CN101552242A - 薄膜晶体管阵列面板及其制造方法 - Google Patents
薄膜晶体管阵列面板及其制造方法 Download PDFInfo
- Publication number
- CN101552242A CN101552242A CNA2009101377593A CN200910137759A CN101552242A CN 101552242 A CN101552242 A CN 101552242A CN A2009101377593 A CNA2009101377593 A CN A2009101377593A CN 200910137759 A CN200910137759 A CN 200910137759A CN 101552242 A CN101552242 A CN 101552242A
- Authority
- CN
- China
- Prior art keywords
- layer
- drain electrode
- data wire
- electrode
- gate line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR71612/04 | 2004-09-08 | ||
KR1020040071612A KR101061850B1 (ko) | 2004-09-08 | 2004-09-08 | 박막 트랜지스터 표시판 및 그 제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100981501A Division CN1761049B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101552242A true CN101552242A (zh) | 2009-10-07 |
CN101552242B CN101552242B (zh) | 2012-02-01 |
Family
ID=36159673
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101377593A Active CN101552242B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
CN2005100981501A Active CN1761049B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100981501A Active CN1761049B (zh) | 2004-09-08 | 2005-09-08 | 薄膜晶体管阵列面板及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7301170B2 (zh) |
JP (1) | JP5240964B2 (zh) |
KR (1) | KR101061850B1 (zh) |
CN (2) | CN101552242B (zh) |
TW (1) | TWI404212B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103745980A (zh) * | 2014-01-28 | 2014-04-23 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及其制作方法及液晶显示装置 |
CN107402482A (zh) * | 2016-05-19 | 2017-11-28 | 三星显示有限公司 | 具有改善的可制造性的显示基板 |
CN109545689A (zh) * | 2018-12-03 | 2019-03-29 | 惠科股份有限公司 | 主动开关及其制作方法、显示装置 |
CN112368839A (zh) * | 2018-06-27 | 2021-02-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
US11227938B2 (en) | 2018-12-03 | 2022-01-18 | HKC Corporation Limited | Thin film transistor structure, manufacturing method thereof, and display device |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100935670B1 (ko) * | 2003-04-04 | 2010-01-07 | 삼성전자주식회사 | 액정표시장치, 박막 트랜지스터 표시판 및 그의 제조 방법 |
KR20060042425A (ko) * | 2004-11-09 | 2006-05-15 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
TWI326379B (en) * | 2005-09-20 | 2010-06-21 | Au Optronics Corp | A double-sided liquid crystal display |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
KR20070075808A (ko) * | 2006-01-16 | 2007-07-24 | 삼성전자주식회사 | 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판 |
TWI282467B (en) * | 2006-04-07 | 2007-06-11 | Innolux Display Corp | Liquid crystal panel |
KR101240652B1 (ko) * | 2006-04-24 | 2013-03-08 | 삼성디스플레이 주식회사 | 표시 장치용 박막 트랜지스터 표시판 및 그 제조 방법 |
WO2008001517A1 (en) * | 2006-06-30 | 2008-01-03 | Sharp Kabushiki Kaisha | Tft substrate, display panel and display device provided with such tft substrate, and tft substrate manufacturing method |
US20080032431A1 (en) * | 2006-08-03 | 2008-02-07 | Tpo Displays Corp. | Method for fabricating a system for displaying images |
JP2008098611A (ja) * | 2006-09-15 | 2008-04-24 | Kobe Steel Ltd | 表示装置 |
TWI319610B (en) * | 2006-12-29 | 2010-01-11 | Winbond Electronics Corp | Method of manufacturing openings and via openings |
KR101373735B1 (ko) | 2007-02-22 | 2014-03-14 | 삼성디스플레이 주식회사 | 신호선의 제조 방법, 박막 트랜지스터 표시판 및 그의 제조방법 |
KR101319334B1 (ko) * | 2007-03-20 | 2013-10-16 | 엘지디스플레이 주식회사 | 액정표시패널 및 그의 제조방법 |
US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP4506810B2 (ja) * | 2007-10-19 | 2010-07-21 | ソニー株式会社 | 表示装置 |
KR101490480B1 (ko) * | 2008-07-07 | 2015-02-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101570347B1 (ko) * | 2008-11-25 | 2015-11-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
WO2011027701A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
WO2011027676A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101623956B1 (ko) * | 2010-01-15 | 2016-05-24 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
KR101702106B1 (ko) * | 2010-03-17 | 2017-02-03 | 삼성디스플레이 주식회사 | 전기 습윤 표시 장치 |
JP5839819B2 (ja) * | 2010-04-16 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 発光装置、表示モジュール及び電子機器 |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) * | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
KR101764902B1 (ko) * | 2010-12-06 | 2017-08-14 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
KR20170016024A (ko) | 2011-05-10 | 2017-02-10 | 에이치. 씨. 스타아크 아이앤씨 | 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품 |
CN102636927B (zh) * | 2011-12-23 | 2015-07-29 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法 |
JP6033071B2 (ja) | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20130240995A1 (en) * | 2012-03-19 | 2013-09-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Thin-film transistor array substrate and manufacturing method thereof |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
KR101444777B1 (ko) * | 2012-08-10 | 2014-09-26 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 및 그 제조방법 |
US20150221773A1 (en) * | 2012-09-05 | 2015-08-06 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
KR102094841B1 (ko) * | 2013-05-16 | 2020-03-31 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
WO2016017516A1 (ja) * | 2014-07-30 | 2016-02-04 | シャープ株式会社 | 表示装置およびその製造方法 |
KR20160017795A (ko) | 2014-08-05 | 2016-02-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법, 및 박막 트랜지스터 기판을 포함하는 표시 장치 |
KR102193886B1 (ko) | 2014-11-12 | 2020-12-23 | 엘지디스플레이 주식회사 | 고 개구율 유기발광 다이오드 표시장치 및 그 제조 방법 |
KR102352182B1 (ko) * | 2015-01-23 | 2022-01-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN105655391B (zh) * | 2016-01-28 | 2018-10-26 | 武汉华星光电技术有限公司 | Tft阵列基板及其制作方法 |
TWI662327B (zh) * | 2018-02-09 | 2019-06-11 | 友達光電股份有限公司 | 顯示面板 |
KR20200042971A (ko) * | 2018-10-16 | 2020-04-27 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
CN112259558B (zh) * | 2020-10-15 | 2022-12-06 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1327358C (en) | 1987-11-17 | 1994-03-01 | Morio Fujiu | Fluoro cytidine derivatives |
JP2673460B2 (ja) * | 1990-02-26 | 1997-11-05 | キヤノン株式会社 | 液晶表示素子 |
EP0633776B1 (en) | 1992-04-02 | 2001-05-09 | Smithkline Beecham Corporation | Compounds useful for treating allergic and inflammatory diseases |
JPH0926598A (ja) | 1995-07-10 | 1997-01-28 | Hitachi Ltd | アクティブマトリクス型液晶ディスプレイ装置 |
US5831694A (en) * | 1995-06-14 | 1998-11-03 | Hitachi, Ltd. | TFT panel for high resolution- and large size- liquid crystal display |
EP0775931B1 (en) * | 1995-11-21 | 2005-10-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a liquid crystal display |
TW409194B (en) * | 1995-11-28 | 2000-10-21 | Sharp Kk | Active matrix substrate and liquid crystal display apparatus and method for producing the same |
KR100248123B1 (ko) * | 1997-03-04 | 2000-03-15 | 구본준 | 박막트랜지스터및그의제조방법 |
US6333518B1 (en) * | 1997-08-26 | 2001-12-25 | Lg Electronics Inc. | Thin-film transistor and method of making same |
WO1999012102A1 (en) | 1997-09-05 | 1999-03-11 | Sun Microsystems, Inc. | A multiprocessing system including cluster optimization mechanisms |
JP4493741B2 (ja) * | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100318369B1 (ko) | 1998-12-17 | 2002-08-28 | 엘지.필립스 엘시디 주식회사 | 전극형성방법 |
US6287899B1 (en) * | 1998-12-31 | 2001-09-11 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
JP2000284326A (ja) | 1999-03-30 | 2000-10-13 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP2000314897A (ja) | 1999-05-06 | 2000-11-14 | Hitachi Ltd | 液晶表示装置 |
US6380559B1 (en) * | 1999-06-03 | 2002-04-30 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display |
KR100733876B1 (ko) | 2000-01-04 | 2007-07-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그의 제조방법 |
JP3785900B2 (ja) * | 2000-04-28 | 2006-06-14 | 株式会社日立製作所 | 液晶表示装置とその製造方法 |
KR20020039736A (ko) | 2000-11-22 | 2002-05-30 | 박종섭 | 액정 표시소자 및 그 제조 방법 |
JP3859119B2 (ja) | 2000-12-22 | 2006-12-20 | 日立金属株式会社 | 電子部品用薄膜配線 |
JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2002322528A (ja) * | 2001-04-24 | 2002-11-08 | Mitsubishi Chemicals Corp | 電極配線材料およびその製造方法 |
JP4920140B2 (ja) * | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置及びその製造方法 |
JP2003172946A (ja) * | 2001-09-28 | 2003-06-20 | Fujitsu Display Technologies Corp | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
US7102168B2 (en) | 2001-12-24 | 2006-09-05 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for display and manufacturing method thereof |
JP3675420B2 (ja) * | 2002-03-26 | 2005-07-27 | セイコーエプソン株式会社 | 液晶表示装置及び電子機器 |
US20030203627A1 (en) * | 2002-04-30 | 2003-10-30 | Jia-Pang Pang | Method for fabricating thin film transistor |
TWI273637B (en) * | 2002-05-17 | 2007-02-11 | Semiconductor Energy Lab | Manufacturing method of semiconductor device |
KR20040001689A (ko) | 2002-06-28 | 2004-01-07 | 삼성전자주식회사 | 배선, 이를 포함하는 박막 트랜지스터 어레이 기판 및 그제조 방법 |
JP2004035647A (ja) | 2002-07-01 | 2004-02-05 | Sumitomo Rubber Ind Ltd | 糸ゴム組成物、糸ゴムおよび糸巻きゴルフボール |
JP2004054069A (ja) * | 2002-07-23 | 2004-02-19 | Advanced Display Inc | 表示装置及び表示装置の断線修復方法 |
JP4496518B2 (ja) | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
KR100883769B1 (ko) | 2002-11-08 | 2009-02-18 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
KR100895313B1 (ko) * | 2002-12-11 | 2009-05-07 | 삼성전자주식회사 | 유기 발광 표시판 |
KR100511353B1 (ko) | 2002-12-27 | 2005-08-31 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조방법 및 이 방법에 의한 액정표시소자 |
US7105896B2 (en) * | 2003-07-22 | 2006-09-12 | Nec Lcd Technologies, Ltd. | Thin film transistor circuit device, production method thereof and liquid crystal display using the think film transistor circuit device |
JP2005163901A (ja) | 2003-12-02 | 2005-06-23 | Taisei Corp | 水底管の敷設方法 |
-
2004
- 2004-09-08 KR KR1020040071612A patent/KR101061850B1/ko active IP Right Grant
-
2005
- 2005-07-12 US US11/180,989 patent/US7301170B2/en not_active Expired - Fee Related
- 2005-07-13 TW TW094123767A patent/TWI404212B/zh active
- 2005-08-11 JP JP2005233289A patent/JP5240964B2/ja active Active
- 2005-09-08 CN CN2009101377593A patent/CN101552242B/zh active Active
- 2005-09-08 CN CN2005100981501A patent/CN1761049B/zh active Active
-
2007
- 2007-11-21 US US11/944,083 patent/US7662715B2/en active Active
- 2007-11-21 US US11/944,130 patent/US7550768B2/en active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103745980A (zh) * | 2014-01-28 | 2014-04-23 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及其制作方法及液晶显示装置 |
CN103745980B (zh) * | 2014-01-28 | 2017-02-15 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及其制作方法及液晶显示装置 |
CN107402482A (zh) * | 2016-05-19 | 2017-11-28 | 三星显示有限公司 | 具有改善的可制造性的显示基板 |
CN112368839A (zh) * | 2018-06-27 | 2021-02-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
CN112368839B (zh) * | 2018-06-27 | 2024-04-12 | 三星显示有限公司 | 显示面板及制造该显示面板的方法 |
CN109545689A (zh) * | 2018-12-03 | 2019-03-29 | 惠科股份有限公司 | 主动开关及其制作方法、显示装置 |
US11227938B2 (en) | 2018-12-03 | 2022-01-18 | HKC Corporation Limited | Thin film transistor structure, manufacturing method thereof, and display device |
Also Published As
Publication number | Publication date |
---|---|
TW200614514A (en) | 2006-05-01 |
CN1761049B (zh) | 2010-09-01 |
CN1761049A (zh) | 2006-04-19 |
US20060050192A1 (en) | 2006-03-09 |
US7550768B2 (en) | 2009-06-23 |
US20080073674A1 (en) | 2008-03-27 |
KR101061850B1 (ko) | 2011-09-02 |
TWI404212B (zh) | 2013-08-01 |
US7662715B2 (en) | 2010-02-16 |
KR20060022839A (ko) | 2006-03-13 |
US7301170B2 (en) | 2007-11-27 |
JP5240964B2 (ja) | 2013-07-17 |
CN101552242B (zh) | 2012-02-01 |
JP2006080505A (ja) | 2006-03-23 |
US20080166827A1 (en) | 2008-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1761049B (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN1808710B (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN100444005C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
US8173492B2 (en) | Method of manufacturing thin film transistor substrate | |
CN1776513B (zh) | 薄膜晶体管阵列面板及其制造方法 | |
KR101122228B1 (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
US7851920B2 (en) | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating thin film transistor substrate | |
CN100524701C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN100413077C (zh) | 薄膜晶体管阵列面板 | |
CN100517734C (zh) | Tft阵列衬底的制造方法 | |
CN103941505B (zh) | 一种阵列基板及其制备方法和显示装置 | |
US20060044232A1 (en) | Organic light emitting diode display and manufacturing method thereof | |
US20070040954A1 (en) | Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate | |
US20060065892A1 (en) | Thin film transistor array panel and manufacturing method therefor | |
US10825840B2 (en) | Thin-film transistor panel | |
KR20110010274A (ko) | 어레이 기판 및 이의 제조방법 | |
CN100419552C (zh) | 薄膜晶体管阵列面板 | |
KR20080076459A (ko) | 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의 제조방법 | |
EP1970957A2 (en) | Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof | |
CN100590499C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN100543927C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
CN1862789B (zh) | 包括多层薄膜的薄膜晶体管阵列面板以及制造该面板的方法 | |
KR20110053721A (ko) | 어레이 기판 및 이의 제조방법 | |
JP2000029071A (ja) | 表示装置用アレイ基板、及びその製造方法 | |
US20060054889A1 (en) | Thin film transistor array panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MONITOR CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121030 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121030 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220901 Address after: 9-2, Guangdong Province, Shenzhen Guangming Tang Ming Road Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: SAMSUNG DISPLAY Co.,Ltd. |