US20200012837A1 - Optical identification module - Google Patents
Optical identification module Download PDFInfo
- Publication number
- US20200012837A1 US20200012837A1 US16/362,706 US201916362706A US2020012837A1 US 20200012837 A1 US20200012837 A1 US 20200012837A1 US 201916362706 A US201916362706 A US 201916362706A US 2020012837 A1 US2020012837 A1 US 2020012837A1
- Authority
- US
- United States
- Prior art keywords
- openings
- shielding layer
- light shielding
- identification module
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 description 12
- 239000012780 transparent material Substances 0.000 description 10
- 230000002349 favourable effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 230000001815 facial effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- G06K9/00013—
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/147—Details of sensors, e.g. sensor lenses
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
- G02B1/041—Lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
- G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/382—Information transfer, e.g. on bus using universal interface adapter
- G06F13/385—Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
- G06F13/4291—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/00127—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
- H04N1/00204—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
- H04N1/00209—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
- H04N1/00214—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/21—Intermediate information storage
- H04N1/2104—Intermediate information storage for one or a few pictures
- H04N1/2112—Intermediate information storage for one or a few pictures using still video cameras
- H04N1/2137—Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/66—Remote control of cameras or camera parts, e.g. by remote control devices
- H04N23/661—Transmitting camera control signals through networks, e.g. control via the Internet
- H04N23/662—Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/72—Combination of two or more compensation controls
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/743—Bracketing, i.e. taking a series of images with varying exposure conditions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
- H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F2213/0002—Serial port, e.g. RS232C
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L67/00—Network arrangements or protocols for supporting network services or applications
- H04L67/01—Protocols
- H04L67/10—Protocols in which an application is distributed across nodes in the network
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2201/00—Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
- H04N2201/0077—Types of the still picture apparatus
- H04N2201/0084—Digital still camera
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Definitions
- the invention relates to an optical module. More particularly, the invention relates to an optical identification module capable of identifying a biometric feature.
- an optical identification module capable of identifying biometric features through the optical manner may feature advantages such as greater durability and lower costs since biometric feature identification is performed through a sensor in the optical identification module to receive light beams reflected by an object. Nevertheless, the light beams reflected by the object may easily be transmitted to the sensor in a scattering manner, which may lead to poor image capturing quality and affect the identification result.
- the invention provides an optical identification module featuring a favorable identification capability.
- An optical identification module provided by an embodiment of the invention includes a sensor and a collimator.
- the sensor has a plurality of sensing regions.
- the collimator is disposed on the sensing regions, and the collimator includes a transparent substrate and a first light shielding layer.
- the first light shielding layer is disposed on a first surface of the transparent substrate.
- the first light shielding layer includes a plurality of first openings. A ratio of a thickness of the first light shielding layer to a width of each of the first openings is greater than 1.
- the first light shielding layer is located between the transparent substrate and the sensor, and a size of each of the first openings is less than or equal to a size of each of the sensing regions.
- the collimator further includes a second light shielding layer and a plurality of microlenses.
- the second light shielding layer is disposed on a second surface of the transparent substrate. The second surface is opposite to the first surface.
- the second light shielding layer includes a plurality of second openings. A size of each of the second openings is greater than or equal to the size of each of the first openings.
- the microlenses are disposed on the second surface and respectively located in the second openings.
- an absolute value of a difference in refractive index between the microlenses and the transparent substrate is less than 0.1.
- the transparent substrate is located between the first light shielding layer and the sensor.
- the collimator further includes a second light shielding layer and a plurality of microlenses.
- the second light shielding layer is disposed on a second surface of the transparent substrate. The second surface is opposite to the first surface.
- the second light shielding layer includes a plurality of second openings. A size of each of the second openings is less than or equal to a size of each of the sensing regions, and a size of each of the first openings is greater than or equal to the size of each of the second openings.
- the microlenses are disposed on the first surface and respectively located in the first openings.
- An optical identification module provided by an embodiment of the invention includes a sensor and a collimator.
- the sensor has a plurality of sensing regions.
- the collimator is disposed on the sensing regions, and the collimator includes a transparent substrate, a first light shielding layer, and a second light shielding layer.
- the transparent substrate has a first surface and a second surface, and the second surface is located between the first surface and the sensor.
- the first light shielding layer is disposed on the first surface, and the first light shielding layer includes a plurality of first openings.
- the second light shielding layer is disposed on the second surface, and the second light shielding layer includes a plurality of second openings.
- a size of each of the second openings is less than or equal to a size of each of the sensing regions, and a size of each of the first openings is greater than or equal to the size of each of the second openings.
- the collimator further includes a plurality of microlenses.
- the microlenses are disposed on the first surface and respectively located in the first openings.
- the optical identification module provided by the invention, the light beams transmitted to the sensor are collimated through the collimator, so that optical disturbance (crosstalk) is effectively improved, optical noise reduction is achieved, and image resolution is increased. Therefore, the optical identification module of the invention may feature a favorable identification capability.
- FIG. 1 to FIG. 7 are schematic cross-sectional views of optical identification modules according to a first to a seventh embodiments of the invention.
- Optical identification modules listed in the following embodiments are adapted to capture a biometric feature of an object.
- the object may be a finger or a palm.
- the biometric feature may be fingerprints, veins, or palm prints, but is not limited in this regard.
- FIG. 1 to FIG. 7 are schematic cross-sectional views of optical identification modules according to a first to a seventh embodiments of the invention.
- an optical identification module 100 of the first embodiment includes a sensor 110 and a collimator 120 .
- the sensor 110 is adapted to receive light beams (i.e., light beams carrying biometric feature information, not shown) reflected by the object (not shown).
- the sensor 110 may include a charge coupled device (CCD), a complementary metal-oxide semiconductor (CMOS), or optical sensing devices of other suitable types.
- CCD charge coupled device
- CMOS complementary metal-oxide semiconductor
- optical sensing devices of other suitable types.
- the sensor 110 has a plurality of sensing regions R.
- the sensing regions R are a plurality of light-collecting regions in the sensor 110 .
- each of the sensing regions R is a region where each of the charge coupled devices is located.
- the sensing regions R are a plurality of pixel regions in the complementary metal-oxide semiconductor.
- the collimator 120 is disposed on the sensing regions R.
- the collimator 120 is disposed between the object and the sensor 110 , so as to collimate the light beams reflected by the object and transmitted towards the sensor 110 . In this way, optical disturbance is improved, optical noise reduction is achieved, and image resolution is increased.
- the collimator 120 includes a transparent substrate 122 and a first light shielding layer 124 .
- the transparent substrate 122 may be any carrier allowing light beams to pass through.
- the transparent substrate 122 may include a glass substrate or a plastic substrate, but is not limited in this regard.
- the transparent substrate 122 has a first surface S 1 and a second surface S 2 opposite to the first surface S 1 .
- the first light shielding layer 124 is disposed on the first surface S 1 of the transparent substrate 122 .
- the first surface S 1 is located between the second surface S 2 and the sensor 110 . That is, the first surface S 1 is a surface of the transparent substrate 122 facing the sensor 110 , and the second surface S 2 is a surface of the transparent substrate 122 facing away from the sensor 110 .
- the first light shielding layer 124 is located between the transparent substrate 122 and the sensor 110 .
- the collimator 120 may be placed upside down, so that the first surface S 1 on which the first light shielding layer 124 is disposed faces away from the sensor 110 , and the second surface S 2 faces the sensor 110 . In this way, the transparent substrate 122 is located between the first light shielding layer 124 and the sensor 110 .
- the first light shielding layer 124 is adapted to shield the scattered light, and the first light shielding layer 124 may be made of any material capable of shielding the light.
- the light-shielding material may include a light absorption material, but is not limited in this regard.
- the material of the first light shielding layer 124 may include black ink or a black photoresist.
- the first light shielding layer 124 may be formed on the first surface S 1 through printing. Nevertheless, the material and color of the first light shielding layer 124 and a manner through which the first light shielding layer 124 is formed on the first surface S 1 may be changed according to needs and are not limited to the above.
- the first light shielding layer 124 of the collimator 120 includes a plurality of first openings O 1 disposed corresponding to the sensing regions R of the sensor 110 . As such, the light beams reflected by the object may be transmitted to the sensor 110 through the first openings O 1 .
- a size of each of the first openings O 1 (e.g., a width WO 1 of each of the first openings O 1 ) is less than or equal to a size of each of the sensing regions R (a width WR of each of the sensing regions R), so that the light beams in each of the first openings O 1 are transmitted to the corresponding sensing region R.
- the width (e.g., the width WO 1 of each of the first openings O 1 and the width WR of each of the sensing regions R) may be a diameter of each of the openings/regions (in response to that a shape of each of the openings/regions is a circle) or a diagonal length of each of the openings/regions (in response to that the shape of each of the openings/regions is a quadrilateral).
- the first openings O 1 and the sensing regions R are disposed through a one-to-one relationship, that is, each of the sensing regions R has one first opening O 1 disposed thereon.
- the first openings O 1 and the sensing regions R may be disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O 1 disposed thereon.
- Each of the first openings O 1 may be filled with or may not be filled with a transparent material according to needs.
- each of the first openings O 1 is not filled with any material. That is, a light transmission medium in each of the first openings O 1 is air.
- each of the first openings O 1 may be filled with a transparent material. That is, the light transmission medium in each of the first openings O 1 is the transparent material.
- a refractive index of the transparent material is preferably equal to or close to a refractive index of the transparent substrate 122 , so as to reduce optical loss caused by interface reflection or light beam transmission path changes.
- an included angle between an extending direction DE 1 of each of the first openings O 1 and a thickness direction DT of the transparent substrate 122 falls in the range of 0 degrees to 45 degrees.
- the included angle (not shown) between the extending direction DE 1 and the thickness direction DT is 0 degrees.
- each of the first openings O 1 extends in the thickness direction DT of the transparent substrate 122 , but the invention is not limited thereto.
- a collimation effect on the light beams transmitted towards the sensing regions R is related to a thickness T 124 of each of the first light shielding layer 124 and the width WO 1 of each of the first openings O 1 .
- the collimation effect on the light beams becomes more evident.
- the thickness of the first light shielding layer 124 decreases and/or the width of each of the first openings O 1 increases, the collimation effect on the light beams becomes less evident.
- a ratio (T 124 /WO 1 ) of the thickness T 124 of the first light shielding layer 124 to the width WO 1 of each of the first openings O 1 is greater than 1.
- the optical identification module 100 may further include other elements according to different needs.
- the optical identification module 100 may further include a light source, but is not limited in this regard.
- the included angle ⁇ between the extending direction DE 1 of each of the first openings O 1 and the thickness direction DT of the transparent substrate 122 is greater than 0 degrees and is less than or equal to 45 degrees.
- the first openings O 1 and the sensing regions R are disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O 1 disposed thereon.
- the first openings O 1 and the sensing regions R are disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O 1 disposed thereon.
- a collimator 120 A further includes a second light shielding layer 126 and a plurality of microlenses 128 in addition to the transparent substrate 122 and the first light shielding layer 124 .
- the second light shielding layer 126 is disposed on the second surface S 2 of the transparent substrate 122 .
- the second light shielding layer 126 and the first light shielding layer 124 are respectively located at two opposite sides of the transparent substrate 122 .
- the second light shielding layer 126 is adapted to shield scattered light as well, and the second light shielding layer 126 may be made of any material capable of shielding light.
- the light-shielding material may include a light absorption material, but is not limited in this regard.
- the material of the second light shielding layer 126 may include black ink or a black photoresist.
- the second light shielding layer 126 may be formed on the second surface S 2 through printing. Nevertheless, the material and color of the second light shielding layer 126 and a manner through which the second light shielding layer 126 is formed on the second surface S 2 may be changed according to needs and are not limited to the above.
- the second light shielding layer 126 includes a plurality of second openings O 2 disposed corresponding to the plurality of first openings O 1 of the first light shielding layer 124 , and a size of each of the second openings O 2 (e.g., a width WO 2 of each of the second openings O 2 ) may be greater than or equal to the size of each of the first openings O 1 (e.g., the width WO 1 of each of the first openings O 1 ).
- the microlenses 128 are disposed on the second surface S 2 and are respectively located in the second openings O 2 . Further, the microlenses 128 are adapted to converge light beams, so as to help the sensor 110 to receive more light beams reflected by the object.
- the microlenses 128 are arranged on the second surface S 2 in an array form, and the microlenses 128 and the sensing regions R are disposed through a one-to-one relationship. Nevertheless, in another embodiment, the microlenses 128 and the sensing regions R may also be disposed through a many-to-one relationship.
- a refractive index of the microlenses 128 is preferably equal to or close to the refractive index of the transparent substrate 122 , so as to reduce optical loss caused by interface reflection or light beam transmission path changes.
- an absolute value of a difference in refractive index between the microlenses 128 and the transparent substrate 122 is preferably less than 0.1.
- a radius of curvature of each of the microlenses 128 is less than a ratio (T 122 /WR) of the thickness T 122 of the transparent substrate 122 to the width WR of each of the sensing regions R, so that a favorable convergence effect is achieved.
- each of the first openings O 1 may be filled with or may not be filled with a transparent material according to needs.
- the microlenses 128 may not be included in the collimator 120 A.
- each of the second openings O 2 may be filled with or may not be filled with a transparent material according to needs as well.
- the optical identification module 300 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein.
- the first surface S 1 on which the first light shielding layer 124 is disposed faces away from the sensor 110
- the second surface S 2 on which the second light shielding layer 126 is disposed faces the sensor 110 .
- the transparent substrate 122 is located between the first light shielding layer 124 and the sensor 110 .
- each of the second openings O 2 (e.g., the width WO 2 of each of the second openings O 2 ) is less than or equal to the size of each of the sensing regions R (the width WR of each of the sensing regions R).
- the size of each of the first openings (e.g., the width WO 1 of each of the first openings O 1 ) is greater than or equal to the size of each of the second openings O 2 (e.g., the width WO 2 of each of the second openings O 2 ).
- the microlenses 128 are disposed on the first surface S 1 and are respectively located in the first openings O 1 .
- the microlenses 128 are arranged on the first surface S 1 in an array form, and the microlenses 128 and the sensing regions R are disposed through a one-to-one relationship.
- the microlenses 128 and the sensing regions R may be disposed through a many-to-one relationship.
- Related design of the microlenses 128 may be found with reference to the foregoing, which is not further illustrated herein.
- each of the second openings O 2 may be filled with or may not be filled with a transparent material according to needs.
- the microlenses 128 may not be included in the collimator 120 B.
- each of the first openings O 1 may be filled with or may not be filled with a transparent material according to needs as well.
- the optical identification module 400 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein.
- a main difference between an optical identification module 500 of the seventh embodiment and the optical identification module 400 in FIG. 6 is described as follow.
- a first light shielding layer 124 C of a collimator 120 C is thinner than the first light shielding layer 124 of the collimator 120 B in FIG. 6 . That is, a thickness T 124 C is less than the thickness T 124 .
- a ratio (T 124 C/WO 1 ) of the thickness T 124 C of the first light shielding layer 124 C to the width WO 1 of each of the first openings O 1 may be less than or equal to 1.
- the optical identification module 500 may feature a thinner thickness.
- each of the second openings O 2 may be filled with or may not be filled with a transparent material according to needs.
- the microlenses 128 may not be included in the collimator 120 C.
- each of the first openings O 1 may be filled with or may not be filled with a transparent material according to needs as well.
- the optical identification module 500 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein.
- the optical identification module provided by the invention, the light beams transmitted to the sensor are collimated through the collimator, so that optical disturbance is effectively improved, optical noise reduction is achieved, and image resolution is increased. Therefore, the optical identification module of the invention may feature a favorable identification capability.
Abstract
Description
- This application claims the priority benefit of Taiwan application serial no. 107123381, filed on Jul. 5, 2018. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- The invention relates to an optical module. More particularly, the invention relates to an optical identification module capable of identifying a biometric feature.
- Along with the development of Internet of Things (IoT) technology, applications of and demands for the biometric identification technology rapidly expand. At present, the biometric identification technology in the market is commonly applied to identify biometric features such as fingerprints, palm prints, vein distribution, iris, retina, or facial features and the like through an optical, a capacitive, or an ultrasonic manner, so as to achieve identity identification or certification. Compared to an identification module capable of identifying biometric features through the capacitive or ultrasonic manner, an optical identification module capable of identifying biometric features through the optical manner may feature advantages such as greater durability and lower costs since biometric feature identification is performed through a sensor in the optical identification module to receive light beams reflected by an object. Nevertheless, the light beams reflected by the object may easily be transmitted to the sensor in a scattering manner, which may lead to poor image capturing quality and affect the identification result.
- The invention provides an optical identification module featuring a favorable identification capability.
- An optical identification module provided by an embodiment of the invention includes a sensor and a collimator. The sensor has a plurality of sensing regions. The collimator is disposed on the sensing regions, and the collimator includes a transparent substrate and a first light shielding layer. The first light shielding layer is disposed on a first surface of the transparent substrate. The first light shielding layer includes a plurality of first openings. A ratio of a thickness of the first light shielding layer to a width of each of the first openings is greater than 1.
- In an embodiment of the invention, the first light shielding layer is located between the transparent substrate and the sensor, and a size of each of the first openings is less than or equal to a size of each of the sensing regions.
- In an embodiment of the invention, the collimator further includes a second light shielding layer and a plurality of microlenses. The second light shielding layer is disposed on a second surface of the transparent substrate. The second surface is opposite to the first surface. The second light shielding layer includes a plurality of second openings. A size of each of the second openings is greater than or equal to the size of each of the first openings.
- In an embodiment of the invention, the microlenses are disposed on the second surface and respectively located in the second openings.
- In an embodiment of the invention, an absolute value of a difference in refractive index between the microlenses and the transparent substrate is less than 0.1.
- In an embodiment of the invention, the transparent substrate is located between the first light shielding layer and the sensor.
- In an embodiment of the invention, the collimator further includes a second light shielding layer and a plurality of microlenses. The second light shielding layer is disposed on a second surface of the transparent substrate. The second surface is opposite to the first surface. The second light shielding layer includes a plurality of second openings. A size of each of the second openings is less than or equal to a size of each of the sensing regions, and a size of each of the first openings is greater than or equal to the size of each of the second openings.
- In an embodiment of the invention, the microlenses are disposed on the first surface and respectively located in the first openings.
- An optical identification module provided by an embodiment of the invention includes a sensor and a collimator. The sensor has a plurality of sensing regions. The collimator is disposed on the sensing regions, and the collimator includes a transparent substrate, a first light shielding layer, and a second light shielding layer. The transparent substrate has a first surface and a second surface, and the second surface is located between the first surface and the sensor. The first light shielding layer is disposed on the first surface, and the first light shielding layer includes a plurality of first openings. The second light shielding layer is disposed on the second surface, and the second light shielding layer includes a plurality of second openings. A size of each of the second openings is less than or equal to a size of each of the sensing regions, and a size of each of the first openings is greater than or equal to the size of each of the second openings.
- In an embodiment of the invention, the collimator further includes a plurality of microlenses. The microlenses are disposed on the first surface and respectively located in the first openings.
- To sum up, in the optical identification module provided by the invention, the light beams transmitted to the sensor are collimated through the collimator, so that optical disturbance (crosstalk) is effectively improved, optical noise reduction is achieved, and image resolution is increased. Therefore, the optical identification module of the invention may feature a favorable identification capability.
- To make the aforementioned more comprehensible, several embodiments accompanied with drawings are described in detail as follows.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
-
FIG. 1 toFIG. 7 are schematic cross-sectional views of optical identification modules according to a first to a seventh embodiments of the invention. - In the drawings, common characteristics of the methods, structures and/or materials used in specific exemplary embodiments are shown. However, the drawings are not limited to the structures or features of the following embodiments and the drawings should not be interpreted to define or limit the scopes or the properties of the descriptions in the exemplary embodiments. For instance, the relative thickness and location of each film layer, region, and/or structure may be reduced or enlarged for clarity.
- The use of similar or the same reference numerals in the drawings is intended to indicate the presence of similar or the same elements or features. Similar reference numerals in the drawings represent similar elements, and related description thereof is omitted.
- Optical identification modules listed in the following embodiments are adapted to capture a biometric feature of an object. The object may be a finger or a palm. Correspondingly, the biometric feature may be fingerprints, veins, or palm prints, but is not limited in this regard.
-
FIG. 1 toFIG. 7 are schematic cross-sectional views of optical identification modules according to a first to a seventh embodiments of the invention. With reference toFIG. 1 , anoptical identification module 100 of the first embodiment includes asensor 110 and acollimator 120. - The
sensor 110 is adapted to receive light beams (i.e., light beams carrying biometric feature information, not shown) reflected by the object (not shown). For instance, thesensor 110 may include a charge coupled device (CCD), a complementary metal-oxide semiconductor (CMOS), or optical sensing devices of other suitable types. - The
sensor 110 has a plurality of sensing regions R. The sensing regions R are a plurality of light-collecting regions in thesensor 110. When thesensor 110 adopts a plurality of charge coupled devices to collect light beams, each of the sensing regions R is a region where each of the charge coupled devices is located. On the other hand, when thesensor 110 adopts a complementary metal-oxide semiconductor to collect light beams, the sensing regions R are a plurality of pixel regions in the complementary metal-oxide semiconductor. - The
collimator 120 is disposed on the sensing regions R. To be specific, thecollimator 120 is disposed between the object and thesensor 110, so as to collimate the light beams reflected by the object and transmitted towards thesensor 110. In this way, optical disturbance is improved, optical noise reduction is achieved, and image resolution is increased. - Further, the
collimator 120 includes atransparent substrate 122 and a firstlight shielding layer 124. Thetransparent substrate 122 may be any carrier allowing light beams to pass through. For instance, thetransparent substrate 122 may include a glass substrate or a plastic substrate, but is not limited in this regard. - The
transparent substrate 122 has a first surface S1 and a second surface S2 opposite to the first surface S1. The firstlight shielding layer 124 is disposed on the first surface S1 of thetransparent substrate 122. In this embodiment, the first surface S1 is located between the second surface S2 and thesensor 110. That is, the first surface S1 is a surface of thetransparent substrate 122 facing thesensor 110, and the second surface S2 is a surface of thetransparent substrate 122 facing away from thesensor 110. Hence, the firstlight shielding layer 124 is located between thetransparent substrate 122 and thesensor 110. In another embodiment, thecollimator 120 may be placed upside down, so that the first surface S1 on which the firstlight shielding layer 124 is disposed faces away from thesensor 110, and the second surface S2 faces thesensor 110. In this way, thetransparent substrate 122 is located between the firstlight shielding layer 124 and thesensor 110. - The first
light shielding layer 124 is adapted to shield the scattered light, and the firstlight shielding layer 124 may be made of any material capable of shielding the light. For instance, the light-shielding material may include a light absorption material, but is not limited in this regard. For instance, the material of the firstlight shielding layer 124 may include black ink or a black photoresist. Besides, the firstlight shielding layer 124 may be formed on the first surface S1 through printing. Nevertheless, the material and color of the firstlight shielding layer 124 and a manner through which the firstlight shielding layer 124 is formed on the first surface S1 may be changed according to needs and are not limited to the above. - Since the
collimator 120 is disposed between the object and thesensor 110, in order to allow thesensor 110 to receive the light beams (i.e., the light beams carrying the biometric feature information) reflected by the object, the firstlight shielding layer 124 of thecollimator 120 includes a plurality of first openings O1 disposed corresponding to the sensing regions R of thesensor 110. As such, the light beams reflected by the object may be transmitted to thesensor 110 through the first openings O1. - A size of each of the first openings O1 (e.g., a width WO1 of each of the first openings O1) is less than or equal to a size of each of the sensing regions R (a width WR of each of the sensing regions R), so that the light beams in each of the first openings O1 are transmitted to the corresponding sensing region R. The width (e.g., the width WO1 of each of the first openings O1 and the width WR of each of the sensing regions R) may be a diameter of each of the openings/regions (in response to that a shape of each of the openings/regions is a circle) or a diagonal length of each of the openings/regions (in response to that the shape of each of the openings/regions is a quadrilateral).
- In this embodiment, the first openings O1 and the sensing regions R are disposed through a one-to-one relationship, that is, each of the sensing regions R has one first opening O1 disposed thereon. Nevertheless, in another embodiment, the first openings O1 and the sensing regions R may be disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O1 disposed thereon.
- Each of the first openings O1 may be filled with or may not be filled with a transparent material according to needs. In this embodiment, each of the first openings O1 is not filled with any material. That is, a light transmission medium in each of the first openings O1 is air. Nevertheless, in another embodiment, each of the first openings O1 may be filled with a transparent material. That is, the light transmission medium in each of the first openings O1 is the transparent material. A refractive index of the transparent material is preferably equal to or close to a refractive index of the
transparent substrate 122, so as to reduce optical loss caused by interface reflection or light beam transmission path changes. - According to different design requirements, an included angle between an extending direction DE1 of each of the first openings O1 and a thickness direction DT of the
transparent substrate 122 falls in the range of 0 degrees to 45 degrees. In this embodiment, the included angle (not shown) between the extending direction DE1 and the thickness direction DT is 0 degrees. In other words, each of the first openings O1 extends in the thickness direction DT of thetransparent substrate 122, but the invention is not limited thereto. - A collimation effect on the light beams transmitted towards the sensing regions R is related to a thickness T124 of each of the first
light shielding layer 124 and the width WO1 of each of the first openings O1. In response to that the thickness of the firstlight shielding layer 124 increases and/or the width of each of the first openings O1 decreases, the collimation effect on the light beams becomes more evident. Conversely, in response to that the thickness of the firstlight shielding layer 124 decreases and/or the width of each of the first openings O1 increases, the collimation effect on the light beams becomes less evident. In order to effectively collimate the light beams (e.g., shielding/absorbing, through the firstlight shielding layer 124, the large-angle light beam in the light beams transmitted towards the sensing regions R), a ratio (T124/WO1) of the thickness T124 of the firstlight shielding layer 124 to the width WO1 of each of the first openings O1 is greater than 1. Through the foregoing design, optical disturbance may be effectively improved, optical noise reduction is achieved, and image resolution is increased, so that theoptical identification module 100 may feature a favorable identification capability. - The
optical identification module 100 may further include other elements according to different needs. For instance, theoptical identification module 100 may further include a light source, but is not limited in this regard. - With reference to
FIG. 2 , a main difference between anoptical identification module 200 of the second embodiment and theoptical identification module 100 inFIG. 1 is described as follow. In theoptical identification module 200, the included angle θ between the extending direction DE1 of each of the first openings O1 and the thickness direction DT of thetransparent substrate 122 is greater than 0 degrees and is less than or equal to 45 degrees. - With reference to
FIG. 3 , a main difference between anoptical identification module 100A of the third embodiment and theoptical identification module 100 inFIG. 1 is described as follow. In theoptical identification module 100A, the first openings O1 and the sensing regions R are disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O1 disposed thereon. - With reference to
FIG. 4 , a main difference between anoptical identification module 200A of the fourth embodiment and theoptical identification module 200 inFIG. 2 is described as follow. In theoptical identification module 200A, the first openings O1 and the sensing regions R are disposed through a many-to-one relationship, that is, each of the sensing regions R has plural first openings O1 disposed thereon. - With reference to
FIG. 5 , a main difference between anoptical identification module 300 of the fifth embodiment and theoptical identification module 100 inFIG. 1 is described as follow. In theoptical identification module 300, a collimator 120A further includes a secondlight shielding layer 126 and a plurality ofmicrolenses 128 in addition to thetransparent substrate 122 and the firstlight shielding layer 124. - The second
light shielding layer 126 is disposed on the second surface S2 of thetransparent substrate 122. In other words, the secondlight shielding layer 126 and the firstlight shielding layer 124 are respectively located at two opposite sides of thetransparent substrate 122. - The second
light shielding layer 126 is adapted to shield scattered light as well, and the secondlight shielding layer 126 may be made of any material capable of shielding light. For instance, the light-shielding material may include a light absorption material, but is not limited in this regard. For instance, the material of the secondlight shielding layer 126 may include black ink or a black photoresist. Besides, the secondlight shielding layer 126 may be formed on the second surface S2 through printing. Nevertheless, the material and color of the secondlight shielding layer 126 and a manner through which the secondlight shielding layer 126 is formed on the second surface S2 may be changed according to needs and are not limited to the above. - The second
light shielding layer 126 includes a plurality of second openings O2 disposed corresponding to the plurality of first openings O1 of the firstlight shielding layer 124, and a size of each of the second openings O2 (e.g., a width WO2 of each of the second openings O2) may be greater than or equal to the size of each of the first openings O1 (e.g., the width WO1 of each of the first openings O1). - The
microlenses 128 are disposed on the second surface S2 and are respectively located in the second openings O2. Further, themicrolenses 128 are adapted to converge light beams, so as to help thesensor 110 to receive more light beams reflected by the object. In this embodiment, themicrolenses 128 are arranged on the second surface S2 in an array form, and themicrolenses 128 and the sensing regions R are disposed through a one-to-one relationship. Nevertheless, in another embodiment, themicrolenses 128 and the sensing regions R may also be disposed through a many-to-one relationship. - A refractive index of the
microlenses 128 is preferably equal to or close to the refractive index of thetransparent substrate 122, so as to reduce optical loss caused by interface reflection or light beam transmission path changes. For instance, an absolute value of a difference in refractive index between themicrolenses 128 and thetransparent substrate 122 is preferably less than 0.1. In addition, a radius of curvature of each of themicrolenses 128 is less than a ratio (T122/WR) of the thickness T122 of thetransparent substrate 122 to the width WR of each of the sensing regions R, so that a favorable convergence effect is achieved. - In this embodiment, each of the first openings O1 may be filled with or may not be filled with a transparent material according to needs. In addition, the
microlenses 128 may not be included in the collimator 120A. Under such configuration, each of the second openings O2 may be filled with or may not be filled with a transparent material according to needs as well. Besides, theoptical identification module 300 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein. - With reference to
FIG. 6 , a main difference between anoptical identification module 400 of the sixth embodiment and theoptical identification module 300 inFIG. 5 is described as follow. In theoptical identification module 400, the first surface S1 on which the firstlight shielding layer 124 is disposed faces away from thesensor 110, and the second surface S2 on which the secondlight shielding layer 126 is disposed faces thesensor 110. In this way, thetransparent substrate 122 is located between the firstlight shielding layer 124 and thesensor 110. - In addition, the size of each of the second openings O2 (e.g., the width WO2 of each of the second openings O2) is less than or equal to the size of each of the sensing regions R (the width WR of each of the sensing regions R). Further, the size of each of the first openings (e.g., the width WO1 of each of the first openings O1) is greater than or equal to the size of each of the second openings O2 (e.g., the width WO2 of each of the second openings O2).
- The
microlenses 128 are disposed on the first surface S1 and are respectively located in the first openings O1. In this embodiment, themicrolenses 128 are arranged on the first surface S1 in an array form, and themicrolenses 128 and the sensing regions R are disposed through a one-to-one relationship. Nevertheless, in another embodiment, themicrolenses 128 and the sensing regions R may be disposed through a many-to-one relationship. Related design of themicrolenses 128 may be found with reference to the foregoing, which is not further illustrated herein. - In this embodiment, each of the second openings O2 may be filled with or may not be filled with a transparent material according to needs. In addition, the
microlenses 128 may not be included in thecollimator 120B. Under such configuration, each of the first openings O1 may be filled with or may not be filled with a transparent material according to needs as well. Besides, theoptical identification module 400 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein. - With reference to
FIG. 7 , a main difference between anoptical identification module 500 of the seventh embodiment and theoptical identification module 400 inFIG. 6 is described as follow. In theoptical identification module 500, a first light shielding layer 124C of a collimator 120C is thinner than the firstlight shielding layer 124 of thecollimator 120B inFIG. 6 . That is, a thickness T124C is less than the thickness T124. Further, a ratio (T124C/WO1) of the thickness T124C of the first light shielding layer 124C to the width WO1 of each of the first openings O1 may be less than or equal to 1. Hence, theoptical identification module 500 may feature a thinner thickness. - In this embodiment, each of the second openings O2 may be filled with or may not be filled with a transparent material according to needs. In addition, the
microlenses 128 may not be included in the collimator 120C. Under such configuration, each of the first openings O1 may be filled with or may not be filled with a transparent material according to needs as well. Besides, theoptical identification module 500 may further include other elements according to different needs. Related description may be found with reference to the foregoing, which is not further illustrated herein. - In view of the foregoing, in the optical identification module provided by the invention, the light beams transmitted to the sensor are collimated through the collimator, so that optical disturbance is effectively improved, optical noise reduction is achieved, and image resolution is increased. Therefore, the optical identification module of the invention may feature a favorable identification capability.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the disclosure covers modifications and variations provided that they fall within the scope of the following claims and their equivalents.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/742,920 US11262592B2 (en) | 2018-07-05 | 2020-01-15 | Optical identification module |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762568772P | 2017-10-05 | 2017-10-05 | |
TW107123381A TW201915818A (en) | 2017-10-05 | 2018-07-05 | Optical identification module |
TW107123381 | 2018-07-05 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/742,920 Continuation-In-Part US11262592B2 (en) | 2018-07-05 | 2020-01-15 | Optical identification module |
Publications (1)
Publication Number | Publication Date |
---|---|
US20200012837A1 true US20200012837A1 (en) | 2020-01-09 |
Family
ID=66066222
Family Applications (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/205,242 Active 2038-12-05 US10609296B1 (en) | 2017-10-05 | 2018-11-30 | Electronic device and automatic exposure convergence method |
US16/252,716 Active US10592448B2 (en) | 2017-10-05 | 2019-01-21 | Master-slave system, command execution method and data access method with use of serial peripheral interface (SPI) |
US16/261,594 Active US10885296B2 (en) | 2017-10-05 | 2019-01-30 | Electronic device and fingerprint sensing method |
US16/264,706 Active 2039-03-30 US10990781B2 (en) | 2017-10-05 | 2019-02-01 | Exposure method, electronic device and master-slave system |
US16/274,263 Active US10580483B1 (en) | 2017-10-05 | 2019-02-13 | Memory cell |
US16/352,833 Active US10810395B2 (en) | 2017-10-05 | 2019-03-14 | Electronic device and image capture method |
US16/362,706 Abandoned US20200012837A1 (en) | 2017-10-05 | 2019-03-25 | Optical identification module |
US16/364,197 Abandoned US20200018986A1 (en) | 2017-10-05 | 2019-03-26 | Optical apparatus |
US16/419,025 Active 2039-08-19 US10997386B2 (en) | 2017-10-05 | 2019-05-22 | Image data transmission system and image data transmission method |
Family Applications Before (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/205,242 Active 2038-12-05 US10609296B1 (en) | 2017-10-05 | 2018-11-30 | Electronic device and automatic exposure convergence method |
US16/252,716 Active US10592448B2 (en) | 2017-10-05 | 2019-01-21 | Master-slave system, command execution method and data access method with use of serial peripheral interface (SPI) |
US16/261,594 Active US10885296B2 (en) | 2017-10-05 | 2019-01-30 | Electronic device and fingerprint sensing method |
US16/264,706 Active 2039-03-30 US10990781B2 (en) | 2017-10-05 | 2019-02-01 | Exposure method, electronic device and master-slave system |
US16/274,263 Active US10580483B1 (en) | 2017-10-05 | 2019-02-13 | Memory cell |
US16/352,833 Active US10810395B2 (en) | 2017-10-05 | 2019-03-14 | Electronic device and image capture method |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/364,197 Abandoned US20200018986A1 (en) | 2017-10-05 | 2019-03-26 | Optical apparatus |
US16/419,025 Active 2039-08-19 US10997386B2 (en) | 2017-10-05 | 2019-05-22 | Image data transmission system and image data transmission method |
Country Status (3)
Country | Link |
---|---|
US (9) | US10609296B1 (en) |
CN (9) | CN109638632A (en) |
TW (8) | TW201915818A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220067323A1 (en) * | 2020-08-27 | 2022-03-03 | Au Optronics Corporation | Sensing device substrate and display apparatus having the same |
US20220301337A1 (en) * | 2019-09-22 | 2022-09-22 | Yu-Kuo Cheng | Fingerprint sensing module and electronic device |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI716142B (en) * | 2019-10-08 | 2021-01-11 | 大陸商廣州印芯半導體技術有限公司 | Optical identification module |
CN110503044A (en) * | 2018-12-03 | 2019-11-26 | 神盾股份有限公司 | Fingerprint sensor and its finger sensing method |
EP3796208B1 (en) * | 2018-12-14 | 2023-03-15 | Shenzhen Goodix Technology Co., Ltd. | Fingerprint recognition apparatus and electronic device |
US11682230B2 (en) * | 2019-03-07 | 2023-06-20 | Novatek Microelectronics Corp. | Fingerprint signal processing circuit and method for signal compensation in analog front-end |
EP3944628A4 (en) * | 2019-03-18 | 2023-02-22 | Hanwha Techwin Co., Ltd. | Camera analyzing images on basis of artificial intelligence, and operating method therefor |
WO2020227986A1 (en) * | 2019-05-15 | 2020-11-19 | 深圳市汇顶科技股份有限公司 | Image collection apparatus and method, and electronic device |
CN110164307B (en) * | 2019-05-23 | 2021-01-26 | 厦门天马微电子有限公司 | Display device with built-in fingerprint identification inductor |
KR20200137079A (en) | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | Fingerprint sensor and display device including the same |
US11314961B2 (en) * | 2019-06-12 | 2022-04-26 | Beijing Boe Display Technology Co., Ltd. | Texture image acquisition method, texture image acquisition circuit and display panel |
TWI748460B (en) * | 2019-06-21 | 2021-12-01 | 大陸商廣州印芯半導體技術有限公司 | Time of flight device and time of flight method |
CN110445012A (en) * | 2019-08-01 | 2019-11-12 | 浙江舜宇光学有限公司 | Light emitting module, preparation method and the depth finding device with it |
KR102494086B1 (en) * | 2019-08-23 | 2023-01-30 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | Fingerprint detection device, method and electronic device |
US11301708B2 (en) * | 2019-10-01 | 2022-04-12 | Novatek Microelectronics Corp. | Image sensing circuit and method |
CN112766017A (en) * | 2019-10-21 | 2021-05-07 | 广州印芯半导体技术有限公司 | Optical identification module |
CN110944125B (en) * | 2019-11-06 | 2022-02-22 | 西安理工大学 | Nonlinear column-level ADC (analog to digital converter) and method for improving contrast ratio of CMOS (complementary metal oxide semiconductor) image sensor |
CN110970454B (en) * | 2019-11-28 | 2022-03-15 | 苏州晶方半导体科技股份有限公司 | Packaging structure of biological characteristic recognition chip |
CN110867165B (en) * | 2019-11-29 | 2021-10-15 | 厦门天马微电子有限公司 | Display panel and display device |
WO2021107217A1 (en) * | 2019-11-29 | 2021-06-03 | 엘지전자 주식회사 | Radiation detector and radiographic method using same |
US11062110B2 (en) * | 2019-12-13 | 2021-07-13 | Novatek Microelectronics Corp. | Fingerprint detection device, method and non-transitory computer-readable medium for operating the same |
TWI727550B (en) * | 2019-12-13 | 2021-05-11 | 大陸商廣州印芯半導體技術有限公司 | Optical identification module |
CN111064073A (en) * | 2019-12-26 | 2020-04-24 | 常州纵慧芯光半导体科技有限公司 | Laser device and preparation method and application thereof |
CN113296277A (en) * | 2020-02-24 | 2021-08-24 | 宁波激智科技股份有限公司 | Collimation film, interference reduction collimation film and preparation method thereof |
CN113796853A (en) * | 2020-06-16 | 2021-12-17 | 广州印芯半导体技术有限公司 | Optical image comparison system and comparison method thereof |
US11327907B2 (en) | 2020-07-08 | 2022-05-10 | Macronix International Co., Ltd. | Methods and apparatus for improving SPI continuous read |
US11675731B2 (en) | 2020-08-20 | 2023-06-13 | Global Unichip Corporation | Data protection system and method thereof for 3D semiconductor device |
US11031923B1 (en) * | 2020-08-20 | 2021-06-08 | Global Unichip Corporation | Interface device and interface method for 3D semiconductor device |
US11699683B2 (en) | 2020-08-20 | 2023-07-11 | Global Unichip Corporation | Semiconductor device in 3D stack with communication interface and managing method thereof |
US11687472B2 (en) * | 2020-08-20 | 2023-06-27 | Global Unichip Corporation | Interface for semiconductor device and interfacing method thereof |
US11144485B1 (en) | 2020-08-20 | 2021-10-12 | Global Unichip Corporation | Interface for semiconductor device with symmetric bond pattern and method for arranging interface thereof |
CN112104802B (en) * | 2020-08-21 | 2021-07-20 | 深圳市睿联技术股份有限公司 | Camera circuit and camera device |
TWI744113B (en) * | 2020-09-30 | 2021-10-21 | 創意電子股份有限公司 | Interface device and interface method for 3d semiconductor device |
CN112511772A (en) * | 2020-10-28 | 2021-03-16 | 深圳奥辰光电科技有限公司 | Image sensor, method for enhancing linearity of image sensor and depth camera |
CN114826811A (en) * | 2021-01-28 | 2022-07-29 | 南宁富桂精密工业有限公司 | Data transmission method and system |
US11398102B1 (en) * | 2021-03-29 | 2022-07-26 | Innolux Corporation | Method for recognizing fingerprint |
US11798309B2 (en) * | 2021-04-15 | 2023-10-24 | Novatek Microelectronics Corp. | Fingerprint identification method for panel, electronic device, and control circuit |
CN115529828A (en) * | 2021-04-26 | 2022-12-27 | 泉州三安半导体科技有限公司 | Light emitting device |
CN114359985A (en) * | 2021-12-31 | 2022-04-15 | 深圳市汇顶科技股份有限公司 | Fingerprint identification method and device and electronic equipment |
TWI818536B (en) * | 2022-05-06 | 2023-10-11 | 圓展科技股份有限公司 | Communication method of wireless camera and pluggable device |
Family Cites Families (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1249616B (en) * | 1991-05-30 | 1995-03-09 | Sgs Thomson Microelectronics | BIT LINE PRELOAD CIRCUIT FOR READING AN EPROM MEMORY CELL. |
US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
FR2775091B1 (en) * | 1998-02-16 | 2000-04-28 | Matra Communication | METHOD FOR TRANSFERRING DATA IN SERIES, AND SYNCHRONOUS SERIAL BUS INTERFACE IMPLEMENTING SUCH A METHOD |
JP3326560B2 (en) * | 2000-03-21 | 2002-09-24 | 日本テキサス・インスツルメンツ株式会社 | Semiconductor memory device |
ATE506807T1 (en) * | 2001-06-18 | 2011-05-15 | Casio Computer Co Ltd | PHOTOSENSOR SYSTEM AND CONTROL METHOD THEREOF |
US7233350B2 (en) * | 2002-01-05 | 2007-06-19 | Candela Microsystems, Inc. | Image sensor with interleaved image output |
US7265784B1 (en) * | 2002-08-19 | 2007-09-04 | Pixim, Inc. | Image processor with noise reduction circuit |
TW562991B (en) * | 2002-11-20 | 2003-11-21 | Novatek Microelectronics Corp | Fast convergence method for the appropriate exposure value |
JP4219663B2 (en) * | 2002-11-29 | 2009-02-04 | 株式会社ルネサステクノロジ | Semiconductor memory device and semiconductor integrated circuit |
CN100337156C (en) * | 2002-12-05 | 2007-09-12 | 联咏科技股份有限公司 | Rapid convergence method for correct exposure value |
CN2609064Y (en) * | 2003-02-28 | 2004-03-31 | 光宝科技股份有限公司 | Name card scanner and transmission module |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
JP4136793B2 (en) * | 2003-05-29 | 2008-08-20 | キヤノン株式会社 | IMAGING DEVICE AND IMAGING DEVICE CONTROL METHOD |
US7483058B1 (en) * | 2003-08-04 | 2009-01-27 | Pixim, Inc. | Video imaging system including a digital image sensor and a digital signal processor |
US7446812B2 (en) * | 2004-01-13 | 2008-11-04 | Micron Technology, Inc. | Wide dynamic range operations for imaging |
US7292232B2 (en) * | 2004-04-30 | 2007-11-06 | Microsoft Corporation | Data input devices and methods for detecting movement of a tracking surface by a laser speckle pattern |
US7084667B2 (en) * | 2004-07-13 | 2006-08-01 | International Business Machines Corporation | Low leakage monotonic CMOS logic |
US7342256B2 (en) * | 2004-07-16 | 2008-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device mounted with read function and electric appliance |
JP4498270B2 (en) * | 2005-11-30 | 2010-07-07 | 株式会社バンダイナムコゲームス | Program, information storage medium, photo printing apparatus and photo printing method |
KR100665853B1 (en) * | 2005-12-26 | 2007-01-09 | 삼성전자주식회사 | Stacked memory cell for use in high-density cmos sram |
JP5168837B2 (en) * | 2006-07-27 | 2013-03-27 | ソニー株式会社 | Image processing apparatus, image processing method, and program |
CN200986927Y (en) * | 2006-09-15 | 2007-12-05 | 林三宝 | LED with micro-optical structure |
JP4843461B2 (en) * | 2006-11-13 | 2011-12-21 | 株式会社東芝 | Solid-state imaging device |
CN100573491C (en) * | 2006-12-15 | 2009-12-23 | 凌阳科技股份有限公司 | Serial transmission controller and serial transmission demoder and serial transmission method thereof |
CN100480830C (en) * | 2007-01-30 | 2009-04-22 | 北京中星微电子有限公司 | Method and device for backlighting detecting and stooping of backlighting compensation detecting |
CN100498749C (en) * | 2007-04-12 | 2009-06-10 | 威盛电子股份有限公司 | Serial peripheral interface data transmission method and serial peripheral interface data transmission system |
JP4470957B2 (en) * | 2007-04-26 | 2010-06-02 | ブラザー工業株式会社 | Image processing system and image reading apparatus |
DE102007024737A1 (en) * | 2007-05-25 | 2008-11-27 | Robert Bosch Gmbh | Data transfer method between master and slave devices |
US7920409B1 (en) * | 2007-06-05 | 2011-04-05 | Arizona Board Of Regents For And On Behalf Of Arizona State University | SRAM cell with intrinsically high stability and low leakage |
TWI334547B (en) * | 2007-06-07 | 2010-12-11 | Via Tech Inc | System and method for serial peripheral interface data transmission |
US20090006911A1 (en) * | 2007-06-28 | 2009-01-01 | Mediatek Inc. | Data replacement processing method |
US8429329B2 (en) * | 2007-10-17 | 2013-04-23 | Micron Technology, Inc. | Serial interface NAND |
US8103936B2 (en) * | 2007-10-17 | 2012-01-24 | Micron Technology, Inc. | System and method for data read of a synchronous serial interface NAND |
US9584710B2 (en) * | 2008-02-28 | 2017-02-28 | Avigilon Analytics Corporation | Intelligent high resolution video system |
US20100118153A1 (en) * | 2008-11-12 | 2010-05-13 | Xiaoguang Yu | Apparatus and methods for controlling image sensors |
US7849229B2 (en) * | 2008-11-25 | 2010-12-07 | Spansion Llc | SPI addressing beyond 24-bits |
US8156274B2 (en) * | 2009-02-02 | 2012-04-10 | Standard Microsystems Corporation | Direct slave-to-slave data transfer on a master-slave bus |
JP2010263305A (en) * | 2009-04-30 | 2010-11-18 | Fujifilm Corp | Imaging apparatus and method of driving the same |
CN102023945B (en) * | 2009-09-22 | 2012-03-28 | 鸿富锦精密工业(深圳)有限公司 | Serial peripheral interface bus-based equipment and data transmission method thereof |
CN101950280B (en) * | 2009-09-30 | 2012-11-14 | 威盛电子股份有限公司 | Chip selection method for generating a plurality of serial buses |
US20110078350A1 (en) * | 2009-09-30 | 2011-03-31 | Via Technologies, Inc. | Method for generating multiple serial bus chip selects using single chip select signal and modulation of clock signal frequency |
US8176209B2 (en) * | 2009-11-05 | 2012-05-08 | Electronics And Telecommunications Research Institute | Data communication system |
CN102097050B (en) * | 2009-12-11 | 2016-03-09 | 康佳集团股份有限公司 | A kind of apparatus and method realizing display seamless switching |
CN102104641A (en) * | 2009-12-18 | 2011-06-22 | 深圳富泰宏精密工业有限公司 | Mobile phone and method for realizing 360DEG photographing |
KR20110076729A (en) * | 2009-12-18 | 2011-07-06 | 삼성전자주식회사 | Multi-step exposed image acquisition method by electronic shutter and apparatus using the same |
US8327052B2 (en) * | 2009-12-23 | 2012-12-04 | Spansion Llc | Variable read latency on a serial memory bus |
TWI406135B (en) * | 2010-03-09 | 2013-08-21 | Nuvoton Technology Corp | Data transmission systems and programmable serial peripheral interface controller |
CN102200864B (en) * | 2010-03-26 | 2013-08-14 | 原相科技股份有限公司 | Optical touch device |
US8310584B2 (en) * | 2010-04-29 | 2012-11-13 | Victory Gain Group Corporation | Image sensing device having thin thickness |
CN101841624A (en) * | 2010-05-17 | 2010-09-22 | 北京思比科微电子技术股份有限公司 | Image sensor data transmission method |
US8325890B2 (en) * | 2010-06-06 | 2012-12-04 | Apple Inc. | Auto exposure techniques for variable lighting conditions |
JP2012008385A (en) * | 2010-06-25 | 2012-01-12 | Ricoh Co Ltd | Image forming device and image forming method |
US8422272B2 (en) * | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8433838B2 (en) * | 2010-09-17 | 2013-04-30 | International Business Machines Corporation | Remote multiplexing devices on a serial peripheral interface bus |
TWI507031B (en) * | 2010-10-15 | 2015-11-01 | Altek Corp | Image processing method |
CN102035530A (en) * | 2010-10-15 | 2011-04-27 | 北京工业大学 | Optimal maintaining pipe domino circuit used for high-performance VLSI (Very Large Scale Integrated Circuit) |
US20120097985A1 (en) * | 2010-10-21 | 2012-04-26 | Wen-Huang Liu | Light Emitting Diode (LED) Package And Method Of Fabrication |
KR101705045B1 (en) * | 2010-11-09 | 2017-02-10 | 삼성전자주식회사 | Analog to digital converter, image sensor having the same, and method of converting analog to digital |
CN102469248B (en) * | 2010-11-12 | 2016-03-02 | 华晶科技股份有限公司 | Device for filming image and image synthesis method thereof |
US9047178B2 (en) * | 2010-12-13 | 2015-06-02 | SanDisk Technologies, Inc. | Auto-commit memory synchronization |
CN102098441B (en) * | 2010-12-16 | 2016-09-07 | 深圳市经纬科技有限公司 | Image data transfer method based on SPI interface and camera installation |
CN102117342A (en) * | 2011-01-21 | 2011-07-06 | 中国科学院上海技术物理研究所 | Peripheral component interconnect (PCI) Express bus-based multiband infrared image real-time acquisition system and method |
JP5655626B2 (en) * | 2011-02-24 | 2015-01-21 | ソニー株式会社 | Image processing apparatus, image processing method, and program |
CN202049481U (en) * | 2011-03-17 | 2011-11-23 | 冠捷投资有限公司 | Sensing structure with master and slave relation |
JP5713752B2 (en) * | 2011-03-28 | 2015-05-07 | キヤノン株式会社 | Image processing apparatus and control method thereof |
US9077917B2 (en) * | 2011-06-09 | 2015-07-07 | Apple Inc. | Image sensor having HDR capture capability |
US8576653B2 (en) * | 2011-07-01 | 2013-11-05 | United Microelectronics Corp. | Hidden refresh method and operating method for pseudo SRAM |
CN107770462B (en) * | 2011-12-28 | 2020-09-22 | 株式会社尼康 | Imaging element and imaging device |
TWI450159B (en) * | 2012-03-02 | 2014-08-21 | Pixart Imaging Inc | Optical touch device, passive touch system and its input detection method |
WO2013146039A1 (en) * | 2012-03-30 | 2013-10-03 | シャープ株式会社 | Semiconductor storage device |
US9274997B2 (en) * | 2012-05-02 | 2016-03-01 | Smsc Holdings S.A.R.L. | Point-to-point serial peripheral interface for data communication between devices configured in a daisy-chain |
US8943250B2 (en) * | 2012-08-20 | 2015-01-27 | General Electric | Systems and methods for concatenating multiple devices |
US9003091B2 (en) * | 2012-10-18 | 2015-04-07 | Hewlett-Packard Development Company, L.P. | Flow control for a Serial Peripheral Interface bus |
TW201418992A (en) * | 2012-11-06 | 2014-05-16 | Megawin Technology Co Ltd | Data transmission control method and device of serial peripheral interface master device |
CN103092806A (en) * | 2013-01-18 | 2013-05-08 | 青岛海信宽带多媒体技术有限公司 | Data transmission method and data transmission system based on serial peripheral interface (SPI) data transmission timing sequences |
KR101444063B1 (en) * | 2013-03-22 | 2014-09-26 | 주식회사 슈프리마 | Method and apparatus for fingerprint recognition by using multi exposure |
CN104253188A (en) * | 2013-06-27 | 2014-12-31 | 展晶科技(深圳)有限公司 | Manufacturing method of light emitting diode element |
CN105324985B (en) * | 2013-07-04 | 2018-11-23 | 株式会社尼康 | Electronic equipment and photographing element |
TWI631854B (en) * | 2013-08-05 | 2018-08-01 | 日商新力股份有限公司 | Conversion device, imaging device, electronic device, conversion method |
CN103595503B (en) * | 2013-10-25 | 2016-08-17 | 福建升腾资讯有限公司 | A kind of frequency encoding and decoding communication system based on serial port device |
CN104714908B (en) * | 2013-12-13 | 2017-12-19 | 上海华虹集成电路有限责任公司 | Support the SPI interface of master slave mode |
JP6519095B2 (en) * | 2013-12-19 | 2019-05-29 | カシオ計算機株式会社 | CONTENT OUTPUT SYSTEM, CONTENT OUTPUT DEVICE, CONTENT OUTPUT METHOD, AND PROGRAM |
US9402039B2 (en) * | 2014-01-10 | 2016-07-26 | Omnivision Technologies, Inc. | Dual conversion gain high dynamic range sensor |
CN103838700A (en) * | 2014-02-20 | 2014-06-04 | 江苏理工学院 | Level multiplexing control serial communication device and method |
KR102149187B1 (en) * | 2014-02-21 | 2020-08-28 | 삼성전자주식회사 | Electronic device and control method of the same |
CN103888693B (en) * | 2014-03-31 | 2017-06-13 | 广东威创视讯科技股份有限公司 | Image transmission |
EP2938064B1 (en) * | 2014-04-24 | 2016-10-12 | Axis AB | Method and apparatus for determining exposure setting |
JP6478488B2 (en) * | 2014-06-18 | 2019-03-06 | キヤノン株式会社 | AD converter and solid-state imaging device |
CN105208294A (en) * | 2014-06-20 | 2015-12-30 | 中兴通讯股份有限公司 | Method and device for taking picture |
JP6454490B2 (en) * | 2014-07-17 | 2019-01-16 | ルネサスエレクトロニクス株式会社 | Semiconductor device and ramp signal control method |
JP6552336B2 (en) * | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | Semiconductor device |
CN104318205A (en) * | 2014-09-29 | 2015-01-28 | 上海箩箕技术有限公司 | Information detection display device, detection method and display method of information detection display device |
WO2016050750A1 (en) * | 2014-09-29 | 2016-04-07 | Biosurfit S.A. | Positioning mechanism |
US10732771B2 (en) * | 2014-11-12 | 2020-08-04 | Shenzhen GOODIX Technology Co., Ltd. | Fingerprint sensors having in-pixel optical sensors |
US10114789B2 (en) * | 2015-01-08 | 2018-10-30 | Samsung Electronics Co., Ltd. | System on chip for packetizing multiple bytes and data processing system including the same |
CN105991935B (en) * | 2015-02-15 | 2019-11-05 | 比亚迪股份有限公司 | Exposure-control device and exposal control method |
US20160246396A1 (en) * | 2015-02-20 | 2016-08-25 | Qualcomm Incorporated | Interactive touchscreen and sensor array |
JP2016161653A (en) * | 2015-02-27 | 2016-09-05 | 富士フイルム株式会社 | Photographing device and method |
EP3306864B1 (en) * | 2015-05-26 | 2019-09-25 | Hitachi Automotive Systems, Ltd. | Communication device and communication system |
CN204695305U (en) * | 2015-06-11 | 2015-10-07 | 北京海泰方圆科技有限公司 | A kind of SPI communication interface based on joint product and this joint product |
CN106663156B (en) | 2015-06-30 | 2020-08-07 | 华为技术有限公司 | Method and terminal for unlocking screen by fingerprint |
TWI576653B (en) * | 2015-07-31 | 2017-04-01 | 廣達電腦股份有限公司 | Exposure control system and method thereof |
US9819889B2 (en) * | 2015-08-07 | 2017-11-14 | Omnivision Technologies, Inc. | Method and system to implement a stacked chip high dynamic range image sensor |
CN105100631B (en) * | 2015-09-08 | 2019-03-01 | Oppo广东移动通信有限公司 | A kind of automatic continuous interval takes pictures, the method that images and mobile terminal |
US10003761B2 (en) * | 2015-09-10 | 2018-06-19 | Canon Kabushiki Kaisha | Imaging device having multiple analog-digital conversion circuits that perform multiple ad conversions for a singular one of a pixel signal |
US9990316B2 (en) * | 2015-09-21 | 2018-06-05 | Qualcomm Incorporated | Enhanced serial peripheral interface |
CN205038640U (en) * | 2015-09-25 | 2016-02-17 | 河南思维自动化设备股份有限公司 | Solve SPI bus communication delayed SPI equipment |
US10157590B1 (en) * | 2015-12-15 | 2018-12-18 | Apple Inc. | Display with localized brightness adjustment capabilities |
CN105578076A (en) * | 2015-12-18 | 2016-05-11 | 广东欧珀移动通信有限公司 | Imaging method, imaging device and electronic device |
CN106303269A (en) * | 2015-12-28 | 2017-01-04 | 北京智谷睿拓技术服务有限公司 | Image acquisition control method and device, image capture device |
US9743025B2 (en) * | 2015-12-30 | 2017-08-22 | Omnivision Technologies, Inc. | Method and system of implementing an uneven timing gap between each image capture in an image sensor |
CN106778459B (en) | 2015-12-31 | 2021-02-12 | 深圳市汇顶科技股份有限公司 | Fingerprint identification method and fingerprint identification device |
JP6885344B2 (en) * | 2016-01-20 | 2021-06-16 | ソニーグループ株式会社 | Solid-state image sensor, its driving method, and electronic devices |
KR102554495B1 (en) * | 2016-01-22 | 2023-07-12 | 에스케이하이닉스 주식회사 | Nonvolatile memory cell having lateral coupling structure and memory cell array using the nonvolatile memory cell |
US9800807B2 (en) * | 2016-02-26 | 2017-10-24 | Intel Corporation | Image sensor operation for shutter modulation and high dynamic range |
US10043051B2 (en) * | 2016-03-07 | 2018-08-07 | Microsoft Technology Licensing, Llc | Triggered image sensing with a display |
JP6747158B2 (en) * | 2016-08-09 | 2020-08-26 | ソニー株式会社 | Multi-camera system, camera, camera processing method, confirmation device, and confirmation device processing method |
CN206470775U (en) * | 2016-12-23 | 2017-09-05 | 敦捷光电股份有限公司 | Biometric recognition device.It |
CN110036627B (en) * | 2016-12-27 | 2021-03-05 | 松下知识产权经营株式会社 | Imaging device, camera, and imaging method |
CN106897701B (en) * | 2017-02-27 | 2019-08-23 | 京东方科技集团股份有限公司 | Optical finger print identifies mould group and display panel, display device |
CN107066859A (en) | 2017-03-15 | 2017-08-18 | 广东欧珀移动通信有限公司 | A kind of unlocked by fingerprint method and device |
CN107071153B (en) | 2017-03-21 | 2019-07-02 | Oppo广东移动通信有限公司 | A kind of fingerprint mould group mode switching method and device |
KR102331464B1 (en) * | 2017-04-18 | 2021-11-29 | 삼성전자주식회사 | Method for acquiring biometric information using a biometric information sensing area formed in a display area and electronic device supporting the same |
CN107135049B (en) * | 2017-04-19 | 2020-08-14 | 北京航天自动控制研究所 | Reliable asynchronous communication method facing discrete data stream |
CN107122742B (en) * | 2017-04-27 | 2019-12-03 | 上海天马微电子有限公司 | A kind of display device and its fingerprint identification method and electronic equipment |
CN107194326A (en) | 2017-04-28 | 2017-09-22 | 广东欧珀移动通信有限公司 | Fingerprint collecting method and related product |
CN107169447A (en) * | 2017-05-12 | 2017-09-15 | 贵州中信云联科技有限公司 | Hospital self-service system based on recognition of face |
EP3462731B1 (en) * | 2017-09-29 | 2021-11-10 | Canon Kabushiki Kaisha | Imaging device, imaging system, and moving body |
US10735459B2 (en) * | 2017-11-02 | 2020-08-04 | International Business Machines Corporation | Service overload attack protection based on selective packet transmission |
KR102460750B1 (en) * | 2018-02-13 | 2022-10-31 | 삼성전기주식회사 | Camera apparatus having ois function and communication method thereof |
JP6753985B2 (en) * | 2018-08-10 | 2020-09-09 | シャープ株式会社 | Analog-to-digital converter and solid-state image sensor |
-
2018
- 2018-07-05 TW TW107123381A patent/TW201915818A/en unknown
- 2018-07-13 TW TW107124245A patent/TW201915542A/en unknown
- 2018-07-23 TW TW107125354A patent/TWI728254B/en active
- 2018-07-26 CN CN201810831550.6A patent/CN109638632A/en active Pending
- 2018-07-27 TW TW107126012A patent/TWI679539B/en active
- 2018-07-27 CN CN201810841816.5A patent/CN109635794A/en active Pending
- 2018-07-31 TW TW107126454A patent/TWI719332B/en active
- 2018-08-09 CN CN201810901250.0A patent/CN109634063B/en active Active
- 2018-08-09 CN CN201810901261.9A patent/CN109634883B/en active Active
- 2018-08-17 CN CN201810938577.5A patent/CN109639957B/en active Active
- 2018-09-18 CN CN201811085989.5A patent/CN109857281A/en active Pending
- 2018-10-05 TW TW107135207A patent/TWI667653B/en active
- 2018-10-05 TW TW107135211A patent/TWI703865B/en active
- 2018-10-05 TW TW107135206A patent/TWI667919B/en active
- 2018-10-08 CN CN201811167749.XA patent/CN109640010B/en active Active
- 2018-10-08 CN CN201811167338.0A patent/CN109639988B/en active Active
- 2018-10-08 CN CN201811167356.9A patent/CN109637565B/en active Active
- 2018-11-30 US US16/205,242 patent/US10609296B1/en active Active
-
2019
- 2019-01-21 US US16/252,716 patent/US10592448B2/en active Active
- 2019-01-30 US US16/261,594 patent/US10885296B2/en active Active
- 2019-02-01 US US16/264,706 patent/US10990781B2/en active Active
- 2019-02-13 US US16/274,263 patent/US10580483B1/en active Active
- 2019-03-14 US US16/352,833 patent/US10810395B2/en active Active
- 2019-03-25 US US16/362,706 patent/US20200012837A1/en not_active Abandoned
- 2019-03-26 US US16/364,197 patent/US20200018986A1/en not_active Abandoned
- 2019-05-22 US US16/419,025 patent/US10997386B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220301337A1 (en) * | 2019-09-22 | 2022-09-22 | Yu-Kuo Cheng | Fingerprint sensing module and electronic device |
US20220067323A1 (en) * | 2020-08-27 | 2022-03-03 | Au Optronics Corporation | Sensing device substrate and display apparatus having the same |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20200012837A1 (en) | Optical identification module | |
TWI633493B (en) | Image capture apparatus | |
US10091402B1 (en) | Image capture apparatus | |
WO2018188427A1 (en) | Display device and control method therefor | |
US10198650B2 (en) | Image capture apparatus | |
JP7425002B2 (en) | Pattern image acquisition device, display device, and collimating member | |
WO2017118031A1 (en) | Optical fingerprint sensor module | |
WO2021042806A1 (en) | Fingerprint sensing module and electronic apparatus | |
US10502971B1 (en) | Image capturing module | |
TW201909026A (en) | Image capture device | |
WO2021077406A1 (en) | Fingerprint recognition apparatus and electronic device | |
TW202125037A (en) | Near-eye light field display device | |
TW201735335A (en) | Flip-chip image sensor package | |
US11262592B2 (en) | Optical identification module | |
WO2018006474A1 (en) | Optical fingerprint sensor module | |
WO2019218752A1 (en) | Texture recognition component, preparation method thereof and display device | |
TWI766583B (en) | Biometric sensing device and biometric sensing group | |
TWI716142B (en) | Optical identification module | |
WO2022016547A1 (en) | Fingerprint recognition apparatus and electronic device | |
WO2021008088A1 (en) | Fingerprint detection apparatus and electronic device | |
CN111414901A (en) | Fingerprint sensing module and electronic device | |
TW202117386A (en) | Optical imaging lens | |
CN112766017A (en) | Optical identification module | |
TWM571523U (en) | Optical recognition module | |
WO2021022830A1 (en) | Fingerprint sensing module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TYRAFOS TECHNOLOGIES CO., LIMITED, HONG KONG Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, CHUN-YU;FU, HSU-WEN;REEL/FRAME:048852/0666 Effective date: 20190305 |
|
AS | Assignment |
Owner name: GUANGZHOU TYRAFOS SEMICONDUCTOR TECHNOLOGIES CO., Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TYRAFOS TECHNOLOGIES CO., LIMITED;REEL/FRAME:050422/0385 Effective date: 20190903 Owner name: GUANGZHOU TYRAFOS SEMICONDUCTOR TECHNOLOGIES CO., LTD, CHINA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TYRAFOS TECHNOLOGIES CO., LIMITED;REEL/FRAME:050422/0385 Effective date: 20190903 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |