KR920005249A - 집적된 실리콘 및 비-실리콘 반도체 장치의 제조방법 - Google Patents

집적된 실리콘 및 비-실리콘 반도체 장치의 제조방법 Download PDF

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KR920005249A
KR920005249A KR1019910014386A KR910014386A KR920005249A KR 920005249 A KR920005249 A KR 920005249A KR 1019910014386 A KR1019910014386 A KR 1019910014386A KR 910014386 A KR910014386 A KR 910014386A KR 920005249 A KR920005249 A KR 920005249A
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South Korea
Prior art keywords
silicon
semiconductor substrate
silicon semiconductor
silicon wafer
integrated
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KR1019910014386A
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KR100251817B1 (ko
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버트란드 에프. 캠보우
에이취. 밍 리아우
마모루 도모자네
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빈센트 죠셉 로너
모토로라 인코포레이티드
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Publication of KR920005249A publication Critical patent/KR920005249A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음

Description

집적된 실리콘 및 비-실리콘 반도체 장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 여러 단계의 제조에서 본 발명의 제1실시예를 확대시킨 단면도.
제3도는 본 발명의 제2실시예를 확대시킨 단면도.

Claims (3)

  1. 실리콘 웨이퍼를 제공하고, 상기 실리콘 웨이퍼에 비-실리콘 반도체 기판을 결합하고, 상기 비-실리콘 반도체 기판을 바람직한 두께로 얇게 하고, 부분적인 실리콘 웨이퍼를 노출시키기 위해 부분적인 비-실리콘 반도체 기판을 제거하는 스텝을 포함하고, 집적된 실리콘 및 비-실리콘 반도체 장치를 제조하는 방법.
  2. 실리콘 웨이퍼를 제공하고, 상기 실리콘 웨이퍼에 비-실리콘 반도체 기판을 결합하고, 상기 비-실리콘 반도체 기판을 바람직한 두께로 얇게 하고, 부분적인 실리콘 웨이퍼를 노출시키기 위해 부분적인 비-실리콘 반도체 기판을 제거하고, 부분적인 비-실리콘 반도체 기판이 제거되는 실리콘 웨이퍼상에서 실리콘을 선택적으로성장시키는 단계를 포함하고, 집적된 실리콘 및 비-실리콘 반도체 장치를 제조하는 방법.
  3. 실리콘 웨이퍼를 제공하고, 비-실리콘 반도체 기판을 실리콘 웨이퍼에 결합하고, 여기서 비-실리콘 반도체 기판이 실리콘 웨이퍼에 결합되는 표면상에서 형성된 웰을 갖고, 비-실리콘 반도체 기판을 최소한의 웰에 얇게 하는 스텝을 포함하고, 집적된 실리콘 및 비-실리콘 장치를 제조하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019910014386A 1990-08-31 1991-08-21 집적화된 실리콘 및 비실리콘 반도체장치의 제조방법 KR100251817B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US576,543 1990-08-31
US07/576,543 US5064781A (en) 1990-08-31 1990-08-31 Method of fabricating integrated silicon and non-silicon semiconductor devices

Publications (2)

Publication Number Publication Date
KR920005249A true KR920005249A (ko) 1992-03-28
KR100251817B1 KR100251817B1 (ko) 2000-05-01

Family

ID=24304866

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014386A KR100251817B1 (ko) 1990-08-31 1991-08-21 집적화된 실리콘 및 비실리콘 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US5064781A (ko)
JP (1) JPH04298037A (ko)
KR (1) KR100251817B1 (ko)
DE (1) DE4118593C2 (ko)

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DE4238137A1 (de) * 1992-11-12 1994-05-19 Ant Nachrichtentech Verfahren zur Herstellung von Vorrichtungen mit Bauelementen
US5346848A (en) * 1993-06-01 1994-09-13 Motorola, Inc. Method of bonding silicon and III-V semiconductor materials
US6250192B1 (en) * 1996-11-12 2001-06-26 Micron Technology, Inc. Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (en) 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) * 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US6992321B2 (en) * 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030022412A1 (en) * 2001-07-25 2003-01-30 Motorola, Inc. Monolithic semiconductor-piezoelectric device structures and electroacoustic charge transport devices
US20030034491A1 (en) * 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
EP2317554B1 (en) * 2009-10-30 2014-04-09 Imec Integrated semiconductor substrate structure and method of manufacturing an integrated semiconductor substrate structure
US8530938B2 (en) * 2009-12-10 2013-09-10 International Rectifier Corporation Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
US8912055B2 (en) 2011-05-03 2014-12-16 Imec Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby

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JPH01226167A (ja) * 1988-03-07 1989-09-08 Seiko Epson Corp 半導体装置基板の製造方法

Also Published As

Publication number Publication date
JPH04298037A (ja) 1992-10-21
KR100251817B1 (ko) 2000-05-01
US5064781A (en) 1991-11-12
DE4118593C2 (de) 2001-04-05
DE4118593A1 (de) 1992-03-05

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