TW201915818A - 光學識別模組 - Google Patents
光學識別模組 Download PDFInfo
- Publication number
- TW201915818A TW201915818A TW107123381A TW107123381A TW201915818A TW 201915818 A TW201915818 A TW 201915818A TW 107123381 A TW107123381 A TW 107123381A TW 107123381 A TW107123381 A TW 107123381A TW 201915818 A TW201915818 A TW 201915818A
- Authority
- TW
- Taiwan
- Prior art keywords
- shielding layer
- light shielding
- light
- opening
- openings
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000005259 measurement Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/20—Handling requests for interconnection or transfer for access to input/output bus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/147—Details of sensors, e.g. sensor lenses
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
- G02B1/041—Lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
- G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/382—Information transfer, e.g. on bus using universal interface adapter
- G06F13/385—Information transfer, e.g. on bus using universal interface adapter for adaptation of a particular data processing system to different peripheral devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4282—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus
- G06F13/4291—Bus transfer protocol, e.g. handshake; Synchronisation on a serial bus, e.g. I2C bus, SPI bus using a clocked protocol
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/00127—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture
- H04N1/00204—Connection or combination of a still picture apparatus with another apparatus, e.g. for storage, processing or transmission of still picture signals or of information associated with a still picture with a digital computer or a digital computer system, e.g. an internet server
- H04N1/00209—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax
- H04N1/00214—Transmitting or receiving image data, e.g. facsimile data, via a computer, e.g. using e-mail, a computer network, the internet, I-fax details of transmission
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/21—Intermediate information storage
- H04N1/2104—Intermediate information storage for one or a few pictures
- H04N1/2112—Intermediate information storage for one or a few pictures using still video cameras
- H04N1/2137—Intermediate information storage for one or a few pictures using still video cameras with temporary storage before final recording, e.g. in a frame buffer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/66—Remote control of cameras or camera parts, e.g. by remote control devices
- H04N23/661—Transmitting camera control signals through networks, e.g. control via the Internet
- H04N23/662—Transmitting camera control signals through networks, e.g. control via the Internet by using master/slave camera arrangements for affecting the control of camera image capture, e.g. placing the camera in a desirable condition to capture a desired image
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/72—Combination of two or more compensation controls
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/743—Bracketing, i.e. taking a series of images with varying exposure conditions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
- H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2213/00—Indexing scheme relating to interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F2213/0002—Serial port, e.g. RS232C
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L67/00—Network arrangements or protocols for supporting network services or applications
- H04L67/01—Protocols
- H04L67/10—Protocols in which an application is distributed across nodes in the network
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2201/00—Indexing scheme relating to scanning, transmission or reproduction of documents or the like, and to details thereof
- H04N2201/0077—Types of the still picture apparatus
- H04N2201/0084—Digital still camera
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
一種光學識別模組,其包括感測器以及準直器。感測器具有多個感測區。準直器設置在所述多個感測區上,且準直器包括透光基板以及第一光屏蔽層。第一光屏蔽層設置在透光基板的第一表面上。第一光屏蔽層包括多個第一開口。第一光屏蔽層的厚度與各第一開口的寬度的比值大於1。
Description
本發明是有關於一種光學模組,且特別是有關於一種可識別生物特徵的光學識別模組。
隨著物聯網技術的蓬勃發展,生物辨識技術的應用及需求因此迅速擴張。目前市面上常見的生物辨識技術主要是利用光學、電容或超音波等方式識別指紋、掌紋、靜脈分佈、虹膜、視網膜或臉部特徵等生物特徵,藉此達到身分辨識或認證的目的。相較於以電容或超音波方式識別生物特徵的識別模組,以光學方式識別生物特徵的光學識別模組藉由感測器接收被待測物反射的光束,以進行生物特徵的識別,因此具有耐用度高且成本低廉的優勢。然而,被待測物反射的光束容易散亂地傳遞至感測器,而造成取像品質不佳,影響識別結果。
本發明提供一種光學識別模組,其具有良好的辨識能力。
本發明的一種光學識別模組包括感測器以及準直器。感測器具有多個感測區。準直器設置在所述多個感測區上,且準直器包括透光基板以及第一光屏蔽層。第一光屏蔽層設置在透光基板的第一表面上。第一光屏蔽層包括多個第一開口,且第一光屏蔽層的厚度與各第一開口的寬度的比值大於1。
在本發明的一實施例中,第一光屏蔽層位於透光基板與感測器之間,且各第一開口的尺寸小於或等於各感測區的尺寸。
在本發明的一實施例中,準直器還包括第二光屏蔽層以及多個微透鏡。第二光屏蔽層設置在透光基板的第二表面上。第二表面與第一表面相對。第二光屏蔽層包括多個第二開口。各第二開口的尺寸大於或等於各第一開口的尺寸。
在本發明的一實施例中,多個微透鏡設置在第二表面上且分別位於所述多個第二開口中。
在本發明的一實施例中,所述多個微透鏡與透光基板的折射率差值的絕對值小於0.1。
在本發明的一實施例中,透光基板位於第一光屏蔽層與感測器之間。
在本發明的一實施例中,準直器還包括第二光屏蔽層以及多個微透鏡。第二光屏蔽層設置在透光基板的第二表面上。第二表面與第一表面相對。第二光屏蔽層包括多個第二開口。各第二開口的尺寸小於或等於各感測區的尺寸,且各第一開口的尺寸大於或等於各第二開口的尺寸。
在本發明的一實施例中,多個微透鏡設置在第一表面上且分別位於所述多個第一開口中。
本發明的一種光學識別模組包括感測器以及準直器。感測器具有多個感測區。準直器設置在所述多個感測區上,且準直器包括透光基板、第一光屏蔽層以及第二光屏蔽層。透光基板具有第一表面以及第二表面,且第二表面位於第一表面與感測器之間。第一光屏蔽層設置在第一表面上,且第一光屏蔽層包括多個第一開口。第二光屏蔽層設置在第二表面上,且第二光屏蔽層包括多個第二開口。各第二開口的尺寸小於或等於各感測區的尺寸,且各第一開口的尺寸大於或等於各第二開口的尺寸。
在本發明的一實施例中,準直器還包括多個微透鏡。所述多個微透鏡設置在第一表面上且分別位於所述多個第一開口中。
基於上述,在本發明的光學識別模組中,利用準直器將傳遞至感測器的光束準直化,以有效改善光學干擾(crosstalk)、達到光學降噪並提升影像解析度。因此,本發明的光學識別模組可具有良好的辨識能力。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
在圖式中,各圖式繪示的是特定示範實施例中所使用的方法、結構及/或材料的通常性特徵。然而,所述圖式並不侷限於下列實施例的結構或特徵,且這些圖式不應被解釋為界定或限制由這些示範實施例所涵蓋的範圍或性質。舉例來說,為了清楚起見,各膜層、區域及/或結構的相對厚度及位置可能縮小或放大。
在各圖式中使用相似或相同的元件符號傾向於標示相似或相同元件或特徵的存在。圖式中的相似元件符號標示相似的元件並且將省略其贅述。
下列實施例所列舉的光學識別模組適於擷取待測物的生物特徵。待測物可為手指或手掌。對應地,生物特徵可為指紋、靜脈或掌紋,但不以此為限。
圖1至圖7分別是依照本發明的第一至第七實施例的光學識別模組的剖面示意圖。請參照圖1,第一實施例的光學識別模組100包括感測器110以及準直器120。
感測器110適於接收被待測物(未繪示)反射的光束(即帶有生物特徵資訊的光束,未繪示)。舉例來說,感測器110可包括電荷耦合元件(Charge Coupled Device, CCD)、互補式金屬氧化物半導體元件(Complementary Metal-Oxide Semiconductor, CMOS)或其他適當種類的光學感測元件。
感測器110具有多個感測區R。所述多個感測區R為感測器110中的多個收光區域。當感測器110採用多個電荷耦合元件來收光時,所述多個感測區R分別為多個電荷耦合元件的所在區域。另一方面,當感測器110採用互補式金屬氧化物半導體元件來收光時,所述多個感測區R是互補式金屬氧化物半導體元件中的多個像素區。
準直器120設置在所述多個感測區R上。具體地,準直器120設置在待測物與感測器110之間,以將被待測物反射且朝感測器110傳遞的光束準直化,藉此改善光學干擾、達到光學降噪並提升影像解析度。
進一步而言,準直器120包括透光基板122以及第一光屏蔽層124。透光基板122可以是任何能夠讓光束通過的載板。舉例來說,透光基板122可包括玻璃基板或塑膠基板,但不以此為限。
透光基板122具有第一表面S1以及與第一表面S1相對的第二表面S2。第一光屏蔽層124設置在透光基板122的第一表面S1上。在本實施例中,第一表面S1位於第二表面S2與感測器110之間,亦即,第一表面S1為透光基板122面向感測器110的表面,而第二表面S2為透光基板122背對感測器110的表面。因此,第一光屏蔽層124位於透光基板122與感測器110之間。在另一實施例中,可將準直器120倒置,使得設置有第一光屏蔽層124的第一表面S1背對感測器110,而第二表面S2面向感測器110,如此,透光基板122位於第一光屏蔽層124與感測器110之間。
第一光屏蔽層124適於屏蔽雜散光,且第一光屏蔽層124可由任何能夠屏蔽光的材質形成。舉例來說,所述屏蔽光的材質可包括吸光材質,但不以此為限。舉例來說,第一光屏蔽層124的材質可包括黑色油墨或黑色光阻。此外,第一光屏蔽層124可由印刷的方式形成在第一表面S1上。然而,第一光屏蔽層124的材質、顏色及其形成於第一表面S1上的方式可依需求改變,而不限於上述。
由於準直器120設置在待測物與感測器110之間,因此為了讓感測器110接收到被待測物反射的光束(即帶有生物特徵資訊的光束),準直器120的第一光屏蔽層124包括對應感測器110的所述多個感測區R設置的多個第一開口O1。如此,被待測物反射的光束可經由所述多個第一開口O1傳遞至感測器110。
各第一開口O1的尺寸(如各第一開口O1的寬度WO1)小於或等於各感測區R的尺寸(各感測區R的寬度WR),以使各第一開口O1中的光束傳遞至對應的感測區R中。上述的寬度(如第一開口O1的寬度WO1及感測區R的寬度WR)可以是開口/區域的直徑(當開口/區域的形狀為圓形)或是開口/區域的對角線長(當開口/區域的形狀為方形)。
在本實施例中,所述多個第一開口O1與所述多個感測區R的設置關係是一對一,即每個感測區R上設置有一個第一開口O1。然而,在另一實施例中,所述多個第一開口O1與所述多個感測區R的設置關係可以是多對一,即每個感測區R上設置有複數個第一開口O1。
各第一開口O1中可依需求而填充或不填充透光材質。在本實施例中,各第一開口O1中沒有填充任何材質。也就是說,各第一開口O1中的光傳遞介質為空氣。然而,在另一實施例中,各第一開口O1中可填充有透光材質。也就是說,各第一開口O1中的光傳遞介質為透光材質。透光材質的折射率較佳等於或接近透光基板122的折射率,以降低因介面反射或光束傳遞路徑改變而造成的光損失。
依據不同的設計需求,各第一開口O1的延伸方向DE1與透光基板122的厚度方向DT之間的夾角落在0度至45度的範圍內。在本實施例中,延伸方向DE1與厚度方向DT之間的夾角(未繪示)為0度。換句話說,各第一開口O1朝透光基板122的厚度方向DT延伸,但本發明不以此為限。
朝感測區R傳遞的光束的準直化效果會與第一光屏蔽層124的厚度T124以及各第一開口O1的寬度WO1相關。第一光屏蔽層124越厚及/或各第一開口O1越窄,光束的準直化效果越顯著。相反地,第一光屏蔽層124越薄及/或各第一開口O1越寬,光束的準直化效果越不顯著。為了有效將光束準直化(例如藉由第一光屏蔽層124屏蔽/吸收朝感測區R傳遞的光束中的大角度光束),第一光屏蔽層124的厚度T124與各第一開口O1的寬度WO1的比值(T124/WO1)大於1。藉由上述設計,可有效改善光學干擾、達到光學降噪並提升影像解析度,使得光學識別模組100具有良好的辨識能力。
依據不同的需求,光學識別模組100可進一步包括其他元件。舉例來說,光學識別模組100可進一步包括光源,但不以此為限。
請參照圖2,第二實施例的光學識別模組200與圖1中光學識別模組100的主要差異如下所述。在光學識別模組200中,各第一開口O1的延伸方向DE1與透光基板122的厚度方向DT之間的夾角θ大於0度且小於或等於45度。
請參照圖3,第三實施例的光學識別模組100A與圖1中光學識別模組100的主要差異如下所述。在光學識別模組100A中,所述多個第一開口O1與所述多個感測區R的設置關係是多對一,即每個感測區R上設置有複數個第一開口O1。
請參照圖4,第四實施例的光學識別模組200A與圖2中光學識別模組200的主要差異如下所述。在光學識別模組200A中,所述多個第一開口O1與所述多個感測區R的設置關係是多對一,即每個感測區R上設置有複數個第一開口O1。
請參照圖5,第五實施例的光學識別模組300與圖1中光學識別模組100的主要差異如下所述。在光學識別模組300中,準直器120A除了透光基板122及第一光屏蔽層124之外還包括第二光屏蔽層126以及多個微透鏡128。
第二光屏蔽層126設置在透光基板122的第二表面S2上。換句話說,第二光屏蔽層126與第一光屏蔽層124分別位於透光基板122的相對兩側。
第二光屏蔽層126也適於屏蔽雜散光,且第二光屏蔽層126可由任何能夠屏蔽光的材質形成。舉例來說,所述屏蔽光的材質可包括吸光材質,但不以此為限。舉例來說,第二光屏蔽層126的材質可包括黑色油墨或黑色光阻。此外,第二光屏蔽層126可由印刷的方式形成在第二表面S2上。然而,第二光屏蔽層126的材質、顏色及其形成於第二表面S2上的方式可依需求改變,而不限於上述。
第二光屏蔽層126包括對應第一光屏蔽層124的多個第一開口O1設置的多個第二開口O2,且各第二開口O2的尺寸(如各第二開口O2的寬度WO2)可大於或等於各第一開口O1的尺寸(如各第一開口O1的寬度WO1)。
多個微透鏡128設置在第二表面S2上且分別位於所述多個第二開口O2中。進一步而言,多個微透鏡128適於匯聚光束,而有助於感測器110接收到更多被待測物反射的光束。在本實施例中,多個微透鏡128陣列排列在第二表面S2上,且多個微透鏡128與多個感測區R的設置關係是一對一。然而,在另一實施例中,多個微透鏡128與多個感測區R的設置關係也可以是多對一。
多個微透鏡128的折射率較佳等於或接近透光基板122的折射率,以降低因介面反射或光束傳遞路徑改變而造成的光損失。舉例來說,多個微透鏡128與透光基板122的折射率差值的絕對值較佳小於0.1。此外,各微透鏡128的曲率半徑小於透光基板122的厚度T122與各感測區R的寬度WR的比值(T122/WR),以達到較佳的匯聚效果。
在本實施例中,各第一開口O1中可依需求而填充或不填充透光材質。此外,準直器120A可省略多個微透鏡128的設置,在此架構下,各第二開口O2中也可依需求而填充或不填充透光材質。另外,依據不同的需求,光學識別模組300可進一步包括其他元件。相關說明請參照前述,於此不再贅述。
請參照圖6,第六實施例的光學識別模組400與圖5中光學識別模組300的主要差異如下所述。在光學識別模組400中,設置有第一光屏蔽層124的第一表面S1背對感測器110,且設置有第二光屏蔽層126的第二表面S2面向感測器110,使得透光基板122位於第一光屏蔽層124與感測器110之間。
此外,各第二開口O2的尺寸(如各第二開口O2的寬度WO2)小於或等於各感測區R的尺寸(各感測區R的寬度WR),且各第一開口的尺寸(如各第一開口O1的寬度WO1)大於或等於各第二開口O2的尺寸(如各第二開口O2的寬度WO2)。
多個微透鏡128設置在第一表面S1上且分別位於多個第一開口O1中。在本實施例中,多個微透鏡陣列128排列在第一表面S1上,且多個微透鏡128與多個感測區R的設置關係是一對一。然而,在另一實施例中,多個微透鏡128與多個感測區R的設置關係可以是多對一。微透鏡128的相關設計請參照前述,於此不再重述。
在本實施例中,各第二開口O2中可依需求而填充或不填充透光材質。此外,準直器120B可省略多個微透鏡128的設置,在此架構下,各第一開口O1中也可依需求而填充或不填充透光材質。另外,依據不同的需求,光學識別模組400可進一步包括其他元件。相關說明請參照前述,於此不再贅述。
請參照圖7,第七實施例的光學識別模組500與圖6中光學識別模組400的主要差異如下所述。在光學識別模組500中,準直器120C的第一光屏蔽層124C比圖6中準直器120B的第一光屏蔽層124更薄,亦即厚度T124C小於厚度T124,且第一光屏蔽層124C的厚度T124C與各第一開口O1的寬度WO1的比值(T124C/WO1)可以不用大於1。因此,光學識別模組500可具有較薄的厚度。
在本實施例中,各第二開口O2中可依需求而填充或不填充透光材質。此外,準直器120C可省略多個微透鏡128的設置,在此架構下,各第一開口O1中也可依需求而填充或不填充透光材質。另外,依據不同的需求,光學識別模組500可進一步包括其他元件。相關說明請參照前述,於此不再贅述。
綜上所述,在本發明的光學識別模組中,利用準直器將傳遞至感測器的光束準直化,以有效改善光學干擾、達到光學降噪並提升影像解析度。因此,本發明的光學識別模組可具有良好的辨識能力。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100、100A、200、200A、300、400、500‧‧‧光學識別模組
110‧‧‧感測器
120、120A、120B、120C‧‧‧準直器
122‧‧‧透光基板
124、124C‧‧‧第一光屏蔽層
126‧‧‧第二光屏蔽層
128‧‧‧微透鏡
DE1‧‧‧延伸方向
DT‧‧‧厚度方向
O1‧‧‧第一開口
O2‧‧‧第二開口
R‧‧‧感測區
S1‧‧‧第一表面
S2‧‧‧第二表面
T122、T124、T124C‧‧‧厚度
WO1、WO2、WR‧‧‧寬度
θ‧‧‧夾角
圖1至圖7分別是依照本發明的第一至第七實施例的光學識別模組的剖面示意圖。
Claims (10)
- 一種光學識別模組,包括: 一感測器,具有多個感測區;以及 一準直器,設置在所述多個感測區上,且所述準直器包括: 一透光基板;以及 一第一光屏蔽層,設置在所述透光基板的一第一表面上,其中所述第一光屏蔽層包括多個第一開口,且所述第一光屏蔽層的厚度與各第一開口的寬度的比值大於1。
- 如申請專利範圍第1項所述的光學識別模組,其中所述第一光屏蔽層位於所述透光基板與所述感測器之間,且各第一開口的尺寸小於或等於各感測區的尺寸。
- 如申請專利範圍第2項所述的光學識別模組,其中所述準直器還包括: 一第二光屏蔽層,設置在所述透光基板的一第二表面上,且所述第二表面與所述第一表面相對,所述第二光屏蔽層包括多個第二開口,其中各第二開口的尺寸大於或等於各第一開口的尺寸。
- 如申請專利範圍第3項所述的光學識別模組,其中所述準直器還包括: 多個微透鏡,設置在該第二表面上且分別位於所述多個第二開口中。
- 如申請專利範圍第4項所述的光學識別模組,其中所述多個微透鏡與所述透光基板的折射率差值的絕對值小於0.1。
- 如申請專利範圍第1項所述的光學識別模組,其中所述透光基板位於所述第一光屏蔽層與所述感測器之間。
- 如申請專利範圍第6項所述的光學識別模組,其中所述準直器還包括: 一第二光屏蔽層,設置在所述透光基板的一第二表面上,且所述第二表面與所述第一表面相對,所述第二光屏蔽層包括多個第二開口,其中各第二開口的尺寸小於或等於各感測區的尺寸,且各第一開口的尺寸大於或等於各第二開口的尺寸。
- 如申請專利範圍第7項所述的光學識別模組,其中所述準直器還包括: 多個微透鏡,設置在所述第一表面上且分別位於所述多個第一開口中。
- 一種光學識別模組,包括: 一感測器,具有多個感測區;以及 一準直器,設置在所述多個感測區上,且所述準直器包括: 一透光基板,具有一第一表面以及一第二表面,且所述第二表面位於所述第一表面與所述感測器之間; 一第一光屏蔽層,設置在所述第一表面上,且所述第一光屏蔽層包括多個第一開口;以及 一第二光屏蔽層,設置在所述第二表面上,且所述第二光屏蔽層包括多個第二開口,其中各第二開口的尺寸小於或等於各感測區的尺寸,且各第一開口的尺寸大於或等於各第二開口的尺寸。
- 如申請專利範圍第9項所述的光學識別模組,其中所述準直器還包括: 多個微透鏡,設置在所述第一表面上且分別位於所述多個第一開口中。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/362,706 US20200012837A1 (en) | 2017-10-05 | 2019-03-25 | Optical identification module |
US16/742,920 US11262592B2 (en) | 2018-07-05 | 2020-01-15 | Optical identification module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762568772P | 2017-10-05 | 2017-10-05 | |
US62/568,772 | 2017-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201915818A true TW201915818A (zh) | 2019-04-16 |
Family
ID=66066222
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107123381A TW201915818A (zh) | 2017-10-05 | 2018-07-05 | 光學識別模組 |
TW107124245A TW201915542A (zh) | 2017-10-05 | 2018-07-13 | 光學裝置 |
TW107125354A TWI728254B (zh) | 2017-10-05 | 2018-07-23 | 影像資料傳輸系統及影像資料傳輸方法 |
TW107126012A TWI679539B (zh) | 2017-10-05 | 2018-07-27 | 主從式系統、指令執行方法與資料存取方法 |
TW107126454A TWI719332B (zh) | 2017-10-05 | 2018-07-31 | 曝光方法、電子裝置與主從式系統 |
TW107135207A TWI667653B (zh) | 2017-10-05 | 2018-10-05 | 記憶胞 |
TW107135211A TWI703865B (zh) | 2017-10-05 | 2018-10-05 | 電子裝置以及取像方法 |
TW107135206A TWI667919B (zh) | 2017-10-05 | 2018-10-05 | 電子裝置以及自動曝光收斂方法 |
Family Applications After (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107124245A TW201915542A (zh) | 2017-10-05 | 2018-07-13 | 光學裝置 |
TW107125354A TWI728254B (zh) | 2017-10-05 | 2018-07-23 | 影像資料傳輸系統及影像資料傳輸方法 |
TW107126012A TWI679539B (zh) | 2017-10-05 | 2018-07-27 | 主從式系統、指令執行方法與資料存取方法 |
TW107126454A TWI719332B (zh) | 2017-10-05 | 2018-07-31 | 曝光方法、電子裝置與主從式系統 |
TW107135207A TWI667653B (zh) | 2017-10-05 | 2018-10-05 | 記憶胞 |
TW107135211A TWI703865B (zh) | 2017-10-05 | 2018-10-05 | 電子裝置以及取像方法 |
TW107135206A TWI667919B (zh) | 2017-10-05 | 2018-10-05 | 電子裝置以及自動曝光收斂方法 |
Country Status (3)
Country | Link |
---|---|
US (9) | US10609296B1 (zh) |
CN (9) | CN109638632A (zh) |
TW (8) | TW201915818A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI716142B (zh) * | 2019-10-08 | 2021-01-11 | 大陸商廣州印芯半導體技術有限公司 | 光學識別模組 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110503044A (zh) * | 2018-12-03 | 2019-11-26 | 神盾股份有限公司 | 指纹传感器及其指纹感测方法 |
EP3796208B1 (en) * | 2018-12-14 | 2023-03-15 | Shenzhen Goodix Technology Co., Ltd. | Fingerprint recognition apparatus and electronic device |
US11682230B2 (en) * | 2019-03-07 | 2023-06-20 | Novatek Microelectronics Corp. | Fingerprint signal processing circuit and method for signal compensation in analog front-end |
EP3944628A4 (en) * | 2019-03-18 | 2023-02-22 | Hanwha Techwin Co., Ltd. | CAMERA FOR ANALYZING IMAGES BASED ON ARTIFICIAL INTELLIGENCE AND OPERATING METHODS THEREOF |
WO2020227986A1 (zh) * | 2019-05-15 | 2020-11-19 | 深圳市汇顶科技股份有限公司 | 图像采集的装置、方法和电子设备 |
CN110164307B (zh) * | 2019-05-23 | 2021-01-26 | 厦门天马微电子有限公司 | 一种内置有指纹识别感应器的显示装置 |
KR20200137079A (ko) | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | 지문 센서 및 이를 포함하는 표시 장치 |
US11314961B2 (en) * | 2019-06-12 | 2022-04-26 | Beijing Boe Display Technology Co., Ltd. | Texture image acquisition method, texture image acquisition circuit and display panel |
TWI748460B (zh) * | 2019-06-21 | 2021-12-01 | 大陸商廣州印芯半導體技術有限公司 | 飛時測距裝置及飛時測距方法 |
CN110445012A (zh) * | 2019-08-01 | 2019-11-12 | 浙江舜宇光学有限公司 | 发光模块、其制备方法以及具有其的深度探测装置 |
KR102494086B1 (ko) * | 2019-08-23 | 2023-01-30 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | 지문 검출 장치, 방법 및 전자 장치 |
WO2021051820A1 (zh) * | 2019-09-22 | 2021-03-25 | 神盾股份有限公司 | 指纹感测模块及电子装置 |
US11301708B2 (en) * | 2019-10-01 | 2022-04-12 | Novatek Microelectronics Corp. | Image sensing circuit and method |
CN112766017A (zh) * | 2019-10-21 | 2021-05-07 | 广州印芯半导体技术有限公司 | 光学识别模块 |
CN110944125B (zh) * | 2019-11-06 | 2022-02-22 | 西安理工大学 | 一种提高cmos图像传感器对比度的非线性列级adc及方法 |
CN110970454B (zh) * | 2019-11-28 | 2022-03-15 | 苏州晶方半导体科技股份有限公司 | 生物特征识别芯片的封装结构 |
CN110867165B (zh) * | 2019-11-29 | 2021-10-15 | 厦门天马微电子有限公司 | 一种显示面板及显示装置 |
WO2021107217A1 (ko) * | 2019-11-29 | 2021-06-03 | 엘지전자 주식회사 | 방사선 디텍터 및 이를 이용한 방사선 촬영 방법 |
US11062110B2 (en) * | 2019-12-13 | 2021-07-13 | Novatek Microelectronics Corp. | Fingerprint detection device, method and non-transitory computer-readable medium for operating the same |
TWI727550B (zh) * | 2019-12-13 | 2021-05-11 | 大陸商廣州印芯半導體技術有限公司 | 光學識別模組 |
CN111064073A (zh) * | 2019-12-26 | 2020-04-24 | 常州纵慧芯光半导体科技有限公司 | 一种激光器及其制备方法及其应用 |
CN113296277A (zh) * | 2020-02-24 | 2021-08-24 | 宁波激智科技股份有限公司 | 一种准直膜、及一种减干涉准直膜及其制备方法 |
CN113796853A (zh) * | 2020-06-16 | 2021-12-17 | 广州印芯半导体技术有限公司 | 光学影像比较系统及其比较方法 |
US11327907B2 (en) | 2020-07-08 | 2022-05-10 | Macronix International Co., Ltd. | Methods and apparatus for improving SPI continuous read |
US11675731B2 (en) | 2020-08-20 | 2023-06-13 | Global Unichip Corporation | Data protection system and method thereof for 3D semiconductor device |
US11031923B1 (en) * | 2020-08-20 | 2021-06-08 | Global Unichip Corporation | Interface device and interface method for 3D semiconductor device |
US11699683B2 (en) | 2020-08-20 | 2023-07-11 | Global Unichip Corporation | Semiconductor device in 3D stack with communication interface and managing method thereof |
US11687472B2 (en) * | 2020-08-20 | 2023-06-27 | Global Unichip Corporation | Interface for semiconductor device and interfacing method thereof |
US11144485B1 (en) | 2020-08-20 | 2021-10-12 | Global Unichip Corporation | Interface for semiconductor device with symmetric bond pattern and method for arranging interface thereof |
CN112104802B (zh) * | 2020-08-21 | 2021-07-20 | 深圳市睿联技术股份有限公司 | 一种摄像电路及摄像装置 |
US20220067323A1 (en) * | 2020-08-27 | 2022-03-03 | Au Optronics Corporation | Sensing device substrate and display apparatus having the same |
TWI744113B (zh) * | 2020-09-30 | 2021-10-21 | 創意電子股份有限公司 | 用於三維半導體器件的介面器件及介面方法 |
CN112511772A (zh) * | 2020-10-28 | 2021-03-16 | 深圳奥辰光电科技有限公司 | 一种图像传感器、增强图像传感器线性的方法及深度相机 |
CN114826811A (zh) * | 2021-01-28 | 2022-07-29 | 南宁富桂精密工业有限公司 | 数据传输方法及其系统 |
US11398102B1 (en) * | 2021-03-29 | 2022-07-26 | Innolux Corporation | Method for recognizing fingerprint |
US11798309B2 (en) * | 2021-04-15 | 2023-10-24 | Novatek Microelectronics Corp. | Fingerprint identification method for panel, electronic device, and control circuit |
CN115529828A (zh) * | 2021-04-26 | 2022-12-27 | 泉州三安半导体科技有限公司 | 一种发光装置 |
CN114359985A (zh) * | 2021-12-31 | 2022-04-15 | 深圳市汇顶科技股份有限公司 | 指纹识别的方法、装置和电子设备 |
TWI818536B (zh) * | 2022-05-06 | 2023-10-11 | 圓展科技股份有限公司 | 無線攝影機的通訊方法及可插拔裝置 |
Family Cites Families (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1249616B (it) * | 1991-05-30 | 1995-03-09 | Sgs Thomson Microelectronics | Circuito di precarica di bit line per la lettura di una cella di memoria eprom. |
US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
FR2775091B1 (fr) * | 1998-02-16 | 2000-04-28 | Matra Communication | Procede de transfert de donnees en serie, et interface de bus serie synchrone mettant en oeuvre un tel procede |
JP3326560B2 (ja) * | 2000-03-21 | 2002-09-24 | 日本テキサス・インスツルメンツ株式会社 | 半導体メモリ装置 |
ATE506807T1 (de) * | 2001-06-18 | 2011-05-15 | Casio Computer Co Ltd | Photosensorsystem und ansteuerungsverfahren dafür |
US7233350B2 (en) * | 2002-01-05 | 2007-06-19 | Candela Microsystems, Inc. | Image sensor with interleaved image output |
US7265784B1 (en) * | 2002-08-19 | 2007-09-04 | Pixim, Inc. | Image processor with noise reduction circuit |
TW562991B (en) * | 2002-11-20 | 2003-11-21 | Novatek Microelectronics Corp | Fast convergence method for the appropriate exposure value |
JP4219663B2 (ja) * | 2002-11-29 | 2009-02-04 | 株式会社ルネサステクノロジ | 半導体記憶装置及び半導体集積回路 |
CN100337156C (zh) * | 2002-12-05 | 2007-09-12 | 联咏科技股份有限公司 | 适当曝光值的快速收敛方法 |
CN2609064Y (zh) * | 2003-02-28 | 2004-03-31 | 光宝科技股份有限公司 | 名片扫描仪及其传输模块 |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
JP4136793B2 (ja) * | 2003-05-29 | 2008-08-20 | キヤノン株式会社 | 撮像装置および撮像装置の制御方法 |
US7483058B1 (en) * | 2003-08-04 | 2009-01-27 | Pixim, Inc. | Video imaging system including a digital image sensor and a digital signal processor |
US7446812B2 (en) * | 2004-01-13 | 2008-11-04 | Micron Technology, Inc. | Wide dynamic range operations for imaging |
US7292232B2 (en) * | 2004-04-30 | 2007-11-06 | Microsoft Corporation | Data input devices and methods for detecting movement of a tracking surface by a laser speckle pattern |
US7084667B2 (en) * | 2004-07-13 | 2006-08-01 | International Business Machines Corporation | Low leakage monotonic CMOS logic |
US7342256B2 (en) * | 2004-07-16 | 2008-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device mounted with read function and electric appliance |
JP4498270B2 (ja) * | 2005-11-30 | 2010-07-07 | 株式会社バンダイナムコゲームス | プログラム、情報記憶媒体、写真印刷装置及び写真印刷方法 |
KR100665853B1 (ko) * | 2005-12-26 | 2007-01-09 | 삼성전자주식회사 | 고집적 스태이틱 랜덤 억세스 메모리에 채용하기 적합한적층 메모리 셀 |
JP5168837B2 (ja) * | 2006-07-27 | 2013-03-27 | ソニー株式会社 | 画像処理装置、画像処理方法およびプログラム |
CN200986927Y (zh) * | 2006-09-15 | 2007-12-05 | 林三宝 | 具有微光学结构的发光二极管 |
JP4843461B2 (ja) * | 2006-11-13 | 2011-12-21 | 株式会社東芝 | 固体撮像装置 |
CN100573491C (zh) * | 2006-12-15 | 2009-12-23 | 凌阳科技股份有限公司 | 串行传输控制器与串行传输解码器及其串行传输方法 |
CN100480830C (zh) * | 2007-01-30 | 2009-04-22 | 北京中星微电子有限公司 | 一种逆光检测方法、逆光补偿终止检测方法及相应装置 |
CN100498749C (zh) * | 2007-04-12 | 2009-06-10 | 威盛电子股份有限公司 | 串行外围接口数据传输方法及串行外围接口数据传输系统 |
JP4470957B2 (ja) * | 2007-04-26 | 2010-06-02 | ブラザー工業株式会社 | 画像処理システム及び画像読取装置 |
DE102007024737A1 (de) * | 2007-05-25 | 2008-11-27 | Robert Bosch Gmbh | Datenübertragungsverfahren zwischen Master- und Slave-Einrichtungen |
US7920409B1 (en) * | 2007-06-05 | 2011-04-05 | Arizona Board Of Regents For And On Behalf Of Arizona State University | SRAM cell with intrinsically high stability and low leakage |
TWI334547B (en) * | 2007-06-07 | 2010-12-11 | Via Tech Inc | System and method for serial peripheral interface data transmission |
US20090006911A1 (en) * | 2007-06-28 | 2009-01-01 | Mediatek Inc. | Data replacement processing method |
US8429329B2 (en) * | 2007-10-17 | 2013-04-23 | Micron Technology, Inc. | Serial interface NAND |
US8103936B2 (en) * | 2007-10-17 | 2012-01-24 | Micron Technology, Inc. | System and method for data read of a synchronous serial interface NAND |
US9584710B2 (en) * | 2008-02-28 | 2017-02-28 | Avigilon Analytics Corporation | Intelligent high resolution video system |
US20100118153A1 (en) * | 2008-11-12 | 2010-05-13 | Xiaoguang Yu | Apparatus and methods for controlling image sensors |
US7849229B2 (en) * | 2008-11-25 | 2010-12-07 | Spansion Llc | SPI addressing beyond 24-bits |
US8156274B2 (en) * | 2009-02-02 | 2012-04-10 | Standard Microsystems Corporation | Direct slave-to-slave data transfer on a master-slave bus |
JP2010263305A (ja) * | 2009-04-30 | 2010-11-18 | Fujifilm Corp | 撮像装置及びその駆動方法 |
CN102023945B (zh) * | 2009-09-22 | 2012-03-28 | 鸿富锦精密工业(深圳)有限公司 | 基于串行外围设备接口总线的设备及其数据传输方法 |
CN101950280B (zh) * | 2009-09-30 | 2012-11-14 | 威盛电子股份有限公司 | 产生多个串行总线芯片选择的方法 |
US20110078350A1 (en) * | 2009-09-30 | 2011-03-31 | Via Technologies, Inc. | Method for generating multiple serial bus chip selects using single chip select signal and modulation of clock signal frequency |
US8176209B2 (en) * | 2009-11-05 | 2012-05-08 | Electronics And Telecommunications Research Institute | Data communication system |
CN102097050B (zh) * | 2009-12-11 | 2016-03-09 | 康佳集团股份有限公司 | 一种实现显示信号无缝切换的装置和方法 |
CN102104641A (zh) * | 2009-12-18 | 2011-06-22 | 深圳富泰宏精密工业有限公司 | 手机及其实现360度拍照的方法 |
KR20110076729A (ko) * | 2009-12-18 | 2011-07-06 | 삼성전자주식회사 | 전자 셔터를 이용한 다단계 노출 이미지 획득 방법 및 이를 이용한 촬영 장치 |
US8327052B2 (en) * | 2009-12-23 | 2012-12-04 | Spansion Llc | Variable read latency on a serial memory bus |
TWI406135B (zh) * | 2010-03-09 | 2013-08-21 | Nuvoton Technology Corp | 資料傳輸系統與可編程序列周邊介面控制器 |
CN102200864B (zh) * | 2010-03-26 | 2013-08-14 | 原相科技股份有限公司 | 光学式触控装置 |
US8310584B2 (en) * | 2010-04-29 | 2012-11-13 | Victory Gain Group Corporation | Image sensing device having thin thickness |
CN101841624A (zh) * | 2010-05-17 | 2010-09-22 | 北京思比科微电子技术股份有限公司 | 图像传感器数据传输方法 |
US8325890B2 (en) * | 2010-06-06 | 2012-12-04 | Apple Inc. | Auto exposure techniques for variable lighting conditions |
JP2012008385A (ja) * | 2010-06-25 | 2012-01-12 | Ricoh Co Ltd | 画像形成装置および画像形成方法 |
US8422272B2 (en) * | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
US8433838B2 (en) * | 2010-09-17 | 2013-04-30 | International Business Machines Corporation | Remote multiplexing devices on a serial peripheral interface bus |
TWI507031B (zh) * | 2010-10-15 | 2015-11-01 | Altek Corp | 影像處理方法 |
CN102035530A (zh) * | 2010-10-15 | 2011-04-27 | 北京工业大学 | 用于高性能vlsi的最优保持管多米诺电路 |
US20120097985A1 (en) * | 2010-10-21 | 2012-04-26 | Wen-Huang Liu | Light Emitting Diode (LED) Package And Method Of Fabrication |
KR101705045B1 (ko) * | 2010-11-09 | 2017-02-10 | 삼성전자주식회사 | 아날로그 투 디지털 컨버터, 이를 포함하는 이미지 센서 및 아날로그 투 디지털 변환 방법 |
CN102469248B (zh) * | 2010-11-12 | 2016-03-02 | 华晶科技股份有限公司 | 影像拍摄装置及其影像合成方法 |
US9047178B2 (en) * | 2010-12-13 | 2015-06-02 | SanDisk Technologies, Inc. | Auto-commit memory synchronization |
CN102098441B (zh) * | 2010-12-16 | 2016-09-07 | 深圳市经纬科技有限公司 | 基于spi接口的图像数据传输方法及照相设备 |
CN102117342A (zh) * | 2011-01-21 | 2011-07-06 | 中国科学院上海技术物理研究所 | 基于PCI Express总线的多波段红外图像实时采集系统及方法 |
JP5655626B2 (ja) * | 2011-02-24 | 2015-01-21 | ソニー株式会社 | 画像処理装置、および画像処理方法、並びにプログラム |
CN202049481U (zh) * | 2011-03-17 | 2011-11-23 | 冠捷投资有限公司 | 具有主从关系的感测结构 |
JP5713752B2 (ja) * | 2011-03-28 | 2015-05-07 | キヤノン株式会社 | 画像処理装置、及びその制御方法 |
US9077917B2 (en) * | 2011-06-09 | 2015-07-07 | Apple Inc. | Image sensor having HDR capture capability |
US8576653B2 (en) * | 2011-07-01 | 2013-11-05 | United Microelectronics Corp. | Hidden refresh method and operating method for pseudo SRAM |
CN107770462B (zh) * | 2011-12-28 | 2020-09-22 | 株式会社尼康 | 拍摄元件和拍摄装置 |
TWI450159B (zh) * | 2012-03-02 | 2014-08-21 | Pixart Imaging Inc | Optical touch device, passive touch system and its input detection method |
WO2013146039A1 (ja) * | 2012-03-30 | 2013-10-03 | シャープ株式会社 | 半導体記憶装置 |
US9274997B2 (en) * | 2012-05-02 | 2016-03-01 | Smsc Holdings S.A.R.L. | Point-to-point serial peripheral interface for data communication between devices configured in a daisy-chain |
US8943250B2 (en) * | 2012-08-20 | 2015-01-27 | General Electric | Systems and methods for concatenating multiple devices |
US9003091B2 (en) * | 2012-10-18 | 2015-04-07 | Hewlett-Packard Development Company, L.P. | Flow control for a Serial Peripheral Interface bus |
TW201418992A (zh) * | 2012-11-06 | 2014-05-16 | Megawin Technology Co Ltd | 序列周邊介面主裝置之資料傳輸控制方法及裝置 |
CN103092806A (zh) * | 2013-01-18 | 2013-05-08 | 青岛海信宽带多媒体技术有限公司 | 基于spi数据传输时序的数据传输方法和系统 |
KR101444063B1 (ko) * | 2013-03-22 | 2014-09-26 | 주식회사 슈프리마 | 다중 노출을 이용한 광학식 지문 인식 방법 및 장치 |
CN104253188A (zh) * | 2013-06-27 | 2014-12-31 | 展晶科技(深圳)有限公司 | 发光二极管元件的制造方法 |
CN105324985B (zh) * | 2013-07-04 | 2018-11-23 | 株式会社尼康 | 电子设备及摄像元件 |
TWI631854B (zh) * | 2013-08-05 | 2018-08-01 | 日商新力股份有限公司 | Conversion device, imaging device, electronic device, conversion method |
CN103595503B (zh) * | 2013-10-25 | 2016-08-17 | 福建升腾资讯有限公司 | 一种基于串口装置的频率编解码通讯系统 |
CN104714908B (zh) * | 2013-12-13 | 2017-12-19 | 上海华虹集成电路有限责任公司 | 支持主从模式的spi接口 |
JP6519095B2 (ja) * | 2013-12-19 | 2019-05-29 | カシオ計算機株式会社 | コンテンツ出力システム、コンテンツ出力装置、コンテンツ出力方法及びプログラム |
US9402039B2 (en) * | 2014-01-10 | 2016-07-26 | Omnivision Technologies, Inc. | Dual conversion gain high dynamic range sensor |
CN103838700A (zh) * | 2014-02-20 | 2014-06-04 | 江苏理工学院 | 电平复用控制串行通信装置及其通信方法 |
KR102149187B1 (ko) * | 2014-02-21 | 2020-08-28 | 삼성전자주식회사 | 전자 장치와, 그의 제어 방법 |
CN103888693B (zh) * | 2014-03-31 | 2017-06-13 | 广东威创视讯科技股份有限公司 | 图像传输装置 |
EP2938064B1 (en) * | 2014-04-24 | 2016-10-12 | Axis AB | Method and apparatus for determining exposure setting |
JP6478488B2 (ja) * | 2014-06-18 | 2019-03-06 | キヤノン株式会社 | Ad変換装置及び固体撮像装置 |
CN105208294A (zh) * | 2014-06-20 | 2015-12-30 | 中兴通讯股份有限公司 | 一种拍照的方法及装置 |
JP6454490B2 (ja) * | 2014-07-17 | 2019-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置及びランプ信号の制御方法 |
JP6552336B2 (ja) * | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN104318205A (zh) * | 2014-09-29 | 2015-01-28 | 上海箩箕技术有限公司 | 信息检测显示装置及其检测方法和显示方法 |
WO2016050750A1 (en) * | 2014-09-29 | 2016-04-07 | Biosurfit S.A. | Positioning mechanism |
US10732771B2 (en) * | 2014-11-12 | 2020-08-04 | Shenzhen GOODIX Technology Co., Ltd. | Fingerprint sensors having in-pixel optical sensors |
US10114789B2 (en) * | 2015-01-08 | 2018-10-30 | Samsung Electronics Co., Ltd. | System on chip for packetizing multiple bytes and data processing system including the same |
CN105991935B (zh) * | 2015-02-15 | 2019-11-05 | 比亚迪股份有限公司 | 曝光控制装置及曝光控制方法 |
US20160246396A1 (en) * | 2015-02-20 | 2016-08-25 | Qualcomm Incorporated | Interactive touchscreen and sensor array |
JP2016161653A (ja) * | 2015-02-27 | 2016-09-05 | 富士フイルム株式会社 | 撮影装置および方法 |
EP3306864B1 (en) * | 2015-05-26 | 2019-09-25 | Hitachi Automotive Systems, Ltd. | Communication device and communication system |
CN204695305U (zh) * | 2015-06-11 | 2015-10-07 | 北京海泰方圆科技有限公司 | 一种基于复合产品的spi通信接口及该复合产品 |
CN106663156B (zh) | 2015-06-30 | 2020-08-07 | 华为技术有限公司 | 一种指纹解锁屏幕的方法和终端 |
TWI576653B (zh) * | 2015-07-31 | 2017-04-01 | 廣達電腦股份有限公司 | 曝光控制系統及其方法 |
US9819889B2 (en) * | 2015-08-07 | 2017-11-14 | Omnivision Technologies, Inc. | Method and system to implement a stacked chip high dynamic range image sensor |
CN105100631B (zh) * | 2015-09-08 | 2019-03-01 | Oppo广东移动通信有限公司 | 一种自动连续间隔拍照、摄像的方法及移动终端 |
US10003761B2 (en) * | 2015-09-10 | 2018-06-19 | Canon Kabushiki Kaisha | Imaging device having multiple analog-digital conversion circuits that perform multiple ad conversions for a singular one of a pixel signal |
US9990316B2 (en) * | 2015-09-21 | 2018-06-05 | Qualcomm Incorporated | Enhanced serial peripheral interface |
CN205038640U (zh) * | 2015-09-25 | 2016-02-17 | 河南思维自动化设备股份有限公司 | 一种解决spi总线通信延时的spi设备 |
US10157590B1 (en) * | 2015-12-15 | 2018-12-18 | Apple Inc. | Display with localized brightness adjustment capabilities |
CN105578076A (zh) * | 2015-12-18 | 2016-05-11 | 广东欧珀移动通信有限公司 | 成像方法、成像装置及电子装置 |
CN106303269A (zh) * | 2015-12-28 | 2017-01-04 | 北京智谷睿拓技术服务有限公司 | 图像采集控制方法和装置、图像采集设备 |
US9743025B2 (en) * | 2015-12-30 | 2017-08-22 | Omnivision Technologies, Inc. | Method and system of implementing an uneven timing gap between each image capture in an image sensor |
CN106778459B (zh) | 2015-12-31 | 2021-02-12 | 深圳市汇顶科技股份有限公司 | 指纹识别的方法及其指纹识别装置 |
JP6885344B2 (ja) * | 2016-01-20 | 2021-06-16 | ソニーグループ株式会社 | 固体撮像装置およびその駆動方法、並びに電子機器 |
KR102554495B1 (ko) * | 2016-01-22 | 2023-07-12 | 에스케이하이닉스 주식회사 | 수평적 커플링 구조를 갖는 불휘발성 메모리셀 및 이를 이용한 메모리 셀 어레이 |
US9800807B2 (en) * | 2016-02-26 | 2017-10-24 | Intel Corporation | Image sensor operation for shutter modulation and high dynamic range |
US10043051B2 (en) * | 2016-03-07 | 2018-08-07 | Microsoft Technology Licensing, Llc | Triggered image sensing with a display |
JP6747158B2 (ja) * | 2016-08-09 | 2020-08-26 | ソニー株式会社 | マルチカメラシステム、カメラ、カメラの処理方法、確認装置および確認装置の処理方法 |
CN206470775U (zh) * | 2016-12-23 | 2017-09-05 | 敦捷光电股份有限公司 | 生物特征辨识装置 |
CN110036627B (zh) * | 2016-12-27 | 2021-03-05 | 松下知识产权经营株式会社 | 摄像装置、照相机以及摄像方法 |
CN106897701B (zh) * | 2017-02-27 | 2019-08-23 | 京东方科技集团股份有限公司 | 光学指纹识别模组与显示面板、显示装置 |
CN107066859A (zh) | 2017-03-15 | 2017-08-18 | 广东欧珀移动通信有限公司 | 一种指纹解锁方法及装置 |
CN107071153B (zh) | 2017-03-21 | 2019-07-02 | Oppo广东移动通信有限公司 | 一种指纹模组模式切换方法及装置 |
KR102331464B1 (ko) * | 2017-04-18 | 2021-11-29 | 삼성전자주식회사 | 디스플레이 영역에 형성된 생체 정보 센싱 영역을 이용한 생체 정보 획득 방법 및 이를 지원하는 전자 장치 |
CN107135049B (zh) * | 2017-04-19 | 2020-08-14 | 北京航天自动控制研究所 | 一种面向离散数据流的可靠异步通信方法 |
CN107122742B (zh) * | 2017-04-27 | 2019-12-03 | 上海天马微电子有限公司 | 一种显示装置及其指纹识别方法、以及电子设备 |
CN107194326A (zh) | 2017-04-28 | 2017-09-22 | 广东欧珀移动通信有限公司 | 指纹采集方法及相关产品 |
CN107169447A (zh) * | 2017-05-12 | 2017-09-15 | 贵州中信云联科技有限公司 | 基于人脸识别的医院自助系统 |
EP3462731B1 (en) * | 2017-09-29 | 2021-11-10 | Canon Kabushiki Kaisha | Imaging device, imaging system, and moving body |
US10735459B2 (en) * | 2017-11-02 | 2020-08-04 | International Business Machines Corporation | Service overload attack protection based on selective packet transmission |
KR102460750B1 (ko) * | 2018-02-13 | 2022-10-31 | 삼성전기주식회사 | Ois 기능을 갖는 카메라 장치 및 그 통신 방법 |
JP6753985B2 (ja) * | 2018-08-10 | 2020-09-09 | シャープ株式会社 | アナログデジタル変換器および固体撮像素子 |
-
2018
- 2018-07-05 TW TW107123381A patent/TW201915818A/zh unknown
- 2018-07-13 TW TW107124245A patent/TW201915542A/zh unknown
- 2018-07-23 TW TW107125354A patent/TWI728254B/zh active
- 2018-07-26 CN CN201810831550.6A patent/CN109638632A/zh active Pending
- 2018-07-27 TW TW107126012A patent/TWI679539B/zh active
- 2018-07-27 CN CN201810841816.5A patent/CN109635794A/zh active Pending
- 2018-07-31 TW TW107126454A patent/TWI719332B/zh active
- 2018-08-09 CN CN201810901250.0A patent/CN109634063B/zh active Active
- 2018-08-09 CN CN201810901261.9A patent/CN109634883B/zh active Active
- 2018-08-17 CN CN201810938577.5A patent/CN109639957B/zh active Active
- 2018-09-18 CN CN201811085989.5A patent/CN109857281A/zh active Pending
- 2018-10-05 TW TW107135207A patent/TWI667653B/zh active
- 2018-10-05 TW TW107135211A patent/TWI703865B/zh active
- 2018-10-05 TW TW107135206A patent/TWI667919B/zh active
- 2018-10-08 CN CN201811167749.XA patent/CN109640010B/zh active Active
- 2018-10-08 CN CN201811167338.0A patent/CN109639988B/zh active Active
- 2018-10-08 CN CN201811167356.9A patent/CN109637565B/zh active Active
- 2018-11-30 US US16/205,242 patent/US10609296B1/en active Active
-
2019
- 2019-01-21 US US16/252,716 patent/US10592448B2/en active Active
- 2019-01-30 US US16/261,594 patent/US10885296B2/en active Active
- 2019-02-01 US US16/264,706 patent/US10990781B2/en active Active
- 2019-02-13 US US16/274,263 patent/US10580483B1/en active Active
- 2019-03-14 US US16/352,833 patent/US10810395B2/en active Active
- 2019-03-25 US US16/362,706 patent/US20200012837A1/en not_active Abandoned
- 2019-03-26 US US16/364,197 patent/US20200018986A1/en not_active Abandoned
- 2019-05-22 US US16/419,025 patent/US10997386B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI716142B (zh) * | 2019-10-08 | 2021-01-11 | 大陸商廣州印芯半導體技術有限公司 | 光學識別模組 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201915818A (zh) | 光學識別模組 | |
TWI633493B (zh) | 取像裝置 | |
US10331932B2 (en) | Optical sensor device and a fingerprint sensor apparatus | |
US10091402B1 (en) | Image capture apparatus | |
US10198650B2 (en) | Image capture apparatus | |
TWI408429B (zh) | 光學感測模組 | |
WO2021042806A1 (zh) | 指纹感测模块与电子装置 | |
US10502971B1 (en) | Image capturing module | |
TW201909026A (zh) | 取像裝置 | |
WO2022143535A1 (zh) | 指纹模组及电子设备 | |
CN112753036A (zh) | 纹路图像获取装置、显示装置及准直部件 | |
US10713465B2 (en) | Image capture apparatus | |
TW201735335A (zh) | 覆晶式影像感測器封裝 | |
US10832028B2 (en) | Optical fingerprint module | |
KR20220140763A (ko) | Cmos 센서의 각도 필터의 구조 | |
US20180293422A1 (en) | Optical Fingerprint Module | |
US11262592B2 (en) | Optical identification module | |
TWI716142B (zh) | 光學識別模組 | |
US11928888B2 (en) | Image acquisition device | |
TWM567416U (zh) | 取像裝置 | |
CN114072859A (zh) | 包括准直结构的生物特征成像装置和在生物特征成像装置中成像的方法 | |
TWM571523U (zh) | 光學識別模組 | |
CN112766017A (zh) | 光学识别模块 | |
TWM558941U (zh) | 取像裝置 | |
WO2021036326A1 (zh) | 指纹感测模块与电子装置 |