JP5028968B2 - 半導体装置、積層型半導体装置およびインターポーザ基板 - Google Patents

半導体装置、積層型半導体装置およびインターポーザ基板 Download PDF

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Publication number
JP5028968B2
JP5028968B2 JP2006311850A JP2006311850A JP5028968B2 JP 5028968 B2 JP5028968 B2 JP 5028968B2 JP 2006311850 A JP2006311850 A JP 2006311850A JP 2006311850 A JP2006311850 A JP 2006311850A JP 5028968 B2 JP5028968 B2 JP 5028968B2
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Japan
Prior art keywords
semiconductor device
semiconductor element
layer
connection layer
interposer substrate
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Expired - Fee Related
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JP2006311850A
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English (en)
Japanese (ja)
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JP2008130678A (ja
Inventor
眞行 細野
明司 柴田
公男 稲葉
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Priority to JP2006311850A priority Critical patent/JP5028968B2/ja
Priority to TW096138590A priority patent/TW200832659A/zh
Priority to US11/979,785 priority patent/US20080116559A1/en
Priority to CN2009101498780A priority patent/CN101604681B/zh
Priority to CN2009101498776A priority patent/CN101604678B/zh
Priority to KR1020070117566A priority patent/KR100892203B1/ko
Priority to CN2007101927202A priority patent/CN101183670B/zh
Publication of JP2008130678A publication Critical patent/JP2008130678A/ja
Priority to US12/725,090 priority patent/US20100171210A1/en
Application granted granted Critical
Publication of JP5028968B2 publication Critical patent/JP5028968B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1076—Shape of the containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
JP2006311850A 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板 Expired - Fee Related JP5028968B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006311850A JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板
TW096138590A TW200832659A (en) 2006-11-17 2007-10-16 Semiconductor device, stacked semiconductor device and interposer substrate
US11/979,785 US20080116559A1 (en) 2006-11-17 2007-11-08 Semiconductor device, stacked semiconductor device and interposer substrate
CN2009101498776A CN101604678B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
CN2009101498780A CN101604681B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
KR1020070117566A KR100892203B1 (ko) 2006-11-17 2007-11-16 반도체 장치, 적층형 반도체 장치, 및 인터포저 기판
CN2007101927202A CN101183670B (zh) 2006-11-17 2007-11-16 半导体装置、层叠型半导体装置以及内插器基板
US12/725,090 US20100171210A1 (en) 2006-11-17 2010-03-16 Semiconductor device, stacked semiconductor device and interposer substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006311850A JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板

Publications (2)

Publication Number Publication Date
JP2008130678A JP2008130678A (ja) 2008-06-05
JP5028968B2 true JP5028968B2 (ja) 2012-09-19

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JP2006311850A Expired - Fee Related JP5028968B2 (ja) 2006-11-17 2006-11-17 半導体装置、積層型半導体装置およびインターポーザ基板

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US (2) US20080116559A1 (enExample)
JP (1) JP5028968B2 (enExample)
KR (1) KR100892203B1 (enExample)
CN (3) CN101604678B (enExample)
TW (1) TW200832659A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5671681B2 (ja) * 2009-03-05 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 積層型半導体装置
US8363418B2 (en) 2011-04-18 2013-01-29 Morgan/Weiss Technologies Inc. Above motherboard interposer with peripheral circuits
WO2019142257A1 (ja) * 2018-01-17 2019-07-25 新電元工業株式会社 電子モジュール
KR102743244B1 (ko) * 2019-02-12 2024-12-18 삼성전자주식회사 인쇄 회로 기판 및 이를 포함하는 반도체 패키지
JP7135999B2 (ja) * 2019-05-13 2022-09-13 株式会社オートネットワーク技術研究所 配線基板
JP7156230B2 (ja) * 2019-10-02 2022-10-19 株式会社デンソー 半導体モジュール
IT202000001819A1 (it) 2020-01-30 2021-07-30 St Microelectronics Srl Circuito integrato e dispositivo elettronico comprendente una pluralita' di circuiti integrati accoppiati elettricamente tramite un segnale di sincronizzazione
CN112588222B (zh) * 2020-11-25 2022-02-18 浙江大学 声表面波调控孔隙率与排布的多孔聚合物制备装置与方法
WO2024232169A1 (ja) * 2023-05-09 2024-11-14 ソニーグループ株式会社 中継部材および電子機器

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JPH07201912A (ja) * 1993-12-28 1995-08-04 Hitachi Cable Ltd フィルムキャリア方式半導体装置及びフィルムキャリア
JPH0831868A (ja) * 1994-07-21 1996-02-02 Hitachi Cable Ltd Ｂｇａ型半導体装置
US5747874A (en) * 1994-09-20 1998-05-05 Fujitsu Limited Semiconductor device, base member for semiconductor device and semiconductor device unit
JP3195236B2 (ja) * 1996-05-30 2001-08-06 株式会社日立製作所 接着フィルムを有する配線テープ，半導体装置及び製造方法
JP2755252B2 (ja) * 1996-05-30 1998-05-20 日本電気株式会社 半導体装置用パッケージ及び半導体装置
US6617193B1 (en) * 1997-04-30 2003-09-09 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor device substrate, and methods of fabricating the same
JP2924854B2 (ja) * 1997-05-20 1999-07-26 日本電気株式会社 半導体装置、その製造方法
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Publication number Publication date
JP2008130678A (ja) 2008-06-05
KR20080045079A (ko) 2008-05-22
CN101183670B (zh) 2011-06-22
TW200832659A (en) 2008-08-01
CN101604681B (zh) 2012-03-14
CN101183670A (zh) 2008-05-21
TWI363412B (enExample) 2012-05-01
CN101604678B (zh) 2012-02-22
US20080116559A1 (en) 2008-05-22
CN101604678A (zh) 2009-12-16
US20100171210A1 (en) 2010-07-08
CN101604681A (zh) 2009-12-16
KR100892203B1 (ko) 2009-04-07

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