CN101680111A - 硅锭的制造方法及制造装置 - Google Patents

硅锭的制造方法及制造装置 Download PDF

Info

Publication number
CN101680111A
CN101680111A CN200880015497A CN200880015497A CN101680111A CN 101680111 A CN101680111 A CN 101680111A CN 200880015497 A CN200880015497 A CN 200880015497A CN 200880015497 A CN200880015497 A CN 200880015497A CN 101680111 A CN101680111 A CN 101680111A
Authority
CN
China
Prior art keywords
silicon
alloy liquation
crucible
liquation
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880015497A
Other languages
English (en)
Chinese (zh)
Inventor
西尾健一
黑田昭夫
森田一树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MNK-SOG硅公司
MNK SOG Silicon Inc
Original Assignee
MNK SOG Silicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MNK SOG Silicon Inc filed Critical MNK SOG Silicon Inc
Publication of CN101680111A publication Critical patent/CN101680111A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
CN200880015497A 2007-03-19 2008-03-19 硅锭的制造方法及制造装置 Pending CN101680111A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP069741/2007 2007-03-19
JP2007069741 2007-03-19
PCT/JP2008/055098 WO2008114822A1 (ja) 2007-03-19 2008-03-19 シリコンインゴットの製造方法および製造装置

Publications (1)

Publication Number Publication Date
CN101680111A true CN101680111A (zh) 2010-03-24

Family

ID=39765926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880015497A Pending CN101680111A (zh) 2007-03-19 2008-03-19 硅锭的制造方法及制造装置

Country Status (7)

Country Link
US (1) US20100143231A1 (enExample)
EP (1) EP2138610A1 (enExample)
JP (2) JP4337954B2 (enExample)
KR (1) KR20100015652A (enExample)
CN (1) CN101680111A (enExample)
CA (1) CA2681353A1 (enExample)
WO (1) WO2008114822A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102311121A (zh) * 2011-08-29 2012-01-11 大连理工大学 一种合金化分凝提纯工业硅的方法
CN102749129A (zh) * 2011-04-19 2012-10-24 蒂雅克股份有限公司 测压元件单元
CN102749128A (zh) * 2011-04-19 2012-10-24 蒂雅克股份有限公司 测压元件单元
CN103180493A (zh) * 2010-10-21 2013-06-26 Sk新技术株式会社 用于生长碳化硅单晶的方法和装置
CN104093666A (zh) * 2012-02-01 2014-10-08 思利科材料有限公司 硅纯化模具和方法
TWI618823B (zh) * 2016-11-03 2018-03-21 上海新昇半導體科技有限公司 自動進料系統及進料方法
CN108706590A (zh) * 2018-07-07 2018-10-26 孟静 太阳能级多晶硅制备方法
CN108796606A (zh) * 2018-07-07 2018-11-13 孟静 太阳能级多晶硅制备装置
CN109311758A (zh) * 2016-06-15 2019-02-05 赛峰航空器发动机 制造涡轮发动机部件的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
CN101798705A (zh) * 2010-03-12 2010-08-11 上海太阳能电池研究与发展中心 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置
CN101812727B (zh) * 2010-04-13 2011-12-28 上海太阳能电池研究与发展中心 一种直流电场下定向凝固提纯多晶硅的方法
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
KR101317198B1 (ko) * 2011-10-24 2013-10-15 한국생산기술연구원 성장로 감시 장치
WO2013111314A1 (ja) * 2012-01-27 2013-08-01 Kaneko Kyojiro シリコン純化法
CN102605424A (zh) * 2012-03-06 2012-07-25 浙江宏业新能源有限公司 多晶硅铸锭炉控制系统及控制方法
CN102786060B (zh) * 2012-08-15 2016-08-17 大连理工大学 一种增强合金化分凝提纯多晶硅的方法
CN104635805B (zh) * 2014-12-24 2017-05-17 湖南顶立科技有限公司 一种温度控制系统
JP6451333B2 (ja) * 2015-01-14 2019-01-16 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950629B2 (ja) * 1982-04-20 1984-12-10 東芝セラミツクス株式会社 単結晶シリコン引上げ用窒化珪素製治具の製造方法
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JP2795030B2 (ja) * 1992-01-29 1998-09-10 信越半導体株式会社 単結晶シリコン棒の製造方法
JP3085568B2 (ja) * 1993-11-01 2000-09-11 コマツ電子金属株式会社 シリコン単結晶の製造装置および製造方法
JP3000923B2 (ja) * 1996-03-28 2000-01-17 住友金属工業株式会社 単結晶引き上げ方法
JP3325900B2 (ja) 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JP4383639B2 (ja) 2000-07-31 2009-12-16 信越半導体株式会社 Ｇａドープシリコン単結晶の製造方法およびＧａドープシリコン単結晶、並びにこれから作製されたシリコン単結晶太陽電池
JP2003277040A (ja) 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP4060106B2 (ja) 2002-03-27 2008-03-12 三菱マテリアル株式会社 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP2004067452A (ja) * 2002-08-07 2004-03-04 Shin Etsu Handotai Co Ltd 単結晶の引き上げ条件の設計方法
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
JP2008069055A (ja) * 2006-09-15 2008-03-27 Covalent Materials Corp シリコン単結晶の製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103180493B (zh) * 2010-10-21 2016-08-17 Sk新技术株式会社 用于生长碳化硅单晶的方法和装置
CN103180493A (zh) * 2010-10-21 2013-06-26 Sk新技术株式会社 用于生长碳化硅单晶的方法和装置
CN102749129A (zh) * 2011-04-19 2012-10-24 蒂雅克股份有限公司 测压元件单元
CN102749128A (zh) * 2011-04-19 2012-10-24 蒂雅克股份有限公司 测压元件单元
CN102749128B (zh) * 2011-04-19 2014-08-27 蒂雅克股份有限公司 测压元件单元
CN102749129B (zh) * 2011-04-19 2014-09-24 蒂雅克股份有限公司 测压元件单元
CN102311121A (zh) * 2011-08-29 2012-01-11 大连理工大学 一种合金化分凝提纯工业硅的方法
CN104093666A (zh) * 2012-02-01 2014-10-08 思利科材料有限公司 硅纯化模具和方法
US9617618B2 (en) 2012-02-01 2017-04-11 Silicor Materials Inc. Silicon purification mold and method
CN110054189A (zh) * 2012-02-01 2019-07-26 思利科材料有限公司 硅纯化模具和方法
CN109311758A (zh) * 2016-06-15 2019-02-05 赛峰航空器发动机 制造涡轮发动机部件的方法
TWI618823B (zh) * 2016-11-03 2018-03-21 上海新昇半導體科技有限公司 自動進料系統及進料方法
CN108706590A (zh) * 2018-07-07 2018-10-26 孟静 太阳能级多晶硅制备方法
CN108796606A (zh) * 2018-07-07 2018-11-13 孟静 太阳能级多晶硅制备装置
CN108796606B (zh) * 2018-07-07 2020-11-03 玉环市几偶孵化器有限公司 太阳能级多晶硅制备装置

Also Published As

Publication number Publication date
JP2009167101A (ja) 2009-07-30
EP2138610A1 (en) 2009-12-30
CA2681353A1 (en) 2008-09-25
JP4358300B2 (ja) 2009-11-04
KR20100015652A (ko) 2010-02-12
JPWO2008114822A1 (ja) 2010-07-08
US20100143231A1 (en) 2010-06-10
JP4337954B2 (ja) 2009-09-30
WO2008114822A1 (ja) 2008-09-25

Similar Documents

Publication Publication Date Title
CN101680111A (zh) 硅锭的制造方法及制造装置
JP5564418B2 (ja) ポリクリスタルシリコンまたはマルチクリスタルシリコンの製造装置および方法、それらによって製造されるポリクリスタルシリコンまたはマルチクリスタルシリコンのインゴットおよびウエハ、ならびにそれらの太陽電池製造のための使用
JP5059596B2 (ja) 単結晶シリコンにおける連続的成長用システム
JP5909276B2 (ja) 最初のチャージだけをドーピングすることによる、均一にドーピングされたシリコンインゴットの成長
TWI745520B (zh) 形成具有經改善之電阻率控制之單晶矽錠之方法
CN101545135B (zh) 太阳能级硅晶体的制备及提纯方法
US8329133B2 (en) Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
US20090314198A1 (en) Device and method for production of semiconductor grade silicon
JP5731349B2 (ja) 単結晶シリコンにおける連続的成長用システム
US20100178195A1 (en) Method of solidifying metallic silicon
US20070006916A1 (en) Solar-cell polycrystalline silicon and method for producing the same
JP2013522160A (ja) シリコンの純化方法
JP5724226B2 (ja) シリコン単結晶の育成方法
EP2551238A1 (en) Method for purifying silicon
JP5584712B2 (ja) シリコン精製方法
US10072350B2 (en) Method for manufacturing a silicon ingot having uniform phosphorus concentration
JP5118268B1 (ja) 高純度シリコンの製造方法および高純度シリコン
JP2013144624A (ja) シリコン製造装置
JPH08301696A (ja) 化合物半導体結晶の製造方法とその装置
WO2013080575A1 (ja) 高純度シリコンの製造方法および高純度シリコン

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20100324