CN106067418B - 蚀刻处理方法 - Google Patents

蚀刻处理方法 Download PDF

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Publication number
CN106067418B
CN106067418B CN201610252496.0A CN201610252496A CN106067418B CN 106067418 B CN106067418 B CN 106067418B CN 201610252496 A CN201610252496 A CN 201610252496A CN 106067418 B CN106067418 B CN 106067418B
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Prior art keywords
etching
film
treatment method
frequency power
gas
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Chinese (zh)
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CN106067418A (zh
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富永翔
高山航
五十岚義树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Plasma Technology (AREA)
CN201610252496.0A 2015-04-22 2016-04-21 蚀刻处理方法 Active CN106067418B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910508471.6A CN110246760B (zh) 2015-04-22 2016-04-21 蚀刻方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015087900A JP6498022B2 (ja) 2015-04-22 2015-04-22 エッチング処理方法
JP2015-087900 2015-04-22

Related Child Applications (1)

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CN201910508471.6A Division CN110246760B (zh) 2015-04-22 2016-04-21 蚀刻方法

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CN106067418A CN106067418A (zh) 2016-11-02
CN106067418B true CN106067418B (zh) 2019-07-05

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CN201910508471.6A Active CN110246760B (zh) 2015-04-22 2016-04-21 蚀刻方法

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US (1) US9666446B2 (enExample)
EP (2) EP3621102A1 (enExample)
JP (1) JP6498022B2 (enExample)
KR (1) KR102035890B1 (enExample)
CN (2) CN106067418B (enExample)

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Also Published As

Publication number Publication date
JP2016207840A (ja) 2016-12-08
EP3086359A1 (en) 2016-10-26
EP3621102A1 (en) 2020-03-11
US20160314986A1 (en) 2016-10-27
CN110246760A (zh) 2019-09-17
JP6498022B2 (ja) 2019-04-10
CN106067418A (zh) 2016-11-02
KR20160125896A (ko) 2016-11-01
US9666446B2 (en) 2017-05-30
CN110246760B (zh) 2023-02-17
KR102035890B1 (ko) 2019-10-23
EP3086359B1 (en) 2019-09-11

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