CN105321801B - 封装件的对准标记设计 - Google Patents

封装件的对准标记设计 Download PDF

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Publication number
CN105321801B
CN105321801B CN201410848060.9A CN201410848060A CN105321801B CN 105321801 B CN105321801 B CN 105321801B CN 201410848060 A CN201410848060 A CN 201410848060A CN 105321801 B CN105321801 B CN 105321801B
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China
Prior art keywords
alignment mark
hole
packaging part
molding material
pipe core
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CN105321801A (zh
Inventor
黄立贤
陈宪伟
蕭景文
叶德强
郑心圃
余振华
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种封装件包括器件管芯、将器件管芯模制在其中的模制材料、穿透模制材料的通孔、以及穿透模制材料的对准标记。重分布线位于模制材料的一侧上。重分布线电连接至通孔。本发明涉及封装件的对准标记设计。

Description

封装件的对准标记设计
相关申请的交叉引用
本申请要求以下临时提交的美国专利申请的优先权：2014年5月29日提交的标题为“Through Integrated Fan-out Via Alignment Mark Structrure”的美国专利申请第62/004,365号，其全部内容结合于此作为参考。
技术领域
本发明涉及封装件的对准标记设计。
背景技术
现代电路的制造通常包括多个步骤。首先在半导体晶圆上制造集成电路，该半导体晶圆包括多个重复的半导体芯片，每个半导体芯片均包括集成电路。然后将半导体芯片从晶圆上锯切且进行封装。封装工艺具有两个主要目的：用于保护易碎的半导体芯片以及将内部集成电路连接至外部引脚。
随着对更多功能的需求的不断增多，发展出接合两个以上的封装件以扩展封装件的集成能力的叠层封装(PoP)技术。基于高集成度，由于部件之间的缩短的连接路径，改善了产生的PoP封装件的电性能。通过使用PoP技术，封装件设计变得更为灵活和简单。也缩减了上市时间。
发明内容
为了解决现有技术中存在的问题，根据本发明的一个方面，提供了一种封装件，包括：器件管芯；模制材料，将所述器件管芯模制在所述模制材料中；通孔，穿透所述模制材料；对准标记，穿透所述模制材料；以及重分布线，位于所述模制材料的一侧上，其中，所述重分布线电连接至所述通孔。
在上述封装件中，所述对准标记是电浮动的。
在上述封装件中，所述对准标记和电连接至所述对准标记的导电部件在所述封装件内部完全绝缘。
在上述封装件中，所述对准标记包括与所述模制材料的表面共面的表面，其中，所述对准标记的所述表面的全部与介电材料接触。
在上述封装件中，所述对准标记包括与所述器件管芯的金属柱的表面共面的表面，其中，所述对准标记的所述表面的全部与介电材料接触。
在上述封装件中，包括多个通孔，其中，所述多个通孔中的每个均与所述模制材料的相对两侧上的导电部件互连，并且其中，所述多个通孔限定设计区域，所述器件管芯位于所述设计区域中，并且所述对准标记位于所述设计区域外部。
在上述封装件中，所述对准标记的第一表面和所述通孔的第一表面共面，并且所述对准标记的第二表面和所述通孔的第二表面共面。
根据本发明的另一方面，还提供了一种封装件，包括：器件管芯，包括位于所述器件管芯的表面处的金属柱；多个通孔，围绕所述器件管芯；对准标记，其中，所述对准标记是电浮动的；模制材料，将所述器件管芯、所述对准标记以及所述多个通孔模制在所述模制材料中；多条第一重分布线，位于所述模制材料的第一侧上；以及多条第二重分布线，位于所述模制材料的第二侧上，所述第二侧与所述第一侧相对，其中，所述多条第一重分布线通过所述多个通孔电连接至所述多条第二重分布线。
在上述封装件中，所述对准标记包括与所述多个通孔的第一表面共面的第一表面以及与所述多个通孔的第二表面共面的第二表面。
在上述封装件中，所述对准标记的所述第一面的全部与介电材料接触。
在上述封装件中，所述对准标记的所述第二表面的全部与额外的介电材料接触。
在上述封装件中，所述对准标记的所述第二表面与所述封装件中的重分布线接触。
在上述封装件中，所述对准标记的表面与所述金属柱的表面共面。
在上述封装件中，与所述封装件中的所有通孔相比，所述对准标记最接近所述封装件的拐角。
根据本发明的又一方面，还提供了一种方法，包括：同时形成通孔和对准标记；布置邻近所述通孔和所述对准标记的器件管芯，其中，使用用于对准的所述对准标记来实施所述布置；将所述通孔、所述对准标记以及所述器件管芯模制在模制材料中；实施平坦化以暴露所述通孔和所述对准标记；以及形成电连接至所述通孔的多条第一重分布线。
在上述方法中，还包括：在形成所述多条第一重分布线之前，形成介电层以覆盖所述模制材料、所述器件管芯、所述通孔以及所述对准标记；以及形成暴露所述通孔的开口，其中，所述多条第一重分布线延伸到所述开口内以连接至所述通孔，并且其中，使用用于对准的所述对准标记来实施所述开口的形成。
在上述方法中，在形成所述多条第一重分布线之后，所述对准标记仍被所述介电层覆盖。
在上述方法中，所述平坦化导致暴露所述器件管芯的金属柱，并且所述多条第一重分布线中的一条电连接至所述金属柱。
在上述方法中，还包括实施锯切工艺以将所述模制材料分成多个封装件，所述器件管芯、所述对准标记以及所述通孔位于所述多个封装件的同一个封装件中。
在上述方法中，在所述锯切工艺之后，所述对准标记仍是电浮动的。
附图说明
当结合附图进行阅读时，根据下面详细的描述可以最佳地理解本发明的各方面。应该注意的是，根据工业中的标准实践，各种部件没有按比例绘制。实际上，为了清楚的讨论，各种部件的尺寸可以被任意增大或减小。
图1至图14是根据一些实施例的封装件的在制造中的中间阶段的截面图和顶视图；
图15至图19是根据一些实施例的包括通孔和对准标记的示例性封装件的顶视图；以及
图20示出了根据一些实施例的形成封装件的工艺流程。
具体实施方式
为了实现本发明的不同特征，以下公开内容提供了多个不同实施例或实例。下面描述了部件和布置的具体实例以简化本发明。当然，这些仅仅是实例而不旨在限制。例如，在以下描述中，在第二部件上方或上形成第一部件可以包括以直接接触的方式形成第一部件和第二部件的实施例，并且也可以包括第一部件和第二部件之间可以形成额外部件，使得第一部件和第二部件可以不直接接触的实施例。另外，在各个实例中，本发明可以重复参考标号和/或字母。这种重复是为了简化和清楚的目的，并且其本身并不表示所论述的各个实施例和/或配置之间的关系。
此外，在此可使用诸如“在…之下”、“在…下面”、“下部”、“在…上面”、以及“上部”等的空间相对术语，以容易地描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除图中所示的方位之外，空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其它方式定位(旋转90度或在其他方位)，并且在此使用的空间相对描述符可以同样地作出相应的解释。
图1至图14示出了根据实施例的封装件的在制造中的中间阶段的截面图和顶视图。图20中所示的工艺流程300也示意性地示出了图1至图14中所示的步骤。在后续的论述中，参考图20中的工艺步骤论述了图1至图14中所示的工艺步骤。
图1示出了载体20和形成在载体20上的释放层22。载体20可以是玻璃载体、陶瓷载体等。载体20可以具有圆形的顶视形状且可以是硅晶圆的尺寸。例如，载体20可以具有8英寸的直径、12英寸的直径等。释放层22可以由聚合物基材料(诸如，光热转换(LTHC)材料)形成，该材料可以与载体20一起从将在后续步骤中形成的上面的结构去除。在一些实施例中，释放层22由环氧树脂基热释放材料形成。在其他实施例中，释放层22由紫外线(UV)胶形成。可以以液体形成分配释放层22并且对其进行固化。在可选实施例中，释放层22是层压膜并且层压至载体20上。释放层22的顶面是水平的并且具有高共面度。
介电层24形成在释放层22上。在一些实施例中，介电层24由聚合物形成，聚合物也可以是诸如聚苯并恶唑(PBO)、聚酰亚胺、苯并环丁烯(BCB)等的光敏材料，使用光刻工艺可以容易图案化这些材料。在可选实施例中，介电层24由诸如氮化硅的氮化物、诸如氧化硅的氧化物、磷硅酸盐玻璃(PSG)、硼硅酸盐玻璃(BSG)、硼掺杂的磷硅酸盐玻璃(BPSG)等形成。
参考图2，重分布线(RDL)26形成在介电层24上方。RDL 26也称为背侧RDL，因为他们位于器件管芯36的背侧上(图5A)。RDL 26可以包括RDL 26B并且可以或可以不包括RDL26A，如果形成RDL 26A，则它们将电连接至随后形成的对准标记。RDL 26的形成可以包括在介电层24上方形成晶种层(未示出)，在晶种层上方形成诸如光刻胶的图案化掩模(未示出)，并且然后在暴露的晶种层上实施金属镀。然后去除图案化的掩模和晶种层的被图案化掩模所覆盖的部分，从而留下如图2所示的RDL 26。在一些实施例中，晶种层包括钛层和位于钛层上方的铜层。例如，可以使用物理气相沉积(PVD)来形成晶种层。例如，可以使用化学镀来实施镀工艺。
参考图3，在RDL 26上形成介电层28。介电层28的底面可以与RDL 26和介电层24的顶面相接触。在一些实施例中，介电层28由聚合物形成，该聚合物可以是诸如PBO、聚酰亚胺、BCB等的光敏材料。在可选实施例中，介电层28由诸如氮化硅的氮化物、诸如氧化硅的氧化物、PSG，BSG，BPSG等形成。然后图案化介电层28以在其中形成开口30。因此，通过介电层28中的开口30暴露RDL 26。开口30包括30B并且可以或可以不包括30A。例如，如果不形成RDL 26A，则也不形成开口30A。
参考图4A，形成金属柱32(包括32A和32B)。在整个说明书中，金属柱32可选地称为通孔32，因为金属柱32穿透随后形成的模制材料。根据本发明的一些实施例，通孔32通过镀形成。通孔32的镀可以包括形成位于层28上方并且延伸到开口30内的毯式晶种层(未示出)，形成并图案化光刻胶(未示出)，以及在晶种层的通过光刻胶中的开口暴露的部分上镀通孔32。然后去除光刻胶和晶种层的被光刻胶覆盖的部分。通孔32的材料可以包括铜、铝等。通孔32具有杆的形状。通孔32的顶视形状可以是圆形、矩形、正方形、六边形等。
通孔32包括32A和32B。图4B示出了通孔32A和32B的顶视图。在一些实施例中，通孔32B布置成行和列。最外面的通孔32B的外边界可以限定区域34，区域34在下文中将称为设计区域34。将没有通孔32B和RDL形成在设计区域34的外部，并且将没有器件管芯布置在设计区域34的外部。通孔32B用于电气地内部连接通孔32B的相对两端上的部件。另一方面，通孔32A用作对准标记并且由此有时称为对准标记32A。通孔32A可以不用于器件和部件的电连接。
根据本发明的一些实施例，通孔32A布置在设计区域34的外部。根据可选实施例，通孔32A也可以布置在设计区域34的内部。在一些实施例中，为了容易辨认，通孔32A可以具有与通孔32B不同的顶视形状和/或尺寸。例如，如图4B所示，通孔32A具有矩形或正方形的顶视形状，而通孔32B具有圆形的顶视形状。
图5A示出了器件管芯36的布置。器件管芯36通过管芯附接膜(DAF)45粘附至介电层28，该管芯附接膜45可以是粘合膜。器件管芯36可以是其中包括逻辑晶体管的逻辑器件管芯。在一些示例性实施例中，器件管芯36是设计为用于移动应用的管芯并且可以是电源管理集成电路(PMIC)管芯、收发器(TRX)管芯等。尽管示出了一个器件管芯36，但可以在介电层28上方布置多个器件管芯。
在一些示例性实施例中，金属柱38(诸如，铜柱)预先形成为器件管芯36的顶端部分，其中金属柱38电连接至诸如器件管芯36中的晶体管的集成电路器件。在一些实施例中，聚合物填充相邻的金属柱38之间的间隙以形成顶部介电层40，其中顶部介电层40也可以位于钝化层42的顶部上并且与钝化层42相接触。在一些实施例中，聚合物层40可以由PBO形成。在一些实施例中，钝化层42包括氮化硅、氮氧化硅、氧化硅或它们的多层。
接下来，模制材料44模制在器件管芯36上。模制材料44填充相邻的通孔32之间的间隙以及通孔32和器件管芯36之间的间隙。模制材料44可以包括模塑料、模制底部填充物、环氧树脂、或树脂。模制材料44的顶面高于金属柱38的顶端。
接下来，实施诸如化学机械抛光(CMP)步骤或研磨步骤的平坦化以减薄模制材料44，直到暴露出通孔32和金属柱38。由于研磨，通孔32的顶端与金属柱38的顶面基本上平齐(共面)，并且与模制材料44的顶面基本上共面。
图5B示意性地示出了图5A中的结构的顶视图。在器件管芯36的布置中，对准标记32A用于对准器件管芯36的位置以确保器件管芯36布置在期望的位置并且器件管芯36不从它预期的位置和方向偏移或旋转。通过确定器件管芯36相对于对准标记32A的位置的相对位置来实施对准。
图5C示出了包括布置在载体20上的包括多个器件管芯36和通孔32的顶视图，该载体20在顶视图中具有圆形形状。与器件管芯的形成类似，根据本发明的实施例形成的结构被锯切成多个封装件，每个封装件均包括器件管芯36和其周围的通孔32。每个器件管芯36的布置可以通过与相同封装件中的相应的对准标记32A对准来对准。
参考图6，形成介电层46。在一些实施例中，介电层46由诸如PBO、聚酰亚胺等的聚合物形成。在可选实施例中，介电层46由氮化硅、氧化硅等形成。在介电层46中形成开口48以暴露出通孔32B和金属柱38。可以通过光刻工艺形成开口48。根据本发明的一些实施例，在通孔32A上方没有形成开口，并且因此没有暴露通孔32A。在可选实施例中，可以通过一些开口48暴露通孔32A。
根据一些实施例，也使用对准标记32A作为对准标记来实施开口48的形成，从而使得开口48可以与相应的通孔32和金属柱38精确地对准。
接下来，参考图7，形成重分布线(RDL)50以连接至金属柱38和通孔32B。RDL 50还可以互连金属柱38和通孔32B。RDL 50包括位于介电层46上方的金属迹线(金属线)以及延伸到开口48内以电连接至通孔32B和金属柱38的通孔。在一些实施例中，以镀工艺形成RDL50，其中每个RDL 50均包括晶种层(未示出)和镀在晶种层上方的金属材料。晶种层和镀的材料可以由相同或不同的材料形成。RDL 50可以包括金属或金属合金，其包括铝、铜、钨以及它们的合金。
参考图8，在RDL 50和介电层46上方形成介电层52。可以使用聚合物形成介电层52，该聚合物可以选自与介电层46的侯选材料相同的侯选材料。例如，介电层52可以包括PBO、聚酰亚胺、BCB等。可选地，介电层52可以包括诸如氧化硅、氮化硅、碳化硅、氮氧化硅等的非有机介电材料。在介电层52中也形成开口54以暴露RDL 50。可以通过光刻工艺实施开口54的形成。
图9示出了RDL 56的形成，RDL 56通过开口54(图8)电连接至RDL 50。可以采用与用于形成RDL 50类似的方法和材料来形成RDL 56。RDL50和56也称为前侧RDL，因为它们位于器件管芯36的前侧上。
如图10所示，形成额外的介电层57(可以是聚合物)以覆盖RDL 56和介电层52。介电层57也可以是聚合物，该聚合物选自与用于形成介电层46和52的相同的侯选聚合物。然后在介电层57中形成开口59以暴露RDL 56的金属焊盘部分。
图11示出了根据一些示例性实施例的凸块下金属化层(UBM)60和电连接件62的形成。UBM 60的形成可以包括沉积和图案化。电连接件62的形成可以包括在UBM 60的暴露部分上布置焊球以及然后回流该焊球。在可选实施例中，电连接件62的形成包括实施镀步骤以在RDL 56上方形成焊料区以及然后回流该焊料区。电连接件62还可以包括金属柱或者金属柱和焊料盖，它们也可以通过镀形成。在整个说明书中，包括器件管芯36、通孔32、模制材料44以及位于模制材料44的相对两侧上的相应的RDL和介电层的组合结构将被称为封装件100，封装件100可以是具有圆形顶视形状的复合晶圆。
接下来，将封装件100与载体20脱粘(de-bonded)。粘合层22也从封装件100上清理掉。图12中示出了产生的结构。可以通过将诸如UV光或激光的光投射到粘合层22上以分解粘合层22来实施脱粘。在一些实施例中，封装件100还通过粘合剂66粘附至载体64，其中，电连接件62面对粘合剂66并且可以与粘合剂66相接触。
然后将胶带68粘附在暴露的介电层24上。然后对胶带68实施激光标刻以形成识别标记70。由此识别标记70是胶带68中的凹槽并且可以承载相应封装件的识别信息。识别标记70可以包括字母、数字、或其他可识别图案。可以通过激光钻孔来实施识别标记70的形成。
参考图13，在胶带68和介电层24中形成开口72，并且由此RDL 26的金属焊盘部分暴露于开口72。可以通过激光钻孔或光刻工艺来实施开口72的形成。
在后续的步骤中，将载体64和粘合剂66从封装件100去除。实施管芯锯切步骤以将封装件100锯切成多个封装件102，每个封装件102均包括器件管芯36、通孔32B，以及对准标记32A。在根据一些实施例的管芯锯切步骤中，切口74保持远离对准标记32A。因此，产生的封装件102包括对准标记32A和通孔32B。
图14示出了封装件102与另一个封装件200的接合。根据一些实施例，通过焊料区76实施该接合，焊料区76将RDL26B中的金属焊盘与上面的封装件200中的金属焊盘相连接。在一些实施例中，封装件200包括器件管芯202，器件管芯202可以是诸如静态随机存取存储器(SRAM)管芯、动态随机存取存储器(DRAM)管芯等的存储器管芯。在一些示例性实施例中，存储器管芯也可以接合至封装件衬底204。
在图13或图14所示的封装件102中，对准标记32A可以与封装件102和200中的集成电路器件电绝缘。在一些实施例中，对准标记32A可以是电浮动的。如图14所示，根据一些实施例，通孔32A可以与诸如RDL 26A一些金属部件物理连接。在可选实施例中，不形成虚线区78中的金属部件。这可以通过不形成图2中的RDL 26A和图3中的开口30A来实现。当不形成金属部件RDL 26A时，对准标记32A的相对表面(示出的顶面和底面)的全部均不与任何导电部件相接触。另外，每个对准标记32A和作为整体与对准标记32A电连接的所有导电部件(诸如RDL 26A，如果存在)可以通过介电层和模制材料44在封装件102内部完全绝缘。
图15示意性地示出了封装件100(图13)以及位于封装件100中的封装件102的顶视图。封装件102的相对尺寸(相对于封装件100的尺寸)被放大，以便示出通孔32B和对准标记32A的细节。如图15所示，封装件102通过划线104彼此分隔开，划线104是锯切口必须穿过的区域。实际切口示出为106并且比划线104更窄。切口106和划线104的宽度被设计为使得随着在封装件100的锯切中的变化，切口106仍位于划线104内。
对准标记32A位于划线104外部并且由此将不被锯切。这样是有利的，因为对准标记32A具有与器件管芯36(图13)的厚度相同的高度并且具有大体积，并且由此对准标记32A可能不利地影响锯切工艺。另一方面，对准标记32A位于设计区域34外部并且由此在对准工艺器件能够容易地识别。
根据一些实施例，直径D1(或通孔32B的长度和宽度)在约150μm和约300μm的范围内。对准标记32A的长度L1和宽度W1在约100μm和约300μm的范围内。对准标记32A和划线104之间的间隔D2和D3等于或大于对准标记32A的相应长度L1和宽度W1。然而，应该理解，整个说明书中所引用的值仅仅是实例并且可以改变成不同的值。
在图15中示出的实施例中，在每个封装件102中，存在两个对角布置的对准标记32A，其中对准标记32A邻近封装件102的相对拐角。图16示出了根据可选实施例的封装件102的顶视图，其中两个对准标记32A形成为邻近封装件102的两个拐角，其中这两个拐角是由封装件102的相同边形成的相邻的拐角。在图17中的实施例中，对准标记32A形成为邻近封装件102的四个拐角中的每个。
图18示出了根据又一些可选实施例的封装件102的顶视图，其中封装件102包括两个以上的器件管芯。例如，在示出的示例性封装件102中，存在两个器件管芯36，每个器件管芯36均被形成环的多个通孔32B所包围。连接的设计区域34包括两个器件管芯36和其中相应的周围的通孔32B。对准标记32A同样布置在连接的设计区域34的外部。
在图18中，两个器件管芯36与平行于相应的封装件102的边缘的直线相对准。图19示出了封装件102的顶视图，其中器件管芯36未对准。在这些实施例中，设计区域34不是简单的矩形区域。反之，设计区域34包括两个相互连接的矩形区域。
在图15至图19中的每幅图中，对准标记32A也用于在形成相应的封装件102时的对准。对准工艺可以参考图6和图7找到。
图20示意性地示出了用于图1至图14中的工艺的工艺流程300。在此简略地论述该工艺流程。工艺流程的细节可以在图1至图14的论述中找到。在步骤302中，如图1至图3所示，在载体上形成背侧RDL 26。在图20的工艺流程的步骤304中，形成通孔32B和对准标记32A以连接至背侧RDL 26，并且图4A和图4B中示出了相应的形成工艺。在图20中的工艺流程的步骤306中，布置器件管芯36，并且图5A、图5B和图5C中示出了相应的形成工艺。使用用于对准的对准标记32A来实施器件管芯36的布置。在图20中的工艺流程的步骤308和310中，形成前侧RDL 50和56，并且图6至图9中示出了相应的形成工艺。也可以使用用于对准的对准标记32A来实施底部介电层中的开口的形成。在图20中的工艺流程的步骤312中，形成UBM60和焊料区62，并且图10和图11中示出了相应的形成工艺。在图20中的工艺流程的步骤314中，将胶带68粘附至相应的封装件的背侧，并且图12中示出了相应的形成工艺。在图20中的工艺流程的步骤316中，在形成UBM和焊料区的情况下，形成开口。锯切封装件，并且进一步实施接合工艺。图13和图14中示出了相应的形成工艺。
本发明的实施例具有一些有利的特征。通过为多个封装件中的每个形成对准标记，可以精确地布置器件管芯。由此基本上消除或至少减少了器件管芯相对于通孔的偏移和旋转。另外，在形成通孔(用于电连接)的同时形成对准标记，并且由此不会引起额外的制造成本。
根据本发明的一些实施例，封装件包括器件管芯、将器件管芯模制在其中的模制材料，穿透模制材料的通孔，以及穿透模制材料的对准标记。重分布线位于模制材料的一侧上。重分布线电连接至通孔。
根据本发明的可选实施例，封装件包括器件管芯，该器件管芯包括位于器件管芯的表面处的金属柱，围绕器件管芯的多个通孔，以及对准标记。对准标记是电浮动的。模制材料将器件管芯、对准标记以及多个通孔模制在其中。多条第一重分布线位于模制材料的第一侧上。多条第二重分布线位于模制材料的第二侧上，第二侧与第一侧相对。多条第一重分布线通过多个通孔电连接至多条第二重分布线。
根据本发明的又一些可选实施例，一种方法包括同时形成通孔和对准标记以及布置邻近通孔和对准标记的器件管芯。使用用于对准的对准标记来实施布置的步骤。该方法还包括将通孔、对准标记以及器件管芯模制在模制材料中并且实施平坦化以暴露通孔、对准标记以及器件管芯的金属柱。形成多条再分配线以电连接至通孔和器件管芯的金属柱。
上面论述了若干实施例的部件，使得本领域普通技术人员可以更好地理解本发明的各个方面。本领域普通技术人员应该理解，可以很容易地使用本发明作为基础来设计或更改其他用于达到与在此所介绍实施例相同的目的和/或实现相同优点的工艺和结构。本领域普通技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，可以进行多种变化、替换以及改变。

Claims (18)

1.一种封装件，包括：
器件管芯；
模制材料，将所述器件管芯模制在所述模制材料中；
通孔，穿透所述模制材料；
对准标记，穿透所述模制材料，其中，所述对准标记和电连接至所述对准标记的导电部件在所述封装件内部完全绝缘；以及
重分布线，位于所述模制材料的一侧上，其中，所述重分布线电连接至所述通孔。
2.根据权利要求1所述的封装件，其中，所述对准标记是电浮动的。
3.根据权利要求1所述的封装件，其中，所述对准标记包括与所述模制材料的表面共面的表面，其中，所述对准标记的所述表面的全部与介电材料接触。
4.根据权利要求1所述的封装件，其中，所述对准标记包括与所述器件管芯的金属柱的表面共面的表面，其中，所述对准标记的所述表面的全部与介电材料接触。
5.根据权利要求1所述的封装件，包括多个通孔，其中，所述多个通孔中的每个均与所述模制材料的相对两侧上的导电部件互连，并且其中，所述多个通孔限定设计区域，所述器件管芯位于所述设计区域中，并且所述对准标记位于所述设计区域外部。
6.根据权利要求1所述的封装件，其中，所述对准标记的第一表面和所述通孔的第一表面共面，并且所述对准标记的第二表面和所述通孔的第二表面共面。
7.一种封装件，包括：
器件管芯，包括位于所述器件管芯的表面处的金属柱；
多个通孔，围绕所述器件管芯；
对准标记，其中，所述对准标记是电浮动的；
模制材料，将所述器件管芯、所述对准标记以及所述多个通孔模制在所述模制材料中；
多条第一重分布线，位于所述模制材料的第一侧上；以及
多条第二重分布线，位于所述模制材料的第二侧上，所述第二侧与所述第一侧相对，其中，所述多条第一重分布线通过所述多个通孔电连接至所述多条第二重分布线。
8.根据权利要求7所述的封装件，其中，所述对准标记包括与所述多个通孔的第一表面共面的第一表面以及与所述多个通孔的第二表面共面的第二表面。
9.根据权利要求8所述的封装件，其中，所述对准标记的所述第一表面的全部与介电材料接触。
10.根据权利要求9所述的封装件，其中，所述对准标记的所述第二表面的全部与额外的介电材料接触。
11.根据权利要求9所述的封装件，其中，所述对准标记的所述第二表面与所述封装件中的重分布线接触。
12.根据权利要求7所述的封装件，其中，所述对准标记的表面与所述金属柱的表面共面。
13.根据权利要求7所述的封装件，其中，与所述封装件中的所有通孔相比，所述对准标记最接近所述封装件的拐角。
14.一种形成封装件的方法，包括：
同时形成通孔和对准标记；
布置邻近所述通孔和所述对准标记的器件管芯，其中，使用用于对准的所述对准标记来实施所述布置；
将所述通孔、所述对准标记以及所述器件管芯模制在模制材料中；
实施平坦化以暴露所述通孔和所述对准标记；以及
形成电连接至所述通孔的多条第一重分布线；
在形成所述多条第一重分布线之前，形成介电层以覆盖所述模制材料、所述器件管芯、所述通孔以及所述对准标记；以及
形成暴露所述通孔的开口，其中，所述多条第一重分布线延伸到所述开口内以连接至所述通孔，并且其中，使用用于对准的所述对准标记来实施所述开口的形成。
15.根据权利要求14所述的方法，其中，在形成所述多条第一重分布线之后，所述对准标记仍被所述介电层覆盖。
16.根据权利要求14所述的方法，其中，所述平坦化导致暴露所述器件管芯的金属柱，并且所述多条第一重分布线中的一条电连接至所述金属柱。
17.根据权利要求14所述的方法，还包括实施锯切工艺以将所述模制材料分成多个封装件，所述器件管芯、所述对准标记以及所述通孔位于所述多个封装件的同一个封装件中。
18.根据权利要求17所述的方法，其中，在所述锯切工艺之后，所述对准标记仍是电浮动的。
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