JP6213937B2 - 受光デバイス - Google Patents
受光デバイス Download PDFInfo
- Publication number
- JP6213937B2 JP6213937B2 JP2016513627A JP2016513627A JP6213937B2 JP 6213937 B2 JP6213937 B2 JP 6213937B2 JP 2016513627 A JP2016513627 A JP 2016513627A JP 2016513627 A JP2016513627 A JP 2016513627A JP 6213937 B2 JP6213937 B2 JP 6213937B2
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- receiving device
- light receiving
- photoelectric conversion
- scanning circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 claims description 51
- 239000011347 resin Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 33
- 238000007789 sealing Methods 0.000 claims description 31
- 230000000694 effects Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Description
図1は第一の実施形態に係る受光デバイスの断面図(後述する図2の1−1線における断面図)である。この受光デバイスは、光電変換部101と、走査回路部102と、マイクロバンプ106とを有し、光電変換部101と走査回路部102とがマイクロバンプ106を介して積層されている、すなわち、この受光デバイスはいわゆる積層型のデバイスである。
図4は第一の実施形態の変形例に係る受光デバイスの断面図である。フィレットを形成する封止樹脂109の代わりに、フォトダイオード104の上面に対応する位置に開口部があり光電変換部101を包む容器120の側面上に、透明導電膜103が形成される。透明導電膜103は走査回路部102周囲の電極パッド110と接続されている。なお、容器120は走査回路部102の上に設けられており、容器120の側面はフォトダイオード104の上面に対し勾配、特に45°以下の勾配を有している。
図5は第二の実施形態に係る受光デバイスの断面図である。
図7は第三の実施形態に係る受光デバイスの断面図である。
102 走査回路部
103 透明導電膜
104 フォトダイオード
105 第1の画素電極
106 マイクロバンプ
107 第2の画素電極
108 走査回路
109 封止樹脂
110 電極パッド
111 シリコン基板
112 シリコン酸化膜
113 透光性基板
114 ハウジング
Claims (8)
- フォトダイオード及び当該フォトダイオードの下面に設けられた画素電極を有する光電変換部と、
前記画素電極と接続された走査回路部と、
前記走査回路部の周辺部に設置された電極パッドと、
前記フォトダイオードの上面から前記電極パッドに亘って形成され、かつ、前記フォトダイオードと前記電極パッドとの間において前記フォトダイオードの上面に対して勾配を持つ透明導電膜を備え、
前記光電変換部と前記走査回路部との隙間及び前記光電変換部の周囲の前記透明導電膜の下部に充填された封止樹脂を備えている、
受光デバイス。 - 前記勾配の角度が45°以下である、
請求項1に記載の受光デバイス。 - 前記走査回路部は、容器を有し、
前記容器は、前記光電変換部の周囲に、前記フォトダイオードの上面に対して勾配を持つ側面を有し、
前記透明導電膜は、前記容器の側面に形成されている、
請求項1または2に記載の受光デバイス。 - 前記画素電極と前記走査回路部とはマイクロバンプによって接続されている、
請求項1から3のいずれか1項に記載の受光デバイス。 - 前記封止樹脂が前記フォトダイオードの上面エッジまで到達している、
請求項4に記載の受光デバイス。 - 前記封止樹脂が前記フォトダイオードの上面の一部を覆っている、
請求項4に記載の受光デバイス。 - 前記フォトダイオードの上面部の一部を覆っている封止樹脂が前記フォトダイオードの遮光効果を持つ、
請求項6に記載の受光デバイス。 - 前記フォトダイオード内で電荷増倍作用が生じる強さの電圧を前記フォトダイオードに印加する手段をさらに備える、
請求項1から7のいずれか1項に記載の受光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014086009 | 2014-04-18 | ||
JP2014086009 | 2014-04-18 | ||
PCT/JP2015/001975 WO2015159512A1 (ja) | 2014-04-18 | 2015-04-08 | 受光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015159512A1 JPWO2015159512A1 (ja) | 2017-04-13 |
JP6213937B2 true JP6213937B2 (ja) | 2017-10-18 |
Family
ID=54323737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016513627A Active JP6213937B2 (ja) | 2014-04-18 | 2015-04-08 | 受光デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US10090350B2 (ja) |
JP (1) | JP6213937B2 (ja) |
WO (1) | WO2015159512A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6384879B2 (ja) * | 2015-01-23 | 2018-09-05 | オリンパス株式会社 | 撮像装置、および内視鏡 |
CN117253884A (zh) | 2017-10-06 | 2023-12-19 | 浜松光子学株式会社 | 光检测装置 |
JP2021027277A (ja) * | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61280659A (ja) * | 1985-06-06 | 1986-12-11 | Nec Corp | 密着形イメ−ジセンサ− |
US5515411A (en) | 1993-03-31 | 1996-05-07 | Shimadzu Corporation | X-ray image pickup tube |
JPH0763859A (ja) * | 1993-08-27 | 1995-03-10 | Shimadzu Corp | 放射線2次元検出器 |
JPH07192663A (ja) | 1993-12-27 | 1995-07-28 | Hitachi Ltd | 撮像装置 |
JPH08204166A (ja) * | 1995-01-23 | 1996-08-09 | Nippon Hoso Kyokai <Nhk> | 積層型固体撮像装置 |
JP2000241556A (ja) * | 1999-02-25 | 2000-09-08 | Toshiba Corp | X線平面検出器 |
FR2844635B1 (fr) | 2002-09-16 | 2005-08-19 | Commissariat Energie Atomique | Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes |
JP2006049512A (ja) * | 2004-08-03 | 2006-02-16 | Ngk Insulators Ltd | 光デバイス |
US7791016B2 (en) * | 2007-10-29 | 2010-09-07 | Hamamatsu Photonics K.K. | Photodetector |
JP5001788B2 (ja) * | 2007-10-29 | 2012-08-15 | 浜松ホトニクス株式会社 | 光検出装置 |
EP2352200B1 (en) * | 2008-10-30 | 2017-04-19 | Fujikura, Ltd. | Photoelectric conversion device |
JP2011071481A (ja) | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡 |
JP2011071482A (ja) | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡 |
JP5637751B2 (ja) * | 2009-08-28 | 2014-12-10 | 富士フイルム株式会社 | 固体撮像装置,固体撮像装置の製造方法 |
-
2015
- 2015-04-08 JP JP2016513627A patent/JP6213937B2/ja active Active
- 2015-04-08 WO PCT/JP2015/001975 patent/WO2015159512A1/ja active Application Filing
-
2016
- 2016-10-13 US US15/292,512 patent/US10090350B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2015159512A1 (ja) | 2017-04-13 |
US10090350B2 (en) | 2018-10-02 |
US20170033142A1 (en) | 2017-02-02 |
WO2015159512A1 (ja) | 2015-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11482564B2 (en) | Image sensing apparatus | |
KR102483548B1 (ko) | 이미지 센싱 장치 | |
KR102204728B1 (ko) | Spad 이미지 센서 및 연관 제조 방법 | |
KR102075809B1 (ko) | 광전 변환 소자, 광전 변환 소자의 제조 방법, 고체 촬상 장치 및 전자 기기 | |
US20130320194A1 (en) | Image Sensors with a High Fill-Factor | |
US7875949B2 (en) | Image sensor device with submicron structure | |
US11302735B2 (en) | Image sensor including transparent electrodes | |
CN105470272B (zh) | 图像传感器及包括该图像传感器的电子装置 | |
JP6213937B2 (ja) | 受光デバイス | |
US20210005656A1 (en) | Imaging element and method of manufacturing imaging element | |
US9871079B2 (en) | Image sensor and electronic device including the same | |
JP2010267736A (ja) | 固体撮像素子 | |
KR20210129856A (ko) | 이미지 센서 및 그 제조 방법 | |
Lee et al. | SNR Performance Comparison of 1.4 um Pixel: FSI, Light-guide, and BSI | |
KR101941426B1 (ko) | 이미지센서 및 그 제조방법 | |
JP2021129109A (ja) | システム及び方法 | |
CN106206634A (zh) | 一种图像传感器结构及其制作方法 | |
US20150014806A1 (en) | Image Sensor and Manufacturing Method Thereof | |
US9769398B2 (en) | Image sensor with large-area global shutter contact | |
WO2015125443A1 (ja) | 受光デバイスおよびその製造方法 | |
US20080277754A1 (en) | Image sensor and fabrication method thereof | |
JP2016048726A (ja) | 固体撮像素子 | |
KR100924412B1 (ko) | 이미지 센서 및 그 제조방법 | |
KR20220029072A (ko) | 이미지 센서 및 그 제조 방법 | |
KR20160111671A (ko) | 이미지센서 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170531 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170911 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6213937 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
SZ03 | Written request for cancellation of trust registration |
Free format text: JAPANESE INTERMEDIATE CODE: R313Z03 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |