WO2016117123A1 - 撮像装置、および内視鏡 - Google Patents

撮像装置、および内視鏡 Download PDF

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Publication number
WO2016117123A1
WO2016117123A1 PCT/JP2015/051884 JP2015051884W WO2016117123A1 WO 2016117123 A1 WO2016117123 A1 WO 2016117123A1 JP 2015051884 W JP2015051884 W JP 2015051884W WO 2016117123 A1 WO2016117123 A1 WO 2016117123A1
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WO
WIPO (PCT)
Prior art keywords
protective film
imaging device
wiring board
solder
light receiving
Prior art date
Application number
PCT/JP2015/051884
Other languages
English (en)
French (fr)
Inventor
和也 前江田
昌一郎 川除
Original Assignee
オリンパス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オリンパス株式会社 filed Critical オリンパス株式会社
Priority to JP2016570458A priority Critical patent/JP6384879B2/ja
Priority to PCT/JP2015/051884 priority patent/WO2016117123A1/ja
Publication of WO2016117123A1 publication Critical patent/WO2016117123A1/ja
Priority to US15/652,908 priority patent/US10085627B2/en

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • A61B1/051—Details of CCD assembly
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00064—Constructional details of the endoscope body
    • A61B1/0011—Manufacturing of endoscope parts
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00121—Connectors, fasteners and adapters, e.g. on the endoscope handle
    • A61B1/00124—Connectors, fasteners and adapters, e.g. on the endoscope handle electrical, e.g. electrical plug-and-socket connection
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/005—Flexible endoscopes
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
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    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
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    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00114—Electrical cables in or with an endoscope
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Definitions

  • an image pickup element in which a plurality of electrode pads are arranged in a row on an inclined surface which is inclined at an acute angle with respect to a light receiving surface is bonded to each of the plurality of electrode pads of the image pickup element through solder bumps.
  • the present invention relates to an imaging device including a plurality of first bonding electrodes arranged in a row at an end portion thereof, and an endoscope including the imaging device.
  • the imaging device manufactured by the wafer level CSP technology is small, it greatly contributes to the diameter reduction of the endoscope.
  • a plurality of light receiving portions and a plurality of external electrodes connected to the respective light receiving portions are formed on a semiconductor wafer.
  • a glass wafer is bonded to the light receiving surface of the semiconductor wafer to produce a bonded wafer.
  • Vias are formed to reach the external electrodes from the side opposite to the light receiving surface of the bonded wafer.
  • the light receiving surface of the imaging device obtained by cutting the bonded wafer is covered with a cover glass, an electric signal can be transmitted to and received from the light receiving unit through the external electrode exposed on the bottom surface of the via.
  • JP-A-2014-75764 discloses an imaging device in which a plurality of electrode pads each connected to an external electrode of a light receiving surface are arranged in a row on the inclined wall surface of the through trench. There is. Each of the plurality of electrode pads is joined to a plurality of bonding electrodes arranged in a row at the end of the wiring board via the bumps. A signal cable is joined to the other end of the wiring board.
  • the arrangement interval (arrangement pitch) of electrode pads of a small imaging device is very narrow. For this reason, when the size of the solder bumps is large when the electrode pads of the image pickup element and the bonding electrodes of the wiring board are soldered, the melted solder may spread and the adjacent bumps may be short-circuited. there were. For this reason, it is necessary to arrange small (low height) solder bumps in accordance with the arrangement pitch. On the other hand, the wiring board and the signal cable need to be joined via large solder bumps in order to secure the joint reliability.
  • JP-A-2009-016623 discloses an imaging device in which a plurality of external electrodes are exposed at the bottom of a groove by forming a groove (wide via) reaching the light receiving surface from the opposing surface side. .
  • An object of the present invention is to provide a highly reliable imaging device and an endoscope equipped with the imaging device.
  • a light receiving portion is formed on a light receiving surface, and a plurality of electrode pads connected to the light receiving portion are arranged in a row on an inclined surface inclined with respect to the light receiving surface.
  • An imaging element, a transparent member adhered via an adhesive layer so as to cover the light receiving surface, and a plurality of electrode pads of the imaging element at a first end of a first main surface A plurality of first bonding electrodes joined to each other via a first solder bump are arranged in a row, and a plurality of second bonding electrodes are provided at a second end facing the first end.
  • An imaging device comprising: a signal cable having a plurality of conducting wires; A first protective film surrounding the plurality of first solder bumps covering the first end of the first main surface, the first protective film being thicker than the height of the first bumps; A second protective film covering the second end of the main surface of the semiconductor substrate and surrounding the plurality of second solder bumps, the second protective film being thicker than the thickness of the first protective film and the height of the second solder bumps; And the above-mentioned wiring board.
  • a light receiving portion is formed on the light receiving surface, and a plurality of electrode pads connected to the light receiving portion are arranged in a row on an inclined surface which is inclined with respect to the light receiving surface.
  • the plurality of electrodes of the imaging element provided on the imaging element, the transparent member adhered via the adhesive layer so as to cover the light receiving surface, and the first end of the first main surface
  • a plurality of first bonding electrodes joined to each of the pads via the first solder bumps are arranged in a row, and a plurality of first bonding electrodes are formed at the second end facing the first end.
  • An imaging device comprising a signal cable having a plurality of conductors joined together, the imaging device comprising: A first protective film surrounding the plurality of first solder bumps covering the first end of the first main surface, the first protective film being thicker than the height of the first bumps; A second protective film covering the second end of the main surface of the semiconductor substrate and surrounding the plurality of second solder bumps, the second protective film being thicker than the thickness of the first protective film and the height of the second solder bumps;
  • the image pickup device having the protective film of the above is provided at the distal end portion of the insertion portion.
  • an endoscope having a highly reliable imaging device and a highly reliable imaging device.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG. It is a disassembled perspective view of the wiring board of the imaging device of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of the image pick-up element of the imaging device of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of the image pick-up element of the imaging device of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of the image pick-up element of the imaging device of 1st Embodiment. It is sectional drawing for demonstrating the manufacturing method of the image pick-up element of the imaging device of 1st Embodiment.
  • the imaging device 1 includes an imaging element 10 made of a silicon substrate, a wiring board 40, and a signal cable 50.
  • a plurality of external electrodes 12 electrically connected to the light receiving unit 11 via a wire (not shown) are provided in a row at an end of the light receiving surface 10SA where the light receiving unit 11 of the substantially rectangular imaging element 10 is formed. It is done.
  • the entire light receiving surface 10SA of the imaging element 10 is covered with a cover glass 30 which is a transparent member via an adhesive layer 20.
  • grooves 10T On the side of the facing surface 10SB of the imaging element 10, there are grooves 10T having inclined surfaces 10SS and 10ST, both of which are inclined at an acute angle with respect to the light receiving surface 10SA.
  • the back surface of the external electrode 12 is exposed at the bottom of the groove 10T. That is, the groove 10T is a wide via penetrating through the silicon substrate.
  • the external electrodes 12 and a plurality of electrode pads 13 electrically connected via the wirings 13L are provided in a row.
  • the electrode pad 13 is electrically connected to the light receiving unit 11.
  • the extended portion of the wiring 13 ⁇ / b> L may be the electrode pad 13.
  • first bonding electrodes 44 are arranged in a row at the first end 40S1 and opposed to the first end
  • a plurality of second bonding electrodes 46 are arranged in a row at the second end 40S2 of the second bonding portion.
  • the first bonding electrode 44 is bonded to the electrode pad 13 via the first solder bump 54.
  • the second bonding electrode 46 is bonded to the conducting wire 51 of the signal cable 50 via the second solder bump 56.
  • the first bonding electrode 44 and the second bonding electrode 46 are electrically connected via a wire (not shown).
  • the bonding portion between the first bonding electrode 44 and the electrode pad 13 is sealed with a sealing resin 57.
  • the arrangement pitch of the first bonding electrodes 44 is narrower than the arrangement pitch of the second bonding electrodes 46.
  • the height H 54 of the first solder bump 54 is smaller than the height H 54 of the second solder bump 56.
  • the height H 54 of the first solder bump 54 is 10 ⁇ m
  • the height H 56 of the second solder bump 56 is 50 ⁇ m.
  • a first protective film 42 surrounding a plurality of first solder bumps 54 is disposed.
  • a second protective film 43 surrounding the plurality of second solder bumps 56 is disposed on the second end 40S2 opposite to the first end 40S1. That is, the first protective film 42 has a plurality of openings 42 H, and the second protective film 43 has a plurality of openings 43 H.
  • the thickness D43 of the second protective film 43 is thicker than the thickness D42 of the first protective film 42.
  • the thickness D42 of the first protective film 42 is 1.0 ⁇ m
  • the thickness D43 of the second protective film 43 is 30 ⁇ m.
  • the height H54 of the first solder bump 54 and the height H56 of the second solder bump 56 are largely different.
  • the first solder bump 54 and the second solder bump 56 are surrounded by the first protective film 42 and the second protective film 43 having a thickness corresponding to their respective heights. For this reason, even if it melt
  • the outer electrode 12 is made of a metal conductor such as copper or aluminum.
  • the cover glass 30 (glass wafer) is adhered to the light receiving surface 10SA via the adhesive layer 20.
  • the adhesive layer 20 is made of, for example, a transparent UV-curable resin.
  • an etching mask 19 made of, for example, a photoresist is disposed on the facing surface 10SB opposed to the light receiving surface 10SA of the silicon substrate 10.
  • the etching mask 19 has a substantially rectangular opening immediately above the etching region, that is, the external electrode 12.
  • the silicon substrate 10 is wet-etched from the side of the facing surface 10SB with an alkaline solution such as KOH or TMAH, for example, to form a groove 10T.
  • the groove 10T is a wide via penetrating through the silicon substrate 10.
  • the wall surfaces of the groove 10T formed by anisotropic etching are inclined surfaces 10SS and 10ST at acute angles with respect to the light receiving surface 10SA.
  • the back surfaces of the plurality of external electrodes 12 are exposed on the bottom surface of the groove 10T.
  • the applicant discloses in detail the method of manufacturing the groove 10T, etc. in Japanese Patent Laid-Open No. 2009-016623.
  • the electrode pad 13 is disposed on the inclined surface 10SS.
  • the electrode pad 13 is electrically connected to the external electrode 12 by a wire 13L extending from the bottom surface of the groove 10T to the inclined surface 10SS.
  • the imaging device of the modified example having the imaging element with the cutout portion 10C is smaller in diameter than the imaging device 1.
  • the wiring board 40 is a flexible wiring board using, for example, polyimide as a base 41 as shown in FIG.
  • the substrate 41 may be a non-flexible substrate made of glass epoxy resin or the like. However, as described later, in order to be accommodated in the projection plane of the imaging device 10, a flexible substrate is preferable.
  • the thickness of the first protective film 42 corresponds to the arrangement pitch of the first bonding electrodes 44 of the small-sized imaging device 1, in other words, the thickness corresponding to the height H54 of the first solder bumps 54, for example, 0. It is preferable that they are 1 micrometer or more and 3.0 micrometers or less. It is preferable that the first protective film 42 be made of a solder repellent material in order to prevent a short circuit of the adjacent first solder bumps 54 even if the film thickness is thin in the above range.
  • the solder repellent material is a so-called “solder-repelling” material having poor solder wettability, and of course, a material whose heat-resistant temperature is higher than the solder bonding temperature.
  • a solder repellent material having a contact angle ⁇ of 45 degrees or more, preferably 60 degrees or more with respect to the solder can be used. If the contact angle ⁇ of the first protective film 42 with respect to the solder is equal to or more than the above range, the solder can be prevented from spreading.
  • the contact angle ⁇ is preferably as large as possible, and the upper limit may be 180 degrees.
  • silicon oxide, magnesium fluoride, aluminum nitride, boron nitride, silicon nitride, silicon carbide, boron carbide, calcium carbide, diamond like carbon (DLC), polytetrafluoroethylene (PTFE), or tetrafluoroethylene ⁇ tetrafluoroethylene ⁇ ⁇ ⁇ Perfluoro alkyl vinyl ether copolymer (PFA) etc. can be used.
  • solder repellent material silicon oxide or silicon nitride which is easy to form and pattern is particularly preferable.
  • the solder repellent material is formed into a film by a sputtering method, a vapor deposition method or a CVD method.
  • the region other than the opening 42H and the first end 40S1 of the first protective film 42 is removed by, for example, etching after the first protective film 42 is disposed on the entire surface of the first major surface 40SA. Ru.
  • the solder wettability can be evaluated by dissolving 20 mg of solder on the test surface and measuring the contact angle ⁇ with respect to the test surface of the melted solder. While the contact angle ⁇ with respect to the polyimide as the substrate 41 of the wiring board of the bonding member 23 was less than 30 degrees, the contact angle ⁇ with respect to silicon oxide was 70 degrees or more.
  • the second protective film 43 preferably has a thickness of, for example, 5 ⁇ m or more and 100 ⁇ m or less according to the height H 56 of the second solder bump 56.
  • a solder resist made of an epoxy resin or the like is preferably disposed by a printing method, an inkjet method, or the like. Since the second protective film 43 made of resin is excellent in flexibility, the flexibility of the wiring board 40 is not impaired even if it is thick.
  • the opening 43H of the second protective film 43 is taken into consideration when designing the printing screen.
  • the first solder bumps 54 and the second solder bumps 56 are disposed on the wiring board 40.
  • the first solder bumps 54 and the second solder bumps 56 are made of, for example, lead-free solder such as SnAgCu alloy or SnZnAl alloy, and the composition of the both may be the same or different.
  • the first solder bumps 54, 56 may be printed with solder paste on the bonding electrodes 44, 46, or may be disposed by plating.
  • the first solder bumps 54 may be disposed on the electrode pads 13 of the imaging device 10.
  • the first bonding electrode 44 of the wiring board 40 and the electrode pad 13 of the imaging element 10 are bonded via the first solder bump 54. That is, the first end 40S1 of the wiring board 40 is fixed to the light receiving surface 10SA of the imaging device 10 at an acute angle as in the case of the inclined surface 10SS of the imaging device 10.
  • the first solder bumps 54 are surrounded by a first protective film 42 having a thickness corresponding to the height H54. Therefore, the first solder bumps 54 do not spread around even when melted, and the first bonding electrodes 44 of the wiring board 40 and the electrode pads 13 of the imaging device 10 are bonded.
  • the sealing resin 57 is filled in the bonding portion and hardened.
  • the sealing resin 57 is, for example, a thermosetting epoxy resin which is liquid in an uncured state.
  • the conducting wire 51 of the signal cable 50 is bonded to the second bonding electrode 46 of the wiring board 40 via the second solder bump 56.
  • the second solder bumps 56 are surrounded by a second protective film 43 having a thickness corresponding to the height H56. For this reason, the second solder bumps 56 do not spread around even if they melt, and the second bonding electrodes 46 of the wiring board 40 and the conductive wires 51 of the signal cable 50 are bonded.
  • the wiring board 40 to which the signal cable 50 is joined may be joined to the imaging device 10.
  • the temporarily fixed imaging device 10, the wiring board 40, and the signal cable 50 may be simultaneously joined by a reflow process.
  • the imaging device 1 has high reliability of the joint.
  • the first protective film 42 is very thin as compared to the second protective film 43 made of solder resist, since it is made of a solder repellent material, the molten solder does not spread around and a short circuit does not occur.
  • the wiring board 40 positioned on the rear side (opposite side of the cover glass) of the imaging device 10 overlaps the imaging device 10 when viewed in plan from the thickness direction, that is, the imaging device The whole is located within 10 projection planes.
  • the wiring board 40 is flexible, even if the length of the wiring board 40 is long, the whole can be disposed within the projection plane of the imaging device 10 by being curved and deformed.
  • the imaging device 1 has a small diameter because the wiring board 40 does not protrude outside the outer shape of the imaging element 10.
  • an imaging device 1A according to the second embodiment and an imaging device 1B according to a modification of the second embodiment will be described.
  • the same reference numerals are given to components having the same functions, and descriptions thereof will be omitted.
  • the first protective film 42A covers not only the first end 40S1 of the first main surface 40SA of the wiring board 40 but also the whole thereof.
  • the first protective film 42A has not only the opening 42H1 corresponding to the first solder bump 54 but also an opening 42H3 corresponding to the second solder bump 56. That is, the first protective film 42A surrounds the first solder bump 54 and the second solder bump 56.
  • the second solder bump 56 is joined to the conducting wire 51 not only through the opening 43H3 of the second protective film 43 but also through the opening 42H3 of the first protective film 42.
  • the first protective film 42B covers not only the first end 40S1 of the first main surface 40SA of the wiring board 40 but the whole thereof.
  • the second protective film 43B covers the area of the first main surface 40SA of the wiring board 40 excluding the first end 40S1.
  • the imaging device 1A and the imaging device 1B have the effect of the imaging device 1. Furthermore, since the second solder bump 56 is also surrounded by the first protective film 42A, the imaging device 1A has higher reliability than the imaging device 1. Further, in the imaging device 1B, since the first protective film 42A is covered by the second protective film 43B except for the first end 40S1, even if the wiring board 40 is largely deformed, cracking or the like occurs. Since the easy first protective film 42A is covered with the flexible thick second protective film 43B, the reliability is higher than that of the imaging device 1A.
  • an imaging device 1C of a third embodiment will be described. Note that the imaging device 1C is similar to the imaging devices 1, 1A, and 1B, and has the same effect, so the same reference numerals are given to the components having the same functions, and the description is omitted.
  • the electronic component 60 is mounted on the first main surface 40SA of the wiring board 40C of the imaging device 1C. That is, the plurality of third bonding electrodes 45 are disposed on the first main surface 40SA of the wiring board 40C, and the electronic component 60 includes the third bonding electrodes 45 and the third solder bumps 55. It is joined through. Then, the first protective film 42C and the second protective film 43C surround the plurality of third solder bumps 55, that is, there is an opening 42H2 in the first protective film 42C, and the second protective film 43C Has an opening 43H2.
  • the position of the third bonding electrode 45 is designed in accordance with the position of the bonding portion of the electronic component 60 such as a chip capacitor and a chip inductor. Also.
  • the number of joints of one electronic component 60 may be three or more.
  • a plurality of electronic components 60 may be mounted.
  • the electronic component 60 may be mounted on the second main surface 20SB.
  • the imaging device 1C has a small diameter because the wiring board 40C on which the electronic component 60 is mounted does not protrude outside the outer shape of the imaging element 10.
  • the endoscope 2 includes the imaging devices 1 and 1A to 1C described above at the distal end portion 3A of the insertion portion 3. Therefore, the description of the imaging device 1 and the like is omitted.
  • an endoscope system 9 including the endoscope 2 includes the endoscope 2, a processor 5A, a light source device 5B, and a monitor 5C.
  • the endoscope 2 captures an in-vivo image of the subject by inserting the insertion unit 3 into a body cavity of the subject, and outputs an imaging signal. That is, the endoscope 2 has one of the imaging devices 1 and 1A to 1F at the distal end portion of the insertion portion 3.
  • the operation unit 4 has a treatment tool insertion port 4A of a channel into which a treatment tool such as a forceps, an electric knife, and a test probe is inserted in a body cavity of a subject.
  • the insertion portion 3 includes a distal end portion 3A in which the imaging device 1 is disposed, a bendable curved portion 3B continuously provided on the proximal end side of the distal end portion 3A, and a continuous end provided on the proximal end side of the curved portion 3B. And the flexible tube portion 3C.
  • the bending portion 3B is bent by the operation of the operation unit 4.
  • a signal cable 50 connected to the imaging device 1 at the distal end 3A is inserted through the universal cord 4B disposed on the proximal end side of the operation unit 4.
  • the universal cord 4B is connected to the processor 5A and the light source device 5B via the connector 4C.
  • the processor 5A controls the entire endoscope system 9, performs signal processing on an imaging signal output from the imaging device 1, and outputs an image signal.
  • the monitor 5C displays an image signal output by the processor 5A.
  • the light source device 5B includes, for example, a white LED.
  • the white light emitted from the light source device 5B is guided to the illumination optical system 3D (see FIG. 2B) of the tip 3A through a light guide (not shown) through which the universal cord 4B is inserted, and illuminates the subject.
  • the endoscope 2 has high reliability because the distal end portion 3A of the insertion portion 3 includes the highly reliable imaging devices 1 and 1A to 1C.

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Abstract

撮像装置１は、傾斜面１０ＳＳに複数の電極パッド１３が列設されている撮像素子１０と、第１の端部４０Ｓ１に複数の電極パッド１３のそれぞれと第１の半田バンプ５４を介して接合されている複数の第１の接合電極４４が列設されており、第２の端部４０Ｓ２に複数の第２の接合電極４６が列設されている配線板４０と、複数の第２の接合電極４６のそれぞれと第２の半田バンプ５６を介して接合されている信号ケーブル５０と、を具備する撮像装置１であって、第１の端部４０Ｓ１を覆う第１の保護膜４２と、第２の端部４０Ｓ２を覆う、第１の保護膜４２の厚さおよび第２の半田バンプ５６の高さよりも厚い、第２の保護膜４３と、を配線板４０が有する。

Description

撮像装置、および内視鏡
　本発明は、受光面に対して鋭角に傾斜している傾斜面に複数の電極パッドが列設されている撮像素子と、前記撮像素子の前記複数の電極パッドのそれぞれと半田バンプを介して接合されている複数の第１の接合電極が端部に列設されている配線板と、を具備する撮像装置、および前記撮像装置を具備する内視鏡に関する。
　ウエハレベルＣＳＰ技術により作製される撮像装置は小型であるため、内視鏡の細径化に大きく寄与している。
　ウエハレベルＣＳＰ型の撮像装置の製造方法では、最初に、半導体ウエハに、複数の受光部と、それぞれの受光部と接続された複数の外部電極が形成される。半導体ウエハの受光面にガラスウエハが接着されて接合ウエハが作製される。接合ウエハの受光面と対向する対向面側から外部電極に到達するビアが形成される。接合ウエハの切断により得られた撮像装置の受光面はカバーガラスで覆われているが、ビアの底面に露出している外部電極を介して受光部と電気信号を送受信することができる。
　日本国特開２０１４－７５７６４号公報には、貫通トレンチの傾斜している壁面に、それぞれが受光面の外部電極と接続されている複数の電極パッドが列設されている撮像素子が開示されている。複数の電極パッドのそれぞれは、バンプを介して配線板の端部に列設された複数の接合電極と接合されている。配線板のもう一方の端部には信号ケーブルが接合されている。
　小型の撮像装置の電極パッドの配設間隔（配設ピッチ）は非常に狭い。このため、撮像素子の電極パッドと配線板の接合電極とを半田接合するときに、半田バンプの大きさが大きいと、溶融した半田が広がってしまい、隣り合うバンプ同士が短絡してしまうおそれがあった。このため、配設ピッチに応じた小さな（高さの低い）半田バンプを配設する必要がある。一方、配線板と信号ケーブルとは、接合信頼性を担保するには、大きな半田バンプを介して接合する必要がある。
　すなわち、信号ケーブルとの接合と撮像素子との接合とで、適切な半田バンプの大きさが異なるための、両者の接合信頼性を両立することは容易ではなかった。
　なお、特開２００９－０１６６２３号公報には、対向面側から受光面に達する溝（幅広のビア）を形成することで、溝の底面に複数の外部電極を露出した撮像装置が開示されている。
特開２０１４－０７５７６４号公報 特開２００９－０１６６２３号公報
　本発明は、信頼性の高い撮像装置、および前記撮像装置を具備する内視鏡を提供することを目的とする。
　本発明の実施形態の撮像装置は、受光面に受光部が形成されており、前記受光面に対して傾斜している傾斜面に前記受光部と接続されている複数の電極パッドが列設されている、撮像素子と、前記受光面を覆うように接着層を介して接着されている透明部材と、第１の主面の第１の端部に、前記撮像素子の前記複数の電極パッドのそれぞれと第１の半田バンプを介して接合されている複数の第１の接合電極が列設されており、前記第１の端部と対向している第２の端部に複数の第２の接合電極が列設されている配線板と、前記配線板の前記複数の第２の接合電極のそれぞれと、前記第１の半田バンプよりも高さの高い第２の半田バンプを介して接合されている複数の導線を有する信号ケーブルと、を具備する撮像装置であって、
　前記第１の主面の前記第１の端部を覆う、前記複数の第１の半田バンプを取り囲んでいる、前記第１のバンプの高さよりも厚い、第１の保護膜と、前記第１の主面の前記第２の端部を覆う、前記複数の第２の半田バンプを取り囲んでいる、前記第１の保護膜の厚さおよび前記第２の半田バンプの高さよりも厚い、第２の保護膜と、を前記配線板が有する。
　また、別の実施形態の内視鏡は、受光面に受光部が形成されており、前記受光面に対して傾斜している傾斜面に前記受光部と接続されている複数の電極パッドが列設されている、撮像素子と、前記受光面を覆うように接着層を介して接着されている透明部材と、第１の主面の第１の端部に、前記撮像素子の前記複数の電極パッドのそれぞれと第１の半田バンプを介して接合されている複数の第１の接合電極が列設されており、前記第１の端部と対向している第２の端部に複数の第２の接合電極が列設されている配線板と、前記配線板の前記複数の第２の接合電極のそれぞれと、前記第１の半田バンプよりも高さの高い第２の半田バンプを介して接合されている複数の導線を有する信号ケーブルと、を具備する撮像装置であって、
　前記第１の主面の前記第１の端部を覆う、前記複数の第１の半田バンプを取り囲んでいる、前記第１のバンプの高さよりも厚い、第１の保護膜と、前記第１の主面の前記第２の端部を覆う、前記複数の第２の半田バンプを取り囲んでいる、前記第１の保護膜の厚さおよび前記第２の半田バンプの高さよりも厚い、第２の保護膜と、を前記配線板が有する撮像装置を、挿入部の先端部に具備する。
　本発明によれば、信頼性の高い撮像装置、および信頼性の高い撮像装置を具備する内視鏡を提供できる。
第１実施形態の撮像装置の構成を概略的に示す斜視図である。 図１のＩＩ－ＩＩ線に沿った断面図である。 第１実施形態の撮像装置の配線板の分解斜視図である。 第１実施形態の撮像装置の撮像素子の製造方法を説明するための断面図である。 第１実施形態の撮像装置の撮像素子の製造方法を説明するための断面図である。 第１実施形態の撮像装置の撮像素子の製造方法を説明するための断面図である。 第１実施形態の変形例の撮像装置の撮像素子の製造方法を説明するための断面図である。 第２実施形態の撮像装置の配線板の分解斜視図である。 第２実施形態の変形例の撮像装置の配線板の分解斜視図である。 第３実施形態の撮像装置の配線板の分解斜視図である。 第３実施形態の撮像装置の断面図である。 第３実施形態の内視鏡を含む内視鏡システムの斜視図である。
　以下、図面を参照して本発明の実施の形態を説明する。尚、図面は模式的なものであり、各部材の厚みと幅との関係、それぞれの部材の厚みの比率、電極パッドの数、配列ピットなどは現実のものとは異なる。また、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている。さらに、一部の構成、例えば、シリコン基板の表面の酸化シリコン層および配線等は図示を省略している。
　図１から図３に示すように、撮像装置１は、シリコン基板からなる撮像素子１０と、配線板４０と、信号ケーブル５０と、を具備する。略矩形の撮像素子１０の受光部１１が形成された受光面１０ＳＡの端部には、受光部１１と配線（不図示）を介して電気的に接続されている複数の外部電極１２が列設されている。
　撮像素子１０の受光面１０ＳＡの全面は接着層２０を介して透明部材であるカバーガラス３０に覆われている。
　撮像素子１０の対向面１０ＳＢ側には、ともに受光面１０ＳＡに対して鋭角に傾斜している傾斜面１０ＳＳおよび傾斜面１０ＳＴを壁面とする溝１０Ｔがある。溝１０Ｔの底面には外部電極１２の裏面が露出している。すなわち、溝１０Ｔはシリコン基板を貫通している幅広のビアである。
　そして、傾斜面１０ＳＳには、それぞれが外部電極１２と、配線１３Ｌを介して電気的に接続された複数の電極パッド１３が列設されている。このため、電極パッド１３は、受光部１１と電気的に接続されている。なお、配線１３Ｌの延設部が電極パッド１３であってもよい。
　一方、平板状の配線板４０の基体４１の第１の主面４０ＳＡには、第１の端部４０Ｓ１に複数の第１の接合電極４４が列設されており、第１の端部と対向している第２の端部４０Ｓ２に複数の第２の接合電極４６が列設されている。第１の接合電極４４は第１の半田バンプ５４を介して電極パッド１３と接合されている。一方、第２の接合電極４６は第２の半田バンプ５６を介して信号ケーブル５０の導線５１と接合されている。第１の接合電極４４と第２の接合電極４６とは配線（不図示）を介して電気的に接続されている。
　接合信頼性を高めるため、第１の接合電極４４と電極パッド１３との接合箇所は封止樹脂５７で封止されている。
　第１の接合電極４４の配設ピッチは、第２の接合電極４６の配設ピッチよりも狭い。また、第１の半田バンプ５４の高さＨ５４は、第２の半田バンプ５６の高さＨ５４よりも低い。例えば、第１の半田バンプ５４は、高さＨ５４が１０μｍなのに対して、第２の半田バンプ５６は、高さＨ５６が５０μｍである。
　配線板４０の第１の主面４０ＳＡの第１の端部４０Ｓ１には、複数の第１の半田バンプ５４を取り囲んでいる第１の保護膜４２が配設されている。一方、第１の端部４０Ｓ１と対向する第２の端部４０Ｓ２には、複数の第２の半田バンプ５６を取り囲んでいる第２の保護膜４３が配設されている。すなわち、第１の保護膜４２には複数の開口４２Ｈがあり、第２の保護膜４３には複数の開口４３Ｈがある。
　第２の保護膜４３の厚さＤ４３は、第１の保護膜４２の厚さＤ４２よりも厚い。例えば、第１の保護膜４２は厚さＤ４２が１．０μｍであるのに対して、第２の保護膜４３は厚さＤ４３が３０μｍである。
　撮像装置１は、第１の半田バンプ５４の高さＨ５４と第２の半田バンプ５６の高さＨ５６とが大きく異なっている。しかし、第１の半田バンプ５４、第２の半田バンプ５６は、それぞれの高さに応じた厚さの第１の保護膜４２、第２の保護膜４３に取り囲まれている。このため、溶融しても半田が周囲に広がることはなく、かつ、確実に両者を接合できる、すなわち、撮像装置１は接合箇所の信頼性が高い。
＜製造方法＞
　次に撮像装置１の製造方法を説明する。なお、カバーガラス３０が接着された撮像素子１０は、接合ウエハの切断により作製されるが、以下は個々の撮像素子として説明する。
　図４Ａに示すように、シリコン基板（撮像素子）１０の受光面１０ＳＡに公知の半導体製造技術を用いて受光部１１と、受光部１１と配線（不図示）で接続された複数の外部電極１２と、が形成される。外部電極１２は、銅またはアルミニウム等の金属導体からなる。受光面１０ＳＡに接着層２０を介してカバーガラス３０（ガラスウエハ）が接着される。接着層２０は例えば透明の紫外線硬化型樹脂からなる。そして、シリコン基板１０の受光面１０ＳＡと対抗する対向面１０ＳＢに、例えば、フォトレジストからなるエッチングマスク１９が配設される。エッチングマスク１９には、エッチング領域、すなわち、外部電極１２の直上に略矩形の開口がある。
　図４Ｂに示すように、シリコン基板１０が対向面１０ＳＢ側から、例えば、ＫＯＨまたはＴＭＡＨ等のアルカリ溶液を用いたウエットエッチング処理され、溝１０Ｔが形成される。溝１０Ｔはシリコン基板１０を貫通している幅広のビアである。
　異方性エッチングにより形成された溝１０Ｔの壁面は、受光面１０ＳＡに対して鋭角の傾斜面１０ＳＳ、１０ＳＴとなる。そして、溝１０Ｔの底面には複数の外部電極１２の裏面が露出している。なお、溝１０Ｔの製造方法等については、出願人が特開２００９－０１６６２３号公報に詳細に開示している。
　図４Ｃに示すように、傾斜面１０ＳＳに電極パッド１３が配設される。電極パッド１３は、溝１０Ｔの底面から傾斜面１０ＳＳまで延設された配線１３Ｌにより、外部電極１２と電気的に接続されている。
　なお、図５に示すように、溝１０Ｔに替えて、切り欠き部１０Ｃを形成してもよい。切り欠き１０Ｃは、ドライエッチング、物理的エッチングまたは機械的な研削等によって形成してもよい。切り欠き部１０Ｃのある撮像素子を有する変形例の撮像装置は、撮像装置１よりも小径である。
　一方、配線板４０は、図３で示したように、例えばポリイミドを基体４１とするフレキシブル配線板である。基体４１としては、ガラスエポキシ樹脂等からなる非可撓性基板であってもよい。しかし、後述するように、撮像素子１０の投影面内に収容するためには、可撓性基板であることが好ましい。
　第１の保護膜４２の厚さは、小型の撮像装置１の第１の接合電極４４の配設ピッチ、言い替えれば、第１の半田バンプ５４の高さＨ５４に応じた厚さ、例えば０．１μｍ以上、３．０μｍ以下であることが好ましい。上記範囲の薄い膜厚であっても、隣り合う第１の半田バンプ５４の短絡を防止するために、第１の保護膜４２は、撥半田材料からなることが好ましい。撥半田材料は半田濡れ性が悪い、いわゆる「半田をはじく」材料であり、もちろん、耐熱温度が半田接合温度より高い材料である。
　第１の保護膜４２には、半田に対する接触角θが４５度以上、好ましくは６０度以上の撥半田材料を用いることができる。第１の保護膜４２の半田に対する接触角θが前記範囲以上であれば、半田が広がることを防止できる。接触角θは大きいほど好ましく上限は１８０度であってもよい。
　撥半田材料として、酸化シリコン、フッ化マグネシウム、窒化アルミニウム、窒化ホウ素、窒化シリコン、炭化ケイ素、炭化ホウ素、炭化カルシウム、ダイヤモンドライクカーボン（ＤＬＣ）、ポリテトラフルオロエチレン（ＰＴＦＥ）、またはテトラフルオロエチレン・パーフルオロアルキルビニルエーテル共重合体（ＰＦＡ）等を用いることができる。
　撥半田材料としては、成膜およびパターニングが容易な、酸化シリコンまたは窒化シリコンが特に好ましい。撥半田材料はスパッタ法、蒸着法またはＣＶＤ法により成膜される。なお、第１の保護膜４２の開口４２Ｈおよび第１の端部４０Ｓ１以外の領域は、例えば、第１の主面４０ＳＡの全面に第１の保護膜４２を配設後に、エッチング等により除去される。
　なお、半田濡れ性は、試験面に半田２０ｍｇを溶かし、溶融した半田の試験面に対する接触角θを測定することで評価できる。接合部材２３の配線板の基体４１であるポリイミドに対する接触角θは３０度未満であったのに対して、酸化シリコンに対する接触角θは７０度以上であった。
　一方、第２の保護膜４３は、厚さが第２の半田バンプ５６の高さＨ５６に応じて、例えば５μｍ以上、１００μｍ以下であることが好ましい。上記範囲の厚さの第２の保護膜４３は、エポキシ樹脂等からなるソルダレジストを印刷法またはインクジェット法等により配設することが好ましい。なお、樹脂からなる第２の保護膜４３は可撓性に優れているため、厚くても配線板４０の可撓性を損なうことはない。
　第２の保護膜４３を印刷法で配設する場合には、第２の保護膜４３の開口４３Ｈは、印刷スクリーンの設計時に考慮される。
　配線板４０に第１の半田バンプ５４および第２の半田バンプ５６が配設される。第１の半田バンプ５４と第２の半田バンプ５６とは、例えば、ＳｎＡｇＣｕ合金、ＳｎＺｎＡｌ合金等の鉛フリー半田からなり、両者の組成は同じでも良いし異なっていてもよい。例えば、第１の半田バンプ５４、５６は、半田ペーストを接合電極４４、４６の上に印刷してもよいし、めっき法により配設してもよい。なお、撮像素子１０の電極パッド１３に第１の半田バンプ５４を配設してもよい。
　図２等に示すように、配線板４０の第１の接合電極４４と撮像素子１０の電極パッド１３とが第１の半田バンプ５４を介して接合される。すなわち、配線板４０の第１の端部４０Ｓ１は、撮像素子１０の受光面１０ＳＡに対して撮像素子１０の傾斜面１０ＳＳと同じように鋭角に傾斜した角度で固定される。第１の半田バンプ５４は高さＨ５４に応じた厚さの第１の保護膜４２で取り囲まれている。このため第１の半田バンプ５４は溶融しても周囲に広がることはなく、かつ、配線板４０の第１の接合電極４４と撮像素子１０の電極パッド１３とを接合する。
　封止樹脂５７が接合箇所に充填され硬化処理される。封止樹脂５７は、例えば、未硬化状態では液体の熱硬化型のエポキシ樹脂である。
　次に、配線板４０の第２の接合電極４６に信号ケーブル５０の導線５１が第２の半田バンプ５６を介して接合される。第２の半田バンプ５６は高さＨ５６に応じた厚さの第２の保護膜４３で取り囲まれている。このため、第２の半田バンプ５６は溶融しても周囲に広がることはなく、かつ、配線板４０の第２の接合電極４６と信号ケーブル５０の導線５１とを接合する。
　なお、信号ケーブル５０が接合された配線板４０が撮像素子１０に接合されてもよい。また、仮固定された、撮像素子１０、配線板４０および信号ケーブル５０が、同時にリフロー処理により接合されてもよい。
　以上の説明のように、撮像装置１は接合箇所の信頼性が高い。特に、第１保護膜４２は、ソルダレジストからなる第２保護膜４３と比較すると非常に薄いが、撥半田材料からなるため、溶融した半田が周囲に広がって短絡が発生することがない。
　なお、撮像装置１は、撮像素子１０よりも後方側（カバーガラスと反対側）に位置する配線板４０は、撮像素子１０を厚み方向から平面視すると、撮像素子１０に重なる領域、すなわち撮像素子１０の投影面内に全体が位置している。特に、配線板４０が可撓性の場合には、配線板４０の長さが長くても湾曲変形することにより撮像素子１０の投影面内に全体を配置することができる。撮像装置１は、配線板４０が撮像素子１０の外形よりも外側にはみ出していないため、細径である。
＜第２実施形態＞
　次に第２実施形態の撮像装置１Ａおよび第２実施形態の変形例の撮像装置１Ｂについて説明する。なお、撮像装置１Ａ、１Ｂは、撮像装置１と類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
　図６に示すように、撮像装置１Ａでは、第１の保護膜４２Ａが配線板４０の第１の主面４０ＳＡの第１の端部４０Ｓ１だけでなく、全体を覆っている。第１の保護膜４２Ａには、第１の半田バンプ５４に対応した開口４２Ｈ１だけでなく、第２の半田バンプ５６に対応した開口４２Ｈ３がある。すなわち、第１の保護膜４２Ａは、第１の半田バンプ５４および第２の半田バンプ５６を取り囲んでいる。
　撮像装置１Ａは、第２の半田バンプ５６は、第２の保護膜４３の開口４３Ｈ３だけでなく第１の保護膜４２の開口４２Ｈ３を介して導線５１と接合されている。
　一方、図７に示すように、変形例の撮像装置１Ｂでは、第１の保護膜４２Ｂが配線板４０の第１の主面４０ＳＡの第１の端部４０Ｓ１だけでなく、全体を覆っている。一方、第２の保護膜４３Ｂは、配線板４０の第１の主面４０ＳＡの第１の端部４０Ｓ１を除く領域を覆っている。
　撮像装置１Ａおよび撮像装置１Ｂは、撮像装置１の効果を有する。さらに撮像装置１Ａは、第２の半田バンプ５６が第１の保護膜４２Ａにも取り囲まれているため、撮像装置１よりも信頼性が高い。　
　また撮像装置１Ｂは、第１の保護膜４２Ａが第１の端部４０Ｓ１を除いて第２の保護膜４３Ｂで覆われているため、配線板４０が大きく変形しても、ひび割れ等が発生しやすい第１の保護膜４２Ａが可撓性の厚い第２の保護膜４３Ｂで覆われているため、撮像装置１Ａよりも更に信頼性が高い。
＜第３実施形態＞
　次に第３実施形態の撮像装置１Ｃについて説明する。なお、撮像装置１Ｃは、撮像装置１、１Ａ、１Ｂと類似しており、同様の効果を有するため、同じ機能の構成要素には同じ符号を付し説明は省略する。
　図８および図９に示すように、撮像装置１Ｃの配線板４０Ｃの第１の主面４０ＳＡには、電子部品６０が実装されている。すなわち、配線板４０Ｃの第１の主面４０ＳＡに複数の第３の接合電極４５が配設されており、電子部品６０が複数の第３の接合電極４５のそれぞれと、第３の半田バンプ５５を介して接合されている。そして、第１の保護膜４２Ｃおよび第２の保護膜４３Ｃが複数の第３の半田バンプ５５を取り囲んでいる、すなわち、第１の保護膜４２Ｃには開口４２Ｈ２があり、第２の保護膜４３Ｃには開口４３Ｈ２がある。
　第３の接合電極４５の位置は、チップコンデンサ、チップインダクタ等の電子部品６０の接合部の位置に応じて設計される。また。ひとつの電子部品６０の接合部の数が３以上であってもよい。さらに、配線板４０Ｃには、１個の電子部品６０しか実装されていないが、複数の電子部品６０が実装されていてもよい。また、第２の主面２０ＳＢにも電子部品６０が実装されていてもよい。
　撮像装置１Ｃは、電子部品６０が実装されている配線板４０Ｃが、撮像素子１０の外形よりも外側にはみ出していないため、細径である。
＜第４実施形態＞
　次に第３実施形態の内視鏡２について説明する。なお、内視鏡２は、すでに説明した撮像装置１、１Ａ～１Ｃを挿入部３の先端部３Ａに具備する。このため、撮像装置１等の説明は省略する。
　図１０に示すように、内視鏡２を含む内視鏡システム９は、内視鏡２と、プロセッサ５Ａと、光源装置５Ｂと、モニタ５Ｃと、を具備する。内視鏡２は、挿入部３を被検体の体腔内に挿入することによって、被検体の体内画像を撮像し撮像信号を出力する。すなわち、内視鏡２は挿入部３の先端部に、撮像装置１、１Ａ～１Ｆのいずれかを具備する。
　内視鏡２の挿入部３の基端側には、内視鏡２を操作する各種ボタン類が設けられた操作部４が配設されている。操作部４には、被検体の体腔内に、生体鉗子、電気メスおよび検査プローブ等の処置具を挿入するチャンネルの処置具挿入口４Ａがある。
　挿入部３は、撮像装置１が配設されている先端部３Ａと、先端部３Ａの基端側に連設された湾曲自在な湾曲部３Ｂと、この湾曲部３Ｂの基端側に連設された可撓管部３Ｃとによって構成される。湾曲部３Ｂは、操作部４の操作によって湾曲する。
　操作部４の基端部側に配設されたユニバーサルコード４Ｂには、先端部３Ａの撮像装置１と接続された信号ケーブル５０が挿通している。
　ユニバーサルコード４Ｂは、コネクタ４Ｃを介してプロセッサ５Ａおよび光源装置５Ｂに接続される。プロセッサ５Ａは内視鏡システム９の全体を制御するとともに、撮像装置１が出力する撮像信号に信号処理を行い画像信号として出力する。モニタ５Ｃは、プロセッサ５Ａが出力する画像信号を表示する。
　光源装置５Ｂは、例えば、白色ＬＥＤを有する。光源装置５Ｂが出射する白色光は、ユニバーサルコード４Ｂを挿通するライトガイド（不図示）を介して先端部３Ａの照明光学系３Ｄ（図２Ｂ参照）に導光され、被写体を照明する。
　内視鏡２は、挿入部３の先端部３Ａに信頼性の高い撮像装置１、１Ａ～１Ｃを具備するため、信頼性が高い。
　本発明は上述した実施形態、または変形例等に限定されるものではなく、本発明の要旨を変えない範囲において、種々の変更、改変、組み合わせ等ができる。
１、１Ａ～１Ｃ…撮像装置
２…内視鏡
９…内視鏡システム
１０…撮像素子
１０Ｔ…溝
１１…受光部
１２…外部電極
１３…電極パッド
１９…エッチングマスク
２０…接着層
２３…接合部材
３０…カバーガラス
４０…配線板
４１…基体
４２…第１の保護膜
４３…第２の保護膜
４４…第１の接合電極
４５…第３の接合電極
４６…第２の接合電極
５０…信号ケーブル
５１…導線
５４…第１の半田バンプ
５５…第３の半田バンプ
５６…第２の半田バンプ
５６…バンプ
６０…電子部品

Claims (10)

  1. 　受光面に受光部が形成されており、前記受光面に対して傾斜している傾斜面に前記受光部と接続されている複数の電極パッドが列設されている、撮像素子と、
    　前記受光面を覆うように接着層を介して接着されている透明部材と、
    　第１の主面の第１の端部に、前記撮像素子の前記複数の電極パッドのそれぞれと第１の半田バンプを介して接合されている複数の第１の接合電極が列設されており、前記第１の端部と対向している第２の端部に複数の第２の接合電極が列設されている配線板と、
    　前記配線板の前記複数の第２の接合電極のそれぞれと、前記第１の半田バンプよりも高さの高い第２の半田バンプを介して接合されている複数の導線を有する信号ケーブルと、を具備する撮像装置であって、
    　前記第１の主面の前記第１の端部を覆う、前記複数の第１の半田バンプを取り囲んでいる、前記第１のバンプの高さよりも厚い、第１の保護膜と、
    　前記第１の主面の前記第２の端部を覆う、前記複数の第２の半田バンプを取り囲んでいる、前記第１の保護膜の厚さおよび前記第２の半田バンプの高さよりも厚い、第２の保護膜と、を前記配線板が有することを特徴とする撮像装置。
  2. 　前記第１の保護膜が、撥半田材料からなり
    　前記第２の保護膜が、ソルダレジストからなることを特徴とする請求項１に記載の撮像装置。
  3. 　前記第１の保護膜が、酸化シリコン、または窒化シリコンからなることを特徴とする請求項２に記載の撮像装置。
  4. 　前記第１の保護膜が、スパッタ法、蒸着法またはＣＶＤ法により成膜されており、
    　前記第２の保護膜が印刷法により成膜されていることを特徴とする請求項３に記載の撮像装置。
  5. 　前記第１の保護膜の厚さが、０．１μｍ以上３μｍ以下であることを特徴とする請求項４に記載の撮像装置。
  6. 　前記第１の保護膜が、前記第１の主面を覆っており、前記複数の第２の接合電極を取り囲んでいることを特徴とする請求項４に記載の撮像装置。
  7. 　前記配線板が可撓性であることを特徴とする請求項６に記載の撮像装置。
  8. 　前記複数の電極パッドと前記複数の第１の接合電極との接合部が、封止用樹脂で封止されていることを特徴とする請求項７に記載の撮像装置。
  9. 　前記配線板の前記第１の主面に複数の第３の接合電極が配設されており、
    　前記第１の保護膜および前記第２の保護膜が前記複数の第３の接合電極を取り囲んでおり、
    　電子部品が、前記複数の第３の接合電極のそれぞれと、第３の半田バンプを介して接合されていることを特徴とする請求項８に記載の撮像装置。
  10. 　請求項１から請求項９のいずれか１項に記載の撮像装置を具備することを特徴とする内視鏡。
PCT/JP2015/051884 2015-01-23 2015-01-23 撮像装置、および内視鏡 WO2016117123A1 (ja)

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