TW201916674A - 電子裝置以及取像方法 - Google Patents

電子裝置以及取像方法 Download PDF

Info

Publication number
TW201916674A
TW201916674A TW107135211A TW107135211A TW201916674A TW 201916674 A TW201916674 A TW 201916674A TW 107135211 A TW107135211 A TW 107135211A TW 107135211 A TW107135211 A TW 107135211A TW 201916674 A TW201916674 A TW 201916674A
Authority
TW
Taiwan
Prior art keywords
image capturing
signal
bit data
significant bit
exposure time
Prior art date
Application number
TW107135211A
Other languages
English (en)
Other versions
TWI703865B (zh
Inventor
印秉宏
王佳祥
Original Assignee
香港商印芯科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 香港商印芯科技股份有限公司 filed Critical 香港商印芯科技股份有限公司
Priority to US16/352,833 priority Critical patent/US10810395B2/en
Publication of TW201916674A publication Critical patent/TW201916674A/zh
Application granted granted Critical
Publication of TWI703865B publication Critical patent/TWI703865B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/041—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/382—Information transfer, e.g. on bus using universal interface adapter
    • G06F13/385—Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G06F13/4291—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/00127—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
    • H04N1/00204—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
    • H04N1/00209—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
    • H04N1/00214—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/21—Intermediate information storage
    • H04N1/2104—Intermediate information storage for one or a few pictures
    • H04N1/2112—Intermediate information storage for one or a few pictures using still video cameras
    • H04N1/2137—Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/66—Remote control of cameras or camera parts, e.g. by remote control devices
    • H04N23/661—Transmitting camera control signals through networks, e.g. control via the Internet
    • H04N23/662—Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/71—Circuitry for evaluating the brightness variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/72—Combination of two or more compensation controls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/743—Bracketing, i.e. taking a series of images with varying exposure conditions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F2213/0002—Serial port, e.g. RS232C
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness
    • G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L67/00—Network arrangements or protocols for supporting network services or applications
    • H04L67/01—Protocols
    • H04L67/10—Protocols in which an application is distributed across nodes in the network
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2201/00—Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
    • H04N2201/0077—Types of the still picture apparatus
    • H04N2201/0084—Digital still camera
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

本發明提出一種電子裝置以及取像方法。電子裝置包括影像感測器、斜坡式類比至數位轉換器以及記憶體。影像感測器包括陣列排列的多個像素單元，並且這些像素單元在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及這些第二取像信號來產生對應於多些像素的多個最低有效位元資料。記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。

Description

電子裝置以及取像方法
本發明是有關於一種影像感測技術，且特別是有關於一種電子裝置以及取像方法。
隨著影像感測技術的演進，有越來越多的電子產品配置有影像感測功能，例如照片拍攝或指紋感測等功能。然而，為求高品質的影像擷取結果，例如高動態範圍（High Dynamic Range, HDR）的圖框，一般的影像感測器會擷取兩張具有不同曝光程度的圖框，以將明亮區域以及陰影區域加以重疊，以取得一張高動態範圍的圖框。對此，一般的影像感測器會例如先擷取並儲存兩張圖框中的每個像素的資料量分別為10 bits的圖框資料（10 bits+10 bits=20 bits）至記憶體，接著進行資料壓縮（例如將20 bits壓縮為16 bits）。也就是說，傳統取得具有高動態範圍的圖框的方式需要花費較多個影像擷取時間以及影像處理時間，並且還需要花費較多的記憶體空間。有鑑於此，如何取得高品質的圖框，並且可有效節省記憶體空間，以下將提出幾個實施例的解決方案。
本發明提供一種電子裝置以及取像方法，可取得高品質的圖框，並且可有效節省記憶體空間（memory size）。
本發明的電子裝置包括影像感測器、斜坡式類比至數位轉換器以及記憶體。影像感測器包括陣列排列的多個像素單元，並且這些像素單元用以在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器耦接影像感測器。斜坡式類比至數位轉換器用以產生第一非線性斜率信號以及第二非線性斜率信號。斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及這些第二取像信號來產生對應於這些像素的多個最低有效位元資料。處理器耦接斜坡式類比至數位轉換器。記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。
本發明的取像方法包括以下步驟：藉由在影像感測器中陣列排列的多個像素單元在取像操作中輸出多個第一取像信號以及多個第二取像信號；藉由斜坡式類比至數位轉換器產生第一非線性斜率信號以及第二非線性斜率信號；藉由斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料；藉由斜坡式類比至數位轉換器依據第二非線性斜率信號以及這些第二取像信號來產生對應於這些像素的多個最低有效位元資料；以及藉由記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。
基於上述，本發明的電子裝置以及取像方法可藉由斜坡式類比至數位轉換器依據第一非線性斜率信號以及多個第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及多個第二取像信號來產生對應於多個像素的多個最低有效位元資料，其中這些像素的這些最高有效位元資料以及這些最低有效位元資料可合併為一圖框資料。因此，本發明的電子裝置以及取像方法可取得高品質的圖框資料（高動態範圍），並且可有效節省記憶體空間。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
為了使本發明之內容可以被更容易明瞭，以下特舉實施例做為本發明確實能夠據以實施的範例。另外，凡可能之處，在圖式及實施方式中使用相同標號的元件/構件/步驟，係代表相同或類似部件。
圖1是依照本發明的一實施例的電子裝置的示意圖。參考圖1，電子裝置100包括影像感測器110、斜坡式類比至數位轉換器（ramp Analog to Digital Converter, ramp ADC）120以及記憶體140。影像感測器110耦接斜坡式類比至數位轉換器120。斜坡式類比至數位轉換器120耦接記憶體140。在本實施例中，影像感測器110可包括陣列排列的多個像素單元，並且這些像素單元用以在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器120可依據第一非線性斜率（non-linear ramp）信號以及第二非線性斜率信號來比對這些第一取像信號以及這些第二取像信號，以取得對應於多個像素的多個最高有效位元資料（Most Significant Bit, MSB）以及多個最低有效位元資料（Least Significant Bit, LSB）。處理器130可合併這些像素的這些最高有效位元資料以及這些最低有效位元資料為一筆圖框資料，並且記憶體140在取像操作中僅需儲存此筆圖框資料。
舉例而言，在一實施例中，斜坡式類比至數位轉換器120可包括比較器。對於圖框中的每一個像素而言，上述的取像信號可輸入至比較器的一端，並且非線性斜率信號可輸入至比較器的另一端。非線性斜率信號的電壓值隨著時間變化而增加，直到與取像信號的電壓值相同時，斜坡式類比至數位轉換器120即可讀出此像素的照度值（Luminance）所對應的數位數值（Digital Number, DN）。
在本實施例中，電子裝置100可為一積體電路或一種攜帶式電子產品，例如行動手機（Mobile phone）、平板（Tablet）或筆記型電腦（Laptop）等，本發明並不加以限制。在本實施例中，影像感測器110可為COMS影像感測器（CMOS Image Sensor, CIS）或感光耦合元件（Charge Coupled Device, CCD）。在本實施例中，斜坡式類比至數位轉換器120可產生第一非線性斜率信號以及第二非線性斜率信號，並且藉由第一非線性斜率信號以及第二非線性斜率信號來比對經由影像感測器110取得的這些第一取像信號以及這些第二取像信號，來取得對應於多個像素的多個最高有效位元資料以及多個最低有效位元資料。
在本實施例中，記憶體140用以儲存本發明各實施例所述的圖框資料。
在一實施例中，電子裝置100可為一種具有屏下光學指紋辨識技術（Under-display optical fingerprint）功能的積體電路或攜帶式電子產品，並且影像感測器110可為指紋感測器。對此，電子裝置100可用於執行指紋感測，並且影像感測器110可依據不同曝光時間來取得兩個指紋取像信號，並且斜坡式類比至數位轉換器120依據第一非線性斜率信號以及第二非線性斜率信號來掃描此兩個指紋取像信號，以獲得對應於在一指紋圖框當中的多個像素的多個最高有效位元資料以及多個最低有效位元資料。因此，在此一實施例中，電子裝置100可取得高品質的指紋圖框（高動態範圍），並且可有效節省記憶體空間。
圖2A是依照本發明的一實施例的第一非線性斜率信號的示意圖。圖2B是依照本發明的一實施例的第二非線性斜率信號的示意圖。參考圖1、圖2A以及圖2B，圖2A以及圖2B為表示非線性斜率信號的電壓與時間的關係曲線。在本實施例中，第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220係用於掃描像素單元提供的第一取樣信號以及第二取樣信號。當第一取樣信號與第一非線性斜率信號的電壓與時間的關係曲線210的某一點的電壓值相同時，則斜坡式類比至數位轉換器120可讀出對應的照度值以及數位數值。同理，當第二取樣信號與第二非線性斜率信號的電壓與時間的關係曲線220的某一點的電壓值相同時，則斜坡式類比至數位轉換器120可讀出對應的照度值以及數位數值。
在本實施例中，第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220各別為斜率變化漸增的曲線或分段直線。在本實施例中，在影像感測器110中陣列排列的多個像素單元的每一個可在一次取像操作中分別依據不同的曝光時間來輸出第一取像信號以及第二取像信號。第一取像信號對應於較短曝光時間，並且第二取像信號對應於較長曝光時間。換言之，本實施的影像感測器110可在一次取像操作中取得兩筆圖框資料。
在本實施例中，斜坡式類比至數位轉換器120可依據如圖2A的第一非線性斜率信號的電壓與時間的關係曲線210，來掃描第一取像信號，以取得高光處（照度值較高）的圖像細節（照度值所對應的數位數值），並且作為最高有效位元資料（例如是4 bits）。斜坡式類比至數位轉換器120可依據如圖2B的第二非線性斜率信號的電壓與時間的關係曲線220，來掃描第二取像信號，以取得低光處（照度值較低）的圖像細節，並且作為最低有效位元資料（例如是6 bits）。接著，記憶體140將最高有效位元資料以及最低有效位元資料一併儲存為一筆圖框資料。
值得注意的是，由於人眼對於高光處的圖像細節的分辨能力較低，因此藉由較低的資料量（例如是4 bits）來儲存高光處的圖像細節。相較於高光處的圖框細節，人眼對於低光處的圖像細節的分辨能力較高，因此藉由較高的資料量（例如是6 bits）來儲存低光處的圖框細節。在本實施例中，在較高光處的數位數值可以非線性的方式來分級，雖然影像會有較高的量化雜訊(quantization noise)，但是由於散粒雜訊(shot noise)遠高於量化雜訊(quantization noise)，不影像圖框品質，例如第一非線性斜率信號的電壓與時間的關係曲線210的橫軸（時間）可對應於16級的數位數值（例如是4 bits）。在本實施例中，在較低光處的照度同樣可以非線性的方式來分級，例如第二非線性斜率信號的電壓與時間的關係曲線220的橫軸可對應於64級的數位數值（例如是6 bits）。換言之，本實施例的電子裝置100在透過影像感測器取得圖框的過程中，即可透過第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220來取得等同於壓縮後的多個像素的多個最高有效位元資料以及多個最低有效位元資料，而無需先儲存圖框資料後，再進行資料壓縮。對此，本實施例的電子裝置100可有效節省資料處理時間以及記憶體的儲存空間。
圖3是依照本發明的一實施例的像素單元的示意圖。參考圖3，上述實施例所述的像素單元的等效電路可如圖3所示，但本發明並不限於此。在本實施例中，像素單元300可包括感光二極體PD、第一開關S1以及重置開關S2。感光二極體PD的一端耦接第一開關S1以及重置開關S2。第一開關S1的一端耦接第一端點P1，其中第一端點P1可耦接至ADC，ADC輸出端可耦接至上述的記憶體。重置開關S2的一端耦接第二端點P2，並且第二端點P2可耦接至一放電路徑。具體而言，在一個圖框時間中，感光二極體PD依據感光結果而對應產生感光電荷，並且像素單元400先藉由重置開關接收重置信號，以進行放電。接著，像素單元400再藉由第一開關S1接收讀出信號，以將感光二極體PD所累積的感光電荷輸出至ADC，ADC輸出資料至記憶體儲存。另外，上述的重置信號以及讀出信號可例如是脈衝信號。
圖4是依照本發明的一實施例的操作像素單元的時序圖。參考圖3以及圖4，上述實施例所述的像素單元300的重置開關S2可依據如圖4所示時序圖來接收第一重置信號RS1以及第二重置信號RS2，並且像素單元300的第一開關S1可依據如圖4所示時序圖來接收第一讀出信號RO1以及第二讀出信號RO2。具體而言，在本實施例中，在一次取樣操作中，首先，像素單元300的重置開關S2接收第一重置信號RS1，並且接著第一開關S1接收第一讀出信號RO1，其中第一重置信號RS1與第一讀出信號RO1之間的第一時間差T1為第一曝光時間。接著，像素單元300的重置開關S2接收第二重置信號RS2，並且接著第一開關S1接收第二讀出信號RO2，其中第二重置信號RS2與第二讀出信號RO2之間的第二時間差T2為第二曝光時間。在本實施例中，第一曝光時間短於第二曝光時間。也就是說，像素單元300在一次取樣操作中可依據不同曝光時間來執行兩次讀出（read-out）的動作，以取得上述實施例所述的第一取像信號以及第二取像信號。
圖5是依照本發明的一實施例的取像方法的流程圖。參考圖1以及圖5，本實施例的取像方法可至少適用於圖1實施例的電子裝置100。電子裝置100包括影像感測器110、斜坡式類比至數位轉換器120以及記憶體140。也就是說，電子裝置100可執行以下步驟S510~S550，以實現本實施例的取像方法。在步驟S510中，設置在影像感測器110中陣列排列的多個像素單元在一取像操作中輸出多個第一取像信號以及多個第二取像信號。在步驟S520中，斜坡式類比至數位轉換器120產生第一非線性斜率信號以及第二非線性斜率信號。在步驟S530中，斜坡式類比至數位轉換器120依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料。在步驟S540中，斜坡式類比至數位轉換器依據第二非線性斜率信號以及這些第二取像信號來產生對應於該些像素的多個最低有效位元資料。在步驟S550中，記憶體140一併儲存這些像素的這些最高有效位元資料以及這些像素的該些最低有效位元資料，以產生一圖框資料。
另外，關於本實施例所述的電子裝置100的其他元件特徵或實施細節，可參考上述圖1至圖4實施例的說明而獲致足夠的教示、建議以及實施說明，因此在此不再贅述。
綜上所述，本發明電子裝置以及取樣方法，在一次取樣操作中，可藉由影像感測器的每一個像素單元依據不同曝光時間來執行兩次資料讀出動作，以取得多個第一取像信號以及多個第二取像信號，並且可藉由斜坡式類比至數位轉換器依據第一非線性斜率信號來掃描這些第一取像信號，並且依據第二非線性斜率信號來掃描這些第二取像信號，以取得對應於在一圖框中的每一個像素的最高有效位元資料以及最低有效位元資料。因此，本發明的電子裝置以及取像方法可快速地取得高品質的圖框資料（高動態範圍），並且可有效節省記憶體空間。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧電子裝置
110‧‧‧影像感測器
120‧‧‧斜坡式類比至數位轉換器
130‧‧‧處理器
140‧‧‧記憶體
210、220‧‧‧曲線
300‧‧‧像素單元
P1、P2‧‧‧端點
S1‧‧‧第一開關
S2‧‧‧重置開關
PD‧‧‧感光二極體
RS1、RS2‧‧‧重置信號
RO1、RO2‧‧‧讀出信號
S510~S550‧‧‧步驟
圖1是依照本發明的一實施例的電子裝置的示意圖。 圖2A是依照本發明的一實施例的第一非線性斜率信號的示意圖。 圖2B是依照本發明的一實施例的第二非線性斜率信號的示意圖。 圖3是依照本發明的一實施例的像素單元的示意圖。 圖4是依照本發明的一實施例的操作像素單元的時序圖。 圖5是依照本發明的一實施例的取像方法的流程圖。

Claims (16)

  1. 一種電子裝置，包括： 一影像感測器，包括陣列排列的多個像素單元，並且該些像素單元用以在一取像操作中輸出多個第一取像信號以及多個第二取像信號； 一斜坡式類比至數位轉換器，耦接該影像感測器，並且用以產生一第一非線性斜率信號以及一第二非線性斜率信號，其中該斜坡式類比至數位轉換器依據該第一非線性斜率信號以及該些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據該第二非線性斜率信號以及該些第二取像信號來產生對應於該些像素的多個最低有效位元資料；以及 一記憶體，耦接該斜坡式類比至數位轉換器，用以一併儲存該些像素的該些最高有效位元資料以及該些像素的該些最低有效位元資料，以產生一圖框資料。
  2. 如申請專利範圍第1項所述的電子裝置，其中該些像素單元在該取像操作中依據一第一曝光時間來輸出該些第一取像信號，並且依據一第二曝光時間來輸出該些第二取像信號，其中該第一曝光時間不同於該第二曝光時間。
  3. 如申請專利範圍第2項所述的電子裝置，其中該些像素單元各別包括： 一感光二極體； 一第一開關，耦接該感光二極體；以及 一重置開關，耦接該感光二極體，其中該重置開關用以在該取像操作中接收一第一重置信號以及第二重置信號，並且該第一開關用以在該取像操作中接收一第一讀出信號以及一第二讀出信號， 其中該第一重置信號與該第一讀出信號之間的一第一時間差為該第一曝光時間，並且該第二重置信號與該第二讀出信號之間的一第二時間差為該第二曝光時間。
  4. 如申請專利範圍第2項所述的電子裝置，其中該第一曝光時間不等於該第二曝光時間。
  5. 如申請專利範圍第1項所述的電子裝置，其中該記憶體更用以在該取像操作中僅儲存該圖框資料。
  6. 如申請專利範圍第1項所述的電子裝置，其中該些最高有效位元資料為4位元資料，並且該些最低有效位元資料為6位元資料。
  7. 如申請專利範圍第1項所述的電子裝置，其中該第一非線性斜率信號以及該第二非線性斜率信號各別的一電壓與時間關係曲線為斜率變化漸增的曲線或分段直線。
  8. 如申請專利範圍第1項所述的電子裝置，其中該影像感測器為一指紋感測器。
  9. 一種取像方法，包括： 藉由在一影像感測器中陣列排列的多個像素單元在一取像操作中輸出多個第一取像信號以及多個第二取像信號； 藉由一斜坡式類比至數位轉換器產生一第一非線性斜率信號以及一第二非線性斜率信號； 藉由該斜坡式類比至數位轉換器依據該第一非線性斜率信號以及該些第一取像信號來產生對應於多個像素的多個最高有效位元資料； 藉由該斜坡式類比至數位轉換器依據該第二非線性斜率信號以及該些第二取像信號來產生對應於該些像素的多個最低有效位元資料；以及 藉由一記憶體一併儲存該些像素的該些最高有效位元資料以及該些像素的該些最低有效位元資料，以產生一圖框資料。
  10. 如申請專利範圍第9項所述的取像方法，其中藉由在該影像感測器中陣列排列的該些像素單元在該取像操作中輸出該些第一取像信號以及該些第二取像信號的步驟包括： 藉由該些像素單元在該取像操作中依據一第一曝光時間來輸出該些第一取像信號；以及 藉由該些像素單元在該取像操作中依據一第二曝光時間來輸出該些第二取像信號，其中該第一曝光時間不同於該第二曝光時間。
  11. 如申請專利範圍第10項所述的取像方法，其中該些像素單元各別包括一感光二極體、一第一開關以及一重置開關，並且藉由在該影像感測器中陣列排列的該些像素單元在該取像操作中輸出該些第一取像信號以及該些第二取像信號的步驟包括操作該些像素單元以執行： 藉由該重置開關在該取像操作中接收一第一重置信號以及第二重置信號號；以及 藉由該第一開關在該取像操作中接收一第一讀出信號以及一第二讀出信號， 其中該第一重置信號與該第一讀出信號之間的一第一時間差為該第一曝光時間，並且該第二重置信號與該第二讀出信號之間的一第二時間差為該第二曝光時間。
  12. 如申請專利範圍第10項所述的取像方法，其中該第一曝光時間不等於該第二曝光時間。
  13. 如申請專利範圍第9項所述的取像方法，其中記憶體在該取像操作中僅儲存該圖框資料。
  14. 如申請專利範圍第9項所述的取像方法，其中該些最高有效位元資料為4位元資料，並且該些最低有效位元資料為6位元資料。
  15. 如申請專利範圍第9項所述的取像方法，其中該第一非線性斜率信號以及該第二非線性斜率信號各別的一電壓與時間關係曲線為斜率變化漸增的曲線或分段直線。
  16. 如申請專利範圍第9項所述的取像方法，其中該影像感測器為一指紋感測器。
TW107135211A 2017-10-05 2018-10-05 電子裝置以及取像方法 TWI703865B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/352,833 US10810395B2 (en) 2017-10-05 2019-03-14 Electronic device and image capture method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762568772P 2017-10-05 2017-10-05
US62/568,772 2017-10-05

Publications (2)

Publication Number Publication Date
TW201916674A true TW201916674A (zh) 2019-04-16
TWI703865B TWI703865B (zh) 2020-09-01

Family

ID=66066222

Family Applications (8)

Application Number Title Priority Date Filing Date
TW107123381A TW201915818A (zh) 2017-10-05 2018-07-05 光學識別模組
TW107124245A TW201915542A (zh) 2017-10-05 2018-07-13 光學裝置
TW107125354A TWI728254B (zh) 2017-10-05 2018-07-23 影像資料傳輸系統及影像資料傳輸方法
TW107126012A TWI679539B (zh) 2017-10-05 2018-07-27 主從式系統、指令執行方法與資料存取方法
TW107126454A TWI719332B (zh) 2017-10-05 2018-07-31 曝光方法、電子裝置與主從式系統
TW107135206A TWI667919B (zh) 2017-10-05 2018-10-05 電子裝置以及自動曝光收斂方法
TW107135207A TWI667653B (zh) 2017-10-05 2018-10-05 記憶胞
TW107135211A TWI703865B (zh) 2017-10-05 2018-10-05 電子裝置以及取像方法

Family Applications Before (7)

Application Number Title Priority Date Filing Date
TW107123381A TW201915818A (zh) 2017-10-05 2018-07-05 光學識別模組
TW107124245A TW201915542A (zh) 2017-10-05 2018-07-13 光學裝置
TW107125354A TWI728254B (zh) 2017-10-05 2018-07-23 影像資料傳輸系統及影像資料傳輸方法
TW107126012A TWI679539B (zh) 2017-10-05 2018-07-27 主從式系統、指令執行方法與資料存取方法
TW107126454A TWI719332B (zh) 2017-10-05 2018-07-31 曝光方法、電子裝置與主從式系統
TW107135206A TWI667919B (zh) 2017-10-05 2018-10-05 電子裝置以及自動曝光收斂方法
TW107135207A TWI667653B (zh) 2017-10-05 2018-10-05 記憶胞

Country Status (3)

Country Link
US (9) US10609296B1 (zh)
CN (9) CN109638632A (zh)
TW (8) TW201915818A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110944125A (zh) * 2019-11-06 2020-03-31 西安理工大学 一种提高cmos图像传感器对比度的非线性列级adc及方法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI716142B (zh) * 2019-10-08 2021-01-11 大陸商廣州印芯半導體技術有限公司 光學識別模組
CN110503044A (zh) * 2018-12-03 2019-11-26 神盾股份有限公司 指纹传感器及其指纹感测方法
EP3796208B1 (en) * 2018-12-14 2023-03-15 Shenzhen Goodix Technology Co., Ltd. Fingerprint recognition apparatus and electronic device
US11682230B2 (en) * 2019-03-07 2023-06-20 Novatek Microelectronics Corp. Fingerprint signal processing circuit and method for signal compensation in analog front-end
EP3944628A4 (en) * 2019-03-18 2023-02-22 Hanwha Techwin Co., Ltd. CAMERA FOR ANALYZING IMAGES BASED ON ARTIFICIAL INTELLIGENCE AND OPERATING METHODS THEREOF
WO2020227986A1 (zh) * 2019-05-15 2020-11-19 深圳市汇顶科技股份有限公司 图像采集的装置、方法和电子设备
CN110164307B (zh) * 2019-05-23 2021-01-26 厦门天马微电子有限公司 一种内置有指纹识别感应器的显示装置
KR20200137079A (ko) 2019-05-28 2020-12-09 삼성디스플레이 주식회사 지문 센서 및 이를 포함하는 표시 장치
JP7405826B2 (ja) * 2019-06-12 2023-12-26 京東方科技集團股▲ふん▼有限公司 紋様画像取得方法、紋様画像取得回路及び表示パネル
TWI748460B (zh) * 2019-06-21 2021-12-01 大陸商廣州印芯半導體技術有限公司 飛時測距裝置及飛時測距方法
WO2021035451A1 (zh) * 2019-08-23 2021-03-04 深圳市汇顶科技股份有限公司 指纹检测装置、方法和电子设备
CN110445012A (zh) * 2019-08-01 2019-11-12 浙江舜宇光学有限公司 发光模块、其制备方法以及具有其的深度探测装置
CN211653679U (zh) * 2019-09-22 2020-10-09 神盾股份有限公司 指纹感测模块及电子装置
US11301708B2 (en) * 2019-10-01 2022-04-12 Novatek Microelectronics Corp. Image sensing circuit and method
CN112766017A (zh) * 2019-10-21 2021-05-07 广州印芯半导体技术有限公司 光学识别模块
CN110970454B (zh) * 2019-11-28 2022-03-15 苏州晶方半导体科技股份有限公司 生物特征识别芯片的封装结构
CN110867165B (zh) * 2019-11-29 2021-10-15 厦门天马微电子有限公司 一种显示面板及显示装置
KR20220097967A (ko) * 2019-11-29 2022-07-08 엘지전자 주식회사 방사선 디텍터 및 이를 이용한 방사선 촬영 방법
US11062110B2 (en) * 2019-12-13 2021-07-13 Novatek Microelectronics Corp. Fingerprint detection device, method and non-transitory computer-readable medium for operating the same
TWI727550B (zh) * 2019-12-13 2021-05-11 大陸商廣州印芯半導體技術有限公司 光學識別模組
CN111064073A (zh) * 2019-12-26 2020-04-24 常州纵慧芯光半导体科技有限公司 一种激光器及其制备方法及其应用
CN211857087U (zh) * 2020-02-24 2020-11-03 宁波激智科技股份有限公司 一种减干涉准直膜
CN113796853A (zh) * 2020-06-16 2021-12-17 广州印芯半导体技术有限公司 光学影像比较系统及其比较方法
US11327907B2 (en) * 2020-07-08 2022-05-10 Macronix International Co., Ltd. Methods and apparatus for improving SPI continuous read
US11687472B2 (en) 2020-08-20 2023-06-27 Global Unichip Corporation Interface for semiconductor device and interfacing method thereof
US11699683B2 (en) 2020-08-20 2023-07-11 Global Unichip Corporation Semiconductor device in 3D stack with communication interface and managing method thereof
US11031923B1 (en) * 2020-08-20 2021-06-08 Global Unichip Corporation Interface device and interface method for 3D semiconductor device
US11675731B2 (en) 2020-08-20 2023-06-13 Global Unichip Corporation Data protection system and method thereof for 3D semiconductor device
US11144485B1 (en) 2020-08-20 2021-10-12 Global Unichip Corporation Interface for semiconductor device with symmetric bond pattern and method for arranging interface thereof
CN112104802B (zh) * 2020-08-21 2021-07-20 深圳市睿联技术股份有限公司 一种摄像电路及摄像装置
US20220067323A1 (en) * 2020-08-27 2022-03-03 Au Optronics Corporation Sensing device substrate and display apparatus having the same
CN114328328B (zh) * 2020-09-30 2023-11-10 创意电子股份有限公司 用于三维半导体器件的接口器件及接口方法
CN112511772A (zh) * 2020-10-28 2021-03-16 深圳奥辰光电科技有限公司 一种图像传感器、增强图像传感器线性的方法及深度相机
CN114826811A (zh) * 2021-01-28 2022-07-29 南宁富桂精密工业有限公司 数据传输方法及其系统
US11398102B1 (en) * 2021-03-29 2022-07-26 Innolux Corporation Method for recognizing fingerprint
US11798309B2 (en) * 2021-04-15 2023-10-24 Novatek Microelectronics Corp. Fingerprint identification method for panel, electronic device, and control circuit
CN115529828A (zh) * 2021-04-26 2022-12-27 泉州三安半导体科技有限公司 一种发光装置
CN114359985A (zh) * 2021-12-31 2022-04-15 深圳市汇顶科技股份有限公司 指纹识别的方法、装置和电子设备
TWI818536B (zh) * 2022-05-06 2023-10-11 圓展科技股份有限公司 無線攝影機的通訊方法及可插拔裝置

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1249616B (it) * 1991-05-30 1995-03-09 Sgs Thomson Microelectronics Circuito di precarica di bit line per la lettura di una cella di memoria eprom.
US5805496A (en) * 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
FR2775091B1 (fr) * 1998-02-16 2000-04-28 Matra Communication Procede de transfert de donnees en serie, et interface de bus serie synchrone mettant en oeuvre un tel procede
JP3326560B2 (ja) * 2000-03-21 2002-09-24 日本テキサス・インスツルメンツ株式会社 半導体メモリ装置
ATE506807T1 (de) * 2001-06-18 2011-05-15 Casio Computer Co Ltd Photosensorsystem und ansteuerungsverfahren dafür
US7233350B2 (en) * 2002-01-05 2007-06-19 Candela Microsystems, Inc. Image sensor with interleaved image output
US7265784B1 (en) * 2002-08-19 2007-09-04 Pixim, Inc. Image processor with noise reduction circuit
TW562991B (en) * 2002-11-20 2003-11-21 Novatek Microelectronics Corp Fast convergence method for the appropriate exposure value
JP4219663B2 (ja) * 2002-11-29 2009-02-04 株式会社ルネサステクノロジ 半導体記憶装置及び半導体集積回路
CN100337156C (zh) * 2002-12-05 2007-09-12 联咏科技股份有限公司 适当曝光值的快速收敛方法
CN2609064Y (zh) * 2003-02-28 2004-03-31 光宝科技股份有限公司 名片扫描仪及其传输模块
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
JP4136793B2 (ja) * 2003-05-29 2008-08-20 キヤノン株式会社 撮像装置および撮像装置の制御方法
US7483058B1 (en) * 2003-08-04 2009-01-27 Pixim, Inc. Video imaging system including a digital image sensor and a digital signal processor
US7446812B2 (en) * 2004-01-13 2008-11-04 Micron Technology, Inc. Wide dynamic range operations for imaging
US7292232B2 (en) * 2004-04-30 2007-11-06 Microsoft Corporation Data input devices and methods for detecting movement of a tracking surface by a laser speckle pattern
US7084667B2 (en) * 2004-07-13 2006-08-01 International Business Machines Corporation Low leakage monotonic CMOS logic
US7342256B2 (en) * 2004-07-16 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Display device mounted with read function and electric appliance
JP4498270B2 (ja) * 2005-11-30 2010-07-07 株式会社バンダイナムコゲームス プログラム、情報記憶媒体、写真印刷装置及び写真印刷方法
KR100665853B1 (ko) * 2005-12-26 2007-01-09 삼성전자주식회사 고집적 스태이틱 랜덤 억세스 메모리에 채용하기 적합한적층 메모리 셀
JP5168837B2 (ja) * 2006-07-27 2013-03-27 ソニー株式会社 画像処理装置、画像処理方法およびプログラム
CN200986927Y (zh) * 2006-09-15 2007-12-05 林三宝 具有微光学结构的发光二极管
JP4843461B2 (ja) * 2006-11-13 2011-12-21 株式会社東芝 固体撮像装置
CN100573491C (zh) * 2006-12-15 2009-12-23 凌阳科技股份有限公司 串行传输控制器与串行传输解码器及其串行传输方法
CN100480830C (zh) * 2007-01-30 2009-04-22 北京中星微电子有限公司 一种逆光检测方法、逆光补偿终止检测方法及相应装置
CN100498749C (zh) * 2007-04-12 2009-06-10 威盛电子股份有限公司 串行外围接口数据传输方法及串行外围接口数据传输系统
JP4470957B2 (ja) * 2007-04-26 2010-06-02 ブラザー工業株式会社 画像処理システム及び画像読取装置
DE102007024737A1 (de) * 2007-05-25 2008-11-27 Robert Bosch Gmbh Datenübertragungsverfahren zwischen Master- und Slave-Einrichtungen
US7920409B1 (en) * 2007-06-05 2011-04-05 Arizona Board Of Regents For And On Behalf Of Arizona State University SRAM cell with intrinsically high stability and low leakage
TWI334547B (en) * 2007-06-07 2010-12-11 Via Tech Inc System and method for serial peripheral interface data transmission
US20090006911A1 (en) * 2007-06-28 2009-01-01 Mediatek Inc. Data replacement processing method
US8103936B2 (en) * 2007-10-17 2012-01-24 Micron Technology, Inc. System and method for data read of a synchronous serial interface NAND
US8429329B2 (en) * 2007-10-17 2013-04-23 Micron Technology, Inc. Serial interface NAND
US9584710B2 (en) * 2008-02-28 2017-02-28 Avigilon Analytics Corporation Intelligent high resolution video system
US20100118153A1 (en) * 2008-11-12 2010-05-13 Xiaoguang Yu Apparatus and methods for controlling image sensors
US7849229B2 (en) * 2008-11-25 2010-12-07 Spansion Llc SPI addressing beyond 24-bits
US8156274B2 (en) * 2009-02-02 2012-04-10 Standard Microsystems Corporation Direct slave-to-slave data transfer on a master-slave bus
JP2010263305A (ja) * 2009-04-30 2010-11-18 Fujifilm Corp 撮像装置及びその駆動方法
CN102023945B (zh) * 2009-09-22 2012-03-28 鸿富锦精密工业（深圳）有限公司 基于串行外围设备接口总线的设备及其数据传输方法
CN101950280B (zh) * 2009-09-30 2012-11-14 威盛电子股份有限公司 产生多个串行总线芯片选择的方法
US20110078350A1 (en) * 2009-09-30 2011-03-31 Via Technologies, Inc. Method for generating multiple serial bus chip selects using single chip select signal and modulation of clock signal frequency
US8176209B2 (en) * 2009-11-05 2012-05-08 Electronics And Telecommunications Research Institute Data communication system
CN102097050B (zh) * 2009-12-11 2016-03-09 康佳集团股份有限公司 一种实现显示信号无缝切换的装置和方法
KR20110076729A (ko) * 2009-12-18 2011-07-06 삼성전자주식회사 전자 셔터를 이용한 다단계 노출 이미지 획득 방법 및 이를 이용한 촬영 장치
CN102104641A (zh) * 2009-12-18 2011-06-22 深圳富泰宏精密工业有限公司 手机及其实现360度拍照的方法
US8327052B2 (en) * 2009-12-23 2012-12-04 Spansion Llc Variable read latency on a serial memory bus
TWI406135B (zh) * 2010-03-09 2013-08-21 Nuvoton Technology Corp 資料傳輸系統與可編程序列周邊介面控制器
CN102200864B (zh) * 2010-03-26 2013-08-14 原相科技股份有限公司 光学式触控装置
US8310584B2 (en) * 2010-04-29 2012-11-13 Victory Gain Group Corporation Image sensing device having thin thickness
CN101841624A (zh) * 2010-05-17 2010-09-22 北京思比科微电子技术股份有限公司 图像传感器数据传输方法
US8325890B2 (en) * 2010-06-06 2012-12-04 Apple Inc. Auto exposure techniques for variable lighting conditions
JP2012008385A (ja) * 2010-06-25 2012-01-12 Ricoh Co Ltd 画像形成装置および画像形成方法
US8422272B2 (en) * 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8433838B2 (en) * 2010-09-17 2013-04-30 International Business Machines Corporation Remote multiplexing devices on a serial peripheral interface bus
CN102035530A (zh) * 2010-10-15 2011-04-27 北京工业大学 用于高性能vlsi的最优保持管多米诺电路
TWI507031B (zh) * 2010-10-15 2015-11-01 Altek Corp 影像處理方法
US20120097985A1 (en) * 2010-10-21 2012-04-26 Wen-Huang Liu Light Emitting Diode (LED) Package And Method Of Fabrication
KR101705045B1 (ko) * 2010-11-09 2017-02-10 삼성전자주식회사 아날로그 투 디지털 컨버터, 이를 포함하는 이미지 센서 및 아날로그 투 디지털 변환 방법
CN102469248B (zh) * 2010-11-12 2016-03-02 华晶科技股份有限公司 影像拍摄装置及其影像合成方法
US9047178B2 (en) * 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
CN102098441B (zh) * 2010-12-16 2016-09-07 深圳市经纬科技有限公司 基于spi接口的图像数据传输方法及照相设备
CN102117342A (zh) * 2011-01-21 2011-07-06 中国科学院上海技术物理研究所 基于PCI Express总线的多波段红外图像实时采集系统及方法
JP5655626B2 (ja) * 2011-02-24 2015-01-21 ソニー株式会社 画像処理装置、および画像処理方法、並びにプログラム
CN202049481U (zh) * 2011-03-17 2011-11-23 冠捷投资有限公司 具有主从关系的感测结构
JP5713752B2 (ja) * 2011-03-28 2015-05-07 キヤノン株式会社 画像処理装置、及びその制御方法
US9077917B2 (en) * 2011-06-09 2015-07-07 Apple Inc. Image sensor having HDR capture capability
US8576653B2 (en) * 2011-07-01 2013-11-05 United Microelectronics Corp. Hidden refresh method and operating method for pseudo SRAM
JP5907176B2 (ja) * 2011-12-28 2016-04-26 株式会社ニコン 撮像装置
TWI450159B (zh) * 2012-03-02 2014-08-21 Pixart Imaging Inc Optical touch device, passive touch system and its input detection method
US9208826B2 (en) * 2012-03-30 2015-12-08 Sharp Kabushiki Kaisha Semiconductor storage device with two control lines
US9274997B2 (en) * 2012-05-02 2016-03-01 Smsc Holdings S.A.R.L. Point-to-point serial peripheral interface for data communication between devices configured in a daisy-chain
US8943250B2 (en) * 2012-08-20 2015-01-27 General Electric Systems and methods for concatenating multiple devices
US9003091B2 (en) * 2012-10-18 2015-04-07 Hewlett-Packard Development Company, L.P. Flow control for a Serial Peripheral Interface bus
TW201418992A (zh) * 2012-11-06 2014-05-16 Megawin Technology Co Ltd 序列周邊介面主裝置之資料傳輸控制方法及裝置
CN103092806A (zh) * 2013-01-18 2013-05-08 青岛海信宽带多媒体技术有限公司 基于spi数据传输时序的数据传输方法和系统
KR101444063B1 (ko) * 2013-03-22 2014-09-26 주식회사 슈프리마 다중 노출을 이용한 광학식 지문 인식 방법 및 장치
CN104253188A (zh) * 2013-06-27 2014-12-31 展晶科技(深圳)有限公司 发光二极管元件的制造方法
JP6372488B2 (ja) * 2013-07-04 2018-08-15 株式会社ニコン 電子機器
TWI631854B (zh) * 2013-08-05 2018-08-01 日商新力股份有限公司 Conversion device, imaging device, electronic device, conversion method
CN103595503B (zh) * 2013-10-25 2016-08-17 福建升腾资讯有限公司 一种基于串口装置的频率编解码通讯系统
CN104714908B (zh) * 2013-12-13 2017-12-19 上海华虹集成电路有限责任公司 支持主从模式的spi接口
JP6519095B2 (ja) * 2013-12-19 2019-05-29 カシオ計算機株式会社 コンテンツ出力システム、コンテンツ出力装置、コンテンツ出力方法及びプログラム
US9402039B2 (en) * 2014-01-10 2016-07-26 Omnivision Technologies, Inc. Dual conversion gain high dynamic range sensor
CN103838700A (zh) * 2014-02-20 2014-06-04 江苏理工学院 电平复用控制串行通信装置及其通信方法
KR102149187B1 (ko) * 2014-02-21 2020-08-28 삼성전자주식회사 전자 장치와, 그의 제어 방법
CN103888693B (zh) * 2014-03-31 2017-06-13 广东威创视讯科技股份有限公司 图像传输装置
EP2938064B1 (en) * 2014-04-24 2016-10-12 Axis AB Method and apparatus for determining exposure setting
JP6478488B2 (ja) * 2014-06-18 2019-03-06 キヤノン株式会社 Ａｄ変換装置及び固体撮像装置
CN105208294A (zh) * 2014-06-20 2015-12-30 中兴通讯股份有限公司 一种拍照的方法及装置
JP6454490B2 (ja) * 2014-07-17 2019-01-16 ルネサスエレクトロニクス株式会社 半導体装置及びランプ信号の制御方法
JP6552336B2 (ja) * 2014-08-29 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
CN104318205A (zh) * 2014-09-29 2015-01-28 上海箩箕技术有限公司 信息检测显示装置及其检测方法和显示方法
JP2017534859A (ja) * 2014-09-29 2017-11-24 バイオサーフィット、 ソシエダッド アノニマ 位置決めメカニズム
US10732771B2 (en) * 2014-11-12 2020-08-04 Shenzhen GOODIX Technology Co., Ltd. Fingerprint sensors having in-pixel optical sensors
US10114789B2 (en) * 2015-01-08 2018-10-30 Samsung Electronics Co., Ltd. System on chip for packetizing multiple bytes and data processing system including the same
CN105991935B (zh) * 2015-02-15 2019-11-05 比亚迪股份有限公司 曝光控制装置及曝光控制方法
US20160246396A1 (en) * 2015-02-20 2016-08-25 Qualcomm Incorporated Interactive touchscreen and sensor array
JP2016161653A (ja) * 2015-02-27 2016-09-05 富士フイルム株式会社 撮影装置および方法
JP6530064B2 (ja) * 2015-05-26 2019-06-12 日立オートモティブシステムズ株式会社 通信装置および通信システム
CN204695305U (zh) * 2015-06-11 2015-10-07 北京海泰方圆科技有限公司 一种基于复合产品的spi通信接口及该复合产品
EP3657367B1 (en) 2015-06-30 2021-09-29 Huawei Technologies Co., Ltd. Method for unlocking screen by using fingerprint and terminal
TWI576653B (zh) * 2015-07-31 2017-04-01 廣達電腦股份有限公司 曝光控制系統及其方法
US9819889B2 (en) * 2015-08-07 2017-11-14 Omnivision Technologies, Inc. Method and system to implement a stacked chip high dynamic range image sensor
CN105100631B (zh) * 2015-09-08 2019-03-01 Oppo广东移动通信有限公司 一种自动连续间隔拍照、摄像的方法及移动终端
US10003761B2 (en) * 2015-09-10 2018-06-19 Canon Kabushiki Kaisha Imaging device having multiple analog-digital conversion circuits that perform multiple ad conversions for a singular one of a pixel signal
US9990316B2 (en) * 2015-09-21 2018-06-05 Qualcomm Incorporated Enhanced serial peripheral interface
CN205038640U (zh) * 2015-09-25 2016-02-17 河南思维自动化设备股份有限公司 一种解决spi总线通信延时的spi设备
US10157590B1 (en) * 2015-12-15 2018-12-18 Apple Inc. Display with localized brightness adjustment capabilities
CN105578076A (zh) * 2015-12-18 2016-05-11 广东欧珀移动通信有限公司 成像方法、成像装置及电子装置
CN106303269A (zh) * 2015-12-28 2017-01-04 北京智谷睿拓技术服务有限公司 图像采集控制方法和装置、图像采集设备
US9743025B2 (en) * 2015-12-30 2017-08-22 Omnivision Technologies, Inc. Method and system of implementing an uneven timing gap between each image capture in an image sensor
CN106778459B (zh) 2015-12-31 2021-02-12 深圳市汇顶科技股份有限公司 指纹识别的方法及其指纹识别装置
JP6885344B2 (ja) * 2016-01-20 2021-06-16 ソニーグループ株式会社 固体撮像装置およびその駆動方法、並びに電子機器
KR102554495B1 (ko) * 2016-01-22 2023-07-12 에스케이하이닉스 주식회사 수평적 커플링 구조를 갖는 불휘발성 메모리셀 및 이를 이용한 메모리 셀 어레이
US9800807B2 (en) * 2016-02-26 2017-10-24 Intel Corporation Image sensor operation for shutter modulation and high dynamic range
US10043051B2 (en) * 2016-03-07 2018-08-07 Microsoft Technology Licensing, Llc Triggered image sensing with a display
JP6747158B2 (ja) * 2016-08-09 2020-08-26 ソニー株式会社 マルチカメラシステム、カメラ、カメラの処理方法、確認装置および確認装置の処理方法
CN206470775U (zh) * 2016-12-23 2017-09-05 敦捷光电股份有限公司 生物特征辨识装置
EP3565234B1 (en) * 2016-12-27 2023-05-24 Panasonic Intellectual Property Management Co., Ltd. Imaging device, camera, and imaging method
CN106897701B (zh) * 2017-02-27 2019-08-23 京东方科技集团股份有限公司 光学指纹识别模组与显示面板、显示装置
CN107066859A (zh) 2017-03-15 2017-08-18 广东欧珀移动通信有限公司 一种指纹解锁方法及装置
CN107071153B (zh) 2017-03-21 2019-07-02 Oppo广东移动通信有限公司 一种指纹模组模式切换方法及装置
KR102331464B1 (ko) * 2017-04-18 2021-11-29 삼성전자주식회사 디스플레이 영역에 형성된 생체 정보 센싱 영역을 이용한 생체 정보 획득 방법 및 이를 지원하는 전자 장치
CN107135049B (zh) * 2017-04-19 2020-08-14 北京航天自动控制研究所 一种面向离散数据流的可靠异步通信方法
CN107122742B (zh) * 2017-04-27 2019-12-03 上海天马微电子有限公司 一种显示装置及其指纹识别方法、以及电子设备
CN107194326A (zh) 2017-04-28 2017-09-22 广东欧珀移动通信有限公司 指纹采集方法及相关产品
CN107169447A (zh) * 2017-05-12 2017-09-15 贵州中信云联科技有限公司 基于人脸识别的医院自助系统
EP3462731B1 (en) * 2017-09-29 2021-11-10 Canon Kabushiki Kaisha Imaging device, imaging system, and moving body
US10735459B2 (en) * 2017-11-02 2020-08-04 International Business Machines Corporation Service overload attack protection based on selective packet transmission
KR102460750B1 (ko) * 2018-02-13 2022-10-31 삼성전기주식회사 Ois 기능을 갖는 카메라 장치 및 그 통신 방법
JP6753985B2 (ja) * 2018-08-10 2020-09-09 シャープ株式会社 アナログデジタル変換器および固体撮像素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110944125A (zh) * 2019-11-06 2020-03-31 西安理工大学 一种提高cmos图像传感器对比度的非线性列级adc及方法
CN110944125B (zh) * 2019-11-06 2022-02-22 西安理工大学 一种提高cmos图像传感器对比度的非线性列级adc及方法

Also Published As

Publication number Publication date
US20200018986A1 (en) 2020-01-16
US20200111825A1 (en) 2020-04-09
CN109634063B (zh) 2021-06-15
US20200042762A1 (en) 2020-02-06
US10580483B1 (en) 2020-03-03
US10609296B1 (en) 2020-03-31
CN109640010B (zh) 2021-08-13
US20200112664A1 (en) 2020-04-09
CN109639957A (zh) 2019-04-16
US20200045216A1 (en) 2020-02-06
CN109638632A (zh) 2019-04-16
US20200034319A1 (en) 2020-01-30
TW201916672A (zh) 2019-04-16
US10810395B2 (en) 2020-10-20
TWI719332B (zh) 2021-02-21
TW201915542A (zh) 2019-04-16
TWI728254B (zh) 2021-05-21
TWI703865B (zh) 2020-09-01
TW201916670A (zh) 2019-04-16
CN109639957B (zh) 2020-11-13
CN109635794A (zh) 2019-04-16
US10592448B2 (en) 2020-03-17
CN109639988A (zh) 2019-04-16
CN109637565B (zh) 2020-10-20
TW201916673A (zh) 2019-04-16
CN109634883A (zh) 2019-04-16
US20200012837A1 (en) 2020-01-09
CN109857281A (zh) 2019-06-07
CN109640010A (zh) 2019-04-16
US10990781B2 (en) 2021-04-27
CN109639988B (zh) 2020-08-11
CN109634063A (zh) 2019-04-16
US10885296B2 (en) 2021-01-05
CN109637565A (zh) 2019-04-16
CN109634883B (zh) 2023-03-21
TWI667919B (zh) 2019-08-01
TWI679539B (zh) 2019-12-11
TW201915756A (zh) 2019-04-16
US10997386B2 (en) 2021-05-04
TWI667653B (zh) 2019-08-01
US20200028977A1 (en) 2020-01-23
TW201915818A (zh) 2019-04-16
TW201916035A (zh) 2019-04-16

Similar Documents

Publication Publication Date Title
TWI703865B (zh) 電子裝置以及取像方法
TWI357260B (en) Solid state photographing device
US10205904B2 (en) Image sensor capable of correcting noise caused by dark charge of a floating diffusion portion, control method therefor, and image capturing apparatus
US7586523B2 (en) Amplification-type CMOS image sensor of wide dynamic range
JP5978771B2 (ja) 信号処理装置および方法、撮像素子、並びに、撮像装置
US9191596B2 (en) Solid-state imaging device, control method and electronic apparatus to obtain frame difference output values
US9544518B2 (en) Image pickup apparatus and image pickup system with ad converter outputting image data at first resolution in a case where pixel signals are not higher than threshold level and at second resolution in a case where pixel signals are higher than threshold level
US20100045839A1 (en) Image pickup apparatus
JP2011010108A (ja) 撮像制御装置、撮像装置及び撮像制御方法
CN106165401B (zh) 成像元件、增益控制方法和电子设备
US10027919B2 (en) Signal processing apparatus, image capturing apparatus, control apparatus, signal processing method, and control method
CN108605105B (zh) 固体摄像装置以及摄像装置
JP2012075071A (ja) 信号処理装置、画像処理装置、並びに撮影装置
US11637963B2 (en) Image sensor and image processing system comprising the same
JP2017200140A (ja) 撮像素子、撮像装置およびその制御方法
US10051216B2 (en) Imaging apparatus and imaging method thereof using correlated double sampling
WO2020042189A1 (zh) 像素单元、图像传感器及其运行方法、摄像装置
CN103517003B (zh) 固态成像装置及其驱动方法和电子设备
JP2012065309A (ja) 撮像装置
US20030174894A1 (en) Dark frame subtraction using compression
JP2018050234A (ja) 撮像装置及び撮像装置の処理方法
JP4340803B2 (ja) 欠陥感光画素からの誤った画像信号を補正するためのシステム及び方法
US20150029370A1 (en) Solid-state imaging device
JP6213596B2 (ja) 撮像装置
JP2020057883A (ja) 撮像装置