JP6556872B2 - マイクロ波エネルギー伝送のためのマイクロ波集積回路(mmic)ダマシン電気インターコネクト - Google Patents
マイクロ波エネルギー伝送のためのマイクロ波集積回路(mmic)ダマシン電気インターコネクト Download PDFInfo
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- JP6556872B2 JP6556872B2 JP2017563537A JP2017563537A JP6556872B2 JP 6556872 B2 JP6556872 B2 JP 6556872B2 JP 2017563537 A JP2017563537 A JP 2017563537A JP 2017563537 A JP2017563537 A JP 2017563537A JP 6556872 B2 JP6556872 B2 JP 6556872B2
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
Description
Claims (6)
- マイクロ波伝送線路構造であって、
基板と、
前記基板の第1の部分の上に配置された半導体層であり、第1の電気デバイスが中に形成された半導体層と、
前記基板の第2の部分の上に配置された第2の電気デバイスであり、該第2の部分は、前記基板の前記第1の部分から横にずらされている、第2の電気デバイスと、
前記基板の前記第1の部分及び前記第2の部分の上に配置された誘電体構造であり、当該誘電体構造は、前記基板の前記第1の部分の上に配置された第1の部分及び前記基板の前記第2の部分の上に配置された第2の部分を有し、当該誘電体構造は、その上面に開放端トレンチを有する、誘電体構造と、
前記誘電体構造の前記上面に形成された前記トレンチ内に配置されたストリップ導体であり、横方向に前記基板の前記第1の部分及び前記第2の部分にわたって延在するストリップ導体と、
を有し、
前記ストリップ導体は、前記トレンチ内に上下に配置された複数の積層されたメタル層を有し、且つ
前記積層されたメタル層は、その底面及び側壁に配置された、導電バリアメタル層を有し、
前記ストリップ導体は、前記誘電体構造の前記第1の部分を縦方向に通り抜ける第1の導電ビアを介して前記第2の電気デバイスに電気的に接続された第1の底部と、前記誘電体構造の前記第2の部分を縦方向に通り抜ける第2の導電ビアを介して前記第1の電気デバイスに電気的に接続された、前記第1の底部から横にずらされた第2の底部とを有し、
前記ストリップ導体は、横方向に前記誘電体構造の前記第1の部分と前記第2の部分とにわたって、前記第1の電気デバイスと前記第2の電気デバイスとの間でマイクロ波エネルギーの一部を搬送し、
前記第1の電気デバイスは能動トランジスタデバイスであり、前記第2の電気デバイスは受動電気デバイスである、
マイクロ波伝送線路構造。 - 前記メタル層は銅である、請求項1に記載のマイクロ波伝送線路構造。
- 前記導電バリアメタル層は、Ta、TaN、TiN、又はこれらの組み合わせである、請求項2に記載のマイクロ波伝送線路構造。
- 前記複数の積層された金属層の各々が、およそ1ミクロンの厚さを有し、前記導電バリアメタル層の各々が、0.005−0.3ミクロンの厚さを有する、請求項1に記載のマイクロ波伝送線路構造。
- 当該マイクロ波伝送線路構造は、前記誘電体構造の第3の部分によって前記ストリップ導体から縦方向に離隔されたグランドプレーン導体を含み、前記誘電体構造の前記第3の部分は、横方向に前記誘電体構造の前記第1の部分と前記誘電体構造の前記第2の部分との間に配置され、前記グランドプレーン導体、前記誘電体構造の前記第3の部分、及び前記ストリップ導体が、前記第1の電気デバイスと前記第2の電気デバイスとの間でマイクロ波エネルギーを結合するマイクロストリップ伝送線路を提供する、請求項1に記載のマイクロ波伝送線路構造。
- 前記複数の積層された金属層の各々が、1ミクロン程度の厚さを有し、前記導電バリアメタル層の各々が、0.005−0.3ミクロンの厚さを有する、請求項5に記載のマイクロ波伝送線路構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/733,465 US9478508B1 (en) | 2015-06-08 | 2015-06-08 | Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmission |
US14/733,465 | 2015-06-08 | ||
PCT/US2016/034937 WO2016200638A1 (en) | 2015-06-08 | 2016-05-31 | Microwave integrated circuit (mmic) damascene electrical interconnect for microwave energy transmission |
Publications (2)
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JP2018518842A JP2018518842A (ja) | 2018-07-12 |
JP6556872B2 true JP6556872B2 (ja) | 2019-08-07 |
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JP2017563537A Active JP6556872B2 (ja) | 2015-06-08 | 2016-05-31 | マイクロ波エネルギー伝送のためのマイクロ波集積回路(mmic)ダマシン電気インターコネクト |
Country Status (5)
Country | Link |
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US (1) | US9478508B1 (ja) |
EP (1) | EP3304592B1 (ja) |
JP (1) | JP6556872B2 (ja) |
CN (1) | CN107690698B (ja) |
WO (1) | WO2016200638A1 (ja) |
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- 2016-05-31 WO PCT/US2016/034937 patent/WO2016200638A1/en active Application Filing
- 2016-05-31 EP EP16730939.2A patent/EP3304592B1/en active Active
- 2016-05-31 CN CN201680033773.7A patent/CN107690698B/zh active Active
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EP3304592A1 (en) | 2018-04-11 |
CN107690698B (zh) | 2021-10-08 |
CN107690698A (zh) | 2018-02-13 |
JP2018518842A (ja) | 2018-07-12 |
EP3304592B1 (en) | 2022-04-06 |
WO2016200638A1 (en) | 2016-12-15 |
US9478508B1 (en) | 2016-10-25 |
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