CN101432870A - 两面电极结构的半导体装置及其制造方法 - Google Patents

两面电极结构的半导体装置及其制造方法 Download PDF

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CN101432870A
CN101432870A CNA2007800151245A CN200780015124A CN101432870A CN 101432870 A CN101432870 A CN 101432870A CN A2007800151245 A CNA2007800151245 A CN A2007800151245A CN 200780015124 A CN200780015124 A CN 200780015124A CN 101432870 A CN101432870 A CN 101432870A
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wiring
package substrate
double
semiconductor device
lsi chip
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CN101432870B (zh
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石原政道
大冈文彦
猪野好彦
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Lapis Semiconductor Co Ltd
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Oki Electric Industry Co Ltd
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Abstract

本发明涉及两面电极结构的半导体装置及其制造方法。在本发明中，在由进行多层布线的多层有机衬底构成的封装衬底上形成凹部，将LSI芯片收存到该凹部内。在将与该多层布线连接的LSI芯片进行密封后的树脂的上表面进行布线，将该布线与在封装衬底的正面连接到多层布线的端子用布线、以及树脂上表面的外部连接用的正面凸起电极连接。在封装衬底的背面侧形成与多层布线连接的外部连接用的背面凸起电极。

Description

两面电极结构的半导体装置及其制造方法
技术领域
本发明涉及能够在便携电话、数码照相机等小型电子设备或小型机器人、小型传感器中使用的两面电极结构的半导体装置及其制造方法。
背景技术
随着LSI芯片的高集成化，也强烈要求封装尺寸的缩小化，从而提出各种安装封装结构。近年来，广泛地进行在半导体裸芯片上形成贯通电极并进行层叠的开发。另一方面，今后实际尺寸的两面电极封装也能够产品化的可能性较高。在任意的技术中，现有的两面电极封装需要贯通电极结构(参照专利文献1)，但是，目前的贯通孔的绝缘方法在高温下进行处理，因此应用到半导体的安装工艺是困难的。这样，针对半导体衬底的贯通孔的形成和该绝缘方法中还残留技术问题，优选不需要贯通电极而进行布线。
专利文献2中，在引线框型的两面电极封装中，以引线框使其上下贯通，但是，下表面和上表面的电极配置相同，无上下连接的灵活性。
专利文献3中，在BGA型的两面电极封装中，设置贯穿衬底的电极，从而形成两面电极结构。但是，上表面的电极配置部是贯通部本身，在与上部连接IC的连接图形中没有灵活性。
专利文献4中，在衬底上形成突起电极，公开了两面电极结构，但是，完全没有该突起电极形成方法或连接方法等的具体公开。此外，还公开了上表面的重新布线，但是，对于该方法来说，仅公开了以上表面电镀形成低电阻金属膜并使用光刻法进行图形形成的现有方法，可以说在成本上具有很大的问题。
专利文献1：特开2001-127243号公报
专利文献2：特开2003-249604号公报
专利文献3：特开2005-235824号公报
专利文献4：特开2002-158312号公报
发明内容
本发明目的在于，解决这样的问题，能够任意地在衬底上表面进行重新布线，将容易地进行与上部IC的连接的两面电极封装变薄，并且能够以低成本制造。
此外，本发明的目的在于，不仅能够简单地将多个芯片内置在一个衬底中，而且在衬底上部及下部的任意处取出任意数量的布线，使与上部连接IC的连接图形具有灵活性性。
本发明的两面电极结构的半导体装置中，在由进行多层布线的多层有机衬底构成的封装衬底上形成凹部，将LSI芯片收存到该凹部内。在安装于封装衬底的凹部内并与多层布线连接的LSI芯片的周围以及上面注入树脂并进行密封，直到与封装衬底的最上面相同高度。在该封止后的树脂的上表面进行布线，并且，将该布线与在封装衬底的正面连接到多层布线的端子用布线、以及树脂上表面的外部连接用的正面凸起电极连接。在封装衬底的背面侧，形成与多层布线连接的外部连接用的背面凸起电极。
在封装衬底的凹部形成台阶差部，在该台阶差部形成与上述多层布线连接的端子用布线，将该端子用布线作为接合线连接电极，与形成于LSI芯片的上表面的电极连接。在封装衬底的凹部底部的最上层，形成与多层布线连接的金属焊盘部，将该金属焊盘部与朝下配置的LSI芯片的上表面电极进行倒装连接。在安装在封装衬底的凹部内的LSI芯片的周围及上表面，以树脂密封面与封装上表面成为同一平面的方式注入树脂，直到与封装衬底的最上面相同高度，由此，进行树脂的封止。树脂上表面的布线通过使用了金属粒子的喷墨方式或者丝网印刷来进行。作为金属粒子，可以使用铜粒子，在此情况下，实施使用了原子状氢的还原。
此外，在本发明的两面电极结构的半导体装置的制造方法中，在封装衬底上形成凹部，并且在该凹部内收存LSI芯片，该封装衬底是在多层有机衬底上进行多层布线、并且在该衬底的正面及背面分别将端子用布线连接到所述多层布线而构成的。在安装于所述封装衬底的凹部内并与所述多层布线连接的LSI芯片的周围以及上表面注入树脂进行密封，直到与封装衬底的最上面相同的高度。在所述树脂的上表面，形成与所述封装衬底的正面的端子用布线连接的布线，并且，在该布线的前端形成外部连接用的正面凸起电极。形成与所述封装衬底的背面的所述端子用布线连接的外部连接用的背面凸起电极。
根据本发明，不是侧面布线、也不是内部连接，而对封装衬底进行研究，也能够容易地将高密度的两面电极封装较薄且低成本制造出来。
此外，根据用本发明，不仅能够简单地将多个芯片内置于一个衬底中，而且能够在衬底上部以及下部的任意处取出任意数量的布线，能够任意地对衬底上表面进行重新布线，能够在与上部连接IC的连接中具有灵活性。
附图说明
图1是对本发明的两面电极结构的半导体装置(有机衬底型两面电极封装)进行例示的图。
图2是封装衬底的剖面图(A)以及立体图(B)。
图3是说明封装衬底的制造的一例的图。
图4是说明粘结LSI芯片的芯片焊接的图。
图5是说明多层有机衬底和LSI芯片的引线接合的图。
图6是以树脂将腔部进行封止后的状态的剖面图(A)及立体图(B)。
图7是说明模型正面的重新布线的图。
图8是说明凸起电极的连接的图。
图9是对与图1(B)不同的布线图形进行例示的平面图。
图10是用作铜布线清洗装置的处理装置的剖面的概略图。
具体实施方式
以下，根据例示来说明本发明。图1是将本发明的两面电极结构的半导体装置(有机衬底型两面电极封装)进行例示的图，(A)是示出将LSI芯片收存到封装衬底内并进行引线接合后的状态的从上方观察的立体图，(B)是在树脂密封后进行重新布线并且形成外部连接用的凸起而完成的状态下所示的从上方观察的立体图。
由进行多层布线后的多层有机衬底构成的封装衬底，如图1(A)所示，形成有用于部分地收存LSI芯片的凹部以及凹部周围的台阶差部。除了背面侧及正面侧，在与凹部底面以及台阶差部分别相同的面上具备多层有机衬底的布线层。在图中，将正面侧的布线层表示为端子用布线。同样地，也在多层有机衬底的背面侧、凹部底面(倒装连接用)以及台阶差部(引线接合用)上设置端子用布线。对于与多层有机衬底的布线层连接的台阶差部上表面的金属焊盘部(端子用布线)来说，作为接合线连接电极，利用Au引线与形成在LSI芯片的上表面的电极连接。或者，对于LSI芯片来说，将其向下配置的上表面电极与凹部底部的最上层金属焊盘部(端子用布线)进行倒装连接。并且，在引线接合连接的情况下，不一定需要凹部底部的布线层，但是，即使在芯片焊接部存在布线，在其上涂敷绝缘层，或者使用绝缘性的芯片焊接材料，从而在芯片焊接中没有障碍。
如图1(B)所示，在引线接合后，为了不受来自外界的应力、污染的影响，利用环氧树脂进行密封。在安装在多层有机衬底的凹部内的LSI芯片的周围以及上表面(腔部)，以该树脂密封面与封装上表面变得平坦(同一平面)的方式注入树脂，直到与封装衬底的最上面为相同高度，由此，进行该树脂密封。之后，在模型正面，进行连接到在封装衬底的最上面形成的端子用布线的布线(重新布线)。对于从封装衬底上表面延伸的该布线来说，利用使用了金属纳米粒子(特别是，铜纳米粒子)的喷墨方式或者丝网印刷，延长到树脂面。在延长到该树脂面的布线的前端，形成作为外部连接用端子的凸起电极(连接突起)。该凸起电极不仅形成在正面，也形成在背面。而且，如图1(B)所示，以使凸起电极配置为等间隔的目的，不使重新布线延长到树脂面，而在封装衬底内延长，在其延长端形成凸起电极。并且，为了保持上下连接强度，设置不连接到任意处的多余的凸起电极。
其次，参照图2～图8，进一步对上述两面电极结构的半导体装置(有机衬底型两面电极封装)的制造工序的详细情况进行说明。首先，对在本发明的半导体装置中所使用的封装衬底进行说明。图2为封装衬底的剖面图(A)以及立体图(B)。封装衬底由进行多层布线后的多层有机衬底构成，形成有用于部分地收存LSI芯片的凹部、和该凹部周围的台阶差部。多层有机衬底具有如下等特征：用纯的金属(铜)导体形成电路，所以，电阻较小，此外，用有机树脂形成绝缘层，因此介电常数较小，并且在轻量化上是优良的。除了在背面侧及正面侧，在分别与凹部底面及台阶差部相同的面具备多层有机衬底的布线层(包括端子用布线)。图2(B)的端子用布线表示正面侧布线层。示例了矩形凹部的内周四边全部具备设置了用于与LSI芯片进行布线连接的端子用布线的台阶差部，但是，不一定需要在四边全部设置。而且，图示的有机衬底型两面电极封装中，将收存半导体芯片的凹部形成侧称为正面，将其相反侧称为背面。
对于多层有机衬底来说，在由多层构成的衬底的各层，分别形成布线图形，并且根据需要形成用于连接各层的布线图形的通孔。在该通孔的内部形成导体层，该导体层与在下表面侧所形成的端面电极部即焊环连接。并且，使焊料材料附着在该焊环上，形成外部连接用的凸起电极。
其次，参照图3对上述封装衬底的制造的一例进行说明。首先，在图3(A)中，在由玻璃环氧树脂形成的有机树脂绝缘层(衬底)的上下两面形成铜箔，该铜箔用于形成金属导体。例如，能够以化学电镀法形成该铜箔。
在图3(B)中，使用激光选择性地进行开孔(通孔)加工，形成应该进行绝缘层的三维连接的部分、即将在以后工序(D)中所形成的上下两面的布线图形彼此连接的通孔部。
在图3(C)中，在进行通孔内的残渣去除(去钻污)之后，利用铜电镀填充通孔内部。
在图3(D)中，对上下两面的铜箔形成布线图形。这是例如对绝缘层上的铜箔涂敷光致抗蚀剂，以曝光来转印图形，并经过显影、刻蚀、抗蚀剂去除等工序而形成。
在图3(E)中，分别在上下对有机树脂绝缘层(玻璃环氧树脂)进行层压(层状加工)，并在各自之上形成铜箔。
在图3(F)中，对新形成的有机树脂绝缘层(玻璃环氧树脂)的两层，进一步使用激光进行成为通孔部的孔(通孔)的开孔。
在图3(G)中，在进行通孔内的残渣去除(去钻污)之后，利用铜电镀填充通孔内部。并且，对上下两层铜箔形成布线图形，完成四层(布线层)衬底。
其次，如图4所示，粘结LSI芯片(芯片焊接)。LSI芯片利用绝缘性的芯片焊接材料粘结到在多层有机衬底上所形成的凹部底面。例示了一个LSI芯片，但是，如参照图9(B)后述的那样，也能够内置多个芯片。
其次，如图5所示，对多层有机衬底和LSI芯片进行引线接合。在多层有机衬底的凹部侧壁部的台阶差部上表面，形成金属焊盘部(端子用布线)，该金属焊盘部与多层布线层连接。成为该接合线连接电极的金属焊盘部与形成在LSI芯片的上表面的电极由Au引线连接。此外，该引线接合后的状态相当于参照图1(A)如上所述的内容。
或者，也能够利用各向异性导电性树脂粘结等，与凹部底部的最上层的金属焊盘部进行倒装连接。在倒装连接的情况下，芯片焊接与电极连接同时形成。在倒装连接的情况下，使LSI形成面朝下进行连接，由此，朝下LSI芯片的上表面电极通过包括多层有机衬底凹部底部的最上层的金属焊盘部的布线图形进行连接。而且，在倒装连接的情况下，不一定需要封装衬底的台阶差部以及设置在该台阶差部上的布线层。
图6是以树脂将腔部进行密封后的状态的剖面图(A)及立体图(B)。在引线接合后，为了不受来自外界的应力、污染的影响，利用环氧树脂进行密封。在安装于多层有机衬底的凹部内的LSI芯片的周围及上表面(腔部)，以该树脂密封面与封装上表面变得平坦(同一平面)的方式注入(浇铸)树脂，直到与封装衬底的最上面相同的高度，由此，进行该树脂密封。
其次，如图7所示，在注入树脂后的模型正面，进行连接到形成于封装衬底最上面的金属焊盘部(端子用布线)的布线(重新布线)。从封装上表面延伸的该布线，利用使用了金属纳米粒子(特别是铜纳米粒子)的喷墨方式或丝网印刷，延长到树脂面。以在印刷机中应用有机溶剂中所含的纳米铜金属粒子的喷墨法描画所希望的图形后，进行使有机溶剂蒸发的热处理。或者，在丝网印刷法的情况下，以丝网印刷法将在有机溶剂中含有纳米铜金属粒子的纳米膏(nano-paste)涂敷在衬底上之后，进行加热烧结，由此，形成电路布线。以铜纳米粒子实施上表面的布线的情况下，实施使用了原子状氢的还原，去除铜布线的由有机溶剂所导致的污染或氧化物，该详细内容后述。
图8是在连接了凸起电极的状态下示出的图。在延长到上述树脂面的布线的前端，形成作为外部连接用端子的凸起电极(连接突起)。该凸起电极不仅形成在正面，也形成在背面。对正面的凸起电极的形成来说，在重新布线后，涂敷(形成绝缘膜)阻焊剂，之后对凸起部进行开口，也能够在该位置形成。根据以上的工序，作为有机衬底型两面电极封装的制造完成。
图9(A)(B)分别是对与图1(B)不同的布线图形进行例示的平面图。图9(A)表示将一个LSI芯片收存在一个封装衬底内的例子，此外，图9(B)表示将两个LSI芯片收存在一个封装衬底内的例子。
以上，将仅一个两面电极封装的制造进行了例示说明，但是，实际上在纵横地连接有多个的状态下进行制造，如图8所示，在表面背面凸起电极形成工序后，为了进行单片化，对两面电极封装进行切断。
如上所述，在以铜纳米粒子实施上表面的布线的情况下，实施使用了原子状氢的还原，在室温以上且200℃以下的低温下去除铜布线的由有机溶剂所导致的污染或氧化物，以下对此进行说明。
(1)用喷墨法形成铜布线。
在有机溶剂中含有纳米铜金属粒子，利用在印刷机中对其进行应用的喷墨法描画所希望的图形。之后，进行使有机溶剂蒸发的热处理。
本发明中，对这样形成的铜布线去除由有机溶剂所导致的污染或氧化物。在进行使有机溶剂蒸发的热处理的情况下，由于铜的表面氧化而形成氧化铜，但是，这也能够利用之后的原子状氢处理去除。或者，本发明也能够应用于不进行使有机溶剂蒸发的热处理的情况。在不进行热处理的情况下，成为含有有机溶剂的状态，但是，利用之后进行的原子状氢处理，也能够去除有机溶剂。
(2)其次，在铜布线清洗装置中，以原子状氢或氨分解种类(ammonia-decomposed-species)去除铜氧化物及有机溶剂污染物。
图10是用作铜布线清洗装置的处理装置的剖面的概略图。作为原子状氢或氨分解种类的原料，将氢、氨、联氨等包括氢的原料从反应室的上表面的气体流入口，通过清洗气体供给机构而送入。
在反应室外的正下部设置加热器等的衬底加热机构，在该加热机构正上方的反应室内的样品台上，使覆盖面朝上地设置样品(衬底)。在使来自气体流入口的气体扩散的喷头和样品的中间，设置例如由钨线构成的催化剂，利用催化剂加热机构将该催化剂加热到高温，使所流入的气体分解。由此，利用由加热催化所引起的接触分解反应，产生原子状氢或氨分解种类。利用原子状氢的还原去除铜布线的氧化物，利用原子状氢和碳的反应形成碳化氢(hydrocarbon)，由此，去除有机污染物。
作为含有原子状氢或氨分解种类的原料即上述氢的化合物，能够使用也包括氮的化合物、例如氨、联氨。此时，使该化合物气体与被加热后的催化剂接触，由此，与原子状氢同时产生原子状氮，与由原子状氢所导致的金属表面氧化膜的还原以及/或者有机物的去除一起，能够利用原子状氮进行金属表面的氮化处理。
作为催化剂材料，除了上述的钨以外，也能够使用钽、钼、钒、铼、铂、钍、锆、钇、铪、钯、铱、钌、铁、镍、铬、铝、硅、碳的任意一种材料、这些材料的单质的氧化物、这些材料的单质的氮化物、这些材料(碳除外)的单质的碳化物、由从这些材料选择的两种以上构成的混晶或化合物的氧化物、由从这些材料选择的两种以上构成的混晶或化合物的氮化物、或者由从这些材料(碳除外)选择的两种以上构成的混晶或化合物的碳化物的任意一种。此外，对于催化剂的温度来说，例如，在钨催化剂的情况下，1000℃到2200℃的温度范围是合适的。
并且，对于图10中的原料供给机构来说，根据需要，例如，用于提供为了堆积SiN系膜而使用的六甲基二硅胺烷(hexamethyldisilazane)或硅烷等。此外，真空系统用于排出反应残余气体。
使用这样的铜布线清洗装置，作为样品(衬底)，在样品台上设置形成有使用了纳米铜金属粒子的构图布线的晶片(将多个封装纵横地连接的状态)或者进行单片化后的封装衬底。并且，为了去除由使用了纳米铜金属粒子的布线所导致的污染，以流量为30sccm流入氢气10分钟，通过该处理进行污染的去除。

Claims (10)

1.一种两面电极结构的半导体装置，其中，
在由进行多层布线的多层有机衬底构成的封装衬底上形成凹部，在该凹部内收存LSI芯片，
在安装于所述封装衬底的凹部内并与所述多层布线连接的LSI芯片的周围以及上表面，注入树脂进行密封，直到与封装衬底的最上面相同的高度，
在该进行密封的树脂的上表面进行布线，并且，使该布线与在所述封装衬底的正面连接到所述多层布线的端子用布线、以及树脂上表面的外部连接用的正面凸起电极连接，
在所述封装衬底的背面侧，形成与所述多层布线连接的外部连接用的背面凸起电极。
2.如权利要求1的两面电极结构的半导体装置，其特征在于，
在所述封装衬底的凹部形成台阶差部，在该台阶差部形成与所述多层布线连接的端子用布线，将该端子用布线作为接合线连接电极，与在LSI芯片的上表面形成的电极连接。
3.如权利要求1的两面电极结构的半导体装置，其特征在于，
在所述封装衬底的凹部底部的最上层，形成与所述多层布线连接的金属焊盘部，将该金属焊盘部与朝下配置的LSI芯片的上表面电极进行倒装连接。
4.如权利要求1的两面电极结构的半导体装置，其特征在于，
所述树脂上表面的布线通过使用了在有机溶剂中含有的金属粒子的喷墨方式或者丝网印刷来进行。
5.如权利要求4的两面电极结构的半导体装置，其特征在于，
所述金属粒子是铜粒子，并且，实施使用了原子状氢的还原。
6.一种两面电极结构的半导体装置的制造方法，具有如下步骤：
在封装衬底上形成凹部，并且在该凹部内收存LSI芯片，该封装衬底是在多层有机衬底上进行多层布线、并且在该衬底的正面及背面分别将端子用布线连接到所述多层布线而构成的，
在安装于所述封装衬底的凹部内并与所述多层布线连接的LSI芯片的周围以及上表面，注入树脂进行密封，直到与封装衬底的最上面相同的高度，
在所述树脂的上表面，形成与所述封装衬底的正面的端子用布线连接的布线，并且，在该布线的前端形成外部连接用的正面凸起电极，
形成与所述封装衬底的背面的所述端子用布线连接的外部连接用的背面凸起电极。
7.如权利要求6的两面电极结构的半导体装置的制造方法，其特征在于，
在所述封装衬底的凹部形成台阶差部，在该台阶差部形成与所述多层布线连接的端子用布线，将该端子用布线作为接合线连接电极，与在LSI芯片的上表面形成的电极连接。
8.如权利要求6的两面电极结构的半导体装置的制造方法，其特征在于，
在所述封装衬底的凹部底部的最上层，形成与所述多层布线连接的金属焊盘部，将该金属焊盘部与朝下配置的LSI芯片的上表面电极进行倒装连接。
9.如权利要求6的两面电极结构的半导体装置的制造方法，其特征在于，
所述树脂上表面的布线通过使用了在有机溶剂中含有的金属粒子的喷墨方式或者丝网印刷来进行。
10.如权利要求9的两面电极结构的半导体装置的制造方法，其特征在于，
所述金属粒子是铜粒子，并且，实施使用了原子状氢的还原。
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CN110494995B (zh) * 2017-03-21 2024-03-08 Lg 伊诺特有限公司 半导体元件封装和自动聚焦装置

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US20110089551A1 (en) 2011-04-21
KR20080102271A (ko) 2008-11-24
CN101432870B (zh) 2011-08-10
US7884466B2 (en) 2011-02-08
US20090072381A1 (en) 2009-03-19
KR101161572B1 (ko) 2012-07-04
JP3942190B1 (ja) 2007-07-11
WO2007125744A1 (ja) 2007-11-08

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