JPS6443512A - Phenyl alpha-trifluoromethylacrylate copolymer and its preparation - Google Patents
Phenyl alpha-trifluoromethylacrylate copolymer and its preparationInfo
- Publication number
- JPS6443512A JPS6443512A JP20053087A JP20053087A JPS6443512A JP S6443512 A JPS6443512 A JP S6443512A JP 20053087 A JP20053087 A JP 20053087A JP 20053087 A JP20053087 A JP 20053087A JP S6443512 A JPS6443512 A JP S6443512A
- Authority
- JP
- Japan
- Prior art keywords
- copolymer
- resist material
- trifluoromethylacrylate
- preparation
- dry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
PURPOSE:To obtain the title copolymer contg. two different kinds of alpha- trifluoromethylacrylic acid derivative units and providing a resist material which is excellent in heat resistance and dry-etching resistance and has a high sensitivity and a high resolution. CONSTITUTION:The title product is a copolymer contg. 1-99mol.% structural units of formula I (where R<1> is CH3; R<2> and R<3> are each CH3 or C6H5) and 99-1mol.% structural units of formula II. It provides a resist material which is excellent in heat resistance and dry-etching resistance and has higher concentration and resolution. This resist material is applied to the surface of a semiconductor substrate by a known method and submitted to prebaking, irradiation and development.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20053087A JPS6443512A (en) | 1987-08-10 | 1987-08-10 | Phenyl alpha-trifluoromethylacrylate copolymer and its preparation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20053087A JPS6443512A (en) | 1987-08-10 | 1987-08-10 | Phenyl alpha-trifluoromethylacrylate copolymer and its preparation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6443512A true JPS6443512A (en) | 1989-02-15 |
Family
ID=16425839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20053087A Pending JPS6443512A (en) | 1987-08-10 | 1987-08-10 | Phenyl alpha-trifluoromethylacrylate copolymer and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6443512A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153103A (en) * | 1990-03-13 | 1992-10-06 | Fujitsu Limited | Resist composition and pattern formation process |
WO2001074916A1 (en) * | 2000-04-04 | 2001-10-11 | Daikin Industries, Ltd. | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
US6683202B2 (en) | 2001-02-22 | 2004-01-27 | Tokyo Ohka, Kogyo Co., Ltd. | Fluorine-containing monomeric ester compound for base resin in photoresist composition |
-
1987
- 1987-08-10 JP JP20053087A patent/JPS6443512A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153103A (en) * | 1990-03-13 | 1992-10-06 | Fujitsu Limited | Resist composition and pattern formation process |
WO2001074916A1 (en) * | 2000-04-04 | 2001-10-11 | Daikin Industries, Ltd. | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
US6908724B2 (en) | 2000-04-04 | 2005-06-21 | Daikin Industries, Ltd. | Fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
US6683202B2 (en) | 2001-02-22 | 2004-01-27 | Tokyo Ohka, Kogyo Co., Ltd. | Fluorine-containing monomeric ester compound for base resin in photoresist composition |
US6846949B2 (en) | 2001-02-22 | 2005-01-25 | Tokyo Ohka Kogyo Co., Ltd. | Fluorine-containing monomeric ester compound for base resin in photoresist composition |
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