CN100570830C - 刻蚀含-碳层的方法和制造半导体器件的方法 - Google Patents

刻蚀含-碳层的方法和制造半导体器件的方法 Download PDF

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CN100570830C
CN100570830C CNB2006101321471A CN200610132147A CN100570830C CN 100570830 C CN100570830 C CN 100570830C CN B2006101321471 A CNB2006101321471 A CN B2006101321471A CN 200610132147 A CN200610132147 A CN 200610132147A CN 100570830 C CN100570830 C CN 100570830C
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carbon
etching
gas
layer
mist
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CN1956154A (zh
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裵根熙
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2006101321471A 2005-10-12 2006-10-11 刻蚀含-碳层的方法和制造半导体器件的方法 Active CN100570830C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050096164 2005-10-12
KR1020050096164A KR100780944B1 (ko) 2005-10-12 2005-10-12 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법

Publications (2)

Publication Number Publication Date
CN1956154A CN1956154A (zh) 2007-05-02
CN100570830C true CN100570830C (zh) 2009-12-16

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Country Link
US (1) US7494934B2 (https=)
JP (1) JP5122106B2 (https=)
KR (1) KR100780944B1 (https=)
CN (1) CN100570830C (https=)

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JP2010041028A (ja) 2008-07-11 2010-02-18 Tokyo Electron Ltd 基板処理方法
JP2010283213A (ja) * 2009-06-05 2010-12-16 Tokyo Electron Ltd 基板処理方法
EP2525416A2 (en) * 2011-05-17 2012-11-21 Intevac, Inc. Method for rear point contact fabrication for solar cells
US8916054B2 (en) * 2011-10-26 2014-12-23 International Business Machines Corporation High fidelity patterning employing a fluorohydrocarbon-containing polymer
TWI497586B (zh) 2011-10-31 2015-08-21 日立全球先端科技股份有限公司 Plasma etching method
JP5932599B2 (ja) 2011-10-31 2016-06-08 株式会社日立ハイテクノロジーズ プラズマエッチング方法
KR20130107628A (ko) 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법
CN103377991B (zh) * 2012-04-18 2016-02-17 中芯国际集成电路制造(上海)有限公司 沟槽的形成方法
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
CN104425221B (zh) * 2013-08-28 2017-12-01 中芯国际集成电路制造(上海)有限公司 图形化方法
CN104425222B (zh) * 2013-08-28 2018-09-07 中芯国际集成电路制造(上海)有限公司 图形化方法
KR102362065B1 (ko) 2015-05-27 2022-02-14 삼성전자주식회사 반도체 소자의 제조 방법
JP6748354B2 (ja) * 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
WO2017127233A1 (en) * 2016-01-20 2017-07-27 Applied Materials, Inc. Hybrid carbon hardmask for lateral hardmask recess reduction
JP6458156B2 (ja) * 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102582762B1 (ko) * 2017-05-11 2023-09-25 주성엔지니어링(주) 기판 처리 방법 및 그를 이용한 유기 발광 소자 제조 방법
KR102372892B1 (ko) * 2017-08-10 2022-03-10 삼성전자주식회사 집적회로 소자의 제조 방법
US10978302B2 (en) * 2017-11-29 2021-04-13 Lam Research Corporation Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
JP7366918B2 (ja) 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
CN108538712B (zh) * 2018-04-25 2020-08-25 武汉新芯集成电路制造有限公司 接触孔的制造方法
CN111446204B (zh) * 2019-01-17 2024-02-06 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
JP2022539699A (ja) 2019-06-24 2022-09-13 ラム リサーチ コーポレーション 選択的カーボン堆積
JP7321059B2 (ja) * 2019-11-06 2023-08-04 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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Also Published As

Publication number Publication date
JP2007110112A (ja) 2007-04-26
US7494934B2 (en) 2009-02-24
US20070082483A1 (en) 2007-04-12
CN1956154A (zh) 2007-05-02
KR100780944B1 (ko) 2007-12-03
JP5122106B2 (ja) 2013-01-16
KR20070040633A (ko) 2007-04-17

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