CN1893051A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1893051A
CN1893051A CNA2006101000254A CN200610100025A CN1893051A CN 1893051 A CN1893051 A CN 1893051A CN A2006101000254 A CNA2006101000254 A CN A2006101000254A CN 200610100025 A CN200610100025 A CN 200610100025A CN 1893051 A CN1893051 A CN 1893051A
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China
Prior art keywords
external connection
connection terminals
semiconductor element
convex external
convex
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Granted
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CNA2006101000254A
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CN100495694C (zh
Inventor
西村隆雄
熊谷欣一
高岛晃
中村公一
合叶和之
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Socionext Inc
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Fujitsu Ltd
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Publication of CN1893051A publication Critical patent/CN1893051A/zh
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Publication of CN100495694C publication Critical patent/CN100495694C/zh
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Abstract

一种半导体器件，包括在其主表面上设置有外部连接端子焊盘的半导体元件。该半导体元件经由多个凸状外部连接端子和一个连接部件连接到支撑板上的导电层，所述多个凸状外部连接端子设置于该外部连接端子焊盘上，并且该连接部件同时覆盖所述多个凸状外部连接端子。

Description

半导体器件
技术领域
本发明总的涉及半导体器件，特别是涉及一种具有电极连接结构的半导体器件，其中设置于半导体元件的主表面上的凸状电极连接并固定于导电层，该导电层选择性设置在支撑板的主表面上。
背景技术
其中半导体元件以所谓的倒装状态(face down state)安装于支撑板上的半导体器件已经投入使用。在该半导体器件中，支撑板的基本材料是绝缘树脂，如玻璃环氧树脂。支撑板是通过层叠多个的布线板而形成的，所述布线板表面上选择性设置有铜(Cu)或类似材料构成的导电层。设置在半导体元件主表面上的凸状电极连接到选择性设置在支撑板主表面上的导电层。外部连接端子(如球状电极端子)设置于选择性设置在支撑板另一主表面上的导电层表面上。
在这种结构下，金(Au)球通过丝球焊(wire ball bonding)方法压力固定并连接到位于半导体元件的主表面上的外部连接端子焊盘上，由此形成具有基座部分和从该基座部分突出的部分的凸状外部连接端子。如果必要的话，可对从该基座部分突出的部分进行平坦化处理。具有这种结构的端子，即由软金属，(如金(Au))制成的金属线形成并具有基座部分和从该基座部分突出的部分的端子，被称为球状凸点(ball bump)。
由于这种具有基座部分和从该基座部分突出的部分的端子的表面面积较大，该端子能够通过导电部件(如焊料)容易地连接并固定到支撑板上的导电层。
这种连接结构可低成本实现。因此，这种结构适用于具有几个至几百个外部连接端子的较小型半导体元件。参见日本专利申请公报2-163950和日本专利申请公报10-117065。
为了形成上述半导体器件，在设置于支撑板主表面上的导电层表面上选择性设置导电部件(如焊料)之后，半导体元件的凸状外部连接端子与该导电部件接触。在此状态下，将该导电部件加热至熔点或高于其熔点的温度以使其熔化。
此后，将温度降低至导电部件的熔点或低于熔点，如室温，由此使导电部件固化。因此，半导体元件的凸状外部连接端子机械和电连接到与支撑板上的导电层。
但是，在如上所述的该实例中由于应用升温和降温处理，由半导体元件和支撑板之间热膨胀系数不同导致的应力被集中在位于半导体元件凸状外部连接端子和支撑板上的导电层之间的导电部件上。因此，导电部件有可能产生裂纹，因此导致半导体元件的凸状外部连接端子和支撑板上的导电层之间的电连接断开。
即使在温度降低后不立即产生裂纹，应力仍会集中并残留在半导体元件的凸状外部连接端子和支撑板上的导电层之间的导电部件上。因此，在紧随上述处理之后的制造工序中由于温度变化或震动而可能产生裂纹。
此外，即使在制造工序中没有产生裂纹，在半导体器件实际工作时产生裂纹的可能性仍存在，因而半导体器件的可靠性会降低。
在将薄基板(例如双面布线板)用作支撑板的情况下，该基板的翘曲度可能较大。所以，在此情况下，有可能产生裂纹。
发明内容
有鉴于此，本发明的实施例提供一种新颖且实用的半导体器件以解决上述一个或多个问题。
本发明的一个技术方案可提供一种半导体器件，其能够实现半导体元件的凸状外部连接端子与支撑板上的导电层之间的高可靠性的机械连接及电连接。
根据本发明的实施例，本发明提供一种半导体器件，包括半导体元件，其主表面上设置有外部连接端子焊盘。其中，该半导体元件经由多个凸状外部连接端子和一个连接部件连接到支撑板上的导电层，所述多个凸状外部连接端子设置于该外部连接端子焊盘上；以及该连接部件同时覆盖所述多个凸状外部连接端子。
根据本发明的实施例，本发明提供一种半导体器件，包括：半导体元件，支撑板、以及连接部件。其中该半导体元件包括：半导体衬底；设置于该半导体衬底主表面上的外部连接端子焊盘；以及设置于所述外部连接端子焊盘上的多个凸状外部连接端子。该支撑板包括：绝缘衬底；导电层，其设置于该绝缘衬底的主表面上；以及绝缘层，其设置于该绝缘衬底的主表面上以选择性覆盖该导电层。该连接部件设置为同时覆盖所述多个凸状外部连接端子，并将所述多个凸状外部连接端子固定到未被该绝缘层覆盖的导电层部分。
根据本发明的实施例，本发明提供一种半导体器件，包括：半导体元件；以及支撑板。在该半导体元件中，多个外部连接端子焊盘设置于半导体衬底的主表面上，并且至少一个第一凸状外部连接端子设置于所述外部连接端子焊盘上。在该支撑板中，设置有与所述外部连接端子焊盘相对应的多个导电层，并且至少一个第二凸状外部连接端子设置于所述导电层上。其中，所述第一凸状外部连接端子经由连接部件连接到所述导电层；所述第二凸状外部连接端子经由该连接部件连接到所述外部连接端子焊盘。。
根据本发明的实施例，本发明提供一种半导体器件，包括：支撑板；以及半导体元件，其安装于布线板上，该布线板安装于该支撑板上，该半导体元件经由该布线板连接到该支撑板。其中，多个半导体元件外部连接端子焊盘设置于该半导体元件的半导体衬底的主表面上，该主表面面对该布线板；至少一个第一凸状外部连接端子设置于所述半导体元件外部连接端子焊盘上；多个布线板外部连接端子焊盘设置于该布线板的主表面上，该主表面面对该半导体元件；至少一个第二凸状外部连接端子设置于所述布线板外部连接端子焊盘上；所述第一凸状外部连接端子经由连接部件连接到所述布线板外部连接端子焊盘；所述第二凸状外部连接端子经由该连接部件连接到所述半导体元件外部连接端子焊盘。
根据上述半导体器件，至少两个凸状外部连接端子设置于半导体元件的单个外部连接端子焊盘上。
因此，半导体元件的单个外部连接端子焊盘上的凸状外部连接端子和支撑板上的导电层相互面对的面积大小增加约一倍。换而言之，由于半导体元件的凸状外部连接端子和支撑板上的导电层相互面对的面积增加，即使由于温度升高或降低而产生的应力集中或存留于半导体元件的凸状外部连接端子和支撑板上的导电层之间，该应力也在一较宽范围内分散。
因此，位于半导体元件的凸状外部连接端子和支撑板上的导电层之间的连接部件的整个区域内产生裂纹的可能性大幅降低。
所以，实现了半导体元件和支撑板之间高可靠性的机械连接和电连接。
在结合附图的下述详细描述中，本发明的其它目的、特点和优点将变得更为明显。
附图说明
图1为本发明第一实施例的半导体器件的剖面图；
图2为本发明第一实施例的半导体器件的平面图，其示出支撑板主表面上的导电层的结构；
图3本发明第一实施例的半导体器件的变化例的平面图，其示出该变化例的支撑板主表面上的导电层的结构；
图4为用于本发明第一实施例的半导体器件的半导体元件凸状外部连接端子的平面及剖面图；
图5为示出本发明的第一实施例的半导体器件的制造工序的剖面图；
图6为半导体元件的主表面的平面图，其中凸状外部连接端子设置于本发明第二实施例的半导体器件上；
图7为本发明第二实施例的半导体器件的剖面图；
图8为本发明第三实施例的半导体器件的剖面图；
图9为本发明第四实施例的半导体器件的剖面图；
图10为图9虚线框内部分的放大图；
图11为图1所示的半导体器件的剖面图，其中本发明的第四实施例的半导体器件的半导体元件的外部连接端子焊盘和布线板的外部连接端子焊盘之间的连接结构应用于该半导体器件；
图12为本发明的第四实施例的半导体器件的制造工序的剖面图；
图13为本发明的第五实施例的半导体器件的剖面图；
图14为图13虚线框内部分的放大图；
图15为本发明的第五实施例的半导体器件的制造过程的剖面图。
具体实施方式
以下参照图1到图15说明本发明的实施例。
【第一实施例】
图1示出本发明第一实施例的半导体器件，其中半导体元件的凸状外部连接端子和支撑板上的导电层之间机械连接和电连接。此处，图1为本发明第一实施例的半导体器件的剖面图。
参见图1，该半导体器件包括支撑板11。支撑板11的基本材料是绝缘树脂，如玻璃环氧树脂。支撑板11通过层叠多个布线板而形成，所述布线板表面上选择性设置有由铜(Cu)或类似材料制成的导电层。支撑板11可被称为内插板或布线板。
由铜(Cu)制成的导电层12A选择性设置于支撑板11的主表面上。导电层12A包括布线层以及导电层，半导体元件100的凸状外部连接端子103A和103B(也可统称为凸状外部连接端子103)连接在该导电层处。除了与半导体元件100的凸状外部连接端子103A和103B连接的区域外的导电层12A被阻焊层13A选择性覆盖。换而言之，阻焊层13A露出导电层12A中的一块区域，该区域为连接半导体元件100的区域。
半导体元件100为半导体集成电路，其中包括硅(Si)半导体衬底101，并由公知的半导体制造方法形成。
本发明适用于诸如砷化镓(GaAs)的化学半导体用作半导体衬底的情况。
在本实施例中，多个外部连接端子焊盘102选择性设置于半导体衬底101的主表面上。例如，可在半导体衬底101主表面四边的附近并沿其四边设置外部连接端子焊盘102。或者，可在半导体衬底101主表面的相对两边的附近并沿其相对两边设置外部连接端子焊盘102。两凸状外部连接端子103A和103B设置于外部连接端子焊盘102上以形成一条线。
换而言之，在外部连接端子焊盘102上设置凸状外部连接端子103A和103B，以使凸状外部连接端子103A和103B沿垂直于半导体元件100边缘部分延伸方向的方向形成一条线。
图1中，未示出形成于半导体元件100的硅(Si)半导体衬底101中的有源元件和/或无源元件以及形成于半导体元件100主表面上的多层布线层和/或再布线层。
外部连接端子焊盘102由铝(Al)，铜(Au)，铜铝合金(如Al95％-Cu5％)及其它材料构成。另外，凸状外部连接端子103通过以下工序形成。金(Au)球通过丝球焊(wire ball bonding)方法压力固定并连接于半导体元件100的主表面上的外部连接端子焊盘102上，由此形成了凸状外部连接端子103的基座部分。另外，与该基座部分一体形成从凸状外部连接端子103的基座部分突出的凸状部分。必要时，可对该从该基座部分突出的部分进行平坦化处理。
优选地，在最上层(即外部连接端子焊盘102的露出表面)上通过电解电镀方法、蒸镀方法等方法形成金(Au)层。
半导体元件100的凸状外部连接端子103A和103B以及支撑板11上对应的导电层12A都被由焊料或导电粘合剂构成的连接部件14所覆盖，由此建立机械连接和电连接。两个凸状外部连接端子103A和103B以较大的接触面积连接并固定于导电层12A。
换而言之，半导体元件100以倒装芯片(面向下)的状态安装并固定于支撑板11的主表面上。
另外，在半导体元件100和支撑板11的主表面之间设置主要成分是环氧基树脂的底部填充部件15。
另一方面，在支撑板11的另一主表面上选择性设置导电层12B，导电层12B用于设置外部连接端子16并包括布线层。导电层12B选择性被阻焊层13B覆盖。阻焊层13B限定外部连接端子16的设置区域。外部连接端子16的主要成分是焊料，并设置于未被阻焊层13B覆盖(即露出)的导电层12B上。
支撑板11上的外部连接端子16的结构并非仅限于本实施例中的结构。例如，外部连接端子16可设置于支撑板11主表面上的半导体元件100的外围，其中半导体100安装于该主表面上。另外，外部连接端子16的设置结构可从引线接合结构、球栅阵列(BGA)结构及其它结构中适当选择。
另外，支撑板11并非仅限于上述多层布线板。例如，在单个绝缘板的前后表面上均设置有导电层的双面布线板、在单个绝缘板的单一表面上设置有导电层的单面布线板、以及其它基板也可用作支撑板11。
图2示出支撑板11主表面上的导电层12A的平面图，半导体元件100的凸状外部连接端子103A和103B连接在该导电层12A处。图2示出了三个导电层12A设置为形成一条线的情况。
在图2-(a)所示的实例中，导电层12A的连接区域200未被阻焊层13A覆盖，凸状外部连接端子103连接在该连接区域200处。导电层12A具有恒定的宽度。在连接区域200中，圆形201表示半导体元件100的凸状外部连接端子103A和103B连接的部分。
在图2-(b)所示的实例中，导电层12A的连接区域200未被阻焊层13A覆盖，凸状外部连接端子103连接在该连接区域200处。图2-(b)中的导电层12A具有与图2-(a)中的导电层12A相比较宽的部分。在连接区域200中，圆形201表示半导体元件100的凸状外部连接端子103A和103B连接的部分。
根据图2-(b)中的实例，较之于图2-(a)中的实例，能够增加连接区域200上可容纳(receive)的连接部件14的数量。因此，可以使凸状外部连接端子103A和103B与导电层12A之间的连接变得牢固。
另一方面，在图2-(c)所示的实例中，导电层12A的连接区域200未被阻焊层13A覆盖，凸状外部连接端子103连接于该连接区域200处。该导电区域12A同时具有较宽和较窄的部分。导电区域12A的较窄部分位于较宽部分之间，而凸状外部连接端子103A和103B连接在这些较宽部分。在连接区域200中，圆形201表示半导体元件100的凸状外部连接端子103A和103B连接的部分。
根据图2-(c)中的实例，较之于图2-(a)中的实例，能够增加连接区域200上可容纳的连接部件14的数量。另外，由于位于凸状外部连接端子103A和103B连接部位之间的部分具有狭窄的宽度，从而能够容易地将连接部件14的数量控制到指定的不过多数量。
在此结构下，能够使凸状外部连接端子103A和103B与导电层12A之间的连接变得牢固。另外，即使半导体元件100的外部连接端子焊盘102的焊盘间距微小，仍能够防止发生由于相邻的外部连接端子焊盘102之间连接部件14的桥接而导致的短路。
如上所述，在图2-(a)到2-(c)所示的结构中，设置于支撑板11上的导电区域12A露出用以连接半导体元件100的凸状外部连接端子103的连接区域200。连接区域200的外围被阻焊层13A所覆盖。
用以覆盖导电层12A的阻焊层13A(其中半导体元件100的凸状外部连接端子103A和103B在支撑板11的主表面上连接到该导电层12A)不限于上述构造。
图3示出了阻焊层13A覆盖构造的一个变化例。图3-(a)到图3-(c)所示导电层12A的构造对应于图2-(a)到图2-(c)所示导电层12A的构造。
在图3所示实例中，相邻的导电层12A在远离连接区域201的位置都被阻焊层13A所覆盖。阻焊层13A并不设置于相邻的连接区域201之间，因此露出支撑板11。
这种阻焊层覆盖实例可应用于相邻导电层12A的间隔狭窄的情况。
图4示出了单个外部连接端子焊盘102上的凸状外部连接端子103A和103B的平面图及剖面图。图4-(b)是沿图4-(a)XX′线的剖面图。
图4中，标号101代表硅(Si)衬底，标号104代表氮化硅(Si3N4)制成的表面保护层。图4中，未示出硅(Si)半导体衬底101主表面上的其它导电层或绝缘层。
参见图4，金(Au)球被压力固定并连接到半导体元件100的主表面上的外部连接端子焊盘102，由此制成凸状外部连接端子103A和103B的基座部分301。另外，一体形成从基座部分301突出的部分302，由此制成凸状外部连接端子103。从基座部分301突出的部分302通过形成一部分金(Au)球而制成，该金球的形状与图4未示出的接合工具头端部分的形状相对应。必要时，对从基座部分301突出的部分302进行平坦化处理。但是在本实例中，省略该平坦化处理。
优选地，凸状外部连接端子103A和103B的位置尽可能彼此靠近。同时凸状外部连接端子103A和103B的位置受接合工具头端部分形状的限制，凸状外部连接端子103A和103B之间的空间通过设置凸状外部连接端子103A的基座部分301A和凸状外部连接端子103B的基座部分301B而减少。因此，连接部件14的流入可容易地完成，从而不会在凸状外部连接端子103A和103B之间形成未填充连接部件14的区域，即空隙。
由于连接部件14中不形成无填充区域，当底部填充部件15设置在半导体元件100和支撑板11之间的空间中时，可防止在凸状外部连接端子103A和103B之间形成未填充底部填充部件15的区域。这种结构可防止由于底部填充部件15中的空隙导致的半导体器件的可靠性降低。
图5示出了第一实施例半导体器件的制造工序。
图5-(a)示出了安装并固定于接合台401上的支撑板11面对由吸附夹具(suction jig)402吸持的半导体元件100的状态。
支撑板11主表面上的导电层12A预先被例如由主要成分为锡(Sn)的焊料构成的连接部件14选择性覆盖。
可通过印刷方法、电镀方法、蒸镀和回流方法等形成连接部件14。连接部件14的厚度约为5μm到70μm。而导电层12A由厚度约为9μm到25μm的铜(Cu)形成，导电层12A的材料也可从其它材料中适当选择。
阻焊层13A的厚度约为5μm到25μm。
如上所述，由于支撑板11上的外部连接端子的结构可由多种结构中选取，因此在本实例中省略支撑板11另一主表面上的导电层及其它组件的图示。
另一方面，在半导体元件100中，凸状外部连接端子103A和103B设置于外部连接端子焊盘102上，其中外部连接端子焊盘102未被绝缘层104覆盖，绝缘层104包括在硅(Si)半导体衬底101的主表面上制成的多层布线层。
外部连接端子焊盘102由铝(Al)制成，厚度约为0.4μm到1.5μm。
另外，金(Au)球被压力固定并连接于半导体元件100的主表面上的外部连接端子焊盘102，由此制成凸状外部连接端子103A和103B的基座部分301(参见图4)。另外，一体形成从基座部分301突出的部分302，由此形成凸状外部连接端子103。
基座部分301的直径约为30μm到60μm，厚度约为5μm到25μm。另外，从基座部分301突出的部分302的直径约为10μm到50μm，厚度约为10μm到70μm。
这些尺寸基于半导体元件的有关设计规则，根据端子焊盘的面积、相邻端子焊盘的间隙、半导体器件所需的高度等而适当选择。
除丝球焊方法外，电解电镀方法或非电解电镀方法可应用于在外部连接端子焊盘102的表面上形成凸状外部连接端子103A和103B。例如可采用电镀方法以在外部连接端子焊盘102的表面上形成凸状外部连接端子103A和103B，在该电镀方法中将金属(如金(Au)、铜(Cu)或镍(Ni))沉积在外部连接端子焊盘102的表面上。
优选地，通过电解方法、蒸镀方法等在外部连接端子焊盘102的露出表面(最上层)上形成金(Au)层。
如上所述，在导电层12A和凸状外部连接端子103A和103B处于相互面对的状态下，将接合台401加热至高于连接部件14熔点的温度。另外，降低吸附夹具402使凸状外部连接端子103A和103B压入熔融的连接部件14。
因此，连接部件14覆盖凸状外部连接端子103A和103B并与外部连接端子焊盘102的露出表面接触，使得导电层12A和外部连接端子焊盘102连接。此时，凸状外部连接端子103A和103B之间的空间被连接部件14所填充。图5-(b)示出了这种状态。
代替加热接合台401，可通过预先加热到指定温度(例如约280℃到300℃)的吸附夹具吸持半导体元件100，使得加热后的凸状外部连接端子103A和103B与连接部件14接触，从而导致连接部件14的温度升高而使其熔融。
另外，也可将接合台401预先加热至一指定温度，如约为50℃到100℃，预热支撑板11，从而使连接部件14的温度可在短时间内升高。
因此，半导体元件100的凸状外部连接端子103A和103B连接并固定于支撑板11上的导电层12A，从而将半导体元件100安装于支撑板11上。此后，在支撑板11和半导体元件100之间填充主要成分为环氧基树脂的底部填充部件15。图5-(c)示出了这种状态。
此后，在支撑板11的相同主表面或另一主表面上形成图1所示的外部连接端子16。
【第二实施例】
图6和图7示出了本发明第二实施例的半导体器件。
图7示出其中如图6所示的半导体元件150安装于支撑板11上的半导体器件。图7的半导体元件150以沿图6的Y-Y’线的剖面图示出。
本发明的第二实施例中，以相同的标号表示与本发明第一实施例中所述部件相同的部件，并省略其说明。
参见图6和图7，在本发明第二实施例的半导体器件中，半导体元件150，如DRAM(动态随机存取存储器)，以倒装芯片方式连接于支撑板11上。在半导体元件150的结构中，多个外部连接端子焊盘152设置在半导体衬底151的中央部分并形成一条线。
在本发明第二实施例的半导体器件中，与本发明第一实施例的半导体器件相同，设置于外部连接端子焊盘152上的凸状外部连接端子153A和153B经由连接部件14固定至设置于支撑板11主表面上的导电层12A，其中连接部件14同时覆盖凸状外部连接端子153A和153B。
在本实施例的半导体器件中，多个外部连接端子焊盘152以一条线的状态设置于半导体元件150的半导体衬底151的基本中央位置。
因而，在该半导体器件的制造工序中或在该半导体器件本身中，由于半导体元件150和支撑板11之间的热膨胀系数差异而产生的应力可能集中于连接部件14上，该连接部件14位于设置在半导体衬底151基本中央位置的凸状外部连接端子153A和153B与支撑板11上的导电层12A之间。因此，连接部件14可能产生裂纹并因此导致凸状外部连接端子153A和153B与导电层12A之间的电连接断开。
但是，在本实施例中，两个凸状外部连接端子153A和153B设置于单个外部连接端子焊盘152上，并且经由连接部件14连接并固定至设置于支撑板11主表面上的导电层12A，其中连接部件14同时覆盖着凸状外部连接端子153A和153B。
换而言之，凸状外部连接端子153A和153B沿垂直于外部连接端子焊盘152布局的延伸方向的方向设置于外部连接端子焊盘152上。
因此，利用设置于半导体元件150的凸状外部连接端子153A和153B与支撑板11上的导电层12A之间的连接部件14，连接端子153A和153B与导电层12A之间的接触面积增加。所以，即使由半导体元件150和支撑板11之间热膨胀系数差异而导致的应力集中在位于凸状外部连接端子153A和153B与支撑板11上的导电层12A之间的连接部件14上，该应力也能够在较宽的范围内分散。
所以，在位于凸状外部连接端子153A和153B与支撑板11上的导电层12A之间的连接部件14整个区域中产生裂纹的可能性大幅降低。因此，在本实施例中，可实现半导体元件150和支撑板11之间的高可靠性的电连接和机械连接。
图2或图3所示的结构可应用为本实施例的导电层12A的结构。另外，图4所示的结构可应用为本实施例的凸状外部连接端子153A和153B的结构。
而且，如图5所示的工序可应用为本实施例的安装半导体元件150于支撑板11上的工序。
【第三实施例】
图8示出了本发明第三实施例的半导体器件。此处，图8为本发明第三实施例的半导体器件的剖面图。
在本发明的第三实施例中，以相同的标号表示与本发明第一实施例中所述部件相同的部件，并省略其说明。
参见图8，本发明第三实施例的半导体器件具有叠层(stacked)半导体元件结构，其中在第一实施例半导体器件的半导体元件100(在本实施例中，此后称为“第一半导体元件100”)的后表面上安装第二半导体元件160，第二半导体元件160的具有外部连接端子焊盘161的表面朝上，第一半导体元件100以倒装芯片的方式连接在支撑板11上。
第二半导体元件160经由粘合剂164固定于第一半导体元件100的后表面上。
环氧树脂、聚酰亚胺或类似物的膜状或浆状树脂粘合剂可用作粘合剂164。但是粘合剂164并非仅限于此。
设置于第二半导体元件160上表面上的外部连接端子焊盘161以及支撑板11的第二半导体元件导电层162(本实施例中，此后称第一实施例的导电层12A为“第一半导体元件导电层12A”)通过接合线165相互连接。
第一半导体元件100和第二半导体元件160通过密封树脂166密封在支撑板11上。硅(Si)基树脂，丙烯酸基树脂，环氧基树脂或类似物可被用作密封树脂166。但是密封树脂166并非仅限于此。
因此，本实施例的半导体器件具有叠层结构，其中第二半导体元件160安装于第一半导体元件100上，第一半导体元件100安装于支撑板11上。
在该半导体器件中，第一半导体元件100以倒装芯片方式连接在支撑板11上，然后第二半导体元件160连接并固定于第一半导体元件100上。第二半导体元件160的外部连接端子焊盘161和支撑板11上的第二半导体元件导电层162通过引线接合连接。
接着，支撑板11、第一半导体元件100以及第二半导体元件160被密封树脂166密封。此后，在支撑板11的另一主表面上形成外部连接端子16。
所以，在本实施例中，两个凸状外部连接端子103A和103B设置于第一半导体元件100的单个外部连接端子焊盘102上，并且经由连接部件14连接并固定在设置于支撑板11主表面上的导电层12A，其中连接部件14同时覆盖凸状外部连接端子103A和103B。
因而，设置于第一半导体元件100的凸状外部连接端子103A和103B与支撑板11上的导电层12A之间的接触面积增加。
两个凸状外部连接端子103A和103B沿垂直于第一半导体元件100边缘部分延伸方向的方向设置。
所以，即使由第一半导体元件100和支撑板11之间产生的热应力或机械应力差异、或者其热膨胀系数差异而导致的应力在制造工序中集中在连接部件14(该连接部件14位于设置于第一半导体元件100的半导体衬底101上的凸状外部连接端子103A和103B与支撑板11上的导电层12A之间)上，该应力也能够在较宽的范围内分散。
所以，在位于第一半导体元件100的凸状外部连接端子103A和103B与支撑板11上的导电层12A之间的连接部件14的整个区域中产生裂纹的可能性大幅降低。因此，在本实施例中，可实现第一半导体元件100和支撑板11之间的高可靠性的电连接和机械连接。
图2或图3所示的结构可应用为本实施例的导电层12A的结构。另外，图4所示的结构可用于本实施例的凸状外部连接端子103A和103B的结构。
而且，如图5所示的工序可应用于本实施例的安装半导体元件100于支撑板11上的工序。
【第四实施例】
图9和图10示出了本发明第四实施例的半导体器件。
此处，图9为本发明第四实施例的半导体器件的剖面图。图10为图9虚线围绕部分的放大图。
本发明的第四实施例中，以相同的标号表示与本发明第一到第三实施例中所述部件相同的部件，并省略其说明。
参见图9，在本实施例的半导体器件中，半导体元件500经由布线板600设置于支撑板11上。
布线板600用作设置为连接支撑板11和半导体元件500的中继板，即引线芯片(terminal chip)。
由铜(Cu)构成的导电层112A选择性设置于支撑板11的主表面上。
导电层112A包括布线层以及接合线265所连接的导电层。接合线265连接至支撑板11和布线板600。除了用以连接接合线265的区域外的导电层112A选择性被阻焊层13A覆盖。换而言之，从导电层112A的连接布线板600的区域中去除阻焊层13A。
另一方面，布线板600由有机绝缘板形成，该有机绝缘板由如玻璃环氧树脂、玻璃双马来酰亚胺改性的三嗪(BT，Bismaleimide-Triazine)、聚酰亚胺等制成。布线板600通过粘合剂164固定在支撑板11上。
对应于半导体元件500的外部连接端子焊盘502，在布线板600的上表面(即安装半导体元件500的表面)上设置由铜(Cu)构成的多个外部连接端子焊盘612A。在每个外部连接端子焊盘612A上设置单个凸状外部连接端子603。
由铜(Cu)构成的多个外部连接端子焊盘612B设置于布线板600的上表面上和半导体元件500的外围。外部连接端子焊盘612B设置于布线板600的主表面四边的附近或布线板600主表面的彼此相对两边的附近。
外部连接端子焊盘612A通过布线层(图中未示出)连接于对应的外部连接端子焊盘612B，其中该布线层形成在布线板600的表面上或内部。
优选地，在焊盘612A和612B的表面上形成电镀层，该电镀层由自下层侧开始的镍(Ni)/金(Au)或铜(Cu)/镍(Ni)/金(Au)构成。
与第一实施例到第三实施例中的半导体元件100一样，由如硅(Si)或砷化镓(GaAs)构成的半导体衬底用于半导体元件500，并由公知的半导体制造工序形成。
设置多个外部连接端子焊盘502于半导体元件500的主表面上。设置单个凸状外部连接端子503于每个外部连接端子焊盘502上。
半导体元件500通过所谓的倒装芯片方法安装于布线板600上。在这种情况下，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503的头端部分与设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603的头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件500表面或者布线板600表面的表面上的位置不同(偏移)。凸状外部连接端子503和603沿垂直于半导体元件500边缘部分的延伸方向的方向设置。
另外，凸状外部连接端子503和603沿垂直于平面的方向(即半导体元件500或布线板600的厚度方向)层叠(相互重叠)。
凸状外部连接端子503和603通过由焊料或导电粘合剂构成的连接部件14机械连接和电连接。底部填充部件15的主要成分为环氧基树脂，其设置于半导体元件500和布线板600之间，以使半导体元件500固定于布线板600上。
布线板600上的外部连接端子焊盘612B与支撑板11上的导电层112A由接合线265连接。
另外，支撑板11和第一半导体元件100由密封树脂166密封。外部连接端子16设置于支撑板11的另一主表面上。
在此结构下，由如玻璃或陶瓷构成的无机绝缘衬底，或由如硅(Si)或砷化镓(GaAs)构成的半导体衬底可用作布线板600。
在半导体衬底用作布线板600的情况下，可应用与制造半导体元件的晶片处理同样的处理，由此外部连接端子焊盘612可由铝(Al)、铜(Cu)或铝铜合金(如铝95％-铜5％合金)等构成。
在布线板600与设置在布线板600上的半导体元件500采用同一材料，即由硅(Si)形成的情况下，布线板600和半导体元件500的热膨胀系数基本相同。所以，连接部件14中的应力能够降低，该连接部件14位于半导体元件500的外部连接端子焊盘502与布线板600的外部连接端子焊盘612A之间。
因此，能够实现半导体元件500和布线板600之间高可靠性的机械连接和电连接。
通过采用晶片处理，能够使外部连接端子焊盘502和612A之间的间距更微细；因此使得半导体器件尺寸小且集成度高。另外，半导体元件500的外部连接端子焊盘502的数量可以容易地提高，以符合半导体器件的高性能和大位数的需求。
在半导体衬底用作布线板600的情况下，在布线板600上可形成半导体集成电路。
通过在布线板600上形成半导体集成电路，能够形成叠层芯片(COC，Chip-On-Chip)型半导体器件，其中在三维空间中安装多个半导体元件并封装，因此能够缩小安装面积。
另外，如果必要的话，布线板600可应用多层布线结构。此外，无源元件，如电感器、电容元件或电阻元件等，可安装或形成在布线板600的表面上或内层布线部分上。
如上所述，在本实施例中，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503头端部分与设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件500表面或者布线板600表面的表面上的位置偏移。凸状外部连接端子503和603沿垂直于平面的方向层叠设置(相互重叠)。凸状外部连接端子503和603通过连接部件14机械连接和电连接并彼此固定。
图10-(a)的放大图示出了上述凸状外部连接端子503和603的相互连接结构。
凸状外部连接端子503在外部连接端子焊盘502上的位置与凸状外部连接端子603在外部连接端子焊盘612A上的位置在平行于半导体元件500表面或布线板600表面的平面上相互偏移。这些位置在图9所示的水平方向(即半导体元件500或布线板600的宽度方向)上相互偏移，。
另外，凸状外部连接端子503和603在垂直于平面的方向上的层叠(相互重叠)量与测量值A相对应，该方向是半导体元件500或布线板600的厚度方向。
在此连接和固定结构下，凸状外部连接端子503和603在水平方向上的位置相互不同，而且凸状外部连接端子503和603的头端部分分别定位于不同的平面内。
所以，即使在凸状外部连接端子503头端部分与连接部件14的界面中以及凸状外部连接端子603头端部分与连接部件14的界面中产生由于热或机械应力而导致的裂纹，在一个凸状外部连接端子的头端部分处的裂纹也不会扩展(不会连接)到另一凸状外部连接端子的头端部分处的裂纹，所以不会产生连续裂纹。
因此，不会发生如下情况：在覆盖外部连接端子503和603外围的连接部件14的整个区域产生裂纹，以及因为裂纹的产生而导致连接部件14的断裂。由此，能够保持外部连接端子503和603之间的稳固的固定和连接关系。
换而言之，根据本实施例中的凸状外部连接端子的结构，其中由于应力集中而导致在连接部件14中产生裂纹的部分被分散。所以，能够实现半导体元件500与布线板600之间的电连接和机械连接。
如上所述，半导体衬底1、布线板600和半导体元件500由密封树脂166树脂密封。
所以，基于在半导体器件制造工序中施加的机械和/或热应力或半导体元件500、布线板600和支撑板11之间的热膨胀系数差，应力有可能集中于连接部件14上。
但是，在本实施例中，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503头端部分与设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件500表面或者布线板600表面的表面上的位置不同(偏移)。凸状外部连接端子503和603沿垂直于平面的方向层叠(相互重叠)。凸状外部连接端子503和603通过连接部件14机械连接和电连接并彼此固定。
根据上述结构，其中应力集中从而可能导致裂纹的部分被分散。所以，能够实现半导体元件500与布线板600之间的电连接和机械连接。
如图10-(b)所示，如果设置于外部连接端子焊盘502上的凸状外部连接端子503头端部分和设置于外部连接端子焊盘612A上的凸状外部连接端子603头端部分在同一平面中定位于沿半导体元件500厚度方向(图10中的垂直方向)的相同位置，则有可能发生以下问题。
即，在凸状外部连接端子503和连接部件14的界面以及凸状外部连接端子603和连接部件14的界面产生由于热或机械应力导致的裂纹的情况下，一个凸状外部连接端子的头端部分处的裂纹可能容易扩展(连接)到另一凸状外部连接端子的头端部分处的裂纹，从而可能产生连续的裂纹。这最终将导致连接部件14的断裂。
在如图9和图10-(a)所示的结构中，凸状外部连接端子设置于半导体元件和支撑板的电极焊盘上，而且选择所述凸状外部连接端子的位置和高度以使半导体元件和支撑板的电极焊盘由多个凸状外部连接端子连接。该结构可适用于本发明第一到第三实施例中的半导体元件的安装结构。
在图11所示实例中，凸状外部连接端子分别设置于半导体元件和支撑板的电极焊盘上，其中所述凸状外部连接端子在位置和高度上都有偏移和重叠。该实例适用于第一实施例的半导体器件。
参见图11，凸状外部连接端子19设置于支撑板11的导电层12A上。凸状外部连接端子119设置于半导体元件100的外部连接端子焊盘102上。
换而言之，设置于半导体元件100的外部连接端子焊盘102上的凸状外部连接端子19头端部分与设置于支撑板11的导电层12A上的凸状外部连接端子119头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件100表面或者支撑板11表面的表面上的位置不同(偏移)。凸状外部连接端子19和119沿垂直于平面的方向层叠(相互重叠)。凸状外部连接端子19和119通过连接部件14机械连接和电连接并彼此固定。
凸状外部连接端子19和119沿垂直于半导体元件100边缘部分的延伸方向的方向设置。
根据本实施例的结构，其中由于应力集中而可能导致连接部件14中产生裂纹的部分被分散。所以，能够实现半导体元件100与支撑板11之间的可靠的电连接和机械连接。
参照图12说明本发明第四实施例的半导体器件制造工序的主要部分。
图12-(a)示出了安装并固定于接合台401上的布线板600和由吸附夹具402吸持的半导体元件500互相面对的状态。
凸状外部连接端子503形成于半导体元件500的外部连接端子焊盘502上。凸状外部连接端子603形成于布线板600的外部连接端子焊盘612A上。
外部连接端子焊盘502和612A的外围被表面保护层104所覆盖，该表面保护层104由氮化硅(Si3N4)构成。
如图12所示，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503头端部分与设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件500表面或者布线板600表面的表面上的位置偏移。
在安装并固定于接合台401上的布线板600与由吸附夹具402吸持的半导体元件500相互面对之前，在半导体元件500的凸状外部连接端子503和布线板600的凸状外部连接端子603中的至少之一上预先形成连接部件14。
在图12所示的实例中，连接部件14形成于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503头端部分上。但是，本发明并非仅限此实例。连接部件14可形成于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603头端部分上。另外，可在凸状外部连接端子503和603上都形成连接部件14。
通过在凸状外部连接端子503和603上都形成连接部件14，能够在外部连接端子焊盘502和612A之间均匀地设置连接部件14。
在连接部件14由导电树脂(如具有银填料的热固导电环氧树脂浆料)构成的情况下，可通过在凸状外部连接端子503和603上都形成连接部件14而均匀设置连接部件14。然后，在半导体元件500与布线板600互相面对的状态下，将接合台401加热至等于或高于连接部件14熔点的温度(如约280℃到300℃)，并降低吸附夹具402以使得凸状外部连接端子503和603被压入熔融的连接部件14。
此时，吸附夹具402也被加热至指定温度，如约80℃到200℃。
因此，连接部件14覆盖凸状外部连接端子503和603，并与外部连接端子焊盘502和612A的露出表面接触，使外部连接端子焊盘502和612A连接。此时，凸状外部连接端子503和603之间的空间被连接部件14所填充。
另外，此时，凸状外部连接端子503和603在垂直于平面的方向上层叠(相互重叠)量与如图10-(a)所示的测量值A相对应，该方向是半导体元件500或布线板600的厚度方向。该状态如图12-(b)所示。
所以，外部连接端子焊盘502和凸状外部连接端子603，以及外部连接端子焊盘612A和凸状外部连接端子503，通过连接部件14相互连接并固定，从而使得半导体元件500安装于布线板600上。此后，在布线板600和半导体元件500之间设置主要成分为环氧基树脂的底部填充部件15。该状态如图12-(c)所示。
然后，将布线板600安装于支撑板11上，并通过接合线265连接布线板600上的端子焊盘612B与支撑板11上的导电层112A。
接着，通过密封树脂166密封支撑板11、布线板600和半导体元件500。
此后，在支撑板11的另一主表面上设置外部连接端子16以形成如图9所示的半导体器件。
【第五实施例】
图13和图14示出了本发明第五实施例的半导体器件。
此处，图13为本发明第五实施例的半导体器件的剖面图。图14为图13虚线围绕部分的放大图。
本发明的第五实施例中，以相同的标号表示与本发明第一到第四实施例中所述部件相同的部件，并省略其说明。
参见图13和图14，在第五实施例的半导体器件中，单个凸状外部连接端子503设置于半导体元件500的外部连接端子焊盘502的基本中央部分。
另一方面，两个凸状外部连接端子603-1和603-2以指定间隔B设置于布线板600的外部连接端子焊盘612A上。参见图14。
凸状外部连接端子603-1和603-2之间的间隔B略大于设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503的厚度C。参见图14。
由于凸状外部连接端子的这种设置，当半导体元件500以倒装芯片方式连接并固定于布线板600上时，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503容纳在布线板600的外部连接端子焊盘612A上的凸状外部连接端子603-1和603-2之间的位置，同时凸状外部连接端子503的头端部分并不面对凸状外部连接端子603-1和603-2。
凸状外部连接端子503、603-1和603-2沿垂直于半导体元件500边缘部分的延伸方向的方向而设置。
另外，凸状外部连接端子503、603-1和603-2在垂直于平面的方向上的层叠(相互重叠)量与测量值A相对应，该方向是半导体元件500或布线板600的厚度方向。参见图14。
根据此连接和固定结构，凸状外部连接端子603-1和603-2分别定位于凸状外部连接端子503两侧。因此，较之于上述实施例，与连接部件14的接触面积增大了。所以，能够加强半导体元件500和布线板600之间的连接和固定强度。
另外，根据此连接和固定结构，凸状外部连接端子503、603-1和603-2在水平方向上的位置相互不同，而且凸状外部连接端子503、603-1和603-2的头端部分分别位于不同的平面内。
因而，即使在凸状外部连接端子503的头端部分与连接部件14的界面中以及凸状外部连接端子603-1和603-2的头端部分与连接部件14的界面中产生由于热或机械应力而导致的裂纹，在一个凸状外部连接端子的头端部分处的裂纹也不会扩展(连接)到其它凸状外部连接端子的头端部分处的裂纹。换而言之，由于三个凸状外部连接端子位于水平方向上的不同位置，并且所述凸状外部连接端子的头端部分位于不同平面内，所以在头端部分处的裂纹不会继续扩展。
因此，不会发生如下情况：在覆盖外部连接端子503和603外围的连接部件14的整个区域产生裂纹，以及因为裂纹的产生而导致连接部件14的断裂。所以，能够保持外部端子503和603之间稳固的固定和连接关系。
如图13和图14所示的本实施例中，单个凸状外部连接端子503设置于半导体元件500的外部连接端子焊盘502上，并且两个凸状外部连接端子603-1和603-2设置于布线板600的外部连接端子焊盘612A上。但是，本发明并非仅限于本实例。
多个凸状外部连接端子503可设置于半导体元件500的外部连接端子焊盘502上，并且单个凸状外部连接端子603可设置于布线板600的外部连接端子焊盘612A上。或者，多个凸状外部连接端子503可设置于半导体元件500的外部连接端子焊盘502上，并且多个凸状外部连接端子603可设置于布线板600的外部连接端子焊盘612A上。
在任一结构中，都要求凸状外部连接端子503和603在水平方向上的位置相互不同，而且凸状外部连接端子503和603的头端部分分别位于不同的平面内。
接下来，参照图15说明本发明第五实施例的半导体器件制造工序的主要部分。
图15-(a)示出了安装并固定于接合台401的布线板600与由吸附夹具402吸附的半导体元件500相互面对的状态。
凸状外部连接端子503形成于半导体元件500的外部连接端子焊盘502上。凸状外部连接端子603-1和603-2形成于布线板600的外部连接端子焊盘612A上。
外部连接端子焊盘502和612A的外围被表面保护层104所覆盖，该表面保护层104由氮化硅(Si3N4)构成。
如图15所示，设置于半导体元件500的外部连接端子焊盘502上的凸状外部连接端子503头端部分与设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603-1和603-2头端部分并不相互面对。换而言之，所述各头端部分在平行于半导体元件500表面或者布线板600表面的表面上的位置不同。半导体元件500的外部连接端子焊盘502上设置的凸状外部连接端子503设置于布线板600的外部连接端子焊盘612A上的凸状外部连接端子603-1和603-2之间。
在安装并固定于接合台401上的布线板600与由吸附夹具402吸持的半导体元件500相互面对之前，在半导体元件500的凸状外部连接端子503和布线板600的凸状外部连接端子603中的至少之一上预先形成连接部件14。在图15所示的实例中，连接部件14形成于半导体元件500的外部连接端子焊盘502上设置的凸状外部连接端子503的头端上。
然后，在半导体元件500与布线板600互相面对的情况下，将接合台401加热至等于或高于连接部件14熔点的温度(如约280℃到300℃)，并降低吸附夹具402以使得凸状外部连接端子503和603被压入熔融的连接部件14。
此时，吸附夹具402也被加热至指定温度，如约80℃到200℃。
因此，连接部件14覆盖凸状外部连接端子503、603-1和603-2，并与外部连接端子焊盘502和612A的露出表面接触，使外部连接端子焊盘502和612A连接。此时，凸状外部连接端子503、603-1和603-2间的空间被连接部件14所填充。
另外，此时，凸状外部连接端子503和603在垂直于平面的方向上的层叠(相互重叠)量与测量值A相对应，该方向是半导体元件500或布线板600的厚度方向。该状态如图15-(b)所示。
所以，外部连接端子焊盘502和凸状外部连接端子603，以及外部连接端子焊盘612A和凸状外部连接端子503，通过连接部件14相互连接并固定，从而使得半导体元件500安装于布线板600上。此后，在布线板600和半导体元件500之间设置主要成分为环氧基树脂的底部填充部件15。该状态如图15-(c)所示
然后，将布线板600安装于支撑板11上，并通过接合线265连接布线板600上的端子焊盘612B与布线板11上的导电层112A。
接着，通过密封树脂166密封支撑板11、布线板600和半导体元件500。
此后，在支撑板11的另一主表面上设置外部连接端子16以形成如图13所示的半导体器件。
本发明并非仅限于所述实施例，而可作各种的变化与修改，但均不脱离本发明的范围。
设置于半导体元件的外部连接端子焊盘上的凸状外部连接端子可由金(Au)、铜(Cu)、镍(Ni)或上述金属的合金等形成。例如，使用金属线通过丝球焊方法形成的球状凸点或通过电镀方法制备的凸点可应用于凸状外部连接端子。
另外，在布线板是由有机绝缘材料(如玻璃环氧树脂、玻璃双马来酰亚胺改性的三嗪(BT)、聚酰亚胺等)制成或由无机绝缘材料(如陶瓷或玻璃)制成的情况下，外部连接端子焊盘可由铜(Cu)制成，该铜的表面具有自下层侧开始的镍(Ni)/金(Au)双电镀层或者自下层侧开始的铜(Cu)/镍(Ni)/金(Au)三电镀层。凸状外部连接端子可通过丝球焊方法在外部连接端子焊盘上制成，其中该丝球焊的方法使用由金(Au)、铜(Cu)、镍(Ni)或上述金属的合金等制成的金属线。
或者，由银(Ag)等材料构成的凸状外部连接端子可在由铜(Cu)等材料构成的外部连接端子焊盘上通过印刷方法、转印方法或喷墨印刷方法等制成。然后，自下层侧开始的镍(Ni)/金(Au)双电镀层，或者自下层侧开始的铜(Cu)/镍(Ni)/金(Au)三电镀层可在外部连接端子焊盘及凸状外部连接端子的整个区域上形成。
另外，可对由铜(Cu)制成的外部连接端子焊盘应用蚀刻处理以局部形成凸状外部连接端子。然后可形成自下层侧开始的镍(Ni)/金(Au)双电镀层，或者自下层侧开始的铜(Cu)/镍(Ni)/金(Au)三电镀层。
或者，可对由铜(Cu)制成的外部连接端子焊盘局部应用铜电镀，以形成凸状外部连接端子。然后可形成自下层侧开始的镍(Ni)/金(Au)双电镀层，或者自下层侧开始的铜(Cu)/镍(Ni)/金(Au)三电镀层。
另一方面，当布线板由硅(Si)或砷化镓(GaAs)构成时，外部连接端子焊盘可由铝(Al)、铜(Cu)或其合金等材料制成，而且可在外部连接端子焊盘上形成金属膜，其中该金属膜由自下层侧开始的镍(Ni)/金(Au)/钛(Ti)/钨(W)/金(Au)、钛(Ti)/钯(Pd)/金(Au)、或者钛(Ti)/镍(Ni)/钯(Pd)/金(Au)构成。凸状外部连接端子可通过丝球焊方法形成于该金属膜上，其中该丝球焊方法使用由金(Au)、铜(Cu)、镍(Ni)或其合金等构成的金属线。
或者，依次自下层侧开始由钛(Ti)/钨(W)、钛(Ti)/钨(W)/金(Au)、钛(Ti)/钯(Pd)、钛(Ti)/钯(Pd)/金(Au)、钛(Ti)/镍(Ni)/钯(Pd)或类似物构成的金属膜可在由铝(Al)、铜(Cu)或其合金等构成的外部连接端子焊盘上制成。由金(Au)或铜(Cu)等材料构成的凸状外部连接端子可通过电解电镀方法在金属膜上制成。
另外，优选地，通过电解电镀方法或蒸镀方法等形成金(Au)层作为最上层，即一部分外部连接端子焊盘的表面，在该表面中至少未形成凸状外部连接端子。
由于存在该金(Au)层，在焊料被用作连接部件的情况下，能够保证焊料在最上层(即外部连接端子焊盘的表面)上湿扩散。
另外，在球状凸点被用作凸状外部连接端子的情况下，预先在最上层上，即一部分外部连接端子焊盘的表面上，形成金(Au)层，其中在该表面上形成凸状外部连接端子，从而可容易地形成使用金(Au)线的球状凸点。
当形成上述基础金(Au)层时，优选在该金(Au)层和凸状外部连接端子的表面(最上层)之间形成由钛(Ti)、钨(W)、钯(Pd)、镍(Ni)、上述材料的合金或类似材料构成的金属层作为下层。通过该金属层能够防止外部连接端子焊盘的腐蚀，从而提高层间粘合力。
具体的，优选在金(Au)层和凸状外部连接端子的表面(最上层)之间自外部连接端子焊盘侧开始设置镍(Ni)、钛(Ti)/钨(W)、钛(Ti/钯(Pd)、或钛(Ti)/镍(Ni)/钯(Pd)。
另外，作为连接部件，可使用由锡(Sn)-银(Ag)、锡(Sn)-银(Ag)-铜(Cu)、锡(Sn)-银(Ag)-铟(In)构成的焊料或诸如环氧树脂的导电树脂，其中该导电树脂包括银(Ag)、铜(Cu)、铜(Cu)合金或类似材料的金属颗粒，或者包括其中形成上述金属的金属膜的颗粒。
可通过如下方法形成上述连接部件：外部连接端子焊盘的表面上的选择性电解电镀方法；转印方法，其中使凸状外部连接端子的头端部分与连接部件层接触，从而使该连接部件附着于该头端部分，其中该连接部件层具有均匀的厚度并涂覆于另一衬底上；或者从一微型喷嘴中喷射浆料或微细颗粒状态的连接部件以使该连接部件部分地附着于凸状外部连接端子的头端部分的方法。
本专利申请基于并要求2005年6月28日申请的日本专利申请No.2005-188887和2006年3月7日申请的日本专利申请No.2006-61759的优先权，在此通过参考援引其全部内容。

Claims (14)

1.一种半导体器件，包括：
半导体元件，其主表面上设置有外部连接端子焊盘，
其中，该半导体元件经由多个凸状外部连接端子和一个连接部件连接到支撑板上的导电层，所述多个凸状外部连接端子设置于该外部连接端子焊盘上；以及
该连接部件同时覆盖所述多个凸状外部连接端子。
2.如权利要求1所述的半导体器件，
其特征在于，该半导体元件用作第一半导体元件，以及
所述第一半导体元件上附着并固定有第二半导体元件。
3.如权利要求2所述的半导体器件，
其特征在于，所述第一半导体元件、第二半导体元件和支撑板由密封树脂密封。
4.一种半导体器件，包括：
半导体元件；以及
支撑板，
在该半导体元件中，多个外部连接端子焊盘设置于半导体衬底的主表面上，并且至少一个第一凸状外部连接端子设置于所述外部连接端子焊盘上，
在该支撑板中，设置有与所述外部连接端子焊盘相对应的多个导电层，并且至少一个第二凸状外部连接端子设置于所述导电层上，
其中，所述第一凸状外部连接端子经由连接部件连接到所述导电层；
所述第二凸状外部连接端子经由该连接部件连接到所述外部连接端子焊盘。
5.如权利要求4所述的半导体器件，
其特征在于，所述外部连接端子焊盘上的第一凸状外部连接端子位置与所述导电层上的第二凸状外部连接端子位置在该半导体器件的宽度方向上偏移；以及
所述第一凸状外部连接端子的头端表面位置与所述第二凸状外部连接端子的头端表面位置在该半导体器件厚度方向上重叠。
6.如权利要求5所述的半导体器件，
其特征在于，所述第一凸状外部连接端子和所述第二凸状外部连接端子中的至少之一的数量为多个，以及
所述第二凸状外部连接端子设置于相邻的所述第一凸状外部连接端子之间，或者所述第一凸状外部连接端子设置于相邻的所述第二凸状外部连接端子之间。
7.如权利要求4所述的半导体器件，
其特征在于，所述多个外部连接端子焊盘设置于所述半导体衬底的基本中央，并形成一条线。
8.一种半导体器件，包括：
支撑板；以及
半导体元件，其安装于布线板上，该布线板安装于该支撑板上，该半导体元件经由该布线板连接到该支撑板，
其中，多个半导体元件外部连接端子焊盘设置于该半导体元件的半导体衬底的主表面上，该主表面面对该布线板；
至少一个第一凸状外部连接端子设置于所述半导体元件外部连接端子焊盘上；
多个布线板外部连接端子焊盘设置于该布线板的主表面上，该主表面面对该半导体元件；
至少一个第二凸状外部连接端子设置于所述布线板外部连接端子焊盘上；
所述第一凸状外部连接端子经由连接部件连接到所述布线板外部连接端子焊盘；
所述第二凸状外部连接端子经由该连接部件连接到所述半导体元件外部连接端子焊盘。
9.如权利要求8所述的半导体器件，
其特征在于，所述半导体元件外部连接端子焊盘上的第一凸状外部连接端子位置与所述布线板外部连接端子焊盘上的第二凸状外部连接端子位置在该半导体器件的宽度方向上偏移；以及
所述第一凸状外部连接端子的头端表面位置与所述第二凸状外部连接端子的头端表面位置在该半导体器件的厚度方向上重叠。
10.如权利要求9所述的半导体器件，
其特征在于，所述第一凸状外部连接端子和所述第二凸状外部连接端子中的至少之一的数量为多个，以及
所述第二凸状外部连接端子设置于相邻的所述第一凸状外部连接端子之间，或者所述第一凸状外部连接端子设置于相邻的所述第二凸状外部连接端子之间。
11.如权利要求8所述的半导体器件，
其特征在于，该布线板由选自由有机材料、陶瓷和玻璃构成的集合中的材料制成。
12.如权利要求8所述的半导体器件，
其特征在于，该布线板由硅制成。
13.如权利要求12所述的半导体器件，
其特征在于，该布线板上形成有半导体集成电路。
14.如权利要求8所述的半导体器件，
其特征在于，该半导体元件、布线板和支撑板由密封树脂密封。
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