TWI363412B - - Google Patents

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Publication number
TWI363412B
TWI363412B TW096138590A TW96138590A TWI363412B TW I363412 B TWI363412 B TW I363412B TW 096138590 A TW096138590 A TW 096138590A TW 96138590 A TW96138590 A TW 96138590A TW I363412 B TWI363412 B TW I363412B
Authority
TW
Taiwan
Prior art keywords
semiconductor element
semiconductor device
semiconductor
layer
substrate
Prior art date
Application number
TW096138590A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832659A (en
Inventor
Hosono Masayuki
Shibata Akiji
Inaba Kimio
Original Assignee
Hitachi Cable
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable filed Critical Hitachi Cable
Publication of TW200832659A publication Critical patent/TW200832659A/zh
Application granted granted Critical
Publication of TWI363412B publication Critical patent/TWI363412B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1076—Shape of the containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
TW096138590A 2006-11-17 2007-10-16 Semiconductor device, stacked semiconductor device and interposer substrate TW200832659A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006311850A JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板

Publications (2)

Publication Number Publication Date
TW200832659A TW200832659A (en) 2008-08-01
TWI363412B true TWI363412B (enExample) 2012-05-01

Family

ID=39416112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096138590A TW200832659A (en) 2006-11-17 2007-10-16 Semiconductor device, stacked semiconductor device and interposer substrate

Country Status (5)

Country Link
US (2) US20080116559A1 (enExample)
JP (1) JP5028968B2 (enExample)
KR (1) KR100892203B1 (enExample)
CN (3) CN101604678B (enExample)
TW (1) TW200832659A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5671681B2 (ja) * 2009-03-05 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 積層型半導体装置
US8363418B2 (en) 2011-04-18 2013-01-29 Morgan/Weiss Technologies Inc. Above motherboard interposer with peripheral circuits
WO2019142257A1 (ja) * 2018-01-17 2019-07-25 新電元工業株式会社 電子モジュール
KR102743244B1 (ko) * 2019-02-12 2024-12-18 삼성전자주식회사 인쇄 회로 기판 및 이를 포함하는 반도체 패키지
JP7135999B2 (ja) * 2019-05-13 2022-09-13 株式会社オートネットワーク技術研究所 配線基板
JP7156230B2 (ja) * 2019-10-02 2022-10-19 株式会社デンソー 半導体モジュール
IT202000001819A1 (it) 2020-01-30 2021-07-30 St Microelectronics Srl Circuito integrato e dispositivo elettronico comprendente una pluralita' di circuiti integrati accoppiati elettricamente tramite un segnale di sincronizzazione
CN112588222B (zh) * 2020-11-25 2022-02-18 浙江大学 声表面波调控孔隙率与排布的多孔聚合物制备装置与方法
WO2024232169A1 (ja) * 2023-05-09 2024-11-14 ソニーグループ株式会社 中継部材および電子機器

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
US6111306A (en) * 1993-12-06 2000-08-29 Fujitsu Limited Semiconductor device and method of producing the same and semiconductor device unit and method of producing the same
JPH07201912A (ja) * 1993-12-28 1995-08-04 Hitachi Cable Ltd フィルムキャリア方式半導体装置及びフィルムキャリア
JPH0831868A (ja) * 1994-07-21 1996-02-02 Hitachi Cable Ltd Ｂｇａ型半導体装置
US5747874A (en) * 1994-09-20 1998-05-05 Fujitsu Limited Semiconductor device, base member for semiconductor device and semiconductor device unit
JP3195236B2 (ja) * 1996-05-30 2001-08-06 株式会社日立製作所 接着フィルムを有する配線テープ，半導体装置及び製造方法
JP2755252B2 (ja) * 1996-05-30 1998-05-20 日本電気株式会社 半導体装置用パッケージ及び半導体装置
US6617193B1 (en) * 1997-04-30 2003-09-09 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor device substrate, and methods of fabricating the same
JP2924854B2 (ja) * 1997-05-20 1999-07-26 日本電気株式会社 半導体装置、その製造方法
JP3639088B2 (ja) * 1997-06-06 2005-04-13 株式会社ルネサステクノロジ 半導体装置及び配線テープ
US6300679B1 (en) * 1998-06-01 2001-10-09 Semiconductor Components Industries, Llc Flexible substrate for packaging a semiconductor component
JP2000077563A (ja) * 1998-08-31 2000-03-14 Sharp Corp 半導体装置およびその製造方法
JP2000260792A (ja) * 1999-03-10 2000-09-22 Toshiba Corp 半導体装置
JP3180800B2 (ja) 1999-04-08 2001-06-25 カシオ計算機株式会社 半導体装置及びその製造方法
JP3722209B2 (ja) * 2000-09-05 2005-11-30 セイコーエプソン株式会社 半導体装置
JP2002289741A (ja) * 2001-03-23 2002-10-04 Nec Kyushu Ltd 半導体装置
JP4103342B2 (ja) * 2001-05-22 2008-06-18 日立電線株式会社 半導体装置の製造方法
JP3705235B2 (ja) * 2002-04-16 2005-10-12 日立電線株式会社 半導体装置の製造方法
JP4225036B2 (ja) 2002-11-20 2009-02-18 日本電気株式会社 半導体パッケージ及び積層型半導体パッケージ
JP3900093B2 (ja) * 2003-03-11 2007-04-04 日立電線株式会社 モールド金型及びそれを用いた半導体装置の製造方法
TW200514484A (en) * 2003-10-08 2005-04-16 Chung-Cheng Wang Substrate for electrical device and methods of fabricating the same
JP4291209B2 (ja) * 2004-05-20 2009-07-08 エルピーダメモリ株式会社 半導体装置の製造方法
US7154175B2 (en) * 2004-06-21 2006-12-26 Intel Corporation Ground plane for integrated circuit package
KR100715316B1 (ko) * 2006-02-13 2007-05-08 삼성전자주식회사 유연성 회로 기판을 이용하는 반도체 칩 패키지 실장 구조

Also Published As

Publication number Publication date
JP2008130678A (ja) 2008-06-05
KR20080045079A (ko) 2008-05-22
CN101183670B (zh) 2011-06-22
TW200832659A (en) 2008-08-01
CN101604681B (zh) 2012-03-14
CN101183670A (zh) 2008-05-21
CN101604678B (zh) 2012-02-22
US20080116559A1 (en) 2008-05-22
JP5028968B2 (ja) 2012-09-19
CN101604678A (zh) 2009-12-16
US20100171210A1 (en) 2010-07-08
CN101604681A (zh) 2009-12-16
KR100892203B1 (ko) 2009-04-07

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