CN101040343B - 用于静态随机存取存储器的字线驱动器电路及其方法 - Google Patents

用于静态随机存取存储器的字线驱动器电路及其方法 Download PDF

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Publication number
CN101040343B
CN101040343B CN2005800347232A CN200580034723A CN101040343B CN 101040343 B CN101040343 B CN 101040343B CN 2005800347232 A CN2005800347232 A CN 2005800347232A CN 200580034723 A CN200580034723 A CN 200580034723A CN 101040343 B CN101040343 B CN 101040343B
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CN
China
Prior art keywords
voltage
source node
word line
circuit according
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CN2005800347232A
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English (en)
Chinese (zh)
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CN101040343A (zh
Inventor
斯科特·I·雷明顿
詹姆斯·D·伯内特
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101040343A publication Critical patent/CN101040343A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
CN2005800347232A 2004-11-18 2005-10-25 用于静态随机存取存储器的字线驱动器电路及其方法 Expired - Lifetime CN101040343B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/991,910 US7085175B2 (en) 2004-11-18 2004-11-18 Word line driver circuit for a static random access memory and method therefor
US10/991,910 2004-11-18
PCT/US2005/038468 WO2006055190A1 (en) 2004-11-18 2005-10-25 Word line driver circuit for a static random access memory and method therefor

Publications (2)

Publication Number Publication Date
CN101040343A CN101040343A (zh) 2007-09-19
CN101040343B true CN101040343B (zh) 2013-11-20

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CN2005800347232A Expired - Lifetime CN101040343B (zh) 2004-11-18 2005-10-25 用于静态随机存取存储器的字线驱动器电路及其方法

Country Status (5)

Country Link
US (1) US7085175B2 (enExample)
JP (1) JP4988588B2 (enExample)
KR (1) KR101227291B1 (enExample)
CN (1) CN101040343B (enExample)
WO (1) WO2006055190A1 (enExample)

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JP5064089B2 (ja) * 2007-04-12 2012-10-31 パナソニック株式会社 半導体集積回路
JP5224040B2 (ja) * 2008-04-01 2013-07-03 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP5262454B2 (ja) * 2008-09-01 2013-08-14 富士通セミコンダクター株式会社 半導体メモリ
US7903483B2 (en) * 2008-11-21 2011-03-08 Freescale Semiconductor, Inc. Integrated circuit having memory with configurable read/write operations and method therefor
TWI404065B (zh) * 2009-02-13 2013-08-01 Univ Hsiuping Sci & Tech 寫入操作時提高字元線電壓位準之單埠靜態隨機存取記憶體
US7864617B2 (en) * 2009-02-19 2011-01-04 Freescale Semiconductor, Inc. Memory with reduced power supply voltage for a write operation
US8315117B2 (en) * 2009-03-31 2012-11-20 Freescale Semiconductor, Inc. Integrated circuit memory having assisted access and method therefor
US8379466B2 (en) 2009-03-31 2013-02-19 Freescale Semiconductor, Inc. Integrated circuit having an embedded memory and method for testing the memory
US8634263B2 (en) * 2009-04-30 2014-01-21 Freescale Semiconductor, Inc. Integrated circuit having memory repair information storage and method therefor
KR101068571B1 (ko) * 2009-07-03 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
US8514611B2 (en) * 2010-08-04 2013-08-20 Freescale Semiconductor, Inc. Memory with low voltage mode operation
US8228713B2 (en) 2010-09-28 2012-07-24 International Business Machines Corporation SRAM having wordline up-level voltage adjustable to assist bitcell stability and design structure for same
US8582351B2 (en) 2010-09-28 2013-11-12 International Business Machines Corporation Methods and systems for adjusting wordline up-level voltage to improve production yield relative to SRAM-cell stability
KR101799482B1 (ko) * 2010-12-29 2017-11-20 삼성전자주식회사 기입 어시스트 회로를 포함하는 정적 메모리 장치
JP5653856B2 (ja) * 2011-07-21 2015-01-14 ルネサスエレクトロニクス株式会社 半導体装置
US8811110B2 (en) * 2012-06-28 2014-08-19 Intel Corporation Configuration for power reduction in DRAM
US8804449B2 (en) 2012-09-06 2014-08-12 Micron Technology, Inc. Apparatus and methods to provide power management for memory devices
KR102083488B1 (ko) 2013-09-12 2020-03-02 삼성전자 주식회사 테스트 인터페이스 보드 및 이를 포함하는 테스트 시스템
CN103531229A (zh) * 2013-10-18 2014-01-22 上海工程技术大学 一种静态随机存储器
JP6424448B2 (ja) * 2014-03-28 2018-11-21 株式会社ソシオネクスト 半導体記憶装置
US9455023B1 (en) * 2015-10-14 2016-09-27 Oracle International Corporation Wordline under-driving using a virtual power network
IT201600121631A1 (it) 2016-11-30 2018-05-30 St Microelectronics Srl Dispositivo di memoria a cambiamento di fase con un circuito di pilotaggio di linea di parola a elevata velocita'
JP2020042878A (ja) * 2018-09-12 2020-03-19 株式会社東芝 半導体記憶装置
US11282569B2 (en) * 2020-01-28 2022-03-22 Micron Technology, Inc. Apparatus with latch balancing mechanism and methods for operating the same

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JP2001014859A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置
US6188628B1 (en) * 1999-04-13 2001-02-13 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device
JP2002042476A (ja) * 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2004339398A (ja) * 2003-05-16 2004-12-02 Toyobo Co Ltd ラミネート用ポリオレフィン系フィルム、それを用いた積層フィルムおよび包装袋
JP2005303892A (ja) * 2004-04-15 2005-10-27 Sharp Corp 通信装置
JP2006020477A (ja) * 2004-07-05 2006-01-19 Asmo Co Ltd 回転電機、電動パワーステアリング用モータ、及び回転電機の製造方法

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US6188628B1 (en) * 1999-04-13 2001-02-13 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device
JP2001014859A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置
JP2002042476A (ja) * 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2004339398A (ja) * 2003-05-16 2004-12-02 Toyobo Co Ltd ラミネート用ポリオレフィン系フィルム、それを用いた積層フィルムおよび包装袋
JP2005303892A (ja) * 2004-04-15 2005-10-27 Sharp Corp 通信装置
JP2006020477A (ja) * 2004-07-05 2006-01-19 Asmo Co Ltd 回転電機、電動パワーステアリング用モータ、及び回転電機の製造方法

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Also Published As

Publication number Publication date
KR20070084313A (ko) 2007-08-24
US20060104107A1 (en) 2006-05-18
WO2006055190A1 (en) 2006-05-26
CN101040343A (zh) 2007-09-19
KR101227291B1 (ko) 2013-01-29
JP2008521157A (ja) 2008-06-19
US7085175B2 (en) 2006-08-01
JP4988588B2 (ja) 2012-08-01

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Address after: Texas in the United States

Patentee after: NXP USA, Inc.

Address before: Texas in the United States

Patentee before: FREESCALE SEMICONDUCTOR, Inc.

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Granted publication date: 20131120