CN101401197A - 电子元器件模块 - Google Patents
电子元器件模块 Download PDFInfo
- Publication number
- CN101401197A CN101401197A CNA2007800081204A CN200780008120A CN101401197A CN 101401197 A CN101401197 A CN 101401197A CN A2007800081204 A CNA2007800081204 A CN A2007800081204A CN 200780008120 A CN200780008120 A CN 200780008120A CN 101401197 A CN101401197 A CN 101401197A
- Authority
- CN
- China
- Prior art keywords
- electronic component
- braze
- components
- component module
- electronic devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000000463 material Substances 0.000 claims abstract description 70
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 238000005219 brazing Methods 0.000 claims description 58
- 229910017944 Ag—Cu Inorganic materials 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 25
- 239000010936 titanium Substances 0.000 description 21
- 239000010949 copper Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 230000004087 circulation Effects 0.000 description 9
- 238000009940 knitting Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000000007 visual effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005382 thermal cycling Methods 0.000 description 7
- 229910017945 Cu—Ti Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0133—Ternary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
- Ceramic Products (AREA)
Abstract
本发明的电子元器件模块1具备将陶瓷基板3的两个表面分别与金属板5、7进行接合的电路基板2、以及与电路基板2的至少一个金属板5接合、且至少能够在125℃下工作的电子元器件9。电子元器件9通过由熔点比电子元器件9的使用温度高的钎焊料构成的钎焊料层8与金属板5进行接合。
Description
技术领域
本发明涉及一种电子元器件模块。
背景技术
作为对电动汽车和电气列车等的大电流进行控制的元器件,使用大功率半导体模块。另外,在利用废热进行发电的装置、半导体工艺中的恒温装置、电子器件的冷却装置等中使用热电变换模块。这些电子元器件模块中,作为安装大功率半导体元件和热电元件的基板,采用将陶瓷基板的两个表面分别与金属板的电路基板进行接合(参照专利文献1、2)。
例如,在电路基板的一个金属板上,钎焊大功率半导体元件或热电元件等电子元器件,另一个金属板被钎焊固定于称为基板的金属板或复合板上。另外,用铜那样的导电性良好的电极块夹着薄型半导体元件,以气密封结构构成周围,同时从电极块的外侧加压,使多个电子元器件一体化,这样的结构等也是众所周知的(参照专利文献3)。
当构成大功率半导体模块或热电变换模块的电子元器件为Si元件或温度调节用的热电元件时,由于它们的最高使用温度为125℃左右,因此即使通过使用已有的含铅钎焊料进行钎焊或压接来固定,也足以承受均匀加热或热循环(例如室温~125℃)。
但是,在今后的大功率半导体模块或热电变换模块中,存在如下问题。例如在用SiC元件那样的高温工作型的宽禁带半导体单晶元件代替Si元件时,为了使其特性充分发挥,必须使其在300~500℃的高温环境下工作。在用已有的钎焊方法将在高温环境下工作的SiC元件固定于电路基板上时,在SiC元件的工作温度下与电路基板的固定状态不稳定,会导致SiC元件的剥离等。
在使用能够在高温环境下工作的热电变换模块时,能够从例如自汽车或工厂等排出的500℃左右的高温废热中取得电能,可望减小环境的负荷。但是,与大功率半导体模块一样,将高温环境下所使用的热电元件使用已有的钎焊料固定在电路基板上时,不能够稳定地保持热电元件在电路基板上的固定状态。在热电变换模块中,为了防止扩散和缓和应力,也采用在热电元件与电极之间夹入钛层等作为中间层的方法(参照专利文献4)。但是,在这里,由于使用喷镀法形成中间层和电极,因此在热电变换元件的制造上有困难。
为了改善如上所述的高温环境下的电子元器件的固定状况,考虑用高温钎焊料将SiC元件和热电元件等电子元器件与电路基板进行接合。但是近年来,提出了钎焊料无铅化的要求,将电子元器件钎焊于电路基板时,也要求使用不含铅的钎焊料。高温钎焊料不含铅要得到和以往相同的或更好的特性是困难的,因此用高温钎焊料将SiC元件和热电元件等电子元器件与电路基板进行接合实质上是困难的。
进一步地,半导体元件和热电元件从成品率和可靠性考虑,元件尺寸被做得微细化,另外由于元件尺寸的微细化可以预料搭载的元件数目大幅度增加。因此,例如在大功率半导体模块中可以预料使用温度越来越高。随着大功率半导体模块的使用温度的增高,热循环变得更大,热变形和热膨胀差所造成的摇动也增大。从而,SiC元件等电子元器件容易从电路基板剥离,更加难以确保可靠性。
专利文献1:特开2002—201072公报
专利文献2:特开2002—203993公报
专利文献3:特开平10—098140号公报
专利文献4:特开2003—309294公报
发明内容
本发明的目的在于,提供一种能够通过抑制电子元器件从高温环境下的电路基板剥离从而提高可靠性的电子元器件模块。
本发明的形态所涉及的电子元器件模块,其特征在于,具备:电路基板,该电路基板包括具备第1主面和与第1主面相反侧的第2主面的陶瓷基板、与前述陶瓷基板的前述第1主面接合的第1金属板、及与前述陶瓷基板的前述第2主面接合的第2金属板,以及通过钎焊料层与前述第1和第2金属板的至少一个金属板进行接合、且至少能够在125℃下工作的电子元器件;前述钎焊料层由熔点比前述电子元器件的使用温度高的钎焊料构成。
附图说明
图1所示为本发明第1实施方式的电子元器件模块的结构的剖视图。
图2所示为本发明第2实施方式的电子元器件模块的结构的剖视图。
图3所示为采用本发明第2实施方式的电子元器件模块的热电变换模块的一个例子的剖视图。
图4所示为采用本发明第2实施方式的电子元器件模块的热电变换模块的另一个例子的剖视图。
符号说明
1 电子元器件模块
2 电路基板
3 陶瓷基板
4、6 接合层
5 第1金属板
7 第2金属板
8、10 钎焊料层
9 电子元器件
11 基板
20 热电变换模块
21 外壳
22 电极
23 导线
24 绝缘物质
具体实施方式
以下对实施本发明用的实施方式进行说明。
图1表示本发明第1实施方式的电子元器件模块。图2表示本发明第2实施方式的电子元器件模块。这些图中所示的电子元器件模块1,具备含有陶瓷基板3作为绝缘基板的电路基板2。电路基板2具备通过接合层与陶瓷基板3的一个主面接合的第1金属板5、以及通过接合层6与另一个主面接合的第2金属板7。
第1金属板5具有作为电路板的作用。第2金属板7具有作为例如与基板接合的接合板或者作为放热板或吸热板的作用。通过钎焊料层8将第1金属板5与电子元器件9进行接合。钎焊料层8由熔点比电子元器件9的使用温度高的钎焊料构成。第2金属板7通过由熔点比电子元器件9的使用温度高的钎焊料构成的钎焊料层10与基板11接合。
陶瓷基板3由例如氧化铝(Al2O3)烧结体、氮化铝(AlN)烧结体、氮化硅(Si3N4)烧结体、碳化硅(SiC)烧结体等陶瓷烧结体构成。在这些材料中,从具有高热传导率的观点来看,氮化铝烧结体比较适用。另外,从强度高,能够形成大面积基板的观点来看,氮化硅烧结体比较适用。
作为氮化铝烧结体,例如热传导率为180W/m·K以上的材料比较适用,200W/m·K以上的材料更加适用。作为这样的氮化铝烧结体,例如日本专利特开2002—201072公报所述,例示了调整由氮化铝颗粒的粒径与烧结助剂构成的晶界相的比例,使在直线距离50μm所包含的氮化铝晶粒数目为15~30个,使热传导率在200W/m·K以上的材料。
作为氮化硅烧结体,例如热传导率65W/m·K以上的材料比较适用,85W/m·K以上的材料则更加适用。作为这样的氮化硅烧结体,有例如烧结后的炉冷温度采用100℃/小时的条件,使氮化硅烧结体中的晶界相的20%以上(相对于全部晶界相的比例)结晶化的氮化硅烧结体。
作为第1及第2金属板5、7,采用例如选自铜及铝的至少一种作为主要成分的金属板。这些金属板5、7的厚度最好是调整成第1金属板5的厚度t1与第2金属板7的厚度t2之比((t1/t2)×100[%]%)为50%以上且200%以下的范围。
若金属板5、7的厚度比(t1/t2比)未满50%或超过200%,则不管在哪一种情况下,将陶瓷基板3与第1金属板5和第2金属板7接合所得到的电路基板2的挠度变大,用于接合电子元器件9或基板11的钎焊料层8、10难以涂布成均匀的厚度。因此,例如在接合多个电子元器件9时难以将这些元器件均匀地接触配置于电路基板2上,有可能会得到没有充分接合的电子元器件9。
通过使第1金属板5与第2金属板7的厚度之比设置为50%以上且200%以下,能够使电路基板2的挠度在例如电路基板2的大小为60mm×60mm以下时为15μm以下。从而,能够将钎焊料层8、10涂布为均匀的厚度。当电子元器件9有多个时,能够将它们一并合适地与电路基板2接触并配置接合。从进一步减小电路基板2的挠度的观点来看,金属板5、7的厚度比(t1/t2比)优选为75%以上且150%以下的范围,进一步优选为100%左右。这样的金属板5、7的厚度比,特别在使用环境温度为200℃以上时是合适的。
陶瓷基板3与第1及第2金属板5、7之间通过例如接合层4、6接合。此外,接合层4、6并不一定需要。也可不通过接合层4、6将陶瓷基板3与第1及第2金属板5、7直接接合。此时,接合层4、6的形成可省略。
陶瓷基板3与第1及第2金属板5、7之间采用公知的直接接合法(DBC法或DBA法等)、活性金属接合法、钎焊材料接合法等进行接合。作为使用于活性金属接合法的活性金属,有例如Ti、Zr、Hf等。也可只使用这些金属中的一种,或者也可2种以上并用。通过采用使用这样的活性金属的活性金属接合法,能够牢固地将陶瓷基板3与第1及第2金属板5、7进行接合。
第1金属板5和陶瓷基板3接合的面的相反侧的第1金属板面与电子元器件9通过钎焊料层8进行接合。如此地,将电子元器件9搭载于电路基板2。电子元器件9为至少能在125℃温度下工作的元器件,例如SiC半导体元件(使用SiC单晶的半导体元件)或热电变换元件等。电子元器件9只要能够在125℃以上的温度下工作即可,也可为以往所使用的硅元件、电阻元件、电容元件等。
电子元器件9由于125℃以上工作环境温度所引起的热循环(温度差)变大,因此难以确保其可靠性及特性等。当使用如SiC元件的宽禁带半导体元件时,为使其特性充分发挥,必须使其在300℃~500℃这样的高温下工作。一旦在高温下工作,热循环变大,因此电子元器件模块1的各部分的热变形和热膨胀率之差所造成的负荷增大,难以确保可靠性。再有,由于元件尺寸微细化造成元件的搭载数目增加时,使用温度变得越来越高,使各部分的热变形和热膨胀差所造成的负荷进一步加大。
在本实施方式的电子元器件模块1中,钎焊料层8采用熔点比电子元器件9的使用温度高的钎焊材料,因此能够抑制至少能在125℃下工作的电子元器件9的剥离和特性劣化等。例如,电子元器件9为硅元件等时,由于硅元件的最高使用温度为125℃左右,因此通过采用熔点比硅元件的最高使用温度(125℃)高的钎焊料,能够抑制在使用时的电子元器件9的剥离和劣化。从而,可提高电子元器件模块1的可靠性和特性。
进一步地,当电子元器件9为SiC元件或高温工作型的热电元件时,他们的工作环境温度在300℃以上。钎焊料层8采用熔点比SiC元件和热电元件等电子元器件9的工作环境温度(300℃以上)高的钎焊料,以此能够抑制在高温环境下使用时电子元器件9的剥离和劣化。从而,可提高电子元器件模块1的可靠性和特性。作为热电元件例示日本专利特开2005—286229公报等记载的Half-Heusler系化合物。若为这样的热电元件,即使在300℃以上的环境温度下也能够使用。
本实施方式的电子元器件模块1适用于至少能在125℃下工作的电子元器件9。特别地,将能在300℃以上的环境温度下工作的电子元器件9模块化时,本实施方式的电子元器件模块1是适用的。此外,电子元器件9作为构成钎焊料层的钎焊料的熔点的基准的使用温度,当其为硅元件等一般性的电子元器件9时,表示最高使用温度,当其为SiC元件和热电元件等高温工作型的电子元器件9时,表示工作环境温度。
第2金属板7和陶瓷基板3接合的面的相反侧的第2金属板面与基板11通过钎焊料层10进行接合。作为基板11,例如选自铜和铝的至少一种为主要成分的基板较为合适。对于这样的基板11,由于通过由熔点比电子元器件9的使用温度高的钎焊料构成的钎焊料层10与第2金属板7进行接合,因此能够抑制电子元器件模块1使用时的基板11的剥离。
从充分确保电子元器件模块1的散热性的观点来看,优选第2金属板7与基板11进行接合。但是,若不接合基板11也能够确保充分的散热性,则也不一定要接合基板11。此时,第2金属板7起到作为散热板的作用。
钎焊料层8形成于第1金属板5上与电子元器件9接合的部分。同样地,钎焊料层10形成于第2金属板7上与基板11接合的部分。钎焊料层8、10至少必须在那样的部分形成,但也可在不妨碍绝缘性等的范围内形成于其它部分。
钎焊材料层8、10由熔点比电子元器件9(电子元器件模块1)的使用温度高的钎焊料构成。通过使用这样的钎焊料层8、10来接合电子元器件9和基板11,能够抑制电子元器件模块1使用时的钎焊料层8、10的软化,进一步地能够抑制电子元器件9和基板11的剥离等。再有,由于第1金属板5与电子元器件9之间的热膨胀差所造成的热应力得到缓和,因此能够抑制电子元器件9的剥离和特性劣化等。以此,可提供可靠性和工作特性等优异的电子元器件模块1。
由于电子元器件模块1具备至少能在125℃下工作的电子元器件9,因此构成钎焊料层8、10的钎焊料的熔点必须至少高于125℃。通过使用具有这样的熔点的钎焊料,可充分提高采用最高使用温度为125℃左右的硅元件等电子元器件9的电子元器件模块1的可靠性和工作特性等。
当电子元器件9为SiC元件时,其工作环境温度为300~500℃。因此,构成钎焊料层8、10的钎焊料的熔点必须高于SiC元件的工作环境温度(300℃以上)。进一步地,当电子元器件9为高温工作型热电元件时,遭受例如500℃左右的高温废热。因此,构成钎焊料层8、10的钎焊料的熔点必须高于热电元件遭受的高温环境温度。此外,电子元器件模块1不根据电子元器件9的种类,只须用熔点比电子元器件模块1的实际使用温度高的钎焊料构成钎焊料层8、10即可。
作为构成钎焊料层8、10的钎焊料,例示具有共晶组织的Ag-Cu系钎焊料和Al系钎焊料。这些钎焊材料中,也是具有600℃以上熔点的Ag-Cu系钎焊料和Al系钎焊料较为合适。通过使用这样的Ag-Cu系钎焊料或Al系钎焊料,不但在电子元器件9的最高使用温度为125℃左右时,即使是作为电子元器件9采用例如工作环境温度为300℃以上的SiC元件和高温工作型热电元件时,也能够抑制电子元器件9和基板11从电路基板2的剥离、电子元器件9的特性劣化等。
进一步地,通过使用Ag-Cu系钎焊料或Al系钎焊料等,能够容易地实现电子元器件模块1的无铅化。在使用Ag-Cu系钎焊料和Al系钎焊料等时,不必为了提高钎焊料的浸润性能而进行镀层处理,因此能够力图减少电子元器件模块1的制造工序数。
作为Ag-Cu系钎焊料,优选Ag及Cu两个元素的总含量为85质量%以上且具有导电性。若Ag及Cu两个元素的总含量未满85质量%,则第1金属板5与电子元器件9之间的接合或第2金属板7与基板11之间的接合可能变得困难。另外,即使接合本身能够实现,也可能发生孔隙等,从而降低接合强度。
Ag-Cu系钎焊料,具体来讲,优选Ag及Cu两个元素的总含量为85质量%以上,还含有选自Ti、Zr及Hf的至少一种,含量在1质量%以上且5质量%以下的范围内,其余具有由选自Sn及In的至少一种构成的成分。优选Ag和Cu的比例为,在将Ag和Cu的总含量设为100质量份时,Cu的比例为10~35质量份的范围,其余为Ag,特别地,若采用满足共晶组织的比例则更加理想。
通过在Ag-Cu系钎焊料中包含选自Ti、Zr及Hf的至少一种,含量为1~5质量%的范围,能够使熔点提高,增加接合强度并且也可抑制孔隙的发生等。在Ag-Cu系钎焊料中,特别地,Ag和Cu两个元素的总含量为85质量%以上,Ti的含量为1质量%以上且5质量%以下的范围,其余为由Sn构成的成分较为合适。
作为Al系钎焊料,优选Al的含量为90质量%以上且具有导电性。若Al的含量未满90质量%,则第1金属板5与电子元器件9之间的接合、或第2金属板7与基板11之间的接合可能变得困难。另外,即使接合本身能够实现,也可能发生孔隙等,从而降低接合强度。
Al系钎焊料,具体来讲,优选Al含量为90质量%以上,含有选自钇和镧系元素等稀土元素的至少一种,含量为0.1质量%以上且3质量%以下的范围,其余具有由Si构成的成分。通过在Al系钎焊材料中包含0.1~3质量%的稀土元素,能够提高熔点,增加接合强度,也可抑制孔隙的发生等。在Al系钎焊料中,特别地,Al含量为90质量%以上和Y含量为0.1~3质量%,其余为由Si构成的成分较为合适。
接着对上述实施方式的电子元器件模块的制造方法进行说明。首先,在制造电子元器件模块1之前制造电路基板2。即,在陶瓷基板3的两主面上利用公知的接合方法接合第1金属板5和第2金属板7,制造电路基板2。
接着,在电路基板2的第1金属板5的表面上,至少在想要接合电子元器件9的部分,利用丝网印刷方法涂布熔点比电子元器件9的使用温度高的钎焊料的导电膏并使其干燥。另外,在第2金属板7的表面上,至少在想要接合基板11的部分,也利用例如丝网印刷方法涂布同样的钎焊料的导电膏并使其干燥。
进一步地,在第1金属板5和第2金属板7所涂布的钎焊料膏上,接触配置电子元器件9和基板11之后,将它们全部加热到钎焊料熔点温度,将第1金属板5与电子元器件9、以及第2金属板7与基板11进行接合,以此制造电子元器件模块1。此时,当电子元器件9有多个时,使它们全部一并在所涂布的钎焊料膏上接触,配置并接合。以此,可将多个电子元器件9在第1金属板5上全部一并均匀地进行接合。再有,基板11也可同时接合于第2金属板7。
接着对第1及第2实施方式的电子元器件模块1的具体例进行说明。图1所示的第1实施方式适合于在电路基板2上搭载Si元件或SiC元件等作为电子元器件9的电子元器件模块1。图1所示的电子元器件模块1为例如大功率半导体模块。电子元器件9优选例如能够在300℃的高温环境下工作的SiC元件。作为电子元器件9,即使采用Si元件或SiC元件等时,也可如图2所示,在电路基板2上搭载多个电子元器件9从而构成电子元器件模块1。
在作为电子元器件9搭载Si元件或SiC元件等半导体元件的电子元器件模块(大功率半导体模块)1中,通过采用熔点比电子元器件9的使用温度高的钎焊料层8、9,能够抑制电子元器件9和基板11从电路基板2的剥离、电子元器件9的特性劣化等。
进一步地,由于钎焊料层8、9所采用的Ag-Cu系钎焊料和Al系钎焊料可以做得比已有的钎焊料层厚度薄,因此可以减少与电路基板2之间的热阻。由Ag-Cu系钎焊料和Al系钎焊料构成的钎焊料层8、9的厚度为例如30μm以下,进一步地可以做成10μm以下。钎焊料层8、9的厚度优选为3μm以上。当钎焊料层8、9的厚度未满3μm时,可能无法得到充分的接合强度。通过这些手段,可提高大功率半导体模块1的热循环特性(TCT特性)。
图2所示的第2实施方式适合于在电路基板2上搭载热电元件作为电子元器件9的电子元器件模块1。电子元器件9优选为例如能够在300℃以上,进一步地能够在500℃左右的高温环境下工作的高温工作型热电元件。作为这样的热电元件的构成材料,例示具有MgAgAs型结晶结构的金属间化合物相为主相的热电材料(Half-Heusler材料)。图3中表示热电变换模块的具体结构。图3所示的热电变换模块20具有多个p型热电元件9A和多个n型热电元件9B。这些p型热电元件9A和n型热电元件9B在同一平面上交替配置,作为模块整体配置成矩阵状。
p型热电元件9A和n型热电元件9B配置于第1电路基板2A和第2电路基板2B之间。在1个n型热电元件9A和与其相邻的一个n型热电元件9B的下部,作为连接这些元件间的第1电极配置第1电路基板2A的第1金属板5A。另一方面,在一个p型热电元件11和与其相邻的一个n型热电元件12的上部,作为连接这些元件间的第2电极配置第2电路基板2B的第1金属板5B。作为第1电极的金属板5A与作为第2电极的金属板5B以只错开一个元件的状态配置。
如此地,将多个p型热电元件9A与多个n型热电元件9B在电气上串联连接。即,分别配置第1电极5A与第2电极5B使直流电流依序流入p型热电元件9A、n型热电元件9B、p型热电元件9A、n型热电元件9B…。p型热电元件9A及n型热电元件9B与电极(金属板)5A、5B之间,如上所述通过熔点比热电元件9A、9B的工作环境温度高的钎焊料层8接合。第1电路基板2A的第2金属板7A接合于基板11。
图3所示的热电变换模块20将第1电路基板2A配置于低温侧(L),同时将第2电路基板2B配置于高温侧(H)使用,使上下电路基板2A、2B之间存在温差。基于该温差,在第1电极5A与第2电极5B之间产生电位差,若在电极的终端连接负荷,则能够取出电力。如此,通过使用高温工作型热电元件9A、9B,能够将热电变换模块20作为发电装置使用。
在搭载热电元件9A、9B的热电变换模块20中,通过使用熔点比热电元件9A、9B的工作环境温度高的钎焊料层8,能够抑制热电元件9A、9B从电路基板2的剥离及特性劣化等。进一步地,优选将配置于高温层(H)的第1电极(第1电路基板2A的第1金属板5A)的厚度做得比配置于低温侧(L)的第2电极(第2电路基板的第1金属板5B)的厚度薄。以此,可进一步提高热电变换模块20的热循环特性(TCT特性)。特别地,能够提高高温侧(H)与低温侧(L)的温差为300℃以上,进一步地400℃以上的工作环境下的热循环特性等。
此外,热电变换模块20不限于将热变换为电能的发电用途,也可用于将电变换为热的加热用途。即,若使直流电流流入串联连接的p型热电元件9A与n型热电元件9B,会引起一侧的电路基板放热,另一侧的电路基板吸热。从而,通过在放热侧的电路基板上配置被处理体,能够对被处理体进行加热。例如,在半导体制造装置中,对半导体晶片实施温度控制,能够将热电变换模块20使用于这样的温度控制。
热电变换模块20如图4所示,也可以收纳于外壳21内使用。热电变换模块20与设置于外壳21的电极22通过导线23电气连接。在外壳21内充填绝缘物质24将热电变换模块20加以封装。作为绝缘物质24,适合使用例如硅凝胶等凝胶状封装物质。利用外壳21做成的封装结构不仅对于热电变换模块20,对于大功率半导体模块也有效。
接着通过制造实际如图2所示的电子元器件模块1,对于构成电子元器件模块1的钎焊料层8的钎焊料的熔点与成分、再有第1金属板5的厚度与第2金属板7的厚度之比对电子元器件模块1的接合性能、可工作温度的影响进行评价并叙述其评价结果。此外,这里采用在电子元器件模块1中不设置钎焊料层10及基板11的结构。
首先,如下所述制造作为评价对象的电子元器件模块。即准备纵向30mm×横向35mm×厚度0.32mm、热传导率为90W/m·K、3点弯曲强度为500Mpa左右的由Si3N4烧结体构成的陶瓷基板3。在该陶瓷基板3的两面上以15μm的厚度印刷包含活性金属的钎焊料,进一步地使第1金属板5和第2金属板7与各自的钎焊料接触,在1×10-3Pa的真空中进行800℃×10分钟的热处理使其接合。
在这里,第2金属板7的厚度t2为一定值0.25mm,第1金属板5的厚度t1与第2金属板7的厚度t2之比((t1/t2)×100[%])设定为表1所示的值。此外,作为第1金属板5及第2金属板7采用铜板。并且在第1金属板5上以规定形状印刷抗蚀剂,利用氯化铁溶液进行蚀刻处理形成电路布图后,去除抗蚀剂形成电路基板2。
接着,在第1金属板5的电子元器件9所接合的部分,以20μm的厚度印刷具有如表1所示的熔点及成分的钎焊料。此外,该印刷的部分的钎焊料形成钎焊料层8。另外,以表1所示Ag—Cu系钎焊料为主构成的Ag—Cu合金具有相对于Ag及Cu的总量,Cu的含量为28质量%的共晶组织。接合后的钎焊料层的厚度为10~15μm。
此后,在第1金属板5的印刷钎焊料的部分,依序使作为电路元器件9的p型热电元件(p型半导体元件)和n型热电元件(n型半导体元件)与其接触并配置,实施以800℃10分钟的热处理使其接合。热电元件的配置数目为72个。如此,得到具有如图2所示的结构的电子元器件模块1(不设置钎焊料层10和基板11)。
[表1]
试样No. | 金属板厚度之比[%] | 钎焊料(钎焊料层)的成分 | 钎焊料(钎焊料层)的熔点[℃] |
1 | 100 | Ag—Cu(95wt%)+Ti(5wt%) | 710~730 |
2 | 100 | Ag—Cu(80wt%)+Ti(4wt%)+余部Sn | 710~730 |
3 | 100 | Ag—Cu(85wt%)+Ti(4wt%)+余部Sn | 710~730 |
4 | 100 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
5 | 150 | Ag—Cu(85wt%)+Ti(4wt%)+余部Sn | 710~730 |
6 | 100 | Ag—Cu(50wt%)+Ti(4wt%)+余部Sn | 710~730 |
7 | 50 | Ag—Cu(95wt%)+Ti(5wt%) | 710~730 |
8 | 75 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
9 | 200 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
10 | 40 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
11 | 220 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
12 | 250 | Ag—Cu(90wt%)+Ti(4wt%)+余部Sn | 710~730 |
13 | 100 | Al(95wt%)+余部Si | 710~730 |
14 | 100 | Al(90wt%)+Y(1.0wt%)+余部Si | 575~610 |
15 | 100 | Al(85wt%)+Y(1.0wt%)+余部Si | 575~610 |
16 | 40 | Al(90wt%)+Y(1.0wt%)+余部Si | 575~610 |
17 | 50 | Al(90wt%)+Y(1.0wt%)+余部Si | 575~610 |
18 | 200 | Al(95wt%)+余部Si | 710~730 |
19 | 250 | Al(90wt%)+Y(1.0wt%)+余部Si | 575~610 |
接着,对各电子元器件模块1以目视方式调查电子元器件9的接合状态,对能够接合的零部件测定接合强度(TCT前的接合性能)。进一步地,对各电子元器件模块1实施—50℃×30分钟→室温×10分钟→155℃×30分钟→室温×10分钟作为1个循环的3000个循环的热循环试验。此后,以目视方式调查电子元器件9的接合的维持性能。对能够维持接合的零部件测定接合强度(TCT后的接合性能)。这些结果示于表2。
此外,在表2中,TCT前的接合性能的「良好」表示利用目视方式确认能够接合,同时接合强度为9.8kN/m以上。TCT前的接合性能的「不良」表示利用目视方式确认能够接合,但是接合强度未满9.8kN/m。TCT前的接合性能的「不能接合」表示利用目视方式确认不能够接合。
TCT后的接合性能的「良好」表示TCT后利用目视方式确认接合得以维持,同时接合强度得以维持为9.8kN/m以上。TCT后的接合性能的「不良」表示利用目视方式确认接合得以维持,但是接合强度未满9.8kN/m。TCT后的接合性能的「接合不能维持」表示利用目视方式确认接合没有得以维持。
接着对接合性能(TCT前、TCT后)良好的电子元器件模块1,使其实际在300℃或500℃条件下工作,试验其能否工作。其试验结果一起示于表2。此外,表2中的「500℃为止」表示被确认在300℃及500℃工作。「300℃为止」表示被确认在300℃工作,但是未被确认在500℃工作。
[表2]
从表1及表2可知,作为构成钎焊料层8的钎焊料,优选Ag及Cu两种元素的总含量为85wt%以上的Ag—Cu系钎焊料,或Al含量为90wt%以上的Al系钎焊料。优选第1金属板5的厚度与第2金属板7的厚度之比为50%以上且200%以下,进一步优选75%以上且150%以下。
接着,制作图1中示出结构的大功率半导体模块,对其TCT特性进行测定并评价。电路基板采用与上述具体例相同的基板。作为电子元器件9采用SiC元件。SiC元件使用与表1的试样3和试样13具有相同成分的钎焊料与电路基板进行接合。将采用与试样3相同的钎焊料的大功率半导体模块作为试样20,将采用与试样13相同的钎焊料的大功率半导体模块作为试样21。对这些大功率半导体模块的TCT特性作出如下评价。
即,对采用具有与试样3和试样13相同成分的钎焊料层来接合SiC元件的各大功率半导体模块,实施25℃×10分钟→30℃×10分钟作为1个循环的3000个循环的热循环试验。进一步地,对于25℃×10分钟→500℃×10分钟作为一个循环的热循环试验,另外25℃×10分钟→600℃×10分钟作为一个循环的热循环试验,分别实施3000个循环。在这些各热循环试验后确认有无接合不良的情况。这些确认结果示于表3。
[表3]
试样No. | 钎焊料 | 300℃为止的TCT特性 | 500℃为止的TCT特性 | 650℃为止的TCT特性 |
20 | 试样3 | 无接合不良 | 无接合不良 | 有接合不良 |
21 | 试样13 | 无接合不良 | 有接合不良 | 有接合不良 |
从表3可知,通过采用Sn含量为10~14质量%的范围的Ag—Cu—Ti系钎焊料作为钎焊料,能够提高高温下的TCT特性。从表中确认在比钎焊料的接合温度低200℃的温度以下能够工作,但是在比钎焊料的熔点低100℃的温度下接合不良的情况较多。试样21(Al—Si系钎焊料)由于钎焊料熔点低,在500℃以上TCT特性差。以此可知,在比钎焊料熔点低200℃的温度以下能够维持接合的可靠性。
接着,制作图3中示出结构的热电变换模块,对其TCT特性进行测定并评价。但是,在制作热电变换模块(试样22~26)时,使配置于高温侧(H)的第1电极5A的厚度T1与配置于低温侧(L)的第2电极5B的厚度T2之比如表4所示进行改变。对这些各热电变换模块的TCT特性作出如下评价。
即,使低温侧(L)为25℃,使高温侧(H)为200℃或500℃,以25℃×10分钟→200℃或500℃×30分钟作为一个循环实施3000个循环的热循环试验。对各热循环试验后的热电模块的工作进行确认。TCT试验后也工作的模块记为「良好」,不工作的模块记为「不良」。TCT试验后热电模块也工作的情况意味着热电元件与电极之间没有发生接合不良的情况。这些结果示于表4。
作为热电元件9A、9B,采用以具有MgAgAs型结晶结构的金属间化合物相为主相的热电材料。作为电路基板3,采用将氮化硅基板(厚度0.3mm×横向60mm×纵向60mm)与铜板接合作为电极5A、5B的基板。为了接合热电元件与电极、以及电极与氮化硅基板,使用Ag含量为69质量%、Cu含量为21质量%、Ti含量为2质量%,其余具有Sn的成分的钎焊料。接合后的钎焊料层的厚度为10~15μm。64个(=8个×8个)热电元件(9A、9B)接合于电路基板3上。作为参考例(试样27),准备了接合层中使用厚度为20μm的Ti层的试样。
[表4]
试样No. | 厚度T1(mm) | 厚度T2(mm) | 接合层 | TCT特性[高温侧200℃] | TCT特性[高温侧500℃] |
22 | 0.5 | 0.5 | Ag—Cu—Ti系钎焊料层 | 良好 | 不良 |
23 | 0.5 | 0.6 | Ag—Cu—Ti系钎焊料层 | 良好 | 良好 |
24 | 0.5 | 0.8 | Ag—Cu—Ti系钎焊料层 | 良好 | 良好 |
25 | 0.5 | 1 | Ag—Cu—Ti系钎焊料层 | 良好 | 良好 |
26 | 0.5 | 0.3 | Ag—Cu—Ti系钎焊料层 | 良好 | 不良 |
27 | 0.5 | 0.5 | Ti层 | 良好 | 不良 |
从表4可知,当高温侧的温度为200℃以下时,即高温侧的温度与低温侧的温度之差为200℃以下时,未确认有不良的情况。另一方面,当高温侧与低温侧的温度之差为300℃以上时,通过将高温侧的电极厚度T1做得比低温侧的电极厚度T2薄(T1<T2),能够提高TCT特性。另一方面,对高温侧为500℃时发生不良情况的试样22、试样26、试样27进行比较,对于电极剥离等接合不良的发生比例,参考例(试样27)中64个热电元件中平均有30个,试样26中有23个,试样22中有17个。这被认为是由于单层钛中没有充分缓和热应力而造成的。
此外,本发明并不限于上述实施方式,实施阶段中,在不脱离其要旨的范围内可以有各种变形。另外,各实施方式可在可能的范围内适当组合实施,在此情况下可以得到组合效果。进一步地,在上述实施方式中,包含着各阶段的发明,通过公开的多个构成要件的适当组合,能够从中得到各种发明。
工业上的实用性
若采用本发明的形态所涉及的电子元器件模块,能够抑制由于使用温度而造成的电子元器件的剥离等。从而,能够提供可靠性优异的电子元器件模块。这样的电子元器件模块可以有效使用于各种电子元器件,特别是高温环境下使用的电子元器件。
Claims (15)
1.一种电子元器件模块,其特征在于,
具备:
电路基板,该电路基板包括具备第1主面和与所述第1主面相反侧的第2主面的陶瓷基板、与所述陶瓷基板的所述第1主面接合的第1金属板、以及与所述陶瓷基板的所述第2主面接合的第2金属板;
以及通过钎焊料层与所述第1和第2金属板的至少一个金属板进行接合、且至少能够在125℃下工作的电子元器件;
所述钎焊料层由熔点比所述电子元器件的使用温度高的钎焊料构成。
2.如权利要求1所述的电子元器件模块,其特征在于,所述钎焊料具有比所述电子元器件的工作环境温度高的熔点。
3.如权利要求2所述的电子元器件模块,其特征在于,所述电子元器件的工作环境温度为300℃以上。
4.如权利要求3所述的电子元器件模块,其特征在于,所述电子元器件为SiC半导体元件。
5.如权利要求3所述的电子元器件模块,其特征在于,所述电子元器件为热电元件。
6.如权利要求1所述的电子元器件模块,其特征在于,将所述第1金属板与多个所述电子元器件进行接合。
7.如权利要求1所述的电子元器件模块,其特征在于,通过钎焊料将所述第2金属板与基板进行接合。
8.如权利要求7所述的电子元器件模块,其特征在于,所述钎焊料层由熔点比所述电子元器件的使用温度高的钎焊料构成。
9.如权利要求1所述的电子元器件模块,其特征在于,所述第1金属板的厚度与所述第2金属板的厚度之比在50%以上且200%以下的范围内。
10.如权利要求1所述的电子元器件模块,其特征在于,所述钎焊料是Ag及Cu的总含量为85质量%以上的Ag-Cu系钎焊料。
11.如权利要求10所述的电子元器件模块,其特征在于,所述Ag-Cu系钎焊料还包含选自Ti、Zr及Hf的至少一种,其含量为1质量%以上且5质量%以下,其余具有由选自Sn及In的至少一种构成的成分。
12.如权利要求10所述的电子元器件模块,其特征在于,在将Ag和Cu的总量设为100质量份时,所述Ag-Cu系钎焊料具有Cu的比例为10~35质量份范围的成分。
13.如权利要求1所述的电子元器件模块,其特征在于,所述钎焊料是Al的含量为90质量%以上的Al系钎焊料。
14.如权利要求13所述的电子元器件模块,其特征在于,所述Al系钎焊料还包含选自稀土元素的至少一种,其含量为0.1质量%以上且3质量%以下,其余具有由Si构成的成分。
15.如权利要求1所述的电子元器件模块,其特征在于,还具备:收纳接合所述电子元器件的所述电路基板的外壳、设置于所述外壳的电极、以及充填于所述外壳内以封装所述电子元器件与所述电路基板的绝缘物质。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006062706 | 2006-03-08 | ||
JP062706/2006 | 2006-03-08 | ||
PCT/JP2007/000169 WO2007105361A1 (ja) | 2006-03-08 | 2007-03-05 | 電子部品モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101401197A true CN101401197A (zh) | 2009-04-01 |
CN101401197B CN101401197B (zh) | 2011-05-18 |
Family
ID=38509202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800081204A Active CN101401197B (zh) | 2006-03-08 | 2007-03-05 | 电子元器件模块 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8273993B2 (zh) |
EP (1) | EP2006895B1 (zh) |
JP (2) | JPWO2007105361A1 (zh) |
CN (1) | CN101401197B (zh) |
TW (1) | TWI397979B (zh) |
WO (1) | WO2007105361A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465535A (zh) * | 2013-09-24 | 2015-03-25 | 英飞凌科技股份有限公司 | 衬底、芯片布置及其制造方法 |
CN104810466A (zh) * | 2014-01-23 | 2015-07-29 | Lg伊诺特有限公司 | 热电模块和包括热电模块的热转换装置 |
CN104851843A (zh) * | 2014-02-17 | 2015-08-19 | 三菱电机株式会社 | 电力用半导体装置 |
CN104867888A (zh) * | 2015-05-04 | 2015-08-26 | 嘉兴斯达半导体股份有限公司 | 一种高散热性SiC的功率模块 |
CN105047807A (zh) * | 2015-08-01 | 2015-11-11 | 河南鸿昌电子有限公司 | 半导体致冷件的制造方法 |
CN105452194A (zh) * | 2013-08-08 | 2016-03-30 | 株式会社东芝 | 电路基板以及半导体装置 |
CN108140713A (zh) * | 2015-09-28 | 2018-06-08 | 三菱综合材料株式会社 | 热电转换模块及热电转换装置 |
CN110691762A (zh) * | 2017-05-30 | 2020-01-14 | 电化株式会社 | 陶瓷电路基板和其制造方法 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2006895B1 (en) * | 2006-03-08 | 2019-09-18 | Kabushiki Kaisha Toshiba | Electronic component module |
JP4737436B2 (ja) * | 2006-11-28 | 2011-08-03 | ヤマハ株式会社 | 熱電変換モジュールの接合体 |
CN101971329B (zh) * | 2008-03-17 | 2012-11-21 | 三菱综合材料株式会社 | 带散热片的功率模块用基板及其制造方法、以及带散热片的功率模块、功率模块用基板 |
EP2282334B1 (en) | 2008-05-16 | 2020-08-19 | Mitsubishi Materials Corporation | Method for producing substrate for power module |
CN102047413B (zh) * | 2008-06-06 | 2015-04-15 | 三菱综合材料株式会社 | 功率模块用基板、功率模块以及功率模块用基板的制造方法 |
DE102009012841A1 (de) * | 2009-03-04 | 2010-09-16 | Elringklinger Ag | Strukturbauteil zur Wärmeabschirmung von Motoren oder Motorkomponenten, insbesondere Hitzeschild für Verbrennungskraftmaschinen |
KR101690820B1 (ko) * | 2009-09-09 | 2016-12-28 | 미쓰비시 마테리알 가부시키가이샤 | 히트 싱크 부착 파워 모듈용 기판의 제조 방법, 히트 싱크 부착 파워 모듈용 기판 및 파워 모듈 |
JP2011067849A (ja) * | 2009-09-28 | 2011-04-07 | Kyocera Corp | ろう材およびこれを用いて接合された放熱基体 |
US20120298408A1 (en) * | 2010-02-05 | 2012-11-29 | Mitsubishi Materials Corporation | Substrate for power module and power module |
CN101859751B (zh) * | 2010-05-20 | 2012-04-18 | 中国电子科技集团公司第四十三研究所 | 一种陶瓷复合基板 |
JP5638333B2 (ja) * | 2010-09-30 | 2014-12-10 | 京セラ株式会社 | 熱電モジュール |
DE102011103746A1 (de) | 2011-05-31 | 2012-12-06 | Ixys Semiconductor Gmbh | Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern |
CN104011852B (zh) * | 2011-12-20 | 2016-12-21 | 株式会社东芝 | 陶瓷铜电路基板和使用了陶瓷铜电路基板的半导体装置 |
DE102012102090A1 (de) * | 2012-01-31 | 2013-08-01 | Curamik Electronics Gmbh | Thermoelektrisches Generatormodul, Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP2013229579A (ja) * | 2012-03-30 | 2013-11-07 | Mitsubishi Materials Corp | パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール |
US8941208B2 (en) * | 2012-07-30 | 2015-01-27 | General Electric Company | Reliable surface mount integrated power module |
US9113583B2 (en) * | 2012-07-31 | 2015-08-18 | General Electric Company | Electronic circuit board, assembly and a related method thereof |
CN104718615B (zh) | 2012-10-04 | 2018-01-02 | 株式会社东芝 | 半导体电路板及其制造方法和使用其的半导体装置 |
JP2014091673A (ja) * | 2012-11-07 | 2014-05-19 | Denki Kagaku Kogyo Kk | 窒化物系セラミックス回路基板 |
JP5720839B2 (ja) | 2013-08-26 | 2015-05-20 | 三菱マテリアル株式会社 | 接合体及びパワーモジュール用基板 |
DE102014203176A1 (de) | 2014-02-21 | 2015-09-10 | MAHLE Behr GmbH & Co. KG | Thermoelektrische Vorrichtung, insbesondere thermoelektrischer Generator oder Wärmepumpe |
JP2016029695A (ja) * | 2014-07-25 | 2016-03-03 | 日立化成株式会社 | 熱電変換モジュールおよびその製造方法 |
CN106715304B (zh) | 2014-09-15 | 2019-09-20 | 奥的斯电梯公司 | 通过输入电梯呼叫来启动电梯服务的系统和方法 |
WO2016093238A1 (ja) * | 2014-12-10 | 2016-06-16 | 日立化成株式会社 | 熱電変換装置 |
JP6276424B2 (ja) * | 2014-12-16 | 2018-02-07 | 京セラ株式会社 | 回路基板および電子装置 |
EP3255666B1 (en) | 2015-02-02 | 2021-10-13 | Kabushiki Kaisha Toshiba | Silicon nitride circuit substrate and electronic component module using same |
JP6370257B2 (ja) * | 2015-04-27 | 2018-08-08 | 三菱電機株式会社 | 半導体装置 |
DE102015219737A1 (de) | 2015-04-27 | 2016-10-27 | Mahle International Gmbh | Thermoelektrisches Modul |
WO2017057259A1 (ja) * | 2015-09-28 | 2017-04-06 | 三菱マテリアル株式会社 | 熱電変換モジュール及び熱電変換装置 |
CN110690187B (zh) | 2015-09-28 | 2023-12-12 | 株式会社东芝 | 电路基板及半导体装置 |
US10160690B2 (en) * | 2015-09-28 | 2018-12-25 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board and semiconductor module using the same |
JP2017069443A (ja) * | 2015-09-30 | 2017-04-06 | ヤマハ株式会社 | 熱電変換モジュール |
WO2017090422A1 (ja) * | 2015-11-26 | 2017-06-01 | 三菱マテリアル株式会社 | セラミックス/アルミニウム接合体、絶縁回路基板、パワーモジュール、ledモジュール、熱電モジュール |
JP6729224B2 (ja) | 2015-11-26 | 2020-07-22 | 三菱マテリアル株式会社 | セラミックス/アルミニウム接合体、絶縁回路基板、パワーモジュール、ledモジュール、熱電モジュール |
JP2017130596A (ja) * | 2016-01-22 | 2017-07-27 | 日立化成株式会社 | 熱電変換モジュールおよびその製造方法 |
CN110246818A (zh) * | 2016-01-29 | 2019-09-17 | 台达电子工业股份有限公司 | 致冷晶片散热模组 |
JP6904088B2 (ja) * | 2016-06-30 | 2021-07-14 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、及び、絶縁回路基板 |
JP7151068B2 (ja) * | 2016-12-26 | 2022-10-12 | 三菱マテリアル株式会社 | ケース付熱電変換モジュール |
JP6717238B2 (ja) * | 2017-03-07 | 2020-07-01 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板 |
US11043465B2 (en) * | 2017-05-11 | 2021-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
US11638350B2 (en) * | 2019-12-02 | 2023-04-25 | Mitsubishi Materials Corporation | Copper/ceramic bonded body, insulating circuit board, method for producing copper/ceramic bonded body, and method for producing insulating circuit board |
KR102611698B1 (ko) * | 2021-03-31 | 2023-12-08 | 주식회사 아모센스 | 파워모듈의 제조방법 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6238796A (ja) * | 1985-08-10 | 1987-02-19 | Furukawa Alum Co Ltd | 真空ブレ−ジング用シ−ト |
JPH0635077B2 (ja) | 1985-10-02 | 1994-05-11 | 田中貴金属工業株式会社 | セラミックス用ろう材 |
JPS6471136A (en) | 1987-09-10 | 1989-03-16 | Mitsubishi Electric Corp | Semiconductor device |
JPH05136290A (ja) * | 1991-11-11 | 1993-06-01 | Toshiba Corp | セラミツクス回路基板 |
US5561322A (en) * | 1994-11-09 | 1996-10-01 | International Business Machines Corporation | Semiconductor chip package with enhanced thermal conductivity |
WO1996029736A1 (en) * | 1995-03-20 | 1996-09-26 | Kabushiki Kaisha Toshiba | Silicon nitride circuit substrate |
EP0766307B1 (en) * | 1995-03-20 | 2007-08-08 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board |
DE19527867A1 (de) * | 1995-07-29 | 1997-01-30 | Schulz Harder Juergen | Metall-Substrat für elektrische und/oder elektronische Schaltkreise |
US5837388A (en) | 1995-08-07 | 1998-11-17 | The Furukawa Electric Co., Ltd. | Aluminum alloy solder material, its manufacturing method, brazing sheet using this material, and method of manufacturing aluminum alloy heat exchanger using this sheet |
CN1053133C (zh) * | 1996-05-14 | 2000-06-07 | 西北有色金属研究院 | 一种铝-钛-铝钎焊料三层轧制复合板 |
JPH1098140A (ja) | 1996-09-24 | 1998-04-14 | Hitachi Ltd | マルチチップ型半導体装置 |
US6286206B1 (en) * | 1997-02-25 | 2001-09-11 | Chou H. Li | Heat-resistant electronic systems and circuit boards |
JP3682552B2 (ja) | 1997-03-12 | 2005-08-10 | 同和鉱業株式会社 | 金属−セラミックス複合基板の製造方法 |
JPH118414A (ja) | 1997-06-18 | 1999-01-12 | Sony Corp | 半導体装置および半導体発光装置 |
JP3463790B2 (ja) | 1998-03-17 | 2003-11-05 | 日本特殊陶業株式会社 | 配線基板 |
JPH11325466A (ja) | 1998-05-13 | 1999-11-26 | Tokai Konetsu Kogyo Co Ltd | 点火装置 |
JP2000101064A (ja) | 1998-09-25 | 2000-04-07 | Sanyo Electric Co Ltd | 電極、SiCの電極及びSiCデバイス |
JP3903681B2 (ja) * | 1999-03-11 | 2007-04-11 | 三菱マテリアル株式会社 | 半導体装置 |
JP2000271769A (ja) | 1999-03-29 | 2000-10-03 | Sanyo Electric Co Ltd | 溶着方法、それを用いた電極構造の製造方法、電極構造および熱電素子の製造方法並びに熱電素子 |
US6700053B2 (en) * | 2000-07-03 | 2004-03-02 | Komatsu Ltd. | Thermoelectric module |
JP2002094131A (ja) * | 2000-09-13 | 2002-03-29 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
DE10165080B4 (de) * | 2000-09-20 | 2015-05-13 | Hitachi Metals, Ltd. | Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit |
JP4828696B2 (ja) | 2000-12-27 | 2011-11-30 | 株式会社東芝 | 熱電モジュール用基板およびそれを用いた熱電モジュール |
JP4772187B2 (ja) | 2000-12-27 | 2011-09-14 | 株式会社東芝 | AlN焼結体およびこれを用いたAlN回路基板 |
JP2002203942A (ja) * | 2000-12-28 | 2002-07-19 | Fuji Electric Co Ltd | パワー半導体モジュール |
JP2002280621A (ja) * | 2001-01-15 | 2002-09-27 | Furukawa Electric Co Ltd:The | レーザーモジュール、ペルチェモジュールおよびペルチェモジュール一体型ヒートスプレッダー |
US7069645B2 (en) * | 2001-03-29 | 2006-07-04 | Ngk Insulators, Ltd. | Method for producing a circuit board |
JP2002359453A (ja) * | 2001-03-29 | 2002-12-13 | Ngk Insulators Ltd | 回路基板及びその製造方法 |
JP2002343911A (ja) * | 2001-05-16 | 2002-11-29 | Hitachi Metals Ltd | 基 板 |
JP4969738B2 (ja) * | 2001-06-28 | 2012-07-04 | 株式会社東芝 | セラミックス回路基板およびそれを用いた半導体モジュール |
JP3641232B2 (ja) * | 2001-11-13 | 2005-04-20 | 本田技研工業株式会社 | インバータ装置及びその製造方法 |
JP2003204020A (ja) * | 2002-01-04 | 2003-07-18 | Mitsubishi Electric Corp | 半導体装置 |
JP2003309294A (ja) | 2002-02-12 | 2003-10-31 | Komatsu Ltd | 熱電モジュール |
CN100364078C (zh) | 2002-04-19 | 2008-01-23 | 三菱麻铁里亚尔株式会社 | 电路基板及其制造方法、以及功率模块 |
JP2004063656A (ja) * | 2002-07-26 | 2004-02-26 | Toshiba Corp | 熱電変換装置 |
JP2004095670A (ja) | 2002-08-29 | 2004-03-25 | Toshiba Corp | 半導体装置 |
JP4096741B2 (ja) * | 2003-01-16 | 2008-06-04 | 松下電器産業株式会社 | 半導体装置 |
JP4362597B2 (ja) * | 2003-05-30 | 2009-11-11 | Dowaメタルテック株式会社 | 金属−セラミックス回路基板およびその製造方法 |
JP2005032833A (ja) | 2003-07-08 | 2005-02-03 | Toshiba Corp | モジュール型半導体装置 |
JP4028452B2 (ja) * | 2003-08-27 | 2007-12-26 | Dowaホールディングス株式会社 | 電子部品搭載基板およびその製造方法 |
US7482685B2 (en) * | 2003-09-25 | 2009-01-27 | Kabushiki Kaisha Toshiba | Ceramic circuit board, method for making the same, and power module |
JP4468044B2 (ja) | 2004-03-30 | 2010-05-26 | 株式会社東芝 | 熱電材料および熱電変換素子 |
JP2005353880A (ja) * | 2004-06-11 | 2005-12-22 | Sumitomo Electric Ind Ltd | 電力変換装置 |
KR100926851B1 (ko) * | 2004-12-20 | 2009-11-13 | 가부시끼가이샤 도시바 | 열전 변환 모듈과 그것을 이용한 열 교환기 및 열전 발전장치 |
US7586125B2 (en) * | 2006-02-20 | 2009-09-08 | Industrial Technology Research Institute | Light emitting diode package structure and fabricating method thereof |
EP2006895B1 (en) * | 2006-03-08 | 2019-09-18 | Kabushiki Kaisha Toshiba | Electronic component module |
-
2007
- 2007-03-05 EP EP07713551.5A patent/EP2006895B1/en active Active
- 2007-03-05 JP JP2008504986A patent/JPWO2007105361A1/ja active Pending
- 2007-03-05 WO PCT/JP2007/000169 patent/WO2007105361A1/ja active Application Filing
- 2007-03-05 US US12/281,856 patent/US8273993B2/en active Active
- 2007-03-05 CN CN2007800081204A patent/CN101401197B/zh active Active
- 2007-03-08 TW TW96108042A patent/TWI397979B/zh active
-
2012
- 2012-08-20 US US13/589,446 patent/US9214617B2/en active Active
- 2012-11-21 JP JP2012255067A patent/JP5656962B2/ja active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105452194B (zh) * | 2013-08-08 | 2017-05-03 | 株式会社东芝 | 电路基板以及半导体装置 |
CN105452194A (zh) * | 2013-08-08 | 2016-03-30 | 株式会社东芝 | 电路基板以及半导体装置 |
CN104465535A (zh) * | 2013-09-24 | 2015-03-25 | 英飞凌科技股份有限公司 | 衬底、芯片布置及其制造方法 |
CN104465535B (zh) * | 2013-09-24 | 2018-04-06 | 英飞凌科技股份有限公司 | 衬底、芯片布置及其制造方法 |
US9585241B2 (en) | 2013-09-24 | 2017-02-28 | Infineon Technologies Ag | Substrate, chip arrangement, and method for manufacturing the same |
CN104810466A (zh) * | 2014-01-23 | 2015-07-29 | Lg伊诺特有限公司 | 热电模块和包括热电模块的热转换装置 |
CN104851843A (zh) * | 2014-02-17 | 2015-08-19 | 三菱电机株式会社 | 电力用半导体装置 |
CN104867888A (zh) * | 2015-05-04 | 2015-08-26 | 嘉兴斯达半导体股份有限公司 | 一种高散热性SiC的功率模块 |
CN105047807A (zh) * | 2015-08-01 | 2015-11-11 | 河南鸿昌电子有限公司 | 半导体致冷件的制造方法 |
CN108140713A (zh) * | 2015-09-28 | 2018-06-08 | 三菱综合材料株式会社 | 热电转换模块及热电转换装置 |
CN108140713B (zh) * | 2015-09-28 | 2021-11-26 | 三菱综合材料株式会社 | 热电转换模块及热电转换装置 |
CN110691762A (zh) * | 2017-05-30 | 2020-01-14 | 电化株式会社 | 陶瓷电路基板和其制造方法 |
CN110691762B (zh) * | 2017-05-30 | 2022-06-14 | 电化株式会社 | 陶瓷电路基板和其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2007105361A1 (ja) | 2007-09-20 |
US20090056996A1 (en) | 2009-03-05 |
JPWO2007105361A1 (ja) | 2009-07-30 |
US9214617B2 (en) | 2015-12-15 |
EP2006895A1 (en) | 2008-12-24 |
EP2006895B1 (en) | 2019-09-18 |
EP2006895A4 (en) | 2016-08-10 |
JP2013048294A (ja) | 2013-03-07 |
US8273993B2 (en) | 2012-09-25 |
CN101401197B (zh) | 2011-05-18 |
JP5656962B2 (ja) | 2015-01-21 |
TW200802744A (en) | 2008-01-01 |
US20120305304A1 (en) | 2012-12-06 |
TWI397979B (zh) | 2013-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101401197B (zh) | 电子元器件模块 | |
JP6965768B2 (ja) | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、絶縁回路基板の製造方法 | |
EP3352233B1 (en) | Thermoelectric conversion module and thermoelectric conversion device | |
CN103703580B (zh) | 热电模块、用于制造热电模块的方法以及金属玻璃或烧结材料的应用 | |
EP2940720B1 (en) | Power module | |
JP3539634B2 (ja) | 回路搭載用窒化ケイ素基板および回路基板 | |
CN108687352A (zh) | 用于制造冷却装置的方法、冷却装置及冷却设备 | |
TWI711141B (zh) | 半導體裝置 | |
TW201841310A (zh) | 附有散熱片絕緣電路基板之製造方法 | |
RU2196683C2 (ru) | Подложка, способ ее получения (варианты) и металлическое соединенное изделие | |
EP3139419A1 (en) | Thermoelectric conversion module and manufacturing method thereof | |
JP6939973B2 (ja) | 銅/セラミックス接合体、及び、絶縁回路基板 | |
WO2017047627A1 (ja) | 熱電変換モジュール及び熱電変換装置 | |
JP2008147307A (ja) | 回路基板およびこれを用いた半導体モジュール | |
JP2009088330A (ja) | 半導体モジュール | |
JP2004231513A (ja) | 高強度・高熱伝導性に優れた回路基板 | |
JP3763107B2 (ja) | 熱電変換モジュール及びその製造方法 | |
JP5392901B2 (ja) | 窒化珪素配線基板 | |
JP2007250807A (ja) | 電子部品搭載回路基板の製造方法およびそれを用いたモジュールの製造方法 | |
JP2004134703A (ja) | 端子付き回路基板 | |
JP3180100B2 (ja) | 半導体モジュール | |
JP4941827B2 (ja) | 半導体モジュール | |
JP2002252317A (ja) | ヒートシンクとそれを用いたモジュール構造体 | |
JP4942257B2 (ja) | ヒートシンクとそれを用いたモジュール構造体 | |
JP2005044832A (ja) | セラミックス回路基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |