TWI783382B - 基板處理裝置,排氣裝置及半導體裝置的製造方法 - Google Patents

基板處理裝置,排氣裝置及半導體裝置的製造方法 Download PDF

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TWI783382B
TWI783382B TW110106040A TW110106040A TWI783382B TW I783382 B TWI783382 B TW I783382B TW 110106040 A TW110106040 A TW 110106040A TW 110106040 A TW110106040 A TW 110106040A TW I783382 B TWI783382 B TW I783382B
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gas
containing gas
aforementioned
metal
processing chamber
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TW202138614A (zh
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山崎裕久
寿崎健一
永冨佳将
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日商國際電氣股份有限公司
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Abstract

本發明的課題是在於提供一種抑制捕集效率的降低,且抑制泵排氣性能的降低之技術。 其解決手段是提供一種具有:處理基板的處理室、供給含金屬氣體至處理室內的第1氣體供給部、及將含有含金屬氣體成分的排氣氣體予以從處理室內排氣的排氣部,排氣部是具備:氣體排氣管、將處理室內排氣的泵、輔助泵的輔助泵、及被設在泵與輔助泵之間,用以藉由電漿來捕集含金屬氣體成分的捕捉部之技術。

Description

基板處理裝置,排氣裝置及半導體裝置的製造方法
本案是有關基板處理裝置,排氣裝置及半導體裝置的製造方法。
在半導體製造裝置的成膜製程中,使用各種的液體原料。在成膜製程中,藉由CVD、ALD等的手法來氣化的成膜原料會往反應室供給,通過排氣配管,以真空泵來排氣至除去裝置。在其過程中,依成膜原料的材料特性,有成膜原料的液化、熱分解、成膜反應之副生成物的產生等各種的障礙產生的可能性。
特別是在真空泵中,內部的轉子(rotor)機構會有因副生成物的堆積而停止的情況,所以在反應室與真空泵間設置捕捉成膜原料的捕捉(trap)機構。但,捕捉機構為了容易捕捉成膜原料,而採用複雜的構造,有排氣傳導變小的傾向。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2012-174725號公報
(發明所欲解決的課題)
如上述般,為了捕集液體原料或副生成物等,而在反應室與真空泵間設置捕捉機構,因此若增大排氣傳導,則捕集效率會降低。又,相反的為了提高捕集效率,若縮小排氣傳導,則成為使泵排氣性能降低的相反的關係。因此,對於液體原料,有無法取得充分的捕集效率,或排氣傳導變小的課題。
本案的目的是在於提供一種抑制捕集效率的降低,且抑制泵排氣性能的降低之技術。 (用以解決課題的手段)
若根據本案之一形態,則可提供一種具有: 處理基板的處理室; 供給含金屬氣體至前述處理室內的第1氣體供給部;及 將含有含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部, 前述排氣部,係具備: 氣體排氣管; 將前述處理室內排氣的泵; 輔助該泵的輔助泵;及 被設在前述泵與前述輔助泵之間,用以藉由電漿來捕集前述含金屬氣體成分的捕捉部之技術。 [發明的效果]
若根據本案,則可抑制捕集效率的降低,且可抑制泵排氣性能的降低。
(1)基板處理裝置的構成
以下,利用圖面說明有關實施形態。但,在以下的說明中,有對於相同構成要素附上相同符號,省略重複的說明的情形。另外,圖面為了更明確說明,而有與實際的形態作比較,針對各部的寬度、厚度、形狀等模式性地表示的情況,但到底是一例,不是限定本案的解釋者。
以下,邊參照圖面邊說明有關本案的理想實施形態的基板處理裝置。此基板處理裝置是構成為實施作為半導體裝置(semiconductor device)的IC(Integrated Circuit)的製造方法的基板處理工程的成膜工程之半導體製造裝置,作為一例。
如圖1所示般,基板處理裝置所具備的處理爐202是具備作為加熱手段(加熱機構)的加熱器207。加熱器207是圓筒形狀,藉由作為保持板的加熱器基底(未圖示)來垂直地安裝。在加熱器207的內側是與加熱器207同心圓狀地設有構成反應容器(處理容器)的反應管203。
在反應管203的下方是設有可氣密地閉塞反應管203的下端開口的作為爐口蓋體的密封蓋219。密封蓋219是從垂直方向下側抵接於反應管203的下端。在密封蓋219的上面是設有與反應管203的下端抵接的作為密封構件的O型環220。在密封蓋219的與處理室201相反側是設有使作為基板支撐具的晶舟217旋轉的旋轉機構267。
旋轉機構267的旋轉軸255是被構成為貫通密封蓋,連接至晶舟217,藉由使晶舟217旋轉來使作為基板的晶圓200旋轉。密封蓋219是被構成為藉由被設在反應管203的外部的作為昇降機構的晶舟昇降機115來昇降於垂直方向,藉此可對於處理室201內搬入搬出晶舟217。
在密封蓋219是隔著作為隔熱構件的石英蓋218來立設晶舟217。石英蓋218是例如以石英或碳化矽等的耐熱性材料所構成,作為隔熱部機能,且成為保持晶舟的保持體。晶舟217是例如以石英或碳化矽等的耐熱性材料所構成,被構成為使複數片的晶圓200以水平姿勢且彼此中心一致的狀態下排列而多段地支撐於管軸方向。
在處理室201也就是反應管203的下部,噴嘴249a、噴嘴249b會被設成貫通反應管203。噴嘴249a、噴嘴249b是分別連接氣體供給管232a、氣體供給管232b。如此,在反應管203是設有2根的噴嘴249a、249b及2根的氣體供給管232a、232b,被構成為可供給複數的種類的氣體至處理室201內。又,如後述般,氣體供給管232a、氣體供給管232b是分別連接惰性氣體供給管232c、232e等。
氣體供給管232a是從上游方向依序設有:氣化裝置(氣化手段)將液體原料氣化而產生作為原料氣體的氣化氣體的氣化器271a、霧過濾器300、氣體過濾器272a、流量控制器(流量控制部)的質量流控制器(MFC) 241a、及開閉閥的閥243a。藉由開啟閥243a,在氣化器271a內產生的氣化氣體會經由噴嘴249a來供給至處理室201內。
氣體供給管232a是在MFC241a與閥243a之間連接有被連接至後述的氣體排氣管231的通氣管232d。在此通氣管232d是設有開閉閥的閥243d,不將後述的原料氣體供給至處理室201時,是經由閥243d來將原料氣體供給至通氣管232d。
藉由關閉閥243a,開啟閥243d,被構成為可維持繼續氣化器271a的氣化氣體的產生,停止往處理室201內的氣化氣體的供給。為了安定產生氣化氣體,需要預定的時間,但藉由閥243a與閥243d的切換動作,被構成為可極短時間切換往處理室201內的氣化氣體的供給・停止。
而且,氣體供給管232a是在閥243a的下游側連接惰性氣體供給管232c。此惰性氣體供給管232c是從上游方向依序設有流量控制器(流量控制部)的MFC241c及開閉閥的閥243c。在氣體供給管232a、惰性氣體供給管232c、通氣管232d是安裝有加熱器150,防止再液化。
氣體供給管232a的前端部是連接上述的噴嘴249a。噴嘴249a是在反應管203的內壁與晶圓200之間的圓弧狀的空間,而被設成沿著反應管203的內壁的下部至上部,朝向晶圓200的積載方向上方升起。噴嘴249a是被構成為L字型的長的噴嘴。
在噴嘴249a的側面是設有供給氣體的氣體供給孔250a。如圖2所示般,氣體供給孔250a是開口成朝向反應管203的中心。此氣體供給孔250a是從反應管203的下部到上部設置複數個,分別具有相同的開口面積,更以相同的開口間距設置。
主要藉由氣體供給管232a、通氣管232d、閥243a、243d、MFC241a、氣化器271a、霧過濾器300、氣體過濾器272a、噴嘴249a來構成第1處理氣體供給系。至少藉由噴嘴249a來構成第1氣體供給部。又,主要藉由惰性氣體供給管232c、MFC241c、閥243c來構成第1惰性氣體供給系。
氣體供給管232b是從上游方向依序設有:產生臭氧(O3 )氣體的裝置之臭氧產生器500、閥243f、流量控制器(流量控制部)的MFC241b及開閉閥的閥243b。氣體供給管232b的上游側是被連接至供給氧(O2 )氣體的未圖示的氧氣體供給源。
被供給至臭氧產生器500的O2 氣體是被構成為在臭氧產生器500成為O3 氣體,被供給至處理室201內。氣體供給管232b是在臭氧產生器500與閥243f之間連接有被連接至後述的氣體排氣管231的通氣管232g。在此通氣管232g是設有開閉閥的閥243g,不將後述的O3 氣體供給至處理室201時,是經由閥243g來將原料氣體供給至通氣管232g。藉由關閉閥243f,開啟閥243g,被構成為可維持繼續臭氧產生器500之O3 氣體的產生,停止往處理室201內的O3 氣體的供給。
為了安定精製O3 氣體,需要預定的時間,但藉由閥243f、閥243g的切換動作,被構成為可極短時間切換往處理室201內的O3 氣體的供給或停止。而且,氣體供給管232b是在閥243b的下游側連接惰性氣體供給管232e。此惰性氣體供給管232e是從上游方向依序設有流量控制器(流量控制部)的MFC241e及開閉閥的閥243e。
氣體供給管232b的前端部是連接上述的噴嘴249b。噴嘴249b是在反應管203的內壁與晶圓200之間的圓弧狀的空間,沿著反應管203的內壁的下部到上部,而被設成朝向晶圓200的積載方向上方升起。噴嘴249b是被構成為L字型的長的噴嘴。
在噴嘴249b的側面是設有供給氣體的氣體供給孔250b。如圖2所示般,氣體供給孔250b是開口成朝向反應管203的中心。此氣體供給孔250b是從反應管203的下部到上部設置複數個,分別具有相同的開口面積,更以同開口間距而設。
主要藉由氣體供給管232b、通氣管232g、臭氧產生器500、閥243f、243g、243b、MFC241b、噴嘴249b來構成第2處理氣體供給系。至少藉由噴嘴249b來構成第2氣體供給部。又,主要藉由惰性氣體供給管232e、MFC241e、閥243e來構成第2惰性氣體供給系。
從氣體供給管232a是例如作為含金屬氣體的鋯原料氣體亦即含鋯(Zr)原子的氣體(含鋯氣體)會作為第1原料氣體,經由氣化器271a、霧過濾器300、氣體過濾器272a、MFC241a、閥243a、噴嘴249a來朝處理室201內供給。含鋯氣體是例如可使用四(乙甲胺基)鋯(TEMAZ)。四(乙甲胺基)鋯(TEMAZ)是在常溫常壓下為液體。
氣體供給管232b是供給含氧(O)原子的氣體(含氧氣體)例如O2 氣體,在臭氧產生器500成為O3 氣體(含氧氣體),作為氧化氣體(氧化劑),經由閥243f、MFC241b、閥243b來朝處理室201內供給。又,亦可不在臭氧產生器500產生O3 氣體,供給O2 氣體作為氧化氣體至處理室201內。
從惰性氣體供給管232c、232e是例如氮(N2 )氣體會分別經由MFC241c、241e、閥243c、243e、氣體供給管232a、232b、噴嘴249a、249b來供給至處理室201。
反應管203是設有將處理室201的氣氛排氣的排氣管231。排氣管231是被構成為經由作為檢測出處理室201的壓力的壓力檢測器(壓力檢測部)的壓力感測器245及作為壓力調整器(壓力調整部)的APC(Auto Pressure Controller)閥244來連接真空排氣裝置246,以處理室201內的壓力能成為預定的壓力(真空度)之方式真空排氣。
另外,APC閥244是可開閉閥來進行處理室201的真空排氣・真空排氣停止,更可調節閥開度來調整壓力之開閉閥。主要藉由氣體排氣管231、APC閥244、真空排氣裝置246、壓力感測器245來構成排氣系。
真空排氣裝置246是從處理室201側依照作為輔助泵的機械升壓泵(MBP)9、捕集成膜原料或副生成物的捕捉機構10、作為泵的乾式真空泵(DP)11的順序連接而構成。乾式真空泵11是連接除去裝置12。由於乾式真空泵11是將大氣壓縮,所以產生壓縮熱。因此,有有機金屬原料反應而生成物附著的可能性。對於此,機械升壓泵9相較於乾式真空泵11,由於在處理室201附近接近真空之處動作,因此不易產生壓縮熱,所以有機金屬原料是不反應而通過。因此,在機械升壓泵9與乾式真空泵11之間設置捕捉機構10為理想。另外,亦可在捕捉機構10與乾式真空泵11之間設置機械升壓泵9。至少,藉由氣體排氣管231、機械升壓泵9、捕捉部100、乾式真空泵11來構成排氣部(排氣裝置)。
如圖3所示般,捕捉部100是以捕集含在排氣氣體中的含金屬氣體的捕捉機構10、產生電漿的電漿產生部16、供給含氧氣體至電漿產生部16的氣體供給管(氣體供給部)17、供給高頻電力至前述電漿產生部16的高頻電源18、及供給在電漿產生部16活化的活性種至捕捉機構10的氣體供給管(氣體供給部)21所構成。捕捉機構10是使用氧電漿方式,在流動成膜原料的期間,以自由基氧化來使成膜原料或副生成物附著於捕捉鰭14而捕集。在此,捕捉鰭14的材質是不鏽鋼例如SUS316為理想。
一旦作為含金屬氣體的TEMAZ氣體被供給至處理室201內,則從作為第3氣體供給部的氣體供給管17供給氧(O2 )氣體(亦可為H2 O、O3 )作為第2含氧氣體至電漿產生部16。若從高頻電源18施加高頻電力(例如將27.12MHz的高頻電力設為0.5KW以上3.5KW以下的範圍內的電力),則在被連接至高頻電源18的電極19與被連接至基準電位的地線被接地的電極20之間產生電漿,產生被激發(活化)成電漿狀態的氧氣體(電漿化而被活化,活性種(O2 *))。產生此電漿的手段是電容耦合電漿(Capacitively Cpupled Plasma,簡稱:CCP)。
從處理室201內排氣的包含未反應或貢獻於形成含鋯層之後的TEMAZ氣體(TEMAZ氣體成分)的排氣氣體會從捕捉機構10的In供給至捕捉機構10內。若經由氣體供給管21來將在電漿產生部16被活化的活性種供給至捕捉機構10內,則活性種(O2 *)會與TEMAZ氣體成分反應,生成物會附著於捕捉鰭14,藉此從排氣氣體除去未反應或貢獻於形成含鋯層之後的TEMAZ氣體成分。未反應或貢獻於形成含鋯層之後的TEMAZ氣體成分被除去的排氣氣體會從捕捉機構10的Out排出至乾式真空泵11。藉此,可防止在乾式真空泵11內的生成物的堆積。
作為產生電漿的手段是使用怎樣的方法也可以,例如可使用感應耦合電漿(Inductively Coupled Plasma:簡稱:IPC)、電子迴旋共振電漿(Electron Cyclotron Resonance Plasma、簡稱:ECR電漿)、螺旋波激發電漿(Helicon Wave Excited Plasma、簡稱:HWP)、表面波電漿(Surface Wave Plasma、簡稱:SWP)等。
在成膜工程使用的第1含氧氣體及在捕捉部100使用的第2含氧氣體是可為相同的氣體或亦可為不同的氣體。相同的氣體時,在成膜工程是需要多量的O3 ,難以確保在捕捉部100使用的量。於是,藉由在電漿使用O2 作為不同的氣體,可使O3 的消費減少。只要可確保在成膜工程使用的量及在捕捉部使用的量,使用O3 作為相同氣體時,由於可共通使用臭氧產生器,因此可使裝置構成簡略化。
排氣氣體的溫度是無須特別加以溫度控制,但亦可加熱排氣配管,而加熱排氣氣體。藉此,有機金屬原料及氧電漿會更容易反應。
在反應管203內是設有作為溫度檢測器的溫度感測器263,被構成為根據藉由溫度感測器263所檢測出的溫度資訊,調整往加熱器207的通電情況,使處理室201內的溫度成為所望的溫度分佈。溫度感測器263是與噴嘴249a、249b同樣地被構成為L字型,沿著反應管203的內壁而設。
控制部(控制手段)的控制器121是如圖4所示般,被構成為具備CPU(Central Processing Unit)121a、RAM(RandomAccess Memory)121b、記憶裝置121c、I/O埠121d的電腦。RAM121b、記憶裝置121c、I/O埠121d是被構成為可經由內部匯流排來與CPU121a交換資料。控制器121是連接例如被構成為觸控面板等的輸出入裝置122。又,控制器121是可連接記憶後述的程式的外部記憶裝置(記憶媒體)123。
記憶裝置121c是例如以快閃記憶體、HDD (Hard Disk Drive)等所構成。在記憶裝置121c內是可讀取地儲存有控制基板處理裝置的動作的控制程式、或記載有後述的基板處理的程序或條件等的製程處方等。又,亦可使控制程式或製程處方等記憶於外部記憶裝置123,將該外部記憶裝置123連接至控制器121,藉此使控制程式或製程處方等儲存於記憶裝置121c。
另外,製程處方是被組合成使後述的基板處理工程的各程序實行於控制器121,可取得預定的結果者,作為程式機能。以下,亦將此製程處方或控制程式等總簡稱為程式。
在本說明書中稱程式時,有只包含製程處方單體時,只包含控制程式單體時,或包含該等的雙方的情況。又,RAM121b是被構成為暫時性地保持藉由CPU121a所讀出的程式或資料等的記憶區域(工作區域)。
I/O埠121d是被連接至MFC241a、241b、241c、241e、閥243a、243b、243c、243d、243e、243f、243g、氣化器271a、霧過濾器300、臭氧產生器500、壓力感測器245、APC閥244、機械升壓泵9、乾式真空泵11、高頻電源18、加熱器150、207、溫度感測器263、晶舟旋轉機構267、晶舟昇降機115等。
CPU121a是被構成為從記憶裝置121c讀出控制程式而實行,且按照來自輸出入裝置122的操作指令的輸入等,從記憶裝置121c讀出製程處方。
CPU121a是按照讀出的製程處方,進行MFC241a、241b、241c、241e之各種氣體的流量調整動作、閥243a、243b、243c、243d、243e、243f、243g的開閉動作、根據APC閥244的開閉及壓力感測器245之壓力調整動作、加熱器150的溫度調整動作、根據溫度感測器263之加熱器207的溫度調整動作、氣化器271a、霧過濾器300、臭氧產生器500的控制、機械升壓泵9、乾式真空泵11、高頻電源18的起動・停止、晶舟旋轉機構267的旋轉速度調節動作、晶舟昇降機115的昇降動作等的控制等。
(2)基板處理工程 其次,參照圖5、圖6說明有關使用上述的基板處理裝置的處理爐,作為半導體裝置(semiconductor device)的製造工程之一工程,在基板上形成絕緣膜的順序例。另外,在以下的說明中,構成基板處理裝置的各部的動作是藉由控制器121來控制。
成膜方法,例如有同時供給包含構成所形成的膜的複數的元素的複數種類的氣體之方法、交替供給包含構成所形成的膜的複數的元素的複數種類的氣體之方法。
首先,一旦複數片的晶圓200被裝填至晶舟217(晶圓裝填)(參照圖5、步驟S101),則支撐複數片的晶圓200的晶舟217是藉由晶舟昇降機115來舉起而搬入至處理室201(晶舟裝載)(參照圖5、步驟S102)。在此狀態下,密封蓋219是成為隔著O型環220來密封反應管203的下端的狀態。
藉由真空排氣裝置246來真空排氣,使處理室201成為所望的壓力(真空度)。此時,處理室201內的壓力是以壓力感測器245來測定,根據此被測定的壓力,APC閥244會被反饋控制(壓力調整)(參照圖5、步驟S103)。
藉由加熱器207來加熱,使處理室201成為所望的溫度。此時,根據溫度感測器263所檢測出的溫度資訊,反饋控制往加熱器207的通電情況,使處理室201成為所望的溫度分佈(溫度調整)(參照圖5、步驟S103)。接著,藉由旋轉機構267,晶舟217會被旋轉,藉此晶圓200會被旋轉。
其次,進行藉由供給TEMAZ氣體及O3 氣體至處理室201來將絕緣膜的鋯氧化膜(ZrO膜)成膜的絕緣膜形成工程(參照圖5、步驟S104)。在絕緣膜形成工程是依序實行其次的4個的步驟。
(絕緣膜形成工程) <步驟S105> 在步驟S105(參照圖5、圖6)中,首先使TEMAZ氣體流動。開啟氣體供給管232a的閥243a,關閉通氣管232d的閥243d,藉此經由氣化器271a、霧過濾器300及氣體過濾器272a來使TEMAZ氣體流動於氣體供給管232a內。流動於氣體供給管232a內的TEMAZ氣體是藉由MFC241a來調整流量。被調整流量的TEMAZ氣體是一面從噴嘴249a的氣體供給孔250a供給至處理室201,一面從氣體排氣管231排氣。此時,同時開啟閥243c,使N2 氣體等的惰性氣體流動於惰性氣體供給管232c內。流動於惰性氣體供給管232c內的N2 氣體是藉由MFC241c來調整流量。被調整流量的N2 氣體是一面與TEMAZ氣體一起供給至處理室201,一面從氣體排氣管231排氣。藉由將TEMAZ氣體供給至處理室201,與晶圓200反應,在晶圓200上形成含鋯層。
此時,適當地調整APC閥244,將處理室201的壓力設為例如50~400Pa的範圍內的壓力。以MFC241a來控制的TEMAZ氣體的供給流量是設為例如0.1~0.5g/分的範圍內的流量。將晶圓200暴露於TEMAZ氣體的時間,亦即氣體供給時間(照射時間)是設為例如30~240秒間的範圍內的時間。此時加熱器207的溫度是設定成晶圓200的溫度會成為例如150~250℃的範圍內的溫度。
<步驟S106> 在步驟S106(參照圖5、圖6)中,形成含鋯層之後,關閉閥243a,開啟閥243d,停止往處理室201的TEMAZ氣體的供給,使TEMAZ氣體流至通氣管232d。此時,氣體排氣管231的APC閥244是維持開啟,藉由真空排氣裝置246來將處理室201真空排氣,從處理室201排除殘留於處理室201的未反應或貢獻於形成含鋯層之後的TEMAZ氣體。另外,此時閥243c是維持開啟,維持N2 氣體的往處理室201的供給。藉此,可提高從處理室201排除殘留於處理室201的未反應或貢獻於形成含鋯層之後的TEMAZ氣體的效果。惰性氣體是除了N2 氣體以外,亦可使用Ar氣體、He氣體、Ne氣體、Xe氣體等的稀有氣體。並且,從處理室201內排氣的包含TEMAZ氣體(TEMAZ氣體成分)的排氣氣體是被供給至捕捉機構內10。被供給至捕捉機構10內的TEMAZ氣體成分與活性種(O2 *)會反應,生成物會附著於捕捉鰭14,藉此從排氣氣體除去未反應或貢獻於形成含鋯層之後的TEMAZ氣體成分。
<步驟S107> 在步驟S107(參照圖5、圖6)中,除去處理室201的殘留氣體之後,使O2 氣體流動於氣體供給管232b內。流動於氣體供給管232b內的O2 氣體是藉由臭氧產生器500來成為O3 氣體。開啟氣體供給管232b的閥243f及閥243b,關閉通氣管232g的閥243g,藉此流動於氣體供給管232b內的O3 氣體是藉由MFC241b來調整流量,一面從噴嘴249b的氣體供給孔250b供給至處理室201,一面從氣體排氣管231排氣。此時同時開啟閥243e,使N2 氣體流動於惰性氣體供給管232e內。N2 氣體是一面與O3 氣體一起供給至處理室201,一面從氣體排氣管231排氣。藉由將O3 氣體供給至處理室201,被形成於晶圓200上的含鋯層與O3 氣體會反應而形成ZrO層。
使O3 氣體流動時,適當地調整APC閥244,將處理室201的壓力設為例如50~400Pa的範圍內的壓力。以MFC241b來控制的O3 氣體的供給流量是設為例如10~20slm的範圍內的流量。將晶圓200暴露於O3 氣體的時間,亦即氣體供給時間(照射時間)是設為例如60~300秒的範圍內的時間。此時的加熱器207的溫度是與步驟105同樣,設定成晶圓200的溫度會成為150~250℃的範圍內的溫度。
<步驟S108> 在步驟S108(參照圖5、圖6)中,關閉氣體供給管232b的閥243b,開啟閥243g,停止往處理室201的O3 氣體的供給,使O3 氣體流至通氣管232g。此時,氣體排氣管231的APC閥244是維持開啟,藉由真空排氣裝置246來將處理室201真空排氣,從處理室201排除殘留於處理室201的未反應或貢獻於氧化之後的O3 氣體。另外,此時閥243e是維持開啟,維持N2 氣體的往處理室201的供給。藉此,可提高從處理室201排除殘留於處理室201的未反應或貢獻於氧化之後的O3 氣體的效果。含氧氣體是除了O3 氣體以外,亦可使用O2 氣體等。
以上述的步驟S105~S108作為1循環,將此循環至少進行1次以上(步驟S109),藉此可在晶圓200上形成預定膜厚的ZrO膜。另外,上述的循環是重複複數次為理想。藉此,在晶圓200上形成所望的ZrO膜。
形成ZrO膜後,關閉氣體供給管232a的閥243a,關閉氣體供給管232b的閥243b,開啟惰性氣體供給管232c的243c,開啟惰性氣體供給管232e的243e,使N2 氣體流至處理室201。N2 氣體是作為淨化氣體作用,藉此,處理室201會以惰性氣體淨化,殘留於處理室201的氣體會從處理室201除去(淨化,步驟S110)。然後,處理室201的氣氛會被置換成惰性氣體,處理室201的壓力會被恢復成常壓(大氣壓恢復,步驟S111)。
然後,密封蓋219會藉由晶舟昇降機115來下降,集流腔209的下端會被開口,且處理完了的晶圓200會在被保持於晶舟217的狀態下從集流腔209的下端搬出至反應管203的外部(晶舟卸載,步驟S112)。然後,處理完了的晶圓200從晶舟217取出(晶圓卸裝,步驟S113)。
又,本案是例如亦可變更既存的基板處理裝置的製程處方來實現。變更製程處方時,亦可經由電氣通訊線路或記錄了該製程處方的記錄媒體來將本案的製程處方安裝於既存的基板處理裝置,或操作既存的基板處理裝置的輸出入裝置來將其製程處方本身變更成本案的製程處方。
例如,上述的實施形態是說明有關使用TEMAZ氣體作為含Zr氣體的情況,但含Zr氣體是不被限於此,例如可使用Zr(O-tBu)4 氣體、TDMAZ(肆(二甲基胺基)鋯:Zr(NMe2 )4 )氣體、TDEAZ(肆(二乙基胺基)鋯:Zr(NETt2)4)氣體、Zr(MMP)4 氣體等。原料氣體是例如亦可使用三甲基鋁(Al(CH3 )3 ,簡稱:TMA)氣體等的含金屬元素及碳的有機金屬原料氣體。反應氣體是可使用與上述的實施形態同樣的氣體。
又,上述的實施形態是說明有關使膜堆積於晶圓200上的例子。但,本案是不被限定於如此的形態。例如,對於在晶圓200上所形成的膜等,進行氧化處理、擴散處理、退火處理、蝕刻處理等的處理時也可適當地適用。
又,不限於像本實施形態的基板處理裝置那樣的處理半導體晶圓的半導體製造裝置等,亦可適用於處理玻璃基板的LCD(Liquid Crystal Display)製造裝置。
本案是至少包含以下的實施形態。
(附記1) 若根據本案之一形態,則提供一種基板處理裝置,具有: 處理基板的處理室; 供給含金屬氣體至前述處理室內的第1氣體供給部;及 將含有含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部, 前述排氣部,係具備: 氣體排氣管; 將前述處理室內排氣的泵(乾式真空泵); 輔助該泵的輔助泵(機械升壓泵);及 被設在前述泵與前述輔助泵之間,用以藉由電漿來捕集在排氣氣體中所含的前述含金屬氣體成分之捕捉部。
(附記2) 理想是提供如附記1記載的基板處理裝置,其中, 前述捕捉部,係具備: 捕集藉由前述排氣氣體所含的前述含金屬氣體成分之捕捉機構; 產生前述電漿的電漿產生部; 供給含氧氣體至前述電漿產生部的第2氣體供給部; 供給高頻電力至前述電漿產生部的高頻電源;及 將來自電漿產生部的氣體供給至捕捉機構的第3氣體供給部, 前述電漿產生部,係將前述含氧氣體電漿化而活化,經由第3氣體供給部來供給至前述捕捉機構。
(附記3) 理想是提供如附記2記載的基板處理裝置,其中,在前述捕捉機構內,使前述含金屬氣體成分與在前述電漿產生部被活化的第2含氧氣體反應。
(附記4) 理想是提供如附記1記載的基板處理裝置,其中,具備供給第2含氧氣體至前述處理室內的第4氣體供給部,前述含氧氣體與前述第2含氧氣體為相同的氣體。
(附記5) 理想是提供如附記1記載的基板處理裝置,其中,具備供給第2含氧氣體至前述處理室內的第4氣體供給部,前述含氧氣體與前述第2含氧氣體為不同的氣體。
(附記6) 理想是提供如附記5記載的基板處理裝置,其中,前述含氧氣體為氧,前述第2含氧氣體為臭氧。
(附記7) 理想是提供如附記3記載的基板處理裝置,其中,前述捕捉機構,係具有捕捉鰭,使前述含金屬氣體成分與在前述電漿產生部被活化的含氧氣體反應而生成的生成物附著於前述捕捉鰭。
(附記8) 理想是提供如附記1記載的基板處理裝置,其中,交替進行: (a)從前述第1氣體供給部供給含金屬氣體至前述處理室內的處理;及 (b)從前述第2氣體供給部供給含氧氣體至前述處理室內的處理, 進行: (c)在(a)之後,將含有前述含金屬氣體成分的排氣氣體予以排氣的處理;及 (d)捕集在前述排氣氣體中所含的前述含金屬氣體成分的處理。
(附記9) 提供一種排氣裝置,係具備: 氣體排氣管; 將處理室內排氣的泵; 輔助該泵的輔助泵;及 捕捉部,在前述泵與前述輔助泵之間,用以藉由利用電漿而被活化的含氧氣體來捕集在排氣氣體中所含的含金屬氣體成分。
(附記10) 理想是提供如附記9記載的排氣裝置,其中, 前述捕捉部,係具備: 捕集藉由前述排氣氣體所含的前述含金屬氣體成分之捕捉機構; 產生前述電漿的電漿產生部; 供給含氧氣體至前述電漿產生部的第1氣體供給部; 供給高頻電力至前述電漿產生部的高頻電源;及 將來自電漿產生部的氣體供給至捕捉機構的第2氣體供給部, 前述電漿產生部,係將前述含氧氣體電漿化而活化,經由第2氣體供給部來供給至前述捕捉機構。
(附記11) 理想是提供如附記10記載的排氣裝置,其中,在前述捕捉機構內,使前述含金屬氣體成分與在前述電漿產生部被活化的含氧氣體反應。
(附記12) 理想是提供如附記9記載的排氣裝置,其中,前述含氧氣體為氧。
(附記13) 理想是提供如附記9記載的排氣裝置,其中,前述捕捉機構,係具有捕捉鰭,使令前述含金屬氣體成分與前述被電漿化的含氧氣體反應而生成的生成物附著於前述捕捉鰭。
(附記14) 提供一種半導體裝置的製造方法,具有: 在基板處理裝置的處理室收容基板的工程,該基板處理裝置係具有:處理前述基板的前述處理室、供給含金屬氣體至前述處理室內的第1氣體供給部、及將含有含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部,前述排氣部係具備:氣體排氣管、將前述處理室內排氣的泵、輔助該泵的輔助泵、及被設在前述泵與前述輔助泵之間,用以藉由電漿來捕集前述含金屬氣體成分的捕捉部; 供給前述含金屬氣體至前述處理室內的工程; 將前述含金屬氣體成分予以從前述處理室排氣的工程;及 藉由前述捕捉部來捕集前述含金屬氣體成分的工程。
(附記15) 提供一種藉由電腦來使下列程序實行於前述基板處理裝置的程式, 在基板處理裝置的處理室收容基板的程序,該基板處理裝置係具有:處理前述基板的前述處理室、供給含金屬氣體至前述處理室內的第1氣體供給部、及將含有含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部,前述排氣部係具備:氣體排氣管、將前述處理室內排氣的泵、輔助該泵的輔助泵、及被設在前述泵與前述輔助泵之間,用以藉由電漿來捕集前述含金屬氣體成分的捕捉部; 供給前述含金屬氣體至前述處理室內的程序; 將前述含金屬氣體成分予以從前述處理室排氣的程序;及 藉由前述捕捉部來捕集前述含金屬氣體成分的程序。
9:機械升壓泵(輔助泵) 10:捕捉機構 11:乾式真空泵(泵) 100:捕捉部 200:晶圓(基板) 201:處理室 231:氣體排氣管
[圖1]是用以說明在本案的實施形態所適用的基板處理裝置的概略縱剖面圖。 [圖2]是圖1的A-A線的垂直剖面圖。 [圖3]是用以說明在本案的實施形態所適用的捕捉的概略縱剖面圖。 [圖4]是表示在本案的實施形態所適用的控制器構成的圖。 [圖5]是用以說明使用本案的理想實施形態的基板處理裝置來製造鋯氧化膜的製程的流程圖。 [圖6]是用以說明使用本案的理想實施形態的基板處理裝置來製造鋯氧化膜的製程的時間圖。
9:機械升壓泵(輔助泵)
11:乾式真空泵(泵)
12:除去裝置
100:捕捉部
115:晶舟昇降機
121:控制器
150:加熱器
200:晶圓(基板)
201:處理室
202:處理爐
203:反應管
207:加熱器
217:晶舟
218:石英蓋
219:密封蓋
220:O型環
231:氣體排氣管
232a,232b:氣體供給管
232c,232e:惰性氣體供給管
232d,232g:通氣管
241a,241b,241c,241e:質量流控制器(MFC)
243b,243c,243d,243e,243f,243g:閥
244:APC閥
245:壓力感測器
246:真空排氣裝置
249a,249b:噴嘴
250a,250b:氣體供給孔
255:旋轉軸
267:旋轉機構
271a:氣化器
272a:氣體過濾器
300:霧過濾器
500:臭氧產生器

Claims (16)

  1. 一種基板處理裝置,其特徵係具有:處理基板的處理室;供給含金屬氣體至前述處理室內的第1氣體供給部;供給第1含氧氣體至前述處理室內的第2氣體供給部;及設有氣體排氣管及用以藉由電漿來捕集在排氣氣體中所含的前述含金屬氣體成分的捕捉部,將含有前述含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部,前述捕捉部,係具備:產生前述電漿的電漿產生部;供給第2含氧氣體至前述電漿產生部的第3氣體供給部;供給高頻電力至前述電漿產生部的高頻電源;及使在前述排氣氣體中所含的前述含金屬氣體成分附著而捕集的捕捉機構。
  2. 如請求項1記載的基板處理裝置,其中,前述捕捉部,係具備將來自前述電漿產生部的被活化的氣體供給至前述捕捉機構的第4氣體供給部,前述電漿產生部,係藉由電漿來將前述第2含氧氣體活化,經由前述第4氣體供給部來供給至前述捕捉機構。
  3. 如請求項2記載的基板處理裝置,其中,在前述捕捉機構內,使前述含金屬氣體成分與在前述電漿產生部被活化的前述第2含氧氣體反應。
  4. 如請求項1記載的基板處理裝置,其中,前述第1含氧氣體與前述第2含氧氣體為相同的氣體。
  5. 如請求項1記載的基板處理裝置,其中,前述第1含氧氣體與前述第2含氧氣體為不同的氣體。
  6. 如請求項5記載的基板處理裝置,其中,前述第1含氧氣體為氧,前述第2含氧氣體為臭氧。
  7. 一種基板處理裝置,其特徵係具有:處理基板的處理室;供給含金屬氣體至前述處理室內的第1氣體供給部;氣體排氣管;及被設在泵與輔助泵之間,用以藉由電漿來捕集在排氣氣體中所含的含金屬氣體成分的捕捉部,前述捕捉部,係具有產生前述電漿的電漿產生部及捕捉鰭,使前述含金屬氣體成分與在前述電漿產生部被活化的含氧氣體反應而生成的生成物附著於前述捕捉鰭。
  8. 一種基板處理裝置,其特徵係具有:處理基板的處理室;供給含金屬氣體至前述處理室內的第1氣體供給部;供給第1含氧氣體至前述處理室內的第2氣體供給部;氣體排氣管;及被設在泵與輔助泵之間,用以藉由電漿來捕集在排氣氣體中所含的含金屬氣體成分的捕捉部,交替進行:(a)從前述第1氣體供給部供給含金屬氣體至前述處理 室內的處理;及(b)從前述第2氣體供給部供給含氧氣體至前述處理室內的處理,進行:(c)在(a)之後,將含有前述含金屬氣體成分的排氣氣體予以排氣的處理;及(d)捕集在前述排氣氣體中所含的前述含金屬氣體成分的處理。
  9. 一種排氣裝置,係具備:氣體排氣管;及捕捉部,其係用以藉由利用電漿而被活化的含氧氣體來捕集在排氣氣體中所含的含金屬氣體成分,其特徵為:前述捕捉部,係具備:產生前述電漿的電漿產生部;供給含氧氣體至前述電漿產生部的含氧氣體供給部;供給高頻電力至前述電漿產生部的高頻電源;及捕集在前述排氣氣體中所含的前述含金屬氣體成分的捕捉機構。
  10. 如請求項9記載的排氣裝置,其中,具備將來自前述電漿產生部的被活化的氣體供給至捕捉機構的活化氣體供給部,前述電漿產生部,係藉由電漿來將前述含氧氣體活化,經由前述活化氣體供給部來供給至前述捕捉機構。
  11. 如請求項10記載的排氣裝置,其中,在前述捕捉機構內,使前述含金屬氣體成分與在前述電漿產生部被活化的前述含氧氣體反應。
  12. 如請求項9記載的排氣裝置,其中,前述含氧氣體為氧。
  13. 一種排氣裝置,其特徵係具備:氣體排氣管;及捕捉部,其係在泵與輔助泵之間,用以藉由利用電漿而被活化的含氧氣體來捕集在排氣氣體中所含的含金屬氣體成分,前述捕捉部,係具有產生前述電漿的電漿產生部及捕捉鰭,使令前述含金屬氣體成分與前述被電漿化的含氧氣體反應而生成的生成物附著於前述捕捉鰭。
  14. 一種半導體裝置的製造方法,其特徵係具有:在基板處理裝置的處理室收容基板的工程,該基板處理裝置係具有:處理前述基板的前述處理室、供給含金屬氣體至前述處理室內的第1氣體供給部、供給第1含氧氣體至前述處理室內的第2氣體供給部、及設有氣體排氣管和用以藉由電漿來捕集在排氣氣體中所含的含金屬氣體成分的捕捉部將含有含金屬氣體成分的排氣氣體予以從前述處理室內排氣的排氣部,前述捕捉部係具備:產生前述電漿的電漿產生部、供給第2含氧氣體至前述電漿產生部的第3氣體供給部、供給高頻電力至前述電漿產生部的高頻電 源、及捕集在前述排氣氣體中所含的前述含金屬氣體成分的捕捉機構;供給前述含金屬氣體至前述處理室內的工程;將前述含金屬氣體成分予以從前述處理室排氣的工程;及藉由前述捕捉部來捕集前述含金屬氣體成分的工程。
  15. 一種半導體裝置的製造方法,其特徵係具有:在基板處理裝置的處理室收容基板的工程,該基板處理裝置係具有:處理基板的處理室、供給含金屬氣體至前述處理室內的第1氣體供給部、氣體排氣管、及被設在泵與輔助泵之間用以藉由電漿來捕集在排氣氣體中所含的含金屬氣體成分的捕捉部,前述捕捉部係具有產生前述電漿的電漿產生部及捕捉鰭,使前述含金屬氣體成分與在前述電漿產生部被活化的含氧氣體反應而生成的生成物附著於前述捕捉鰭;供給前述含金屬氣體至前述處理室內的工程;將前述含金屬氣體成分予以從前述處理室排氣的工程;及藉由前述捕捉部來捕集前述含金屬氣體成分的工程。
  16. 一種半導體裝置的製造方法,該半導體裝置係具備:處理基板的處理室;供給含金屬氣體至前述處理室內的第1氣體供給部; 供給第1含氧氣體至前述處理室內的第2氣體供給部;氣體排氣管;及被設在泵與輔助泵之間,用以藉由電漿來捕集在排氣氣體中所含的含金屬氣體成分的捕捉部,其特徵為交替進行:(a)從前述第1氣體供給部供給含金屬氣體至前述處理室內的處理;及(b)從前述第2氣體供給部供給含氧氣體至前述處理室內的處理,進行:(c)在(a)之後,將含有前述含金屬氣體成分的排氣氣體予以排氣的處理;及(d)捕集在前述排氣氣體中所含的前述含金屬氣體成分的處理。
TW110106040A 2020-03-18 2021-02-22 基板處理裝置,排氣裝置及半導體裝置的製造方法 TWI783382B (zh)

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