CA2681353A1 - Method and apparatus for manufacturing silicon ingot - Google Patents

Method and apparatus for manufacturing silicon ingot Download PDF

Info

Publication number
CA2681353A1
CA2681353A1 CA002681353A CA2681353A CA2681353A1 CA 2681353 A1 CA2681353 A1 CA 2681353A1 CA 002681353 A CA002681353 A CA 002681353A CA 2681353 A CA2681353 A CA 2681353A CA 2681353 A1 CA2681353 A1 CA 2681353A1
Authority
CA
Canada
Prior art keywords
silicon
alloy melt
crucible
melt
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002681353A
Other languages
English (en)
French (fr)
Inventor
Kenichi Nishio
Teruo Kuroda
Kazuki Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MNK-SOG SILICON Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2681353A1 publication Critical patent/CA2681353A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
CA002681353A 2007-03-19 2008-03-19 Method and apparatus for manufacturing silicon ingot Abandoned CA2681353A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-069741 2007-03-19
JP2007069741 2007-03-19
PCT/JP2008/055098 WO2008114822A1 (ja) 2007-03-19 2008-03-19 シリコンインゴットの製造方法および製造装置

Publications (1)

Publication Number Publication Date
CA2681353A1 true CA2681353A1 (en) 2008-09-25

Family

ID=39765926

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002681353A Abandoned CA2681353A1 (en) 2007-03-19 2008-03-19 Method and apparatus for manufacturing silicon ingot

Country Status (7)

Country Link
US (1) US20100143231A1 (enExample)
EP (1) EP2138610A1 (enExample)
JP (2) JP4337954B2 (enExample)
KR (1) KR20100015652A (enExample)
CN (1) CN101680111A (enExample)
CA (1) CA2681353A1 (enExample)
WO (1) WO2008114822A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
CN101798705A (zh) * 2010-03-12 2010-08-11 上海太阳能电池研究与发展中心 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置
CN101812727B (zh) * 2010-04-13 2011-12-28 上海太阳能电池研究与发展中心 一种直流电场下定向凝固提纯多晶硅的方法
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
KR101690490B1 (ko) * 2010-10-21 2016-12-28 에스케이이노베이션 주식회사 탄화규소 단결정의 제조방법 및 장치
CN102749128B (zh) * 2011-04-19 2014-08-27 蒂雅克股份有限公司 测压元件单元
JP5679120B2 (ja) * 2011-04-19 2015-03-04 ティアック株式会社 ロードセルユニット
CN102311121A (zh) * 2011-08-29 2012-01-11 大连理工大学 一种合金化分凝提纯工业硅的方法
KR101317198B1 (ko) * 2011-10-24 2013-10-15 한국생산기술연구원 성장로 감시 장치
WO2013111314A1 (ja) * 2012-01-27 2013-08-01 Kaneko Kyojiro シリコン純化法
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
CN102605424A (zh) * 2012-03-06 2012-07-25 浙江宏业新能源有限公司 多晶硅铸锭炉控制系统及控制方法
CN102786060B (zh) * 2012-08-15 2016-08-17 大连理工大学 一种增强合金化分凝提纯多晶硅的方法
CN104635805B (zh) * 2014-12-24 2017-05-17 湖南顶立科技有限公司 一种温度控制系统
JP6451333B2 (ja) * 2015-01-14 2019-01-16 株式会社Sumco シリコン単結晶の製造方法
FR3052773B1 (fr) * 2016-06-15 2020-10-30 Snecma Procede de fabrication d'une piece de turbomachine
CN108018602A (zh) * 2016-11-03 2018-05-11 上海新昇半导体科技有限公司 自动进料系统及进料方法
CN108706590A (zh) * 2018-07-07 2018-10-26 孟静 太阳能级多晶硅制备方法
CN108796606B (zh) * 2018-07-07 2020-11-03 玉环市几偶孵化器有限公司 太阳能级多晶硅制备装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950629B2 (ja) * 1982-04-20 1984-12-10 東芝セラミツクス株式会社 単結晶シリコン引上げ用窒化珪素製治具の製造方法
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JP2795030B2 (ja) * 1992-01-29 1998-09-10 信越半導体株式会社 単結晶シリコン棒の製造方法
JP3085568B2 (ja) * 1993-11-01 2000-09-11 コマツ電子金属株式会社 シリコン単結晶の製造装置および製造方法
JP3000923B2 (ja) * 1996-03-28 2000-01-17 住友金属工業株式会社 単結晶引き上げ方法
JP3325900B2 (ja) 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JP4383639B2 (ja) 2000-07-31 2009-12-16 信越半導体株式会社 Ｇａドープシリコン単結晶の製造方法およびＧａドープシリコン単結晶、並びにこれから作製されたシリコン単結晶太陽電池
JP2003277040A (ja) 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP4060106B2 (ja) 2002-03-27 2008-03-12 三菱マテリアル株式会社 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板及びスパッタリング用ターゲット素材
JP2004067452A (ja) * 2002-08-07 2004-03-04 Shin Etsu Handotai Co Ltd 単結晶の引き上げ条件の設計方法
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
JP2008069055A (ja) * 2006-09-15 2008-03-27 Covalent Materials Corp シリコン単結晶の製造方法

Also Published As

Publication number Publication date
JP2009167101A (ja) 2009-07-30
EP2138610A1 (en) 2009-12-30
CN101680111A (zh) 2010-03-24
JP4358300B2 (ja) 2009-11-04
KR20100015652A (ko) 2010-02-12
JPWO2008114822A1 (ja) 2010-07-08
US20100143231A1 (en) 2010-06-10
JP4337954B2 (ja) 2009-09-30
WO2008114822A1 (ja) 2008-09-25

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Effective date: 20130319