AU2001244719A1 - Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same - Google Patents
Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the sameInfo
- Publication number
- AU2001244719A1 AU2001244719A1 AU2001244719A AU4471901A AU2001244719A1 AU 2001244719 A1 AU2001244719 A1 AU 2001244719A1 AU 2001244719 A AU2001244719 A AU 2001244719A AU 4471901 A AU4471901 A AU 4471901A AU 2001244719 A1 AU2001244719 A1 AU 2001244719A1
- Authority
- AU
- Australia
- Prior art keywords
- acid
- composition containing
- same
- reactive group
- photoresist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/22—Esters containing halogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000102799 | 2000-04-04 | ||
JP2000-102799 | 2000-04-04 | ||
JP2000-177494 | 2000-06-13 | ||
JP2000177494 | 2000-06-13 | ||
JP2001-61896 | 2001-03-06 | ||
JP2001061896 | 2001-03-06 | ||
PCT/JP2001/002897 WO2001074916A1 (fr) | 2000-04-04 | 2001-04-03 | Fluoropolymere renfermant un groupe qui reagit aux acides et composition photoresist a amplification chimique contenant ledit fluoropolymere |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001244719A1 true AU2001244719A1 (en) | 2001-10-15 |
Family
ID=27342993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001244719A Abandoned AU2001244719A1 (en) | 2000-04-04 | 2001-04-03 | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
Country Status (8)
Country | Link |
---|---|
US (2) | US6908724B2 (ko) |
EP (1) | EP1275666A4 (ko) |
JP (1) | JP4923376B2 (ko) |
KR (1) | KR20030005177A (ko) |
CN (1) | CN1225486C (ko) |
AU (1) | AU2001244719A1 (ko) |
TW (1) | TW588220B (ko) |
WO (1) | WO2001074916A1 (ko) |
Families Citing this family (66)
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JP4780262B2 (ja) * | 2000-04-27 | 2011-09-28 | 信越化学工業株式会社 | 高分子化合物、化学増幅レジスト材料及びパターン形成方法 |
JP4554889B2 (ja) * | 2001-03-22 | 2010-09-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジスト組成物 |
JPWO2003007080A1 (ja) * | 2001-07-12 | 2004-11-04 | 株式会社半導体先端テクノロジーズ | 微細パターン形成方法 |
CN1527808A (zh) * | 2001-07-12 | 2004-09-08 | ͬ�Ϳ�ҵ��ʽ���� | 含氟降冰片烯衍生物的制备方法 |
JP4516250B2 (ja) * | 2001-09-13 | 2010-08-04 | パナソニック株式会社 | パターン形成材料及びパターン形成方法 |
TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
US7335454B2 (en) | 2001-12-13 | 2008-02-26 | Fujifilm Corporation | Positive resist composition |
JP2003186198A (ja) * | 2001-12-19 | 2003-07-03 | Sony Corp | レジスト材料及び露光方法 |
JP2003186197A (ja) * | 2001-12-19 | 2003-07-03 | Sony Corp | レジスト材料及び露光方法 |
EP1324133A1 (en) * | 2001-12-31 | 2003-07-02 | Shipley Co. L.L.C. | Photoresist compositions for short wavelength imaging |
DE10203839B4 (de) * | 2002-01-31 | 2007-10-18 | Infineon Technologies Ag | Resist für die Fotolithografie mit reaktiven Gruppen für eine nachträgliche Modifikation der Resiststrukturen |
DE10203838B4 (de) * | 2002-01-31 | 2006-12-28 | Infineon Technologies Ag | Fluorhaltiger Fotoresist mit Reaktionsankern für eine chemische Nachverstärkung und verbesserten Copolymerisationseigenschaften |
US6893792B2 (en) * | 2002-02-19 | 2005-05-17 | Sumitomo Chemical Company, Limited | Positive resist composition |
JP4010160B2 (ja) | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | レジスト組成物 |
US7358027B2 (en) | 2002-03-04 | 2008-04-15 | International Business Machines Corporation | Copolymer for use in chemical amplification resists |
JP2003330196A (ja) * | 2002-03-05 | 2003-11-19 | Jsr Corp | 感放射線性樹脂組成物 |
US7160666B2 (en) | 2002-03-06 | 2007-01-09 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
AU2003254841A1 (en) * | 2002-08-13 | 2004-03-03 | Daikin Industries, Ltd. | Optical material containing photocurable fluoropolymer and photocurable fluororesin composition |
AU2003262070A1 (en) * | 2002-09-13 | 2004-04-30 | Takayuki Araki | Process for production of fluoropolymers for resist |
AU2003273006A1 (en) * | 2002-10-18 | 2004-05-04 | Daikin Industries, Ltd. | Process for production of fluoropolymers and photoresist composition |
US20040091813A1 (en) * | 2002-11-05 | 2004-05-13 | Honeywell International Inc. | Fluorinated polymers |
CN100367113C (zh) * | 2002-12-11 | 2008-02-06 | 三星电子株式会社 | 用于形成共轭聚合物图案的组合物和使用该组合物形成共轭聚合物图案的方法 |
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US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
KR20050098955A (ko) * | 2003-02-21 | 2005-10-12 | 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. | 원자외선 리소그래피용 포토레지스트 조성물 |
US7781602B2 (en) * | 2003-04-25 | 2010-08-24 | Central Glass Company, Limited | Fluorinated cyclic compound, polymerizable fluoromonomer, fluoropolymer, resist material comprising the same, and method of forming pattern with the same |
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JP4355944B2 (ja) * | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
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JP6571639B2 (ja) * | 2013-06-14 | 2019-09-04 | スリーエム イノベイティブ プロパティズ カンパニー | ビニルペルフルオロアルキル又はビニルペルフルオロアルキレンオキシドペルフルオロビニルエーテルに由来するモノマー単位を含むフルオロポリマー |
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JP7140964B2 (ja) * | 2017-06-05 | 2022-09-22 | セントラル硝子株式会社 | 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法 |
JP6986986B2 (ja) * | 2018-01-30 | 2021-12-22 | 三井化学株式会社 | フッ素含有環状オレフィン系共重合体および成形体 |
JP7254917B2 (ja) * | 2019-05-29 | 2023-04-10 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、電子デバイスの製造方法 |
US20210364916A1 (en) * | 2020-05-21 | 2021-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of forming photoresist pattern |
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-
2001
- 2001-04-03 AU AU2001244719A patent/AU2001244719A1/en not_active Abandoned
- 2001-04-03 EP EP01917810A patent/EP1275666A4/en not_active Withdrawn
- 2001-04-03 WO PCT/JP2001/002897 patent/WO2001074916A1/ja not_active Application Discontinuation
- 2001-04-03 CN CNB018047963A patent/CN1225486C/zh not_active Expired - Lifetime
- 2001-04-03 JP JP2001572603A patent/JP4923376B2/ja not_active Expired - Fee Related
- 2001-04-03 TW TW090107955A patent/TW588220B/zh not_active IP Right Cessation
- 2001-04-03 KR KR1020027009866A patent/KR20030005177A/ko not_active Application Discontinuation
-
2002
- 2002-10-03 US US10/262,893 patent/US6908724B2/en not_active Expired - Lifetime
-
2005
- 2005-01-13 US US11/033,954 patent/US20050287471A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20030152864A1 (en) | 2003-08-14 |
EP1275666A4 (en) | 2007-10-24 |
CN1398271A (zh) | 2003-02-19 |
US20050287471A1 (en) | 2005-12-29 |
KR20030005177A (ko) | 2003-01-17 |
US6908724B2 (en) | 2005-06-21 |
WO2001074916A1 (fr) | 2001-10-11 |
CN1225486C (zh) | 2005-11-02 |
TW588220B (en) | 2004-05-21 |
JP4923376B2 (ja) | 2012-04-25 |
EP1275666A1 (en) | 2003-01-15 |
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