝記憶2置於散熱體和該安裝在該印刷電路 憶積體電路接觸Γ 電路之間,並和散熱體及該封裝記 2. 如申.請專利範圍 該熱傳導物質且古:也▲散熱體 中. 料形成,❿具有夾持:南熱傳導性,且該散熱體由彈性材 由該高熱傳導性物質:,該記憶體模組由該散熱體經 3. 如申請專利範 $ 該散熱體之外表面 之散熱體. 域。 $具有數個凸面以增#其外表面區 4該=::專#卜園第1項之散熱體,其中: ~ ’、、、之$表面具有數個凸面以增加其外表面區 域0 個封模紐,由安裝在-印刷電路板上的複數 埶體配合,盆事μ方=成,且裝設有一具有ϋ形截面之散 U形凹槽中/並~將°"一鼓式#為將該記憶體模組插入該散熱體的 記憶積體電路之間Γ並傳5導物質爽置於該散熱體和該封裝 接觸。 I和該散熱體及該封裝記憶積體電路 6^專利申請範圍第 該熱傳導物質I右^ & 己11體模組其中· 〃力円熱傳導性,且該散熱體由彈性材 _405248_ 六、申請專利範圍 料形成,而具有夾持作用,該記憶體模組由該散熱體經由 該高熱傳導性物質夾持。 7. 如專利申請範圍第6項之記憶體模組,其中: 該熱傳導物質為一具有電絕緣性之高導熱性橡膠。 8. 如專利申請範圍第6項之記憶體模組,其中: 該散熱體之外表面具有數個凸面以增加其外表面區 域。 9. 如專利申請範圍第6項之記憶體模組,其中: 該散熱體可從記憶體模組拆卸。 1 0.如專利申請範圍第5項之記憶體模組,其中: 該熱傳導物質為一矽潤滑脂。 11.如專利申請範圍第1 0項之記憶體模組,其中: 該散熱體之外表面具有數個凸面以增加其外表面區 域。 1 2.如專利申請範圍第1 0項之記憶體模組,其中: 該散熱體可從記憶體模組拆卸。 1 3.如專利申請範圍第5項之記憶體模組,其中: 該散熱體之外表面具有數個凸面以增加其外表面區 域。 1 4.如專利申請範圍第5項之記憶體模組,其中: 該散熱體可從記憶體模組拆卸。 1 5.如專利申請範圍第5項之記憶體模組,其中: 該熱傳導物質為一具有電絕緣性之高導熱性橡膠。 1 6.如專利申請範圍第5項之記憶體模組,其中:
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777280B (zh) * 2020-10-27 2022-09-11 技嘉科技股份有限公司 擴充卡外殼、擴充卡模組及伺服器

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3831159B2 (ja) * 1999-10-18 2006-10-11 日本圧着端子製造株式会社 コネクタ付電子モジュール
US7301776B1 (en) * 2004-11-16 2007-11-27 Super Talent Electronics, Inc. Light-weight flash hard drive with plastic frame
KR100370270B1 (ko) * 2000-01-19 2003-01-30 원지금속 주식회사 컴퓨터 램용 히터싱크와 그 제조방법
DE10038161A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Kühlvorrichtung für elektronische Bauteile und Verfahren zur Herstellung der Kühlvorrichtung
KR100389920B1 (ko) * 2000-12-12 2003-07-04 삼성전자주식회사 열팽창에 의한 신뢰성 저하를 개선할 수 있는 반도체 모듈
DE10134983A1 (de) * 2001-07-18 2002-09-19 Infineon Technologies Ag Anordnung zur Kühlung integrierter Halbleiterbausteine
DE10343525B4 (de) 2002-09-27 2011-06-16 Qimonda Ag Verfahren zum Betreiben von Halbleiterbausteinen, Steuervorrichtung für Halbleiterbausteine und Anordnung zum Betreiben von Speicherbausteinen
US6711021B1 (en) * 2003-01-15 2004-03-23 Hewlett-Packard Development Company, L.P. Systems and methods that use at least one component to remove the heat generated by at least one other component
US6967843B2 (en) * 2003-02-11 2005-11-22 Hewlett-Packard Development Company, L.P. System and method for dissipating heat from an electronic board
WO2004100262A1 (ja) * 2003-05-07 2004-11-18 Fujitsu Limited 冷却部品、基板及び電子機器
US20050014308A1 (en) * 2003-07-17 2005-01-20 Yuan-Ping Tseng Manufacturing process of memory module with direct die-attachment
JP3845408B2 (ja) * 2003-10-06 2006-11-15 エルピーダメモリ株式会社 メモリモジュール放熱装置
JP2005150454A (ja) * 2003-11-17 2005-06-09 Yaskawa Electric Corp 電力変換装置の冷却構造
US7023700B2 (en) * 2003-12-24 2006-04-04 Super Talent Electronics, Inc. Heat sink riveted to memory module with upper slots and open bottom edge for air flow
DE102004009055B4 (de) * 2004-02-23 2006-01-26 Infineon Technologies Ag Kühlanordnung für Geräte mit Leistungshalbleitern und Verfahren zum Kühlen derartiger Geräte
KR100558065B1 (ko) * 2004-03-15 2006-03-10 삼성전자주식회사 방열체가 구비된 반도체 모듈
KR100564620B1 (ko) 2004-03-31 2006-03-29 삼성전자주식회사 열방출 특성을 개선한 메모리 모듈, 메모리 모듈용 소켓및 이를 이용한 메모리 모듈용 소켓 사용방법
US7254036B2 (en) * 2004-04-09 2007-08-07 Netlist, Inc. High density memory module using stacked printed circuit boards
US7079396B2 (en) 2004-06-14 2006-07-18 Sun Microsystems, Inc. Memory module cooling
EP1626410B1 (en) * 2004-08-13 2007-05-09 Wan-Chien Chang Heat radiating and protective device for a memory module
KR20060018453A (ko) * 2004-08-24 2006-03-02 삼성전자주식회사 히트 싱크를 갖는 반도체 소자
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
US7443023B2 (en) * 2004-09-03 2008-10-28 Entorian Technologies, Lp High capacity thin module system
US7768785B2 (en) * 2004-09-29 2010-08-03 Super Talent Electronics, Inc. Memory module assembly including heat-sink plates with heat-exchange fins attached to integrated circuits by adhesive
US7609523B1 (en) 2004-09-29 2009-10-27 Super Talent Electronics, Inc. Memory module assembly including heat sink attached to integrated circuits by adhesive and clips
US7215551B2 (en) * 2004-09-29 2007-05-08 Super Talent Electronics, Inc. Memory module assembly including heat sink attached to integrated circuits by adhesive
JP2006140192A (ja) * 2004-11-10 2006-06-01 Matsushita Electric Ind Co Ltd 電子回路装置
US7521788B2 (en) * 2004-11-15 2009-04-21 Samsung Electronics Co., Ltd. Semiconductor module with conductive element between chip packages
JP2006148105A (ja) * 2004-11-15 2006-06-08 Samsung Electronics Co Ltd 半導体モジュール及びその製造方法
KR100659071B1 (ko) * 2004-11-19 2006-12-21 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
US7310036B2 (en) * 2005-01-10 2007-12-18 International Business Machines Corporation Heat sink for integrated circuit devices
DE102006005955B4 (de) * 2005-02-02 2007-01-25 Samsung Electronics Co., Ltd., Suwon Inline-Speichermodul
KR100702016B1 (ko) 2005-02-02 2007-03-30 삼성전자주식회사 양면 실장 메모리 모듈의 인쇄 회로 기판 및 이를이용하는 양면 실장 메모리 모듈
US7248351B2 (en) * 2005-02-25 2007-07-24 Infineon Technologies Ag Optimizing light path uniformity in inspection systems
US7289331B2 (en) * 2005-03-30 2007-10-30 International Business Machines Corporation Interposable heat sink for adjacent memory modules
JP2006287080A (ja) * 2005-04-04 2006-10-19 Hitachi Ltd メモリモジュール
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
GB2441726B (en) 2005-06-24 2010-08-11 Metaram Inc An integrated memory core and memory interface circuit
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US7609567B2 (en) * 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
KR100693920B1 (ko) 2005-07-07 2007-03-12 삼성전자주식회사 히트 스프레더, 이를 갖는 반도체 패키지 모듈 및 메모리모듈
US7442050B1 (en) 2005-08-29 2008-10-28 Netlist, Inc. Circuit card with flexible connection for memory module with heat spreader
JP5242397B2 (ja) 2005-09-02 2013-07-24 メタラム インコーポレイテッド Dramをスタックする方法及び装置
US20070070607A1 (en) * 2005-09-23 2007-03-29 Staktek Group, L.P. Applied heat spreader with cooling fin
US7295433B2 (en) * 2005-10-28 2007-11-13 Delphi Technologies, Inc. Electronics assembly having multiple side cooling and method
US20070121286A1 (en) * 2005-11-29 2007-05-31 International Business Machines Corporation Memory module airflow redirector
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
KR100849614B1 (ko) * 2006-12-27 2008-07-31 주식회사 이노바텍 회로기판의 방열장치
US7619893B1 (en) 2006-02-17 2009-11-17 Netlist, Inc. Heat spreader for electronic modules
DE102006012446B3 (de) * 2006-03-17 2007-12-20 Infineon Technologies Ag Speichermodul mit einem Mittel zur Kühlung, Verfahren zur Herstellung des Speichermoduls mit einem Mittel zur Kühlung sowie Datenverarbeitungsgerät umfassend ein Speichermodul mit einem Mittel zur Kühlung
US20070274059A1 (en) * 2006-05-25 2007-11-29 Chennupati Raghuram Siva Apparatus and method for shielding of electromagnetic interference of a memory module
TWM304705U (en) * 2006-07-04 2007-01-11 Cooler Master Co Ltd Display card heat sink
US7400506B2 (en) * 2006-07-11 2008-07-15 Dell Products L.P. Method and apparatus for cooling a memory device
JP5069876B2 (ja) 2006-07-13 2012-11-07 新光電気工業株式会社 半導体モジュールおよび放熱板
KR100778022B1 (ko) * 2006-07-14 2007-11-21 주식회사 일창프리시젼 메모리모듈용 히트싱크 제조방법
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
CN101118458A (zh) * 2006-07-31 2008-02-06 华硕电脑股份有限公司 配置均温板的电子装置
US7474529B2 (en) * 2006-11-29 2009-01-06 International Business Machines Corporation Folded-sheet-metal heatsinks for closely packaged heat-producing devices
KR100885027B1 (ko) * 2006-12-21 2009-04-02 티티엠주식회사 메모리 모듈의 방열 장치
WO2008082042A1 (en) * 2006-12-29 2008-07-10 Top Thermal Management Co, . Ltd. Cooling system for memory module
KR100885421B1 (ko) * 2007-02-06 2009-02-24 삼성전자주식회사 인쇄 회로 기판 및 이를 사용하는 반도체 메모리 모듈
US7957134B2 (en) * 2007-04-10 2011-06-07 Hewlett-Packard Development Company, L.P. System and method having evaporative cooling for memory
US7679913B2 (en) * 2007-05-11 2010-03-16 Ming-Yang Hsieh Memory module assembly and heat sink thereof
KR100885976B1 (ko) * 2007-06-25 2009-03-03 삼성전자주식회사 인쇄회로기판, 이를 구비한 메모리 모듈 및 이의 제조방법
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
KR100848837B1 (ko) * 2007-08-06 2008-07-28 주식회사 휘닉스아이씨피 메모리모듈 방열장치 및 그 제조방법
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
KR101403901B1 (ko) 2007-11-05 2014-06-27 삼성전자주식회사 열방사를 위한 방열체
US20090129012A1 (en) * 2007-11-21 2009-05-21 Anton Legen Method and apparatus for heat transfer
KR100955936B1 (ko) 2008-01-02 2010-05-03 주식회사 하이닉스반도체 반도체 패키지 모듈용 방열 장치 및 이를 갖는 반도체패키지 모듈
JP2009230505A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 基板ユニットおよび電子機器
KR100965269B1 (ko) 2008-04-16 2010-06-22 이상철 전자부품 방열장치 및 이를 채용한 메모리모듈
US8018723B1 (en) 2008-04-30 2011-09-13 Netlist, Inc. Heat dissipation for electronic modules
TWM346844U (en) * 2008-05-12 2008-12-11 Comptake Technology Inc Improved heat-dissipating structure for memory device
US7684196B2 (en) * 2008-05-13 2010-03-23 International Business Machines Corporation Enhancing the cooling of dual in-line memory modules
TWM346847U (en) * 2008-05-30 2008-12-11 Comptake Technology Inc Improved heat dissipation module of memory
US7715197B2 (en) * 2008-06-05 2010-05-11 International Business Machines Corporation Coined-sheet-metal heatsinks for closely packaged heat-producing devices such as dual in-line memory modules (DIMMs)
JP5557441B2 (ja) * 2008-10-31 2014-07-23 日立オートモティブシステムズ株式会社 電力変換装置および電動車両
US20100134982A1 (en) * 2008-12-01 2010-06-03 Meyer Iv George Anthony Memory heat dissipating structure and memory device having the same
WO2010144624A1 (en) 2009-06-09 2010-12-16 Google Inc. Programming of dimm termination resistance values
CN101998808A (zh) * 2009-08-25 2011-03-30 富准精密工业(深圳)有限公司 散热装置
DE102009044368B4 (de) * 2009-10-30 2014-07-03 Lear Corporation Gmbh Kühlanordnung
US8767403B2 (en) * 2009-10-30 2014-07-01 Hewlett-Packard Development Company, L.P. Frame having frame blades that participate in cooling memory modules
GB2488738B (en) 2010-03-08 2014-02-12 Ibm Liquid dimm cooling device
US8139355B2 (en) 2010-05-24 2012-03-20 International Business Machines Corporation Memory module connector having memory module cooling structures
TWI391087B (zh) * 2010-06-07 2013-03-21 Hon Hai Prec Ind Co Ltd 擴充卡裝置及其散熱器
CN201725266U (zh) * 2010-06-17 2011-01-26 深圳富泰宏精密工业有限公司 内存条散热组件
CN102541218A (zh) * 2010-12-25 2012-07-04 鸿富锦精密工业(深圳)有限公司 用于内存模块的散热装置
US9076753B2 (en) 2012-05-18 2015-07-07 International Business Machines Corporation Apparatus for the compact cooling of modules
US9437518B2 (en) 2012-10-29 2016-09-06 Samsung Electronics Co., Ltd. Semiconductor module
KR102127335B1 (ko) * 2012-10-29 2020-06-30 삼성전자주식회사 반도체 모듈
HK1210376A2 (zh) 2015-08-17 2016-04-15 馮文標 號 大功率半導體和散熱器的組裝結構
USD819746S1 (en) * 2018-01-08 2018-06-05 David Theodore Bernstein Chess board
US11011452B2 (en) * 2018-11-29 2021-05-18 Micron Technology, Inc. Heat spreaders for semiconductor devices, and associated systems and methods
US11079820B2 (en) 2019-01-15 2021-08-03 Microsoft Technology Licensing, Llc Method and apparatus for improving removable storage performance
US11520311B2 (en) 2019-07-25 2022-12-06 Microsoft Technology Licensing, Llc High performance removable storage devices
CN114428539B (zh) * 2020-10-29 2024-05-14 技钢科技股份有限公司 扩充卡外壳、扩充卡模块及服务器
US11612084B1 (en) * 2020-12-18 2023-03-21 Zoox, Inc. Modular heatsink for vehicle computer cooling architecture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
JPH07202120A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 高放熱型メモリおよび高放熱型メモリモジュール
DE9415755U1 (de) * 1994-09-29 1994-11-24 Siemens Nixdorf Informationssysteme AG, 33106 Paderborn Anordnung von hochintegrierten Schaltkreisen auf einer Mehrlagenkeramik
US5587608A (en) * 1995-10-27 1996-12-24 Meng; Ching-Ming Structure heat sink for power semiconductors
US5815371A (en) * 1996-09-26 1998-09-29 Dell U.S.A., L.P. Multi-function heat dissipator
US5959839A (en) * 1997-01-02 1999-09-28 At&T Corp Apparatus for heat removal using a flexible backplane
US5867367A (en) * 1997-12-04 1999-02-02 Intel Corporation Quad flat pack integrated circuit package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777280B (zh) * 2020-10-27 2022-09-11 技嘉科技股份有限公司 擴充卡外殼、擴充卡模組及伺服器

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