AU2001249659A1 - Method of forming vias in silicon carbide and resulting devices and circuits - Google Patents

Method of forming vias in silicon carbide and resulting devices and circuits

Info

Publication number
AU2001249659A1
AU2001249659A1 AU2001249659A AU4965901A AU2001249659A1 AU 2001249659 A1 AU2001249659 A1 AU 2001249659A1 AU 2001249659 A AU2001249659 A AU 2001249659A AU 4965901 A AU4965901 A AU 4965901A AU 2001249659 A1 AU2001249659 A1 AU 2001249659A1
Authority
AU
Australia
Prior art keywords
silicon carbide
circuits
forming vias
resulting devices
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249659A
Other languages
English (en)
Inventor
Zoltan Ring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2001249659A1 publication Critical patent/AU2001249659A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
AU2001249659A 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits Abandoned AU2001249659A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09546821 2000-04-11
US09/546,821 US6475889B1 (en) 2000-04-11 2000-04-11 Method of forming vias in silicon carbide and resulting devices and circuits
PCT/US2001/010289 WO2001078120A1 (en) 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits

Publications (1)

Publication Number Publication Date
AU2001249659A1 true AU2001249659A1 (en) 2001-10-23

Family

ID=24182160

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249659A Abandoned AU2001249659A1 (en) 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits

Country Status (11)

Country Link
US (4) US6475889B1 (zh)
EP (2) EP2182548B1 (zh)
JP (1) JP5142438B2 (zh)
KR (1) KR100797130B1 (zh)
CN (1) CN1197126C (zh)
AT (1) ATE467231T1 (zh)
AU (1) AU2001249659A1 (zh)
CA (1) CA2406054C (zh)
DE (1) DE60142035D1 (zh)
TW (1) TW571383B (zh)
WO (1) WO2001078120A1 (zh)

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CA2406054C (en) 2010-12-21
ATE467231T1 (de) 2010-05-15
KR100797130B1 (ko) 2008-01-22
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US6946739B2 (en) 2005-09-20
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US6475889B1 (en) 2002-11-05
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EP1273032A1 (en) 2003-01-08
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US6515303B2 (en) 2003-02-04
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US20040241970A1 (en) 2004-12-02
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JP5142438B2 (ja) 2013-02-13

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