CN1115425C - 用于半导体处理的气体注射系统 - Google Patents
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Abstract
一种用于向一半导体处理室(12)中注射气态物质的系统(10)。注射系统(10)包括至少一个形成于封闭空间主体(52)内的封闭空间(42)和多个喷嘴(34),它们和每个封闭空间相连接,用于从封闭空间(42)向室(12)注射气态物质。一管道结构沿着一迂回通道从封闭空间(42)向喷嘴(34)输送气态物质。喷嘴(34)被定位和构造成在晶片(22)整个表面上提供均匀的气体物质分布。
Description
技术领域
本发明大致涉及用于分布气态物质的系统,更具体地说,涉及用于半导体处理的气体注射系统。
背景技术
半导体晶片的处理典型地是通过将晶片放在室中,然后向晶片表面暴露于各种化学物质来完成的。物质的化学性能取决于所用处理的类型以及形成于半导体晶片表面上的器件的特性。化学物质一般地是以气态形式或者与载体气体一起被输送到室中。经过几个工序以后,使用高强度等离子体,可使形成于晶片表面的各膜层得到增强。
用于向室中提供化学物质的气体分布装置典型地包括:一封闭空间,它和气体供应入口连接;和多个喷嘴,用于从封闭空间向室中注射气体。典型地,封闭空间的背压在气体供应入口的注射点附近最高。结果,最靠近注射点的喷嘴提供的气体的流率比远离供应入口的喷嘴所提供的气体的流率高。为了优化膜质量,最好,气本分布装置在晶片整个表面上提供基本均匀的气体分布。分布装置可以用较少、较小的喷嘴,放在供应入口附近,以减少从供应入口附近进入封闭空间的气体量。为了使从封闭空间进入室中的气体获得较大的均匀性,有些气体分布装置包括一折流板,它将封闭空间分成两个室,从而在气体到达喷嘴之前,在整个封闭空间中获得更加均匀的气体分布。虽然,封闭空间中气体分布得到改进,但是,折流板的增加又会增加装置的成本和复杂程序,需要使用另外的密封。最好使用能提供基本均匀的气体供应又不需使用折流板或扩散板的气体分布装置。
可获得的气体分布装置的喷嘴典型地被构造成总体上朝晶片的方向注射气态物质。随着集成电路的复杂程度和封装密度的增加,形成于晶片表面的膜的均匀性变得越来越重要。在晶片表面径向的成膜速度取决于气体流率和喷嘴相对于晶片表面所在区域的位置和方向等因素。最好有一种气体分布装置,其喷嘴被布置来在晶片表面形成基本均匀的膜层。
在提供均匀的气体分布和控制进入室中的气体物质的流动方面,喷嘴的设计起着重要作用。对于等离子增强化学气相沉积工艺,最好用高流率来减少完成处理所需的时间。最好使用能提供气体物质的次声速、声速和超声速流率的喷嘴。
发明内容
本发明的主要目的是提供一种气体注射系统,用于向一处理室中输送气态物质。
本发明的另一目的是提供一种气体注射系统,用于以一均匀流率向一处理室中输送气态物质。
本发明的另一目的是提供一种气体注射系统,其整个封闭空间中具有一基本均匀的背压。
本发明的另一目的是提供一种气体注射系统,它提供一基本均匀的气体分布。
本发明的另一目的是提供一种气体注射系统,用于在晶片表面上形成一具有基本均匀分布的膜。
本发明的另一目的是提供一种喷嘴,它特别适合于高密度等离子增强沉积工艺。
本发明总的目的是提供一种可以有效且经济地制造、安装和维修的气体注射系统。
总之,本发明提供一种用于向一半导体处理室中输送气态物质的气体注射系统,包括:一封闭空间主体,其可安装在处理室中并且其中形成至少一个封闭空间,所述封闭空间包括至少一个供应入口,以向所述封闭空间输送气态物质;多个喷嘴,用于向所述处理室中注射所述气态物质,所述喷嘴和所述封闭空间隔开;和多个迂回管道,每个管道延伸于所述封闭空间和至少一个所述喷嘴之间,用于沿着一迂回通道从所述封闭空间向至少一个所述喷嘴输送气体物质,所述迂回管道导引所述气态物质流至至少两个不同的流动方向,以干扰所述气态物质在所述封闭空间和所述至少一个所述喷嘴之间的流动,使得所述气态物质从所述封闭空间到所述至少一个所述喷嘴均匀传输,而不依赖于所述至少一个所述喷嘴相对于所述供应入口的位置。
最好是,所述迂回管道至少包括一个第一延伸段和一个第二延伸段,所述第一延伸段从所述封闭空间在第一方向延伸,所述第二延伸段从所述第一延伸段在第二方向延伸,该第二方向相对于第一方向成一倾斜角度。优选地,所述第二延伸段基本上垂直于所述第一延伸段。
最好是,每个所述迂回管道包括至少一个弯段,用于在所述气态物质从所述封闭空间输送到所述至少一个所述喷嘴之前改变所述气态物质的流动方向。
最好是,所述迂回管道的内径小于所述封闭空间的内径。
优选地,所述迂回管道具有一内横截面,该内横截面小于所述封闭空间的内横截面并大于所述喷嘴的内横截面的。
优选地,所述封闭空间主体安装在所述处理室中,处理室具有不大于4mTorr的工作气压。
优选地,所述封闭空间具有一环形结构。
优选地,所述封闭空间主体中形成有一第二封闭空间,还包括多个第二喷嘴,它们与所述第二封闭空间连接,用于向所述室中输送一第二气态物质。
优选地,所述第一喷嘴被取向为大致按一第一方向注射所述气态物质,所述第二喷嘴被取向来大致按不同于所述第一方向的一第二方向注射所述第二气态物质。更优选地,所述第一喷嘴形成一第一注射平面,所述第二喷嘴形成一与所述第一平面分开的第二注射平面。
优选地,所述封闭空间主体中形成有多个封闭空间。
本发明另一方面提供一种用于向一半导体处理室中注射一气态物质的系统,包括:一封闭空间主体,其中形成有多个封闭空间,所述每个封闭空间都有一供应入口,用于向封闭空间中输送气态物质;多个第一喷嘴,和一个第一所述封闭空间连接,用于向所述处理室中注射所述气态物质,所述多个第一喷嘴被取向为相对于一水平面成一第一角度,以将提供到所述第一封闭空间的所述气态物质朝向位于与所述多个第一喷嘴相同侧的基片的边缘注射;以及多个第二喷嘴,其与一第二所述封闭空间连接,用于向所述处理室中注射所述气态物质,所述多个第二喷嘴被取向为相对于水平面成一第二角度,以将提供到所述第二封闭空间的所述气态物质从所述多个第二喷嘴朝向位于处理室相反侧的基片的边缘注射。
优选地,所述的系统还包括迂回管道,它延伸于至少一个所述封闭空间和与之相连的一个所述喷嘴之间,所述迂回管道形成一迂回通道,用于从至少一个所述封闭空间向至少一个相应的所述喷嘴输送所述气态物质,所述迂回管道导引所述气态物质流至至少两个不同的流动方向,以干扰所述气态物质在所述封闭空间和所述至少一个所述喷嘴之间的流动,使得所述气态物质从所述封闭空间到所述至少一个所述喷嘴均匀传输,而不依赖于所述至少一个所述喷嘴相对于所述供应入口的位置。
优选地,所述迂回管道包括至少两个管道段,它们延伸于至少一个所述封闭空间和至少一个相应的所述喷嘴之间,每个所述管道段和其相邻的管道段之间成一定角度。
优选地,所述迂回管道的内径小于至少一个所述封闭空间的内径。
优选地,所述迂回管道至少包括一弯段,用于在将所述气态物质从所述封闭空间输送到所述至少一个喷嘴之前,改变气态物质的流动方向。
优选地,所述第一所述封闭空间和所述第二所述封闭空间的每个封闭空间都和一硅烷和氩气源连接;并且所述封闭空间主体包括一第三封闭空间,它和一氧气源连接。
优选地,一个所述封闭空间和一第一源连接,另一个所述封闭空间和一第二源连接,所述第一源和所述第二源以不同的流率提供所述气态物质。
本发明再一方面提供一种用于向半导体处理室中输送气态物质的气体注射系统,包括:一个封闭空间主体,其可安装于处理室中,并且其中形成有至少一个封闭空间,所述封闭空间包括至少一个供应入口,用于向所述封闭空间输送气态物质;多个喷嘴,用于将所述气态物质注射到处理室中,所述各个喷嘴与所述封闭空间隔开;和多个迂回管道,延伸于所述封闭空间和所述喷嘴之间,用于沿着一迂回通道输送所述气体物质,所述迂回通道构造成能干扰所述气态物质的流动,使得所述气态物质均匀地分布到所述喷嘴,而不依赖于所述喷嘴相对于所述供应入口的位置,所述迂回管道至少包括一个第一延伸段和第二延伸段,所述第一延伸段从所述封闭空间在第一方向延伸,所述第二延伸段从所述第一延伸段在第二方向延伸,该第二方向相对于第一方向成一倾斜角度。
优选地,所述第二延伸段基本上垂直于所述第一延伸段。
优选地,所述第一和第二延伸段的内横截面大于所述喷嘴的内横截面。
优选地,所述封闭空间主体安装在所述处理室中,处理室具有不大于4mTorr的工作气压。
附图的简要说明
参考附图,通过下面的详细说明和所附权利要求书,可以更好地理解本发明的其它目的和特征。附图中:
图1是根据本发明的气体注射系统的示意性透视及局部剖视图,图中示出的是安装在一等离子增强化学气相沉积系统中的一种气体注射系统;
图2是根据本发明的气体注射系统的剖视示意图;
图3是图2所示气体注射系统的主封闭空间的顶视平面示意图;
图4是图1所示气体注射系统的剖视图;
图5是本发明气体注射系统的剖视示意图;
图6A-C是在成膜过程中半导体晶片上膜轮廓的局部放大示意图;
图7A-C是本发明的喷嘴轮廓的局部剖视放大图。
优选实施方式的详细描述
现在参考附图中所示的本发明优选实施例进行详述在所有附图中,相同的部件用相同的参考标号来表示,如图1所示。
图1示出了一气体注射组件10,它特别适合于向处理系统14的室12中输送气态物质。处理系统14用于等离子增强化学气相沉积处理,当然可以理解,注射组件10也可以和处理晶片的其它工艺一起使用,这些工艺包括:化学气相沉积;蚀刻;高温薄膜沉积等,但也不局限于上述工艺。处理系统14总体上包括一室壁16和一包围室12的顶板18。一支撑组件20在室12中支撑晶片22,以便对晶片进行处理。在优选实施例中,支撑组件20是共同待审申请No.08/500480中介绍的静电夹持组件,这里引用来作为参考。然而,如果需要的话,也可以使用其它类型的支撑系统,如一机械夹盘。一等离子源24固定到顶板18上,它大致上和晶片22轴对准,产生等离子,以增强晶片22的处理。等离子源24在共同待审的申请NO.08/500,493中作了详细介绍,这里引用作为参考。一真空系统(未显示)用来使室12排成真空。正如本领域的技术人员所知道的那样,真空系统一般包括一真空泵(未显示),它通过一接口(未显示)工作连接(operativelycoupled)到室12上。正如申请No.08/500,493中所介绍的,真空泵大致与室12轴对准,以改进对气体和等离子的流动控制。另外,正如本领域的技术人员所知道的那样,真空泵可以放在室12的侧面。
气体注射组件10固定到顶板18下面的室壁16上。在本发明的实施例中,注射组件有一环形结构,系统的外周表面30固定到室壁上,其内表面32形成一贯穿注射组件的中心孔。多个喷嘴34向处理室中喷射气体,使气态物质从注射组件向室的中心轴流动。气体注射组件的环形结构使气体围绕室的周边均匀分布,同时,在等离子源24和晶片22之间提供一通道。将注射组件10和等离子流分开,还可以实现对等离子密度和气态物质流动的单独控制。如图1中箭头所示,等离子源24产生的等离子和气态物质的活性物质(active species)向下运动到位于注射组件10、室壁16和支撑系统20之间形成的射频场内的晶片表面上,在晶片上沉积一层膜。
尽管气体注射组件10的环形结构是优选的,必须知道的是也可以使用本发明范畴内的其它结构。例如,如果需要的话,注射组件可以是矩形或椭圆形结构。如果需要的话,可以使用一个或多个弧形注射装置来替代一个在室周边连续延伸的注射组件。
本发明的气体注射组件10提供了对沉积在晶片表面的膜的切向轮廓(晶片周边的厚度)和径向轮廓(晶片径向厚度)的优化控制。当气体通过喷嘴34以不同的流率进行注射时,可以得到切向轮廓的各种变化。散射角α(图4)和相对于水平面的注射角β(图5)导致径向轮廓的变化。本发明的组件10可以用来优化膜的切向和径向轮廓的均匀性。
下面将参考图2-3讨论对切向轮廓的控制。气体注射系统10一般包括至少一主封闭空间42,它通过入口44和供应线45与气体源46连接。主封闭空间42通过一管道结构(图2中用48来表示)与喷嘴34连接,它可以构造成来平衡封闭空间的背压,从而使喷嘴34以基本均匀的流率向室12中注射气体。正如图2中示例所示,管道结构48在主封闭空间42和喷嘴34之间形成一迂回通道,故管道结构48也称为迂回管道。最好,管道结构48包括多个独立的通道50,它从主封闭空间延伸到喷嘴。在该实施例中,每个喷嘴34有一独立的通道50,尽管(如果需要的话)同一通道可以连接一个或多个喷嘴和主封闭空间42。每个通道的截面积小于封闭空间的横截面积,封闭空间的截面积最好小于喷嘴34的截面积总和的1000倍。
如图2和3中的箭头所示,在主封闭空间中,气体流动的速度矢量在气体到达喷嘴34之前从其初始流动方向开始,至少改变两次方向。最好,管道结构48的结构可以使气体流动方向发生急剧变化,如图2中的直角所示。具体应用时所需的方向改变的程度将随通道间的角度、通道直径和通道长度等因素的变化而变化。在本发明的优选实施例中,通道的规格和气体分子的平均自由程有关,使通道直径小于平均自由程,通道长度为平均自由程的2至3倍的数量级。应当理解,管道结构48所形成的实际通道可以有相当多的变型。
利用管道结构48将喷嘴34和主封闭空间42的流动通道分开,可以允许主封闭空间42的背压在气体流动到喷嘴之前达到平衡。由于封闭空间和喷嘴34之间的迂回通道的存在以及通道50相对于主封闭空间的截面积的减小,使气体基本上通过扩散从主封闭空间输送到喷嘴。结果,气体可以方便地到达一选定的注射点,而且与注射点相对于入口44的位置无关。每个喷嘴34以一基本均匀的流率向室中喷射气体,所以,明显减少了膜沉积的切向轮廓的变化。
下面将参考图4详细介绍气体注射组件10,如图4所示,注射组件10一般包括一封闭空间主体52,主封闭空间42形成于其中。在封闭空间主体52中形成有两个封闭空间42a和42b。尽管可以理解在本发明中可以使用任意数量的封闭空间。对于高密度等离子增强化学气相沉积工艺,封闭空间42a最好与一硅烷和氩气源连接,而封闭空间42b最好与一氧气源连接。一气体供应通道55在供应线和入口44之间延伸,以向封闭空间提供气体物质。在实施例中,供应线55基本上是水平的,尽管应当理解,供应线还可以垂直于封闭空间42或与封闭空间成一角度。可以使用一个或多个供应线55来向封闭空间输送气体物质。使用管道结构48,一个供应线将在封闭空间42中提供一基本均匀的气体分布。
通道50包括:一第一延伸段56,它形成于封闭空间主体52上向下伸出部58内;和一第二延伸段60,它终止于安装到封闭空间主体的向下伸出部58上的多个分离的且沿周向彼此分开的指状物62。使用合适的紧固元件将指状物62固定到封闭空间主体52上。例如,指状物62可以压配到或拧入形成于封闭空间主体52内的孔中。封闭空间主体52和指状物62之间的协同配合可以最大程度降低或基本上避免封闭空间主体和指状物62之间的泄漏。如果需要的话,可以将主体52和指状物62之间的连接密封起来。在该实施例中,第一和第二延伸段56和60是相互垂直的,其中,第一延伸段56为基本上是垂直方向,第二延伸段60基本上是水平方向。然而,在本发明范畴内,延伸段56和60之间的相对方位可以有一定的变化。第二延伸段60终止于喷嘴34。
本发明的管道结构48的结构具有特别的优点。封闭空间主体52的最小内径是由内表面32限定的。向下延伸部58可以基本上与内表面32轴对准或朝表面32向外隔开。向下延伸部最好朝内表面32向外间隔开,以增加支撑组件20周围的敞开面积。如图1所示,在本发明的实施例中,向下延伸部沿室12的周边连续延伸。延伸部58不会明显干涉气体流动,因为它不会伸到封闭空间主体52轮廓的外面。然而,如果需要的话,向下延伸部58可以用多个向下延伸的指状物来替代,从而进一步增加支撑组件20周围的敞开面积。
指状物62允许喷嘴34位于靠近支撑组件20的附近,而不会明显干涉气体和等离子体经过室的流动,从而提高处理操作的效率。当真空泵和室12轴对准时,各指状物62最好沿周向彼此分开,从而维持支撑组件20周围气体对称流动。然而,应当理解,指状物62的实际位置可以有多种变型。
在本发明的实施例中,封闭空间主体52包括:一外部64,它支撑于室壁16的水平延伸突出部分65上;和一可移动内部66。内部66通过合适的紧固元件(如一螺纹紧固件67)紧固到外部上。最好,多个紧固元件沿封闭空间主体52的周向彼此分开。外部64和内部66的配合表面协同成形,以形成封闭空间52。多个密封元件68压在封闭空间主体52的内部和外部之间,以隔离封闭空间,从而,防止封闭空间之间以及封闭空间和室12之间的气体泄漏。应当理解,封闭空间主体52的结构可以有多种变化,而不局限于图4所示的结构。
通过对喷嘴数目、喷嘴34相对于晶片的位置、实际注射点和注射方向等因素进行修改,可以获得理想的膜均匀性,膜的成分,气体用量(实际到达晶片表面的提供的化学物质量)和晶片表面轮廓。可以对上面四个因素当中的每个因素进行适当变化,同时考虑其真空压力、气体种类和离子能量,从而得到理想的结果。
每个喷嘴相对于晶片的位置是通过喷嘴和晶片的轴的径向矩离r(图5);喷嘴在晶片平面上的高度z(图5);和喷嘴在晶片周向的角位置θ(图3)来确定的。在实际操作过程中,注射的气体散射位置(这里指实际注射点)和喷嘴的注射点不同。注射的气体在散射之前从喷嘴34行进的距离基本上是由在操作压力下气体种类的平均自由程确定的。在约2毫乇(mTorr)的压力下,分子重量约为30的分子(如硅烷和氧气)的平均自由程约为2.5cm。最好,喷嘴34的实际位置,选择在使每个喷嘴的实际注射点处于相对于晶片的理想位置上。图4和图5示出了注射组件10的一优选实施例,它特别适合于沉积二氧化硅膜。喷射组件包括十二至三十六个喷嘴34。喷嘴位于晶片平面之上约2cm至5cm,距晶片的外边缘约2cm至4cm,使实际注射点位于相对晶片表面的理想位置上。使用在2mTorr气压下平均自由程约为2.5cm的硅烷和氧化,当确定喷嘴的位置时,实际注射的位置是一要考虑的重要变量。
注射矢量是由喷嘴34的位置(或,更具体地说是指实际注射点的位置)和相对于水平面的注射角β来确定的。角度β可能为零,此时,气体沿基本平行于晶片表面的方向注射。可以选择角度β使气流到达晶片的指定部位。可以通过确定各个喷嘴的方位,以提供不同的注射角度β,从而得到理想的膜轮廓。例如,某些喷嘴的注射矢量基本指向晶片的近侧,而其它喷嘴的注射矢量基本指向晶片的远侧。
如图5简单示出的,气体注射组件10包括三个封闭空间42a,42b和42c,每个封闭空间和一独立的气体源46连接。对于高密度等离子增强化学气相沉积,第一和第三封闭空间42a和42c和一氩气和硅烷源连接,而第二封闭空间42b和一氧气源连接。然而,可以根据室12中所采取的处理,使用各种其它的气体物质。可以使用两个或多个封闭空间42来提高在沉积膜的径向轮廓以及成膜速率控制方面的适应性。气体可以用不同的速率提供给选定的喷嘴。与第一封闭空间42a相连的喷嘴34a基本指向离喷嘴34最近的晶片区域。从喷嘴34a提供的处理气体基本上产生图6A所示的晶片轮廓;使沿着晶片边缘的膜大于晶片中央膜的厚度。与第三封闭空间42c相连的喷嘴34c指向喷嘴34c对面的晶片边缘,产生图6B所示的晶片轮廓,其晶片中央的厚度大于沿晶片边缘的膜的厚度。最好,喷嘴34c所用流率大于喷嘴34a的流率。与第二封闭空间42b相连的一些喷嘴34b指向晶片的近边,而其它的则指向晶片的远边,通过在处理时,同时操作喷嘴34a,34b和34c,可以得到如图6C所示具有基本均匀厚度的膜。所以,可以使用单独的封闭空间42a和42c以及喷嘴34a和34c的方位来明显改进膜的径向轮廓的均匀性。
图7Aa-7C示出了喷嘴的示例,它们可以用于注射系统10中,喷嘴34一般包括:一入口70;一出口72和一内壁74,内壁74延伸于入口70和出口72之间。在喷嘴的截面积最小处,获得通过喷嘴的最大气体流率。图7A示出了一传统的轮廓,其中,喷嘴34的截面积是一定值。在示出的实施例中,圆柱形喷嘴的内径约为0.2mm至0.3mm。气体加速发生在入口70处,喷嘴的内壁74限制着气体经过喷嘴的流动。这种喷嘴所能得到的最大速度一般小于气体物质的声速。
图7B示出了锥形喷嘴轮廓,其中,喷嘴34在出口72处的截面积最小。在本实施例中,入口70的直径约为1.4mm至1.6mm,出口72的直径约为0.2mm至0.3mm。当气体在喷嘴中行进时,流率密度逐渐增加,在出口74处达到最大。喷嘴所能获得的流率可以达到气体物质的声速。
图7C示出了一优选的喷嘴轮廓。喷嘴34的最小截面位于入口70和出口72之间。在本发明的一实施例中,入口和出口的直径约为0.5mm至0.7mm,喷嘴最小直径约为0.2mm至0.3mm。图7C所示的喷嘴允许选择散射角,以将气体集中喷射到晶片表面上。
本发明的注射系统10根据使用场合和所需的沉积速度可以和次声速喷嘴、声速喷嘴或超声速喷嘴一起使用。对于等离子增强化学气相沉积工艺,图7C所示的喷嘴轮廓可以对气体物质经过喷嘴的流率进行较大的控制,可以使气体流率达到次声速,也可以达到超声速。使用图7B所示的轮廓,沉积的速度受气体的声速限制。通过将气体流率增加到超声速流率,沉积处理的速度明显增加。对于操作压力低于3-4mTorr的高密度等离子增强工艺,能获得超声速流率非常有利。对等离子增强工艺,能获得理想的散射角α也特别有利。
上面已对本发明的具体实施例进行了介绍,它们仅作为示例性的,而不是本发明就局限于这几种形式,很明显,根据上面的教导,可以进行各种修改和变化。选择实施例进行介绍是为了更好地解释本发明的原理及其具体应用,从而使本领域的技术人员可以更好地使用本发明以及为了提供一些适合于具体应用场合的各种修改的实施例。本发明的发明范畴由后面所附的权利要求书和其同等物规定。
Claims (23)
1.一种用于向一半导体处理室中输送气态物质的气体注射系统,包括:
一封闭空间主体,其可安装在处理室中并且其中形成至少一个封闭空间,所述封闭空间包括至少一个供应入口,以向所述封闭空间输送气态物质;
多个喷嘴,用于向所述处理室中注射所述气态物质,所述喷嘴和所述封闭空间隔开;和
多个迂回管道,每个管道延伸于所述封闭空间和至少一个所述喷嘴之间,用于沿着一迂回通道从所述封闭空间向至少一个所述喷嘴输送气体物质,所述迂回管道导引所述气态物质流至至少两个不同的流动方向,以干扰所述气态物质在所述封闭空间和所述至少一个所述喷嘴之间的流动,使得所述气态物质从所述封闭空间到所述至少一个所述喷嘴均匀传输,而不依赖于所述至少一个所述喷嘴相对于所述供应入口的位置。
2.如权利要求1所述的气体注射系统,其中,所述迂回管道至少包括一个第一延伸段和一个第二延伸段,所述第一延伸段从所述封闭空间在第一方向延伸,所述第二延伸段从所述第一延伸段在第二方向延伸,该第二方向相对于第一方向成一倾斜角度。
3.如权利要求1所述的气体注射系统,其中,每个所述迂回管道包括至少一个弯段,用于在所述气态物质从所述封闭空间输送到所述至少一个所述喷嘴之前改变所述气态物质的流动方向。
4.如权利要求1所述的气体注射系统,其中,所述迂回管道的内径小于所述封闭空间的内径。
5.如权利要求2所述的气体注射系统,其中,所述第二延伸段基本上垂直于所述第一延伸段。
6.如权利要求1所述的气体注射系统,其中,所述迂回管道具有一内横截面,该内横截面小于所述封闭空间的内横截面并大于所述喷嘴的内横截面的。
7.如权利要求1所述的气体注射系统,其中,所述封闭空间主体安装在所述处理室中,处理室具有不大于4mTorr的工作气压。
8.如权利要求1所述的气体注射系统,其中,所述封闭空间具有一环形结构。
9.如权利要求1所述的气体注射系统,其中,所述封闭空间主体中形成有一第二封闭空间,还包括多个第二喷嘴,它们与所述第二封闭空间连接,用于向所述室中输送一第二气态物质。
10.如权利要求9所述的气体注射系统,其中,所述第一喷嘴被取向为按一第一方向注射所述气态物质,所述第二喷嘴被取向来按不同于所述第一方向的一第二方向注射所述第二气态物质。
11.如权利要求9所述的气体注射系统,其中,所述第一喷嘴形成一第一注射平面,所述第二喷嘴形成一与所述第一平面分开的第二注射平面。
12.如权利要求1所述的气体注射系统,其中,所述封闭空间主体中形成有多个封闭空间。
13.一种用于向一半导体处理室中注射一气态物质的系统,包括:
一封闭空间主体,其中形成有多个封闭空间,所述每个封闭空间都有一供应入口,用于向封闭空间中输送气态物质;
多个第一喷嘴,和一个第一所述封闭空间连接,用于向所述处理室中注射所述气态物质,所述多个第一喷嘴被取向为相对于一水平面成一第一角度,以将提供到所述第一封闭空间的所述气态物质朝向位于与所述多个第一喷嘴相同侧的基片的边缘注射;以及
多个第二喷嘴,其与一第二所述封闭空间连接,用于向所述处理室中注射所述气态物质,所述多个第二喷嘴被取向为相对于水平面成一第二角度,以将提供到所述第二封闭空间的所述气态物质从所述多个第二喷嘴朝向位于处理室相反侧的基片的边缘注射。
14.如权利要求13所述的系统,还包括迂回管道,它延伸于至少一个所述封闭空间和与之相连的一个所述喷嘴之间,所述迂回管道形成一迂回通道,用于从至少一个所述封闭空间向至少一个相应的所述喷嘴输送所述气态物质,所述迂回管道导引所述气态物质流至至少两个不同的流动方向,以干扰所述气态物质在所述封闭空间和所述至少一个所述喷嘴之间的流动,使得所述气态物质从所述封闭空间到所述至少一个所述喷嘴均匀传输,而不依赖于所述至少一个所述喷嘴相对于所述供应入口的位置。
15.如权利要求14所述的系统,其中,所述迂回管道包括至少两个管道段,它们延伸于至少一个所述封闭空间和至少一个相应的所述喷嘴之间,每个所述管道段和其相邻的管道段之间成一定角度。
16.如权利要求14所述的系统,其中,所述迂回管道的内径小于至少一个所述封闭空间的内径。
17.如权利要求14所述的系统,其中,所述迂回管道至少包括一弯段,用于在将所述气态物质从所述封闭空间输送到所述至少一个喷嘴之前,改变气态物质的流动方向。
18.如权利要求13所述的系统,其中,所述第一所述封闭空间和所述第二所述封闭空间的每个封闭空间都和一硅烷和氩气源连接;并且所述封闭空间主体包括一第三封闭空间,它和一氧气源连接。
19 如权利要求13所述的系统,其中,一个所述封闭空间和一第一源连接,另一个所述封闭空间和一第二源连接,所述第一源和所述第二源以不同的流率提供所述气态物质。
20.一种用于向半导体处理室中输送气态物质的气体注射系统,包括:
一个封闭空间主体,其可安装于处理室中,并且其中形成有至少一个封闭空间,所述封闭空间包括至少一个供应入口,用于向所述封闭空间输送气态物质;
多个喷嘴,用于将所述气态物质注射到处理室中,所述各个喷嘴与所述封闭空间隔开;和
多个迂回管道,延伸于所述封闭空间和所述喷嘴之间,用于沿着一迂回通道输送所述气体物质,所述迂回通道构造成能干扰所述气态物质的流动,使得所述气态物质均匀地分布到所述喷嘴,而不依赖于所述喷嘴相对于所述供应入口的位置,所述迂回管道至少包括一个第一延伸段和第二延伸段,所述第一延伸段从所述封闭空间在第一方向延伸,所述第二延伸段从第一延伸段在第二方向延伸,该第二方向相对于第一方向成一倾斜角度。
21.如权利要求20所述的气体注射系统,其中,所述第二延伸段基本上垂直于所述第一延伸段。
22.如权利要求20所述的气体注射系统,其中,所述第一和第二延伸段的内横截面大于所述喷嘴的内横截面。
23.如权利要求20所述的气体注射系统,其中,所述封闭空间主体安装在所述处理室中,处理室具有不大于4mTorr的工作气压。
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Also Published As
Publication number | Publication date |
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KR19990066993A (ko) | 1999-08-16 |
ATE275213T1 (de) | 2004-09-15 |
WO1997015698A1 (en) | 1997-05-01 |
DE69633295D1 (de) | 2004-10-07 |
EP0870072A4 (en) | 2002-05-02 |
KR100434749B1 (ko) | 2004-11-06 |
JPH11514499A (ja) | 1999-12-07 |
TW356554B (en) | 1999-04-21 |
US5851294A (en) | 1998-12-22 |
AU7450596A (en) | 1997-05-15 |
EP0870072A1 (en) | 1998-10-14 |
EP0870072B1 (en) | 2004-09-01 |
HK1015420A1 (en) | 1999-10-15 |
CN1200773A (zh) | 1998-12-02 |
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