CN108796606B - 太阳能级多晶硅制备装置 - Google Patents
太阳能级多晶硅制备装置 Download PDFInfo
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- CN108796606B CN108796606B CN201810740370.7A CN201810740370A CN108796606B CN 108796606 B CN108796606 B CN 108796606B CN 201810740370 A CN201810740370 A CN 201810740370A CN 108796606 B CN108796606 B CN 108796606B
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- Prior art keywords
- crucible
- furnace body
- silicon
- melt
- rod
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
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Priority Applications (1)
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CN201810740370.7A CN108796606B (zh) | 2018-07-07 | 2018-07-07 | 太阳能级多晶硅制备装置 |
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CN201810740370.7A CN108796606B (zh) | 2018-07-07 | 2018-07-07 | 太阳能级多晶硅制备装置 |
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CN108796606A CN108796606A (zh) | 2018-11-13 |
CN108796606B true CN108796606B (zh) | 2020-11-03 |
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CN201810740370.7A Active CN108796606B (zh) | 2018-07-07 | 2018-07-07 | 太阳能级多晶硅制备装置 |
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CN (1) | CN108796606B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11264029A (ja) * | 1998-03-17 | 1999-09-28 | Nippon Light Metal Co Ltd | アルミニウム精製方法及び精製装置 |
CN101680111A (zh) * | 2007-03-19 | 2010-03-24 | Mnk-Sog硅公司 | 硅锭的制造方法及制造装置 |
CN103343384A (zh) * | 2013-07-08 | 2013-10-09 | 昆明理工大学 | 一种分离过共晶铝硅合金的装置及应用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3054696B2 (ja) * | 1998-06-30 | 2000-06-19 | 京都大学長 | Ti−Al−Si系合金の製造方法 |
CN1108400C (zh) * | 1999-08-23 | 2003-05-14 | 浙江大学 | 去除硅单晶中重金属杂质的方法 |
CN101798705A (zh) * | 2010-03-12 | 2010-08-11 | 上海太阳能电池研究与发展中心 | 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置 |
CN102260909A (zh) * | 2010-05-31 | 2011-11-30 | 比亚迪股份有限公司 | 一种硅提纯的方法 |
CN102398905A (zh) * | 2010-09-14 | 2012-04-04 | 赵钧永 | 精制硅的方法、设备和获得的硅晶体 |
WO2013111314A1 (ja) * | 2012-01-27 | 2013-08-01 | Kaneko Kyojiro | シリコン純化法 |
CN103072995B (zh) * | 2013-02-04 | 2014-07-09 | 福建兴朝阳硅材料股份有限公司 | 一种去除多晶硅中的磷的方法 |
CN103243385B (zh) * | 2013-05-13 | 2016-04-27 | 北京科技大学 | 电解精炼-液态阴极原位定向凝固制备高纯单晶硅的方法 |
CN103539125B (zh) * | 2013-10-18 | 2015-09-02 | 青岛隆盛晶硅科技有限公司 | 介质熔炼与初步定向凝固衔接提纯多晶硅的方法 |
CN104532340A (zh) * | 2014-12-24 | 2015-04-22 | 大连理工大学 | 一种电子束熔炼与单晶提拉耦合的装置及方法 |
HUP1500509A1 (hu) * | 2015-10-29 | 2017-05-29 | Bay Zoltan Alkalmazott Kutatasi Koezhasznu Nonprofit Kft Mernoeki Divizio | Eljárás szilícium kristályok dúsítására és elválasztására fémolvadékból szilícium tisztítására |
CN107557860A (zh) * | 2017-07-25 | 2018-01-09 | 昆明理工大学 | 一种钛硅物料制备太阳能级多晶硅的方法 |
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2018
- 2018-07-07 CN CN201810740370.7A patent/CN108796606B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11264029A (ja) * | 1998-03-17 | 1999-09-28 | Nippon Light Metal Co Ltd | アルミニウム精製方法及び精製装置 |
CN101680111A (zh) * | 2007-03-19 | 2010-03-24 | Mnk-Sog硅公司 | 硅锭的制造方法及制造装置 |
CN103343384A (zh) * | 2013-07-08 | 2013-10-09 | 昆明理工大学 | 一种分离过共晶铝硅合金的装置及应用 |
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CN108796606A (zh) | 2018-11-13 |
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Effective date of registration: 20201013 Address after: Room 201, second floor, bingang industrial town, Ganjiang Town, Yuhuan City, Taizhou City, Zhejiang Province Applicant after: Yuhuan Jiyi Incubator Co., Ltd Address before: 050000 Unit 602, Building 40, Unit 3, 416 Huaibei Road, Yuhua District, Shijiazhuang City, Hebei Province Applicant before: Meng Jing |
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Application publication date: 20181113 Assignee: Taizhou like Technology Co., Ltd Assignor: Yuhuan Jiyi Incubator Co., Ltd Contract record no.: X2021330000401 Denomination of invention: Solar grade polysilicon preparation device Granted publication date: 20201103 License type: Common License Record date: 20211013 |