JP7408772B2 - 基板処理装置、排気装置、半導体装置の製造方法、基板処理方法及びプログラム - Google Patents
基板処理装置、排気装置、半導体装置の製造方法、基板処理方法及びプログラム Download PDFInfo
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- JP7408772B2 JP7408772B2 JP2022508350A JP2022508350A JP7408772B2 JP 7408772 B2 JP7408772 B2 JP 7408772B2 JP 2022508350 A JP2022508350 A JP 2022508350A JP 2022508350 A JP2022508350 A JP 2022508350A JP 7408772 B2 JP7408772 B2 JP 7408772B2
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Description
基板を処理する処理室と、
前記処理室内に金属含有ガスを供給する第1ガス供給部と、
前記処理室内に酸素含有ガスを供給する第2ガス供給部と、
前記処理室内から金属含有ガス成分を含む排気ガスを排気する排気部と、を有し、
前記排気部は、ガス排気管と、前記処理室内を排気するポンプと、該ポンプを補助する補助ポンプと、前記ポンプと前記補助ポンプとの間に設けられ、プラズマにより前記金属含有ガス成分を捕集するためのトラップ部と、
を備える技術が提供される。
以下、実施形態について、図面を用いて説明する。ただし、以下の説明において、同一構成要素には同一符号を付し繰り返しの説明を省略することがある。なお、図面は説明をより明確にするため、実際の態様に比べ、各部の幅、厚さ、形状等について模式的に表される場合があるが、あくまで一例であって、本開示の解釈を限定するものではない。
次に、上述の基板処理装置の処理炉を用いて半導体装置(半導体デバイス)の製造工程の一工程として、基板上に絶縁膜を成膜するシーケンス例について、図5、図6を参照して説明する。なお、以下の説明において、基板処理装置を構成する各部の動作はコントローラ121により制御される。
<ステップS105>
ステップS105(図5、図6参照)では、まず金属含有ガスを流す。ガス供給管232aのバルブ243aを開き、ベントライン232dのバルブ243dを閉じることで、気化器271a、ミストフィルタ300およびガスフィルタ272aを介してガス供給管232a内に金属含有ガスを流す。ガス供給管232a内を流れた金属含有ガスは、MFC241aにより流量調整される。流量調整された金属含有ガスはノズル249aのガス供給孔250aから処理室201に供給されつつガス排気管231から排気される。このとき、同時にバルブ243cを開き、ガス供給管232c内に不活性ガスを流す。ガス供給管232c内を流れた不活性ガスは、MFC241cにより流量調整される。流量調整された不活性ガスは金属含有ガスと一緒に処理室201に供給されつつガス排気管231から排気される。金属含有ガスを処理室201に供給することでウエハ200と反応し、ウエハ200上に金属含有含有層が形成される。
ステップS106(図5、図6参照)では、金属含有層が形成された後、バルブ243aを閉じ、バルブ243dを開けて処理室201への金属含有ガスの供給を停止し、金属含有ガスをベントライン232dへ流す。このとき、ガス排気管231のAPCバルブ244は開いたままとして、真空排気装置246により処理室201を真空排気し、処理室201に残留する未反応もしくは金属含有層形成に寄与した後の金属含有ガスを処理室201から排除する。尚、この時バルブ243cは開いたままとして、不活性ガスの処理室201への供給を維持する。これにより、処理室201に残留する未反応もしくは金属含有層形成に寄与した後の金属含有ガスを処理室201から排除する効果を高める。また、処理室201内から排気された金属含有ガス(金属含有ガス成分)を含む排気ガスは、トラップ機構内10に供給される。トラップ機構10内に供給された金属含有ガス成分と活性種が反応し、トラップフィン14に生成物が付着されることで、排気ガスから未反応もしくは金属含有含有層形成に寄与した後の金属含有ガス成分が除去される。
ステップS107(図5、図6参照)では、処理室201の残留ガスを除去した後、ガス供給管232b内に酸素含有ガスを流す。ガス供給管232b内を流れた、例えば、O2ガスは、オゾナイザ500によりO3ガスとなる。ガス供給管232bのバルブ243f及びバルブ243bを開き、ベントライン232gのバルブ243gを閉めることで、ガス供給管232b内を流れた酸素含有ガス(第2の酸素含有ガス)は、MFC241bにより流量調整され、ノズル249bのガス供給孔250bから処理室201に供給されつつガス排気管231から排気される。この時同時にバルブ243eを開き、不活性ガス供給管232e内に不活性ガスを流す。不活性ガスガスは酸素含有ガスと一緒に処理室201に供給されつつガス排気管231から排気される。酸素含有ガスを処理室201に供給することにより、ウエハ200上に形成された金属含有層と酸素含有ガスが反応して金属酸化層が形成される。
ステップS108(図5、図6参照)では、ガス供給管232bのバルブ243bを閉じ、バルブ243gを開けて処理室201への酸素ガス(第2の酸素含有ガス)の供給を停止し、酸素含有ガスをベントライン232gへ流す。このとき、ガス排気管231のAPCバルブ244は開いたままとして、真空排気装置246により処理室201を真空排気し、処理室201に残留する未反応もしくは酸化に寄与した後の酸素含有ガスを処理室201から排除する。尚、この時バルブ243eは開いたままとして、不活性ガスの処理室201への供給を維持する。これにより、処理室201に残留する未反応もしくは酸化に寄与した後の酸素ガスを処理室201から排除する効果を高める。
また、成膜工程で使用される酸素含有ガス(第1の酸素含有ガス)としては、O2ガス、H2Oガス、O3ガス等を用いることができる。
また、トラップ部100で使用される酸素含有ガス(第2の酸素含有ガス)としては、O2ガス、H2Oガス、O3ガス等を用いることができる。
また、不活性ガスとしては、N2ガスや、Arガス、Heガス、Neガス、Xeガス等の希ガスを用いることができる。
10…トラップ機構
11…ドライポンプ(ポンプ)
100…トラップ部
200…ウエハ(基板)
201…処理室
231…ガス排気管
Claims (19)
- 基板を処理する処理室と、
前記処理室内に金属含有ガスを供給する第1ガス供給部と、
前記処理室内に第1の酸素含有ガスを供給する第2ガス供給部と、
ガス排気管と、プラズマにより排気ガスに含まれる前記金属含有ガス成分を捕集するためのトラップ部と、が設けられ、前記処理室内から前記排気ガスを排気する排気部と、を備え、
前記トラップ部は、前記排気ガスに含まれる前記金属含有ガス成分を捕集するトラップ機構と、前記プラズマを生成するプラズマ生成部と、前記プラズマ生成部に第2の酸素含有ガスを供給する第3ガス供給部と、前記プラズマ生成部からのガスを前記トラップ機構に供給する第4ガス供給部と、を備える基板処理装置。 - 前記トラップ部は、前記処理室内を排気するポンプと、該ポンプを補助する補助ポンプとの間に設けられる請求項1に記載の基板処理装置。
- 前記プラズマ生成部は、前記第2の酸素含有ガスをプラズマにより活性化して前記第4ガス供給部を介して前記トラップ機構に供給する請求項1に記載の基板処理装置。
- 前記プラズマ生成部に高周波電力を供給する高周波電源を備え、
前記プラズマ生成部は、前記高周波電源に接続される電極と、基準電位であるアースに接続され、接地される電極と、を備える請求項1に記載の基板処理装置。 - 前記トラップ機構内で、前記金属含有ガス成分と前記プラズマ生成部で活性化された前記第2の酸素含有ガスとを反応させる請求項1に記載の基板処理装置。
- 前記トラップ機構は、前記金属含有ガス成分を付着させるトラップフィンを有する請求項1に記載の基板処理装置。
- 前記金属含有ガス成分と前記プラズマ生成部で活性化された第2の酸素含有ガスとを反応させて生成された生成物を前記トラップフィンに付着させる請求項6に記載の基板処理装置。
- 前記トラップフィンは、ステンレスである請求項6又は請求項7に記載の基板処理装置。
- 前記ポンプはドライポンプであり、前記補助ポンプはメカニカルブースターポンプである請求項2に記載の基板処理装置。
- 前記第1の酸素含有ガスと前記第2の酸素含有ガスが同一のガスである請求項2に記載の基板処理装置。
- 前記第1の酸素含有ガス及び前記第2の酸素含有ガスがともにオゾンである請求項10に記載の基板処理装置。
- 前記第1の酸素含有ガスと前記第2の酸素含有ガスとが異なるガスである請求項1に記載の基板処理装置。
- 前記第1の酸素含有ガスが酸素であり、前記第2の酸素含有ガスがオゾンである請求項12に記載の基板処理装置。
- 前記オゾンを発生させるオゾナイザを備える請求項11又は請求項13に記載の基板処理装置。
- (a)前記第1ガス供給部から前記処理室内に金属含有ガスを供給する処理と、(b)前記第2ガス供給部から前記処理室内に前記第1の酸素含有ガスを供給する処理と、を交互に行い、(c)(a)の後に、前記金属含有ガス成分を含む排気ガスを排気する処理と、(d)前記排気ガスに含まれる前記金属含有ガス成分を捕集する処理と、を行う請求項1に記載の基板処理装置。
- ガス排気管と、
プラズマを用いて活性化された酸素含有ガスにより排気ガスに含まれる金属含有ガス成分を捕集するためのトラップ部と、が設けられ、処理室内から前記金属含有ガス成分を含む排気ガスを排気する排気部と、を備え、
前記トラップ部は、前記排気ガスに含まれる前記金属含有ガス成分を捕集するトラップ機構と、前記プラズマを生成するプラズマ生成部と、前記プラズマ生成部に第2の酸素含有ガスを供給する第3ガス供給部と、前記プラズマ生成部からのガスを前記トラップ機構に供給する第4ガス供給部と、を備える排気装置。 - 基板を処理する処理室と、前記処理室内に金属含有ガスを供給する第1ガス供給部と、前記処理室内に第1の酸素含有ガスを供給する第2ガス供給部と、ガス排気管と、プラズマにより排気ガスに含まれる前記金属含有ガス成分を捕集するためのトラップ部と、が設けられ、前記処理室内から前記排気ガスを排気する排気部と、を備え、前記トラップ部は、前記排気ガスに含まれる前記金属含有ガス成分を捕集するトラップ機構と、前記プラズマを生成するプラズマ生成部と、前記プラズマ生成部に第2の酸素含有ガスを供給する第3ガス供給部と、前記プラズマ生成部からのガスを前記トラップ機構に供給する第4ガス供給部と、を備える基板処理装置の前記処理室に前記基板を収容する工程と、
前記処理室内に前記金属含有ガスを供給する工程と、
前記処理室から前記金属含有ガス成分を排気する工程と、
前記トラップ部により前記金属含有ガス成分を捕集する工程と、
を有する半導体装置の製造方法。 - 基板を処理する処理室と、前記処理室内に金属含有ガスを供給する第1ガス供給部と、前記処理室内に第1の酸素含有ガスを供給する第2ガス供給部と、ガス排気管と、プラズマにより排気ガスに含まれる前記金属含有ガス成分を捕集するためのトラップ部と、が設けられ、前記処理室内から前記排気ガスを排気する排気部と、を備え、前記トラップ部は、前記排気ガスに含まれる前記金属含有ガス成分を捕集するトラップ機構と、前記プラズマを生成するプラズマ生成部と、前記プラズマ生成部に第2の酸素含有ガスを供給する第3ガス供給部と、前記プラズマ生成部からのガスを前記トラップ機構に供給する第4ガス供給部と、を備える基板処理装置の前記処理室に前記基板を収容する工程と、
前記処理室内に前記金属含有ガスを供給する工程と、
前記処理室から前記金属含有ガス成分を排気する工程と、
前記トラップ部により前記金属含有ガス成分を捕集する工程と、
を有する基板処理方法。 - 基板を処理する処理室と、前記処理室内に金属含有ガスを供給する第1ガス供給部と、前記処理室内に第1の酸素含有ガスを供給する第2ガス供給部と、ガス排気管と、プラズマにより排気ガスに含まれる前記金属含有ガス成分を捕集するためのトラップ部と、が設けられ、前記処理室内から前記排気ガスを排気する排気部と、を備え、前記トラップ部は、前記排気ガスに含まれる前記金属含有ガス成分を捕集するトラップ機構と、前記プラズマを生成するプラズマ生成部と、前記プラズマ生成部に第2の酸素含有ガスを供給する第3ガス供給部と、前記プラズマ生成部からのガスを前記トラップ機構に供給する第4ガス供給部と、を備える基板処理装置の前記処理室に前記基板を収容する手順と、
前記処理室内に前記金属含有ガスを供給する手順と、
前記処理室から前記金属含有ガス成分を排気する手順と、
前記トラップ部により前記金属含有ガス成分を捕集する手順と、
をコンピュータにより前記基板処理装置に実行させるプログラム。
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PCT/JP2021/010402 WO2021187425A1 (ja) | 2020-03-18 | 2021-03-15 | 基板処理装置、排気装置、半導体装置の製造方法及びプログラム |
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JPWO2021187425A1 JPWO2021187425A1 (ja) | 2021-09-23 |
JPWO2021187425A5 JPWO2021187425A5 (ja) | 2022-09-26 |
JP7408772B2 true JP7408772B2 (ja) | 2024-01-05 |
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JP2005109383A (ja) | 2003-10-02 | 2005-04-21 | Renesas Technology Corp | 半導体製造装置用排気配管および半導体製造装置 |
JP2008270508A (ja) | 2007-04-20 | 2008-11-06 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
JP2013084561A (ja) | 2011-10-10 | 2013-05-09 | Korea Inst Of Machinery & Materials | 汚染物質除去用プラズマ反応器 |
JP2019505096A (ja) | 2016-01-26 | 2019-02-21 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置 |
JP2020033619A (ja) | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | 排気配管装置及びクリーニング装置 |
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JP2005109383A (ja) | 2003-10-02 | 2005-04-21 | Renesas Technology Corp | 半導体製造装置用排気配管および半導体製造装置 |
JP2008270508A (ja) | 2007-04-20 | 2008-11-06 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
JP2013084561A (ja) | 2011-10-10 | 2013-05-09 | Korea Inst Of Machinery & Materials | 汚染物質除去用プラズマ反応器 |
JP2019505096A (ja) | 2016-01-26 | 2019-02-21 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置 |
JP2020033619A (ja) | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | 排気配管装置及びクリーニング装置 |
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