JP4794137B2 - シリコン半導体基板の熱処理方法 - Google Patents
シリコン半導体基板の熱処理方法 Download PDFInfo
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- JP4794137B2 JP4794137B2 JP2004128841A JP2004128841A JP4794137B2 JP 4794137 B2 JP4794137 B2 JP 4794137B2 JP 2004128841 A JP2004128841 A JP 2004128841A JP 2004128841 A JP2004128841 A JP 2004128841A JP 4794137 B2 JP4794137 B2 JP 4794137B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 94
- 229910052710 silicon Inorganic materials 0.000 title claims description 83
- 239000010703 silicon Substances 0.000 title claims description 80
- 238000000034 method Methods 0.000 title claims description 58
- 238000010438 heat treatment Methods 0.000 title claims description 45
- 239000000758 substrate Substances 0.000 title description 11
- 239000004065 semiconductor Substances 0.000 title description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 314
- 229910052757 nitrogen Inorganic materials 0.000 claims description 159
- 238000009826 distribution Methods 0.000 claims description 88
- 239000012298 atmosphere Substances 0.000 claims description 66
- 238000001816 cooling Methods 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 142
- 238000004151 rapid thermal annealing Methods 0.000 description 118
- 238000009792 diffusion process Methods 0.000 description 27
- 239000012299 nitrogen atmosphere Substances 0.000 description 26
- 239000002344 surface layer Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 21
- 238000004364 calculation method Methods 0.000 description 17
- 125000004429 atom Chemical group 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 15
- 238000005247 gettering Methods 0.000 description 15
- 230000007423 decrease Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 150000002829 nitrogen Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 201000006935 Becker muscular dystrophy Diseases 0.000 description 1
- 208000037663 Best vitelliform macular dystrophy Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 N 2 V Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
- 208000020938 vitelliform macular dystrophy 2 Diseases 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
12 表面
14 表面
Claims (4)
- 表面より20μm以内に無欠陥層を有し、かつ、該無欠陥層に近接する内部にBMD密度のM字分布が形成されたシリコンウェーハを製造するためにシリコンウェーハを熱処理する方法であって、
シリコンウェーハの内部の深さ方向のBMD密度のM字分布を決定し、前記BMD密度のM字分布とシリコンウェーハの内部の深さ方向の窒素濃度のM字分布をマッチングさせ、前記窒素濃度のM字分布を達成するように、窒素分圧、昇温速度、保持温度範囲、保持時間、及び降温速度を決定し、前記窒素分圧、昇温速度、保持温度範囲、保持時間及び降温速度で、窒素を含む不活性雰囲気中でRTAを行い、前記RTA後、DZ層形成及びBMD形成のための熱処理を行う熱処理方法。 - 前記RTA後のシリコンウェーハ表面から10μmの位置における窒素濃度が1×1014atoms/cm3以上である請求項1記載の熱処理方法。
- 熱処理用のシリコンウェーハは、酸素濃度が9〜17×1017atoms/cm3のシリコン単結晶より採取したシリコンウェーハである請求項1又は2記載の熱処理方法。
- 前記保持温度範囲が1100〜1300℃であり、前記保持時間が1〜300秒であり、前記不活性雰囲気中の窒素の分圧が0.1〜1%であり、前記降温速度が1〜100℃/秒である請求項1から3いずれか記載の熱処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004128841A JP4794137B2 (ja) | 2004-04-23 | 2004-04-23 | シリコン半導体基板の熱処理方法 |
TW094107680A TWI261299B (en) | 2004-04-23 | 2005-03-14 | Method for heat-treating silicon semiconductor substrate, and the silicon semiconductor substrate treated thereby |
US11/578,814 US7759227B2 (en) | 2004-04-23 | 2005-04-22 | Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treated by the method |
CN2005800118820A CN1943022B (zh) | 2004-04-23 | 2005-04-22 | 硅半导体衬底的热处理方法以及使用该方法处理的硅半导体衬底 |
DE112005000863.0T DE112005000863B4 (de) | 2004-04-23 | 2005-04-22 | Verfahren zur Hitzebehandlung eines Siliziumhalbleitersubstrats |
PCT/JP2005/007716 WO2005104208A1 (ja) | 2004-04-23 | 2005-04-22 | シリコン半導体基板の熱処理方法及び同方法で処理されたシリコン半導体基板 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004128841A JP4794137B2 (ja) | 2004-04-23 | 2004-04-23 | シリコン半導体基板の熱処理方法 |
Publications (2)
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JP2005311200A JP2005311200A (ja) | 2005-11-04 |
JP4794137B2 true JP4794137B2 (ja) | 2011-10-19 |
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JP2004128841A Expired - Lifetime JP4794137B2 (ja) | 2004-04-23 | 2004-04-23 | シリコン半導体基板の熱処理方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7759227B2 (ja) |
JP (1) | JP4794137B2 (ja) |
CN (1) | CN1943022B (ja) |
DE (1) | DE112005000863B4 (ja) |
TW (1) | TWI261299B (ja) |
WO (1) | WO2005104208A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210151814A (ko) | 2019-04-16 | 2021-12-14 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 |
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JP5170859B2 (ja) * | 2007-03-29 | 2013-03-27 | 古河電気工業株式会社 | 基板及びその製造方法 |
JP5217245B2 (ja) * | 2007-05-23 | 2013-06-19 | 株式会社Sumco | シリコン単結晶ウェーハ及びその製造方法 |
US20080292523A1 (en) * | 2007-05-23 | 2008-11-27 | Sumco Corporation | Silicon single crystal wafer and the production method |
JP5262021B2 (ja) * | 2007-08-22 | 2013-08-14 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
WO2009151077A1 (ja) * | 2008-06-10 | 2009-12-17 | 株式会社Sumco | シリコン単結晶ウェーハの製造方法およびシリコン単結晶ウェーハ |
JP2010199411A (ja) * | 2009-02-26 | 2010-09-09 | Covalent Materials Corp | シリコンウェーハの熱処理方法 |
EP2722423B1 (en) * | 2009-03-25 | 2017-01-11 | Sumco Corporation | Method of manufacturing a silicon wafer |
JP5441261B2 (ja) * | 2010-02-17 | 2014-03-12 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP5550180B2 (ja) * | 2010-06-30 | 2014-07-16 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
WO2012117711A1 (ja) * | 2011-02-28 | 2012-09-07 | パナソニック株式会社 | 赤外発光素子の製造方法 |
CN102605433A (zh) * | 2012-01-09 | 2012-07-25 | 浙江大学 | 一种消除掺氮直拉单晶硅片中原生氧沉淀的方法 |
US9945048B2 (en) * | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
DE102012214085B4 (de) * | 2012-08-08 | 2016-07-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
US9029243B2 (en) * | 2012-10-08 | 2015-05-12 | Infineon Technologies Ag | Method for producing a semiconductor device and field-effect semiconductor device |
DE102014208815B4 (de) * | 2014-05-09 | 2018-06-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium |
US9425063B2 (en) * | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
US10026816B2 (en) * | 2015-03-30 | 2018-07-17 | Infineon Technologies Ag | Semiconductor wafer and manufacturing method |
JP6704781B2 (ja) | 2016-04-27 | 2020-06-03 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
JP6716344B2 (ja) * | 2016-06-01 | 2020-07-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP6299835B1 (ja) * | 2016-10-07 | 2018-03-28 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法 |
WO2018125565A1 (en) | 2016-12-28 | 2018-07-05 | Sunedison Semiconductor Limited | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield |
US10020203B1 (en) * | 2017-01-06 | 2018-07-10 | Sumco Corporation | Epitaxial silicon wafer |
DE102017219255A1 (de) * | 2017-10-26 | 2019-05-02 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium |
JP6897598B2 (ja) * | 2018-02-16 | 2021-06-30 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
KR102562239B1 (ko) | 2018-04-27 | 2023-07-31 | 글로벌웨이퍼스 씨오., 엘티디. | 반도체 도너 기판으로부터의 층 전이를 용이하게 하는 광 지원형 소판 형성 |
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JP7173082B2 (ja) * | 2020-04-17 | 2022-11-16 | 信越半導体株式会社 | 気相成長用のシリコン単結晶基板、気相成長基板及びこれらの製造方法 |
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JP4055343B2 (ja) * | 2000-09-26 | 2008-03-05 | 株式会社Sumco | シリコン半導体基板の熱処理方法 |
TW541581B (en) * | 2001-04-20 | 2003-07-11 | Memc Electronic Materials | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
JP2003007711A (ja) * | 2001-06-27 | 2003-01-10 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハ |
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-
2004
- 2004-04-23 JP JP2004128841A patent/JP4794137B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-14 TW TW094107680A patent/TWI261299B/zh active
- 2005-04-22 DE DE112005000863.0T patent/DE112005000863B4/de active Active
- 2005-04-22 WO PCT/JP2005/007716 patent/WO2005104208A1/ja active Application Filing
- 2005-04-22 CN CN2005800118820A patent/CN1943022B/zh active Active
- 2005-04-22 US US11/578,814 patent/US7759227B2/en active Active
Cited By (2)
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KR20210151814A (ko) | 2019-04-16 | 2021-12-14 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 웨이퍼의 제조방법 및 실리콘 단결정 웨이퍼 |
US11959191B2 (en) | 2019-04-16 | 2024-04-16 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon single crystal wafer and silicon single crystal wafer |
Also Published As
Publication number | Publication date |
---|---|
US7759227B2 (en) | 2010-07-20 |
WO2005104208A1 (ja) | 2005-11-03 |
DE112005000863T5 (de) | 2007-03-15 |
JP2005311200A (ja) | 2005-11-04 |
US20070252239A1 (en) | 2007-11-01 |
CN1943022A (zh) | 2007-04-04 |
CN1943022B (zh) | 2010-12-22 |
TWI261299B (en) | 2006-09-01 |
TW200535965A (en) | 2005-11-01 |
DE112005000863B4 (de) | 2020-04-09 |
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