KR100892203B1 - 반도체 장치, 적층형 반도체 장치, 및 인터포저 기판 - Google Patents

반도체 장치, 적층형 반도체 장치, 및 인터포저 기판 Download PDF

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KR100892203B1
KR100892203B1 KR1020070117566A KR20070117566A KR100892203B1 KR 100892203 B1 KR100892203 B1 KR 100892203B1 KR 1020070117566 A KR1020070117566 A KR 1020070117566A KR 20070117566 A KR20070117566 A KR 20070117566A KR 100892203 B1 KR100892203 B1 KR 100892203B1
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semiconductor device
semiconductor element
interposer substrate
semiconductor
layer
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Korean (ko)
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KR20080045079A (ko
Inventor
마사유끼 호소노
아끼지 시바따
기미오 이나바
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히다찌 케이블 리미티드
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1076Shape of the containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01033Arsenic [As]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
KR1020070117566A 2006-11-17 2007-11-16 반도체 장치, 적층형 반도체 장치, 및 인터포저 기판 Expired - Fee Related KR100892203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006311850A JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板
JPJP-P-2006-00311850 2006-11-17

Publications (2)

Publication Number Publication Date
KR20080045079A KR20080045079A (ko) 2008-05-22
KR100892203B1 true KR100892203B1 (ko) 2009-04-07

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KR1020070117566A Expired - Fee Related KR100892203B1 (ko) 2006-11-17 2007-11-16 반도체 장치, 적층형 반도체 장치, 및 인터포저 기판

Country Status (5)

Country Link
US (2) US20080116559A1 (enExample)
JP (1) JP5028968B2 (enExample)
KR (1) KR100892203B1 (enExample)
CN (3) CN101604678B (enExample)
TW (1) TW200832659A (enExample)

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JP5671681B2 (ja) * 2009-03-05 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 積層型半導体装置
US8363418B2 (en) 2011-04-18 2013-01-29 Morgan/Weiss Technologies Inc. Above motherboard interposer with peripheral circuits
WO2019142257A1 (ja) * 2018-01-17 2019-07-25 新電元工業株式会社 電子モジュール
KR102743244B1 (ko) * 2019-02-12 2024-12-18 삼성전자주식회사 인쇄 회로 기판 및 이를 포함하는 반도체 패키지
JP7135999B2 (ja) * 2019-05-13 2022-09-13 株式会社オートネットワーク技術研究所 配線基板
JP7156230B2 (ja) * 2019-10-02 2022-10-19 株式会社デンソー 半導体モジュール
IT202000001819A1 (it) 2020-01-30 2021-07-30 St Microelectronics Srl Circuito integrato e dispositivo elettronico comprendente una pluralita' di circuiti integrati accoppiati elettricamente tramite un segnale di sincronizzazione
CN112588222B (zh) * 2020-11-25 2022-02-18 浙江大学 声表面波调控孔隙率与排布的多孔聚合物制备装置与方法
WO2024232169A1 (ja) * 2023-05-09 2024-11-14 ソニーグループ株式会社 中継部材および電子機器

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JP2000294598A (ja) 1999-04-08 2000-10-20 Casio Comput Co Ltd 半導体装置及びその製造方法
JP2004172323A (ja) 2002-11-20 2004-06-17 Nec Corp 半導体パッケージ及び積層型半導体パッケージ

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JPH07201912A (ja) * 1993-12-28 1995-08-04 Hitachi Cable Ltd フィルムキャリア方式半導体装置及びフィルムキャリア
JPH0831868A (ja) * 1994-07-21 1996-02-02 Hitachi Cable Ltd Bga型半導体装置
US5747874A (en) * 1994-09-20 1998-05-05 Fujitsu Limited Semiconductor device, base member for semiconductor device and semiconductor device unit
JP3195236B2 (ja) * 1996-05-30 2001-08-06 株式会社日立製作所 接着フィルムを有する配線テープ,半導体装置及び製造方法
JP2755252B2 (ja) * 1996-05-30 1998-05-20 日本電気株式会社 半導体装置用パッケージ及び半導体装置
US6617193B1 (en) * 1997-04-30 2003-09-09 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor device substrate, and methods of fabricating the same
JP2924854B2 (ja) * 1997-05-20 1999-07-26 日本電気株式会社 半導体装置、その製造方法
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JP2000294598A (ja) 1999-04-08 2000-10-20 Casio Comput Co Ltd 半導体装置及びその製造方法
JP2004172323A (ja) 2002-11-20 2004-06-17 Nec Corp 半導体パッケージ及び積層型半導体パッケージ

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Publication number Publication date
JP2008130678A (ja) 2008-06-05
KR20080045079A (ko) 2008-05-22
CN101183670B (zh) 2011-06-22
TW200832659A (en) 2008-08-01
CN101604681B (zh) 2012-03-14
CN101183670A (zh) 2008-05-21
TWI363412B (enExample) 2012-05-01
CN101604678B (zh) 2012-02-22
US20080116559A1 (en) 2008-05-22
JP5028968B2 (ja) 2012-09-19
CN101604678A (zh) 2009-12-16
US20100171210A1 (en) 2010-07-08
CN101604681A (zh) 2009-12-16

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