ATE453247T1 - Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung - Google Patents
Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellungInfo
- Publication number
- ATE453247T1 ATE453247T1 AT04716159T AT04716159T ATE453247T1 AT E453247 T1 ATE453247 T1 AT E453247T1 AT 04716159 T AT04716159 T AT 04716159T AT 04716159 T AT04716159 T AT 04716159T AT E453247 T1 ATE453247 T1 AT E453247T1
- Authority
- AT
- Austria
- Prior art keywords
- nitride
- nitride epitaxial
- electronic device
- production
- acoustic wave
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 abstract 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
- H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Magnetic Ceramics (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/378,331 US7112860B2 (en) | 2003-03-03 | 2003-03-03 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
PCT/US2004/006232 WO2004079904A2 (en) | 2003-03-03 | 2004-03-01 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE453247T1 true ATE453247T1 (de) | 2010-01-15 |
Family
ID=32926467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04716159T ATE453247T1 (de) | 2003-03-03 | 2004-03-01 | Integrierte nitridbasierte akustikwellenbauelemente und verfahren zu deren herstellung |
Country Status (9)
Country | Link |
---|---|
US (3) | US7112860B2 (de) |
EP (1) | EP1599938B1 (de) |
JP (1) | JP4740836B2 (de) |
KR (1) | KR101065096B1 (de) |
CN (1) | CN100557966C (de) |
AT (1) | ATE453247T1 (de) |
CA (1) | CA2516916C (de) |
DE (1) | DE602004024764D1 (de) |
WO (1) | WO2004079904A2 (de) |
Families Citing this family (170)
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EP1599938B1 (de) | 2009-12-23 |
JP4740836B2 (ja) | 2011-08-03 |
JP2006524016A (ja) | 2006-10-19 |
US20110114968A1 (en) | 2011-05-19 |
DE602004024764D1 (de) | 2010-02-04 |
WO2004079904A3 (en) | 2005-01-27 |
CN100557966C (zh) | 2009-11-04 |
US7112860B2 (en) | 2006-09-26 |
WO2004079904A2 (en) | 2004-09-16 |
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