CN115004338A - 基板处理装置、排气装置、半导体装置的制造方法和程序 - Google Patents

基板处理装置、排气装置、半导体装置的制造方法和程序 Download PDF

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CN115004338A
CN115004338A CN202180010068.6A CN202180010068A CN115004338A CN 115004338 A CN115004338 A CN 115004338A CN 202180010068 A CN202180010068 A CN 202180010068A CN 115004338 A CN115004338 A CN 115004338A
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gas
containing gas
metal
oxygen
pump
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山崎裕久
寿崎健一
永冨佳将
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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Abstract

本发明提供一种技术，具有处理基板的处理室、向处理室内供给含金属气体的第一气体供给部、从处理室供给第一含氧气体的第二气体供给部和将含有含金属气体成分的排气气体从处理室内排气的排气部，排气部具有气体排气管、对处理室内进行排气的泵、对泵进行辅助的辅助泵以及设置在泵与辅助泵之间的用于通过等离子体来捕集含金属气体成分的捕获部。

Description

基板处理装置、排气装置、半导体装置的制造方法和程序
技术领域
本公开涉及基板处理装置、排气装置、半导体装置的制造方法和程序。
背景技术
在半导体制造装置的成膜工艺中使用各种液体原料。在成膜工艺中，通过CVD、ALD等方式气化后的成膜原料被供给至反应室，经过排气配管由真空泵向除害装置排气。在该过程中，根据成膜原料的材料特性，有可能产生因成膜原料的液化、热分解、成膜反应而产生副生成物等各种障碍。
尤其是，在真空泵中，因副生成物的堆积，有时会使内部的转动机构停止，因而有时会在反应室与真空泵之间设置捕捉成膜原料的捕获机构。但是，为了易于捕捉成膜原料，捕获机构存在采用复杂结构，排气导通性变小的倾向。
现有技术文献
专利文献
专利文献1：日本特开2012-174725号公报
发明内容
发明要解决的课题
如上所述，由于为了捕集液体原料、副生成物等而在反应室和真空泵之间设置捕获机构，因此，如果增大排气导通性，则捕集效率会降低。此外，如果反之为了增大捕集效率而减低排气导通性，则会成为降低泵排气性能这样的相反的关系。因此，存在或者对于液体原料不能得到充分的捕集效率或者排气导通性变小的问题。
本公开的目的在于提供一种在抑制捕集效率降低的同时抑制泵排气性能降低的技术。
用于解决课题的方法
根据本公开的一个方式，提供一种技术，具有处理基板的处理室、向上述处理室内供给含金属气体的第一气体供给部、向上述处理室内供给含氧气体的第二气体供给部和将含有含金属气体成分的排气气体从上述处理室内排气的排气部，上述排气部具有气体排气管、对上述处理室内进行排气的泵、对该泵进行辅助的辅助泵以及设置在上述泵与上述辅助泵之间用于通过等离子体来捕集上述含金属气体成分的捕获部。
发明效果
根据本公开，能够在抑制捕集效率降低的同时抑制泵排气性能降低。
附图说明
图1是用于说明本公开的实施方式中适合使用的基板处理装置的概略纵截面图。
图2是图1的A-A线的垂直截面图。
图3是用于说明本公开的实施方式中适合使用的捕获器的概略纵截面图。
图4是显示本公开的实施方式中适合使用的控制器构成的图。
图5是用于说明使用本公开的优选实施方式的基板处理装置来制造金属氧化膜的工艺的框图。
图6是用于说明使用本公开的优选实施方式的基板处理装置来制造金属氧化膜的工艺的时间图。
具体实施方式
(1)基板处理装置的构成
以下，使用附图对实施方式进行说明。但是，以下的说明中，对于相同构成要素赋予相同符号并省略重复的说明。需说明的是，为了更明确地说明附图，与实际状态相比，对于各部分的宽度、厚度、形状等，有时会示意性表示，仅是一例，不限定本公开的解释。
以下，对于本公开的优选实施方式的基板处理装置，参照附图来进行说明。作为一例，该基板处理装置构成为作为半导体装置(半导体设备)的IC(Integrated Circuit，集成电路)的制造方法中实施作为基板处理工序的成膜工序的半导体制造装置。
如图1所示，基板处理装置所具备的处理炉202具有作为加热单元(加热机构)的加热器207。加热器207为圆筒形状，受到作为保持板的加热器基座(未图示)支撑而垂直安装。在加热器207的内侧，与加热器207同心圆状地配设构成反应容器(处理容器)的反应管203。
在反应管203的下方，设置作为能够将反应管203的下端开口气密地闭塞的炉口盖体的密封帽219。密封帽219从垂直方向的下侧抵接在反应管203的下端。在密封帽219的上表面，设置与反应管203的下端抵接的作为密封构件的O型圈220。在密封帽219的与处理室201的相反侧，设置使后述的晶圆盒217旋转的旋转机构267。
构成为旋转机构267的旋转轴255贯通密封帽而与晶圆盒217连接，通过使晶圆盒217旋转而使作为基板的晶圆200旋转。密封帽219构成为通过在反应管203的外部设置的作为升降机构的晶圆盒升降机115而在垂直方向上升降，由此，能够将晶圆盒217搬入处理室201内和搬出处理室201外。
在密封帽219上，隔着作为隔热构件的石英帽218设立晶圆盒217。石英帽218是由例如石英、碳化硅等耐热性材料构成的作为隔热部来发挥功能并保持晶圆盒的保持体。晶圆盒217例如由石英、碳化硅等耐热性材料构成，构成为能够将多枚晶圆200以水平姿态且相互中心对齐的状态在管轴方向上整列地多段支撑。
在作为处理室201的反应管203的下部，设置喷嘴249a、喷嘴249b来贯通反应管203。喷嘴249a、喷嘴249b分别与气体供给管232a、气体供给管232b连接。由此构成为在反应管203中设置2个喷嘴249a、249b和2根气体供给管232a、232b，能够向处理室201内供给多种气体。此外，如后所述，气体供给管232a、气体供给管232b分别与非活性气体供给管232c、232e等连接。
在气体供给管232a中，从上游方向开始依次设置作为气化装置(气化单元)的将液体原料气化来生成作为原料气体的气化气体的气化器271a、雾过滤器300、气体过滤器272a、作为流量控制器(流量控制部)的质量流量控制器(MFC)241a和作为开关阀的阀门243a。通过打开阀门243a，能够将在气化器271a内生成的气化气体经由喷嘴249a供给至处理室201内。
在气体供给管232a中，在MFC241a与阀门243a之间，连接与后述气体排气管231连接的弯管232d。该弯管232d中设置作为开关阀的阀门243d，在不向处理室201供给后述原料气体时，经由阀门243d将原料气体向弯管232d供给。
构成为通过关闭阀门243a并打开阀门243d，能够继续气化器271a中的气化气体的生成并停止向处理室201内供给气化气体。稳定地生成气化气体需要预定的时间，构成为通过阀门243a和阀门243d的切换动作从而能够在非常短的时间内进行向处理室201内的气化气体的供给和停止的切换。
进一步在气体供给管232a中，在阀门243a的下游侧与非活性气体供给管232c连接。在该非活性气体供给管232c中，从上游方向开始依次设置作为流量控制器(流量控制部)的MFC241c和作为开关阀的阀门243c。在气体供给管232a、非活性气体供给管232c、弯管232d中安装加热器150以防止再液化。
气体供给管232a的前端部与上述喷嘴249a连接。喷嘴249a设置在反应管203的内壁与晶圆200之间的圆弧状的空间内，沿着反应管203的内壁下部至上部，朝着晶圆200的积载方向上方竖立。喷嘴249a构成为L字型的长喷嘴。
在喷嘴249a的侧面设置供给气体的气体供给孔250a。如图2所示，气体供给孔250a向着反应管203的中心开口。该气体供给孔250a从反应管203的下部直至上部设置多个，分别具有相同的开口面积，进而以相同的开口间距设置。
第一处理气体供给系统主要由气体供给管232a、弯管232d、阀门243a、243d、MFC241a、气化器271a、雾过滤器300、气体过滤器272a、喷嘴249a构成。至少由喷嘴249a构成第一气体供给部。此外，第一非活性气体供给系统主要由非活性气体供给管232c、MFC241c、阀门243c构成。
在气体供给管232b中，从上游方向开始依次设置作为产生臭氧(O3)气体的装置的臭氧发生器500、阀门243f、作为流量控制器(流量控制部)的MFC241b和作为开关阀的阀门243b。气体供给管232b的上游侧，例如，与供给氧(O2)气体的未图示的氧气供给源连接。
构成为：向臭氧发生器500供给的O2气体在臭氧发生器500中成为作为含氧气体的O3气体，向处理室201内供给。在气体供给管232b中，在臭氧发生器500与阀门243f之间，连接与后述气体排气管231连接的弯管232g。在该弯管232g中，设置作为开关阀的阀门243g，在不向处理室201供给后述的O3气体时，经由阀门243g将原料气体向弯管232g供给。构成为：通过关闭阀门243f并打开阀门243g，能够继续由臭氧发生器500进行的O3气体的生成并停止向处理室201内供给O3气体。
稳定地精致作为含氧气体的O3气体需要预定的时间，构成为通过阀门243f、阀门243g的切换动作从而能够在非常短的时间内进行向处理室201的O3气体的供给、停止的切换。进而在气体供给管232b中，在阀门243b的下游侧与非活性气体供给管232e连接。在该非活性气体供给管232e中，从上游方向开始依次设置作为流量控制器(流量控制部)的MFC241e和作为开关阀的阀门243e。
气体供给管232b的前端部与上述喷嘴249b连接。喷嘴249b设置在反应管203的内壁与晶圆200之间的圆弧状的空间内，沿着反应管203的内壁下部至上部，朝着晶圆200的积载方向上方竖立。喷嘴249b构成为L字型的长喷嘴。
在喷嘴249b的侧面设置供给气体的气体供给孔250b。如图2所示，气体供给孔250b向着反应管203的中心开口。该气体供给孔250b从反应管203的下部直至上部设置多个，分别具有相同的开口面积，进而以相同的开口间距设置。
第二处理气体供给系统主要由气体供给管232b、弯管232g、臭氧发生器500、阀门243f、243g、243b、MFC241b、喷嘴249b构成。至少由喷嘴249b构成第二气体供给部。此外，第二非活性气体供给系统主要由非活性气体供给管232e、MFC241e、阀门243e构成。
例如，将作为含金属气体的原料气体来作为第一原料气体，从气体供给管232a经由气化器271a、雾过滤器300、气体过滤器272a、MFC241a、阀门243a、喷嘴249a供给至处理室201内。
在气体供给管232b中供给含有氧(O)原子的气体(含氧气体)，利用臭氧发生器500，成为例如O3气体(第一含氧气体)，作为氧化气体(氧化剂)经由阀门243f、MFC241b、阀门243b供给至处理室201内。此外，也能够不利用臭氧发生器500生成O3气体，而将O2气体作为氧化气体(第一含氧气体)供给至处理室201内。
将非活性气体分别从非活性气体供给管232c、232e经由MFC241c、241e、阀门243c、243e、气体供给管232a、232b、喷嘴249a、249b供给至处理室201。
在反应管203中，设置对处理室201的气氛进行排气的排气管231。构成为：排气管231经由作为检测处理室201的压力的压力检测器(压力检测部)的压力传感器245和作为压力调整器(压力调整部)的APC(Auto Pressure Controller，压力自动调节器)阀门244而与真空排气装置246连接，进行真空排气以使得处理室201内的压力达到预定压力(真空度)。
此外，APC阀门244是能够通过阀的开关来进行处理室201的真空排气和停止真空排气，进而能够通过调节阀开度来调整压力的开关阀。排气系统主要由气体排气管231、APC阀门244、真空排气装置246、压力传感器245构成。
真空排气装置246从处理室201侧开始依次连接作为辅助泵的机械增压泵(MBP)9、捕集成膜原料、副生成物的捕获机构10、作为泵的干式泵(DP)11而构成。干式泵11与除外装置12连接。干式泵11由于压缩大气而产生压缩热。因此，存在有机金属原料发生反应而附着生成物的可能性。与此相对，与干式泵11相比，机械增压泵9由于靠近处理室201并在接近真空处工作，因而难以产生压缩热，因此，有机金属原料不发生反应而通过。因此，优选在机械增压泵9与干式泵11之间设置捕获机构10。另外，在捕获机构10与干式泵11之间，也可以设置机械增压泵9。排气部(排气装置)至少由气体排气管231、机械增压泵9、捕获部100、干式泵11构成。
如图3所示，捕获部100由捕集排气气体中所含的含金属气体的捕获机构10、生成等离子体的等离子体生成部16、向等离子体生成部16供给含氧气体的气体供给管(气体供给部)17、向上述等离子体生成部16供给高频电力的高频电源18和向捕获机构10供给在等离子体生成部16被活性化的活性种的气体供给管(气体供给部)21构成。捕获机构10采用氧等离子体方式，在流过成膜原料期间，通过自由基氧化使成膜原料、副生成物附着到捕获翅片14上以进行捕集。这里，捕获翅片14的材质优选为不锈钢，例如，为SUS316。
如果向处理室201内供给含金属气体，并且，如果从作为第三气体供给部的气体供给管17向等离子体生成部16供给作为含氧气体(第二含氧气体)的氧(O2)气体(H2O、O3也可以)并从高频电源18施加高频电力(例如，以0.5KW以上3.5KW以下的范围内的电力施加27.12MHz的高频电力)，则在与高频电源18连接的电极19和与作为基准电位的地线连接并接地的电极20之间产生等离子体，生成被激发(活性化)成等离子体状态的氧气体(通过等离子体化而活性化的活性种)。生成这样的等离子体的方法是容性耦合等离子体(Capacitively Cpupled Plasma，简称：CCP)。
从处理室201内被排气的含有未反应的或贡献于含金属层的形成后的含金属气体(含金属气体成分)的排气气体，从捕获机构10的入口(In)供给至捕获机构10内。如果将在等离子体生成部16被活性化的活性种经由气体供给管21供给至捕获机构10内，则活性种与含金属气体成分反应，生成物会附着在捕获翅片14上，从而将未反应的或贡献于含金属层的形成后的含金属气体成分从排气气体中除去。将未反应的或贡献于含金属层的形成后的含金属气体成分除去后的排气气体从捕获机构10的出口(Out)向干式泵11排出。由此，能够防止在干式泵11内生成物的堆积。
作为生成等离子体的方法，可以使用任何方法，例如，可以使用电感耦合等离子体(Inductively Coupled Plasma：略称：IPC)、电子回旋共振等离子体(Electron CyclotronResonance Plasma，简称：ECR等离子体)、螺旋波等离子体(Helicon Wave ExcitedPlasma，简称：HWP)、表面波等离子体(Surface Wave Plasma，简称：SWP)等。
成膜工序中所使用的第一含氧气体可以与捕获部100中所使用的第二含氧气体是相同气体或是不同气体。在相同气体的情形下，在成膜工序中需要大量的O3，难以确保在捕获部100所使用的量。因此，通过在等离子体中使用作为不同的气体的O2，能够降低O3的消耗。只要能确保成膜工序中所使用的量和捕获中所使用的量，则在作为相同气体使用O3时，由于能够共同使用臭氧发生器，因而能够简化装置构成。
排气气体的温度不需要特别地进行温度控制，但也可以加热排气配管来加热排气气体。通过这样，使有机金属原料与氧等离子体更加易于反应。
构成为在反应管203内设置作为温度检测器的温度传感器263，基于由温度传感器263检测的温度信息来调整对加热器207的通电情况，能够使处理室201内的温度达到所希望的温度分布。温度传感器263与喷嘴249a、249b同样地构成为L字型，沿着反应管203的内壁设置。
如图4所示，作为控制部(控制单元)的控制器121构成为具有CPU(CentralProcessing Unit，中央处理器)121a、RAM(Random Access Memory，随机储存器)121b、存储装置121c和I/O接口121d的计算机。RAM121b、存储装置121c、I/O接口121d构成为能够经由内部总线与CPU121a进行数据交换。控制器121与例如作为触摸面板等而构成的输入输出装置122连接。此外，控制器121能够与存储后述程序的外部存储装置(存储介质)123连接。
存储装置121c例如由闪存、HDD(Hard Disk Drive，硬盘驱动器)等构成。在存储装置121c内储存着控制基板处理装置的动作的控制程序、记载了后述的基板处理的过程、条件等的制程配方等，并能够读出。此外，通过在外部存储装置123中存储控制程序、制程配方等并使该外部存储装置123与控制器121连接，能够将控制程序、制程配方等储存于存储装置121c中。
需说明的是，制程配方是将后述的基板处理工序中的各过程进行组合以使得由控制器121来执行并得到预定结果，作为程序来发挥功能。以下，将这些制程配方、控制程序等简单地总称为程序。
本说明书中在使用“程序”的术语时，包括仅为单独制程配方的情形，包括仅为单独控制程序的情形，也包括其二者的情形。此外，RAM121b构成为将由CPU121a读出的程序、数据等临时保存的存储区域(工作区域)。
I/O接口121d与MFC241a、241b、241c、241e、阀门243a、243b、243c、243d、243e、243f、243g、气化器271a、雾过滤器300、臭氧发生器500、压力传感器245、APC阀门244、机械增压泵9、干式泵11、高频电源18、加热器150、207、温度传感器263、晶圆盒旋转机构267、晶圆盒升降机115等连接。
CPU121a构成为从存储装置121c读出控制程序并执行，并且对应来自输入输出装置122的操作指令的输入等，从存储装置121c读出配方。
CPU121a按照读出的制程配方，进行如下的控制等：由MFC241a、241b、241c、241e进行的各种气体的流量调整动作、阀门243a、243b、243c、243d、243e、243f、243g的开关动作、APC阀门244的开关和基于压力传感器245的压力调整动作、加热器150的温度调整动作、基于温度传感器263的加热器207的温度调整动作、气化器271a、雾过滤器300、臭氧发生器500的控制、机械增压泵9、干式泵11、高频电源18的起动和停止、晶圆盒旋转机构267的旋转速度调节动作、晶圆盒升降机115的升降动作等。
(2)基板处理工序
接下来，作为使用上述的基板处理装置的处理炉的半导体装置(半导体设备)的制造工序的一个工序，参照图5、图6，对于在基板上成膜绝缘膜的流程例进行说明。需说明的是，以下的说明中，构成基板处理装置的各部的动作由控制器121控制。
作为成膜方法，例如有：同时供给含有构成要形成的膜的多种元素的多种气体的方法，或者，交替供给含有构成要形成的膜的多种元素的多种气体的方法。
首先，将多枚晶圆200装填于晶圆盒217(晶圆装载)(参照图5，步骤S101)，然后，支撑多枚晶圆200的晶圆盒217由晶圆盒升降机115抬升搬入到处理室201内(晶圆盒搭载)(参照图5，步骤S102)。在该状态下，密封帽219经由O型圈220使反应管203的下端成为闭塞状态。
由真空排气装置246进行真空排气，使得处理室201达到所希望的压力(真空度)。这时，处理室201内的压力由压力传感器245测定，并基于该测定的压力对APC阀门243进行反馈控制(压力调整)(参照图5，步骤S103)。
由加热器207进行加热，使得处理室201达到所希望的温度。这时，基于温度传感器263检测的温度信息对加热器207的通电情况进行反馈控制，使得处理室201达到所希望的温度分布(温度调整)(参照图5，步骤S103)。接下来，由旋转机构267使晶圆盒217旋转，从而使晶圆200旋转。
接下来，进行绝缘膜形成工序(参照图5，步骤S104)，该工序中，通过向处理室201供给含金属气体和含氧气体来成膜作为绝缘膜的金属氧化膜。在绝缘膜形成工序中依次进行如下的4个步骤。
(绝缘膜形成工序)
＜步骤S105＞
在步骤S105(参照图5、图6)中，首先流入含金属气体。打开气体供给管232a的阀门243a并关闭弯管232d的阀门243d，经由气化器271a、雾过滤器300和气体过滤器272a向气体供给管232a内流入含金属气体。在气体供给管232a内流动的含金属气体由MFC241a调整流量。流量调整后的含金属气体从喷嘴249a的气体供给孔250a向处理室201供给，同时，从气体排气管231排气。这时，同时打开阀门243c，在气体供给管232c内流入非活性气体。在气体供给管232c内流动的非活性气体由MFC241c调整流量。流量调整后的非活性气体与含金属气体一起向处理室201供给，同时，从气体排气管231排气。通过向处理室201供给含金属气体，其与晶圆200反应，在晶圆200上形成含金属含有层。
这时，适当调整APC阀门244，将处理室201的压力调整为例如50～400Pa的范围内的压力。由MFC241a控制的含金属气体的供给流量例如设为0.1～0.5g/分钟的范围内的流量。将晶圆200暴露于含金属气体的时间，即气体供给时间(照射时间)例如设为30～240秒的范围内的时间。这时，加热器207的温度设定为使得晶圆200的温度成为例如150～250℃范围内温度的温度。
＜步骤S106＞
在步骤S106(参照图5、图6)中，在形成含金属层后，关闭阀门243a并打开阀门243d，停止向处理室201供给含金属气体，使含金属气体流向弯管232d。这时，保持气体排气管231的APC阀门244打开的状态，由真空排气装置246对处理室201进行真空排气，将处理室201内残留的未反应的或贡献于含金属层的形成后的含金属气体从处理室201排除。此外，此时，保持阀门243c的打开状态，维持非活性气体向处理室201的供给。由此，提高将处理室201内残留的未反应的或贡献于含金属层的形成后的含金属气体从处理室201排除的效果。此外，将含有从处理室201内被排气的含金属气体(含金属气体成分)的排气气体向捕获机构内10供给。供给至捕获机构10内的含金属气体成分与活性种反应，生成物附着在捕获翅片14上，从而将未反应的或贡献于含金属含有层的形成后的含金属气体成分从排气气体除去。
＜步骤S107＞
在步骤S107(参照图5、图6)中，在将处理室201的残留气体除去后，向气体供给管232b内流入含氧气体。在气体供给管232b内流动的例如O2气体由臭氧发生器500转变为O3气体。打开气体供给管232b的阀门243f和阀门243b并关闭弯管232g的阀门243g，从而，在气体供给管232b内流动的含氧气体(第二含氧气体)由MFC241b调整流量，从喷嘴249b的气体供给孔250b向处理室201供给，同时，从气体排气管231排气。这时，同时打开阀门243e，向非活性气体供给管232e内流入非活性气体。非活性气体气体与含氧气体一起向处理室201供给并同时从气体排气管231排气。通过向处理室201供给含氧气体，从而在晶圆200上形成的含金属层与含氧气体反应，形成金属氧化层。
在含氧气体流动时，通过适当调整APC阀门244，使得处理室201的压力例如为50～400Pa的范围内的压力。由MFC241b控制的O3气体的供给流量例如设为10～20slm的范围内的流量。将晶圆200暴露于含氧气体的时间，即气体供给时间(照射时间)例如设为60～300秒的范围内的时间。此时加热器207的温度，与步骤105同样地，设定为使得晶圆200的温度为150～250℃范围内温度的温度。
＜步骤S108＞
在步骤S108(参照图5、图6)中，关闭气体供给管232b的阀门243b并打开阀门243g，停止向处理室201供给氧气体(第二含氧气体)，使含氧气体流向弯管232g。这时，保持气体排气管231的APC阀门244打开的状态，由真空排气装置246对处理室201进行真空排气，将处理室201内残留的未反应的或贡献于氧化后的含氧气体从处理室201排除。此外，此时，保持阀门243e的打开状态，维持非活性气体向处理室201的供给。由此，提高将处理室201内残留的未反应的或贡献于氧化后的氧气体从处理室201排除的效果。
将上述步骤S105～S108作为1个循环，通过将该循环至少进行1次以上(步骤S109)，能够在晶圆200上形成预定膜厚的金属氧化膜。此外，优选多次重复上述循环。由此，在晶圆200上形成所希望的金属氧化膜。
在形成金属氧化膜后，关闭气体供给管232a的阀门243a，关闭气体供给管232b的阀门243b，打开非活性气体供给管232c的243c，打开非活性气体供给管232e的243e，向处理室201流入非活性气体。非活性气体作为吹扫气体来发挥作用，由此，由非活性气体对处理室201进行吹扫，将处理室201内残留的气体从处理室201除去(吹扫，步骤S110)。然后，将处理室201的气氛置换为非活性气体，将处理室201的压力复原为常压(大气压复原，步骤S111)。
然后，由晶圆盒升降机115使密封帽219降下，打开集管209的下端，然后，将处理后的晶圆200以由晶圆盒217支撑的状态从集管209的下端搬出到反应管203的外部(晶圆盒拆卸，步骤S112)。然后，将处理后的晶圆200从晶圆盒217中取出(晶圆卸载，参照步骤S112)。
此外，本公开能够通过例如改变现有的基板处理装置的制程配方来实现。在改变制程配方时，可以将本公开的制程配方经由通信电路、记录了该制程配方的记录介质安装于现有的基板处理装置，或者操作现有的基板处理装置的输入输出装置，将制程配方自身变更为本公开的制程配方。
例如，上述实施方式中，作为含金属气体，例如，可以使用Zr(O-tBu)4气体、TDMAZ(四(二甲基氨基)锆：Zr(NMe2)4)气体、TEMAZ(四(乙基甲基氨基)锆：Zr[N(CH3)C2H5]4)、TDEAZ(四(二乙基氨基)锆：Zr(NETt2)4)气体、Zr(MMP)4气体等。作为原料气体，例如，也可以使用三甲基铝(Al(CH3)3，简称：TMA)气体等含有金属元素和碳的有机金属原料气体。作为反应气体，可以使用与上述实施方式同样的气体。
此外，作为在成膜工序中使用的含氧气体(第一含氧气体)，可以使用O2气体、H2O气体、O3气体等。
此外，作为在捕获部100使用的含氧气体(第二含氧气体)，可以使用O2气体、H2O气体、O3气体等。
此外，作为非活性气体，可以使用N2气体、Ar气体、He气体、Ne气体、Xe气体等惰性气体。
此外，在上述实施方式中，以在晶圆200上堆积膜为例进行了说明。但本公开不限定于这样的方式。例如，即使是对于在晶圆200上形成的膜等进行氧化处理、扩散处理、退火处理、蚀刻处理等处理时，也能够很好地适用。
此外，不限于本实施方式中的基板处理装置这样的处理半导体晶圆的半导体制造装置等，也可以适用于对玻璃基板进行处理的LCD(Liquid Crystal Display，液晶显示器)制造装置中。
符号说明
9…机械增压泵(辅助泵)，10…捕获机构，11…干式泵(泵)，100…捕获部，200…晶圆(基板)，201…处理室，231…气体排气管。

Claims (18)

1.一种基板处理装置，具有：
处理基板的处理室，
向所述处理室内供给含金属气体的第一气体供给部，
向所述处理室内供给第一含氧气体的第二气体供给部，和
将含有含金属气体成分的排气气体从所述处理室内进行排气的排气部；
所述排气部具有气体排气管、对所述处理室内进行排气的泵、对该泵进行辅助的辅助泵、设置在所述泵与所述辅助泵之间用于通过等离子体来捕集排气气体中所含的所述含金属气体成分的捕获部。
2.如权利要求1所述的基板处理装置，其中，
所述捕获部具有：
捕集所述排气气体中所含的所述含金属气体成分的捕获机构，
生成所述等离子体的等离子体生成部，
向所述等离子体生成部供给第二含氧气体的第二气体供给部，
向所述等离子体生成部供给高频电力的高频电源，和
将来自所述等离子体生成部的气体向所述捕获机构供给的第三气体供给部。
3.如权利要求2所述的基板处理装置，其中，
所述等离子体生成部将所述第二含氧气体等离子体化而活性化，并经由所述第三气体供给部供给至所述捕获机构。
4.如权利要求2或权利要求3所述的基板处理装置，其中，
所述等离子体生成部具有与高频电源连接的电极和与作为基准电位的地线连接并接地的电极。
5.如权利要求3或权利要求4所述的基板处理装置，其中，
在所述捕获机构内，所述含金属气体成分与在所述等离子体生成部被活性化的所述第二含氧气体发生反应。
6.如权利要求5所述的基板处理装置，其中，
所述捕获机构具有使所述含金属气体成分附着的捕获翅片。
7.如权利要求6所述的基板处理装置，其中，
使所述含金属气体成分与在所述等离子体生成部被活性化的第二含氧气体发生反应而生成的生成物附着在所述捕获翅片上。
8.如权利要求6或权利要求7所述的基板处理装置，其中，所述捕获翅片为不锈钢。
9.如权利要求1所述的基板处理装置，其中，
所述泵为干式泵，所述辅助泵为机械增压泵。
10.如权利要求2所述的基板处理装置，其中，
所述第一含氧气体和所述第二含氧气体为相同气体。
11.如权利要求10所述的基板处理装置，其中，
所述第一含氧气体和所述第二含氧气体均为臭氧。
12.如权利要求2所述的基板处理装置，其中，
所述第一含氧气体和所述第二含氧气体是不同的气体。
13.如权利要求12所述的基板处理装置，其中，
所述第一含氧气体是氧，所述第二含氧气体是臭氧。
14.如权利要求11或权利要求13所述的基板处理装置，其中，
具有产生所述臭氧的臭氧发生器。
15.如权利要求2所述的基板处理装置，其中，
交替进行：(a)从所述第一气体供给部向所述处理室内供给含金属气体的处理和(b)从所述第二气体供给部向所述处理室内供给所述第一含氧气体的处理，
并且，进行：(c)在(a)之后对含有所述含金属气体成分的排气气体进行排气的处理和(d)捕集所述排气气体中所含的所述含金属气体成分的处理。
16.一种排气装置，具有：
气体排气管，
对处理室内进行排气的泵，
对该泵进行辅助的辅助泵，和
捕获部，其在所述泵与所述辅助泵之间，用于通过用等离子体活性化的含氧气体来捕集排气气体中所含的含金属气体成分。
17.一种半导体装置的制造方法，包括：
在基板处理装置的处理室内容纳基板的工序，所述基板处理装置具有处理所述基板的所述处理室、向所述处理室内供给含金属气体的第一气体供给部、向所述处理室内供给第一含氧气体的第二气体供给部和将含有含金属气体成分的排气气体从所述处理室内进行排气的排气部，并且，所述排气部具有气体排气管、对所述处理室内进行排气的泵、对该泵进行辅助的辅助泵、在所述泵与所述辅助泵之间用于通过等离子体来捕集所述含金属气体成分的捕获部，
向所述处理室内供给所述含金属气体的工序，
从所述处理室对所述含金属气体成分进行排气的工序，
由所述捕获部捕集所述含金属气体成分的工序。
18.一种程序，通过计算机使基板处理装置执行如下过程：
在所述基板处理装置的处理室内容纳基板的过程，所述基板处理装置具有处理所述基板的所述处理室、向所述处理室内供给含金属气体的第一气体供给部、向所述处理室内供给第一含氧气体的第二气体供给部和将含有含金属气体成分的排气气体从所述处理室内进行排气的排气部，并且，所述排气部具有气体排气管、对所述处理室内进行排气的泵、对该泵进行辅助的辅助泵、在所述泵与所述辅助泵之间用于通过等离子体来捕集所述含金属气体成分的捕获部，
向所述处理室内供给所述含金属气体的过程，
从所述处理室对所述含金属气体成分进行排气的过程，
由所述捕获部捕集所述含金属气体成分的过程。
CN202180010068.6A 2020-03-18 2021-03-15 基板处理装置、排气装置、半导体装置的制造方法和程序 Pending CN115004338A (zh)

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