CN109639988A - 电子装置以及自动曝光收敛方法 - Google Patents

电子装置以及自动曝光收敛方法 Download PDF

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Publication number
CN109639988A
CN109639988A CN201811167338.0A CN201811167338A CN109639988A CN 109639988 A CN109639988 A CN 109639988A CN 201811167338 A CN201811167338 A CN 201811167338A CN 109639988 A CN109639988 A CN 109639988A
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China
Prior art keywords
exposure
time
multiple pixel
picture frame
processor
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Granted
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CN201811167338.0A
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CN109639988B (zh
Inventor
印秉宏
王佳祥
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Guangzhou Tyrafos Semiconductor Technologies Co Ltd
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Tyrafos Technologies Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/20Handling requests for interconnection or transfer for access to input/output bus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/041Lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/0944Diffractive optical elements, e.g. gratings, holograms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30Collimators
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0062Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • G02B3/0068Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/32Optical coupling means having lens focusing means positioned between opposed fibre ends
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/382Information transfer, e.g. on bus using universal interface adapter
    • G06F13/385Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G06F13/4291Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00Arrangements for image or video recognition or understanding
    • G06V10/10Image acquisition
    • G06V10/12Details of acquisition arrangements; Constructional details thereof
    • G06V10/14Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147Details of sensors, e.g. sensor lenses
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1318Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096Write circuits, e.g. I/O line write drivers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/00127Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
    • H04N1/00204Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
    • H04N1/00209Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
    • H04N1/00214Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/21Intermediate information storage
    • H04N1/2104Intermediate information storage for one or a few pictures
    • H04N1/2112Intermediate information storage for one or a few pictures using still video cameras
    • H04N1/2137Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/66Remote control of cameras or camera parts, e.g. by remote control devices
    • H04N23/661Transmitting camera control signals through networks, e.g. control via the Internet
    • H04N23/662Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/71Circuitry for evaluating the brightness variation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/72Combination of two or more compensation controls
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/73Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/743Bracketing, i.e. taking a series of images with varying exposure conditions
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/571Control of the dynamic range involving a non-linear response
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/587Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/12Static random access memory [SRAM] devices comprising a MOSFET load element
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2213/00Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F2213/0002Serial port, e.g. RS232C
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/06Adjustment of display parameters
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Abstract

本发明提出一种电子装置以及自动曝光收敛方法。电子装置包括图像传感器以及处理器。图像传感器用以取得第一图框。第一图框包括多个子图框区域,并且这些子图框区域各别包括多个像素数据。这些像素数据分别依据不同的多个曝光时间所取得。处理器耦接图像传感器。处理器用以分析第一图框,以将这些子图框区域中的具有相同曝光时间的这些像素数据组合为多个第二图框。处理器分析这些第二图框,以取得多个曝光值。处理器依据这些曝光值执行曝光收敛操作。

Description

电子装置以及自动曝光收敛方法
技术领域
本发明涉及一种图像感测技术,尤其涉及一种电子装置以及自动曝光收敛方法。
背景技术
随着图像感测技术的演进,有越来越多的电子产品配置有图像感测功能,例如照片拍摄或指纹感测等功能。然而,由于在图像获取的过程中,图像传感器接收到的环境光的明暗程度随着电子产品的环境不同或感测对象不同而改变,因此一般的图像传感器在获取图像的过程中将会先执行曝光收敛操作,以取得最佳曝光值,接着依据最佳曝光值来取得对应的图框。然而,传统的曝光收敛操作必须经由图像传感器依据不同曝光时间来执行多次的图像感测操作,并且通过依序分析多张图框来取得多个曝光值,值到这些曝光值收敛至一个最佳曝光值为止。因此,传统的曝光收敛操作需花费较多的时间以及电子产品的电能。有鉴于此,如何可快速地执行曝光收敛操作,以下将提出几个实施例的解决方案。
发明内容
本发明提供一种电子装置以及自动曝光收敛方法,可快速地执行曝光收敛(exposure convergence)操作。
本发明的电子装置包括图像传感器以及处理器。图像传感器用以取得第一图框。第一图框包括多个子图框区域,并且这些子图框区域各别包括多个像素数据。这些像素数据分别依据不同的多个曝光时间所取得。处理器耦接图像传感器。处理器用以分析第一图框,以将这些子图框区域中的具有相同曝光时间的这些像素数据组合为多个第二图框。处理器分析这些第二图框,以取得多个曝光值。处理器依据这些曝光值执行曝光收敛操作。
本发明的自动曝光收敛方法包括以下步骤:通过图像传感器取得第一图框,其中第一图框包括多个子图框区域,并且这些子图框区域各别包括多个像素数据,其中这些像素数据分别依据不同的多个曝光时间所取得;通过处理器分析第一图框,以将这些子图框区域中的具有相同曝光时间的这些像素数据组合为多个第二图框;通过处理器分析这些第二图框,以取得多个曝光值;以及通过处理器依据这些曝光值执行曝光收敛操作。
基于上述,本发明的电子装置以及自动曝光收敛方法,可通过图像传感器依据不同的多个曝光时间来取得第一图框,并且通过分析第一图框,来取得用于曝光收敛操作的多个曝光值,以使处理器可依据这些曝光值来快速地执行曝光收敛操作。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。
附图说明
图1是依照本发明的一实施例的电子装置的示意图;
图2是依照本发明的一实施例的第一图框的示意图;
图3A是现有的曝光收敛的示意图;
图3B是依照本发明的一实施例的曝光收敛的示意图;
图4是依照本发明的一实施例的像素单元的示意图;
图5是依照本发明的一实施例的操作多个像素单元的时序图;
图6是依照本发明的一实施例的自动曝光收敛方法的流程图。
附图标记说明
100:电子装置
110:图像传感器
120:处理器
200:第一图框
210_1~210_N:子图框区域
211~218:像素数据
301~308:曝光值
400:像素单元
BEV:最佳曝光值
RS11~RS81、RS22~RS82:重置信号
RO1~RO8:读出信号
S1、S11~S81:第一开关
S2、S12~S82:重置开关
S610~S640:步骤
P1、P2:端点
PD:感光二极管
具体实施方式
为了使本发明的内容可以被更容易明了,以下特举实施例作为本发明确实能够据以实施的范例。另外,凡可能之处,在附图及实施方式中使用相同标号的元件/构件/步骤,代表相同或类似部件。
图1是依照本发明的一实施例的电子装置的示意图。参考图1,电子装置100包括图像传感器110以及处理器120。处理器120耦接图像传感器110。图像传感器110用以依据不同的多个曝光时间(exposure time)来取得第一图框。第一图框可分为多个子图框区域,并且这些子图框区域各别包括分别依据不同的多个曝光时间所取得的多个像素数据。在本实施例中,处理器120分析第一图框以取得多个曝光值,并且依据这些曝光值来执行曝光收敛(exposure convergence)操作。
在本实施例中,电子装置100可为一种携带式电子产品,例如行动手机(Mobilephone)、平板(Tablet)或笔记本电脑(Laptop)等,本发明并不加以限制。在本实施例中,图像传感器110可为COMS图像传感器(CMOS Image Sensor,CIS)或感光耦合元件(ChargeCoupled Device,CCD)。在本实施例中,处理器120可为图像信号处理器(Image SignalProcessor,ISP)、中央处理器(Central Processing Unit,CPU)、微处理器(Microprocessor)、数字信号处理器(Digital Signal Processor,DSP)、可程序化控制器(Programmable Logic Controller,PLC)、特殊应用集成电路(Application SpecificIntegrated Circuit,ASIC)、系统单芯片(System on Chip,SoC)或其他类似元件或上述元件的组合。并且,在本实施例中,电子装置100还可包括存储器(Memory)。所述存储器可用以存储本发明各实施例所述的图框、像素数据、图像分析软件或运算软件等,本发明并不加以限制。
在一实施例中,电子装置100可为一种具有屏下光学指纹识别技术(Under-display optical fingerprint)功能的携带式电子产品,并且图像传感器110可为指纹传感器。对此,电子装置100可用于执行指纹感测,并且在取得指纹图像前,电子装置100可通过图像传感器110针对当前的指纹感测情境来自动地执行曝光收敛,以取得最佳曝光值,并且依据最佳曝光值来取得对应的指纹图像。
图2是依照本发明的一实施例的第一图框的示意图。图3A是现有的曝光收敛的示意图。图3B是依照本发明的一实施例的曝光收敛的示意图。参考图1至图3B,图像传感器110可进一步包括多个像素单元,并且这些像素单元可分为多个像素群。在本实施例中,图像传感器110得这些像素群用以在一次取像操作中分别依据不同曝光时间来取得如图2所示的第一图框200。如图2所示,第一图框200包括多个子图框区域210_1~210_N,其中N为大于0的正整数。这些子图框区域210_1~210_N各别包括8个像素数据211~218,并且这些像素数据211~218分别依据不同的多个曝光时间所取得。然而,本发明的像素数据的数量不限于图2所示。在本实施例中,处理器120可分析第一图框200,以将这些子图框区域210_1~210_N中的具有相同曝光时间的这些像素数据211~218组合为多个第二图框。接着,处理器分析这些第二图框,以取得如图3B所示的多个曝光值301~308。
具体而言,首先,本实施例的电子装置100在执行自动曝光收敛操作的过程中,处理器120可依据目前图像感测环境可能遭遇的最高照度以及最低照度,来计算这些曝光时间的最长曝光时间以及最短曝光时间。并且,处理器120可依据最长曝光时间以及最短曝光时间来决定多个曝光时间。例如依据固定的时间间隔在最长曝光时间以及最短曝光时间之间选择六个曝光时间,以获得共八个曝光时间参数。换言之,本实施例的电子装置100可自适应性地取得这些曝光时间。接着,电子装置100可通过不同的这些曝光时间来通过图像传感器110取得第一图框200,并且将第一图框200当中具有相同曝光时间的像素数据另组合为多个第二图框。因此,第二图框的解析度低于第一图框200。本实施例的处理器120可分析这些第二图框来取得相对应的这些曝光值301~308。也就是说,本实施例的电子装置100可通过单次图像获取操作来取得这些曝光值301~308,而无需经由8次图像获取操作来取得。接着,如图3B所示,处理器120分析这些曝光值301~308,以取得下一次取样的曝光值,由于这些曝光值301~308包含了充分的信息,因此第二次取样的曝光值即可收敛至BEV(最佳曝光值)。因此,本实施例的电子装置100可快速地执行曝光收敛操作。
举例而言,本实施例的图像传感器110可为指纹传感器。当电子装置100执行指纹操作时,由于图像传感器110所感测到的环境光可能随着电子装置100所处的环境状态而有所不同,或是图像传感器110所感测到的指纹图像可能随着不同的手指特性或使用习惯而需要特定的曝光值。因此,本实施例的电子装置100可在执行指纹操作前,而先执行自动曝光收敛操作,以取得最佳曝光值BEV。接着。电子装置100可依据最佳曝光值BEV来取得相关曝光参数,并且对应地取得具有良好图像品质的指纹图像。
图4是依照本发明的一实施例的像素单元的示意图。参考图4,上述实施例所述的像素单元的等效电路可如图4所示,但本发明并不限于此。在本实施例中,像素单元400可包括感光二极管PD、第一开关S1以及重置开关S2。感光二极管PD的一端耦接第一开关S1以及重置开关S2。第一开关S1的一端耦接第一端点P1,其中第一端点P1可耦接至类比至数字转换器(ADC),ADC输出端可耦接至上述的处理器或后端的图像信号处理单元(例如解码器)。第二开关S2的一端耦接第二端点P2,并且第二端点P2可耦接至一放电路径。具体而言,在一个图框时间中,感光二极管PD依据感光结果而对应产生感光电荷,并且像素单元400先通过重置开关接收重置信号,以进行放电。接着,像素单元400再通过第一开关S1接收读出信号,以将感光二极管PD所累积的感光电荷输出至ADC,ADC输出数据至处理器或后端的图像信号处理单元,以取得对应的像素数据。另外,上述的重置信号以及读出信号可例如是脉冲信号。
图5是依照本发明的一实施例的操作多个像素单元的时序图。参考图1、图2以及图5,以图2为例,图像传感器110可包括8个像素单元。举例来说,第一个像素单元的第一开关S11以及重置开关S12可依据重置信号RS11以及读出信号RO1来取得第一图框200的各个子图框区域210_1~210_N当中的像素数据211。第二个像素单元的第一开关S11以及重置开关S12可依据重置信号RS21、RS22以及读出信号RO1来取得第一图框200的各个子图框区域210_1~210_N当中的像素数据212。以此类推,第八个像素单元的第一开关S81以及重置开关S82可依据重置信号RS81、RS82以及读出信号RO1来取得第一图框200的各个子图框区域210_1~210_N当中的像素数据218。
值得注意的是,重置信号RS11~RS81分别与读出信号RO1~RO8之间具有第一时间差。所述第一时间差即为像素的开始积分时间以及结束积分时间(即相当于曝光时间)。在本实施例中,图像传感器110的这些像素单元的至少一部分的重置开关S21~S81更进一步接收重置信号RS22~RS82,并且重置信号RS22~RS82的时序分别插入至重置信号RS21~RS81以及读出信号RO1~RO8之间。重置信号RS22~RS82用以缩短积分时间。换言之,以第二个像素单元为例,由于第二个像素单元的重置开关S22接收两次重置信号RS21、RS22,因此当第二个像素单元的第一开关S21接收读出信号RO2时,第二个像素单元提供的像素数据是依据经由感光二极管在重置信号RS22至读出信号RO2之间的第二时间差当中所提供的(或累积)的感光电荷来决定的。因此,由于重置信号RS11、RS22~RS82分别与读出信号RO1~RO8之间具有不同的时间差,因此本实施例的图像传感器110的这些像素单元可分别依据不同的积分时间(或曝光时间)来取得第一图框200的各个子图框区域210_1~210_N当中的像素数据211~218。
此外,在一实施例中,图像传感器110的这些像素单元的重置开关S11~S81可仅接收重置信号RS11、RS22~RS82,而无需接收重置信号RS21~RS81。并且,在另一实施例中,重置信号RS11、RS22~RS82分别与读出信号RO1~RO8之间可具有相同的时间差。
图6是依照本发明的一实施例的自动曝光收敛方法的流程图。参考图1、图2以及图6,本实施例的自动曝光收敛方法可至少适用于图1实施例的电子装置100。电子装置100包括图像传感器110以及处理器120。也就是说,电子装置100可执行以下步骤S610~S640,以实现自动曝光收敛。在步骤S610中,图像传感器110取得第一图框200,其中第一图框包括多个子图框区域210_1~20_N,并且这些子图框区域210_1~20_N各别包括多个像素数据211~218,其中这些像素数据211~218分别依据不同的多个曝光时间所取得。在步骤S620中,处理器120分析第一图框200,以将这些子图框区域210_1~20_N中的具有相同曝光时间的像素数据组合为多个第二图框。在步骤S630中,处理器120分析这些第二图框,以取得多个曝光值。在步骤S640中,处理器120依据这些曝光值执行曝光收敛操作。因此,本实施例的电子装置可快速地执行曝光收敛操作。
另外,关于本实施例所述的电子装置100的其他元件特征或实施细节,可参考上述图1至图5实施例的说明而获致足够的教示、建议以及实施说明,因此在此不再赘述。
综上所述,本发明的电子装置以及自动曝光收敛方法可通过图像传感器依据不同的多个曝光时间在单次图像获取操作中取得第一图框,并且通过分析第一图框,来取得用于曝光收敛操作的多个曝光值。也就是说,电子装置的处理器可在单次图像获取操作中来依据这些曝光值来快速地执行曝光收敛操作,以有效地节省图像传感器在曝光收敛操作中所执行图像获取的操作次数以及时间,并且可有效地节省电子装置的电能。
虽然本发明已以实施例揭示如上,然其并非用以限定本发明,任何所属技术领域中技术人员,在不脱离本发明的精神和范围内,当可作些许的更改与润饰,故本发明的保护范围当视权利要求所界定的为准。

Claims (16)

1.一种电子装置,包括:
图像传感器,用以取得第一图框,其中所述第一图框包括多个子图框区域,并且所述多个子图框区域各别包括多个像素数据,其中所述多个像素数据分别依据不同的多个曝光时间所取得;以及
处理器,耦接所述图像传感器,用以分析所述第一图框,以将所述多个子图框区域中的具有相同曝光时间的所述多个像素数据组合为多个第二图框,并且所述处理器分析所述多个第二图框,以取得多个曝光值,
其中所述处理器依据所述多个曝光值执行曝光收敛操作。
2.根据权利要求1所述的电子装置,其中所述处理器依据目前图像感测环境可能遭遇的最高照度以及最低照度,来计算所述多个曝光时间的最长曝光时间以及最短曝光时间,并且所述处理器依据所述最长曝光时间以及所述最短曝光时间来决定所述多个曝光时间。
3.根据权利要求1所述的电子装置,其中所述图像传感器包括多个像素单元,并且所述多个像素单元可分为多个像素群,其中所述多个像素群用以在一次取像操作中分别依据不同曝光时间来取得所述第一图框的所述多个像素数据。
4.根据权利要求3所述的电子装置,其中所述多个像素单元各别包括:
感光二极管;
第一开关,耦接所述感光二极管;以及
重置开关,耦接所述感光二极管,其中所述重置开关用以接收第一重置信号,并且所述第一开关用以接收读出信号,
其中所述第一重置信号与所述读出信号之间的第一时间差为一个曝光时间。
5.根据权利要求4所述的电子装置,其中不同像素群的所述多个像素单元具有相同的所述第一时间差。
6.根据权利要求4所述的电子装置,其中所述多个像素单元的至少一部分的重置开关还接收第二重置信号,并且所述第二重置信号的时序介于所述第一重置信号以及所述读出信号之间。
7.根据权利要求6所述的电子装置,其中所述多个像素单元各别的所述第二重置信号以及所述读出信号之间具有第二时间差,并且所述第二时间差为所述曝光时间。
8.根据权利要求1所述的电子装置,其中所述图像传感器为指纹传感器。
9.一种自动曝光收敛方法,包括:
通过图像传感器取得第一图框,其中所述第一图框包括多个子图框区域,并且所述多个子图框区域各别包括多个像素数据,其中所述多个像素数据分别依据不同的多个曝光时间所取得;
通过处理器分析所述第一图框,以将所述多个子图框区域中的具有相同曝光时间的所述多个像素数据组合为多个第二图框;
通过所述处理器分析所述多个第二图框,以取得多个曝光值;以及
通过所述处理器依据所述多个曝光值执行曝光收敛操作。
10.根据权利要求9所述的自动曝光收敛方法,还包括:
通过所述处理器依据目前图像感测环境可能遭遇的最高照度以及最低照度,来计算所述多个曝光时间的最长曝光时间以及最短曝光时间;以及
通过所述处理器依据所述最长曝光时间以及所述最短曝光时间来决定所述多个曝光时间。
11.根据权利要求9所述的自动曝光收敛方法,其中所述图像传感器包括多个像素单元,并且所述多个像素单元可分为多个像素群,其中通过所述图像传感器取得所述第一图框的步骤包括:
通过所述多个像素群在一次取像操作中分别依据不同曝光时间来取得所述第一图框的所述多个像素数据。
12.根据权利要求11所述的自动曝光收敛方法,其中所述多个像素单元各别包括感光二极管、第一开关以及重置开关,并且通过所述图像传感器取得所述第一图框的步骤包括操作所述多个像素单元以执行:
通过所述重置开关接收第一重置信号;以及
通过所述第一开关接收读出信号,其中所述第一重置信号与所述读出信号之间的第一时间差为一个曝光时间。
13.根据权利要求12所述的自动曝光收敛方法,其中不同像素群的所述多个像素单元具有相同的所述第一时间差。
14.根据权利要求12所述的自动曝光收敛方法,其中通过所述图像传感器取得所述第一图框的步骤还包括:
通过所述多个像素单元的至少一部分的重置开关还接收第二重置信号,其中所述第二重置信号的时序介于所述第一重置信号以及所述读出信号之间。
15.根据权利要求14所述的自动曝光收敛方法,其中所述多个像素单元各别的所述第二重置信号以及所述读出信号之间具有第二时间差,并且所述第二时间差为所述曝光时间。
16.根据权利要求9所述的自动曝光收敛方法,其中所述图像传感器为指纹传感器。
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