CN101771068B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101771068B CN101771068B CN200910258845.XA CN200910258845A CN101771068B CN 101771068 B CN101771068 B CN 101771068B CN 200910258845 A CN200910258845 A CN 200910258845A CN 101771068 B CN101771068 B CN 101771068B
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- shielding material
- semiconductor chip
- magnetic shielding
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- H01L2924/11—Device type
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- H01L2924/1904—Component type
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
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JP2008-333247 | 2008-12-26 | ||
JP2008333247A JP5425461B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体装置およびその製造方法 |
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CN201410300535.0A Division CN104078480A (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
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CN101771068A CN101771068A (zh) | 2010-07-07 |
CN101771068B true CN101771068B (zh) | 2014-07-30 |
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CN201410300535.0A Pending CN104078480A (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
CN200910258845.XA Expired - Fee Related CN101771068B (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
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JP (1) | JP5425461B2 (zh) |
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US8803263B2 (en) * | 2008-09-03 | 2014-08-12 | Fuji Electric Co., Ltd. | Magnetic memory element and storage device using the same |
JP5470602B2 (ja) * | 2009-04-01 | 2014-04-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
JP5354376B2 (ja) * | 2009-11-27 | 2013-11-27 | 大日本印刷株式会社 | 半導体装置および半導体装置の製造方法 |
JP6144868B2 (ja) | 2010-11-18 | 2017-06-07 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、及び、フリップチップ型半導体裏面用フィルムの製造方法 |
US8415775B2 (en) | 2010-11-23 | 2013-04-09 | Honeywell International Inc. | Magnetic shielding for multi-chip module packaging |
CN102623482A (zh) * | 2011-02-01 | 2012-08-01 | 飞思卡尔半导体公司 | Mram器件及其装配方法 |
US8466539B2 (en) * | 2011-02-23 | 2013-06-18 | Freescale Semiconductor Inc. | MRAM device and method of assembling same |
JP5858335B2 (ja) * | 2012-01-16 | 2016-02-10 | 大日本印刷株式会社 | 半導体装置 |
JP2013153027A (ja) * | 2012-01-24 | 2013-08-08 | Fujitsu Ltd | 半導体装置及び電源装置 |
JP5829562B2 (ja) * | 2012-03-28 | 2015-12-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5813596B2 (ja) * | 2012-08-10 | 2015-11-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR20140035013A (ko) * | 2012-09-12 | 2014-03-21 | 삼성전자주식회사 | 자기장 생성부 및 이것을 포함하는 반도체 테스트 장치 |
CN103857106B (zh) | 2012-11-29 | 2016-05-18 | 利亚德光电股份有限公司 | Led驱动电路及控制系统 |
US8952504B2 (en) * | 2013-02-08 | 2015-02-10 | Qualcomm Incorporated | Small form factor magnetic shield for magnetorestrictive random access memory (MRAM) |
JP5626402B2 (ja) * | 2013-04-24 | 2014-11-19 | 大日本印刷株式会社 | 半導体装置、半導体装置の製造方法、およびシールド板 |
JP6199601B2 (ja) * | 2013-05-01 | 2017-09-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6122353B2 (ja) * | 2013-06-25 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体パッケージ |
US20150008548A1 (en) * | 2013-07-03 | 2015-01-08 | Kabushiki Kaisha Toshiba | Magnetic memory device |
US9583444B2 (en) * | 2013-08-20 | 2017-02-28 | Infineon Technologies Ag | Method for applying magnetic shielding layer, method for manufacturing a die, die and system |
JP6010005B2 (ja) | 2013-09-09 | 2016-10-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6074345B2 (ja) | 2013-09-24 | 2017-02-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6425380B2 (ja) | 2013-12-26 | 2018-11-21 | ローム株式会社 | パワー回路およびパワーモジュール |
KR102214798B1 (ko) * | 2014-02-05 | 2021-02-10 | 삼성전자주식회사 | 패키지 기판 및 이를 포함하는 반도체 패키지 |
TW201611227A (zh) * | 2014-09-12 | 2016-03-16 | 矽品精密工業股份有限公司 | 封裝結構 |
JP6353763B2 (ja) * | 2014-09-30 | 2018-07-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP6280014B2 (ja) * | 2014-09-30 | 2018-02-14 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP6401036B2 (ja) * | 2014-12-10 | 2018-10-03 | 株式会社ジェイデバイス | 磁気不揮発性メモリ素子の磁気シールドパッケージ |
US9972557B2 (en) * | 2014-12-11 | 2018-05-15 | Stmicroelectronics Pte Ltd | Integrated circuit (IC) package with a solder receiving area and associated methods |
JP6058051B2 (ja) * | 2015-03-05 | 2017-01-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2016174509A1 (en) * | 2015-04-27 | 2016-11-03 | Kabushiki Kaisha Toshiba | Magnetic memory device |
KR102354370B1 (ko) | 2015-04-29 | 2022-01-21 | 삼성전자주식회사 | 쉴딩 구조물을 포함하는 자기 저항 칩 패키지 |
US20170033058A1 (en) * | 2015-07-31 | 2017-02-02 | Everspin Technologies, Inc. | Structures and methods for semiconductor packaging |
KR102444235B1 (ko) * | 2015-08-13 | 2022-09-16 | 삼성전자주식회사 | 자기 쉴딩층을 구비한 mram 소자와 반도체 패키지, 및 그들의 제조방법 |
JP2017183398A (ja) * | 2016-03-29 | 2017-10-05 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
KR102401577B1 (ko) * | 2016-06-02 | 2022-05-24 | 삼성전자주식회사 | 집적 회로 및 표준 셀 라이브러리 |
JP6971908B2 (ja) * | 2017-04-20 | 2021-11-24 | 旭化成エレクトロニクス株式会社 | 磁気検出装置、電流検出装置、磁気検出装置の製造方法、及び電流検出装置の製造方法 |
US11139341B2 (en) | 2018-06-18 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protection of MRAM from external magnetic field using magnetic-field-shielding structure |
US11088083B2 (en) * | 2018-06-29 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | DC and AC magnetic field protection for MRAM device using magnetic-field-shielding structure |
US10818609B2 (en) * | 2018-07-13 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company Ltd. | Package structure and method for fabricating the same |
US11276649B2 (en) * | 2019-06-28 | 2022-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Devices and methods having magnetic shielding layer |
CN111342814B (zh) * | 2020-02-10 | 2021-09-21 | 诺思(天津)微系统有限责任公司 | 一种体声波滤波器和多工器以及电子设备 |
JP2022037612A (ja) * | 2020-08-25 | 2022-03-09 | キオクシア株式会社 | 半導体記憶装置 |
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JP4013140B2 (ja) * | 2003-01-15 | 2007-11-28 | ソニー株式会社 | 磁気メモリ装置 |
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2008
- 2008-12-26 JP JP2008333247A patent/JP5425461B2/ja active Active
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2009
- 2009-12-25 CN CN201410300535.0A patent/CN104078480A/zh active Pending
- 2009-12-25 CN CN200910258845.XA patent/CN101771068B/zh not_active Expired - Fee Related
- 2009-12-26 US US12/647,445 patent/US8258604B2/en not_active Expired - Fee Related
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2012
- 2012-08-10 US US13/572,512 patent/US8652880B2/en active Active
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US5808357A (en) * | 1992-06-02 | 1998-09-15 | Fujitsu Limited | Semiconductor device having resin encapsulated package structure |
US5821613A (en) * | 1993-09-20 | 1998-10-13 | Fujitsu Limited | Semiconductor device in which semiconductor chip has bottom surface with reduced level of organic compounds relatively to other sufaces thereof |
US5960260A (en) * | 1995-09-29 | 1999-09-28 | Texas Instruments Incorporated | Semiconductor device, its manufacturing method, and dicing adhesive element therefor |
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CN101771068A (zh) | 2010-07-07 |
CN104078480A (zh) | 2014-10-01 |
US8258604B2 (en) | 2012-09-04 |
JP5425461B2 (ja) | 2014-02-26 |
US20100164077A1 (en) | 2010-07-01 |
US20120309131A1 (en) | 2012-12-06 |
JP2010153760A (ja) | 2010-07-08 |
US8652880B2 (en) | 2014-02-18 |
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