JP5731349B2 - 単結晶シリコンにおける連続的成長用システム - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 claims description 108
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- 229920005591 polysilicon Polymers 0.000 claims description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 112
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- 229910052760 oxygen Inorganic materials 0.000 description 29
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Description
202 成長チャンバ
203 シリコンインゴット
205 熱シールド
208 プレ溶融炉
209 結晶原料
210a、210b 多結晶引上チャンバ
211 環状領域
220 堰
222 成長坩堝
312 流れコントローラー
400 溶融チャンバ
402 ヒータ
404 熱導体
414 堰
416 第1区域
Claims (3)
- 単結晶インゴットの成長のための装置であって、
垂直移動がなく、溶融結晶原料を保持するための、低アスペクト比で大きい直径の固定された坩堝であって、4:1から10:1の範囲内で高さに対する直径を有している坩堝と、
固体材料の小片または顆粒を含む前記坩堝中の注入物へのより大きい接触表面及びより短い熱経路に起因して、熱が均一に前記小片または顆粒中に作用するように、前記坩堝中の溶融結晶原料に亘る対応する温度ゾーンを構築するために、固定された距離で前記坩堝の底面下方に設けられた複数の独立した制御可能なヒータと、
温度ゾーンが熱を固体材料中に所望の速度で均一に作動させるように、最適温度分布を達成するために各ヒータに熱作動用出力を印加するための手段と、を備える、装置。 - 前記小片または顆粒が所望の速度で均一に溶融される反復可能な状態を達成するために、最適温度分布を達成するために必要とされる各ヒータの出力消費をモニタリングして、前記モニタされた出力消費に従って各ヒータに熱作動用出力を印加するための制御手段と、
をさらに備える、請求項1に記載の装置。 - 単結晶インゴットの成長のための装置であって、
垂直移動がなく、シリコン又はポリシリコンの溶融物を保持するための低アスペクト比で大きい直径の固定された坩堝であって、4:1から10:1の範囲内で高さに対する直径を有している坩堝と、
固体材料の小片または顆粒を含む坩堝中のより大きい接触面積及びより短い熱経路の注入物に熱が均一に作用するように、前記溶融物に亘って対応する温度ゾーンを構築するための、固定された距離で坩堝の下方に配置される複数の独立して制御されるヒータと、
前記小片または顆粒が所望の速度で均一に溶融するように、溶融物に亘って最適温度分布を達成するように各ヒータを熱的に作動させる手段と、
前記溶融物に亘る最適温度分布を達成するために各ヒータで消費された出力をモニタリングすることによって、各ヒータの熱作動を選択的に制御するための制御手段と、
を備える、装置。
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DE102013203740B4 (de) * | 2013-03-05 | 2020-06-18 | Solarworld Industries Gmbh | Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken |
US11414778B2 (en) * | 2019-07-29 | 2022-08-16 | Globalwafers Co., Ltd. | Production and use of dynamic state charts when growing a single crystal silicon ingot |
US11856678B2 (en) | 2019-10-29 | 2023-12-26 | Senic Inc. | Method of measuring a graphite article, apparatus for a measurement, and ingot growing system |
KR102262866B1 (ko) * | 2020-08-31 | 2021-06-08 | 에스케이씨 주식회사 | 잉곳성장용기의 특성예측방법 및 잉곳성장시스템 |
CN114318496A (zh) * | 2021-12-29 | 2022-04-12 | 南京光宝晶体科技有限公司 | 一种双发热体结构的大尺寸晶体生长装置和方法 |
CN115404538B (zh) * | 2022-07-20 | 2023-08-22 | 中国电子科技集团公司第二十六研究所 | 一种可实现晶体连续生长的装置 |
CN116180212B (zh) * | 2023-04-27 | 2023-08-11 | 北京大学 | 一种高温自动加料的拉晶装置及其使用方法 |
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US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
JP2519459B2 (ja) * | 1987-06-23 | 1996-07-31 | 東芝セラミックス株式会社 | 単結晶引上装置 |
US5162072A (en) * | 1990-12-11 | 1992-11-10 | General Electric Company | Apparatus and method for control of melt flow pattern in a crystal growth process |
DE4218123C2 (de) * | 1992-06-02 | 1996-05-02 | Leybold Ag | Vorrichtung für die kontinuierliche Zuführung von Chargengut für einen Schmelztiegel und deren Verwendung |
JPH07267772A (ja) * | 1994-03-25 | 1995-10-17 | Komatsu Ltd | 単結晶引上げ装置 |
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