CN1155064C - 制备理想析氧硅晶片的工艺 - Google Patents

制备理想析氧硅晶片的工艺 Download PDF

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Publication number
CN1155064C
CN1155064C CNB99810597XA CN99810597A CN1155064C CN 1155064 C CN1155064 C CN 1155064C CN B99810597X A CNB99810597X A CN B99810597XA CN 99810597 A CN99810597 A CN 99810597A CN 1155064 C CN1155064 C CN 1155064C
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China
Prior art keywords
wafer
oxygen
technology
silicon
vacancy
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Expired - Fee Related
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CNB99810597XA
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Chinese (zh)
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CN1317152A (zh
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�����ء�J����
罗伯特·J·福斯特
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SunEdison Inc
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SunEdison Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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  • Crystals, And After-Treatments Of Crystals (AREA)
CNB99810597XA 1998-09-02 1999-08-27 制备理想析氧硅晶片的工艺 Expired - Fee Related CN1155064C (zh)

Applications Claiming Priority (2)

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US9886198P 1998-09-02 1998-09-02
US60/098,861 1998-09-02

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CN1317152A CN1317152A (zh) 2001-10-10
CN1155064C true CN1155064C (zh) 2004-06-23

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CNB99810597XA Expired - Fee Related CN1155064C (zh) 1998-09-02 1999-08-27 制备理想析氧硅晶片的工艺

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US (3) US6191010B1 (https=)
EP (1) EP1110240B1 (https=)
JP (1) JP4405083B2 (https=)
KR (1) KR100957729B1 (https=)
CN (1) CN1155064C (https=)
DE (1) DE69933777T2 (https=)
TW (1) TW425636B (https=)
WO (1) WO2000013226A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN105316767A (zh) * 2015-06-04 2016-02-10 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用

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JP4794137B2 (ja) 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン半導体基板の熱処理方法
JP4617751B2 (ja) * 2004-07-22 2011-01-26 株式会社Sumco シリコンウェーハおよびその製造方法
US7846822B2 (en) * 2004-07-30 2010-12-07 The Board Of Trustees Of The University Of Illinois Methods for controlling dopant concentration and activation in semiconductor structures
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JP5561918B2 (ja) * 2008-07-31 2014-07-30 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法
US8476149B2 (en) * 2008-07-31 2013-07-02 Global Wafers Japan Co., Ltd. Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
JP5062217B2 (ja) * 2009-04-30 2012-10-31 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
US8871670B2 (en) 2011-01-05 2014-10-28 The Board Of Trustees Of The University Of Illinois Defect engineering in metal oxides via surfaces
JP2016504759A (ja) 2012-11-19 2016-02-12 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 熱処理により不活性な酸素析出核を活性化する高析出密度ウエハの製造
JP7110204B2 (ja) 2016-12-28 2022-08-01 サンエディソン・セミコンダクター・リミテッド イントリンシックゲッタリングおよびゲート酸化物完全性歩留まりを有するシリコンウエハを処理する方法
EP4010924A4 (en) 2019-08-09 2023-09-13 Leading Edge Equipment Technologies, Inc. WAFER WITH AREAS OF LOW OXYGEN CONCENTRATION
JP2022543358A (ja) 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
US12588445B2 (en) 2022-08-24 2026-03-24 Semiconductor Components Industries, Llc Methods of manufacturing semiconductor devices and semiconductor devices

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105316767A (zh) * 2015-06-04 2016-02-10 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用
CN105316767B (zh) * 2015-06-04 2019-09-24 上海超硅半导体有限公司 超大规模集成电路用硅片及其制造方法、应用

Also Published As

Publication number Publication date
EP1110240B1 (en) 2006-10-25
KR20010082183A (ko) 2001-08-29
WO2000013226A1 (en) 2000-03-09
CN1317152A (zh) 2001-10-10
US20030221609A1 (en) 2003-12-04
WO2000013226A9 (en) 2001-11-22
DE69933777T2 (de) 2007-09-13
US6713370B2 (en) 2004-03-30
JP2002524852A (ja) 2002-08-06
EP1110240A1 (en) 2001-06-27
JP4405083B2 (ja) 2010-01-27
US6579779B1 (en) 2003-06-17
US6191010B1 (en) 2001-02-20
KR100957729B1 (ko) 2010-05-12
TW425636B (en) 2001-03-11
DE69933777D1 (de) 2006-12-07

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