HK1194861A1 - 半導體器件及其製造方法 - Google Patents

半導體器件及其製造方法

Info

Publication number
HK1194861A1
HK1194861A1 HK14108103.1A HK14108103A HK1194861A1 HK 1194861 A1 HK1194861 A1 HK 1194861A1 HK 14108103 A HK14108103 A HK 14108103A HK 1194861 A1 HK1194861 A1 HK 1194861A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
HK14108103.1A
Other languages
English (en)
Inventor
秋葉俊彥
木村稔
小田切政雄
Original Assignee
瑞薩電子株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子株式會社 filed Critical 瑞薩電子株式會社
Publication of HK1194861A1 publication Critical patent/HK1194861A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
HK14108103.1A 2009-01-22 2014-08-07 半導體器件及其製造方法 HK1194861A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009011570A JP5395446B2 (ja) 2009-01-22 2009-01-22 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
HK1194861A1 true HK1194861A1 (zh) 2014-10-24

Family

ID=42336276

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14108103.1A HK1194861A1 (zh) 2009-01-22 2014-08-07 半導體器件及其製造方法

Country Status (5)

Country Link
US (2) US8298963B2 (zh)
JP (1) JP5395446B2 (zh)
KR (2) KR101665706B1 (zh)
CN (2) CN103871993B (zh)
HK (1) HK1194861A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11315971B2 (en) 2017-09-12 2022-04-26 Sony Semiconductor Solutions Corporation Imaging device, method of producing imaging device, imaging apparatus, and electronic apparatus

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482105B2 (en) * 2010-01-29 2013-07-09 Headway Technologies, Inc. Semiconductor substrate, laminated chip package, semiconductor plate and method of manufacturing the same
JP5740820B2 (ja) * 2010-03-02 2015-07-01 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5318055B2 (ja) 2010-09-22 2013-10-16 株式会社東芝 半導体装置、及び半導体装置の製造方法
JP2012256787A (ja) * 2011-06-10 2012-12-27 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2013069814A (ja) * 2011-09-21 2013-04-18 Renesas Electronics Corp 半導体装置の製造方法
SG10201913007VA (en) * 2011-10-06 2020-02-27 Heptagon Micro Optics Pte Ltd Method for wafer-level manufacturing of objects and corresponding semi-finished products
JP2013105919A (ja) * 2011-11-14 2013-05-30 Fujitsu Semiconductor Ltd 半導体ウェハ及び半導体装置の製造方法
US8653673B2 (en) 2011-12-20 2014-02-18 Raytheon Company Method for packaging semiconductors at a wafer level
TWI440412B (zh) * 2011-12-28 2014-06-01 Princo Corp 超薄多層基板之封裝方法
US9196532B2 (en) 2012-06-21 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods for forming the same
CN104380459B (zh) * 2012-07-19 2017-08-25 瑞萨电子株式会社 半导体装置
US8490038B1 (en) * 2012-08-27 2013-07-16 Cadence Dsign Systems, Inc. System and method for automatic placement of contact cuts and similar structures in integrated circuit layouts
JP2014082468A (ja) * 2012-09-25 2014-05-08 Canon Components Inc 基板部材及びチップの製造方法
JP6330143B2 (ja) * 2013-06-13 2018-05-30 パナソニックＩｐマネジメント株式会社 窒化物半導体結晶から形成されている平板の表面に溝を形成する方法
JP2015056605A (ja) * 2013-09-13 2015-03-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6185813B2 (ja) * 2013-09-30 2017-08-23 三星ダイヤモンド工業株式会社 イメージセンサ用ウエハ積層体の分断方法並びに分断装置
JP6180876B2 (ja) * 2013-10-02 2017-08-16 株式会社ディスコ 切削装置及びウエーハの切削方法
US9653417B2 (en) * 2013-11-07 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for singulating packaged integrated circuits and resulting structures
KR102171286B1 (ko) 2014-07-11 2020-10-29 삼성전자주식회사 반도체 패키지 및 그 제조방법
JP2016031986A (ja) * 2014-07-28 2016-03-07 株式会社ディスコ ウェーハの加工方法
JP6318046B2 (ja) * 2014-08-12 2018-04-25 株式会社ディスコ ウエーハの分割方法
US11069627B2 (en) * 2014-11-06 2021-07-20 Texas Instruments Incorporated Scribe seals and methods of making
JP6411249B2 (ja) * 2015-03-11 2018-10-24 新光電気工業株式会社 半導体装置
CN105304587A (zh) * 2015-11-20 2016-02-03 江阴长电先进封装有限公司 一种提高芯片可靠性的封装结构及其圆片级制作方法
US9922895B2 (en) * 2016-05-05 2018-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Package with tilted interface between device die and encapsulating material
JP2018019006A (ja) 2016-07-29 2018-02-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10535554B2 (en) * 2016-12-14 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor die having edge with multiple gradients and method for forming the same
KR101966780B1 (ko) * 2017-01-16 2019-04-08 (주)피케이시 척 테이블 고무패드 고속 가공기 및 그 가공방법
TWI610403B (zh) 2017-03-03 2018-01-01 矽品精密工業股份有限公司 基板結構及其製法與電子封裝件
CN107093579B (zh) * 2017-03-20 2020-09-11 通富微电子股份有限公司 半导体圆片级封装方法及封装用刀具
JP6974960B2 (ja) * 2017-04-21 2021-12-01 株式会社ディスコ 半導体パッケージの製造方法
JP6890893B2 (ja) * 2017-08-08 2021-06-18 株式会社ディスコ 金属が露出した基板の加工方法
CN109841594B (zh) * 2017-11-27 2021-04-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102497570B1 (ko) 2018-01-18 2023-02-10 삼성전자주식회사 반도체 장치
JP2019149472A (ja) * 2018-02-27 2019-09-05 株式会社東芝 半導体装置及びダイシング方法
KR102438682B1 (ko) * 2018-07-12 2022-08-31 삼성전자주식회사 커버 보호층을 가지는 반도체 칩
TWI820177B (zh) * 2018-09-26 2023-11-01 日商三星鑽石工業股份有限公司 附有金屬膜之基板的分割方法
US10957595B2 (en) * 2018-10-16 2021-03-23 Cerebras Systems Inc. Systems and methods for precision fabrication of an orifice within an integrated circuit
KR102557402B1 (ko) * 2018-10-19 2023-07-18 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10515853B1 (en) * 2018-12-10 2019-12-24 Winbond Electronics Corp. Method of wafer dicing
JP7254416B2 (ja) * 2019-01-11 2023-04-10 株式会社ディスコ 被加工物の切削方法
US11088094B2 (en) * 2019-05-31 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Air channel formation in packaging process
JP2021040097A (ja) * 2019-09-05 2021-03-11 株式会社ディスコ 被加工物の切削方法
JP2021041502A (ja) * 2019-09-12 2021-03-18 株式会社ディスコ 切削ブレード、切削ブレードの製造方法、及び、ウェーハの切削方法
US11735487B2 (en) * 2019-10-30 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating the same
CN113035823A (zh) * 2019-12-25 2021-06-25 台湾积体电路制造股份有限公司 封装结构
JP2021125564A (ja) * 2020-02-05 2021-08-30 キヤノン株式会社 撮像素子パッケージ
CN111584433B (zh) * 2020-06-08 2021-12-10 上海领矽半导体有限公司 一种保护环及其形成方法
JP2022024547A (ja) * 2020-07-28 2022-02-09 株式会社ソシオネクスト 半導体装置の製造方法、半導体パッケージ及び半導体パッケージの製造方法
CN113953689A (zh) * 2021-12-16 2022-01-21 湖北三维半导体集成创新中心有限责任公司 一种晶圆的切割方法
CN116913773B (zh) * 2023-09-12 2024-01-26 威海市泓淋电力技术股份有限公司 一种半导体芯片及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158129A (ja) * 1985-12-27 1987-07-14 Kyocera Corp ガラス切断用ホイ−ルカツタ
JP3521758B2 (ja) * 1997-10-28 2004-04-19 セイコーエプソン株式会社 半導体装置の製造方法
JPH11186440A (ja) * 1997-12-22 1999-07-09 Hitachi Ltd 半導体装置
JP2001250800A (ja) * 2000-03-06 2001-09-14 Seiko Epson Corp 半導体装置の製造方法、電気光学装置及び電気光学装置の製造方法
US20030148618A1 (en) * 2002-02-07 2003-08-07 Applied Materials, Inc. Selective metal passivated copper interconnect with zero etch stops
JP2004349275A (ja) * 2003-03-24 2004-12-09 Tokyo Seimitsu Co Ltd チップ製造方法
JP2005129743A (ja) * 2003-10-24 2005-05-19 Tokyo Seimitsu Co Ltd ダイシング方法
JP2005129742A (ja) * 2003-10-24 2005-05-19 Tokyo Seimitsu Co Ltd ダイシングブレード及びダイシング方法
JP4537702B2 (ja) * 2003-12-26 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI272683B (en) * 2004-05-24 2007-02-01 Sanyo Electric Co Semiconductor device and manufacturing method thereof
JP2006140276A (ja) * 2004-11-11 2006-06-01 Yamaha Corp 半導体ウェーハとそれを用いた半導体素子及びチップサイズ・パッケージ並びに半導体ウェーハの製造方法、半導体ウェーハの検査方法
JP2007194469A (ja) * 2006-01-20 2007-08-02 Renesas Technology Corp 半導体装置の製造方法
JP2008055519A (ja) 2006-08-29 2008-03-13 Sony Corp 複合素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11315971B2 (en) 2017-09-12 2022-04-26 Sony Semiconductor Solutions Corporation Imaging device, method of producing imaging device, imaging apparatus, and electronic apparatus

Also Published As

Publication number Publication date
US8791574B2 (en) 2014-07-29
KR20160052484A (ko) 2016-05-12
JP5395446B2 (ja) 2014-01-22
JP2010171156A (ja) 2010-08-05
CN101789392B (zh) 2014-04-02
US20100181681A1 (en) 2010-07-22
CN103871993B (zh) 2016-08-17
CN101789392A (zh) 2010-07-28
CN103871993A (zh) 2014-06-18
KR101665706B1 (ko) 2016-10-12
KR101709042B1 (ko) 2017-02-21
US20130062747A1 (en) 2013-03-14
US8298963B2 (en) 2012-10-30
KR20100086436A (ko) 2010-07-30

Similar Documents

Publication Publication Date Title
HK1194861A1 (zh) 半導體器件及其製造方法
TWI562242B (en) Semiconductor device and manufacturing method thereof
GB2483414B (en) Semiconductor Device and Manufacturing Method Thereof
TWI562245B (en) Semiconductor device and method for manufacturing the same
EP2507822A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2497115A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI562364B (en) Semiconductor device and manufacturing method thereof
EP2494601A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2460183A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2481089A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2478563A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI562285B (en) Semiconductor device and method for manufacturing the same
EP2486596A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2390903A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
EP2461360A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2109879A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2472588A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2457256A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2390932A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2486593A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2637212A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2477228A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2571052A4 (en) Semiconductor device and method of manufacturing the same
HK1173555A1 (zh) 集成電路器件及其製造方法
EP2330617A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210105