TWI703865B - 電子裝置以及取像方法 - Google Patents

電子裝置以及取像方法 Download PDF

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Publication number
TWI703865B
TWI703865B TW107135211A TW107135211A TWI703865B TW I703865 B TWI703865 B TW I703865B TW 107135211 A TW107135211 A TW 107135211A TW 107135211 A TW107135211 A TW 107135211A TW I703865 B TWI703865 B TW I703865B
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Taiwan
Prior art keywords
bit data
significant bit
image capturing
signal
image
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TW107135211A
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English (en)
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TW201916674A (zh
Inventor
印秉宏
王佳祥
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廣州印芯半導體技術有限公司
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Priority to US16/352,833 priority Critical patent/US10810395B2/en
Publication of TW201916674A publication Critical patent/TW201916674A/zh
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Publication of TWI703865B publication Critical patent/TWI703865B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G02B1/041—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
    • G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/382—Information transfer, e.g. on bus using universal interface adapter
    • G06F13/385—Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
    • G06F13/4291—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/00127—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
    • H04N1/00204—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
    • H04N1/00209—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
    • H04N1/00214—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/21—Intermediate information storage
    • H04N1/2104—Intermediate information storage for one or a few pictures
    • H04N1/2112—Intermediate information storage for one or a few pictures using still video cameras
    • H04N1/2137—Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/66—Remote control of cameras or camera parts, e.g. by remote control devices
    • H04N23/661—Transmitting camera control signals through networks, e.g. control via the Internet
    • H04N23/662—Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/71—Circuitry for evaluating the brightness variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/72—Combination of two or more compensation controls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/743—Bracketing, i.e. taking a series of images with varying exposure conditions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
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    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F2213/0002—Serial port, e.g. RS232C
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness
    • G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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Abstract

本發明提出一種電子裝置以及取像方法。電子裝置包括影像感測器、斜坡式類比至數位轉換器以及記憶體。影像感測器包括陣列排列的多個像素單元，並且這些像素單元在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及這些第二取像信號來產生對應於多些像素的多個最低有效位元資料。記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。

Description

電子裝置以及取像方法
本發明是有關於一種影像感測技術，且特別是有關於一種電子裝置以及取像方法。
隨著影像感測技術的演進，有越來越多的電子產品配置有影像感測功能，例如照片拍攝或指紋感測等功能。然而，為求高品質的影像擷取結果，例如高動態範圍（High Dynamic Range, HDR）的圖框，一般的影像感測器會擷取兩張具有不同曝光程度的圖框，以將明亮區域以及陰影區域加以重疊，以取得一張高動態範圍的圖框。對此，一般的影像感測器會例如先擷取並儲存兩張圖框中的每個像素的資料量分別為10 bits的圖框資料（10 bits+10 bits=20 bits）至記憶體，接著進行資料壓縮（例如將20 bits壓縮為16 bits）。也就是說，傳統取得具有高動態範圍的圖框的方式需要花費較多個影像擷取時間以及影像處理時間，並且還需要花費較多的記憶體空間。有鑑於此，如何取得高品質的圖框，並且可有效節省記憶體空間，以下將提出幾個實施例的解決方案。
本發明提供一種電子裝置以及取像方法，可取得高品質的圖框，並且可有效節省記憶體空間（memory size）。
本發明的電子裝置包括影像感測器、斜坡式類比至數位轉換器以及記憶體。影像感測器包括陣列排列的多個像素單元，並且這些像素單元用以在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器耦接影像感測器。斜坡式類比至數位轉換器用以產生第一非線性斜率信號以及第二非線性斜率信號。斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及這些第二取像信號來產生對應於這些像素的多個最低有效位元資料。處理器耦接斜坡式類比至數位轉換器。記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。
本發明的取像方法包括以下步驟：藉由在影像感測器中陣列排列的多個像素單元在取像操作中輸出多個第一取像信號以及多個第二取像信號；藉由斜坡式類比至數位轉換器產生第一非線性斜率信號以及第二非線性斜率信號；藉由斜坡式類比至數位轉換器依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料；藉由斜坡式類比至數位轉換器依據第二非線性斜率信號以及這些第二取像信號來產生對應於這些像素的多個最低有效位元資料；以及藉由記憶體一併儲存這些像素的這些最高有效位元資料以及這些像素的這些最低有效位元資料，以產生圖框資料。
基於上述，本發明的電子裝置以及取像方法可藉由斜坡式類比至數位轉換器依據第一非線性斜率信號以及多個第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據第二非線性斜率信號以及多個第二取像信號來產生對應於多個像素的多個最低有效位元資料，其中這些像素的這些最高有效位元資料以及這些最低有效位元資料可合併為一圖框資料。因此，本發明的電子裝置以及取像方法可取得高品質的圖框資料（高動態範圍），並且可有效節省記憶體空間。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
為了使本發明之內容可以被更容易明瞭，以下特舉實施例做為本發明確實能夠據以實施的範例。另外，凡可能之處，在圖式及實施方式中使用相同標號的元件/構件/步驟，係代表相同或類似部件。
圖1是依照本發明的一實施例的電子裝置的示意圖。參考圖1，電子裝置100包括影像感測器110、斜坡式類比至數位轉換器（ramp Analog to Digital Converter, ramp ADC）120以及記憶體140。影像感測器110耦接斜坡式類比至數位轉換器120。斜坡式類比至數位轉換器120耦接記憶體140。在本實施例中，影像感測器110可包括陣列排列的多個像素單元，並且這些像素單元用以在取像操作中輸出多個第一取像信號以及多個第二取像信號。斜坡式類比至數位轉換器120可依據第一非線性斜率（non-linear ramp）信號以及第二非線性斜率信號來比對這些第一取像信號以及這些第二取像信號，以取得對應於多個像素的多個最高有效位元資料（Most Significant Bit, MSB）以及多個最低有效位元資料（Least Significant Bit, LSB）。處理器130可合併這些像素的這些最高有效位元資料以及這些最低有效位元資料為一筆圖框資料，並且記憶體140在取像操作中僅需儲存此筆圖框資料。
舉例而言，在一實施例中，斜坡式類比至數位轉換器120可包括比較器。對於圖框中的每一個像素而言，上述的取像信號可輸入至比較器的一端，並且非線性斜率信號可輸入至比較器的另一端。非線性斜率信號的電壓值隨著時間變化而增加，直到與取像信號的電壓值相同時，斜坡式類比至數位轉換器120即可讀出此像素的照度值（Luminance）所對應的數位數值（Digital Number, DN）。
在本實施例中，電子裝置100可為一積體電路或一種攜帶式電子產品，例如行動手機（Mobile phone）、平板（Tablet）或筆記型電腦（Laptop）等，本發明並不加以限制。在本實施例中，影像感測器110可為COMS影像感測器（CMOS Image Sensor, CIS）或感光耦合元件（Charge Coupled Device, CCD）。在本實施例中，斜坡式類比至數位轉換器120可產生第一非線性斜率信號以及第二非線性斜率信號，並且藉由第一非線性斜率信號以及第二非線性斜率信號來比對經由影像感測器110取得的這些第一取像信號以及這些第二取像信號，來取得對應於多個像素的多個最高有效位元資料以及多個最低有效位元資料。
在本實施例中，記憶體140用以儲存本發明各實施例所述的圖框資料。
在一實施例中，電子裝置100可為一種具有屏下光學指紋辨識技術（Under-display optical fingerprint）功能的積體電路或攜帶式電子產品，並且影像感測器110可為指紋感測器。對此，電子裝置100可用於執行指紋感測，並且影像感測器110可依據不同曝光時間來取得兩個指紋取像信號，並且斜坡式類比至數位轉換器120依據第一非線性斜率信號以及第二非線性斜率信號來掃描此兩個指紋取像信號，以獲得對應於在一指紋圖框當中的多個像素的多個最高有效位元資料以及多個最低有效位元資料。因此，在此一實施例中，電子裝置100可取得高品質的指紋圖框（高動態範圍），並且可有效節省記憶體空間。
圖2A是依照本發明的一實施例的第一非線性斜率信號的示意圖。圖2B是依照本發明的一實施例的第二非線性斜率信號的示意圖。參考圖1、圖2A以及圖2B，圖2A以及圖2B為表示非線性斜率信號的電壓與時間的關係曲線。在本實施例中，第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220係用於掃描像素單元提供的第一取樣信號以及第二取樣信號。當第一取樣信號與第一非線性斜率信號的電壓與時間的關係曲線210的某一點的電壓值相同時，則斜坡式類比至數位轉換器120可讀出對應的照度值以及數位數值。同理，當第二取樣信號與第二非線性斜率信號的電壓與時間的關係曲線220的某一點的電壓值相同時，則斜坡式類比至數位轉換器120可讀出對應的照度值以及數位數值。
在本實施例中，第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220各別為斜率變化漸增的曲線或分段直線。在本實施例中，在影像感測器110中陣列排列的多個像素單元的每一個可在一次取像操作中分別依據不同的曝光時間來輸出第一取像信號以及第二取像信號。第一取像信號對應於較短曝光時間，並且第二取像信號對應於較長曝光時間。換言之，本實施的影像感測器110可在一次取像操作中取得兩筆圖框資料。
在本實施例中，斜坡式類比至數位轉換器120可依據如圖2A的第一非線性斜率信號的電壓與時間的關係曲線210，來掃描第一取像信號，以取得高光處（照度值較高）的圖像細節（照度值所對應的數位數值），並且作為最高有效位元資料（例如是4 bits）。斜坡式類比至數位轉換器120可依據如圖2B的第二非線性斜率信號的電壓與時間的關係曲線220，來掃描第二取像信號，以取得低光處（照度值較低）的圖像細節，並且作為最低有效位元資料（例如是6 bits）。接著，記憶體140將最高有效位元資料以及最低有效位元資料一併儲存為一筆圖框資料。
值得注意的是，由於人眼對於高光處的圖像細節的分辨能力較低，因此藉由較低的資料量（例如是4 bits）來儲存高光處的圖像細節。相較於高光處的圖框細節，人眼對於低光處的圖像細節的分辨能力較高，因此藉由較高的資料量（例如是6 bits）來儲存低光處的圖框細節。在本實施例中，在較高光處的數位數值可以非線性的方式來分級，雖然影像會有較高的量化雜訊(quantization noise)，但是由於散粒雜訊(shot noise)遠高於量化雜訊(quantization noise)，不影像圖框品質，例如第一非線性斜率信號的電壓與時間的關係曲線210的橫軸（時間）可對應於16級的數位數值（例如是4 bits）。在本實施例中，在較低光處的照度同樣可以非線性的方式來分級，例如第二非線性斜率信號的電壓與時間的關係曲線220的橫軸可對應於64級的數位數值（例如是6 bits）。換言之，本實施例的電子裝置100在透過影像感測器取得圖框的過程中，即可透過第一非線性斜率信號的電壓與時間的關係曲線210以及第二非線性斜率信號的電壓與時間的關係曲線220來取得等同於壓縮後的多個像素的多個最高有效位元資料以及多個最低有效位元資料，而無需先儲存圖框資料後，再進行資料壓縮。對此，本實施例的電子裝置100可有效節省資料處理時間以及記憶體的儲存空間。
圖3是依照本發明的一實施例的像素單元的示意圖。參考圖3，上述實施例所述的像素單元的等效電路可如圖3所示，但本發明並不限於此。在本實施例中，像素單元300可包括感光二極體PD、第一開關S1以及重置開關S2。感光二極體PD的一端耦接第一開關S1以及重置開關S2。第一開關S1的一端耦接第一端點P1，其中第一端點P1可耦接至ADC，ADC輸出端可耦接至上述的記憶體。重置開關S2的一端耦接第二端點P2，並且第二端點P2可耦接至一放電路徑。具體而言，在一個圖框時間中，感光二極體PD依據感光結果而對應產生感光電荷，並且像素單元400先藉由重置開關接收重置信號，以進行放電。接著，像素單元400再藉由第一開關S1接收讀出信號，以將感光二極體PD所累積的感光電荷輸出至ADC，ADC輸出資料至記憶體儲存。另外，上述的重置信號以及讀出信號可例如是脈衝信號。
圖4是依照本發明的一實施例的操作像素單元的時序圖。參考圖3以及圖4，上述實施例所述的像素單元300的重置開關S2可依據如圖4所示時序圖來接收第一重置信號RS1以及第二重置信號RS2，並且像素單元300的第一開關S1可依據如圖4所示時序圖來接收第一讀出信號RO1以及第二讀出信號RO2。具體而言，在本實施例中，在一次取樣操作中，首先，像素單元300的重置開關S2接收第一重置信號RS1，並且接著第一開關S1接收第一讀出信號RO1，其中第一重置信號RS1與第一讀出信號RO1之間的第一時間差T1為第一曝光時間。接著，像素單元300的重置開關S2接收第二重置信號RS2，並且接著第一開關S1接收第二讀出信號RO2，其中第二重置信號RS2與第二讀出信號RO2之間的第二時間差T2為第二曝光時間。在本實施例中，第一曝光時間短於第二曝光時間。也就是說，像素單元300在一次取樣操作中可依據不同曝光時間來執行兩次讀出（read-out）的動作，以取得上述實施例所述的第一取像信號以及第二取像信號。
圖5是依照本發明的一實施例的取像方法的流程圖。參考圖1以及圖5，本實施例的取像方法可至少適用於圖1實施例的電子裝置100。電子裝置100包括影像感測器110、斜坡式類比至數位轉換器120以及記憶體140。也就是說，電子裝置100可執行以下步驟S510~S550，以實現本實施例的取像方法。在步驟S510中，設置在影像感測器110中陣列排列的多個像素單元在一取像操作中輸出多個第一取像信號以及多個第二取像信號。在步驟S520中，斜坡式類比至數位轉換器120產生第一非線性斜率信號以及第二非線性斜率信號。在步驟S530中，斜坡式類比至數位轉換器120依據第一非線性斜率信號以及這些第一取像信號來產生對應於多個像素的多個最高有效位元資料。在步驟S540中，斜坡式類比至數位轉換器依據第二非線性斜率信號以及這些第二取像信號來產生對應於該些像素的多個最低有效位元資料。在步驟S550中，記憶體140一併儲存這些像素的這些最高有效位元資料以及這些像素的該些最低有效位元資料，以產生一圖框資料。
另外，關於本實施例所述的電子裝置100的其他元件特徵或實施細節，可參考上述圖1至圖4實施例的說明而獲致足夠的教示、建議以及實施說明，因此在此不再贅述。
綜上所述，本發明電子裝置以及取樣方法，在一次取樣操作中，可藉由影像感測器的每一個像素單元依據不同曝光時間來執行兩次資料讀出動作，以取得多個第一取像信號以及多個第二取像信號，並且可藉由斜坡式類比至數位轉換器依據第一非線性斜率信號來掃描這些第一取像信號，並且依據第二非線性斜率信號來掃描這些第二取像信號，以取得對應於在一圖框中的每一個像素的最高有效位元資料以及最低有效位元資料。因此，本發明的電子裝置以及取像方法可快速地取得高品質的圖框資料（高動態範圍），並且可有效節省記憶體空間。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧電子裝置110‧‧‧影像感測器120‧‧‧斜坡式類比至數位轉換器130‧‧‧處理器140‧‧‧記憶體210、220‧‧‧曲線300‧‧‧像素單元P1、P2‧‧‧端點S1‧‧‧第一開關S2‧‧‧重置開關PD‧‧‧感光二極體RS1、RS2‧‧‧重置信號RO1、RO2‧‧‧讀出信號S510~S550‧‧‧步驟
圖1是依照本發明的一實施例的電子裝置的示意圖。 圖2A是依照本發明的一實施例的第一非線性斜率信號的示意圖。 圖2B是依照本發明的一實施例的第二非線性斜率信號的示意圖。 圖3是依照本發明的一實施例的像素單元的示意圖。 圖4是依照本發明的一實施例的操作像素單元的時序圖。 圖5是依照本發明的一實施例的取像方法的流程圖。
100‧‧‧電子裝置
110‧‧‧影像感測器
120‧‧‧斜坡式類比至數位轉換器
140‧‧‧記憶體

Claims (16)

  1. 一種電子裝置，包括：一影像感測器，包括陣列排列的多個像素單元，並且該些像素單元用以在一取像操作中輸出多個第一取像信號以及多個第二取像信號，一斜坡式類比至數位轉換器，耦接該影像感測器，並且用以產生一第一非線性斜率信號以及一第二非線性斜率信號，其中該斜坡式類比至數位轉換器依據該第一非線性斜率信號以及該些第一取像信號來產生對應於多個像素的多個最高有效位元資料，並且依據該第二非線性斜率信號以及該些第二取像信號來產生對應於該些像素的多個最低有效位元資料；以及一記憶體，耦接該斜坡式類比至數位轉換器，用以一併儲存該些像素的該些最高有效位元資料以及該些像素的該些最低有效位元資料，以產生一圖框資料，其中該圖框資料用於呈現具有一第一照度區域與一第二照度區域的圖像，該圖框資料所包括的該些最高有效位元資料僅用於儲存該第一照度區域的圖像細節，該圖框資料所包括的該些最低有效位元資料僅用於儲存該第二照度區域的圖像細節，且該第一照度區域的照度值高於該第二照度區域的照度值，其中該圖框資料所包括的該些最高有效位元資料相較於該圖框資料所包括的該些最低有效位元資料具有較少的位元數量。
  2. 如申請專利範圍第1項所述的電子裝置，其中該些像素單元在該取像操作中依據一第一曝光時間來輸出該些第一取像信號，並且依據一第二曝光時間來輸出該些第二取像信號，其中該第一曝光時間不同於該第二曝光時間。
  3. 如申請專利範圍第2項所述的電子裝置，其中該些像素單元各別包括：一感光二極體；一第一開關，耦接該感光二極體；以及一重置開關，耦接該感光二極體，其中該重置開關用以在該取像操作中接收一第一重置信號以及第二重置信號，並且該第一開關用以在該取像操作中接收一第一讀出信號以及一第二讀出信號，其中該第一重置信號與該第一讀出信號之間的一第一時間差為該第一曝光時間，並且該第二重置信號與該第二讀出信號之間的一第二時間差為該第二曝光時間。
  4. 如申請專利範圍第2項所述的電子裝置，其中該第一曝光時間不等於該第二曝光時間。
  5. 如申請專利範圍第1項所述的電子裝置，其中該記憶體更用以在該取像操作中僅儲存該圖框資料。
  6. 如申請專利範圍第1項所述的電子裝置，其中該些最高有效位元資料為4位元資料，並且該些最低有效位元資料為6位元資料。
  7. 如申請專利範圍第1項所述的電子裝置，其中該第一非線性斜率信號以及該第二非線性斜率信號各別的一電壓與時間關係曲線為斜率變化漸增的曲線或分段直線。
  8. 如申請專利範圍第1項所述的電子裝置，其中該影像感測器為一指紋感測器。
  9. 一種取像方法，包括：藉由在一影像感測器中陣列排列的多個像素單元在一取像操作中輸出多個第一取像信號以及多個第二取像信號；藉由一斜坡式類比至數位轉換器產生一第一非線性斜率信號以及一第二非線性斜率信號；藉由該斜坡式類比至數位轉換器依據該第一非線性斜率信號以及該些第一取像信號來產生對應於多個像素的多個最高有效位元資料；藉由該斜坡式類比至數位轉換器依據該第二非線性斜率信號以及該些第二取像信號來產生對應於該些像素的多個最低有效位元資料；以及藉由一記憶體一併儲存該些像素的該些最高有效位元資料以及該些像素的該些最低有效位元資料，以產生一圖框資料，其中該圖框資料用於呈現具有一第一照度區域與一第二照度區域的圖像，該圖框資料所包括的該些最高有效位元資料僅用於儲存該第一照度區域的圖像細節，該圖框資料所包括的該些最低有效位元資料僅用於儲存該第二照度區域的圖像細節，且該第一 照度區域的照度值高於該第二照度區域的照度值，其中該圖框資料所包括的該些最高有效位元資料相較於該圖框資料所包括的該些最低有效位元資料具有較少的位元數量。
  10. 如申請專利範圍第9項所述的取像方法，其中藉由在該影像感測器中陣列排列的該些像素單元在該取像操作中輸出該些第一取像信號以及該些第二取像信號的步驟包括：藉由該些像素單元在該取像操作中依據一第一曝光時間來輸出該些第一取像信號；以及藉由該些像素單元在該取像操作中依據一第二曝光時間來輸出該些第二取像信號，其中該第一曝光時間不同於該第二曝光時間。
  11. 如申請專利範圍第10項所述的取像方法，其中該些像素單元各別包括一感光二極體、一第一開關以及一重置開關，並且藉由在該影像感測器中陣列排列的該些像素單元在該取像操作中輸出該些第一取像信號以及該些第二取像信號的步驟包括操作該些像素單元以執行：藉由該重置開關在該取像操作中接收一第一重置信號以及第二重置信號號；以及藉由該第一開關在該取像操作中接收一第一讀出信號以及一第二讀出信號，其中該第一重置信號與該第一讀出信號之間的一第一時間差為該第一曝光時間，並且該第二重置信號與該第二讀出信號之間 的一第二時間差為該第二曝光時間。
  12. 如申請專利範圍第10項所述的取像方法，其中該第一曝光時間不等於該第二曝光時間。
  13. 如申請專利範圍第9項所述的取像方法，其中記憶體在該取像操作中僅儲存該圖框資料。
  14. 如申請專利範圍第9項所述的取像方法，其中該些最高有效位元資料為4位元資料，並且該些最低有效位元資料為6位元資料。
  15. 如申請專利範圍第9項所述的取像方法，其中該第一非線性斜率信號以及該第二非線性斜率信號各別的一電壓與時間關係曲線為斜率變化漸增的曲線或分段直線。
  16. 如申請專利範圍第9項所述的取像方法，其中該影像感測器為一指紋感測器。
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