CN101996962A - 电子部件模块以及无线通信设备 - Google Patents

电子部件模块以及无线通信设备 Download PDF

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CN101996962A
CN101996962A CN2010102839198A CN201010283919A CN101996962A CN 101996962 A CN101996962 A CN 101996962A CN 2010102839198 A CN2010102839198 A CN 2010102839198A CN 201010283919 A CN201010283919 A CN 201010283919A CN 101996962 A CN101996962 A CN 101996962A
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circuit board
electronic component
component module
sealing resin
resin layer
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CN101996962B (zh
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畠中英文
谷口智彦
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Kyocera Corp
Kyocera Kinseki Hertz Corp
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Abstract

一种电子部件模块，在布线基板(1)上搭载具有振荡电路以及放大电路的IC元件(2)，并且，通过在IC元件(2)上面具有窗部(4a)的密封树脂层(4)来被覆IC元件(2)，从其上开始使屏蔽层(5)覆盖密封树脂层(4)以及窗部(4a)。通过简单的结构，可降低电磁波向IC元件(2)的侵入，从而可使来自IC元件(2)的发送信号稳定。

Description

电子部件模块以及无线通信设备
本申请是申请号为200580036502.9(申请日2005.10.28)的同名申请的分案申请。
技术领域
本发明涉及在无线通信等中使用的电子部件模块以及使用了该模块的无线通信设备。
背景技术
以往使用了一种在无线通信等中应用的、输出发送用信号的电子部件模块。
作为该以往的电子部件模块，例如公知有如下结构：在布线基板上搭载倒装片(flip chip)安装型的IC元件，并且形成从其上面被覆IC元件的密封树脂层(参照专利文献1)。
所述电子部件模块具有振荡电路以及放大电路，通过振荡电路对基准信号进行振荡，将数据信号与该基准信号混合，并通过放大电路对其进行放大，从而输出发送用的信号。而且，通过将天线以及收发电路等与这样的电子部件模块连接，可构成能够搭载于个人计算机或便携信息设备等的小型无线通信设备。
专利文献1：特开2000-243882号公报
但是，在将以往的电子部件模块组装到例如无线通信设备中时，从组装于无线通信设备内部的其他高频部件泄漏的电磁波容易侵入到电子部件模块的振荡电路与放大电路中，成为噪声，因此，电子部件模块会频繁发生不能正常发挥功能的状态。
即，在以往的电子部件模块中，覆盖搭载于布线基板上的IC元件的密封树脂层使电磁波通过，所以，在IC元件内，不需要的电磁波容易侵入到振荡电路与放大电路中，具有电子部件模块的动作不稳定的缺点。
发明内容
本发明鉴于上述缺点而提出，其目的在于，在布线基板上搭载了IC元件的电子部件模块中，提供一种以简单的结构降低不需要的电磁波的侵入、能够稳定工作的电子部件模块以及使用了该电子部件模块的无线通信设备。
本发明的电子部件模块具有：布线基板；搭载于所述布线基板上的电子部件；被覆所述IC元件及所述电子部件的密封树脂层；覆盖所述密封树脂层的表面的屏蔽层，所述密封树脂层的位于所述IC元件上的部分的厚度小于所述密封树脂层的位于所述电子部件上的部分的厚度。
本发明的特征以及效果，可参照附图并基于下述的实施方式的说明而明确。
附图说明
图1是本发明一个实施方式的电子部件模块的概观立体图。
图2是表示省略了该电子部件模块的屏蔽层5以及密封树脂层4的外观立体图。
图3是电子部件模块的剖视图。
图4(a)～(e)是说明电子部件模块的制造工序的图。
图中：1-布线基板，2-IC元件，3-片式电子部件，4-密封树脂层，4a-窗部，5-屏蔽层，7-遮蔽用导体图案，8-滤波元件，9-切口，10-母布线基板，41-第一切割刀具，42-第二切割刀具。
具体实施方式
下面，参照附图，对本发明的电子部件模块进行详细说明。其中，在本实施方式中，对作为蓝牙等通信模块的电子部件模块进行说明。
图1和图2是本发明一个实施方式的电子部件模块的概观立体图。图3是该电子部件模块的剖视图。
电子部件模块具有下述结构：搭载于布线基板1上的IC元件2被密封树脂层4被覆。在密封树脂层4的表面被覆有屏蔽层5。
另外，图2表示省略了屏蔽层5以及密封树脂层4的情况。
布线基板1例如是在由玻璃-陶瓷、氧化铝陶瓷等陶瓷材料构成的绝缘层多层层叠而形成的层叠体的内部及表面，形成有以Ag、Cu、W以及Mo等金属材料为主要成分的电路布线和连接焊盘的基板。
而且，如图3所示，在布线基板1的内部形成有由LC谐振电路等构成的滤波元件8。滤波元件8具备下述功能：根据输入输出于IC元件2的信号，选择规定频带的数据信号。
并且，在布线基板1的内部，遮蔽用导体图案7介于滤波元件8和IC元件2之间，用于提高IC元件2与滤波元件8之间的绝缘性。
另外，在布线基板1由玻璃-陶瓷构成的情况下，其通过下述工序制作而成：在规定的玻璃-陶瓷材料粉末中添加/混合适当的有机溶剂而得到的陶瓷生料薄板的表面等，通过众所周知的丝网印刷法等涂敷成为电路布线和连接焊盘的导体膏，并且，在层叠了多层该膏且实施了加压成型之后，以高温进行煅烧。
搭载于所述布线基板1上的IC元件2例如是如下元件：在Si或GaAs等半导体元件基板形成Al等的电路布线，来构成振荡电路以及放大电路，并将整体树脂模制成长方体。
将形成了该电路布线的面设作下面，基于形成在该下面的多个电极焊盘、和形成在布线基板1上的多个连接焊盘而对应的部件之间，通过导电性接合材料2a而电气/机械接合。这样，将IC元件2倒装片安装在布线基板1上。
在形成于IC元件2的下面的多个电极焊盘中，包括基准电位用的电极焊盘，该基准电位用的电极焊盘与形成在布线基板上的基准电位用的连接焊盘接合。由此，IC元件2的基板电位与基准电位近似相等。
这里的“基准电位”是指：为了得到用于驱动IC元件2的电源电压而成为基准的低电位的电位，本实施方式中，例如设定为接地电位(0V左右)。
而且，在所述布线基板1上除了IC元件2之外，还搭载有片式电容器、片式电感器以及二级管等片式电子部件3，这些电子部件3与IC元件2电连接，构成振荡电路等规定的电路。
在布线基板1的上面形成的密封树脂层4例如采用环氧等树脂材料。密封树脂层4具有下述结构：按照使IC元件2的上面的至少一部分露出的方式，例如以具有圆形的窗部4a的形式被覆IC元件2，并且被覆片式电子部件3。
并且，被覆于密封树脂层4的表面的屏蔽层5，例如是在所述环氧等树脂材料中分散有Ag、Cu、Pd、Al、Ni、Fe等金属粉末的层。金属粉末的含有量相对于含有金属粉末的树脂材料整体为50～90重量％，更优选为60～80重量％。
这样，通过在树脂材料中分散金属粉末，使得屏蔽层5具有遮蔽电磁波的功能。同时，也实现了屏蔽层5的导热性的提高。
屏蔽层5形成为被覆密封树脂层4的整个面，并且被覆从设置于密封树脂层4的窗部4a露出的IC元件2的上面。这样，通过使IC元件2与屏蔽层5接触，屏蔽层5被保持在与IC元件2的基板电位大致相同的电位，从而可抑制IC元件2的基板电位的变动。另外，通过在密封树脂层4以及IC元件2的上面侧设置了屏蔽层5，使得电磁波难以侵入IC元件2内部的构成振荡电路与放大电路的电路布线，能够使电子部件模块的动作稳定化。
如果将先前所述的与IC元件2的基准电位用的电极焊盘电连接的导体图案引出到IC元件2上面，并使屏蔽层5和保持在与基准电位相同电位的导体图案直接接触，则可以更加有效地防止不需要的电磁波从外部侵入到IC元件2的内部。
并且，在IC元件2上的密封树脂层4中具有窗部4a，通过使从该窗部4a露出的IC元件2的上面与屏蔽层5接触，可使得IC元件2的外面整体被保持在基准电位，所以，能够使电子部件模块更稳定地动作。
另外，由于保持在基准电位的区域面积扩大至IC元件2的整个外面，因此使得由在IC元件2的内部形成的电路例如放大电路产生的热经由屏蔽层5向外部高效散热，由此易于从IC元件2的上面向布线基板1传导，所以，还具有IC元件2的动作稳定的优点。
并且，在本电子部件模块的结构中，使屏蔽层5的外周部沿着密封树脂层4的侧面延伸至IC元件2的下方，并使该延伸部6被覆于布线基板1的表面。由此，IC元件2整体被屏蔽层5覆盖，所以，可进一步降低电磁波向IC元件2内的侵入。另外，由于从IC元件2产生的热经由屏蔽层5向布线基板1侧传导，所以，防止IC元件2中过度蓄积热量，使得IC元件2的动作更稳定化。
在本实施方式中，如图3所示，在布线基板1上面的整个外周部形成有切口9，屏蔽层5的延伸部6被覆于和切口9对面的布线基板1的表面。
基于这样的结构，屏蔽层5与布线基板1的接合被强化，能够更加可靠地使屏蔽层5被覆于布线基板1，而在屏蔽层5与布线基板1的接合部几乎不形成间隙。
并且，通过屏蔽层5的延伸部6以环状被覆密封树脂层4以及布线基板1的界面外周。根据该结构，由于从外部侵入屏蔽层5的电磁波在布线基板1的外周被有效分散而流失，所以，可进一步降低电磁波向IC元件2内的侵入。
而且，屏蔽层5的延伸部6形成为：其下端6a的位置比设置在布线基板1内的遮蔽用导体图案7的高度位置低。换而言之，遮蔽用导体图案7配置在比屏蔽层5的延伸部6的下端6a高的位置。由此，可有效降低来自横向的电磁波向IC元件2内侵入，从而能够使电子部件模块的动作更加稳定化。
另外，也可以在布线基板1的侧面侧使遮蔽用导体图案7露出，连接遮蔽用导体图案7的露出部和屏蔽层5的延伸部6。
而且，如上所述，在布线基板1中如图3所示，内置有包括LC谐振电路的滤波元件8，并且在位于滤波元件8和IC元件2之间的布线基板1内，夹设保持在基准电位的遮蔽用导体图案7。由此，可抑制会在滤波元件8和IC元件2之间产生的电磁干扰。由于该滤波元件8在布线基板1的内部形成了LC谐振电路，而无需在布线基板上设置片式电感器与片式电容器等片式部件，所以，可使电子部件模块的整体结构小型化。
这样一来，所述本发明的电子部件模块，通过在对IC元件2进行被覆的密封树脂4的整个表面内覆盖屏蔽层5，不仅抑制了IC元件2的基板电位的变动，而且，防止不需要的电磁波进入IC元件2内的构成振荡电路与放大电路等的电路布线，作为动作非常稳定的通信模块发挥功能。
下面，利用图4(a)～图4(e)对本实施方式的电子部件模块的制造方法进行说明。
首先，如图4(a)所示，准备多个布线基板区域排列成矩阵状的母布线基板10，在该母布线基板10上面的各布线基板区域中，在规定位置搭载倒装片安装型的IC元件2以及片式电子部件3。准备多个排列为矩阵状的母布线基板10。另外，虽然没有图示，但在母布线基板10的内部的各布线基板区域形成有滤波元件8和遮蔽用导体图案7。
此时，IC元件2、片式电子部件3以及设置于母布线基板10的电路布线等分别电连接，构成规定的振荡电路以及放大电路。
接着，如图4(b)所示，利用环氧等液状树脂，在母布线基板10上通过丝网印刷等，按照在IC元件2的上面形成窗部4a的方式进行涂敷并使其热硬化，来形成密封树脂层4。在窗部4a处未形成密封树脂层4。
然后，如图4(c)所示，沿着与各个布线基板对应的区域的边界，利用第一切割刀具41切断密封树脂层4。由此，在与布线基板对应的区域的边界部形成跨过边界的槽43。此时，优选切割刀具41对密封树脂层4和母布线基板10的表层部分进行切削，使得槽43的下端位于仅比母布线基板10的上面稍稍靠下的位置。由此，在利用后述的第二切割刀具42切断母布线基板10时，可以同时形成切口9。仅削除上部。母布线基板10具有不易因外力而分裂的足够的强度。
接着，如图4(d)所示，通过丝网印刷法等对环氧等液状树脂中分散有Ag粉末等金属粉末的导电树脂墨进行涂敷，以覆盖密封树脂层4的表面以及从窗部4a露出的IC元件2的上面。此时，导电性墨也被填充在槽43内。在如此涂敷了导电性墨之后，使其热硬化。
然后，如图4(e)所示，利用宽度比所述第一切割刀具41窄的第二切割刀具42，沿着与各个布线基板1对应的区域的边界切断/分割母布线基板10。此时，通过切断填充于槽43内的硬化后的导电性墨，形成了屏蔽层5的延伸部6。
经过上述工序，制作完成了上述本发明的电子部件模块。
根据上述的制造方法，通过在具有多个基板区域的母布线基板10上涂敷并固化导电性墨而形成了屏蔽层5，所以，可以对多个基板区域以简单的方法统一形成屏蔽层5。由此，能够飞跃提高具有电磁波遮蔽功能的电子部件模块的生产率。在以往的电子部件模块中，为了遮蔽来自外部的不需要的电磁波，安装了金属制的屏蔽罩，但该情况下，不仅需要屏蔽罩的对位工序、焊接工序等非常烦杂的作业，而且需要针对多个基板区域逐个进行这些作业，因此存在着生产率低的问题。与之相对，根据本实施方式的制造方法，由于完全不需要屏蔽罩的对位工序、焊接工序等烦杂的作业，所以，可提供一种具有电磁波遮蔽功能且提高了生产率的电子部件模块。
通过将所述本发明的电子部件模块、与该电子部件模块连接的天线以及收发电路进行组合，可构成无线通信设备。
根据这样的无线通信设备，在电子部件模块与一同组装到无线通信设备内的其他高频部件之间，不必一定采用用于抑制从各部件泄漏的电磁波的影响的结构，例如使电子部件模块与其他的高频部件充分远离地配置、或对电子部件模块安装金属制屏蔽罩等的结构。
因此，无线通信设备的结构简单，能够实现小型且通信特性出色的无线通信设备。
另外，本发明不限定于所述实施方式，在不脱离本发明主旨的范围中能够实施各种变更、改良。
例如，上述实施方式中，在密封树脂层4上形成了窗部4a，但该窗部4a不限定于使IC元件2上面的一部分露出。例如，也可以使IC元件2的整个上面露出。
而且，在上述实施方式中，利用含有金属粉末的树脂材料形成了屏蔽层5，但也可取代该材料，而利用由Au、Ag、Cu等构成的金属薄膜形成。当利用金属薄膜形成屏蔽层5时，由于屏蔽层的厚度可形成得薄，所以，可进一步使电子部件模块小尺寸、小型化。作为形成方法，采用了对液状树脂中分散有金属粉末的导电树脂墨进行涂敷并使其热硬化的方法，但也可以取代该方法，例如通过溅射等蒸镀法对金属进行处理来形成该金属薄膜。
并且，在上述实施方式中，按照被覆密封树脂层4的上面以及侧面的方式形成了屏蔽层5，但也可以按照仅被覆密封树脂层4的上面的方式形成屏蔽层5。
另外，在上述实施方式中，在布线基板1形成了切口9，但本发明也能够应用在未形成切口9的布线基板1。
此外，在所述实施方式中，作为电子部件模块举例说明了通信模块，但本发明也可以应用于通信模块之外的电子部件模块，例如汽车用电子部件等。

Claims (8)

1.一种电子部件模块，具有：
布线基板；
搭载于所述布线基板上的IC元件；
搭载于所述布线基板上的电子部件；
被覆所述IC元件及所述电子部件的密封树脂层；
覆盖所述密封树脂层的表面的屏蔽层，
所述密封树脂层的位于所述IC元件上的部分的厚度小于所述密封树脂层的位于所述电子部件上的部分的厚度。
2.根据权利要求1所述的电子部件模块，其特征在于，
所述屏蔽层的外周部具有延伸部，其沿着所述密封树脂层的侧面延伸至所述布线基板，该延伸部覆盖所述布线基板的上面及/或侧面。
3.根据权利要求2所述的电子部件模块，其特征在于，
在所述布线基板的整个外周部形成有切口，所述屏蔽层的延伸部覆盖该切口。
4.根据权利要求2所述的电子部件模块，其特征在于，
所述密封树脂层的外周、以及所述布线基板的安装有所述IC元件的面的外周，由所述屏蔽层的延伸部以环状被覆。
5.根据权利要求1所述的电子部件模块，其特征在于，
在所述布线基板中内置有滤波元件，其包括LC谐振电路，
在位于该滤波元件和所述IC元件之间的所述布线基板内，夹设有遮蔽用导体图案。
6.根据权利要求5所述的电子部件模块，其特征在于，
所述屏蔽层的外周部具有延伸部，其沿着所述密封树脂层的侧面延伸至所述布线基板的上面的下方，所述延伸部的下端配置在其高度与所述遮蔽用导体图案相等或在其以下的高度位置。
7.根据权利要求1所述的电子部件模块，
所述密封树脂层在位于所述IC元件的上面的部分的一部分具有使所述IC元件露出的窗部，所述屏蔽层在该窗部覆盖所述IC元件。
8.一种无线通信设备，包括权利要求1～7中任一项所述的电子部件模块、和与该电子部件模块连接的天线以及收发电路。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105120645A (zh) * 2015-08-31 2015-12-02 芜湖宏景电子股份有限公司 一种汽车音响的屏蔽罩结构

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8062930B1 (en) 2005-08-08 2011-11-22 Rf Micro Devices, Inc. Sub-module conformal electromagnetic interference shield
US8053872B1 (en) * 2007-06-25 2011-11-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8186048B2 (en) * 2007-06-27 2012-05-29 Rf Micro Devices, Inc. Conformal shielding process using process gases
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
KR100737098B1 (ko) * 2006-03-16 2007-07-06 엘지이노텍 주식회사 전자파 차폐장치 및 그 제조 공정
JP5022652B2 (ja) * 2006-08-07 2012-09-12 太陽誘電株式会社 回路モジュールの製造方法及び回路モジュール
JP5009576B2 (ja) * 2006-09-19 2012-08-22 新光電気工業株式会社 半導体装置の製造方法
TWM324375U (en) * 2007-05-21 2007-12-21 Universal Scient Ind Co Ltd Stacked packaging structure for communication module
JP2009016371A (ja) * 2007-06-29 2009-01-22 Casio Comput Co Ltd シールド機能付きモジュールの製造方法
JP2009016715A (ja) * 2007-07-09 2009-01-22 Tatsuta System Electronics Kk シールド及び放熱性を有する高周波モジュール及びその製造方法
KR101011199B1 (ko) * 2007-11-01 2011-01-26 파나소닉 주식회사 실장 구조체
US7633015B2 (en) * 2008-03-31 2009-12-15 Apple Inc. Conforming, electro-magnetic interference reducing cover for circuit components
JP5446454B2 (ja) * 2008-05-23 2014-03-19 株式会社デンソー 半導体装置の実装構造
JP5094622B2 (ja) * 2008-08-04 2012-12-12 太陽誘電株式会社 回路モジュール及び回路モジュールの製造方法
TW201013881A (en) * 2008-09-10 2010-04-01 Renesas Tech Corp Semiconductor device and method for manufacturing same
JP5359146B2 (ja) * 2008-09-19 2013-12-04 株式会社ジェイテクト 多層回路基板
US8110441B2 (en) * 2008-09-25 2012-02-07 Stats Chippac, Ltd. Method of electrically connecting a shielding layer to ground through a conductive via disposed in peripheral region around semiconductor die
JP2010192653A (ja) * 2009-02-18 2010-09-02 Panasonic Corp 半導体装置
TW201032389A (en) * 2009-02-20 2010-09-01 Aiconn Technology Corp Wireless transceiver module
CN102576694A (zh) * 2009-11-10 2012-07-11 罗姆股份有限公司 半导体装置及半导体装置的制造方法
US8319318B2 (en) * 2010-04-06 2012-11-27 Intel Corporation Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages
US9386734B2 (en) 2010-08-05 2016-07-05 Epcos Ag Method for producing a plurality of electronic devices
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
US8654537B2 (en) * 2010-12-01 2014-02-18 Apple Inc. Printed circuit board with integral radio-frequency shields
JP5573645B2 (ja) 2010-12-15 2014-08-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
CN103025137A (zh) * 2011-09-26 2013-04-03 新科实业有限公司 电子部件模块及其制造方法
JP2012015548A (ja) * 2011-10-04 2012-01-19 Tatsuta Electric Wire & Cable Co Ltd シールド及び放熱性を有する高周波モジュール及びその製造方法
JP5919860B2 (ja) * 2012-02-10 2016-05-18 株式会社村田製作所 電子部品モジュール及び該電子部品モジュールの製造方法
US9484313B2 (en) 2013-02-27 2016-11-01 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal-enhanced conformal shielding and related methods
KR20140139831A (ko) * 2013-05-28 2014-12-08 삼성전기주식회사 무선 통신 장치
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
KR20150002200A (ko) * 2013-06-28 2015-01-07 삼성전기주식회사 프론트엔드 모듈 및 그를 이용한 무선 통신 장치
CN103928409B (zh) * 2014-03-17 2017-01-04 江苏省宜兴电子器件总厂 一种集成电路倒扣焊气密性封装结构
WO2015194435A1 (ja) * 2014-06-20 2015-12-23 株式会社村田製作所 回路モジュール及びその製造方法
WO2016092691A1 (ja) * 2014-12-12 2016-06-16 株式会社メイコー モールド回路モジュール及びその製造方法
KR102117477B1 (ko) * 2015-04-23 2020-06-01 삼성전기주식회사 반도체 패키지 및 반도체 패키지의 제조방법
JP6787406B2 (ja) 2016-03-21 2020-11-18 株式会社村田製作所 パッケージ回路システム構造体
US10097030B2 (en) * 2016-04-29 2018-10-09 Taiwan Semiconductor Manufacturing Co., Ltd Packaged semiconductor devices with wireless charging means
JP6707419B2 (ja) * 2016-08-08 2020-06-10 アルプスアルパイン株式会社 回路モジュール及び回路モジュールの製造方法
US10068854B2 (en) * 2016-10-24 2018-09-04 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
JP6463323B2 (ja) * 2016-12-01 2019-01-30 太陽誘電株式会社 無線モジュール、およびその製造方法
JP6408540B2 (ja) * 2016-12-01 2018-10-17 太陽誘電株式会社 無線モジュール及び無線モジュールの製造方法
CN110959189A (zh) 2017-08-01 2020-04-03 株式会社村田制作所 高频模块
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules
CN116157879A (zh) * 2020-10-29 2023-05-23 株式会社村田制作所 高频模块以及通信装置
WO2022230681A1 (ja) * 2021-04-26 2022-11-03 株式会社村田製作所 高周波モジュール及び通信装置
JP2022185903A (ja) * 2021-06-03 2022-12-15 株式会社村田製作所 高周波モジュール及び通信装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140709A (ja) * 1987-11-27 1989-06-01 Seiko Electronic Components Ltd 電気二重層キャパシタ
JPH05167302A (ja) * 1991-12-18 1993-07-02 Hitachi Ltd 高周波電力増幅回路装置およびそれを含む高周波モジュール
DE69327192T2 (de) * 1992-05-11 2000-04-27 Fuji Photo Film Co Ltd Geformte Gegenstände für lichtempfindliche photographische Materialien
JPH06268532A (ja) * 1993-03-12 1994-09-22 Tdk Corp Ｍｍｉｃパッケージ
US5639989A (en) * 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
JPH07307416A (ja) * 1994-05-12 1995-11-21 Toshiba Corp 半導体チップの実装方法及び半導体デバイス
JP2565300B2 (ja) * 1994-05-31 1996-12-18 日本電気株式会社 半導体装置
US5777847A (en) * 1995-09-27 1998-07-07 Nec Corporation Multichip module having a cover wtih support pillar
JP3513333B2 (ja) * 1995-09-29 2004-03-31 キヤノン株式会社 多層プリント配線板およびそれを実装する電子機器
US6795120B2 (en) * 1996-05-17 2004-09-21 Sony Corporation Solid-state imaging apparatus and camera using the same
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
JPH1140709A (ja) * 1997-07-18 1999-02-12 Nec Eng Ltd 半導体実装構造およびその製造方法
JP3462979B2 (ja) * 1997-12-01 2003-11-05 株式会社東芝 半導体装置
US6409859B1 (en) * 1998-06-30 2002-06-25 Amerasia International Technology, Inc. Method of making a laminated adhesive lid, as for an Electronic device
US5977626A (en) * 1998-08-12 1999-11-02 Industrial Technology Research Institute Thermally and electrically enhanced PBGA package
JP2000243882A (ja) 1999-02-24 2000-09-08 Kyocera Corp 半導体装置およびその製造方法
US6731184B1 (en) * 1999-07-29 2004-05-04 Murata Manufacturing Co., Ltd. High frequency switching component
US6384473B1 (en) * 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP4286533B2 (ja) * 2000-06-26 2009-07-01 パナソニック株式会社 ３周波分波回路
US6407334B1 (en) * 2000-11-30 2002-06-18 International Business Machines Corporation I/C chip assembly
US6653730B2 (en) * 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface
US6586786B2 (en) * 2000-12-27 2003-07-01 Matsushita Electric Industrial Co., Ltd. High frequency switch and mobile communication equipment
US20020096767A1 (en) * 2001-01-25 2002-07-25 Cote Kevin J. Cavity down ball grid array package with EMI shielding and reduced thermal resistance
FR2824953B1 (fr) * 2001-05-18 2004-07-16 St Microelectronics Sa Boitier semi-conducteur optique a lentille incorporee et blindage
DE10136743B4 (de) * 2001-07-27 2013-02-14 Epcos Ag Verfahren zur hermetischen Verkapselung eines Bauelementes
CN1254925C (zh) * 2001-09-27 2006-05-03 株式会社东芝 便携式无线电设备
TW586208B (en) * 2002-02-26 2004-05-01 Advanced Semiconductor Eng Wafer-level packaging structure
EP1357606A1 (en) * 2002-04-22 2003-10-29 Scientek Corporation Image sensor semiconductor package
US7161252B2 (en) * 2002-07-19 2007-01-09 Matsushita Electric Industrial Co., Ltd. Module component
JP4357817B2 (ja) * 2002-09-12 2009-11-04 パナソニック株式会社 回路部品内蔵モジュール
CA2409912C (en) * 2002-10-25 2008-04-01 Ibm Canada Limited-Ibm Canada Limitee Improvements in grounding and thermal dissipation for integrated circuit packages
JP4662324B2 (ja) * 2002-11-18 2011-03-30 太陽誘電株式会社 回路モジュール
TWI235469B (en) * 2003-02-07 2005-07-01 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package with EMI shielding
JP2005116762A (ja) * 2003-10-07 2005-04-28 Fujitsu Ltd 半導体装置の保護方法及び半導体装置用カバー及び半導体装置ユニット及び半導体装置の梱包構造
WO2005059995A2 (en) * 2003-12-18 2005-06-30 Rf Module And Optical Design Limited Semiconductor package with integrated heatsink and electromagnetic shield
DE202004005010U1 (de) * 2004-03-30 2004-06-17 Aea Technology Qsa Gmbh Verpackung für radioaktive Materialien

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105120645A (zh) * 2015-08-31 2015-12-02 芜湖宏景电子股份有限公司 一种汽车音响的屏蔽罩结构
CN105120645B (zh) * 2015-08-31 2019-04-09 芜湖宏景电子股份有限公司 一种汽车音响的屏蔽罩结构

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