CN101183670B - 半导体装置、层叠型半导体装置以及内插器基板 - Google Patents

半导体装置、层叠型半导体装置以及内插器基板 Download PDF

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Publication number
CN101183670B
CN101183670B CN2007101927202A CN200710192720A CN101183670B CN 101183670 B CN101183670 B CN 101183670B CN 2007101927202 A CN2007101927202 A CN 2007101927202A CN 200710192720 A CN200710192720 A CN 200710192720A CN 101183670 B CN101183670 B CN 101183670B
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China
Prior art keywords
semiconductor device
semiconductor element
layer
connection layer
interposer substrate
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Expired - Fee Related
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CN2007101927202A
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Chinese (zh)
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CN101183670A (zh
Inventor
细野真行
柴田明司
稻叶公男
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1076—Shape of the containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
CN2007101927202A 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板 Expired - Fee Related CN101183670B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006311850A JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板
JP2006311850 2006-11-17
JP2006-311850 2006-11-17

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CN2009101498780A Division CN101604681B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
CN2009101498776A Division CN101604678B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板

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CN101183670A CN101183670A (zh) 2008-05-21
CN101183670B true CN101183670B (zh) 2011-06-22

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CN2009101498780A Expired - Fee Related CN101604681B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
CN2007101927202A Expired - Fee Related CN101183670B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
CN2009101498776A Expired - Fee Related CN101604678B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板

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US (2) US20080116559A1 (enExample)
JP (1) JP5028968B2 (enExample)
KR (1) KR100892203B1 (enExample)
CN (3) CN101604681B (enExample)
TW (1) TW200832659A (enExample)

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JP5671681B2 (ja) * 2009-03-05 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 積層型半導体装置
US8363418B2 (en) * 2011-04-18 2013-01-29 Morgan/Weiss Technologies Inc. Above motherboard interposer with peripheral circuits
WO2019142257A1 (ja) * 2018-01-17 2019-07-25 新電元工業株式会社 電子モジュール
KR102743244B1 (ko) * 2019-02-12 2024-12-18 삼성전자주식회사 인쇄 회로 기판 및 이를 포함하는 반도체 패키지
JP7135999B2 (ja) * 2019-05-13 2022-09-13 株式会社オートネットワーク技術研究所 配線基板
JP7156230B2 (ja) * 2019-10-02 2022-10-19 株式会社デンソー 半導体モジュール
IT202000001819A1 (it) 2020-01-30 2021-07-30 St Microelectronics Srl Circuito integrato e dispositivo elettronico comprendente una pluralita' di circuiti integrati accoppiati elettricamente tramite un segnale di sincronizzazione
CN112588222B (zh) * 2020-11-25 2022-02-18 浙江大学 声表面波调控孔隙率与排布的多孔聚合物制备装置与方法
CN121040214A (zh) * 2023-05-09 2025-11-28 索尼集团公司 中继部件以及电子设备

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CN1343007A (zh) * 2000-09-05 2002-04-03 精工爱普生株式会社 半导体装置及其制造方法,电路基板及电子设备

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JP2755252B2 (ja) * 1996-05-30 1998-05-20 日本電気株式会社 半導体装置用パッケージ及び半導体装置
JP3195236B2 (ja) * 1996-05-30 2001-08-06 株式会社日立製作所 接着フィルムを有する配線テープ，半導体装置及び製造方法
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US6160308A (en) * 1999-03-10 2000-12-12 Kabushiki Kaisha Toshiba Semiconductor device
CN1343007A (zh) * 2000-09-05 2002-04-03 精工爱普生株式会社 半导体装置及其制造方法,电路基板及电子设备

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KR20080045079A (ko) 2008-05-22
CN101604681B (zh) 2012-03-14
CN101604681A (zh) 2009-12-16
CN101604678A (zh) 2009-12-16
JP5028968B2 (ja) 2012-09-19
US20100171210A1 (en) 2010-07-08
TW200832659A (en) 2008-08-01
KR100892203B1 (ko) 2009-04-07
TWI363412B (enExample) 2012-05-01
CN101183670A (zh) 2008-05-21
US20080116559A1 (en) 2008-05-22
CN101604678B (zh) 2012-02-22
JP2008130678A (ja) 2008-06-05

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