ATE425552T1 - Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren - Google Patents

Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren

Info

Publication number
ATE425552T1
ATE425552T1 AT02794081T AT02794081T ATE425552T1 AT E425552 T1 ATE425552 T1 AT E425552T1 AT 02794081 T AT02794081 T AT 02794081T AT 02794081 T AT02794081 T AT 02794081T AT E425552 T1 ATE425552 T1 AT E425552T1
Authority
AT
Austria
Prior art keywords
capacitors
layer
dielectric layers
chamber
electrode material
Prior art date
Application number
AT02794081T
Other languages
English (en)
Inventor
Denise Eppich
Kevin Beaman
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE425552T1 publication Critical patent/ATE425552T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AT02794081T 2001-12-03 2002-11-27 Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren ATE425552T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/006,032 US6723599B2 (en) 2001-12-03 2001-12-03 Methods of forming capacitors and methods of forming capacitor dielectric layers

Publications (1)

Publication Number Publication Date
ATE425552T1 true ATE425552T1 (de) 2009-03-15

Family

ID=21718952

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02794081T ATE425552T1 (de) 2001-12-03 2002-11-27 Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren

Country Status (9)

Country Link
US (2) US6723599B2 (de)
EP (1) EP1451862B1 (de)
JP (1) JP4017601B2 (de)
KR (1) KR100542931B1 (de)
CN (1) CN100380611C (de)
AT (1) ATE425552T1 (de)
AU (1) AU2002359536A1 (de)
DE (1) DE60231539D1 (de)
WO (1) WO2003049159A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686298B1 (en) * 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6833329B1 (en) * 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6660657B1 (en) * 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
US6878585B2 (en) * 2001-08-29 2005-04-12 Micron Technology, Inc. Methods of forming capacitors
JP3892846B2 (ja) * 2003-11-27 2007-03-14 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7700479B2 (en) * 2006-11-06 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning processes in the formation of integrated circuit interconnect structures
US7928020B2 (en) * 2007-09-27 2011-04-19 Chartered Semiconductor Manufacturing Ltd. Method of fabricating a nitrogenated silicon oxide layer and MOS device having same
CN101577227B (zh) * 2008-05-05 2011-07-06 中芯国际集成电路制造(北京)有限公司 氮化硅薄膜及mim电容的形成方法
CN102709335B (zh) * 2012-05-08 2014-12-10 常州天合光能有限公司 一种利用SiN薄膜针孔形成局部掺杂或金属化的方法
KR101919422B1 (ko) 2012-09-28 2019-02-08 삼성전자주식회사 질화물 반도체 기반의 파워 변환 장치
CN105575952A (zh) * 2014-10-11 2016-05-11 中芯国际集成电路制造(上海)有限公司 Mim电容结构及其制作方法
US12486562B2 (en) 2020-06-15 2025-12-02 Vapor Technologies, Inc. Anti-microbial coating physical vapor deposition such as cathodic arc evaporation
US11821075B2 (en) * 2020-06-15 2023-11-21 Vapor Technologies, Inc. Anti-microbial coating physical vapor deposition such as cathodic arc evaporation
US20230268419A1 (en) * 2022-02-23 2023-08-24 Haitao Liu Devices having a transistor with a modified channel region

Family Cites Families (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627598A (en) 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
DE2967538D1 (en) 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
JPS5587444A (en) 1978-12-26 1980-07-02 Fujitsu Ltd Method of forming insulating film on semiconductor surface
US4254161A (en) 1979-08-16 1981-03-03 International Business Machines Corporation Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
US4262631A (en) 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
GB2140202A (en) 1983-05-16 1984-11-21 Philips Electronic Associated Methods of manufacturing semiconductor devices
CA1252372A (en) 1985-01-21 1989-04-11 Joseph P. Ellul Nitsinitride and oxidized nitsinitride dielectrics on silicon
GB2193976B (en) 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JPS6338248A (ja) 1986-08-04 1988-02-18 Hitachi Ltd 半導体装置およびその製造方法
CA1306072C (en) 1987-03-30 1992-08-04 John E. Cronin Refractory metal - titanium nitride conductive structures and processes for forming the same
KR100212098B1 (ko) 1987-09-19 1999-08-02 가나이 쓰도무 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
US4882649A (en) 1988-03-29 1989-11-21 Texas Instruments Incorporated Nitride/oxide/nitride capacitor dielectric
JPH088311B2 (ja) 1988-07-05 1996-01-29 株式会社東芝 紫外線消去型不揮発性半導体記憶装置
KR920006736B1 (ko) 1989-11-08 1992-08-17 삼성전자 주식회사 반도체장치 및 그 제조방법
JPH04144278A (ja) 1990-10-05 1992-05-18 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US5254489A (en) 1990-10-18 1993-10-19 Nec Corporation Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation
US5032545A (en) 1990-10-30 1991-07-16 Micron Technology, Inc. Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
KR940011483B1 (ko) 1990-11-28 1994-12-19 가부시끼가이샤 도시바 반도체 디바이스를 제조하기 위한 방법 및 이 방법에 의해 제조되는 반도체 디바이스
KR920018987A (ko) 1991-03-23 1992-10-22 김광호 캐패시터의 제조방법
KR940011801B1 (ko) 1991-03-23 1994-12-26 삼성전자 주식회사 고용량 캐패시터를 포함하는 반도체 장치 및 그의 제조방법
JP2687758B2 (ja) 1991-05-27 1997-12-08 日本電気株式会社 半導体装置の製造方法
JP2723396B2 (ja) 1991-09-19 1998-03-09 シャープ株式会社 不揮発性メモリ装置の製造方法
US5164331A (en) 1991-10-03 1992-11-17 Hewlett-Packard Company Method of forming and etching titanium-tungsten interconnects
JPH05243178A (ja) 1991-10-03 1993-09-21 Hewlett Packard Co <Hp> 半導体集積回路用相互接続体形成方法
JPH05102419A (ja) 1991-10-07 1993-04-23 Sony Corp ダイナミツクｒａｍにおける容量の形成方法
US5142438A (en) 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5350707A (en) 1991-11-19 1994-09-27 Samsung Electronics Co., Ltd. Method for making a capacitor having an electrode surface with a plurality of trenches formed therein
US5397748A (en) 1991-12-28 1995-03-14 Nec Corporation Method of producing semiconductor device with insulating film having at least silicon nitride film
US5334554A (en) 1992-01-24 1994-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Nitrogen plasma treatment to prevent field device leakage in VLSI processing
JP3071302B2 (ja) 1992-05-21 2000-07-31 沖電気工業株式会社 半導体素子の製造方法
US5258333A (en) 1992-08-18 1993-11-02 Intel Corporation Composite dielectric for a semiconductor device and method of fabrication
CN1560691B (zh) * 1992-08-27 2010-05-26 株式会社半导体能源研究所 半导体器件及其制造方法和有源矩阵显示器
US5445999A (en) 1992-11-13 1995-08-29 Micron Technology, Inc. Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation
US5376593A (en) 1992-12-31 1994-12-27 Micron Semiconductor, Inc. Method for fabricating stacked layer Si3 N4 for low leakage high capacitance films using rapid thermal nitridation
US5436481A (en) 1993-01-21 1995-07-25 Nippon Steel Corporation MOS-type semiconductor device and method of making the same
KR960002086B1 (ko) 1993-04-16 1996-02-10 엘지전자주식회사 박막 트랜지스터의 제조방법
US5464792A (en) 1993-06-07 1995-11-07 Motorola, Inc. Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device
US5330920A (en) 1993-06-15 1994-07-19 Digital Equipment Corporation Method of controlling gate oxide thickness in the fabrication of semiconductor devices
US5382533A (en) 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection
US5393702A (en) 1993-07-06 1995-02-28 United Microelectronics Corporation Via sidewall SOG nitridation for via filling
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5398641A (en) 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5596218A (en) 1993-10-18 1997-01-21 Digital Equipment Corporation Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation
KR100362751B1 (ko) 1994-01-19 2003-02-11 소니 가부시끼 가이샤 반도체소자의콘택트홀및그형성방법
US5716864A (en) 1994-07-22 1998-02-10 Nkk Corporation Method of manufacturing a non-volatile semiconductor memory device with peripheral transistor
US5518958A (en) 1994-07-29 1996-05-21 International Business Machines Corporation Prevention of agglomeration and inversion in a semiconductor polycide process
US5449631A (en) 1994-07-29 1995-09-12 International Business Machines Corporation Prevention of agglomeration and inversion in a semiconductor salicide process
US5620908A (en) 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
US5508542A (en) 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
JPH08250488A (ja) 1995-01-13 1996-09-27 Seiko Epson Corp プラズマ処理装置及びその方法
US5633036A (en) 1995-04-21 1997-05-27 The Board Of Trustees Of The University Of Illinois Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions
EP1111673A1 (de) 1995-05-10 2001-06-27 STMicroelectronics S.r.l. Herstellungsverfahren eines integrierten MOS-Schaltkreises mit Bestandteilen mit unterschiedlichen Dielektrika
JP2871530B2 (ja) 1995-05-10 1999-03-17 日本電気株式会社 半導体装置の製造方法
US5674788A (en) 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
KR0167248B1 (ko) 1995-07-24 1999-02-01 문정환 반도체 기판의 전처리방법
US5612558A (en) 1995-11-15 1997-03-18 Micron Technology, Inc. Hemispherical grained silicon on refractory metal nitride
US5837592A (en) 1995-12-07 1998-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stabilizing polysilicon resistors
JPH1079506A (ja) 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US5821142A (en) 1996-04-08 1998-10-13 Vanguard International Semiconductor Method for forming a capacitor with a multiple pillar structure
US6174821B1 (en) 1996-05-09 2001-01-16 Micron Technology, Inc. Semiconductor processing method of depositing polysilicon
JP3876473B2 (ja) 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法
US6110842A (en) 1996-06-07 2000-08-29 Texas Instruments Incorporated Method of forming multiple gate oxide thicknesses using high density plasma nitridation
US5843830A (en) 1996-06-26 1998-12-01 Micron Technology, Inc. Capacitor, and methods for forming a capacitor
US6040249A (en) 1996-08-12 2000-03-21 Texas Instruments Incorporated Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy
US5731235A (en) 1996-10-30 1998-03-24 Micron Technology, Inc. Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor
US5969397A (en) 1996-11-26 1999-10-19 Texas Instruments Incorporated Low defect density composite dielectric
US5897354A (en) 1996-12-17 1999-04-27 Cypress Semiconductor Corporation Method of forming a non-volatile memory device with ramped tunnel dielectric layer
US5960302A (en) 1996-12-31 1999-09-28 Lucent Technologies, Inc. Method of making a dielectric for an integrated circuit
US5840610A (en) 1997-01-16 1998-11-24 Advanced Micro Devices, Inc. Enhanced oxynitride gate dielectrics using NF3 gas
JP3090074B2 (ja) 1997-01-20 2000-09-18 日本電気株式会社 半導体装置及びその製造方法
US6096597A (en) 1997-01-31 2000-08-01 Texas Instruments Incorporated Method for fabricating an integrated circuit structure
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US5861651A (en) 1997-02-28 1999-01-19 Lucent Technologies Inc. Field effect devices and capacitors with improved thin film dielectrics and method for making same
US5763922A (en) 1997-02-28 1998-06-09 Intel Corporation CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers
JPH10247725A (ja) 1997-03-05 1998-09-14 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5837598A (en) 1997-03-13 1998-11-17 Lsi Logic Corporation Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
US5885877A (en) 1997-04-21 1999-03-23 Advanced Micro Devices, Inc. Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric
US6080629A (en) 1997-04-21 2000-06-27 Advanced Micro Devices, Inc. Ion implantation into a gate electrode layer using an implant profile displacement layer
US5920779A (en) 1997-05-21 1999-07-06 United Microelectronics Corp. Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits
US6146948A (en) 1997-06-03 2000-11-14 Motorola Inc. Method for manufacturing a thin oxide for use in semiconductor integrated circuits
JP3222404B2 (ja) 1997-06-20 2001-10-29 科学技術振興事業団 半導体基板表面の絶縁膜の形成方法及びその形成装置
US5851603A (en) 1997-07-14 1998-12-22 Vanguard International Semiconductor Corporation Method for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applications
US6057220A (en) 1997-09-23 2000-05-02 International Business Machines Corporation Titanium polycide stabilization with a porous barrier
US5998253A (en) 1997-09-29 1999-12-07 Siemens Aktiengesellschaft Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell
AU750612B2 (en) 1997-10-22 2002-07-25 Texas Instruments Incorporated Integrated circuit having both low voltage and high voltage mos transistors and method of making
US6063713A (en) 1997-11-10 2000-05-16 Micron Technology, Inc. Methods for forming silicon nitride layers on silicon-comprising substrates
US6399445B1 (en) 1997-12-18 2002-06-04 Texas Instruments Incorporated Fabrication technique for controlled incorporation of nitrogen in gate dielectric
US6080682A (en) 1997-12-18 2000-06-27 Advanced Micro Devices, Inc. Methodology for achieving dual gate oxide thicknesses
US6228701B1 (en) 1997-12-19 2001-05-08 Seimens Aktiengesellschaft Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs
US6331492B2 (en) 1997-12-31 2001-12-18 Texas Instruments Incorporated Nitridation for split gate multiple voltage devices
US6268296B1 (en) 1997-12-31 2001-07-31 Texas Instruments Incorporated Low temperature process for multiple voltage devices
US5939750A (en) 1998-01-21 1999-08-17 Advanced Micro Devices Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
US6207985B1 (en) 1998-02-02 2001-03-27 Texas Instruments Incorporated DRAM memory cell and array having pass transistors with surrounding gate
US6150226A (en) 1998-02-03 2000-11-21 Micron Technology, Inc. Semiconductor processing methods, methods of forming capacitors, methods of forming silicon nitride, and methods of densifying silicon nitride layers
US6033998A (en) 1998-03-09 2000-03-07 Lsi Logic Corporation Method of forming variable thickness gate dielectrics
US6087229A (en) 1998-03-09 2000-07-11 Lsi Logic Corporation Composite semiconductor gate dielectrics
US6136636A (en) 1998-03-25 2000-10-24 Texas Instruments - Acer Incorporated Method of manufacturing deep sub-micron CMOS transistors
US6001710A (en) 1998-03-30 1999-12-14 Spectrian, Inc. MOSFET device having recessed gate-drain shield and method
US6008104A (en) 1998-04-06 1999-12-28 Siemens Aktiengesellschaft Method of fabricating a trench capacitor with a deposited isolation collar
US6001741A (en) * 1998-04-15 1999-12-14 Lucent Technologies Inc. Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices
US6184110B1 (en) 1998-04-30 2001-02-06 Sharp Laboratories Of America, Inc. Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
JP3194370B2 (ja) 1998-05-11 2001-07-30 日本電気株式会社 半導体装置とその製造方法
US20020009861A1 (en) * 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
JP2000003965A (ja) 1998-06-15 2000-01-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5960289A (en) 1998-06-22 1999-09-28 Motorola, Inc. Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region
US6274442B1 (en) 1998-07-15 2001-08-14 Advanced Micro Devices, Inc. Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same
US6197701B1 (en) 1998-10-23 2001-03-06 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6207586B1 (en) 1998-10-28 2001-03-27 Lucent Technologies Inc. Oxide/nitride stacked gate dielectric and associated methods
US6051865A (en) * 1998-11-09 2000-04-18 Advanced Micro Devices, Inc. Transistor having a barrier layer below a high permittivity gate dielectric
US6323114B1 (en) 1998-11-24 2001-11-27 Texas Instruments Incorporated Stacked/composite gate dielectric which incorporates nitrogen at an interface
US6087236A (en) 1998-11-24 2000-07-11 Intel Corporation Integrated circuit with multiple gate dielectric structures
US6140187A (en) 1998-12-02 2000-10-31 Lucent Technologies Inc. Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate
JP2000174132A (ja) 1998-12-08 2000-06-23 Matsushita Electronics Industry Corp 半導体装置の製造方法
US6245616B1 (en) 1999-01-06 2001-06-12 International Business Machines Corporation Method of forming oxynitride gate dielectric
US6100163A (en) 1999-01-07 2000-08-08 Taiwan Semiconductor Manufacturing Company Gap filling of shallow trench isolation by ozone-tetraethoxysilane
JP3973819B2 (ja) 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
KR100745495B1 (ko) 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
US6110780A (en) 1999-04-01 2000-08-29 Taiwan Semiconductor Manufacturing Company Using NO or N2 O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory
US6171900B1 (en) 1999-04-15 2001-01-09 Taiwan Semiconductor Manufacturing Company CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6255703B1 (en) 1999-06-02 2001-07-03 Advanced Micro Devices, Inc. Device with lower LDD resistance
US6093661A (en) 1999-08-30 2000-07-25 Micron Technology, Inc. Integrated circuitry and semiconductor processing method of forming field effect transistors
US6350707B1 (en) 1999-09-03 2002-02-26 United Microelectronics Corp. Method of fabricating capacitor dielectric
US6297162B1 (en) 1999-09-27 2001-10-02 Taiwan Semiconductor Manufacturing Company Method to reduce silicon oxynitride etch rate in a silicon oxide dry etch
US6207532B1 (en) 1999-09-30 2001-03-27 Taiwan Semiconductor Manufacturing Company STI process for improving isolation for deep sub-micron application
US6201303B1 (en) 1999-10-14 2001-03-13 Advanced Micro Devices, Inc. Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide
US6399448B1 (en) 1999-11-19 2002-06-04 Chartered Semiconductor Manufacturing Ltd. Method for forming dual gate oxide
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US6413881B1 (en) 2000-03-09 2002-07-02 Lsi Logic Corporation Process for forming thin gate oxide with enhanced reliability by nitridation of upper surface of gate of oxide to form barrier of nitrogen atoms in upper surface region of gate oxide, and resulting product
US6225167B1 (en) 2000-03-13 2001-05-01 Taiwan Semiconductor Manufacturing Company Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation
US6833329B1 (en) 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6649543B1 (en) 2000-06-22 2003-11-18 Micron Technology, Inc. Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
US6686298B1 (en) 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6362085B1 (en) 2000-07-19 2002-03-26 Taiwan Semiconductor Manufacturing Company Method for reducing gate oxide effective thickness and leakage current
US6660657B1 (en) 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
US6436771B1 (en) 2001-07-12 2002-08-20 Taiwan Semiconductor Manufacturing Company Method of forming a semiconductor device with multiple thickness gate dielectric layers
US6878585B2 (en) 2001-08-29 2005-04-12 Micron Technology, Inc. Methods of forming capacitors
KR100482758B1 (ko) 2002-12-12 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
US6723599B2 (en) 2004-04-20
DE60231539D1 (de) 2009-04-23
US7153736B2 (en) 2006-12-26
JP4017601B2 (ja) 2007-12-05
US20040161889A1 (en) 2004-08-19
AU2002359536A1 (en) 2003-06-17
EP1451862B1 (de) 2009-03-11
US20030104669A1 (en) 2003-06-05
AU2002359536A8 (en) 2003-06-17
EP1451862A2 (de) 2004-09-01
KR20050058260A (ko) 2005-06-16
WO2003049159A3 (en) 2004-01-15
WO2003049159A2 (en) 2003-06-12
JP2005539366A (ja) 2005-12-22
CN1701423A (zh) 2005-11-23
WO2003049159A8 (en) 2005-03-10
KR100542931B1 (ko) 2006-01-11
CN100380611C (zh) 2008-04-09

Similar Documents

Publication Publication Date Title
US6544875B1 (en) Chemical vapor deposition of silicate high dielectric constant materials
ATE425552T1 (de) Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren
WO2003041124A3 (en) Method of fabricating a gate stack at low temperature
JP2835723B2 (ja) キャパシタ及びキャパシタの製造方法
KR950021655A (ko) 반도체 장치 제조 방법
KR920018872A (ko) 반도체 디바이스에 있어서의 유전체막(誘電體膜)의 형성방법
TW200505033A (en) Capacitor and method of fabricating the same
TWI264113B (en) Semiconductor memory device and method for manufacturing semiconductor device
KR100752559B1 (ko) 유전체막의 형성 방법
KR960036060A (ko) 반도체 장치의 고유전막/전극 및 그 제조방법
TW200618121A (en) Method of forming a semiconductor device and structure thereof
WO2009049050A3 (en) Formation of nitrogen containing dielectric layers having an improved nitrogen distribution
TW350117B (en) Method for manufacturing capacitor of semiconductor device
US6642117B1 (en) Method for forming composite dielectric layer
EP1341220A3 (de) Herstellungsverfahren eines Halbleiterbauelements
KR100373160B1 (ko) 반도체 소자의 캐패시터 제조방법
KR100670671B1 (ko) 반도체 소자의 하프늄 산화막 형성방법
KR100297100B1 (ko) 반도체 소자의 캐패시터 제조 방법
KR100788369B1 (ko) 피아이피 구조의 커패시터 및 그 제조 방법
JPWO2004082011A1 (ja) 半導体装置と半導体装置の製造方法
KR980005438A (ko) 도전층 형성 방법
JPH1041467A (ja) 薄膜コンデンサの製造方法
JPH0555198A (ja) 半導体装置の製造方法
TW353779B (en) Method of producing semiconductor capacitor and structure thereof
JPS6442840A (en) Semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties