JP2017157585A - 半導体デバイスおよびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010410 layer Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 19
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 24
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- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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Abstract
【解決手段】半導体デバイス100において、エピ基板102は、SiC(炭化珪素)基板およびSiC基板上に形成されるGaN(窒化ガリウム)のエピ層を含む。多層配線構造300は、エピ基板102の表面側に形成されており、少なくともひとつの金属配線層M1および有機系の層間絶縁膜を含む。裏面メタル層120は、エピ基板102の裏面に形成される。少なくともひとつのビアホール122は、エピ基板102に形成され、多層配線構造300と裏面メタル層120の間を接続する。
【選択図】図2
Description
同様に、「部材Cが、部材Aと部材Bの間に設けられた状態」とは、部材Aと部材C、あるいは部材Bと部材Cが直接的に接続される場合のほか、電気的な接続状態に影響を及ぼさない他の部材を介して間接的に接続される場合も含む。
Claims (8)
- SiC(炭化珪素)基板および前記SiC基板上に形成されるGaN(窒化ガリウム)のエピ層を含むエピ基板と、
前記エピ基板の表面側に形成され、少なくともひとつの金属配線層および有機系の層間絶縁膜を含む多層配線構造と、
前記エピ基板の裏面に形成される裏面メタル層と、
前記エピ基板に形成され、前記多層配線構造と前記裏面メタル層の間を接続する少なくともひとつのビアホールと、
を備えることを特徴とする半導体デバイス。 - 前記ビアホールの形成におけるビアホールエッチングは、前記層間絶縁膜が変質しない条件で行われることを特徴とする請求項1に記載の半導体デバイス。
- エッチングレートは、1μm/min以下であることを特徴とする請求項1または2に記載の半導体デバイス。
- エッチング中の前記エピ基板の冷却温度は0℃以下であることを特徴とする請求項1から3のいずれかに記載の半導体デバイス。
- ビアホールエッチングの後に、前記エピ基板に付着した不純物が超音波洗浄によって剥離されていることを特徴とする請求項1から4のいずれかに記載の半導体デバイス。
- 前記超音波洗浄は、純水中で行われることを特徴とする請求項5に記載の半導体デバイス。
- 半導体デバイスの製造方法であって、
SiC(炭化珪素)基板および前記SiC基板上に形成されるGaN(窒化ガリウム)のエピ層を含むエピ基板に、トランジスタ素子を形成するステップと、
前記エピ基板の上側に、少なくともひとつの金属配線層および有機系の層間絶縁膜を含む多層配線構造を形成するステップと、
前記エピ基板の裏面を研磨するステップと、
前記エピ基板の裏面側から、前記有機系の層間絶縁膜が変質しない条件下で、ビアホールエッチングを施すステップと、
前記エピ基板の裏面およびビアホールの側壁をめっきするステップと、
を備えることを特徴とする製造方法。 - 前記めっきに先立ち、前記エピ基板に付着した不純物を超音波洗浄により剥離するステップをさらに備えることを特徴とする請求項7に記載の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016036774A JP2017157585A (ja) | 2016-02-29 | 2016-02-29 | 半導体デバイスおよびその製造方法 |
TW106103765A TW201742224A (zh) | 2016-02-29 | 2017-02-06 | 半導體元件及其製造方法 |
PCT/JP2017/004207 WO2017150080A1 (ja) | 2016-02-29 | 2017-02-06 | 半導体デバイスおよびその製造方法 |
US16/031,493 US20180323295A1 (en) | 2016-02-29 | 2018-07-10 | Semiconductor device and manufacturing method thereof |
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EP3657186B1 (en) * | 2017-07-18 | 2024-03-27 | Sang-Hun Lee | Rf power device capable of monitoring temperature and rf characteristics at wafer level |
WO2019066872A1 (en) * | 2017-09-28 | 2019-04-04 | Intel Corporation | MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR ON A COMPLEMENTARY TRANSISTOR |
US11652043B2 (en) | 2020-04-29 | 2023-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit structure with backside via |
DE102021102235A1 (de) * | 2020-04-29 | 2021-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierter schaltkreis mit rückseitiger durchkontaktierung |
US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
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JP2003530716A (ja) * | 2000-04-11 | 2003-10-14 | クリー インコーポレイテッド | 炭化珪素においてビアを形成する方法、及び得られるデバイスと回路 |
JP2006173595A (ja) * | 2004-11-22 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置及びそれを用いた車載レーダシステム |
JP2008085020A (ja) * | 2006-09-27 | 2008-04-10 | Nec Electronics Corp | 半導体装置 |
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US6563079B1 (en) * | 1999-02-25 | 2003-05-13 | Seiko Epson Corporation | Method for machining work by laser beam |
US7476918B2 (en) * | 2004-11-22 | 2009-01-13 | Panasonic Corporation | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
JP5888027B2 (ja) * | 2012-03-14 | 2016-03-16 | 富士通株式会社 | 半導体装置の製造方法 |
JP2016063167A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
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JP2003530716A (ja) * | 2000-04-11 | 2003-10-14 | クリー インコーポレイテッド | 炭化珪素においてビアを形成する方法、及び得られるデバイスと回路 |
JP2006173595A (ja) * | 2004-11-22 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置及びそれを用いた車載レーダシステム |
JP2008085020A (ja) * | 2006-09-27 | 2008-04-10 | Nec Electronics Corp | 半導体装置 |
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