DE60123709D1 - Herstellungsverfahren einer hybriden integrierten schaltung mit einem halbleiterbauelement und einem piezoelektrischen filter - Google Patents

Herstellungsverfahren einer hybriden integrierten schaltung mit einem halbleiterbauelement und einem piezoelektrischen filter

Info

Publication number
DE60123709D1
DE60123709D1 DE60123709T DE60123709T DE60123709D1 DE 60123709 D1 DE60123709 D1 DE 60123709D1 DE 60123709 T DE60123709 T DE 60123709T DE 60123709 T DE60123709 T DE 60123709T DE 60123709 D1 DE60123709 D1 DE 60123709D1
Authority
DE
Germany
Prior art keywords
layer
electrode
piezoelectric
situated
acoustic reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60123709T
Other languages
English (en)
Other versions
DE60123709T2 (de
Inventor
Ronald Dekker
M Dolmans
Lukas Leyten
G Maas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE60123709D1 publication Critical patent/DE60123709D1/de
Application granted granted Critical
Publication of DE60123709T2 publication Critical patent/DE60123709T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Networks Using Active Elements (AREA)
DE60123709T 2000-02-22 2001-02-09 Herstellungsverfahren einer hybriden integrierten schaltung mit einem halbleiterbauelement und einem piezoelektrischen filter Expired - Lifetime DE60123709T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00200614 2000-02-22
EP00200614 2000-02-22
PCT/EP2001/001500 WO2001063758A1 (en) 2000-02-22 2001-02-09 Method of manufacturing a hybrid integrated circuit comprising a semiconductor element and a piezoelectric filter

Publications (2)

Publication Number Publication Date
DE60123709D1 true DE60123709D1 (de) 2006-11-23
DE60123709T2 DE60123709T2 (de) 2007-09-20

Family

ID=8171061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60123709T Expired - Lifetime DE60123709T2 (de) 2000-02-22 2001-02-09 Herstellungsverfahren einer hybriden integrierten schaltung mit einem halbleiterbauelement und einem piezoelektrischen filter

Country Status (8)

Country Link
US (1) US6379987B1 (de)
EP (1) EP1175727B1 (de)
JP (1) JP4843175B2 (de)
KR (1) KR100791657B1 (de)
AT (1) ATE342608T1 (de)
DE (1) DE60123709T2 (de)
TW (1) TW533609B (de)
WO (1) WO2001063758A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020029882A (ko) * 2002-03-02 2002-04-20 주식회사 에이엔티 엘시엠피 공정법에 의한 탄성파소자의 제작방법
FR2890490A1 (fr) * 2005-09-05 2007-03-09 St Microelectronics Sa Support de resonateur acoustique et circuit integre correspondant
KR100934957B1 (ko) * 2008-02-22 2010-01-06 한국과학기술연구원 압전 폴리머 기판을 이용한 하이브리드 전기소자와 그제조방법
US20120163131A1 (en) * 2010-12-22 2012-06-28 Sondex Limited Mono-directional Ultrasound Transducer for Borehole Imaging
DE102017130926A1 (de) * 2017-12-21 2019-06-27 RF360 Europe GmbH Waferanordnung, Verfahren zur Fertigung von derselben und Hybridfilter
DE102017130924B3 (de) * 2017-12-21 2019-05-16 RF360 Europe GmbH Hybridfilter
EA035222B1 (ru) * 2018-10-09 2020-05-18 Открытое акционерное общество "Межгосударственная Корпорация Развития" Монолитный пьезоэлектрический фильтр

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414832A (en) * 1964-12-04 1968-12-03 Westinghouse Electric Corp Acoustically resonant device
JPS58137317A (ja) * 1982-02-09 1983-08-15 Nec Corp 圧電薄膜複合振動子
JPS6175614A (ja) * 1984-09-21 1986-04-18 Nec Corp 薄膜圧電振動子の製造方法
JPH04184985A (ja) * 1990-11-20 1992-07-01 Canon Inc 圧電体変位素子の製造方法
US5646583A (en) * 1996-01-04 1997-07-08 Rockwell International Corporation Acoustic isolator having a high impedance layer of hafnium oxide
JP3809712B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 薄膜デバイスの転写方法
EP0895090B1 (de) * 1997-07-31 2003-12-10 STMicroelectronics S.r.l. Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden
DE69734280D1 (de) * 1997-07-10 2006-02-09 St Microelectronics Srl Verfahren zur Herstellung von hochempfindlichen, kapazitiven und resonierenden integrierten Sensoren, insbesondere Beschleunigungsmesser und Kreisel, und damit hergestellte Sensoren
KR100316383B1 (ko) * 1998-10-30 2002-02-19 윤덕용 모노리딕직접회로위에박막또는후막단결정압전소자를집적한단일칩라디오구조및그제조방법
WO2001063759A1 (en) * 2000-02-22 2001-08-30 Koninklijke Philips Electronics N.V. Method of manufacturing a piezoeletric filter with an acoustic resonator situated on an acoustic reflector layer formed on a carrier substrate

Also Published As

Publication number Publication date
US20020031855A1 (en) 2002-03-14
ATE342608T1 (de) 2006-11-15
JP4843175B2 (ja) 2011-12-21
WO2001063758A1 (en) 2001-08-30
JP2003524902A (ja) 2003-08-19
KR20020000631A (ko) 2002-01-05
US6379987B1 (en) 2002-04-30
EP1175727B1 (de) 2006-10-11
KR100791657B1 (ko) 2008-01-03
EP1175727A1 (de) 2002-01-30
DE60123709T2 (de) 2007-09-20
TW533609B (en) 2003-05-21

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL