CN102300396B - 配线基板 - Google Patents
配线基板 Download PDFInfo
- Publication number
- CN102300396B CN102300396B CN201110169981.9A CN201110169981A CN102300396B CN 102300396 B CN102300396 B CN 102300396B CN 201110169981 A CN201110169981 A CN 201110169981A CN 102300396 B CN102300396 B CN 102300396B
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- wiring
- layer
- insulating layers
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010143862A JP5578962B2 (ja) | 2010-06-24 | 2010-06-24 | 配線基板 |
| JP2010-143862 | 2010-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102300396A CN102300396A (zh) | 2011-12-28 |
| CN102300396B true CN102300396B (zh) | 2016-08-24 |
Family
ID=45351753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110169981.9A Active CN102300396B (zh) | 2010-06-24 | 2011-06-23 | 配线基板 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8450852B2 (enExample) |
| JP (1) | JP5578962B2 (enExample) |
| CN (1) | CN102300396B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8952540B2 (en) | 2011-06-30 | 2015-02-10 | Intel Corporation | In situ-built pin-grid arrays for coreless substrates, and methods of making same |
| EP2763513B1 (en) * | 2011-09-30 | 2016-09-14 | Kyocera Corporation | Wiring substrate, component embedded substrate, and package structure |
| US9159649B2 (en) * | 2011-12-20 | 2015-10-13 | Intel Corporation | Microelectronic package and stacked microelectronic assembly and computing system containing same |
| JP5990421B2 (ja) * | 2012-07-20 | 2016-09-14 | 新光電気工業株式会社 | 配線基板及びその製造方法、半導体パッケージ |
| JP2015038911A (ja) * | 2012-09-27 | 2015-02-26 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| US9997491B2 (en) | 2013-07-08 | 2018-06-12 | Sony Corporation | Method of determining curing conditions, method of producing circuit device, and circuit device |
| JP6323011B2 (ja) * | 2014-01-08 | 2018-05-16 | 株式会社デンソー | 多層基板 |
| JP6208054B2 (ja) * | 2014-03-10 | 2017-10-04 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
| US9941219B2 (en) * | 2014-09-19 | 2018-04-10 | Intel Corporation | Control of warpage using ABF GC cavity for embedded die package |
| WO2016117123A1 (ja) * | 2015-01-23 | 2016-07-28 | オリンパス株式会社 | 撮像装置、および内視鏡 |
| US9961767B2 (en) * | 2015-02-10 | 2018-05-01 | Shinko Electric Industires Co., Ltd. | Circuit board and method of manufacturing circuit board |
| JP6444269B2 (ja) * | 2015-06-19 | 2018-12-26 | 新光電気工業株式会社 | 電子部品装置及びその製造方法 |
| US9997428B2 (en) | 2015-07-14 | 2018-06-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Via structures for thermal dissipation |
| US10129972B2 (en) | 2015-10-30 | 2018-11-13 | Avago Technologies International Sales Pte. Limited | Frame elements for package structures comprising printed circuit boards (PCBs) |
| JP6812678B2 (ja) * | 2016-06-29 | 2021-01-13 | 昭和電工マテリアルズ株式会社 | 配線板の製造方法 |
| JP7252871B2 (ja) * | 2019-09-26 | 2023-04-05 | 京セラ株式会社 | 基体構造体及び基体構造体を用いた電子デバイス |
| JP7229135B2 (ja) * | 2019-09-26 | 2023-02-27 | 京セラ株式会社 | 電子デバイス |
| JP7566652B2 (ja) | 2021-02-02 | 2024-10-15 | キオクシア株式会社 | 半導体装置および基板 |
| US20230317592A1 (en) * | 2022-04-01 | 2023-10-05 | Intel Corporation | Substrate with low-permittivity core and buildup layers |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540311A (zh) * | 2008-03-19 | 2009-09-23 | 新光电气工业株式会社 | 多层配线基板以及制造多层配线基板的方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04322451A (ja) * | 1991-04-23 | 1992-11-12 | Hitachi Ltd | 半導体装置 |
| US6143116A (en) * | 1996-09-26 | 2000-11-07 | Kyocera Corporation | Process for producing a multi-layer wiring board |
| JP2000244127A (ja) * | 1998-12-24 | 2000-09-08 | Ngk Spark Plug Co Ltd | 配線基板および配線基板の製造方法 |
| JP2000286362A (ja) * | 1999-03-30 | 2000-10-13 | Mitsubishi Gas Chem Co Inc | 極薄bgaタイプ半導体プラスチックパッケージ用プリント配線板 |
| JP2000294677A (ja) * | 1999-04-05 | 2000-10-20 | Fujitsu Ltd | 高密度薄膜配線基板及びその製造方法 |
| US6413620B1 (en) * | 1999-06-30 | 2002-07-02 | Kyocera Corporation | Ceramic wiring substrate and method of producing the same |
| JP2001102749A (ja) * | 1999-09-17 | 2001-04-13 | Internatl Business Mach Corp <Ibm> | 回路基板 |
| JP2001284809A (ja) * | 2000-04-03 | 2001-10-12 | Ibiden Co Ltd | 多層回路基板および、その製造方法 |
| US6753483B2 (en) * | 2000-06-14 | 2004-06-22 | Matsushita Electric Industrial Co., Ltd. | Printed circuit board and method of manufacturing the same |
| US6518514B2 (en) * | 2000-08-21 | 2003-02-11 | Matsushita Electric Industrial Co., Ltd. | Circuit board and production of the same |
| JP3760101B2 (ja) * | 2001-02-13 | 2006-03-29 | 富士通株式会社 | 多層プリント配線板およびその製造方法 |
| US6740411B2 (en) * | 2001-02-21 | 2004-05-25 | Ngk Spark Plug Co. Ltd. | Embedding resin, wiring substrate using same and process for producing wiring substrate using same |
| JP2002290022A (ja) * | 2001-03-27 | 2002-10-04 | Kyocera Corp | 配線基板およびその製造方法ならびに電子装置 |
| US6759600B2 (en) * | 2001-04-27 | 2004-07-06 | Shinko Electric Industries Co., Ltd. | Multilayer wiring board and method of fabrication thereof |
| US6988312B2 (en) | 2001-10-31 | 2006-01-24 | Shinko Electric Industries Co., Ltd. | Method for producing multilayer circuit board for semiconductor device |
| KR100970105B1 (ko) * | 2001-11-30 | 2010-07-20 | 아지노모토 가부시키가이샤 | 회로 기판의 적층방법 및 절연층의 형성방법, 다층 프린트배선판 및 이의 제조방법 및 다층 프린트 배선판용 접착필름 |
| US6936336B2 (en) * | 2002-03-15 | 2005-08-30 | Kyocera Corporation | Transfer sheet and production method of the same and wiring board and production method of the same |
| JP2004186265A (ja) * | 2002-11-29 | 2004-07-02 | Ngk Spark Plug Co Ltd | 多層配線基板の製造方法 |
| CN100477891C (zh) * | 2003-01-16 | 2009-04-08 | 富士通株式会社 | 多层布线基板及其制造方法、纤维强化树脂基板制造方法 |
| JP2004228521A (ja) * | 2003-01-27 | 2004-08-12 | Ngk Spark Plug Co Ltd | 配線基板およびその製造方法 |
| JP2004140385A (ja) | 2003-11-17 | 2004-05-13 | Kyocera Corp | 多層配線基板 |
| JP2006120943A (ja) * | 2004-10-22 | 2006-05-11 | Shinko Electric Ind Co Ltd | チップ内蔵基板及びその製造方法 |
| JP2006321853A (ja) * | 2005-05-17 | 2006-11-30 | Denso Corp | 樹脂基材及びその製造方法 |
| JP4072176B2 (ja) * | 2005-08-29 | 2008-04-09 | 新光電気工業株式会社 | 多層配線基板の製造方法 |
| CN1925148A (zh) * | 2005-08-29 | 2007-03-07 | 新光电气工业株式会社 | 多层配线基板及其制造方法 |
| JP4806279B2 (ja) * | 2006-03-17 | 2011-11-02 | 三菱樹脂株式会社 | ガラスクロス含有絶縁基材 |
| JP4929784B2 (ja) * | 2006-03-27 | 2012-05-09 | 富士通株式会社 | 多層配線基板、半導体装置およびソルダレジスト |
| JP2007317943A (ja) * | 2006-05-26 | 2007-12-06 | Sumitomo Bakelite Co Ltd | 基板および半導体装置 |
| JP2008028302A (ja) * | 2006-07-25 | 2008-02-07 | Sumitomo Bakelite Co Ltd | 多層回路基板及び該多層回路基板を用いた半導体装置 |
| JP2008041932A (ja) * | 2006-08-07 | 2008-02-21 | Toray Ind Inc | 配線基板の製造方法 |
| JP2008166322A (ja) * | 2006-12-27 | 2008-07-17 | Sumitomo Bakelite Co Ltd | 絶縁樹脂組成物、基材付き絶縁樹脂シート、多層プリント配線板、及び半導体装置 |
| JP5192162B2 (ja) * | 2007-03-02 | 2013-05-08 | 日本特殊陶業株式会社 | 無機材料部品 |
| JP5221887B2 (ja) * | 2007-03-22 | 2013-06-26 | 京セラSlcテクノロジー株式会社 | 配線基盤の製造方法 |
| JP5092547B2 (ja) * | 2007-05-30 | 2012-12-05 | 凸版印刷株式会社 | 印刷配線板の製造方法 |
| JP5173338B2 (ja) | 2007-09-19 | 2013-04-03 | 新光電気工業株式会社 | 多層配線基板及びその製造方法 |
| JP5096855B2 (ja) * | 2007-09-27 | 2012-12-12 | 新光電気工業株式会社 | 配線基板の製造方法及び配線基板 |
| JP2009176889A (ja) * | 2008-01-23 | 2009-08-06 | Hitachi Chem Co Ltd | 多層プリント配線板用絶縁樹脂組成物、支持体付き絶縁フィルム、多層プリント配線板及びその製造方法 |
| JP2009224461A (ja) * | 2008-03-14 | 2009-10-01 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法 |
| JP2009272533A (ja) * | 2008-05-09 | 2009-11-19 | Hitachi Chem Co Ltd | 多層プリント配線板用支持体付き絶縁フィルム、多層プリント配線板およびその製造方法 |
| JP5479233B2 (ja) * | 2010-06-04 | 2014-04-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
-
2010
- 2010-06-24 JP JP2010143862A patent/JP5578962B2/ja active Active
-
2011
- 2011-05-24 US US13/114,417 patent/US8450852B2/en active Active
- 2011-06-23 CN CN201110169981.9A patent/CN102300396B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540311A (zh) * | 2008-03-19 | 2009-09-23 | 新光电气工业株式会社 | 多层配线基板以及制造多层配线基板的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102300396A (zh) | 2011-12-28 |
| US20110316148A1 (en) | 2011-12-29 |
| US8450852B2 (en) | 2013-05-28 |
| JP2012009606A (ja) | 2012-01-12 |
| JP5578962B2 (ja) | 2014-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102300396B (zh) | 配线基板 | |
| CN102270624B (zh) | 配线基板及其制造方法 | |
| JP5715835B2 (ja) | 半導体パッケージ及びその製造方法 | |
| JP5566200B2 (ja) | 配線基板及びその製造方法 | |
| US9253897B2 (en) | Wiring substrate and method for manufacturing the same | |
| KR101968957B1 (ko) | 배선 기판 및 그 제조 방법, 반도체 패키지 | |
| CN101653053B (zh) | 多层线路板及其制造方法 | |
| JP6170832B2 (ja) | 配線基板、半導体装置及び配線基板の製造方法 | |
| US8389871B2 (en) | Multilayered wiring board and method of manufacturing the same | |
| US20140102768A1 (en) | Wiring board and method for manufacturing the same | |
| CN102612263B (zh) | 多层配线基板 | |
| US9997474B2 (en) | Wiring board and semiconductor device | |
| TW200405777A (en) | Multilayer wiring board | |
| JP2013214578A (ja) | 配線板及びその製造方法 | |
| CN102132639A (zh) | 电子部件内置线路板及其制造方法 | |
| JP2017157666A (ja) | 配線基板、半導体装置、配線基板の製造方法及び半導体装置の製造方法 | |
| US9392684B2 (en) | Wiring substrate and method for manufacturing wiring substrate | |
| JP5221887B2 (ja) | 配線基盤の製造方法 | |
| JP5444136B2 (ja) | 配線基板 | |
| JP5436177B2 (ja) | 配線基板内蔵用部品及びその製造方法、並びに配線基板 | |
| JP2013080823A (ja) | プリント配線板及びその製造方法 | |
| JP5223973B1 (ja) | プリント配線板及びプリント配線板の製造方法 | |
| JP4268563B2 (ja) | 多層配線基板およびその製造方法 | |
| JP2010109104A (ja) | 配線基板およびその製造方法 | |
| KR101730468B1 (ko) | 범프가 포함된 인쇄회로기판 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |