JPS54111771A - Gas phase reaction unit of semiconductor substrate - Google Patents

Gas phase reaction unit of semiconductor substrate

Info

Publication number
JPS54111771A
JPS54111771A JP1855178A JP1855178A JPS54111771A JP S54111771 A JPS54111771 A JP S54111771A JP 1855178 A JP1855178 A JP 1855178A JP 1855178 A JP1855178 A JP 1855178A JP S54111771 A JPS54111771 A JP S54111771A
Authority
JP
Japan
Prior art keywords
gas
substrate
stand
cover
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1855178A
Other languages
Japanese (ja)
Inventor
Shoichi Kitane
Yukiya Takezaki
Susumu Nishiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1855178A priority Critical patent/JPS54111771A/en
Publication of JPS54111771A publication Critical patent/JPS54111771A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)

Abstract

PURPOSE:To perform uniform gas phase reaction, by heating the substrate stand with the disc heater, and jetting the reaction gas from the center top of the reaction package cover having concave inner surface and carrier gas along the inner wall from the upper part of cover. CONSTITUTION:The substrate stand 13 is uniformly heated with the heater 12 located on the concentric circle, and the Si substrate 1 is placed. The reaction gas inlet 14 passes through the upper part of the cover and gas is jetted 14b upward from the circular part 14a surrounding the vent tube 17. Carrier gas is jetted from a plurality of het outlets 16 at the lower part of the cover, producing the circular movement in the plane in parallel with the stand 13 along the inner wall of the package with mixed gas. The mixed gas is absorbed and discharged at the upper center of the substrate 1 group on the stand 13. When the heater terminal having greater thermal loss is placed at the center of the concentric circle, since this part corresponds to the discharge region such as substrate contamination gas concentration lowering, it is covenient because of absence of the substrate. Thus, uniform gas phase reaction can be executed.
JP1855178A 1978-02-22 1978-02-22 Gas phase reaction unit of semiconductor substrate Pending JPS54111771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1855178A JPS54111771A (en) 1978-02-22 1978-02-22 Gas phase reaction unit of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1855178A JPS54111771A (en) 1978-02-22 1978-02-22 Gas phase reaction unit of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS54111771A true JPS54111771A (en) 1979-09-01

Family

ID=11974758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1855178A Pending JPS54111771A (en) 1978-02-22 1978-02-22 Gas phase reaction unit of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS54111771A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492852A (en) * 1983-02-11 1985-01-08 At&T Bell Laboratories Growth substrate heating arrangement for UHV silicon MBE
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
WO1997015698A1 (en) * 1995-10-23 1997-05-01 Watkins-Johnson Company Gas injection system for semiconductor processing
EP0807694A1 (en) * 1996-05-13 1997-11-19 Applied Materials, Inc. Deposition chamber and method for low dielectric constant film
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
WO2003048414A1 (en) * 2001-12-04 2003-06-12 Primaxx, Inc. Chemical vapor deposition reactor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492852A (en) * 1983-02-11 1985-01-08 At&T Bell Laboratories Growth substrate heating arrangement for UHV silicon MBE
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
WO1997015698A1 (en) * 1995-10-23 1997-05-01 Watkins-Johnson Company Gas injection system for semiconductor processing
US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
EP0807694A1 (en) * 1996-05-13 1997-11-19 Applied Materials, Inc. Deposition chamber and method for low dielectric constant film
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6416823B2 (en) 1996-05-13 2002-07-09 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6589610B2 (en) 1996-05-13 2003-07-08 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6833052B2 (en) 1996-05-13 2004-12-21 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US7413627B2 (en) 1996-05-13 2008-08-19 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
WO2003048414A1 (en) * 2001-12-04 2003-06-12 Primaxx, Inc. Chemical vapor deposition reactor

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