CN101771068A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101771068A CN101771068A CN200910258845A CN200910258845A CN101771068A CN 101771068 A CN101771068 A CN 101771068A CN 200910258845 A CN200910258845 A CN 200910258845A CN 200910258845 A CN200910258845 A CN 200910258845A CN 101771068 A CN101771068 A CN 101771068A
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- shielding material
- magnetic shielding
- semiconductor chip
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
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JP2008333247A JP5425461B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体装置およびその製造方法 |
JP2008-333247 | 2008-12-26 |
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CN201410300535.0A Division CN104078480A (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
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CN101771068A true CN101771068A (zh) | 2010-07-07 |
CN101771068B CN101771068B (zh) | 2014-07-30 |
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CN201410300535.0A Pending CN104078480A (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
CN200910258845.XA Expired - Fee Related CN101771068B (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
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CN201410300535.0A Pending CN104078480A (zh) | 2008-12-26 | 2009-12-25 | 半导体器件及其制造方法 |
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US (2) | US8258604B2 (zh) |
JP (1) | JP5425461B2 (zh) |
CN (2) | CN104078480A (zh) |
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CN102651449B (zh) * | 2011-02-23 | 2016-12-14 | 飞思卡尔半导体公司 | Mram器件及其装配方法 |
CN109004086A (zh) * | 2013-06-25 | 2018-12-14 | 瑞萨电子株式会社 | 半导体封装 |
CN112151668A (zh) * | 2019-06-28 | 2020-12-29 | 台湾积体电路制造股份有限公司 | 半导体器件及其形成方法 |
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JP6401036B2 (ja) * | 2014-12-10 | 2018-10-03 | 株式会社ジェイデバイス | 磁気不揮発性メモリ素子の磁気シールドパッケージ |
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JP6058051B2 (ja) * | 2015-03-05 | 2017-01-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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-
2008
- 2008-12-26 JP JP2008333247A patent/JP5425461B2/ja active Active
-
2009
- 2009-12-25 CN CN201410300535.0A patent/CN104078480A/zh active Pending
- 2009-12-25 CN CN200910258845.XA patent/CN101771068B/zh not_active Expired - Fee Related
- 2009-12-26 US US12/647,445 patent/US8258604B2/en not_active Expired - Fee Related
-
2012
- 2012-08-10 US US13/572,512 patent/US8652880B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651449A (zh) * | 2011-02-23 | 2012-08-29 | 飞思卡尔半导体公司 | Mram器件及其装配方法 |
CN102651449B (zh) * | 2011-02-23 | 2016-12-14 | 飞思卡尔半导体公司 | Mram器件及其装配方法 |
CN103219374A (zh) * | 2012-01-24 | 2013-07-24 | 富士通株式会社 | 半导体器件及电源器件 |
CN109004086A (zh) * | 2013-06-25 | 2018-12-14 | 瑞萨电子株式会社 | 半导体封装 |
CN112151668A (zh) * | 2019-06-28 | 2020-12-29 | 台湾积体电路制造股份有限公司 | 半导体器件及其形成方法 |
Also Published As
Publication number | Publication date |
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JP5425461B2 (ja) | 2014-02-26 |
US20100164077A1 (en) | 2010-07-01 |
US20120309131A1 (en) | 2012-12-06 |
US8258604B2 (en) | 2012-09-04 |
CN101771068B (zh) | 2014-07-30 |
US8652880B2 (en) | 2014-02-18 |
JP2010153760A (ja) | 2010-07-08 |
CN104078480A (zh) | 2014-10-01 |
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