ATE425552T1 - Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren - Google Patents

Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren

Info

Publication number
ATE425552T1
ATE425552T1 AT02794081T AT02794081T ATE425552T1 AT E425552 T1 ATE425552 T1 AT E425552T1 AT 02794081 T AT02794081 T AT 02794081T AT 02794081 T AT02794081 T AT 02794081T AT E425552 T1 ATE425552 T1 AT E425552T1
Authority
AT
Austria
Prior art keywords
capacitors
layer
dielectric layers
chamber
electrode material
Prior art date
Application number
AT02794081T
Other languages
English (en)
Inventor
Denise Eppich
Kevin Beaman
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE425552T1 publication Critical patent/ATE425552T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10P14/69215—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10P95/00—
    • H10P14/6336—
    • H10P14/662—
    • H10P14/69433—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AT02794081T 2001-12-03 2002-11-27 Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren ATE425552T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/006,032 US6723599B2 (en) 2001-12-03 2001-12-03 Methods of forming capacitors and methods of forming capacitor dielectric layers

Publications (1)

Publication Number Publication Date
ATE425552T1 true ATE425552T1 (de) 2009-03-15

Family

ID=21718952

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02794081T ATE425552T1 (de) 2001-12-03 2002-11-27 Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren

Country Status (9)

Country Link
US (2) US6723599B2 (de)
EP (1) EP1451862B1 (de)
JP (1) JP4017601B2 (de)
KR (1) KR100542931B1 (de)
CN (1) CN100380611C (de)
AT (1) ATE425552T1 (de)
AU (1) AU2002359536A1 (de)
DE (1) DE60231539D1 (de)
WO (1) WO2003049159A2 (de)

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KR100482758B1 (ko) * 2002-12-12 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 제조 방법

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US20040161889A1 (en) 2004-08-19
US20030104669A1 (en) 2003-06-05
US6723599B2 (en) 2004-04-20
CN100380611C (zh) 2008-04-09
JP4017601B2 (ja) 2007-12-05
WO2003049159A2 (en) 2003-06-12
WO2003049159A3 (en) 2004-01-15
KR20050058260A (ko) 2005-06-16
EP1451862B1 (de) 2009-03-11
AU2002359536A1 (en) 2003-06-17
JP2005539366A (ja) 2005-12-22
CN1701423A (zh) 2005-11-23
KR100542931B1 (ko) 2006-01-11
EP1451862A2 (de) 2004-09-01
US7153736B2 (en) 2006-12-26
DE60231539D1 (de) 2009-04-23
AU2002359536A8 (en) 2003-06-17
WO2003049159A8 (en) 2005-03-10

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