JP7254416B2 - 被加工物の切削方法 - Google Patents
被加工物の切削方法 Download PDFInfo
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- JP7254416B2 JP7254416B2 JP2019003110A JP2019003110A JP7254416B2 JP 7254416 B2 JP7254416 B2 JP 7254416B2 JP 2019003110 A JP2019003110 A JP 2019003110A JP 2019003110 A JP2019003110 A JP 2019003110A JP 7254416 B2 JP7254416 B2 JP 7254416B2
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- 238000005520 cutting process Methods 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 21
- 238000003384 imaging method Methods 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 description 25
- 230000002950 deficient Effects 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000012790 confirmation Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000012937 correction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D5/00—Arrangements for operating and controlling machines or devices for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D5/007—Control means comprising cameras, vision or image processing systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Turning (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
4 静止基台
6 X軸移動板
8 ボールネジ
10 パルスモータ
11 被加工物
11a 表面
11b 裏面
11c 分断溝
12 X軸送り機構
13 分割予定ライン
14 ガイドレール
14a リニアスケール
14b 検出ユニット
15 デバイス
16 支持台
16a 下板
16b 上板
16c 連結板
17 環状フレーム
18 ボールネジ
19 テープ
20 パルスモータ
21 被加工物ユニット
22 Y軸送り機構
24 ガイドレール
24a リニアスケール
24b 検出ユニット
28 チャックテーブル(保持テーブル)
30 ベルト
32 モータ
34 プーリー
36 第1の垂直コラム
38 ボールネジ
40 パルスモータ
42 第1のZ軸送り機構
44 ガイドレール
46 切削ユニット
48 スピンドルハウジング
50 切削ブレード
52 上方撮像ユニット
52a アーム部
52b 上方カメラ部
54 保持板
54a 保持面
54b 吸引路非含有領域
54c 吸引路含有領域
54d 外周領域
56 クランプ機構
60 制御部
62 下方撮像ユニット
64 第2の垂直コラム
66 ガイドレール
68 ボールネジ
70 パルスモータ
72 第2のZ軸送り機構
74 Z軸移動板
76 支持プレート
78 下方カメラ部
80 カメラ本体部
82 照明装置
L1、L2、L3 溝幅
PA1、PA2、PB1、PB2、PC1、PC2 端部
Claims (2)
- 被加工物の切削方法であって、
該被加工物の下面にテープを貼り付けるテープ貼り付けステップと、
該被加工物を保持する保持面を有し、該保持面の少なくとも一部に可視光に対して透明な材料で形成された撮像用領域を有する保持板を含む保持テーブルで、該テープを介して該被加工物の該下面側を保持する保持ステップと、
該保持テーブルで保持された該被加工物を切削して分断し、該テープに至る分断溝を形成する加工ステップと、
該保持板よりも上方に位置する上方カメラ部で該被加工物の上面側から該分断溝の少なくとも一部を撮像して上面側画像を得ると共に、該保持板よりも下方に位置する下方カメラ部で該保持板の該撮像用領域と該テープとを介して該被加工物の該下面側から該分断溝の該一部を撮像して下面側画像を得る撮像ステップと、
該撮像ステップで得られた該上面側画像と該下面側画像とを比較する画像比較ステップと、を備え、
該画像比較ステップでは、該上面側画像の該分断溝の溝幅と該下面側画像の該分断溝の溝幅との差と、該上面側画像の該分断溝の位置と該下面側画像の該分断溝の位置とのずれ量と、の少なくとも一方が、予め設定された許容条件と比較されることを特徴とする切削方法。 - 該切削方法は、
該上面側画像と該下面側画像とにおける、該差と、該ずれ量との少なくとも一方が該予め設定された許容条件を満たさない場合に警告を発する警告ステップを更に備えることを特徴とする請求項1に記載の切削方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019003110A JP7254416B2 (ja) | 2019-01-11 | 2019-01-11 | 被加工物の切削方法 |
KR1020200002663A KR20200087703A (ko) | 2019-01-11 | 2020-01-08 | 피가공물의 절삭 방법 |
TW109100764A TWI821500B (zh) | 2019-01-11 | 2020-01-09 | 被加工物的切割方法 |
US16/738,210 US11222822B2 (en) | 2019-01-11 | 2020-01-09 | Workpiece cutting method |
SG10202000252QA SG10202000252QA (en) | 2019-01-11 | 2020-01-10 | Workpiece cutting method |
DE102020200257.6A DE102020200257A1 (de) | 2019-01-11 | 2020-01-10 | Werkstückschneidverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019003110A JP7254416B2 (ja) | 2019-01-11 | 2019-01-11 | 被加工物の切削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020113635A JP2020113635A (ja) | 2020-07-27 |
JP7254416B2 true JP7254416B2 (ja) | 2023-04-10 |
Family
ID=71518015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019003110A Active JP7254416B2 (ja) | 2019-01-11 | 2019-01-11 | 被加工物の切削方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11222822B2 (ja) |
JP (1) | JP7254416B2 (ja) |
KR (1) | KR20200087703A (ja) |
DE (1) | DE102020200257A1 (ja) |
SG (1) | SG10202000252QA (ja) |
TW (1) | TWI821500B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7300938B2 (ja) * | 2019-09-02 | 2023-06-30 | 株式会社ディスコ | カーフの認識方法 |
US11136202B2 (en) * | 2020-01-06 | 2021-10-05 | Asm Technology Singapore Pte Ltd | Direct transfer apparatus for electronic components |
KR102502122B1 (ko) * | 2020-10-08 | 2023-02-23 | 아이티팜 주식회사 | 웨이퍼의 소잉 각도 정합성을 계산하고 판정하는 방법 및 이를 수행하는 시스템 |
JP2023140628A (ja) | 2022-03-23 | 2023-10-05 | 株式会社ディスコ | 被加工物の加工方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203883A (ja) | 2002-01-07 | 2003-07-18 | Tokyo Seimitsu Co Ltd | 顕微鏡及び観察方法 |
JP2009246015A (ja) | 2008-03-28 | 2009-10-22 | Disco Abrasive Syst Ltd | チッピング検出方法 |
JP2012232316A (ja) | 2011-04-28 | 2012-11-29 | Disco Corp | レーザー加工装置 |
JP2012256749A (ja) | 2011-06-09 | 2012-12-27 | Disco Abrasive Syst Ltd | 切削装置 |
JP2013074198A (ja) | 2011-09-28 | 2013-04-22 | Disco Abrasive Syst Ltd | 加工装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10312979A (ja) * | 1997-05-12 | 1998-11-24 | Disco Abrasive Syst Ltd | ウェーハの切削状況の検出方法 |
JP5395446B2 (ja) * | 2009-01-22 | 2014-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP2011165847A (ja) | 2010-02-09 | 2011-08-25 | Disco Abrasive Syst Ltd | 分割加工装置 |
JP6562670B2 (ja) * | 2015-03-23 | 2019-08-21 | 株式会社ディスコ | 被加工物の切削方法 |
JP6569330B2 (ja) | 2015-06-29 | 2019-09-04 | 三星ダイヤモンド工業株式会社 | ブレーク装置 |
US20190057936A1 (en) * | 2015-12-18 | 2019-02-21 | Intel Corporation | Transmissive composite film for application to the backside of a microelectronic device |
KR102547356B1 (ko) * | 2017-10-27 | 2023-06-22 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 메탈막 부착 기판의 분단 방법 |
JP7282461B2 (ja) | 2019-04-16 | 2023-05-29 | 株式会社ディスコ | 検査装置、及び加工装置 |
-
2019
- 2019-01-11 JP JP2019003110A patent/JP7254416B2/ja active Active
-
2020
- 2020-01-08 KR KR1020200002663A patent/KR20200087703A/ko active Search and Examination
- 2020-01-09 TW TW109100764A patent/TWI821500B/zh active
- 2020-01-09 US US16/738,210 patent/US11222822B2/en active Active
- 2020-01-10 SG SG10202000252QA patent/SG10202000252QA/en unknown
- 2020-01-10 DE DE102020200257.6A patent/DE102020200257A1/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203883A (ja) | 2002-01-07 | 2003-07-18 | Tokyo Seimitsu Co Ltd | 顕微鏡及び観察方法 |
JP2009246015A (ja) | 2008-03-28 | 2009-10-22 | Disco Abrasive Syst Ltd | チッピング検出方法 |
JP2012232316A (ja) | 2011-04-28 | 2012-11-29 | Disco Corp | レーザー加工装置 |
JP2012256749A (ja) | 2011-06-09 | 2012-12-27 | Disco Abrasive Syst Ltd | 切削装置 |
JP2013074198A (ja) | 2011-09-28 | 2013-04-22 | Disco Abrasive Syst Ltd | 加工装置 |
Also Published As
Publication number | Publication date |
---|---|
US11222822B2 (en) | 2022-01-11 |
JP2020113635A (ja) | 2020-07-27 |
TW202027911A (zh) | 2020-08-01 |
US20200227319A1 (en) | 2020-07-16 |
KR20200087703A (ko) | 2020-07-21 |
TWI821500B (zh) | 2023-11-11 |
DE102020200257A1 (de) | 2020-08-06 |
SG10202000252QA (en) | 2021-07-29 |
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