CN103247587A - 互连止裂器结构及方法 - Google Patents

互连止裂器结构及方法 Download PDF

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CN103247587A
CN103247587A CN2012102445693A CN201210244569A CN103247587A CN 103247587 A CN103247587 A CN 103247587A CN 2012102445693 A CN2012102445693 A CN 2012102445693A CN 201210244569 A CN201210244569 A CN 201210244569A CN 103247587 A CN103247587 A CN 103247587A
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crack arrester
hollow cylinder
crack
arrester
semiconductor device
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CN103247587B (zh
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余振华
史达元
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明提供了用于阻止裂纹的系统和方法。一种实施例包括将止裂器置入半导体管芯和衬底之间的连接件。止裂器可以为空心或者实心圆柱形并且可被放置成便于阻止穿过止裂器的任何裂纹扩展。本发明还公开了互连止裂器结构及方法。

Description

互连止裂器结构及方法
技术领域
本发明涉及半导体技术领域，更具体地，涉及互连止裂器结构及方法。
背景技术
通常，半导体管芯可使用诸如球栅阵列或者可控塌陷芯片连接(C4)焊料凸块的技术接合至另一衬底(例如，有机印制电路板)。在一个这样的工艺中，可使用诸如电镀、焊剂漏印(paste screening)或者球架的方法将焊料凸块形成在半导体管芯和/或者衬底上，然后将焊料回流焊成期望的凸块形状。一旦形成了焊料凸块，将半导体管芯上的接触件与衬底上与它们对应的接触件对准，焊料凸块位于接触件之间。一旦对准，对焊料凸块再次进行回流焊并使其液化，其中液化的焊料流到接触焊盘并浸湿接触焊盘，从而提供半导体管芯和衬底之间的电连接和物理连接。
然而，半导体管芯可具有与衬底非常不同的热膨胀系数。因此，当半导体管芯接合至衬底并且他们都经受热机械循环(被用于模拟系统电源开启和关闭循环以符合JEDEC可靠性测试需求)时，半导体管芯和衬底会在加热循环期间会膨胀到不同的长度并且在冷却循环期间收缩到不同的长度。这种膨胀会导致形成在互连半导体管芯和衬底的焊接点处的应力。
这种问题对在半导体管芯和衬底之间的连接尤其普遍。具体地，由于半导体管芯和衬底之间的热膨胀系数失配造成的应力很强以致实际上可能在互连半导体管芯和衬底的焊接点中产生裂纹。而且，这些裂纹可能扩展至整个焊接点，从而降低或者甚至毁坏半导体管芯和衬底之间的电互连和/或物理连接。这种毁坏可能导致部分无用并因此需要完全重新制造。
发明内容
为了解决现有技术中所存在的问题，根据本发明的一个方面，提供了一种半导体器件，包括：
在衬底上的导电焊盘；以及
自所述导电焊盘延伸的第一止裂器，所述第一止裂器具有环形并且沿所述导电焊盘的外部区域设置。
在可选实施例中，所述第一止裂器具有为所述环形的第一开口。
在可选实施例中，半导体器件进一步包括为环形的第二止裂器，其中所述第二止裂器具有较小的直径并且相对于所述第一止裂器横向偏移。
在可选实施例中，所述第一止裂器具有为所述环形的第一开口并且所述第二止裂器具有为所述环形的第二开口。
在可选实施例中，所述环形是断环形。
在可选实施例中，所述断环形包括多个重叠的圆弧。
在可选实施例中，所述第一止裂器是沿所述导电焊盘的所述外部区域布置的多个止裂器之一。
在可选实施例中，所述半导体器件进一步包括位于所述导电焊盘的中心区域内的第二止裂器。
根据本发明的另一个方面，还提供了一种半导体器件，包括：
在衬底上的凸块下金属层，所述凸块下金属层包括中心区域以及围绕所述中心区域的外部区域；
在所述外部区域中所述凸块下金属化层上的第一止裂器，所述第一止裂器具有第一圆形。
在可选实施例中，所述第一止裂器是不连续的圆形。
在可选实施例中，半导体器件进一步包括在所述凸块下金属层上的第二止裂器，所述第二止裂器具有第二圆形。
在可选实施例中，半导体器件进一步包括具有第二圆形的第二止裂器以及具有第三圆形的第三止裂器，所述第一止裂器、所述第二止裂器以及所述第三止裂器在所述外部区域中相互横向分隔开。
在可选实施例中，所述第一止裂器、所述第二止裂器以及第三止裂器是实心圆形。
在可选实施例中，所述半导体器件进一步包括第四止裂器，具有第四圆形并且位于凸块下金属层的所述中心区域内。
在可选实施例中，所述半导体器件，进一步包括：支撑衬底，具有面向所述凸块下金属层的导电层；位于所述导电层上的第二止裂器；以及接触所述第一止裂器和所述第二止裂器的导电材料。
根据本发明的又一个方面，还提供了一种半导体器件，包括：
在第一半导体衬底上的导电区域；以及
在所述导电区域上的第一止裂器，所述第一止裂器包括引线接合到所述第一半导体衬底上的所述导电区域的引线。
在可选实施例中，所述第一止裂器进一步包括引线接合到所述第一半导体衬底上的所述导电区域的多根引线。
在可选实施例中，所述多根引线具有小于200μm的第一高度。
在可选实施例中，所述引线包括圆柱形。
在可选实施例中，所述导电区域是凸块下金属层。
附图说明
为更完整的理解实施例及其优点，现将结合附图所进行的以下描述作为参考，其中：
图1A-图1E示出了根据一实施例的位于半导体管芯上的止裂器；
图2A-图2B示出了根据一实施例的互连半导体管芯和支撑衬底的焊接点；
图3A-图3B示出了根据一实施例的止裂器还形成在支撑衬底上的另一种
实施例；
图4A-图4C示出了根据一实施例的止裂器是多个圆柱的另一种实施例；
图5A-图5C示出了根据一实施例的止裂器是沿半导体管芯和衬底的任一个或者两个上的接触焊盘的外部和内部布置的多个圆柱的又一种实施例；以及
图6A-图6B示出了根据实一施方式的止裂器是接合到半导体管芯的一根或者多根引线的又一种实施例。
除非另有说明，不同附图中的相应标号和符号通常指相应部件。将附图绘制成清楚地示出实施例的相关方面而不必须成比例绘制。
具体实施例
下面，详细讨论本发明各实施例的制造和使用。然而应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅示出了制造和使用本发明的具体方式，而不用于限制本发明的范围。
本发明实施例将描述具体环境中的实施例，即用于晶圆级芯片尺寸封装件中的半导体管芯和衬底之间的焊接点(C4或者层叠封装(POP)互连结构)的止裂器。然而，本发明实施例也可应用于其他接合工艺。
现在参考附图1A，示出了半导体IC管芯100，其具有半导体基体衬底101、有源器件103、金属层105、第一钝化层107、第一接触焊盘109、第二钝化层111、凸块下金属层(UBM)113、以及第一止裂器115。半导体基体衬底101可包括掺杂的或者非掺杂的体硅，或者绝缘体上硅衬底的有源层(SOI)。通常，SOI衬底包括诸如硅、锗、硅锗、SOI、绝缘体上硅锗(SGOI)或者它们的组合的半导体材料层。其他可以使用的衬底包括多层衬底、梯度衬底或者混合取向衬底。
有源器件103(为了清楚，图1A仅示出了有源器件103中的一个)可形成在半导体基体衬底101上。作为本领域普通技术人员会理解，有源器件103可包括各种各样的有源和无源器件例如电容器、电阻器、电感器等，它们可用于为半导体IC管芯100产生期望结构和功能要求的设计。有源器件103可使用任何合适的方法形成在半导体基体衬底101内，否则形成在半导体基体衬底101的表面上。
金属层105可形成在半导体基体衬底101和有源器件103上方，并且被设计成连接各种有源器件103以形成功能电路。尽管在图1A中示出为单层，金属层105可由介电材料(例如，低k介电材料)和导电材料(例如，铜)的交错层形成，并且可通过任何合适的工艺(例如，沉积，镶嵌，双镶嵌等)形成。在一种实施例中，可以有通过至少一个层间介电层(ILD)与半导体基体衬底101隔离的4个金属层，但是金属层105的精确数目取决于半导体IC管芯100的设计。
第一钝化层107可以形成半导体基体衬底101上并在金属层105上方。第一钝化层107可由一种或者多种合适的介电材料制成，例如，氧化硅、氮化硅、低k介电材料(例如，掺碳的氧化物)、极低k介电材料(例如多孔掺碳的二氧化硅)、这些的组合等。第一钝化层107可通过诸如化学气相沉积(CVD)的工艺形成，然而也可以使用任何合适的工艺形成，并且可以具有在大约0.5μm和大约5μm之间的厚度，例如，大约
在第一钝化层107形成之后，可以通过去除部分第一钝化层107形成贯穿第一钝化层107的开口以暴露金属层105的至少一部分。贯穿第一钝化层107的开口使得第一接触焊盘109和金属层105的导电部分之间接触。可以使用合适的光刻掩蔽和蚀刻工艺形成贯穿第一钝化层107的开口，然而也可以使用任何合适的暴露部分金属层105的工艺。
可形成贯穿开口并且在金属层105的导电部分上方的第一接触焊盘109，并且第一接触焊盘109与金属层105的导电部分电接触。第一接触焊盘109可包括铝，但是可选地也可使用诸如铜的其他材料。第一接触焊盘109可以如下方式形成：使用沉积工艺(例如，溅射)来形成材料层(未示出)，然后通过合适的工艺(例如，光刻掩模和蚀刻)去除材料层的部分来形成第一接触焊盘109。然而，也可采用任何其他合适的工艺来形成第一接触焊盘109。第一接触焊盘109可形成为具有在大约0.5μm和大约4μm之间的厚度，例如大约1.45μm。
在第一接触焊盘109形成之后，可在第一接触焊盘109和第一钝化层107上方形成第二钝化层111。第二钝化层111可由聚合物(例如，聚酰亚胺)形成。可选地，第二钝化层111可由与用作第一钝化层107的材料类似的材料形成，例如，碳化硅、氮化硅、低k介电材料、极低k介电材料、它们的组合或者类似物。第二钝化层111可形成为具有在大约2μm和大约15μm之间的厚度，例如大约5μm。
在第二钝化层111形成之后，可通过去除部分第二钝化层111来形成贯穿第二钝化层111的开口以暴露下面第一接触焊盘109的至少一部分。所述开口使得第一接触焊盘109和UBM113之间接触(下面进一步讨论的)所述开口可以使用合适的光刻掩蔽和蚀刻工艺形成，然而也可以使用任何合适的暴露部分第一接触焊盘109的工艺。
在贯穿第二钝化层111的开口以暴露第一触盘109的至少一部分已形成之后，可形成超出开口以及在第二钝化层111上方并且与第一触盘109接触的UBM 113。在一种实施例中，UBM 113可包括三个导电材料层，例如，钛层、铜层以及镍层。然而，本领域普通技术人员会理解存在许多合适的适于UBM 113形成的材料和层的布置，例如，铬/铬-铜合金/铜/金的布置，钨钛/铜/镍的布置，或者钛/铜/镍/金的布置。可以用于UBM 113的任何合适的材料或者不同材料层的组合全部包括在本申请的范围内。
UBM 113可通过在第二钝化层111和第一触盘109上方形成每一层产生。可使用电镀工艺(例如，电化学电镀)实施每一层的形成，然而根据期望的材料其他形成工艺(例如，溅射、蒸发或者PECVD工艺)也可选地可以使用。UBM 113可以形成为具有在大约0.7μm和大约10μm之间的厚度，例如大约3μm。一旦形成了期望的层，可通过合适的光刻掩蔽和蚀刻工艺去除这些层的部分以去除不期望的材料，从而留下期望形状的UBM113，例如，圆形、八角形、方形或者矩形，然而任何期望的形状可选地也可以形成。
第一止裂器115可以形成在UBM 113上方并且与UBM 113物理接触。第一止裂器115可以这种形式放置以及成形：从UBM 113延伸并最终延伸入导电材料207中(图1A中没有示出，但示出在下面的图2A中并且作了讨论)。另外，第一止裂器115可以以这种形式放置并且成形：拦截并制止源自导电材料207边缘的任何裂纹并且阻止裂纹进一步扩展至导电材料207的内部。
图1B示出了第一止裂器115的一种放置和形状，其中图1B是第一止裂器115、UBM 113以及第二钝化层111(第二钝化层111下面的第一接触焊盘109由虚线示出)自上往下的视图。在本实施例中，第一止裂器115可被放置在UBM 113的外边缘附近并且可成形为环形，例如，外边缘靠近UBM 113的整个外围的第一空心圆柱117。本实施例中的第一止裂器115的第一空心圆柱状物117可具有从UBM 113的边缘起小于大约35微米的外径，并且可具有厚度小于大约25μm的壁。
通过将第一止裂器115形成为在UBM 113的外边缘附近的第一空心圆柱117，任何可沿导电材料207(图1B中没有示出，但示出在下面的图2A中并且作了讨论)的外部产生的裂纹将向内扩展并与第一止裂器115垂直相遇。这种垂直的相互作用有助于阻止裂纹进一步扩展入导电材料207中。以这种方式，第一止裂器115可阻止任何裂纹以避免降低导电材料207的性能。
然而，第一止裂器115并不旨在限于如上所述的第一空心圆柱117的形状。图1C-图1E示出了可选地可用于第一止裂器115的其他实施例。例如，图1C示出了第一止裂器115的一种实施例，其包括与第一空心圆柱117共同使用以便阻止可能产生的裂纹扩展的第二空心圆柱119。第一空心圆柱117可类似于上面参考图1B描述的第一空心圆柱117并且其靠近(例如，小于30微米)UBM 113的外边缘并沿UBM 113的外边缘设置。第二空心圆柱119可以设置成自第一空心圆柱117横向向内并且可具有自UBM113的外边缘小于大约65微米的外径，并且可具有厚度小于大约30μm的壁。第二空心圆柱119可与第一空心圆柱117间隔第二距离d2(大于10微米)。
通过除第一空心圆柱117之外还提供第二空心圆柱119，第二空心圆柱119可用作第一空心圆柱117的后备。这样，如果第一空心圆柱117没有制止住已形成的裂纹的扩展，第二空心圆柱119能够制止裂纹进一步穿过导电材料207扩展。在这种方式中，通过用第二空心圆柱119形成第一止裂器115，第一止裂器115可提供甚至更强的保护以阻止裂纹穿过导电材料207扩展并且有助于防止器件故障。
图1D示出第一止裂器115的另一实施例，其中第一止裂器115不是具有如上参考图1C描述的全部完整的空心圆柱，而是具有沿第一空心圆柱117和第二空心圆柱119的壁间隔一段距离设置的开口121。例如，第一空心圆柱117(此处讨论图1D的实施例中或者上述参考图1B讨论的实施例中)可具有围绕第一空心圆柱117等距间隔开的三个开口121(但是不限于3个)。同样地，第二空心圆柱119可具有围绕第二空心圆柱119也以等距间隔开的三个开口121(但是不限于3个)，但是相对于在第一空心圆柱117中的开口121的位置移置了位置。在一种实施例中，开口121可具有在大约5微米和大约50微米之间的第三距离，例如大约25微米。
通过提供围绕第一空心圆柱117和第二空心圆柱119的开口121，开口121可为第一空心圆柱117和第二空心圆柱119提供应力释放的方法。例如，在热循环期间，当第一空心圆柱117和第二空心圆柱119的材料膨胀时，开口121分别允许第一空心圆柱117和第二空心圆柱119膨胀而不会对第一空心圆柱117或者第二空心圆柱119的另外的部分施以推力。因此，降低了由于热化学循环期间膨胀不匹配导致的应力造成的损坏。
图1E示出了第一止裂器115的一种实施例，其中第一止裂器115是由一系列圆弧123组成的断环。圆弧123可被成形为环的一部分，但是可被以重叠方式设置以便拦截源自导电材料207(图1E中没有示出，但是示出在下面的图2中并且作了讨论))的外边缘的任何裂纹。在本实施例中，可以具有厚度可在大约5微米和大约30微米之间(例如，大约15微米)的四个圆弧123。
通过形成断环结构的第一止裂器115，可以实现上面参考图1D描述的类似的应力释放。然而，通过使多个单弧123相互重叠，没有裂纹可穿过其扩展的开口121。因此，可以实现更有效地阻止裂纹，并且可降低或者消除由于裂纹造成的损坏。
然而，作为本领域技术人员会理解，上述环形仅旨在示例说明而不旨在限制实施例。其他保持基本环形但不是完美环形的形状也完全打算作为环形被包括在内。例如，第一止裂器115可以成形为八边形、五边形、六边形等等，然而仍然保持整体上的期望的环形。这些以及任何其他合适的环形全部被包括在本实施例的范围内。
现在返回图1A，可以使用掩蔽和电镀工艺并且以上述参考图1B-1E描述的形状形成第一止裂器115。在一种实施例中，可通过首先在第二钝化层111上方形成光刻胶(未示出)并达到第一止裂器115的期望厚度来形成第一止裂器115。可图案化光刻胶以暴露UBM 113(第一止裂器115会延伸到其)的部分。
在光刻胶被图案化之后，第一止裂器115可被形成在光刻胶的开口内。第一止裂器115可由诸如铜的导电材料形成，然而构造在单独层中的其他导电材料(例如，镍、金或者金属合金、类似物或者它们的组合)也可使用。另外，可使用诸如电镀的工艺，通过使电流流经UBM 113的期望形成第一止裂器115到其上的导电部分，然后将UBM 113浸入到溶液中来形成第一止裂器115。溶液和电流将诸如铜沉积在开口内以便填充和/或溢满光刻胶的开口，从而形成第一止裂器115。然后可使用例如化学机械抛光(CMP)或者湿蚀刻去除在开口外部的多余导电材料。
在第一止裂器115形成之后，可通过诸如在化学溶液中溶解、等离子体灰化或者其他方式的工艺去除光刻胶，据此提高光刻胶的温度直到光刻胶分解并且可被去除。在光刻胶去除之后，第一止裂器115可远离UBM 113延伸在大约5μm和大约60μm之间(例如，40μm)的第一距离d1，然而任何合适的有助于阻止裂纹扩展的距离都可被使用。这种距离是有益的因为它会降低或者阻止裂纹在层附近的绕行并且还可阻止在后续回流焊工艺期间第一止裂器115的消耗。
可选地，为了有助于保护第一止裂器115，势垒层(未示出)可形成在第一止裂器115上方。在一种实施例中，势垒层可由镍、镍/金、钴、钴/金、钒(V)/金、铬(Cr)/金，以及它们的组合形成，并且可使用诸如化学镀的工艺制得。然而，任何合适的方法和材料可以可选地为势垒层所用。
然而，作为本领域技术人员会理解，上述形成第一止裂器115的工艺仅是一种说明，并且并不旨在将实施例限制在这种具体的工艺。相反，所述工艺仅用于示例说明，因为任何用于形成第一止裂器115的合适工艺可选地可以使用。例如，可使用减少性的蚀刻工艺(subtractive etch process)来形成第一止裂器115。在一实施例中，第一止裂器115由诸如镍的材料形成，镍的初始层(未在图1A中示出)可形成在第二钝化层111和UMB 113上方。一旦形成了镍的初始层，可使用例如光刻掩蔽和蚀刻工艺(将从镍层去除或者去掉不期望的材料)图案化镍层以便图案化并且形成在UMB113上的第一止裂器115。
图2A示出了具有第一止裂器115的半导体IC管芯100放置并接合到支撑衬底201上。在一种实施例中，半导体IC管芯100可接合晶圆级芯片规模封装结构中的支撑衬底201。然而，实施例并不旨在限于晶圆级芯片规模封装结构，其可用于任何连接类型。
支撑衬底可具有形成在其上的第二接触焊盘205以及焊料掩模203。可使用支撑衬底201来支撑并且保护半导体IC管芯100，同时还被用于提供半导体IC管芯100上的第一接触焊盘109与外部器件(在图2A中未示出)之间的连接。在一种实施例中，支撑衬底201可为印刷电路板，例如层压衬底，其形成为由高分子材料(例如，双马来酰亚胺三嗪(BT)、FR-4或者ABF等)组成的多个薄层(或者层压制品)的堆叠。然而，可选地，可以使用任何其他合适的衬底(例如，硅中介层、硅衬底、有机硅或者陶瓷衬底等)，并且提供支撑以及与半导体IC管芯100连接的所有这些再分配衬底全部包括在本发明实施例的范围内。
第二接触焊盘205可以以与第一接触焊盘109类似的方式、由与第一接触焊盘109类似的材料形成。例如，第二接触焊盘205可使用诸如溅射，电镀或者化学镀的工艺由铜、镍、镍/金等形成。然而，可选地，可以使用任何合适的用于形成第二接触焊盘205的工艺。
可以形成焊料掩模203以便有助于形成导电材料207。焊料掩模203可以由焊料掩模材料、光刻胶、介电材料或者钝化材料形成。在焊料掩模203是光刻胶材料的实施例中，焊料掩模203可以通过以下方式形成：将光刻胶材料放置到支撑衬底201上，然后将焊料掩模203曝光在射线(例如，UV光)下。然后可显影焊料掩模203以便在暴露第二接触焊盘205时覆盖支撑衬底201。可选地，在焊料掩模203是介电材料(例如，氧化硅或者氮化硅)或者钝化材料(例如，聚酰亚胺)的实施例中，焊料掩模203可形成在支撑衬底201上方并且可使用光刻掩蔽和蚀刻工艺来暴露部分第二接触焊盘205。
一旦焊料掩模203已形成并且被图案化，可以形成穿过焊料掩模203并且与第二接触焊盘205接触的导电材料207。在一种实施例中，导电材料207可以是焊料凸块并且可包括诸如焊膏、锡的材料或者其他合适的材料(例如，银或者铜)。在导电材料207是锡的实施例中，导电材料207可以通过首先用这些通常使用的方法(例如，蒸发、电镀、焊剂漏印、印刷等)形成厚度在大约10μm和大约100μm之间(例如大约50μm)的锡层。
一旦导电材料207形成在第二接触焊盘205上，可以实施回流焊工艺以将导电材料207变形成凸块形状。在回流焊工艺中，导电材料207的温度升高到大约200℃和大约260℃之间，例如大约250℃，并持续在大约10秒和大约60秒之间的时间，例如，大约35秒。实施回流焊工艺使导电材料207部分熔化，然后由于导电材料207的表面张力，导电材料207将其本身拉成期望的凸块形状。导电材料207可具有在大约210μm和大约280μm之间(例如，大约250μm)的直径。
为了使半导体IC管芯100接合到支撑衬底201，将UBM 113与导电材料207对准，然后再实施第二回流焊工艺以便部分液化导电材料207使得其流动并且与UBM 113接触。在回流焊工艺期间，导电材料207还会封装第一止裂器115，从而在导电材料207硬化成固体形态之后将第一止裂器115嵌入导电材料207内。
然而，作为本领域普通技术人员会理解，上面给出的半导体IC管芯100与支撑衬底201接合的描述仅是一种示例性实施例，并不旨在以任何方式限制实施例。可选地，可以使用任何合适的将半导体IC管芯100与支撑衬底接合的方法，例如，将导电材料207形成在UBM 113上或者形成在第一止裂器115上方(代替形成在第二接触焊盘205上)。这些以及所有这些将半导体IC管芯100与支撑衬底201接合的方法全部被包括在本发明实施例的范围内。
由于第一止裂器115位于导电材料207内，可沿导电材料207的外边缘形成(由图2A中线200表示)，并且试图扩展入导电材料207内部的任何裂纹将被第一止裂器115拦截并且阻止扩展。通过阻止这种扩展，将降低或者消除由裂纹200造成的缺陷，从而导致更有弹力和更可靠的互连。
图2B示出了第一止裂器115的第二优点。如果裂纹200能够扩展或者穿过第一止裂器115，由比导电材料207更强的材料制造的第一止裂器115本身不可能损坏。因此，UBM 113和导电材料207未损坏的部分之间的电连接可通过第一止裂器115本身保持。因此，即使导电材料207开裂，第一止裂器115可仍然穿过裂纹200提供半导体IC管芯100和支撑衬底201之间的电连接。
图3A示出了第二止裂器301可形成在第二接触焊盘205上的另一种实施例。通过将第二止裂器301放置在第二接触焊盘205上，第二止裂器301可与第一止裂器115(位于UBM 113上)一起工作以阻止可形成在导电材料207内的裂纹200扩展。在一种实施例中，第二止裂器301可形成、放置并且成形在第二接触焊盘205上以便减少或者阻止可产生在导电材料207中、与第二接触焊盘205的边缘相邻的裂纹200扩展。在一种实施例中并且如图3A中所示，第二止裂器301可使用减少性的蚀刻工艺形成，然而任何其他合适的工艺(如上面描述的关于第一止裂器的工艺)可选地也可被用于形成第二止裂器301。
图3B示出了图3A沿线3B-3B’的从上向下的视图，示出了第二止裂器301可形成为与第一止裂器115类似，并且当从上面看时可以为第三空心圆柱303的形状。在一个实施例中，第三空心圆柱303可具有与上面参考图1A和图1B描述的第一空心圆柱类似的形状并且可用与上面参考图1A和图1B描述的第一空心圆柱类似的工艺和材料形成。然而，与第一止裂器115类似、第二止裂器301可选地可以为任何合适的形状，例如，双空心圆柱、双实心圆柱、实心圆柱、在外壁内具有开口的空心圆柱、断环、这些的组合，或者类似形状。可选地，可以使用任何合适的形状，只要具有该形状的第二止裂器可以与第一止裂器115一起使用并且有助于降低或者阻止可形成的与第二接接触焊盘205相邻的裂纹扩展，并且这样的形状全部被包括在本发明实施例的范围内。
图4A-图4C示出了第一止裂器115的另一实施例，其中第一止裂器115不是形成为一个空心圆柱或者多个空心圆柱并为一个嵌在另一个结构内(如上面参考图1A-图3B示例的)的形状，而是形成为一个或多个空心或实心圆柱或者它们的混合相互分隔的形状。例如，图4A和图4B示出了多个空心圆柱(例如，如图4B所示的第四空心圆柱401、第五空心圆柱403以及第六空心圆柱405)在UBM 113上相互间隔开的实施例，其中图4B是图4A沿线4B-4B’的平面图。在本实施例中，第四空心圆柱401、第五空心圆柱403以及第六空心圆柱405每个都具有在大约15微米和大约60微米之间的外径(例如，大约30微米)，以及在大约5微米和大约20微米之间的内径(例如，大约10微米)。另外，各单个空心圆柱可以沿UBM 113的外部相互等距间隔开。
第四空心圆柱401、第五空心圆柱403和第六空心圆柱405可使用与第一止裂器115的形成(上述参考图1A描述的)类似的工艺形成。例如，第一止裂器115可使用例如掩蔽和电镀工艺、引线接合工艺或者减少性的蚀刻工艺形成。任何合适的工艺可用于形成第四空心圆柱401、第五空心圆柱403和第六空心圆柱405。
然而，作为本领域普通技术人员会理解，尽管如上述围绕UBM 113等距间隔开的第四空心圆柱401、第五空心圆柱403和第六空心圆柱405是一个合适的实施例，然而本发明实施例不限于所述的精确数目和布局。相反，第一止裂器可由任何合适数目的圆柱制成。另外，可以任何方式将这些圆柱布置成靠近在UBM 113的外边缘。所有这些数目和布置的组合全部包括在本发明实施例的范围内。
图4C示出了上述图4B中的第四空心圆柱401、第五空心圆柱403和第六空心圆柱405由第一实心圆柱407、第二实心圆柱409和第三实心圆柱411替代的另一种实施例。通过形成实心圆柱而不是空心圆柱，第一止裂器115制止裂纹扩展的能力通过利用第一实心圆柱407，第二实心圆柱409和第三实心圆柱411得到提高，第一实心圆柱407、第二实心圆柱409和第三实心圆柱411的每个都具有更大的内部支撑以用于制止裂纹扩展。第一实心圆柱407、第二实心圆柱409和第三实心圆柱411可以以与上述参考图4B描述的第四空心圆柱401、第五空心圆柱403和第六空心圆柱405类似的方式放置，或者可选地可以以另一种方式放置。
另外，还可使用任何合适的空心圆柱和实心圆柱的组合。例如，第四空心圆柱401、第五空心圆柱403可与第三实心圆柱411一起使用以便提供裂纹扩展的阻力。可以使用这种组合以及任何其他实心圆柱和空心圆柱的合适组合，并且所有这些组合全部包括在本发明实施例的范围内。
图5A-图5B示出了使用相互间隔的多个空心圆柱的又一种实施例，图5B示出了图5A沿线5A-5A’的平面图。在该实施例中，第四空心圆柱401、第五空心圆柱403和第六空心圆柱405与第七空心圆柱501、第八空心圆柱503、第九空心圆柱505、第十空心圆柱507以及第十一空心圆柱509一起使用，并且这些空心圆柱沿UBM 113的外边缘布置。另外，第十二空心圆柱511可位于UBM 113的中心区域。通过将第十二空心圆柱511放置在UBM 113的中心区内，可利用放置在UBM 113外边缘附近的空心圆柱来拦截可沿外部边缘形成的任何裂纹，并且可利用位于UBM 113中心区域内的第十二空心圆柱511来拦截在UBM 113外边缘附件的空心圆柱之间扩展的任何裂纹。因此，外部空心圆柱和第十二空心圆柱511的组合可被用于在裂纹一直扩展使得穿过导电材料207之前来降低或者阻止裂纹扩展。
第七空心圆柱501、第八空心圆柱503、第九空心圆柱505、第十空心圆柱507以及第十一空心圆柱509可以形成得与上面参考图4A-图4B描述的第四空心圆柱401、第五空心圆柱403和第六空心圆柱405类似。例如，第七空心圆柱501、第八空心圆柱503、第九空心圆柱505、第十空心圆柱507以及第十一空心圆柱509可使用例如掩蔽和电镀工艺、引线接合工艺或者减少性的蚀刻工艺形成。可使用任何合适的工艺来形成第七空心圆柱501、第八空心圆柱503、第九空心圆柱505、第十空心圆柱507以及第十一空心圆柱509。
图5C示出了第一实心圆柱407、第二实心圆柱409和第三实心圆柱411与第四实心圆柱513、第五实心圆柱517、第六实心圆柱517、第七实心圆柱519、第八实心圆柱521一起使用并且沿UBM 113外部区域以环布置的类似实施例。另外，第九实心圆柱523可被放置在UBM 113的中心区域以便拦截可穿过由在UBM 113外部区域中的实心圆柱组成的环扩展的任何裂纹。
图6A和图6B示出了可用于形成图4C中实心圆柱止裂器407、409和411或者可用于形成图5C中实心圆柱止裂器407至523的可选工艺。在该实施例中，引线601(包括诸如铜、金或铝、这些的组合或类似物的材料)可接合到UBM 113，或者如果UBM 113不是期望的，引线601可直接接合到第一接触焊盘109。引线601可使用例如引线接合工艺以期望的形状接合到UBM 113或者第一接触焊盘109。一旦引线601以球形或者楔形接合到UBM 113，垂直于UBM焊盘的引线的长度可被切割到期望的长度，例如在大约100μm和大约300μm之间的长度(例如大约200μm)，可使用EFO(electronic flame off，电子点火)或剪刀或者其他类型的刀片切割机制来进行切割。
在一种实施例中，引线601可涂有保护层603(没有在图6A-图6B中单独示出)。保护层603可以为诸如钯、镍、金、这些的组合或类似物的保护材料，并且可以在引线601接合到UBM 113之前由制造商置于到引线601上，或者可选地可以在引线601已接合并且被切割成期望的长度后置于在引线601上。在一种实施例中，保护层603可通过电镀工艺、学镀工艺等形成，然而也可以使用任何合适的工艺来保护引线601。
根据一种实施例，提供了一种半导体器件，包括在衬底上的导电焊盘。第一止裂器自导电焊盘延伸，第一止裂器具有环形并且沿导电层的外部区域设置。
根据另一种实施例，提供了一种半导体器件，包括在衬底上的凸块下金属层。所述凸块下金属层包括中心区域以及围绕所述中心区域的外部区域。第一止裂器位于外部区域中的凸块下金属层上，所述第一止裂器具有第一圆形。
根据又一种实施例，提供了一种半导体器件，包括在第一半导体衬底上的导电区以及在导电区上的第一止裂器。第一止裂器包括引线接合到第一半导体衬底上的导电区的引线。
尽管已经详细地描述了本发明及其优点，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。例如，形成止裂器的材料和方法可以改变，然而依然包括在本发明本实施例的范围内。另外，可以调整止裂器的精确形状以有助于阻止或者减少裂纹的扩展。
而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明采用的相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，这样的工艺、机器、制造、材料组分、装置、方法或步骤应该包括在所附权利要求的范围内。

Claims (10)

1.一种半导体器件，包括：
在衬底上的导电焊盘；以及
自所述导电焊盘延伸的第一止裂器，所述第一止裂器具有环形并且沿所述导电焊盘的外部区域设置。
2.如权利要求1所述的半导体器件，其中所述第一止裂器具有为所述环形的第一开口。
3.如权利要求1所述的半导体器件，进一步包括为环形的第二止裂器，其中所述第二止裂器具有较小的直径并且相对于所述第一止裂器横向偏移。
4.如权利要求3所述的半导体器件，其中所述第一止裂器具有为所述环形的第一开口并且所述第二止裂器具有为所述环形的第二开口。
5.如权利要求1所述的半导体器件，其中所述环形是断环形。
6.一种半导体器件，包括：
在衬底上的凸块下金属层，所述凸块下金属层包括中心区域以及围绕所述中心区域的外部区域；
在所述外部区域中所述凸块下金属化层上的第一止裂器，所述第一止裂器具有第一圆形。
7.如权利要求6所述的半导体器件，其中所述第一止裂器是不连续的圆形。
8.如权利要求7所述的半导体器件，进一步包括在所述凸块下金属层上的第二止裂器，所述第二止裂器具有第二圆形。
9.一种半导体器件，包括：
在第一半导体衬底上的导电区域；以及
在所述导电区域上的第一止裂器，所述第一止裂器包括引线接合到所述第一半导体衬底上的所述导电区域的引线。
10.如权利要求16所述的半导体器件，其中所述第一止裂器进一步包括引线接合到所述第一半导体衬底上的所述导电区域的多根引线。
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CN112997314B (zh) * 2019-08-16 2022-12-09 京东方科技集团股份有限公司 显示背板及其制作方法、显示装置
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US20190326228A1 (en) 2019-10-24
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