CN109637565B - 记忆胞 - Google Patents

记忆胞 Download PDF

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Publication number
CN109637565B
CN109637565B CN201811167356.9A CN201811167356A CN109637565B CN 109637565 B CN109637565 B CN 109637565B CN 201811167356 A CN201811167356 A CN 201811167356A CN 109637565 B CN109637565 B CN 109637565B
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transistor
voltage
memory cell
coupled
terminal
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CN109637565A (zh
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印秉宏
王佳祥
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Guangzhou Tyrafos Semiconductor Technologies Co Ltd
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Guangzhou Tyrafos Semiconductor Technologies Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/041—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/382—Information transfer, e.g. on bus using universal interface adapter
    • G06F13/385—Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G06F13/4291—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/00127—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
    • H04N1/00204—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
    • H04N1/00209—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
    • H04N1/00214—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/21—Intermediate information storage
    • H04N1/2104—Intermediate information storage for one or a few pictures
    • H04N1/2112—Intermediate information storage for one or a few pictures using still video cameras
    • H04N1/2137—Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/66—Remote control of cameras or camera parts, e.g. by remote control devices
    • H04N23/661—Transmitting camera control signals through networks, e.g. control via the Internet
    • H04N23/662—Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/71—Circuitry for evaluating the brightness variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/72—Combination of two or more compensation controls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/743—Bracketing, i.e. taking a series of images with varying exposure conditions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F2213/0002—Serial port, e.g. RS232C
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness
    • G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L67/00—Network arrangements or protocols for supporting network services or applications
    • H04L67/01—Protocols
    • H04L67/10—Protocols in which an application is distributed across nodes in the network
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2201/00—Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
    • H04N2201/0077—Types of the still picture apparatus
    • H04N2201/0084—Digital still camera
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

本发明提供一种记忆胞，其包括第一晶体管、反相器以及第二晶体管。第一晶体管的第一端用以做为记忆胞的数据输入端。第一晶体管的控制端接收写入控制信号。第一晶体管的第二端耦接记忆节点。反相器的输入端耦接记忆节点。反相器的输出端用以做为记忆胞的数据输出端。第二晶体管的第一端耦接第一电压。第二晶体管的控制端耦接反相器的输出端。第二晶体管的第二端耦接记忆节点。第二晶体管的基体耦接第二电压，其中第二电压的电压值不等于第一电压的电压值，以降低第二晶体管的漏电流。

Description

记忆胞
技术领域
本发明涉及一种记忆胞，尤其涉及一种可改善漏电流状况的记忆胞。
背景技术
在深次微米技术中，晶体管的漏电流(leakage)已成为一个非常关键且不可忽视的问题。特别是，在以晶体管所设计的记忆胞中，漏电流会造成其所储存的数据发生错误。因此，如何改善记忆胞的漏电流，是本领域技术人员所面临的重大课题之一。
发明内容
有鉴于此，本发明提供一种可改善漏电流状况的记忆胞。
本发明的记忆胞包括第一晶体管、反相器以及第二晶体管。第一晶体管的第一端用以做为记忆胞的数据输入端。第一晶体管的控制端接收写入控制信号。第一晶体管的第二端耦接记忆节点。反相器的输入端耦接记忆节点。反相器的输出端用以做为记忆胞的数据输出端。第二晶体管的第一端耦接第一电压。第二晶体管的控制端耦接反相器的输出端。第二晶体管的第二端耦接记忆节点。第二晶体管的基体耦接第二电压，其中第二电压的电压值不等于第一电压的电压值，以降低第二晶体管的漏电流。
在本发明的一实施例中，上述的第二晶体管为P型金氧半场效晶体管，第一电压与第二电压为正电压，且第二电压的电压值高于第一电压的电压值。
在本发明的一实施例中，上述的第一晶体管为N型金氧半场效晶体管，且第一晶体管的基体耦接负电压。
在本发明的一实施例中，上述的第一晶体管为P型金氧半场效晶体管，且第一晶体管的基体耦接第二电压。
在本发明的一实施例中，上述的第二晶体管为N型金氧半场效晶体管，第一电压为接地电压，且第二电压为负电压。
在本发明的一实施例中，上述的第一晶体管为P型金氧半场效晶体管，且第一晶体管的基体耦接第三电压，其中第三电压为正电压，且第三电压的电压值高于记忆胞的数据输入端的电压值。
基于上述，在本发明实施例所提出的记忆胞中，通过增加记忆胞的晶体管的基体效应，以降低晶体管与记忆节点之间的漏电流，可有效防止记忆节点所储存的数据发生错误。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附附图作详细说明如下。
附图说明
下面的所附附图是本发明的说明书的一部分，示出了本发明的示例实施例，所附附图与说明书的描述一起说明本发明的原理。
图1是依照本发明一实施例所示出的记忆胞的电路架构示意图。
图2是依照本发明另一实施例所示出的记忆胞的电路架构示意图。
图3是依照本发明又一实施例所示出的记忆胞的电路架构示意图。
图4是依照本发明又一实施例所示出的记忆胞的电路架构示意图。
【符号说明】
100、200、300、400：记忆胞
120：反相器
CS：写入控制信号
E_IN：数据输入端
E_OUT：数据输出端
MN1、MP1：第一晶体管
MP2、MN2：第二晶体管
SN：记忆节点
VN：负电压
VG、VP1：第一电压
VN2、VP2：第二电压
VP3：第三电压
具体实施方式
为了使本发明的内容可以被更容易明了，以下特举实施例做为本发明确实能够据以实施的范例。另外，凡可能之处，在附图及实施方式中使用相同标号的元件/构件，是代表相同或类似部件。
图1是依照本发明一实施例所示出的记忆胞的电路架构示意图。请参照图1，记忆胞100包括第一晶体管MN1、第二晶体管MP2以及反相器120。第一晶体管MN1的第一端用以做为记忆胞100的数据输入端E_IN，第一晶体管MN1的控制端接收写入控制信号CS，且第一晶体管MN1的第二端耦接记忆节点SN。其中可通过写入控制信号CS导通第一晶体管MN1，以将数据输入端E_IN的数据写入记忆节点SN，并在数据输入端E_IN的数据写入记忆节点SN之后，关断第一晶体管MN1，以将数据储存在记忆节点SN。
反相器120的输入端耦接记忆节点SN。反相器120的输出端用以做为记忆胞100的数据输出端E_OUT。第二晶体管MP2的第一端耦接第一电压VP1。第二晶体管MP2的控制端耦接反相器120的输出端。第二晶体管MP2的第二端耦接记忆节点SN。第二晶体管MP2的基体耦接第二电压VP2。特别是，为了降低第二晶体管MP2的漏电流，第二电压VP2的电压值不等于第一电压VP1的电压值。
详细来说，在图1所示的实施例中，第二晶体管MP2为P型金氧半场效晶体管，第一电压VP1与第二电压VP2皆为正电压，且第二电压VP2的电压值高于第一电压VP1的电压值。如此一来，可增加第二晶体管MP2的基体效应，以降低自第二晶体管MP2流入记忆节点SN的漏电流，从而防止记忆节点SN所储存的数据发生错误。
举例来说，当记忆节点SN所储存的数据为逻辑低电平的数据时，反相器120的输出端为逻辑高电平，因此第二晶体管MP2为截止状态，故而记忆节点SN所储存的数据可保持在逻辑低电平。然而，若第二晶体管MP2于截止状态下的漏电流过大，将会导致记忆节点SN的电压逐渐上升，并最终通过反相器120而导通第二晶体管MP2，致使记忆节点SN所储存的数据成为逻辑高电平数据。因此，通过增加第二晶体管MP2的基体效应，以降低第二晶体管MP2流至记忆节点SN的漏电流，可有效防止记忆节点SN所储存的数据发生错误。
另外，在图1所示的实施例中，第一晶体管MN1为N型金氧半场效晶体管，且第一晶体管MN1的基体耦接负电压VN以增加第一晶体管MN1的基体效应，但本发明不限于此。可以理解的是，通过增加第一晶体管MN1的基体效应，以降低第一晶体管MN1与记忆节点SN之间的漏电流，也可有效防止记忆节点SN所储存的数据发生错误。
在本发明的一实施例中，反相器120可采用互补式金属氧化物半导体(Complementary Metal-Oxide-Semiconductor，CMOS)反相器来实现，但本发明不限于此。由于CMOS反相器包括一个P型金氧半场效晶体管与一个N型金氧半场效晶体管，如此一来，图1所示的记忆胞100则可视为四晶体管式记忆胞(4T memory cell)。
图2是依照本发明另一实施例所示出的记忆胞的电路架构示意图。请参照图2，记忆胞200包括第一晶体管MP1、第二晶体管MP2以及反相器120。图2的记忆胞200类似于图1的记忆胞100，两者的差异仅在于：图1的第一晶体管MN1为N型金氧半场效晶体管，且第一晶体管MN1的基体耦接负电压VN以降低第一晶体管MN1与记忆节点SN之间的漏电流；而图2的第一晶体管MP1为P型金氧半场效晶体管，且第一晶体管MP1的基体耦接第二电压VP2以降低第一晶体管MP1与记忆节点SN之间的漏电流。通过降低第一晶体管MP1与记忆节点SN之间的漏电流，可有效防止记忆节点SN所储存的数据发生错误。另外，关于图2的记忆胞200的其他实施细节及运作，可参考上述图1的相关说明，在此不再赘述。
图3是依照本发明又一实施例所示出的记忆胞的电路架构示意图。请参照图3，记忆胞300包括第一晶体管MN1、第二晶体管MN2以及反相器120。第一晶体管MN1的第一端用以做为记忆胞300的数据输入端E_IN，第一晶体管MN1的控制端接收写入控制信号CS，且第一晶体管MN1的第二端耦接记忆节点SN。其中可通过写入控制信号CS导通第一晶体管MN1，以将数据输入端E_IN的数据写入记忆节点SN，并在数据输入端E_IN的数据写入记忆节点SN之后，关断第一晶体管MN1，以将数据储存在记忆节点SN。
反相器120的输入端耦接记忆节点SN。反相器120的输出端用以做为记忆胞300的数据输出端E_OUT。第二晶体管MN2的第一端耦接第一电压VG。第二晶体管MN2的控制端耦接反相器120的输出端。第二晶体管MN2的第二端耦接记忆节点SN。第二晶体管MN2的基体耦接第二电压VN2。特别是，为了降低第二晶体管MN2的漏电流，第二电压VN2的电压值不等于第一电压VG的电压值。
详细来说，在图3所示的实施例中，第二晶体管MN2为N型金氧半场效晶体管，第一电压VG为接地电压，且第二电压VN2为负电压。亦即第二电压VN2的电压值低于第一电压VG的电压值。如此一来，可增加第二晶体管MN2的基体效应，以降低自记忆节点SN流入第二晶体管MN2的漏电流，从而防止记忆节点SN所储存的数据发生错误。
举例来说，当记忆节点SN所储存的数据为逻辑高电平的数据时，反相器120的输出端为逻辑低电平，因此第二晶体管MN2为截止状态，故而记忆节点SN所储存的数据可保持在逻辑高电平。然而，若第二晶体管MN2于截止状态下的漏电流过大，将会导致记忆节点SN的电压逐渐降低，并最终通过反相器120而导通第二晶体管MN2，致使记忆节点SN所储存的数据成为逻辑低电平数据。因此，通过增加第二晶体管MN2的基体效应，以降低记忆节点SN流至第二晶体管MN2的漏电流，可有效防止记忆节点SN所储存的数据发生错误。
另外，在图3所示的实施例中，第一晶体管MN1为N型金氧半场效晶体管，且第一晶体管MN1的基体耦接第二电压VN2(为负电压)以增加第一晶体管MN1的基体效应，但本发明不限于此。可以理解的是，通过增加第一晶体管MN1的基体效应，以降低第一晶体管MN1与记忆节点SN之间的漏电流，也可有效防止记忆节点SN所储存的数据发生错误。
图4是依照本发明又一实施例所示出的记忆胞的电路架构示意图。请参照图4，记忆胞400包括第一晶体管MP1、第二晶体管MN2以及反相器120。图4的记忆胞400类似于图3的记忆胞300，两者的差异仅在于：图3的第一晶体管MN1为N型金氧半场效晶体管，且第一晶体管MN1的基体耦接第二电压VN2(为负电压)以增加第一晶体管MN1的基体效应；而图4的第一晶体管MP1为P型金氧半场效晶体管，且第一晶体管MP1的基体耦接第三电压VP3(为正电压)。特别是，第三电压VP3的电压值高于记忆胞400的数据输入端E_IN的电压值，如此可增加第一晶体管MP1的基体效应，以降低第一晶体管MP1与记忆节点SN之间的漏电流，故可有效防止记忆节点SN所储存的数据发生错误。至于图4的记忆胞400的其他实施细节及运作，可参考上述图3的相关说明，在此不再赘述。
综上所述，在本发明实施例所提出的记忆胞中，通过增加记忆胞的晶体管的基体效应，以降低晶体管与记忆节点之间的漏电流，可有效防止记忆节点所储存的数据发生错误。除此之外，本发明实施例所提出的记忆胞实质上可视为一种四晶体管式记忆胞。由于四晶体管式记忆胞的电路架构简单且电路面积小，故可有效降低生产制造的风险及硬件成本。
虽然本发明已以实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中的技术人员，在不脱离本发明的精神和范围内，当可作些许的更改与润饰，故本发明的保护范围当视权利要求所界定的为准。

Claims (8)

1.一种记忆胞，其特征在于，包括：
第一晶体管，所述第一晶体管的第一端用以做为所述记忆胞的数据输入端，所述第一晶体管的控制端接收写入控制信号，且所述第一晶体管的第二端耦接记忆节点；
反相器，所述反相器的输入端耦接所述记忆节点，且所述反相器的输出端用以做为所述记忆胞的数据输出端；以及
第二晶体管，所述第二晶体管的第一端耦接第一电压，所述第二晶体管的控制端耦接所述反相器的所述输出端，所述第二晶体管的第二端耦接所述记忆节点，且所述第二晶体管的基体耦接第二电压，
其中所述第二电压的电压值不等于所述第一电压的电压值，以降低所述第二晶体管的漏电流。
2.根据权利要求1所述的记忆胞，其中所述第二晶体管为P型金氧半场效晶体管，所述第一电压与所述第二电压为正电压，且所述第二电压的电压值高于所述第一电压的电压值。
3.根据权利要求2所述的记忆胞，其中所述第一晶体管为N型金氧半场效晶体管，且所述第一晶体管的基体耦接负电压。
4.根据权利要求2所述的记忆胞，其中所述第一晶体管为P型金氧半场效晶体管，且所述第一晶体管的基体耦接所述第二电压。
5.根据权利要求1所述的记忆胞，其中所述第二晶体管为N型金氧半场效晶体管，所述第一电压为接地电压，且所述第二电压为负电压。
6.根据权利要求5所述的记忆胞，其中所述第一晶体管为N型金氧半场效晶体管，且所述第一晶体管的基体耦接所述第二电压。
7.根据权利要求5所述的记忆胞，其中所述第一晶体管为P型金氧半场效晶体管，且所述第一晶体管的基体耦接第三电压，其中所述第三电压为正电压，且所述第三电压的电压值高于所述记忆胞的所述数据输入端的电压值。
8.根据权利要求1所述的记忆胞，其中所述反相器为互补式金属氧化物半导体反相器。
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