CN101789392B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101789392B CN101789392B CN201010002041.6A CN201010002041A CN101789392B CN 101789392 B CN101789392 B CN 101789392B CN 201010002041 A CN201010002041 A CN 201010002041A CN 101789392 B CN101789392 B CN 101789392B
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- dicing blade
- semiconductor
- semiconductor wafer
- layer
- blade
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410104152.6A CN103871993B (zh) | 2009-01-22 | 2010-01-07 | 半导体器件及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009011570A JP5395446B2 (ja) | 2009-01-22 | 2009-01-22 | 半導体装置および半導体装置の製造方法 |
JP2009-011570 | 2009-01-22 |
Related Child Applications (1)
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CN201410104152.6A Division CN103871993B (zh) | 2009-01-22 | 2010-01-07 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101789392A CN101789392A (zh) | 2010-07-28 |
CN101789392B true CN101789392B (zh) | 2014-04-02 |
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Application Number | Title | Priority Date | Filing Date |
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CN201410104152.6A Expired - Fee Related CN103871993B (zh) | 2009-01-22 | 2010-01-07 | 半导体器件及其制造方法 |
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CN101005021A (zh) * | 2006-01-20 | 2007-07-25 | 株式会社瑞萨科技 | 半导体器件的制造方法 |
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US20100181681A1 (en) | 2010-07-22 |
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CN101789392A (zh) | 2010-07-28 |
CN103871993A (zh) | 2014-06-18 |
KR101665706B1 (ko) | 2016-10-12 |
KR101709042B1 (ko) | 2017-02-21 |
US20130062747A1 (en) | 2013-03-14 |
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HK1194861A1 (zh) | 2014-10-24 |
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